CN1933098B - Mask for continuous transverse crystallizing technology and method using the same mask - Google Patents
Mask for continuous transverse crystallizing technology and method using the same mask Download PDFInfo
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- CN1933098B CN1933098B CN2005101032405A CN200510103240A CN1933098B CN 1933098 B CN1933098 B CN 1933098B CN 2005101032405 A CN2005101032405 A CN 2005101032405A CN 200510103240 A CN200510103240 A CN 200510103240A CN 1933098 B CN1933098 B CN 1933098B
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- 238000005516 engineering process Methods 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 14
- 239000013078 crystal Substances 0.000 claims description 51
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 14
- 230000004927 fusion Effects 0.000 claims description 9
- 238000002425 crystallisation Methods 0.000 abstract description 10
- 230000008025 crystallization Effects 0.000 abstract description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 9
- 238000010586 diagram Methods 0.000 description 14
- 239000010409 thin film Substances 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 6
- 238000006073 displacement reaction Methods 0.000 description 5
- 235000019994 cava Nutrition 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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Abstract
The invention is concerned with the mask and the mask using method that is used for continuous transverse crystallization technology. The mask includes: at least one transparent grid that includes two long borders, namely the front edge and the rear edge, the borders are parallel and same length, the front edge faces to the outer jut of the transparent grid, the rear edge faces to the inner hollow of the transparent grid. The invention can be used to remove the un-symmetrical area effectively, avoid the problem of craftwork speed drop. By the increase of the craftwork speed, the invention can reduce the overlapping fusing area in order to prevent the polycrystalline silicon layer to absorb more laser energy, and reduces the possibility that the polycrystalline silicon layer breaks as the conglomerate-block effect.
Description
Technical field
The present invention relates to a kind of mask, relate in particular to a kind of method that is used for the mask of continuous transverse crystallizing (SLS:SequentialLateral Solidification) technology and uses this mask.
Background technology
In recent years, the advantage that LCD (LCD:Liquid Crystal Display) is frivolous because of it, power saving, the no width of cloth are penetrated, replaced conventional cathode ray tube (CRT:Cathode Ray Tube) display gradually, be widely used in the electronic products such as desktop PC, personal digital aid (PDA), mobile computer, digital camera and mobile phone.
As shown in Figure 1, be a kind of schematic diagram of typical active-matrix formula display panels.Have a plurality of pixel elements 12 on this display panels 10 and be arranged.Each pixel element 12 all is connected to a thin-film transistor (TFT:Thin Film Transistor) 14, as switch discharging and recharging with control pixel element 12.The source electrode of this thin-film transistor 14 is electrically connected to one source pole drive circuit (not icon) by a holding wire 16, and its grid is electrically connected to scan driving circuit (not icon) by one scan line 18.Therefore, the shows signal of extraneous input can be converted to source drive voltage Vs and turntable driving voltage Vg and import the source electrode of each thin-film transistor 14 and grid respectively with the generation picture.
Generally speaking, be subject to the temperature that glass substrate can bear, directly be made in the thin-film transistor 14 on the display panels 10, adopt the design of amorphous silicon (Amorphous Silicon).Yet the switching speed of amorphous silicon film transistor (a-TFT:Amorphous This Film Transistor), electrical effect and reliability all are not enough to adapt to the required high arithmetic speed of drive circuit.Therefore, drive circuit must use polycrystalline SiTFT as switch element, causes drive circuit to be made on the silicon, and is connected to the demonstration of display panels 10 with control pixel element 12 by winding displacement.
Yet along with display panels 10 sizes increase, traditional switching speed that amorphous silicon film transistor provided is not applied gradually and is used.In order to improve the display effect of display panels, open and, must manage on glass substrate, to make polycrystalline SiTFT in order to make drive circuit be made in the demand that reaches lightening on the display floater.Therefore, must manage on glass substrate, to make high-quality polysilicon layer.
As shown in Figure 2, be the schematic diagram of a typical low temperature polycrystalline silicon technology.As shown in FIG., an amorphous silicon layer 120 is formed at a substrate 100 surfaces, and laser forms a melting layer 122 on the surface of amorphous silicon layer 120.The amorphous silicon material of fusion is not as the required crystal seed of crystallization as yet in these melting layer 122 belows, and upwards growing up forms crystal grain 126.Yet crystal grain 126 sizes that this technology can provide can't effectively improve the electrical of thin-film transistor often not as good as one micron.
In order to improve the size of crystal grain, please refer to Fig. 3, in typical transverse crystallization (LateralSolidification) technology, laser simultaneously, also produces horizontal thermal gradient by the specific region A of mask 200 molten amorphous silicon layers 120 in this melt region A.The amorphous silicon material of fusion is not as crystal seed as yet for this melt region A side, and the central authorities of past melt region A grow up to produce the crystal grain 128 of large-size.
Shown in Fig. 4 A, be used for the schematic diagram of the mask 300 of continuous transverse crystallizing (SLS:Sequential LateralSolidification) technology for the typical case.As shown in FIG., this mask 300 has a plurality of first transparent gratings (slit) 310 and a plurality of arrangements second transparent grating 320 on it.The leading edge and the trailing edge of first transparent grating 310 and second transparent grating 320 adopt the triangular symmetry design of patterns respectively.The light tight district that adjacent two second transparent gratings of each first transparent grating, 310 alignment are 320.And the width of first transparent grating 310 is greater than the spacing of adjacent two second transparent gratings 320.
Fig. 4 B and 4C show the schematic diagram of other mask that is used for continuous transverse crystallizing technology 301,302 designs.Compared to mask 300 designs of Fig. 4 A, the leading edge of the transparent grating on the mask 301,302 and trailing edge adopt the design of rectangle, semicircle symmetrical pattern respectively.
As shown in Figure 5, carry out the schematic diagram of continuous transverse crystallizing technology for the mask that uses Fig. 4 A.At first, in first time lf step (as shown in phantom in FIG.), laser with certain reduce in scale, exposes to amorphous silicon layer, and form melt region on amorphous silicon layer by first transparent grating 310 and second transparent grating 320 on the mask 300.Simultaneously as shown in Figure 6, for being shown enlarged in the formed first crystal region A1 in this lf step.Owing to locating around transparent grating 310 and 320 can be because therefore the interference of light and the inhomogeneous district a that scattering produces the crystallization direction disorder, has only the middle body of the first crystal region A1 can be ideal uniform lateral junction crystalline region b.Therefore, the length L of the lateral junction crystalline region b of Fig. 6 A only can equate with the length L 1 that the long limit of transparent grating is projeced into this amorphous silicon layer at the most.
In second time lf step (solid line part in as Fig. 5), the mask 300 that moves right makes first transparent grating 310 aim at still uncrystallized part between the first crystal region A1.Because the width of first transparent grating is greater than the spacing of adjacent two second transparent gratings, therefore, shown in Fig. 6 B, this time second crystal region A2 that is produced in the laser irradiation step and the long limit of the first crystal region A1 can overlap.Therefore, be positioned at the long limit inhomogeneous district a on every side of the first crystal region A1, can be by this step fusion again to improve its crystallization effect.
As near the inhomogeneous district a the first crystal region A1 leading edge and the trailing edge, must improve by the displacement that reduces mask.Furthermore, shown in Fig. 6 C, the formed first crystal region A1 of lf step is with the distance D of formed the 3rd crystal region A3 of lf step must be less than the length L 1 of lateral junction crystalline region b for the second time for the first time, have with the trailing edge of the leading edge of guaranteeing the first crystal region A1 and the 3rd crystal region A3 overlapping fully, with the inhomogeneous district of effective elimination a.Therefore, this mask displacement can't improve and cause process speed to be restricted.Simultaneously, because the overlapping area of the first crystal region A1 and the 3rd crystal region A3 increases, can make poly-piece effect (agglomeration) cause the chance of polysilicon layer broken hole to improve.
Summary of the invention
The object of the present invention is to provide a kind of mask that is applied to continuous transverse crystallizing, except can effectively eliminating inhomogeneous district a, and the problem that can avoid process speed to descend.
The invention provides a kind of continuous transverse crystallizing technology that is used for, the mask with amorphous silicon layer crystallization formation polycrystal layer comprises:
At least one transparent grating, this transparent grating comprise two long limits, a leading edge and a trailing edge, and described two long limits are parallel to each other and equal in length, and described leading edge is outstanding towards the outside of described transparent grating, and described trailing edge is towards the inner recess of described transparent grating.
Described leading edge be shaped as V-type, circular arc type or ladder type.
Described trailing edge be shaped as V-type, circular arc type or ladder type.
Described leading edge be shaped as V-type, described trailing edge be shaped as V-type, and the drift angle of described V-type leading edge is less than or equal to the drift angle of described V-type trailing edge.
The drift angle of described V-type leading edge is spent to 90 degree between 10.
The drift angle of described V-type trailing edge is spent to 170 degree between 90.
The present invention also provides a kind of mask that is used for transverse crystallizing technology with amorphous layer crystallization formation polycrystal layer, comprising:
At least one transparent grating, this transparent grating comprise two long limits, a leading edge and a trailing edge, and described two long limits are parallel to each other and equal in length, and described leading edge is outstanding towards the outside of described transparent grating, and described trailing edge is in line and is connected to described two long limits.
Described leading edge be shaped as V-type, circular arc type or ladder type.
V-shaped and its drift angle of described leading edge between 10 degree to 90 degree.
The present invention also provides a kind of method of utilizing a mask crystalizing amorphous silicon layer, described mask has at least one transparent grating, this transparent grating has two long limits, one leading edge and a trailing edge, described leading edge is outstanding towards the outside of described transparent grating, described trailing edge is towards the inner recess of described transparent grating, and this method comprises the following steps: at least
One substrate is provided;
Make an amorphous silicon layer on described substrate;
With the described substrate of described mask alignment;
By the described amorphous silicon layer of described mask fusion, correspond to described transparent grating respectively in this amorphous silicon layer, to produce a plurality of first crystal regions;
Laterally move described mask, make the leading edge of described transparent grating or trailing edge and described first crystal region overlapping;
By the described amorphous silicon layer of described mask fusion, to produce a plurality of second crystal regions.
The distance that described mask transverse moves is less than the length on the long limit of described transparent grating.
The distance that described mask transverse moves deducts the distance of described trailing edge depression greater than the length on the long limit of described transparent grating.
Usefulness of the present invention is, can effectively eliminate inhomogeneous district, the problem that can also avoid process speed to descend.Along with the raising of process speed, continuous transverse crystallizing technology of the present invention can reduce the overlapping area of melt region simultaneously, to prevent polysilicon layer hyperabsorption laser energy, to reduce polysilicon layer causes broken hole because of poly-piece effect possibility.
Description of drawings
Fig. 1 is the schematic diagram of an active-matrix formula display panels;
Fig. 2 is the schematic diagram of a low temperature polycrystalline silicon technology;
Fig. 3 is the schematic diagram of a transverse crystallizing technology;
Fig. 4 A, Fig. 4 B and Fig. 4 C are the schematic diagram that is used for the mask of continuous transverse crystallizing technology;
Fig. 5 carries out the schematic diagram of continuous transverse crystallizing technology for the mask that uses Fig. 4 A;
Fig. 6 A is shown enlarged in formed first crystal region in the continuous transverse crystallizing technology of Fig. 5;
Fig. 6 B is shown enlarged in formed second crystal region and first crystal region in the continuous transverse crystallizing technology of Fig. 5;
Fig. 6 C is shown enlarged in formed first crystal region and the 3rd crystal region in the continuous transverse crystallizing technology of Fig. 5;
Fig. 7 A to Fig. 7 I is depicted as the schematic diagram of transparent grating first to the 9th embodiment of mask of the present invention;
The schematic diagram that mask moved when Fig. 8 A carried out continuous transverse crystallizing technology for the mask that uses Fig. 7 A;
Fig. 8 B and Fig. 8 C figure are respectively formed first crystal region and second crystal region in the continuous transverse crystallizing technology that is presented at Fig. 8 A.
The figure number explanation:
Display panels 10 pixel elements 12
Thin-film transistor 14 holding wires 16
Scan line 18 amorphous silicon layers 120
Crystal grain 126,128 masks 200,300,301,302
First transparent grating, 310 second transparent gratings 320
The even lateral junction of inhomogeneous district a crystalline region b
Embodiment
Shown in Fig. 7 A, be the schematic diagram of transparent grating the 1st embodiment that mask of the present invention had.As shown in FIG., this transparent grating has two corresponding long limits, a leading edge and a trailing edge.Wherein, two corresponding long limits are parallel to each other and equal in length (length is X1).Leading edge presents V-type, and its tip is positioned on the center line of transparent grating, and towards the outstanding preset distance F1 in the outside (i.e. right side among the figure) of transparent grating.Trailing edge presents V-type, and its tip is positioned on the center line of transparent grating, and towards the inside (i.e. right side among the figure) of transparent grating depression one preset distance R1.
Though in the present embodiment, the V-type leading edge has identical external form with the V-type trailing edge, and outstanding also identical with the distance R 1 that the V-type trailing edge caves in apart from F1 of this V-type leading edge.Yet the present invention is not limited to this.Shown in Fig. 7 B, in second embodiment of transparent grating of the present invention, the V-type leading edge outstanding apart from the distance R 2 of F2 greater than V-type trailing edge depression.In other words, the drift angle c of the V-type leading edge of this transparent grating is less than the drift angle d of V-type trailing edge.With regard to a preferred embodiment, the drift angle c of V-type leading edge preferably between 10 the degree to 90 the degree, and the drift angle d of V-type trailing edge preferably between 90 the degree to 170 the degree.
Shown in Fig. 7 A to Fig. 7 F, show transparent grating first to the 6th embodiment of the present invention.As shown in FIG., the leading edge of this transparent grating can be V-type (as Fig. 7 A with shown in Fig. 7 B), circular arc type (shown in Fig. 7 C and Fig. 7 D) or ladder type different external forms such as (shown in Fig. 7 E and Fig. 7 F); And trailing edge also can be V-type (as Fig. 7 A with shown in Fig. 7 B), circular arc type (shown in Fig. 7 C and Fig. 7 D) or ladder type different external forms such as (shown in Fig. 7 E and Fig. 7 F).
In addition, the transparent grating of above-mentioned each embodiment, its leading edge all adopts identical shape type with trailing edge.That is to say that if the leading edge of transparent grating is a V-type, its trailing edge also adopts V-type (shown in Fig. 7 A and Fig. 7 B); If the leading edge of transparent grating is a circular arc type, its trailing edge also adopts circular arc type (shown in Fig. 7 C and Fig. 7 D), and if the leading edge of transparent grating is a ladder type, its trailing edge also adopts ladder type (shown in Fig. 7 E and Fig. 7 F).
Secondly, the distance of the outstanding distance of the leading edge of transparent grating of the present invention and trailing edge depression can identical (shown in Fig. 7 A, Fig. 7 C and Fig. 7 E), also can different (shown in Fig. 7 B, Fig. 7 D and Fig. 7 F).The distance that the distance that leading edge is outstanding preferably caves in greater than trailing edge.In addition, please refer to Fig. 7 G to Fig. 7 I, in transparent grating the 7th to nine embodiment of the present invention, the leading edge of transparent grating is respectively V-type, circular arc type or ladder type, yet the sunken distance of emargination is reduced to zero thereafter, and just trailing edge adopts the shape of straight line.
Shown in Fig. 8 A, carry out the schematic diagram of continuous transverse crystallizing technology for using mask of the present invention.Be that transparent grating with Fig. 7 A is that example describes among the figure.In this continuous transverse crystallizing technology, at first, provide a substrate, and make an amorphous silicon layer and on this substrate, (ask simultaneously) with reference to Fig. 2.Subsequently, shown in dotted line among Fig. 8 A, in first time lf step, with the mask alignment substrate.Laser sees through the transparent grating on the mask, is projeced into amorphous silicon layer with certain scaling, and produces a plurality of first crystal region B1 (please refer to Fig. 8 B) in amorphous silicon layer.Subsequently, shown in solid line among Fig. 8 A, horizontal mobile mask is to carry out the follow-up lf step second time.Laser sees through mask molten amorphous silicon layer, to produce a plurality of second crystal region B2 (please refer to Fig. 8 C figure).
It should be noted that, shown in Fig. 8 C, the formed second crystal region B2 of the lf step second time, its leading edge must have overlapping fully with the first crystal region B1 trailing edge, to guarantee to result from the inhomogeneous district of the first crystal region B1 trailing edge crystallization direction disorder, can obtain repairing through this fusion step.This shows that in order to ensure good crystallization effect, the space D 1 of the first crystal region B1 and the second crystal region B2 must be less than the length S1 on the long limit of the first crystal region B1.Therefore, this spacing D1 must be multiplied by the reduce in scale that this transparent grating is projected to amorphous silicon layer less than the length X 1 (shown in Fig. 8 A) on the long limit of transparent grating.In addition, though in above-mentioned continuous transverse crystallizing technology, shown in Fig. 8 A, mask is right-hand moving in figure, to carry out follow-up lf step; Yet the present invention is not limited to this.As previously mentioned, as long as guarantee the long edge lengths S1 of the distance D 1 of adjacent secondary laser fusion step less than crystal region, as for the moving direction of mask, not restriction.
In traditional continuous transverse crystallizing technology of Fig. 6 C, the distance of the first crystal region A1 and the 3rd crystal region A3 must be less than the length L 1 of lateral junction crystalline region b, to obtain good crystallization effect.Shown in Fig. 8 B, continuous transverse crystallizing technology of the present invention, the formed first crystal region B1 and the second crystal region B2 in double lf step, the size of its spacing D1 does not then have this restriction.
Furthermore, suppose that transparent grating of the present invention and Fig. 4 A conventional transparent grating have equal length, the transparent grating of the present invention distance that conventional transparent grating leading edge is outstanding therewith is identical, and the distance of transparent grating trailing edge depression of the present invention is equal to the outstanding distance of triangular form trailing edge of this conventional transparent grating.Please refer to Fig. 6 A and Fig. 8 A, see through the side edge length L of the formed first crystal region A1 of conventional transparent grating, the long edge lengths S1 that equals to see through the formed first crystal region B1 of transparent grating of the present invention deduct that trailing edge caves in apart from r.Shown in Fig. 8 A, continuous transverse crystallizing technology of the present invention is obviously allowed the spacing distance D1 of the first crystal region B1 and the second crystal region B2, be increased to long edge lengths S1 greater than the first crystal region B1 deduct the trailing edge depression apart from r.Therefore, the continuous quadratic lf step of continuous transverse crystallizing technology of the present invention, the displacement that the mask displacement of being allowed is allowed greater than traditional continuous transverse crystallizing technology.Therefore, compared to the continuous transverse crystallizing technology that adopts traditional mask design, continuous transverse crystallizing technology of the present invention can reach higher process speed.Along with the raising of process speed, continuous transverse crystallizing technology of the present invention can reduce the overlapping area of melt region simultaneously, to prevent polysilicon layer hyperabsorption laser energy, to reduce polysilicon layer causes broken hole because of poly-piece effect possibility.
Above specific embodiment only is used to illustrate the present invention, but not is used to limit the present invention.
Claims (10)
1. a mask that is used for continuous transverse crystallizing technology is characterized in that, comprising:
At least one transparent grating, this transparent grating comprise two long limits, a leading edge and a trailing edge, and described two long limits are parallel to each other and equal in length, and described leading edge is outstanding towards the outside of described transparent grating, and described trailing edge is towards the inner recess of described transparent grating.
2. the mask that is used for continuous transverse crystallizing technology as claimed in claim 1 is characterized in that, described leading edge be shaped as V-type, circular arc type or ladder type.
3. the mask that is used for continuous transverse crystallizing technology as claimed in claim 1 is characterized in that, described trailing edge be shaped as V-type, circular arc type or ladder type.
4. the mask that is used for continuous transverse crystallizing technology as claimed in claim 1 is characterized in that, described leading edge be shaped as V-type, described trailing edge be shaped as V-type, and the drift angle of described V-type leading edge is less than or equal to the drift angle of described V-type trailing edge.
5. the mask that is used for continuous transverse crystallizing technology as claimed in claim 4 is characterized in that, the drift angle of described V-type leading edge is spent to 90 degree between 10.
6. the mask that is used for continuous transverse crystallizing technology as claimed in claim 4 is characterized in that, the drift angle of described V-type trailing edge is spent to 170 degree between 90.
7. a mask that is used for continuous transverse crystallizing technology is characterized in that, comprising:
At least one transparent grating, this transparent grating comprise two long limits, a leading edge and a trailing edge, and described two long limits are parallel to each other and equal in length, and described leading edge is outstanding towards the outside of described transparent grating, and described trailing edge is in line and is connected to described two long limits.
8. the mask that is used for continuous transverse crystallizing technology as claimed in claim 7 is characterized in that, described leading edge be shaped as V-type, circular arc type or ladder type.
9. the mask that is used for continuous transverse crystallizing technology as claimed in claim 8 is characterized in that, V-shaped and its drift angle of described leading edge between 10 degree to 90 degree.
10. method of utilizing a mask crystalizing amorphous silicon layer, it is characterized in that, described mask has at least one transparent grating, this transparent grating has two long limits, one leading edge and a trailing edge, described leading edge is outstanding towards the outside of described transparent grating, and described trailing edge is towards the inner recess of described transparent grating, and this method comprises the following steps: at least
One substrate is provided;
Make an amorphous silicon layer on described substrate;
With the described substrate of described mask alignment;
By the described amorphous silicon layer of described mask fusion, correspond to described transparent grating respectively in this amorphous silicon layer, to produce a plurality of first crystal regions;
Laterally move described mask, make the leading edge of described transparent grating or trailing edge and described first crystal region overlapping, the distance that wherein said mask transverse moves is less than the length on the long limit of described transparent grating and deduct the distance of described trailing edge depression greater than the length on the long limit of described transparent grating;
By the described amorphous silicon layer of described mask fusion, to produce a plurality of second crystal regions.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2005101032405A CN1933098B (en) | 2005-09-16 | 2005-09-16 | Mask for continuous transverse crystallizing technology and method using the same mask |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2005101032405A CN1933098B (en) | 2005-09-16 | 2005-09-16 | Mask for continuous transverse crystallizing technology and method using the same mask |
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| CN1933098A CN1933098A (en) | 2007-03-21 |
| CN1933098B true CN1933098B (en) | 2011-07-27 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020104750A1 (en) * | 2001-02-08 | 2002-08-08 | Hiroshi Ito | Laser processing method and apparatus |
| KR20040051980A (en) * | 2002-12-13 | 2004-06-19 | 삼성전자주식회사 | Crystallization method of silicon |
| US20050142897A1 (en) * | 2003-12-29 | 2005-06-30 | Kim Eok S. | Method for forming polycrystalline silicon film |
| US20050142450A1 (en) * | 2003-12-26 | 2005-06-30 | Lg.Philips Lcd Co., Ltd. | Laser beam pattern mask and crystallization method using the same |
| US20050151146A1 (en) * | 2003-11-19 | 2005-07-14 | Samsung Electronics Co., Ltd. | Crystallization mask, crystallization method, and method of manufacturing thin film transistor including crystallized semiconductor |
-
2005
- 2005-09-16 CN CN2005101032405A patent/CN1933098B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020104750A1 (en) * | 2001-02-08 | 2002-08-08 | Hiroshi Ito | Laser processing method and apparatus |
| KR20040051980A (en) * | 2002-12-13 | 2004-06-19 | 삼성전자주식회사 | Crystallization method of silicon |
| US20050151146A1 (en) * | 2003-11-19 | 2005-07-14 | Samsung Electronics Co., Ltd. | Crystallization mask, crystallization method, and method of manufacturing thin film transistor including crystallized semiconductor |
| US20050142450A1 (en) * | 2003-12-26 | 2005-06-30 | Lg.Philips Lcd Co., Ltd. | Laser beam pattern mask and crystallization method using the same |
| US20050142897A1 (en) * | 2003-12-29 | 2005-06-30 | Kim Eok S. | Method for forming polycrystalline silicon film |
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