CN1923342A - Scrubber for processing semiconductor waste gas - Google Patents

Scrubber for processing semiconductor waste gas Download PDF

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Publication number
CN1923342A
CN1923342A CNA2006101035893A CN200610103589A CN1923342A CN 1923342 A CN1923342 A CN 1923342A CN A2006101035893 A CNA2006101035893 A CN A2006101035893A CN 200610103589 A CN200610103589 A CN 200610103589A CN 1923342 A CN1923342 A CN 1923342A
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CN
China
Prior art keywords
scrubber
tower
chamber
combustion chamber
gas
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Granted
Application number
CNA2006101035893A
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Chinese (zh)
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CN1923342B (en
Inventor
李瑢灿
金滢克
李相根
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Clean Systems Korea Inc
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Clean Systems Korea Inc
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Priority claimed from KR1020050082274A external-priority patent/KR100623369B1/en
Priority claimed from KR1020060011012A external-priority patent/KR100683805B1/en
Priority claimed from KR1020060011013A external-priority patent/KR100669501B1/en
Priority claimed from KR1020060011011A external-priority patent/KR100750406B1/en
Application filed by Clean Systems Korea Inc filed Critical Clean Systems Korea Inc
Publication of CN1923342A publication Critical patent/CN1923342A/en
Application granted granted Critical
Publication of CN1923342B publication Critical patent/CN1923342B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D47/00—Separating dispersed particles from gases, air or vapours by liquid as separating agent
    • B01D47/02—Separating dispersed particles from gases, air or vapours by liquid as separating agent by passing the gas or air or vapour over or through a liquid bath
    • B01D47/028—Separating dispersed particles from gases, air or vapours by liquid as separating agent by passing the gas or air or vapour over or through a liquid bath by directing the gas through a wetted wire mesh or a perforated plate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D51/00—Auxiliary pretreatment of gases or vapours to be cleaned
    • B01D51/02—Amassing the particles, e.g. by flocculation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Incineration Of Waste (AREA)
  • Treating Waste Gases (AREA)
  • Chimneys And Flues (AREA)

Abstract

Disclosed is a scrubber for processing semiconductor waste gas produced in a semiconductor fabricating process, wherein the scrubber burns the waste gas with a flame of a high temperature, filters and captures particles produced after the waste gas is burnt, and discharges particle-filtered waste gas to the atmosphere. The semiconductor waste gas processing scrubber includes: a supply section for supplying semiconductor waste gas, fuel and oxygen; a burner connected to the supply section so as to burn the semiconductor waste gas by flame; a burning chamber joined to the burner so as to cause particles, which are produced as the semiconductor waste gas is burnt, to drop; a wet tower installed at a side of the burning chamber so as to cause the particles, which are transferred from the burning chamber after adsorbing the particles using water, to drop; and a water reservoir tank connected to the burning chamber and the wet tower so as to capture the particles which have dropped from the burning chamber and the wet tower.

Description

Gas purifier for treating semiconductor waste gas
CROSS-REFERENCE TO RELATED APPLICATIONS
This application claims priority to korean patent application 2005-.
Technical Field
The present invention relates to a scrubber (hereinafter, referred to as a "semiconductor exhaust gas treatment scrubber") for treating exhaust gas derived from a semiconductor process, and more particularly, to a semiconductor exhaust gas treatment scrubber which burns exhaust gas from a semiconductor process using a high-temperature flame, filters and collects the burned exhaust gas using water, and then discharges the filtered and collected gas to the atmosphere.
Background
Generally, various reaction gases used to form a thin film on a wafer or etch a wafer in a semiconductor manufacturing process contain an oxide component, a phosphide component, a toxic component, and the like. Therefore, if such a reaction gas (hereinafter, referred to as "exhaust gas") is discharged to the atmosphere after use, it is not only harmful to human bodies, but also causes environmental pollution. Thus, a scrubber is provided in the semiconductor device to discharge the exhaust gas after removing oxide components, phosphide components, toxic components, and the like.
Semiconductor exhaust gas treatment scrubbers for removing exhaust gases in semiconductor manufacturing processes fall into three categories: 1) indirect combustion wet scrubbers that burn the exhaust gas and then filter the exhaust gas again with water, wherein the scrubber is also referred to as a "hot wet scrubber"; 2) a wet scrubber that collects exhaust gas with water and then purifies the water, wherein the scrubber is also referred to as a "wet scrubber"; and 3) direct combustion wet scrubbers that use high temperature flames to burn the flue gas and then use water to collect the gas, wherein the scrubber is also referred to as a "combustion wet scrubber".
Here, the semiconductor waste gas is mainly a silicon-containing gas, which generates a large amount of particles when treated by a hot wet scrubber or a combustion wet scrubber. An example of a chemical reaction formula may be represented as:
similarly, if such semiconductor exhaust gas is burned, a large amount of particles are generated. Therefore, if the particulates are filtered and collected with water, the concentration of harmful components present in the semiconductor exhaust gas can be significantly reduced.
However, the conventional semiconductor exhaust gas treatment scrubber as described above has various problems as described below.
First, one problem with conventional scrubbers is that: the burner used in such a scrubber is inefficient in burning the semiconductor exhaust gas and therefore cannot completely burn the semiconductor exhaust gas. That is, there is a problem that: the burner is supplied with fuel and oxygen and semiconductor exhaust gas, wherein the burner is inefficient in burning the semiconductor exhaust gas because the exhaust gas, the fuel and the oxygen are not rapidly mixed with each other since they are supplied in a manner of flowing in parallel with each other.
Second, particles generated after the combustion of the semiconductor exhaust gas are gradually thickly deposited on the inner wall of the combustion chamber due to the suction force and the frictional force, and are solidified as time passes. Therefore, there is inconvenience that: after a predetermined period of time has elapsed, the entire inner wall of the combustion chamber must be manually cleaned. Typically, the inner walls of such combustion chambers often need to be cleaned every three to four days.
Third, in order to clean the combustion chamber as described above, it is necessary to completely separate the combustion chamber from the casing of the scrubber. However, in the conventional semiconductor exhaust gas treatment scrubber, since the combustion chamber is fixed by a plurality of bolts and nuts, the separation and connection of such combustion chamber takes a very long time.
Fourth, a wet scrubber or a combustion wet scrubber as described above may include a wet tower for injecting a predetermined amount of water. In addition to water sprays, such wet towers are typically provided with a plurality of filters to filter and remove particulates. However, such scrubbers are not efficient because of: such wet towers are intended to be used continuously without changing their assembly conditions, even if their assembly does not take into account the various processing conditions and installation situations. Further, with such a conventional wet tower, when cleaning the inside of the wet tower, sometimes it may be sufficient to clean a specific area. However, in this case, the entire wet tower also needs to be disassembled, so that it takes a considerable time to clean a specific area.
Fifth, a wet scrubber or a combustion wet scrubber as described above may include a water storage tank containing a predetermined amount of water therein. Such a water storage tank is used to collect particles formed when semiconductor exhaust gas is burned by the flame of a burner into water. Of course, such particles and water may be discharged to the outside at predetermined time intervals, and fresh water may be supplied into the water storage tank. However, as time passes, the particles collected in the water of the water storage tank as described above are precipitated and accumulated on the bottom of the water storage tank due to the gravity. Since they are accumulated thicker by gravity as time passes, and thus, the particles adhere to the bottom of the water storage tank by their own weight, even if the water is discharged, the particles are not discharged to the outside. Accordingly, there is a problem in the prior art that: the water storage tank must be disassembled and cleaned at predetermined time intervals, which is very laborious and time-consuming.
Disclosure of Invention
Accordingly, the present invention has been made keeping in mind the above problems occurring in the prior art, and an object of the present invention is to provide a semiconductor exhaust gas treatment scrubber having a burner with improved efficiency of burning semiconductor exhaust gas.
It is another object of the present invention to provide a semiconductor exhaust gas treatment scrubber having a combustion chamber, the inner wall of which is supplied with a pulse wave by a pressure of a predetermined magnitude so that particles are not deposited on the inner wall of the combustion chamber.
It is still another object of the present invention to provide a semiconductor exhaust gas treatment scrubber in which a combustion chamber is adapted to be easily separated, and a chamber support portion is provided below the combustion chamber so that the combustion chamber can be easily attached and detached, whereby the combustion chamber can be easily maintained and repaired.
It is still another object of the present invention to provide a semiconductor exhaust gas treatment scrubber having a wet tower in which a connection state between upper and lower portions of the wet tower can be freely changed according to a semiconductor manufacturing process and an exhaust condition.
It is still another object of the present invention to provide a semiconductor exhaust gas treatment scrubber having a water storage tank for collecting particles from semiconductor exhaust gas, wherein bubbles are periodically generated in the water so that the particles collected in the water do not adhere to the bottom of the water storage tank.
In order to achieve the above object, the present invention provides a scrubber for treating semiconductor waste gas, comprising: a supplysection for supplying semiconductor off-gas, fuel and oxygen; a burner connected to the supply portion to burn the semiconductor waste gas by a flame; a combustion chamber coupled to the burner such that particles generated when the semiconductor exhaust gas is combusted fall; a wet tower installed at a side of the combustion chamber to drop the fine particles transferred from the combustion chamber after being adsorbed with water; and a water storage tank connected to the combustion chamber and the wet tower to collect particles falling from the combustion chamber and the wet tower.
The present invention may further include a chamber supporting portion disposed below the lower end of the combustion chamber to support the combustion chamber.
The supply portion may include: at least one exhaust gas supply pipe connected to the burner to supply the semiconductor exhaust gas to the burner; at least one bypass exhaust gas supply pipe connected to the exhaust gas supply pipe to bypass the semiconductor exhaust gas; at least one fuel supply pipe connected to the burner to supply fuel to the burner; and at least one oxygen supply pipe connected to the burner to supply oxygen to the burner.
The burner may include: a body having at least one semiconductor off-gas supply channel, at least one fuel supply channel, and at least one oxygen supply channel; a fuel nozzle body fitted on a periphery of the main body so as to form a fuel supply space and a fuel supply nozzle; an oxygen nozzle body fitted on the peripheries of the main body and the fuel nozzle body, thereby forming an oxygen supply space and an oxygen supply nozzle; and an assembly body assembled on the peripheries of the main body and the oxygen nozzle body to form a coolant flow space, the assembly body being connected to the combustion chamber.
The body may include: an extension part extending substantially horizontally and radially outward from a lower end of the main body by a predetermined length and having at least one groove formed on a circumferential surface; a first flange located above the extension portion, the first flange extending horizontally and radially outward from the body for a length greater than the extension length of the extension portion; and a second flange located above the first flange, the second flange extending horizontally and radially outward from the body for a length greater than the extended length of the first flange; and wherein at least one semiconductor exhaust gas supply passage extends generally vertically through the body, the at least one fuel supply passage extends vertically through the body such that an outlet of the fuel supply passage is formed between the extension and the first flange, and the at least one oxygen supply passage extends vertically through the body such that an outlet of the oxygen supply passage is formed between the first flange and the second flange.
The groove formed on the body may be inclined in the following manner: a virtual extension of a lower end thereof intersects a central axis of the main body, and wherein the main body is in close contact with the fuel nozzle body, whereby the groove forms a fuel nozzle, and the fuel nozzle body is in close contact with the extension and the first flange, whereby a fuel space is formed between the main body and the fuel nozzle body.
The fuel nozzle body may include: a central hole formed through a central portion of the fuel nozzle body, the body being fitted into the hole; and an extension portion formed around a lower end of a circumferential surface of the fuel nozzle body and extending a predetermined length in a radial direction, wherein at least one groove is formed on a circumferential surface of the extension portion.
The at least one groove formed on the extended portion of the fuel nozzle body may be inclined at an angle greater than an inclination angle of the groove formed on the extended portion of the body, the fuel nozzle body being in close contact with the oxygen nozzle body, whereby the at least one groove on the extended portion of the fuel nozzle body forms the at least one oxygen nozzle and the oxygen nozzle body is in close contact with the second flange of the body and the at least one groove of the fuel nozzle body, whereby one or more oxygen spaces are formed between the first flange and the second flange and between the fuel nozzle body and the oxygen nozzle body.
The oxygen nozzle body may include: a central hole formed through a central portion of the oxygen nozzle body, the fuel nozzle body being fitted into the hole; and an extension portion formed around a lower end of a circumferential surface of the oxygen nozzle body and extending outward in a radial direction by a predetermined length.
The assembly may include a central hole formed through a central portion of the assembly, the oxygen nozzle body being fitted into the hole and forming a coolant flow space between an outer circumferential surface of the oxygen nozzle body and an inner circumferential surface of the assembly, a coolant pipe being connected to the coolant flow space.
The body may have: an inverted conical surface, the apex of which forms the lower end of the body; and a blocking wall extending downward a predetermined length around the tapered surface.
The combustion chamber may include: a top cover, into the central part of which the burner is fitted; an inner chamber depending from the underside of the top cover about the burner; and an outer chamber depending from the underside of the top cover about the inner chamber.
A cooling pipe may be provided in a space between the top cover and the outer chamber to supply a coolant, and at least one through-hole is formed in the cooling pipe such that the coolant is injected into the space between the inner chamber and the outer chamber.
The inner chamber may include upper and lower inner chambers that are detachable from each other, and the outer chamber also includes upper and lower outer chambers that are detachable from each other.
The combustion chamber may include: a pilot through the outer and inner chambers at a lower end of the burner for initial ignition; and an ultraviolet sensor through the outer and inner chambers at a lower end of the burner to detect whether initial ignition is successfully achieved.
The combustion chamber may further include a particle removing gas supply part that supplies gas having a predetermined pressure so that particles do not accumulate on an inner wall of the combustion chamber.
The particle-removing gas supply part may include: a gas supply pipe coupled to an outside of the combustion chamber dome; a gas pipe connected to the gas supply pipe, the gas pipe being formed in a ring shape along a space between the top cover and the inner chamber; and at least one gas nozzle coupled to the gas pipe and extending a predetermined length in the inner chamber.
The gas nozzle may include a straight portion extending parallel to an inner wall of the combustion chamber and a curved portion curved from an end of the straight portion toward the inner wall of the combustion chamber, so that gas may supply an impulse to the inner wall of the combustion chamber.
Four gas nozzles may be provided, which are arranged centering on the center of the inner chamber and spaced apart from each other at angular intervals of 90 degrees.
The gas nozzle may be inclined with respect to the vertical direction of the innerchamber so that gas may be supplied in a swirling manner in the inner chamber.
The gas supplied through the particle-removing gas supply portion may be an inert gas.
The gas supplied through the particle-removing gas supply portion may be supplied in a pulse form.
A substantially funnel-shaped lower chamber is detachably attached to a lower portion of the outer chamber of the combustion chamber, and a particle guide member is incorporated in the interior of the lower chamber, the guide chamber facing a lower end of the lower chamber substantially funnel-shaped, thereby guiding particles generated after combustion of the exhaust gas to the wet tower and the water tank.
The particle guide member may further include an inert gas pipe for injecting an inert gas, thereby preventing the vapor generated in the water storage tank from being introduced into the combustion chamber.
The lower chamber may be provided with a chamber support portion for supporting the combustion chamber and allowing the combustion chamber to be separated.
The chamber supporting part may include: a pair of guide rails linearly installed on the support plate; a pair of guide blocks mounted on the guide rail to reciprocate in a horizontal direction; a pair of support tables mounted on the guide blocks and extending upward a predetermined distance, each of the support tables having a horizontal surface formed on a top of the support table and a descending surface extending downward from the horizontal surface at a predetermined angle; and one or more support rods interconnecting the support tables, the lower chamber being provided with rolling bodies mounted to be slidable along a horizontal or descending surface of the support tables.
The wet tower may include: a cylindrical base tower having a base nozzle; a cylindrical first tower removably mounted on top of the foundation tower, within which first filter and first nozzle are disposed; a cylindrical second tower removably mounted on top of the first tower, within which second tower a second filter and a second nozzle are disposed; a cylindrical third tower removably mounted on top of the second tower, within which third filter and third nozzle are disposed; and a cylindrical fourth column removably mounted on top of the third column, in which a gas supply pipe and a plurality of impingement plates are provided, wherein the first and second columns may be assembled in a different order, and the third and fourth columns may also be assembled in a different order.
The heights and diameters of the first and second towers may be the same as each other, and the heights and diameters of the third and fourth towers are the same as each other, and the diameters of the first and second towers are different from the diameters of the third and fourth towers.
The porosity of the first filter, the second filter and the third filter is gradually reduced in the order of the first filter, the second filter to the third filter.
Fresh water may be supplied through the base nozzle, and water purified by the water storage tank is supplied through the first, second, and third nozzles.
A top-opened cover may be fitted on the top of the fourth tower, and a first discharge duct having a pressure detection port, a temperature detection port, and a cooling air supply port is connected to the cover, and a second discharge duct having a discharge amount control member is connected to the top end of the first discharge duct, so that the discharge amount can be controlled.
The base tower may be connected to the combustion chamber and the water storage tank by an intermediate connection pipe and a lower connection pipe, and a base nozzle is provided to spray water upward toward a first filter installed in the first tower.
The foundation tower may further include a pressure sensing port for sensing pressure in the foundation tower.
The first nozzle of the first tower may be disposed above the first filter in such a manner that water may be sprayed downward toward the first filter.
The first tower may further include a transparent first window formed in a wall of the first tower so that a first filter located within the first tower may be visually seen.
The second nozzle of the second tower may be disposed above the second filter in such a manner that water may be sprayed downward toward the second filter.
The second tower may further comprise a transparent second window formed in a wall of the second tower such that a second filter located within the second tower may be visually seen.
The third nozzle of the third tower may be disposed above the third filter in such a manner that water may be sprayed downward toward the third filter.
The impingement plates of the fourth column may be formed to have a plurality of through-holes each, and the impingement plates may be stacked to be spaced apart from each other in the vertical direction, the through-holes formed in two adjacent impingement plates may be staggered from each other, and the gas supply pipe may be disposed above the impingement plates in such a manner that the inert gas may be supplied downwardly toward the impingement plates.
The water storage tank may include: a first region assembled below the combustion chamber and the wet tower to collect water and particles dropped from the combustion chamber and the wet tower; a second region separated from the first region by a partition and supplying water filtered of particulates from the first region; and a filtering portion disposed between the first region and the second region to filter particles from the water.
A discharge pump may in turn be connected to the first zone for discharging water and particles together to the outside.
The discharge pump may have: a fluid inlet and a fluid outlet for sucking and discharging water and particles; an air inlet and an air outlet for supplying air pressure to the discharge pump to operate the discharge pump; and at least one bubble generator connected to the air outlet through a pipe and immersed in the water in the first region of the water storage tank to a predetermined depth.
The discharge pump may be a pneumatic diaphragm pump.
The bubble generator may be a noise reducer for reducing noise of the discharge pump.
The bubble generator may generate bubbles in the water of the water storage tank every time air is discharged from the discharge pump, so that the particles collected in the water continuously float in the water without being deposited or accumulated on the bottom of the water storage tank.
An inlet of the circulation pump may be connected to the second region of the water storage tank, and an outlet of the circulation pump may be connected to the wet tower through a heat exchanger.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent from the following detailed description when taken in conjunction with the accompanying drawings, in which:
fig. 1 is a perspective view showing the main configuration of a semiconductor exhaust gas treatmentscrubber of the present invention;
FIGS. 2a to 2c are front, left and right side views showing the semiconductor exhaust gas treatment scrubber of the present invention in cross-section;
fig. 3 is a front view showing the external appearance of the semiconductor exhaust gas treatment scrubber of the present invention;
FIG. 4 is a left side view showing in cross section the interconnected state of the semiconductor exhaust gas treatment scrubber of the present invention;
FIGS. 5a and 5b are front and left side views showing in cross section the supply section of the semiconductor exhaust gas treatment scrubber of the present invention;
FIGS. 6a and 6b are front views of a burner showing in cross-section the semiconductor exhaust gas treatment scrubber of the present invention;
FIG. 7a is an exploded sectional view of a burner of a semiconductor exhaust gas treatment scrubber according to the present invention, FIG. 7b is an enlarged view of a portion 7b of FIG. 7a, and FIG. 7c is an enlarged view of a portion 7c of FIG. 7 a;
FIG. 8 is a bottom view of the burner of the semiconductor exhaust gas treatment scrubber of the present invention;
FIGS. 9a to 9c are front, top and bottom views showing in cross-section the combustion chamber of the semiconductor exhaust gas treatment scrubber of the present invention;
FIGS. 10a and 10b are left and right side views showing the combustion chamber of the semiconductor exhaust gas treatment scrubber in cross-section;
FIG. 11a is a right side view showing a combustion chamber of the semiconductor exhaust gas treatment scrubber of the present invention in cross-section, and FIG. 11b is a cross-sectional view of the combustion chamber;
FIG. 12a is a left side view of a lower chamber coupled to a lower end of the semiconductor exhaust gas treatment scrubber of the present invention and a chamber support part, and FIG. 12b is a right side view, partially in section, showing the lower chamber and the chamber support part;
FIGS. 13a and 13b are front and right side views in cross section showing the wet tower of the semiconductor exhaust gas treatment scrubber of the present invention;
FIGS. 14a and 14b are cross-sectional views taken along lines 14a-14a and 14b-14b of FIG. 13b, respectively, and FIG. 14c is a perspective view of region 1550 of FIG. 13 b;
fig. 15a to 15d are a top view, a left side view, a front view and a right side view showing a water storage tank 1600 of the semiconductor exhaust gas treatment scrubber 1000 according to the present invention in cross section; and
fig. 16 is a side view showing a circulation pump and a heat exchanger for purifying and supplying water from a water storage tank of the semiconductor exhaust gas treatment scrubber of the present invention to a wet tower.
Detailed Description
Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. In the following description and the drawings, the same or similar components are denoted by the same reference numerals, and thus, a repetitive description thereof will be omitted.
Fig. 1 is a perspective view showing the main configuration of a semiconductor exhaust gas treatment scrubber 1000 of the present invention.
As shown in the drawing, the semiconductor exhaust gas treatment scrubber 1000 of the present invention includes: a supply part 1100 for supplying semiconductor off-gas, fuel, and oxygen; a burner 1200 connected to the supply part 1100 for burning the semiconductor waste gas with a flame; a combustion chamber 1300 connected to the burner 1200 to drop particles or the like generated during the combustion of the semiconductor exhaust gas; a chamber supporting portion 1400 provided below the combustion chamber 1300 to support the combustion chamber 1300; a wet tower 1500 installed at a side of the combustion chamber 1300 to discharge the filtered gas into the atmosphere while adsorbing and dropping the fine particles or the like transferred from the combustion chamber 1300 using water; and a water storage tank 1600 coupled to the combustion chamber 1300 and the wet tower 1500 to collect and discharge particles or the like falling from the combustion chamber 1300 and the wet tower 1500 using water contained therein.
Here, the combustion chamber 1300 and the wet tower 1500 may be connected to each other through intermediate connection pipes 1353 and 1513. Further, the combustion chamber 1300 and the water storage tank 1600 may be connected to each other through an intermediate connection pipe 1353 and a lower connection pipe 1354, and the wet tower 1500 and the water storage tank 1600 may be connected to each other through another lower connection pipe 1514.
Fig. 2a to 2c are front, left and right side views showing the semiconductor exhaust gas treatment scrubber 1000 of the present invention in cross-section.
As shown, the supply portion 1100 is used to supply semiconductor off-gas, fuel, and oxygen to the burner 1200. Such a supply portion 1100 includes a plurality of exhaust gas supply pipes 1111, a plurality of bypass exhaust gas supply pipes 1112, at least one fuel supply pipe 1115, and at least one oxygen supply pipe 1112. In the drawing, reference numeral 1113 denotesa three-way valve, and numeral 1114 denotes a sensor unit. The supply portion 1100 will be described in more detail below.
The burner 1200 serves to appropriately mix the semiconductor off-gas, the fuel, and the oxygen supplied from the supply portion 1100 and simultaneously generate a flame, thereby burning the off-gas to generate particles. Such a burner 1200 includes: a body (not shown) through which semiconductor exhaust gas, fuel, and oxygen pass; a fuel nozzle body (not shown) serving as a fuel supply nozzle; an oxygen nozzle body (not shown) serving as an oxygen supply nozzle; and an assembly (not shown) containing a coolant and enabling the combustor 1200 to be fixed to the combustion chamber 1300. Such a combustor 1200 will be described in more detail below.
The combustion chamber 1300 prevents heat of the burner 1200 from flowing out to the outside and guides particles, residual gas or the like generated by the burner to the wet tower 1500 located at the side of the combustion chamber 1300 or the water storage tank located below the combustion chamber 1300. Such a combustion chamber 1300 includes: a top cover 1310 to which the burner 1200 is coupled at a middle portion thereof; an inner chamber 1320 extending downward from the bottom side of the top cover 1310 and the circumference of the burner 1200 by a predetermined length; and an outer chamber 1330 extending from the bottom of the top cover 1310 by a predetermined length and surrounding the outer circumferential edge of the inner chamber 1320. Further, a particle removing gas supply portion 1360 for supplying a particle removing gas is provided in the combustion chamber 1300, thereby preventing particles generated by the flame of the burner 1200 from being deposited on the inner wall. The combustion chamber 1300 and the particulate removing gas supply portion 1360 will be described in more detail below.
The chamber supporting part 1400 is installedbelow the combustion chamber 1300 and serves to support the combustion chamber 1300 upward below the combustion chamber 1300. The combustion chamber 1300 can be easily removed when the chamber support portion 1400 is moved laterally, as described below. This will be described in more detail below.
The wet tower 1500 serves to filter and collect particles and the like transferred from the combustion chamber 1300 using water, send them to a water storage tank 1600 located below the wet tower 1500, and discharge filtered clean gas to the outside. Such wet column 1500 includes a base column 1510, a first column 1520, a second column 1530, a third column 1540, and a fourth column 1550. Such a wet tower 1500 will be described in more detail below.
Here, the combustion chamber 1300 and the wet tower 1500 are connected to each other by the intermediate connection pipes 1353 and 1513 as described above. Further, the combustion chamber 1300 is connected to the water storage tank 1600 positioned below the combustion chamber 1300 through the middle connection pipe 1353 and the lower connection pipe 1354. Further, the wet tower 1500 is connected to the water storage tank through a lower connection pipe 1514.
The water storage tank 1600 is used to collect particles and the like falling from the combustion chamber 1300 and the wet tower 1500 using water. Further, the wet tower 1600 serves to send the collected fine particles to the outside or purify and send the water to the wet tower 1500. Such a water storage tank 1600 includes a first region 1613 connected to the combustion chamber 1300 and the wet tower 1500, a second region 1614 (see fig. 2b) for receiving only clean water by separating particles from the first region 1613, and a filtering part 1617 disposed between the first region 1613 and the second region 1614 for filtering water. Here, the first region 1613 is provided with a bubble generator 1630 for generating bubbles at predetermined time intervals, thereby preventing accumulation of particles. Further, a discharge pump 1620 is provided for operating the bubble generator 1630 and discharging the particles and water from the first region 1613. In addition, the second region 1614 is provided with a circulation pump 1640 for pumping and delivering the water filtered by the second region 1614 to the wet tower 1500 (see fig. 2b), and the second region 1614 is also provided with a heat exchanger 1650 for cooling the water (see fig. 2 c). Such a water storage tank 1600 will be described in more detail below.
In the drawings, reference numeral 1701 denotes a housing forming the external appearance of the air cleaner 1000 of the present invention, 1702 denotes an operation panel, and 1703 denotes casters.
Fig. 3 is a front view showing the external appearance of the semiconductor exhaust gas treatment scrubber 1000 of the present invention.
The supply section, burner, combustion chamber, chamber support section, wet tower, and water storage tank described above may all be mounted in a substantially square housing 1701. Further, an operation panel 1702 may be provided at the front of the case 1701 to control the respective parts. Further, a plurality of casters 1703 may be mounted below the case 1701.
Fig. 4 is a left side view illustrating a state where the semiconductor exhaust gas treatment scrubbers 1000 and 2000 of the present invention are connected to each other.
As shown, the semiconductor exhaust gas treatment scrubbers 1000 and 2000 of the present invention may be connected to each other. That is, the sensor unit 1114 provided in one scrubber 1000 may be connected with the sensor unit 1114 provided in another scrubber 2000 through the connection pipe 1704. Therefore, if the semiconductor exhaustgas is not smoothly supplied to the one scrubber 1000, the corresponding sensor 1114 measures this and causes the exhaust gas to be delivered to the other scrubber 2000 through the connection pipe 1704. In the drawing, reference numeral 1112 denotes a semiconductor exhaust gas supply pipe, and reference numeral 1113 denotes a three-way valve.
Fig. 5a and 5b are front and left side views showing a supply part 1100 of a semiconductor exhaust gas treatment scrubber 1000 of the present invention in a sectional manner.
As shown, the supply portion 1100 includes an exhaust gas supply pipe 1111, a bypass exhaust gas supply pipe 1112, a fuel supply pipe 1115, an oxygen supply pipe 1116, a three-way valve 1113, and a sensor unit 1114. The exhaust gas supply pipe 1111 is connected to the burner 1200 to supply the semiconductor exhaust gas to the burner 1200. The bypass exhaust gas supply pipes 1112 are respectively connected to the exhaust gas supply pipes 1111 to send exhaust gas overflowing from the exhaust gas supply pipes 1111 to another apparatus or a scrubber. The fuel supply pipe 1115 is connected to the combustor 1200 to supply fuel (such as liquefied natural gas, liquefied petroleum gas, etc.) to the combustor 1200. An oxygen supply pipe 1116 is connected to the burner 1200 to supply, for example, air to the burner 1200. The three-way valve 1113 is connected between the exhaust gas supply pipe 1111 and the bypass exhaust gas supply pipe 1112, thereby determining the supply direction of the exhaust gas. Further, the sensor unit 1114 detects the amount of exhaust gas supplied as described above, and determines whether to transfer the exhaust gas to another scrubber.
Fig. 6a and 6b are different front views illustrating the burner 1200 of the semiconductor exhaust gas treatment scrubber 1000 of the present invention.
Further, fig. 7a is an exploded sectional view of a burner 1200of the semiconductor exhaust gas treatment scrubber 1000 according to the present invention, fig. 7b is an enlarged view of a portion 7b of fig. 7a, and fig. 7c is an enlarged view of a portion 7c of fig. 7 a.
Fig. 8 is a bottom view of the burner 1200 of the semiconductor waste gas treatment scrubber 1000 according to the present invention.
First, as shown in fig. 6a and 6b, the combustor 1200 includes a main body 1210, a fuel nozzle body 1220, an oxygen nozzle body 1230, and an assembly body 1240.
The main body 1210 is formed with at least one exhaust gas supply channel 1112 connected to a semiconductor exhaust gas supply pipe (not shown), wherein the exhaust gas supply channel 1112 is formed to extend from the top of the main body 1210 to the bottom of the main body 1210, thereby supplying semiconductor exhaust gas therethrough. In addition, the main body 1210 is formed with a fuel supply channel 1212 for supplying fuel, which is connected to the fuel supply tube 1115 of the supply part 1100, wherein the fuel supply channel 1212 extends downward from the top of the main body 1210 through the main body 1210 and then is bent toward the side of the main body 1210 where an outlet of the fuel supply channel is formed. In addition, the main body 1210 is formed with an oxygen supply channel 1213 connected to the oxygen supply tube 1116 of the supply portion 1100, wherein the oxygen supply channel 1213 extends downward from the top of the main body 1210 and then is bent with respect to the fuel supply channel toward the opposite side portion of the main body 1210 where the outlet of the oxygen supply channel 1213 is formed. In fig. 6a, G denotes exhaust gas supplied through exhaust gas supply passage 1211, F denotes fuel supplied through fuel supply passage 1212, and O denotes oxygen supplied through oxygen supply passage 1213.
Next, referring to fig. 7a, the main body 1210 is formed with an inverted conical surface 1214, the apex of which protrudes downward from the main body 1210, and a blocking wall 1215 is formed around the conical surface 1214 in such a manner as to extend a predetermined length. In addition, an extension 1216 is formed around the outer circumferential edge of the blocking wall 1215 and the extension 1216 extends radially outward from the outer circumferential edge of the blocking wall 1215 by a predetermined horizontal length, wherein the extension 1216 is formed with one or more grooves 1216a (see fig. 7b) on the outer circumferential surface thereof. Above the extension portion 1216, a first flange 1217 with a stepped portion 1217a is further formed around the outer circumferential surface of the main body 1210, and the first flange 1217 extends radially outward from the outer circumferential surface of the main body 1210 by a horizontal length greater than the horizontal length of the extension portion 1216. Above the first flange 1217, a second flange 1218 is further formed around the outer circumferential surface of the main body 1210, and the second flange 1218 extends radially outward from the outer circumferential surface of the main body 1210 by a horizontal length greater than that of the first flange 1217, wherein the second flange 1218 is formed with a concave portion 1281a having a predetermined depth.
Here, the fuel supply channel 1212 extends downward from the top of the main body 1210 through the main body 1210 and then bends to the side of the main body 1210, so that an outlet 1212a of the fuel supply channel 1212 is formed between the extended portion 1216 and the first flange 1217. In addition, the oxygen supply channel 1213 extends downward from the top of the main body 1210 through the main body 1210 and then bends to the side of the main body 1210, so that an outlet 1213a of the oxygen supply channel 1213 is formed between the first and second flanges 1217 and 1218.
The groove 1216a formed on the extended portion 1216 of the main body 1210 is inclined at a predetermined angle (e.g., 15 degrees) (see fig. 7b) such that an imaginary line extending from the lower end thereof intersects the center line of the main body 1210. In addition, the extension 1216 is in close contact with the fuel nozzle body 1220, so that the groove 1216a forms a fuel nozzle 1216b (see fig. 6b), and the fuel nozzle body 1220 is also in close contact with the first flange 1217 and the extension 1216 (see fig. 6b), thereby forming a fuel space 1216c between the main body 1210 and the fuel nozzle body 1220. Here, the tip of the fuel nozzle body 1220 is engaged with the stepped portion 1217a of the first flange 1217.
As shown in fig. 7a, the fuel nozzle body 1220 is formed with a central hole 1221 extending through a central portion thereof such that the main body 1210 is fitted into the central hole 1221, and the fuel nozzle body 1220 is further formed with an extension portion 1222, the extension portion 122 being formed around a lower end of a circumferential surface of the fuel nozzle body 1220 and extending radially outward from the lower end of the circumferential surface of the fuel nozzle body 1220 by a predetermined horizontal length, wherein one or more recesses 1222a are formed on the circumferential surface of the extension portion 1222. The grooves 1222a (see fig. 7c) formed on the extension 1222 of the fuel nozzle body 1220 are inclined at an angle (e.g., 30 degrees) that is greater than the angle of the grooves 1216a formed on the extension 1216 of the main body 1210. Further, the central hole 1221 of the fuel nozzle body 1220 is formed with an inclined surface 1223 that is disposed to be able to abut against the extended portion 1216 of the main body 1210, thereby covering the groove 1216a of the main body 1210. With the inclined surface 1223 of the fuel nozzle body 1220 in close contact with theextension 1222 of the oxygen nozzle body 1230 (see fig. 6b), the oxygen nozzle 1222b is formed by the groove 1222a, while with the oxygen nozzle body 1230 in close contact with the second flange 1218 of the body 1210 and the extension 1222 of the fuel nozzle body 1220 (see fig. 6b), an oxygen space 1222c is defined by the first flange 1217, the second flange 1218, the fuel nozzle body 1220 and the oxygen nozzle body 1230. Here, the top end of the oxygen nozzle body 1230 engages the recessed portion 1218a of the second flange 1218.
As shown in fig. 7a, the oxygen nozzle body 1230 has a central hole 1231 through the central portion of the oxygen nozzle body 1230 such that the fuel nozzle body 1220 can be fitted into the central hole 1231, and the oxygen nozzle body 1230 further has an extension portion 1232 formed around the lower end of the oxygen nozzle body 1230 and extending radially outward from the lower end of the oxygen nozzle body 1230 by a predetermined horizontal length, wherein a stepped portion 1233 is formed on the extension portion 1232. Here, the central hole 1231 of the oxygen nozzle body 1230 is also formed with an inclined surface 1234, which is disposed to be able to abut against the extension 1222 of the fuel nozzle body 1220.
As shown in fig. 7a, the assembly body 1240 has a central hole 1241 through a central portion of the assembly body 1240 so that the oxygen nozzle body 1230 can be fitted into the central hole 1241, and the assembly body 1240 has an extension 1242 formed around a top end of the assembly body 1240 and extending radially outward from the top end of the assembly body 1240 by a predetermined horizontal length. As shown in fig. 6b, the assembly body 1240 engages the stepped portion 1233 of the oxygen nozzle body 1230 at its lower end and a coolant flow space 1235 is formed between the oxygen nozzle body 1230 and the assembly body 1240. Of course, the coolant pipe 1236 is connected to the coolant flowing space 1235.
Meanwhile, as shown in FIG. 8, the fuel nozzles 1216b are generally arranged in an annular array, and each of the fuel nozzles is formed in a substantially concave form. Further, as shown in fig. 8, the oxygen nozzles 1222b are also generally arranged in a ring array, and each of the oxygen nozzles is formed in a substantially concave form. Of course, the oxygen nozzles 1222b are positioned outside of the fuel nozzles 1216 b.
As described above, the fuel nozzles 1216b and the oxygen nozzles 1222b are inclined at a predetermined angle and are oriented substantially toward the center of the lower end of the combustor 1200. That is, the angle of inclination of the oxygen nozzles 1222b is greater than the angle of inclination of the fuel nozzles 1216b and is oriented toward the central axis of the combustor 1200. Accordingly, the fuel and oxygen emitted from the nozzles 1216b and 1222b may be conveniently mixed in the vicinity of the nozzles 1216b and 1222b, and a funnel-shaped flame may be formed, which converges at the center of the lower end of the burner 1200.
Further, since the barrier wall is formed substantially at the lower end of the burner 1200, the mixed gas of the fuel and the oxygen can be separated from the semiconductor off-gas. This prevents dilution of the mixed gas of fuel and oxygen, which is caused by mixing of the mixed gas with the exhaust gas containing a large amount of inert gas (nitrogen), so that the root position of the flame can be kept stable.
In addition, the burner 1200 according to the present invention is formed with an inverted conical surface 1214 at the lower portion of the main body 1210 to delay the mutual mixing of the exhaust gas flows. This is provided in consideration of the delayed intermixing action with the exhaust gas flows of the adjacent exhaust gas supply channels 1211, which can be achieved by making the outlet end positions of the respective exhaust gas supply channels 1211 spatially different from each other.
Thus, the combustion efficiency of the burner 1200 is improved since the mixing of the fuel and the oxygen is certainly achieved by the funnel-shaped flame. Further, since the mixed gas of the fuel and the oxygen and the exhaust gas are separated from each other by the blocking wall 1215 provided near the flame formation position, the root position of the flame can be stably maintained. Further, since the central lower portion of the burner 1200 is formed in a funnel shape to delay the mutual mixing of the exhaust gas flows, the combustion efficiency is improved.
Fig. 9a to 9c are front, top and bottom views showing the combustion chamber 1300 of the semiconductor exhaust gas treatment scrubber 1000 of the present invention in cross-section.
As shown, the combustion chamber 1300 includes: a top cover 1310 at the center of which the burner 1200 is mounted; an inner chamber 1320 depending from the bottom side of the top cover 1310 around the burner 1200; an outer chamber 1330 depending from the bottom side of top cover 1310 about inner chamber 1320; and a lower chamber (not shown) connected to a lower portion of the outer chamber 1330. The lower chamber will be described in detail below. The chamber 1320 includes an upper chamber 1321 and a lower chamber 1322. In addition, outer chamber 1330 also includes an upper outer chamber 1331 and a lower outer chamber 1332. The upper interior chamber 1321 and the lower interior chamber 1322 are detachably engaged with each other. The upper outer chamber 1331 and the lower outer chamber 1332 are also detachably engaged with each other.
The burner 1200 configured as described above is substantially coupled to the central portion of the top cover 1310. Further, an upper inner chamber 1321 of the inner chamber 1320 is coupled to the bottom side of the top cover 1310 around the peripheral edge of the burner 1200, and a lower inner chamber 1322 is coupled to the lower end of the upper inner chamber 1321. Upper outer compartment 1331 of outer compartment 1330 is joined to the underside of top cover 1310 about the peripheral edge of inner compartment 1320, and lower outer compartment 1332 is joined to the lower end of upper outer compartment 1331. In addition, a plurality of anchor members 1346 are engaged between lower inner chamber 1322 and lower outer chamber 1332, thereby anchoring the two chambers to one another. With this configuration, the present invention allows lower interior chamber 1322 and lower exterior chamber 1332 to be easily separated together from upper interior chamber 1321 and upper exterior chamber 1331.
Here, a sealing ring 1341 is further provided between the top cover 1310 and the upper inner chamber 1321 of the inner chamber 1320, wherein at least one rubber ring 1342 is engaged with an inner surface of the sealing ring 1341 and is in close contact with the top cover 1310. The upper internal chamber 1321 is secured to the top cover 1310 by bolts and nuts that extend through the seal ring 1341 and the top cover 1310. In addition, a cooling pipe 1343 is coupled between the top cover 1310 and the upper outer chamber 1331 of the outer chamber 1330, through which coolant is supplied, so that the combustion chamber 1300 is not overheated during operation of the combustor 1200. Of course, the cooling pipe 1343 is formed with one or more through holes 1343a for spraying a coolant. An ignitor 1344 and an Ultraviolet (UV) sensor 1345 are mounted through the upper outer chamber 1331 and the upper inner chamber 1321, respectively. The pilot 1344 is used to achieve initial ignition of the burner 1200, while the ultraviolet sensor 1345 is used to detect whether ignition is properly achieved. Of course, if the ultraviolet sensor 1345 determines that ignition has been achieved, the ignitor 1344 is deactivated. The water storage tank 1600 is connected to the lower end of the combustion chamber 1300 by a structure, which will be described in detail later.
Meanwhile, the combustion chamber 1300 is further provided with a particle removing gas supply portion 1360, and the particle removing gas supply portion 1360 includes a gas supply tube 1361, a gas tube 1362 connected to the gas supply tube 1361, and at least one gas nozzle 1363 connected to the gas tube 1362.
The gas supply tube 1361 is coupled to the top cover 1310 of the combustion chamber 1300 and extends through the sealing ring 1341 disposed between the top cover 1310 and the upper internal chamber 1321.
Further, the gas tube 1362 is generally square in cross-section, and the gas tube 1362 is disposed between the sealing ring 1341 and the upper internal chamber 1321.
A gas nozzle 1363 connected to the gas pipe 1362 extends downward a predetermined length in the upper inner chamber 1321. More specifically, the gas nozzle 1363 includes a straight portion 1363a extending parallel to the inner wall of the combustion chamber 1300 and a curved portion 1363b curved from an end of the straight portion 1363a toward the inner wall of the combustion chamber 1300. Four gas nozzles 1363 may be provided, arranged substantially centered about the center of the combustion chamber 1300, with an angular spacing of 90 degrees between two adjacent gas nozzles 1363. Of course, the number of gas nozzles 1363 is just an example, and the present invention is not limited to the number of gas nozzles 1363 described. Further, the gas nozzles 1363 may be disposed at an angle or inclination with respect to a vertical direction of the combustion chamber 1300 such that the gas may be supplied in a swirling manner within the combustion chamber 1300 (i.e., the upper inner chamber 1321 and the lowerinner chamber 1322).
Preferably, an inert gas that does not react with the semiconductor off-gas may be used as the gas supplied to the inside of the inner chamber 1320 through the particle removing gas supply portion 1360. More preferably, nitrogen gas, which is most commonly used in semiconductor manufacturing processes, may be used as the gas, but the present invention is not limited to such a gas.
Preferably, the gas supplied to the inside of the inner chamber 1320 through the particle removing gas supply portion 1360 is substantially supplied in a pulse form. This is because if the gas is supplied in the form of pulses, the impulse transmitted to the inner wall of the inner chamber 1320 is greater than the impulse transmitted to the inner wall when the gas is continuously supplied at a fixed flow rate. The particles that will be deposited or have been deposited on the inner walls of the inner chamber 1320 are separated or detached from the inner walls by the impulse transmitted to the inner walls of the inner chamber 1320 to fall freely. In fig. 9a, the particles are indicated with reference P.
More specifically, the pressure of the inert gas supplied through the fine particle removing gas supply portion 1360 is preferably in the range of 1kgf/cm2To 10kgf/cm2And (3) a range. That is, through a comprehensive study of the degree of deposition or removal of fine particles and the stability of the apparatus, which was conducted by changing the pressure of the inert gas, it was found that: if the pressure of the inert gas is not more than 1kgf/cm2The particles are easier to deposit or difficult to remove although the stability of the device is very good; and if the pressure of the inert gas is not less than 10kgf/cm2The stability of the device is compromised although the particles are difficult to deposit or easy to remove. Here, the stability of the device means that the performance of the device is not affected by a suction efficiency reduction phenomenon of semiconductor exhaust gas, fuel, oxygen, etc., which is generated due to a positive pressure due to the supply of inert gas. Of course, the inside of the combustion chamber 1300 is normally in a negative pressure state.
In practice, the gas supplied through the particle-removing gas supply portion 1360, which is introduced into the combustion chamber 1300 through the exhaust gas supply pipe 1111 and the burner 1200, may be supplied in a slightly different form according to the type and amount of semiconductor exhaust gas.
For example, if an exhaust gas containing a large amount of silicon is introduced, a large amount of particles are generated. Therefore, it is advantageous to supply the inert gas in a pulse form throughout the operation of the burner 1200 so that particles are not deposited on the inner walls of the inner chamber 1320.
Further, if the amount of silicon contained in the introduced exhaust gas is small, less fine particles are generated. It is therefore advantageous to supply the inert gas intermittently in the form of pulses only for a predetermined period of time. That is, even if the inert gas for removing particles is not supplied all the time during the operation of the burner 1200, but is supplied for a certain period of time at a predetermined interval, particles that have been deposited on the inner wall of the inner chamber 1320 can be easily removed.
Occasionally, the inert gas may be supplied only after particles are deposited and accumulated on the inner wall of the combustion chamber 1300 beyond a predetermined thickness. That is, only when the pressure of the combustion chamber 1300 is lower than a pressure close to the atmospheric pressure, the inert gas is supplied to the combustion chamber 1300 for a certain time so that theparticles that have been deposited on the inner wall can be removed. Of course, a pressure sensor (not shown) may be installed in the inner chamber 1320 to detect the pressure within the combustion chamber 1300, and particularly, the pressure in the inner chamber 1320.
In fig. 9b, reference numeral "h" denotes a lifting handle, which is mounted on the lower outer chamber 1332 so that a user can draw the lower outer chamber 1332 and the lower inner chamber 1322 to the outside together. Further, reference numeral "f" denotes a frame installed within the exhaust gas treatment device to support the combustion chamber 1300, and "b" denotes a bracket for coupling the combustion chamber 1300 to the frame.
Fig. 10a and 10b are left and right side views showing a combustion chamber 1300 of the semiconductor exhaust gas treatment scrubber 1000 in cross section.
As shown, according to the present invention, at least one lifting handle h is provided on the front side of the lower outer chamber 1332 of the outer chamber 1330, and a lighter 1344 and an ultraviolet sensor 1345 are provided through the upper outer chamber 1331 and the upper inner chamber 1321. Of course, the burner 1200 is incorporated substantially in the center of the top cover 1310. Since the other components have already been described in connection with fig. 9a to 9c, they will not be explained further.
Fig. 11a and 11b are a right side view and a cross-sectional view, respectively, in cross-section, illustrating a combustion chamber 1300 of the semiconductor exhaust treatment scrubber 1000 of the present invention.
As shown, in accordance with the present invention, a pilot 1344 and uv sensor 1345 are mounted through the upper outer chamber 1331 and the upper inner chamber 1321, while the burner 1200 is mounted substantially in the center portion of the top cover. Additionally, an anchor member 1346 extends from the lower outer chamber 1332 within the lower outer chamber 1332, wherein the lower inner chamber 1322 is coupled to the anchor member 1346. Since the other components have already been described in connection with fig. 10a and 10b, they will not be explained further.
With the above-described configuration, the combustion chamber 1300 and the particulate removing gas supplying portion 1360 of the semiconductor exhaust gas treatment scrubber 1000 of the present invention operate as follows.
First, fuel and oxygen are supplied from a fuel supply pipe 1115 and an oxygen supply pipe 1116, respectively, which are connected to the burner 1200, and then, a pilot 1344 is operated so that a flame is generated from the burner 1200. The ultraviolet sensor 1345 detects an ignition state of the burner 1200, and after the burner 1200 surely achieves ignition, the pilot 1344 stops operating.
Then, the semiconductor off-gas is supplied from the semiconductor manufacturing process line through the off-gas supply pipe 1111 connected to the burner 1200. Exhaust gas is introduced into the interior chamber 1320 of the combustion chamber 1300 through the burner 1200. The exhaust gas introduced into the inner chamber 1320 is combusted by the flame from the burner 1200 to form a quantity of particles.
Here, the coolant is supplied through the cooling pipe 1343 installed in the outer chamber 1330 and the top cover 1310, so that the coolant flows along the outer wall 1610 of the inner chamber 1320, and thus, the inner chamber 1320 is not heated above a predetermined temperature level.
During this operation, the particulate removing gas supplying portion 1360 of the present invention also works. That is, an inert gas such as nitrogen is supplied through the gas supply tube 1361 and then supplied into the inner chamber 1320 through the gas tube 1362 and the gas nozzle 1363.
Each nozzle 1363 includes a straight portion 1363a and a curved portion 1363b, wherein the distal end of the curved portion 1363b is oriented toward the inner wall of the inner chamber 1320 such that the inert gas from the gas nozzle 1363 is blown directly onto the inner wall of the inner chamber 1320. That is, a predetermined degree of momentum is transmitted to the inner walls of the inner chamber 1320. Accordingly, particles to be deposited or already deposited on the inner wall of the inner chamber 1320 are separated and removed from the inner chamber 1320 and fall down.
In addition, since four gas nozzles 1363 are provided, which are arranged centering on the center of the inner chamber 1320 at equal intervals and inclined at a predetermined angle with respect to the vertical direction of the inner chamber 1320, the inert gas is supplied into the inner chamber 1320 through the gas nozzles 1363 in a swirling manner. Accordingly, the particles that have been deposited on the inner wall of the inner chamber 1320 are more effectively removed and fall down.
As described above, the inert gas supplied to the inside of the inner chamber 1320 through the particle removing gas supply portion 1360 is supplied in a pulse form. Accordingly, due to the pulse form of the inert gas, an impulse is more effectively applied to the inner wall of the inner chamber 1320, and thus, particles to be deposited or already deposited on the inner wall are smoothly removed to fall freely.
Similarly, if an off-gas containing a large amount of silicon is introduced, the inert gas supplied through the particle-removing gas supply portion 1360 may be continuously supplied. That is, since a large amount of particles are generated when the exhaust gas containing a large amount of silicon is burned by the burner 1200, the inertgas is continuously supplied during the operation of the burner 1200. Of course, in this case, the inert gas is also supplied in the form of pulses.
Further, if an off-gas containing a small amount of silicon is introduced, the inert gas supplied through the particle-removing gas supply portion 1360 may be intermittently supplied for a predetermined period of time. That is, since a small amount of particles are generated during the combustion of the exhaust gas containing a small amount of silicon by the burner 1200, the particles on the inner wall of the inner chamber 1320 can be effectively removed even though the inert gas is supplied for a predetermined period of time without continuously supplying the inert gas during the operation of the burner 1200. Of course, in this case, the inert gas is also supplied in the form of pulses.
Further, after the pressure in the inner chamber 1320 has been detected, if the pressure in the inner chamber 1320 is substantially close to the atmospheric pressure, the inert gas supplied through the particle-removing gas supply portion 1360 may be supplied. The condition that the pressure in inner chamber 1320 is substantially close to atmospheric pressure means that: the internal volume of the chamber has been reduced due to the deposition and accumulation of particles on the inner walls beyond a predetermined thickness. Accordingly, it is necessary to remove particles that have been deposited on the inner wall of the inner chamber 1320 by supplying an inert gas to the inside of the inner chamber 1320 in the form of a pulse.
Fig. 12a and 12b are a left side view and a right side view partially in section, which show a chamber support portion 1400 and a lower chamber 1350 coupled to a lower end of the semiconductor exhaust treatment scrubber 1000 of the present invention.
As shown in the drawings, a lower chamber 1350 formed substantially in a funnel shape is detachably installed at a lower portion of an outer chamber of a combustion chamber according to the present invention, and a particle guide member 1351 is installed in the lower chamber 1350, wherein the particle guide member 1351 has a substantially funnel shape to guide particles generated during combustion of exhaust gas to a wet tower 1500 and a water storage tank 1600.
Here, the fine particle guide member 1351 is provided with an inert gas pipe for injecting an inert gas, thereby preventing steam from being introduced back into the combustion chamber 1300 from the water storage tank 1600 again. In addition, an intermediate connection pipe 1353 is connected to a lower end of the lower chamber 1350. Accordingly, the fine particles fall toward the water storage tank 1600 through the intermediate connection pipe 1353 after passing through the fine particle guide member 1351.
In addition, the chamber support part 1400 is fixed to the lower chamber 1350, thereby detachably supporting the combustion chamber 1300.
The chamber supporting part 1400 includes: a pair of guide rails 1420 linearly mounted on the support plate 1410; a pair of guide blocks 1430 mounted on the guide rail 1420 to be reciprocatable in a horizontal direction; a plurality of supporting stages 1440, each having a horizontal surface 1441 formed on the top thereof and a descending surface 1442 extending downward from the horizontal surface at a predetermined angle; and one or more support bars 1450 interconnecting the support tables 1440. Further, the lower chamber 1350 is provided with rolling bodies 1355 connected to be slidable along the horizontal surface 1441 and the descending surface 1442.
Accordingly, if the operator pulls the support rod 1450 of the chamber support portion 1400 to the side, the rolling bodies 1355 of the lower chamber 1350 slide along the horizontal surface 1441 and then along the descending surface 1442, and thus, the lower chamber 1350 can be easily separated from the lower portion of the combustion chamber 1300.
From this state, lower interior chamber 1322 and lower exterior chamber 1332 may be separated together from upper interior chamber 1321 and upper exterior chamber 1331. Accordingly, an operator can quickly and easily clean the interior of the combustion chamber 1300.
Fig. 13a and 13b are front and right side views of a wet tower 1500 showing a semiconductor exhaust gas treatment scrubber 1000 of the present invention in cross-section.
As shown, wet tower 1500 includes a base tower 1510, a first tower 1520, a second tower 1530, a third tower 1540, and a fourth tower 1550. According to the present invention, the first tower 1520, the second tower 1530, the third tower 1540, and the fourth tower 1550 may be detachably assembled to each other in a different order.
That is, according to the present invention, the heights and diameters of the first tower 1520 and the second tower 1530 may be identical to each other. Further, the heights and diameters of the third and fourth towers 1540 and 1550 may be identical to each other. Thus, the first tower 1520 and the second tower 1530 may be assembled or installed interchangeably. Additionally, third tower 1540 and fourth tower 1550 may also be interchangeably assembled or installed.
Therefore, because the first tower 1520 and the second tower 1530 may be interchangeably installed and the third tower 1540 and the fourth tower 1550 may be interchangeably installed, the wet tower 1500 may be operated in various forms according to the present invention, which may vary according to semiconductor manufacturing processes and installation conditions. Thus, one or more desired columns may be selected and separated from wet column 1500, and thus, one or more desired columns may be selectively cleaned, thereby greatly reducing the amount of time required for maintenance and repair.
The first filter 1521 is assembled to the first tower 1520, the second filter 1531 is assembled to the second tower 1530, and the third filter 1541 is assembled to the third tower 1540, the porosities of the first filter to the third filter being set to be different from each other. Specifically, the porosity is adapted to decrease in sequence from first filter 1521, second filter 1531, to third filter 1541. Thus, according to the present invention, the particles can be filtered through three stages. The filtered particulates fall into the water storage tank 1600 by means of water ejected from the base nozzle 1511 provided in the base tower 1510, the first nozzle 1522 provided in the first tower 1520, the second nozzle 1532 provided in the second tower 1530, and the third nozzle 1542 provided in the third tower 1540, whereby the filtered particulates are then collected in the water storage tank 1600.
Meanwhile, fresh water is supplied from the outside through the base nozzle 1511, and water purified from the water storage tank 1600 is supplied through the first nozzle 1522, the second nozzle 1532, and the third nozzle 1542. To this end, a water supply pump (not shown) is connected to the base nozzle 1511 to supply fresh water, a filtering part (not shown) is provided in the water storage tank, and a circulation pump (not shown) is connected to the first, second, and third nozzles 1522, 1532, and 1542 to supply water from the water storage tank. Since a drain pump (not shown) is connected to the water storage tank, even if fresh water is continuously supplied by the water supply pump, the water in the water storage tank does not overflow.
A cover 1560 opened at the top is coupled to the top of the fourth tower 1550, and a first exhaust pipe 1561 having a cooling air supply port 1562, a pressure detection port 1563, and a temperature detection port 1564 is connected to the cover 1560. Here, the cooling air having a lower temperature is supplied through the air supply port 1562, thereby causing fine particles, if any, to fall toward the fourth tower 1550. The pressure of the discharged gas is detected through the pressure detection port 1563, and the temperature of the gas is detected through the temperature detection port 1564. If the pressure and temperature detected through the pressure detection port 1563 and the temperature detection port 1564 are not within the reference ranges, it gives a warning to the user through the warning means or stops the operation of the device.
A second discharge pipe 1655 provided with a discharge amount control member 1566 is connected to a tip end of the first discharge pipe 1561 to control the discharge amount. With the aid of such a discharge amount control member 1566, the amount of purified gas can be accurately controlled in accordance with the amount of exhaust gas particulates actually generated.
Now, the construction of the base tower 1510, the first tower 1520, the second tower 1530, the third tower 1540, and the fourth tower 1550 will be described in detail.
As shown, the base tower 1510 is generally cylindrical in shape and is connected to the combustion chamber 1300 and the water storage tank 1600 through an intermediate connection tube 1512 and a lower connection tube 1513, respectively. Further, a base nozzle 1511 provided in the base tower 1510 is provided to spray water to the first filter 1521 equipped in the first tower 1520. Here, a pressure detection port 1515 is additionally formed in the foundation column 1510 to detect the internal pressure of the foundation column 1510. Therefore, according to the present invention, if the pressure values obtained from the pressure port 1514 provided in the base tower 1510 and the pressure port 1563 provided in the first discharge pipe 1561 are not within the reference range, a warning is given to the user through a warning device (not shown) or the operation of the device is stopped.
First tower 1520 is then generally cylindrical in shape and mounted on top of base tower 1510. Further, the first nozzle 1522 of the first tower 1520 is disposed to spray water downward above the first filter 1521. Thus, all the particles deposited or accumulated on the first filter 1521 fall through the base nozzle 1511 located below the first filter 1521 and the first nozzle 1522 located above the first filter 1521. Here, a first transparent window 1523 may be additionally provided on the wall of the first tower 1520 so that the first filter 1521 can be visually seen. Therefore, the state of the first filter 1521 can be visually observed through the first transparent window 1523, so that the cleaning time of the first filter 1521 can be accurately determined.
The second tower 1530 is also generally cylindrical in shape and is mounted above the first tower 1520. Further, the second nozzle 1532 of the second tower 1530 is provided to spray water downward above the second filter 1531. Here, a second transparent window 1533 may be additionally provided on the wall of the second tower 1530 so that the second filter 1531 can be visually seen. Therefore, according to the present invention, the cleaning time of the second filter can be accurately judged.
The third tower 1540 is also generally cylindrical in shape and is mounted above the second tower 1530. Further, third nozzle 1542 of third tower 1540 is configured to spray water downward over third filter 1541.
The fourth tower 1550 is also generally cylindrical in shape and is mounted above the third tower 1540. Further, a plurality of impingement plates 1551,each formed with a plurality of through-holes 1552, are disposed in the fourth tower 1550 in a manner such that: i.e., such that the impingement plates are vertically spaced from one another, wherein the through-holes 1552 formed in one impingement plate 1551 are offset relative to the through-holes formed in an adjacent impingement plate 1551. The impingement plates 1551 are stacked and anchored to each other by a plurality of bolts 1554, spacers 1555, and nuts to form a unitary structure. Therefore, according to the present invention, even though the particles pass through the first filter 1521, the second filter 1531, and the third filter 1541, the particles collide against the impact plate 1551, and are finally filtered. Further, a gas supply tube 1553 is provided to supply an inert gas, such as nitrogen, downward above the impingement plate. If the internal pressure of the wet tower 1500 of the present invention is increased (that is, a large amount of particles are adsorbed on the filters or the impingement plates), a predetermined amount of inert gas is supplied through the gas supply pipe 1553, so that all particles adsorbed on the filters 1521, 1531, and 1541 and the impingement plates 1551 can be removed. That is, the gas supplied from the gas supply tube 1553 is used to provide a degree of momentum to the filters 1521, 1531, and 1541 and the impact plate 1551, thereby separating particles from the filters and the impact plate.
Fig. 14a and 14b are cross-sectional views taken along lines 14a-14a and 14b-14b of fig. 13b, respectively, and fig. 14c is a perspective view of region 1550 of fig. 13 b.
As shown in fig. 14a, base nozzles 1511 may be arranged crosswise in a base tower 1510. Injection through holes 1511a are formed at the center and four ends of the base nozzle 1511 so that water can be injected upward from the lower portion of the foundation 1510 through a total of five through holes 1511 a. However, the present invention is not limited to the arrangement of such base nozzles 1511 and the number of the ejection through-holes 1511a formed in the base nozzles 1511.
As shown in FIG. 14b, in the second tower 1530, the second nozzle 1532 may be provided in an "H" shape. The spray through holes 1532a are formed at the center and four ends of the second nozzle 1532 so that water can be sprayed onto the second filter 1531 positioned below the second nozzle 1532 through a total of five spray through holes 1532 a. However, the present invention is not limited to the arrangement of such second nozzles 1532 and the number of the ejection through-holes 1532a formed in the second nozzles 1532.
As shown in fig. 14c, impingement plates 1551 are disposed in a fourth tower 1550, wherein each impingement plate 1551 is formed with a plurality of through-holes 1552, and a diameter of each through-hole 1552 is relatively large. Because the through-holes 1552 formed in one strike plate 1551 are offset relative to the through-holes formed in an adjacent strike plate 1551, as described above, particulates impact each strike plate 1551 as they fall through the through-holes 1552.
With the above configuration, the operation of the wet tower 1500 of the present invention is as follows.
First, exhaust gas generated from a semiconductor processing line is combusted in the combustion chamber 1300 by a flame of the burner 1200, thereby generating particles in which relatively heavy particles directly fall to the water storage tank 1600. In addition, relatively lighter particles move to the base tower 1510 of the wet tower 1500 through the intermediate connection tube 1512.
Thereafter, upon rising to the first tower 1520, the particulates pass through a first filter 1521 installed in the first tower 1520. At the same time, all particles larger than the pores of the firstfilter are retained by the first filter 1521. The particles trapped in this way are respectively dropped into the water storage tanks by the water ejected from the base nozzle 1511 and the first nozzle (which are respectively disposed below and above the first filter 1521) through the lower connection pipe 1513 installed below the base tower 1510.
Then, the particulates having passed through the first filter 1521 of the first tower 1520 attempt to pass through the second filter 1531 installed in the second tower 1530. At this point, all particles larger than the pores of the second filter 1531 are retained by the second filter 1531. The particles trapped in this way fall under the second filter 1531 by the water ejected from the second nozzle 1532 (which is disposed above the second filter 1531). Thus, the dropped particles are dropped into the water storage tank 1600 through the first filter 1521 and the lower connection pipe 1513.
Then, the particulates having passed through the second filter 1531 of the second tower 1530 attempt to pass through the third filter 1541 installed in the third tower 1540. At this point, all particles larger than the pores of third filter 1541 are retained. The particulates trapped in this manner fall under third filter 1541 by the water sprayed from third nozzle 1542 (which is disposed above third filter 1541). Accordingly, the dropped particles are dropped into the water storage tank 1600 through the second filter 1531, the first filter 1521 and the lower connection pipe 1513.
Then, the particulates having passed through the third filter 1541 of the third tower 1540 pass through the through hole 1552 of the impact plate 1551 installed in the fourth tower 1550. At this time, most of the particles directly hit the impact plate 1551 and fall without rising. Further, an inert gas such as nitrogen gas is supplied downward from above the impact plate 1551 through the gas supply pipe 1553 to remove particles from the impact plate 1551, and the particles removed in this manner thus fall into the water storage tank 1600 through the third filter 1541, the second filter 1531 and the lower connection pipe 1513.
Thus, the gas that passes through base tower 1510, first tower 1520, second tower 1530, third tower 1540, and fourth tower 1550 is a purified gas in which substantially all of the particulates are removed. Finally, as the purified gas passes through the first discharge pipe 1561, the purified gas is cooled by the cool air supplied through the cool air supply port 1562 and then descends to the impingement plate 1551. Thus, the offgas discharged to the outside through the first and second discharge pipes 1561 and 1562 is substantially completely purified without any particles.
As described above, the base tower 1510 and the first discharge pipe 1561 are formed with pressure detection ports 1514 and 1563, respectively. Accordingly, the difference between the pressure of the gas passing through the foundation tower 1510 and the pressure of the gas passing through the first discharge pipe 1561 can be determined. If the pressure differential between the gas passing through base tower 1510 and the gas passing through first discharge tube 1561 is too great, it means that a large amount of particulates are deposited or accumulated on first filter 1521, second filter 1531, third filter 1541, and impingement plate 1551. Accordingly, this state is reported to the user or the operation of the apparatus is stopped by a warning device (not shown).
When such a warning device is activated, inert gas of a predetermined pressure is supplied through the gas supply tube 1553 provided in the fourth tower 1550, so that an impulse generated by the inert gas is suitable to be transmitted to the impact plate 1551, the third filter 1541, the second filter 1531 and thefirst filter 1521, thereby removing particles from the impact plate and the filters.
Although gas is supplied through the gas supply tube 1553, if the pressure differential between the upper and lower sections is still too great, this means that it takes too soon to separate and clean at least one of the first, second, third, and fourth towers 1520, 1530, 1540, and 1540. This state is reported to the user or the operation of the device is stopped by a warning device (not shown).
Fig. 15a to 15d are a top view, a left side view, a front view and a right side view showing a water storage tank 1600 of the semiconductor exhaust gas treatment scrubber 1000 of the present invention in a sectional manner.
As shown, the water storage tank 1600 includes: a perimeter wall 1610, said perimeter wall 1610 having a generally square cross-sectional shape; a bottom wall 1611 for closing the bottom side of the peripheral wall; and a top cover 1612 for closing a top side of the peripheral wall 1610. That is, the water storage tank 1600 generally takes the form of a hollow rectangular parallelepiped and contains a certain amount of water.
In addition, the water storage tank 1600 further includes: the first region 1613, the combustion chamber 1300 and the wet tower 1500 are connected thereto through lower connection pipes 1354 and 1514, respectively; a second region 1614 separated from the first region 1613 by a partition 1615 with an opening 1616; and a filter portion 1617 fitted in the opening 1616. The lower connection pipes 1354 and 1514 communicate with the top cover 1612 of the water storage tank 1600 and are submerged in the water storage tank 1600 to a predetermined depth.
Further, a discharge pump 1620 is provided at the top of the rear region of the top cover 1612 of the water storage tank 1600. The discharge pump 1620 has a fluid inlet 1612 and a fluid outlet 1623 so that water and particulates can be pumped together. In addition, the discharge pump 1620 is also provided with an air inlet 1624 and an air outlet 1625, so that air pressure can be supplied to the discharge pump 1620 or discharged from the discharge pump 1620 to operate the discharge pump 1620. Here, the fluid inlet 1612 is formed at the top of the rear side of the discharge pump 1620. An inlet pipe 1622 is connected to a fluid inlet 1612, wherein the inlet pipe 1622 extends to the bottom of the water storage tank 1600 and is seated on the first region 1613 so that it can draw in water and particulates from the water storage tank 1600. Further, since the fluid outlet 1623 is formed substantially at the top end of the discharge pump 1620, the particles and the water can be completely discharged to the outside. Although not shown in the drawings, an outlet pipe is connected to the fluid outlet 1623. In the drawings, reference numeral "a" denotes air and "w + p" denotes water and particles.
Meanwhile, an air inlet 1624 is formed at the front of the discharge pump 1620, and an air supply pipe (not shown) previously provided in the semiconductor pipe is connected to the air inlet 1624. Further, an air outlet 1625 is formed at a rear lower end of the discharge pump 1620, and a bubble generator 1630 is connected to the air outlet 1625 through a pipe 1625 a. The bubble generator 1630 is located in the first region of the water storage tank 1600. Of course, the bubble generator 1630 extends through the top cover 1612 and is submerged in the water storage tank 1600 to a predetermined depth.
With the above-described structure, air wasted during the operation of the discharge pump 1620 is transferred to the bubble generator 1630 through the air outlet 1625 and the pipe 1625a, and thus, a predetermined degree of momentum is periodically transferred to the air within the first region 1613 of the water storage tank 1600. Thus, the particles intended to settle and settle in the first region 1613 always float in the water. Thus, when the discharge pump 1620 is operated, the particles floating in this manner are easily discharged to the outside along the inlet pipe 1622, the fluid inlet 1621, and the fluid outlet 1623 together with water. That is, the particles do not settle and deposit too thick on the bottom of the water storage tank 1600. Here, the bubble generator 1630 is preferably, but not exclusively, constituted by a noise damper or the like that can reduce noise from the discharge pump 1620 and deliver a predetermined degree of momentum into the water. Although the drawing shows that only one bubble generator 1630 is coupled to the top cover 1612, it is preferable to provide at least three bubble generators connected to the top cover 1612 corresponding to the first region 1613 and spaced apart from the top cover 1612, so that the precipitation and deposition of particles can be prevented in the entire first region 1613 of the water storage tank 1600.
Meanwhile, a partition 1615 dividing the water storage tank 1600 into a first region 1613 and a second region 1614 is also provided with a filtering portion 1617, the filtering portion 1617 being rectangular and having a filter on each side thereof when viewed from a plan view. Therefore, when the water in the first region 1613 flows to the second region 1614, the water flows after the particles are filtered by the filtering part 1617. Accordingly, the water in the first region 1613 is cloudy because it contains particulates, while the water in the second region 1614 is cleaner because the particulates have been filtered out.
Because first region 1613 contains particulates and water, combustor 1300 is connected to first region 1613 by a lower connecting tube 1354, while the wet tower is connected to first region 1613 by another connecting tube 1514. Further, for the reasons described above, the bubble generator 1630 and the inlet pipe 1622 connected to the air outlet 1625 of the discharge pump 1620 are also provided in the first region 1613.
A sodium hydroxide inlet 1618 is formed in the top cover 1612 corresponding to the second region 1614 of the water storage tank 1600. Further, a pH sensor for detecting the pH of the water in the water storage tank 1600 is connected to the sodium hydroxide inlet 1618 side. In the figure, only one sensor carrier 1619 is shown for attaching the pH sensor. Generally, the particles generated after burning the semiconductor exhaust gas after being collected in water increase the acidity of the water. That is, the microparticles acidify the water. Thus, as described above, the acidity of the water is measured by the pH sensor, and an amount of sodium hydroxide is placed into the water through the sodium hydroxide inlet 1618. Thus, the water in the water storage tank 1600 is always maintained in a neutral state. Thereby, each structure assembled in the water storage tank 1600 can be prevented from being corroded by water.
A circulation pump 1640 is connected to the rear side wall 1600 of the water storage tank 1600. Such a circulation pump 1640 also has an inlet 1641 and an outlet 1642. The inlet 1641 of the circulation pump 1640 is also connected to the outer wall 1610 corresponding to the second region of the water storage tank 1600. In addition, the outlet 1642 of the circulation pump 1640 is connected to a heat exchanger 1650. Thus, the temperature of the water in the water storage tank is raised by the water used to cool the combustor 1300 or the particles passing through the combustor 1300, wherein the water is cooled by the circulation pump 1640 and the heat exchanger 1650. Further, the water passing through the heat exchanger 1650 is supplied to the wet tower 1500 and then falls again into the first region 1613 of the water storage tank 1600 through the lower connection pipe 1514. Thus, all the fine particles collected from the wet tower 1500 are completely collected in the water in the first region 1613 of the water storage tank 1600, and the water is also cooled by the circulation pump 1640 and the heat exchanger 1650. The relationship between the circulation pump 1640 and the heat exchanger 1650 is shown in more detail in fig. 16.
With the above-described structure, the semiconductor exhaust gas treatment scrubber 1000 of the present invention operates as follows.
As is well known, if the semiconductor exhaust gas is combusted by the burner 1200 and the combustion chamber 1300, particles are generated. Among the generated particles, the heavier particles fall down into the first region 1613 of the water storage tank 1600 through the lower connection pipe 1354 due to its gravity. Of course, the particles thus dropped are collected in the water of the first region 1613.
Meanwhile, the lighter fine particles are transferred into the wet tower 1500 through the intermediate connection pipes 1353 and 1513 without falling. However, the wet tower 1500 is designed such that water falls from the upper portion to the lower portion thereof, and is provided with a plurality of filters (not shown), and fine particles also fall into the first region 1613 of the water storage tank 1600 through the lower connection pipe 1514. Therefore, the fine particles that have fallen are also collected in the water of the first region 1613.
The water of the first region 1613 is then soiled by the particulates that have fallen and collected therein. Accordingly, the discharge pump 1620 operates for a predetermined length of time to discharge the dirty water (particles and water) to the outside.
Here, the discharge pump 1620 is a pneumatically operated diaphragm pump. Accordingly, the powder and the fine particles existing in the first region 1613 are sucked through the fluid inlet 1621 and discharged to the outside through the fluid outlet 1623. Further, after the discharge pump 1620 is operated, the air sucked through the air inlet 1625 is discharged through the air outlet, and the discharged air is transferred to the bubble generator 1630 through the tube 1625 a. Therefore, as long as the discharge pump 1620 is operated, a predetermined magnitude of impulsive force is applied to the water in the first region through the bubble generator 1630.
Thus, the particulates collected in the first region 1613 are continuously floating in the water, rather than settling or depositing on the bottom 1611 of the water storage tank 1600. Accordingly, the floating particles and water are transferred to the discharge pump through the fluid inlet pipe 1622 and the fluid inlet 1621 and then discharged to the outside through the fluid outlet 1623, so that the particles and water in the water storage tank 1600 are easily discharged to the outside together. Even though a certain thickness is deposited on the bottom 1611 of the water storage tank 1600, the bubbles and the impact generated by the bubble generator 1630 may break up the particles and float them in the water. In addition, if a plurality of bubble generators 1630 (e.g., three) are disposed in the first region 1613 and spaced apart from each other, it is possible to prevent particles from being deposited or hardened at a specific region within the first region 1613.
Then, on the rear side of the outer wall 1610 of the water storage tank 1600, the circulation pump 1640 sucks water from the second region 1614 and sends the water to the heat exchanger 1650, and the heat exchanger 1650 sends the water to the wet tower 1500. Therefore, the water within the first region 1613 of the water storage tank 1600 naturally flows to the second region 1614 through the filtering part 1617 installed between the firstregion 1613 and the second region 1614. Since the particles floating in the first region 1613 cannot pass through the filtering portion 1617, the second region 1614 is supplied with relatively clean water only. However, the water again falls from the wet tower 1500 to the first region 1613 of the water storage tank 1600 through the lower connection pipe 1514, whereby fine particles in the wet tower 1500 are again collected in the first region 1613 of the water storage tank 1600.
Meanwhile, as described above, the pH sensor measures the acidity of the water within the water storage tank 1600. If the pH measurement indicates that the acidity is beyond a predetermined range, sodium hydroxide is placed into the water storage tank 1600 through the sodium hydroxide inlet 1618. Of course, the sodium hydroxide may be placed into the water storage tank 1600 automatically by mechanical or electrical means or manually by an operator.
As described above, the semiconductor exhaust gas treatment scrubber according to the present invention can safely discharge exhaust gas generated in a semiconductor manufacturing process into the atmosphere after burning and filtering the exhaust gas. Furthermore, the scrubber of the present invention allows the device to be easily maintained and repaired. In addition, according to the scrubber of the present invention, it is possible to reduce clogging of the device caused by the filtered particles being mixed into the device during the precipitation/deposition of the particles after the combustion of the exhaust gas.
According to the burner of the semiconductor exhaust gas treatment scrubber of the present invention, the mixing of fuel and oxygen can be simplified to prevent the mixed gas of fuel and oxygen from being mixed with the exhaust gas and to prevent the mutual mixing between the exhaust gas flows before the combustion of the exhaust gas, so that the efficiency of the combustionof the exhaust gas can be improved.
According to the combustion chamber of the semiconductor exhaust gas treatment scrubber and the particulate removal device installed in the combustion chamber of the present invention, an inert gas (e.g., nitrogen gas) is supplied to the inside of the combustion chamber in the form of pulses, so that the inert gas provides a predetermined amount of momentum to the inner wall of the combustion chamber, whereby the deposition of particulates on the inner wall of the combustion chamber can be prevented.
According to the present invention, a plurality of nozzles for injecting inert gas are provided in the following manner: spaced apart from each other and inclined at a predetermined angle with respect to the vertical direction of the combustion chamber so that the inert gas is naturally supplied into the combustion chamber in a swirling manner. Therefore, the particles can be more effectively removed and separated from the inner wall of the combustion chamber. In fact, by means of the inert gas supply according to the invention it is possible to ensure that the cleaning cycle of the combustion chamber is extended from once every three to four days to once every three to four months.
Further, according to the present invention, the inert gas may be supplied to the inside of the combustion chamber in various ways, and thus, unnecessary waste of the inert gas may be avoided. For example, if the exhaust gas introduced into the combustion chamber contains a large amount of silicon, the inert gas is continuously supplied in a pulse form during the operation of the burner, and if the exhaust gas contains a small amount of silicon, the inert gas is supplied intermittently for a predetermined period of time or only when the pressure in the combustion chamber approaches the atmospheric pressure, whereby the use of the inert gas is minimized.
According to the wet tower of the semiconductor exhaust gas treatment scrubber of the present invention, the positions of the first tower and the second tower may be interchanged, or the positions of the third tower and the fourth tower may be interchanged, whereby the wet tower can be operated while selectively changing the wet tower in various forms depending on the treatment conditions and the plant conditions.
For this purpose, the desired column can be selected from the wet column and separated off. Thereby, a desired tower can be selectively cleaned, and thus, the time required for cleaning can be greatly reduced.
According to the present invention, if the internal pressure is raised due to the clogging of the filter and the impact plate by the particles, the inert gas having a predetermined pressure is forcibly supplied downward through the gas supply pipe, and thus, the clogging phenomenon caused by the particles can be eliminated or reduced and the cleaning cycle can be extended.
To this end, according to the present invention, water may be simultaneously sprayed toward the first filter installed in the first tower through the first nozzle disposed above the first filter and the second nozzle disposed below the first nozzle, thereby minimizing the amount of particles deposited or accumulated on the first filter. Of course, with this solution, the cleaning cycle can be further extended.
Furthermore, according to the present invention, the first and second towers are provided with first and second transparent windows so that the first and second filters of the first and second towers can be visually seen. Thus, the time required to clean the first and second filters can be accurately judged.
According to the present invention, the water storage tank of the semiconductor exhaust gas treatment scrubberand the particulate removal device installed therein periodically generate air bubbles in the water storage tank. Therefore, the particles cannot be deposited on the bottom of the water storage tank. Further, even if the particles have been deposited or accumulated on the bottom of the water storage tank, the particles may be crushed by the air bubbles and floated in the water, and then the particles may be discharged to the outside together with the water when the discharge pump is operated. By this operation, the maintenance and repair or cleaning cycle of the water storage tank can be also extended.
Further, according to the present invention, air wasted in the operation of the discharge pump can be reused without adding any mechanism or instrument, and thus, the manufacturing cost is not additionally increased.
Although the preferred embodiments of the present invention have been described for illustrative purposes, those skilled in the art will appreciate that: various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims.

Claims (46)

1. A scrubber for treating semiconductor off-gas, comprising:
a supply section for supplying semiconductor off-gas, fuel and oxygen;
a burner connected to the supply portion to burn the semiconductor waste gas by a flame;
a combustion chamber coupled to the burner such that particles generated when the semiconductor exhaust gas is combusted fall;
a wet tower installed at a side of the combustion chamber such that the fine particles transferred from the combustion chamber fall after being adsorbed with water; and
a water storage tank connected to the combustion chamber and the wet tower to collect particles falling from the combustion chamber and the wet tower.
2. The scrubber of claim 1 further comprising a chamber support portion disposed below the lower end of said combustion chamber for supporting said combustion chamber.
3. The scrubber as recited in claim 1, wherein the supply section comprises:
at least one exhaust gas supply pipe connected to the burner to supply the semiconductor exhaust gas to the burner;
at least one bypass exhaust gas supply pipe connected to the exhaust gas supply pipe to bypass the semiconductor exhaust gas;
at least one fuel supply pipe connected to the burner to supply fuel to the burner; and
at least one oxygen supply tube connected to the burner to supply oxygen to the burner.
4. The scrubber of claim 1, wherein the burner comprises:
a body having at least one semiconductor off-gas supply channel, at least one fuel supply channel, and at least one oxygen supply channel;
a fuel nozzle body fitted on a periphery of the main body so as to form a fuel supply space and a fuel supply nozzle; and
an oxygen nozzle body fitted on the peripheries of the main body and the fuel nozzle body, thereby forming an oxygen supply space and an oxygen supply nozzle; and
an assembly body fitted over peripheries of the main body and the oxygen nozzle body to form a coolant flow space, the assembly body being connected to the combustion chamber.
5. The scrubber of claim 4, wherein the body comprises:
an extension part horizontally and radially outwardly extending from a lower end of the body by a predetermined length and having at least one groove formed on a circumferential surface;
a first flange located above the extension portion, the first flange extending horizontally and radially outward from the body for a length greater than the extension length of the extension portion; and
a second flange located above the first flange, the second flange extending horizontally and radially outward from the body for a length greater than the extended length of the first flange; and also
Wherein at least one semiconductor exhaust gas supply passage extends substantially vertically through the body, the at least one fuel supply passage extends vertically through the body such that an outlet of the fuel supply passage is formed between the extension and the first flange, and the at least one oxygen supply passage extends vertically through the body such that an outlet of the oxygen supply passage is formed between the first flange and the second flange.
6. The scrubber of claim 5 wherein the grooves formed in the body are sloped in the following manner: a virtual extension line of a lower end thereof intersects a central axis of the main body, and wherein the main body is in close contact with the fuel nozzle body, whereby the groove forms a fuel nozzle, and the fuel nozzle body is in close contact with the extension and the first flange, whereby a fuel space is formed between the main body and the fuel nozzle body.
7. The scrubber of claim 6, wherein the fuel nozzle body comprises:
a central holeformed through a central portion of the fuel nozzle body, the body being fitted into the hole; and
an extension portion formed around a lower end of a circumferential surface of the fuel nozzle body and extending a predetermined length in a radial direction, wherein at least one groove is formed on a circumferential surface of the extension portion.
8. The scrubber as recited in claim 7, wherein the at least one groove formed on the extended portion of the fuel nozzle body is inclined at an angle that is greater than an inclination angle of the groove formed on the extended portion of the body, the fuel nozzle body is in close contact with the oxygen nozzle body, whereby the at least one groove on the extended portion of the fuel nozzle body forms at least one oxygen nozzle and the oxygen nozzle body is in close contact with the second flange of the body and the at least one groove of the fuel nozzle body, whereby one or more oxygen spaces are formed between the first flange and the second flange and between the fuel nozzle body and the oxygen nozzle body.
9. The scrubber of claim 5, wherein the oxygen nozzle body comprises:
a central hole formed through a central portion of the oxygen nozzle body, the fuel nozzle body being fitted into the hole; and
an extension portion formed around a lower end of a circumferential surface of the oxygen nozzle body and extending outward in a radial direction by a predetermined length.
10. The scrubber as recited in claim 9, wherein the assembly body includes a central hole formed through a central portion of the assembly body, the oxygen nozzle body being fitted into the hole and forming a coolant flow space between anouter circumferential surface of the oxygen nozzle body and an inner circumferential surface of the assembly body, a coolant pipe being connected to the coolant flow space.
11. The scrubber of claim 5, wherein the body has: an inverted conical surface, the apex of which forms the lower end of the body; and a blocking wall extending downward a predetermined length around the tapered surface.
12. The scrubber of claim 1, wherein the combustion chamber comprises:
a top cover, into the central part of which the burner is fitted;
an inner chamber depending from the underside of the top cover about the burner; and
an outer chamber depending from the underside of the top cover about the inner chamber.
13. The scrubber as recited in claim 12, wherein a cooling pipe is provided in a space between the top cover and the outer chamber to supply the coolant, and at least one through-hole is formed in the cooling pipe so that the coolant is injected into the space between the inner chamber and the outer chamber.
14. The scrubber of claim 12 wherein the inner chamber comprises an upper inner chamber and a lower inner chamber that are detachable from each other and the outer chamber also comprises an upper outer chamber and a lower outer chamber that are detachable from each other.
15. The scrubber of claim 12, wherein the combustion chamber comprises:
a pilot through the outer and inner chambers at a lower end of the burner for initial ignition; and
an ultraviolet sensor through the outer and inner chambers at the lower end of the burner to detect whether initial ignition is successfully achieved.
16. The scrubber as recited in claim 12, wherein the combustion chamber further comprises a particle removing gas supply part supplying gas having a predetermined pressure so that particles do not accumulate on an inner wall of the combustion chamber.
17. The scrubber as recited in claim 16 wherein the particulate removing gas supply section comprises:
a gas supply pipe coupled to an outside of the combustion chamber dome;
a gas pipe connected to the gas supply pipe, the gas pipe being formed in a ring shape along a space between the top cover and the inner chamber; and
at least one gas nozzle coupled to the gas pipe and extending a predetermined length in the inner chamber.
18. The scrubber of claim 17, wherein the gas nozzle comprises:
a straight portion extending parallel to an inner wall of the combustion chamber; and
and a curved portion curved from an end of the straight portion toward an inner wall of the combustion chamber, whereby the gas can supply an impulse to the inner wall of the combustion chamber.
19. The scrubber of claim 17 wherein there are four gas nozzles arranged centered about the center of the inner chamber and spaced at 90 degree angular intervals from each other.
20. The scrubber of claim 17 wherein the gas nozzle is inclined with respect to the vertical of the inner chamber so that gas can be supplied in a swirling manner in the inner chamber.
21. The scrubber as recited in claim 17 wherein the gas supplied through the particulate removing gas supply section is an inert gas.
22. The scrubber as recited in claim 17 wherein the gas supplied through the particulate removing gas supply section is supplied in pulses.
23. The scrubber as recited in claim 17, wherein a substantially funnel-shaped lower chamber is detachably attached to a lower portion of the outer chamber of the combustion chamber, and a particle guide member is incorporated inside the lower chamber, the guide chamber being funneled toward a lower end of the lower chamber for guiding particles generated after the combustion of the exhaust gas to the wet tower and the water tank.
24. The scrubber as recited in claim 23 wherein the particulate guide member further comprises an inert gas pipe for injecting an inert gas so as to prevent the vapor generated in the water storage tank from being introduced into the combustion chamber.
25. The scrubber of claim 23 wherein the lower chamber is provided with a chamber support portion for supporting the combustion chamber and separating the combustion chamber.
26. The scrubber of claim 25 wherein the chamber support section comprises:
a pair of guide rails linearly installed on the support plate;
a pair of guide blocks mounted on the guide rail to be capable of reciprocating in a horizontal direction;
a pair of support tables mounted on the guide blocks and extending upward a predetermined distance, each of the support tables having a horizontal surface formed on a top of the support table and a descending surface extending downward from the horizontal surface at a predetermined angle; and
one or more support rods interconnecting the support tables, the lower chamber being provided with rolling bodies mounted to be slidable along a horizontal or descending surface of the support tables.
27. The scrubber as recited in claim 1 wherein the wet tower comprises:
a cylindrical base tower having a base nozzle;
a cylindrical first tower removably mounted on top of the foundation tower, within which first filter and first nozzle are disposed;
a cylindrical second tower removably mounted on top of the first tower, within which second tower a second filter and a second nozzle are disposed;
a cylindrical third tower removably mounted on top of the second tower, within which third filter and third nozzle are disposed; and
a cylindrical fourth column removably mounted on top of the third column, within which a gas supply pipe and a plurality of impingement plates are disposed,
wherein the first and second towers can be assembled in different orders, and the third and fourth towers can also be assembled in different orders.
28. The scrubber as recited in claim 27 wherein the height and diameter of the first and second towers are the same as each other and the height and diameter of the third and fourth towers are the same as each other and the diameter of the first and second towers is different than the diameter of the third and fourth towers.
29. The scrubber of claim 27 wherein the first, second and third filters have decreasing porosities in the order of first, second and third filters.
30. The scrubber as recited in claim 27 wherein fresh water is supplied through the base nozzle and water purified by the water storage tank is supplied through the first, second and third nozzles.
31. The scrubber as claimed in claim 27, wherein a top open cover is fitted on the top of the fourth tower, a first discharge pipe having a pressure sensing port, a temperature sensing port and a cooling air supply port is connected to the cover, and a second discharge pipe is connected to the top end of the first discharge pipe, the second discharge pipe having a discharge amount control member so that the discharge amount can be controlled.
32. The scrubber as claimed in claim 27 wherein the base tower is connected to the combustion chamber and the water storage tank by an intermediate connection pipe and a lower connection pipe, and the base nozzle is provided to spray water upwardly toward a first filter installed in the first tower.
33. The scrubber of claim 27 wherein the base tower further comprises a pressure sensing port for sensing pressure in the base tower.
34. The scrubber of claim 27 wherein the first nozzle of the first tower is positioned above the first filter in a manner to spray water downwardly toward the first filter.
35. The scrubber of claim 27 wherein the first tower further comprises a transparent first window formed in a wall of the first tower such that a first filter located within the first tower is visually visible.
36. The scrubber of claim 27 wherein the second nozzles of the second tower are positioned above the second filter in a manner to spray water downwardly toward the second filter.
37. The scrubber of claim 27 wherein the second tower further comprises a transparent second window formed in a wall of the second tower such that a second filter located within the second tower is visually visible.
38. The scrubber of claim 27 wherein the third nozzles of the third tower are positioned above the third filter in a manner to spray water downwardly toward the third filter.
39. The scrubber as claimed in claim 27 wherein the impingement plates of the fourth tower are each formed with a plurality of through holes and the impingement plates are stacked to be spaced apart from each other in a vertical direction, the through holes formed in two adjacent impingement plates are offset from each other, and the gas supply pipe is disposed above the impingement plates in such a manner as to supply the inert gas downwardly toward the impingement plates.
40. The scrubber of claim 1, wherein the water storage tank comprises:
a first region assembled below the combustion chamber and the wet tower to collect water and particles dropped from the combustion chamber and the wet tower;
a second region separated from the first region by a partition and supplying water filtered of particulates from the first region; and
a filter portion disposed between the first and second regions to filter particulates from the water.
41. The scrubber of claim 40 wherein a discharge pump is also connected to the first zone for discharging water and particulates to the exterior.
42. The scrubber as recited in claim 41 wherein the discharge pump has: a fluid inlet and a fluid outlet for sucking and discharging water and particles; an air inlet and an air outlet for supplying air pressure to the discharge pump to operate the discharge pump; and at least one bubble generator connected to the air outlet through a pipe and immersed in the water in the first region of the water storage tank to a predetermined depth.
43. The scrubber of claim 42 wherein the discharge pump is a pneumatic diaphragm pump.
44. The scrubber of claim 42 wherein the bubble generator is a noise reducer for reducing exhaust pump noise.
45. The scrubber as recited in claim 42 wherein the bubble generator generates bubbles in the water storage tank each time air is discharged from the discharge pump, whereby the particles collected in the water continuously float in the water without settling or accumulating on the bottom of the water storage tank.
46. The scrubber as recited in claim 42 wherein an inlet of a circulation pump is connected to the second section of the water storage tank and an outlet of the circulation pump is connected to the wet tower through a heat exchanger.
CN2006101035893A 2005-09-02 2006-07-25 Scrubber for processing semiconductor waste gas Active CN1923342B (en)

Applications Claiming Priority (15)

Application Number Priority Date Filing Date Title
KR10-2005-0081838 2005-09-02
KR1020050081838A KR100623368B1 (en) 2005-09-02 2005-09-02 Direct burn-wet scrubber for semiconductor manufacture equipment
KR1020050081838 2005-09-02
KR1020050082274A KR100623369B1 (en) 2005-09-05 2005-09-05 Burner of a scrubber for a semiconductor manufacture equipment
KR1020050082274 2005-09-05
KR10-2005-0082274 2005-09-05
KR10-2006-0011012 2006-02-06
KR10-2006-0011011 2006-02-06
KR1020060011012A KR100683805B1 (en) 2006-02-06 2006-02-06 Powder drain device of scrubber for processing semiconductor by-product gas
KR1020060011013A KR100669501B1 (en) 2006-02-06 2006-02-06 Wet tower of scrubber for processing semiconductor by-product gas
KR1020060011013 2006-02-06
KR10-2006-0011013 2006-02-06
KR1020060011011A KR100750406B1 (en) 2006-02-06 2006-02-06 Powder removing device of scrubber for processing semiconductor by-product gas
KR1020060011012 2006-02-06
KR1020060011011 2006-02-06

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