CN1893136B - Light radiating semiconductor device and arrangement containing same - Google Patents
Light radiating semiconductor device and arrangement containing same Download PDFInfo
- Publication number
- CN1893136B CN1893136B CN200610101629.0A CN200610101629A CN1893136B CN 1893136 B CN1893136 B CN 1893136B CN 200610101629 A CN200610101629 A CN 200610101629A CN 1893136 B CN1893136 B CN 1893136B
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- semiconductor device
- luminous
- light
- conversion element
- fluorescer
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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Abstract
The invention relates to a light radiating semiconductor device and relevant apparatus. In order to improve the device, the semiconductor main body is provided with a semiconductor multilayer structure which is fit for emitting electromagnetic rays in a first wavelength region comprising rays of ultraviolet, blue and/or green light spectrum range. A luminescence conversion element converts rays of the first wavelength region into rays of a second wavelength region and emits the rays so as to emitting mixed color white light composed of visual rays in the first and second wavelength region from the semiconductor device, wherein the spectrum of the mixed color white light has a maximum relative intensity in the rays of complementary wavelength region formed by blue light and yellow light, and the spectrum extends to at least a wavelength of 700 nm. Thus, the invention makes it possible of mass production with simple process, and also ensuring reproducibility characteristic of the device to a maximum extent.
Description
The application is dividing an application of application number is 200510091728.0, the applying date is on June 26th, 1997, denomination of invention is " semiconductor chip of divergent-ray and the device that comprises this semiconductor chip " application for a patent for invention.
Technical field
The present invention relates to luminous semiconductor device, utilize display unit and the application of this luminous semiconductor device in aircraft cabin of this luminous semiconductor device.
Background technology
Such semiconductor device, for example, have gained some understanding from the DE 38 04 293 of open file.In literary composition, introduced the structure of a kind of electric exciting light-emitting diode or laser diode.In this structure, by a plastic components that is mixed with fluorescigenic change light organic dyestuff, whole emission spectrum of diode transmitting are passed to the larger direction of wavelength.By this measure, make this structure launch the light that another kind is different from the color of light-emitting diode transmitting.By mix different types of dyestuff in plastics, with same light-emitting diode, just can make the light emitting diode construction of the light of transmitting different colours.
In DE-OS 2 347 289, delivered a kind of infrared (IR) solid state lamp, wherein, on the edge of an IR diode, be coated with fluorescer, thereby made the IR ray of this place transmitting be transformed into visible ray.Adopt the object of this measure to be, for the object of controlling, when reducing as small as possible the IR transmitted intensity of diode transmitting, convert wherein as far as possible little a part of ray to visible ray.
In addition, in EP 486 052, delivered a kind of light-emitting diode, wherein, between substrate and one deck active electroluminescent layer, layer of semiconductor optical excitation photosphere is at least set, to towards the light of the first wavelength period of substrate transmitting, be transformed into the light of second wave length section from this active layer, thereby make this light-emitting diode altogether launch the light of various different wave length sections.
In the many rising range of application of light-emitting diode, the display element on Kfz panel board for example, the interior lighting of aircraft and automobile, and in can launching the light emitting diode indicator of panchromatic light, all light-emitting diode is proposed to strict requirement, can produce mixed light, particularly white light.
In JP-07 176 794-A, introduced a kind of planar light source of transmitting white, the front end of a transparent panel therein arranges the light-emitting diode of two transmitting blue lights, to the internal emission light of transparent panel.On a surface in two of transparent panels, two first type surfaces that opposite arranges in opposite directions, scribble the coating of luminescent substance, just can be luminous after it is subject to diode blue-light excited.The blue light wavelength that the light wavelength of luminescent substance transmitting and diode are launched is different.Adopting the element of this known structure to be but difficult to adopt coating in this way can be so that the fluorescent material of light source transmitting equal white light.In addition, the reproducibility in production in enormous quantities has become large problem, because as long as the thickness of fluorescence coating is slightly uneven, for example, for the rough reason of transparent panel, will cause radiative white color to change.
Summary of the invention
According to basic task of the present invention, be: provide a kind of according to the semiconductor chip in the described mode of beginning, can uniform emission secondary colour, can adopt simple process method to produce in enormous quantities, can guarantee to the full extent again the reproducibility feature of device.
According to an aspect of the present invention, provide a kind of luminous semiconductor device, it comprises: a semiconductor body, and it launches electromagnetic radiation when described semiconductor device work; At least one first and at least one second electrical lead, it is connected conductively with described semiconductor body; An and luminescence conversion element that includes at least one fluorescer.Described semiconductor body has a semiconductor multilayer structure, and it is suitable for launching the electromagnetic radiation of the first wavelength period when described semiconductor device work, and the ray of this first wavelength period in ultraviolet, indigo plant and/or green spectral range forms.Described luminescence conversion element is transformed into the ray that comes from described the first wavelength period the ray of the second wave length section that is different from this first wavelength period and this ray is sent, make this semiconductor device launch the secondary colour white light being formed by the visual ray of described the first wavelength period and the visual ray of described second wave length section, the spectrum of wherein said secondary colour white light has the ray in the complementary wavelength section that blue light and gold-tinted form, and described spectrum at least extends to the wavelength up to 700nm.
According to another aspect of the present invention, provide a kind of aircraft cabin interior lighting, wherein adopt the semiconductor chip of described divergent-ray.
According to a further aspect of the invention, provide a kind of display unit, it comprises a plurality of described semiconductor chips, be arranged to the to throw light on demonstration of this display unit of described semiconductor chip.
According to a further aspect of the invention, provide a kind of full color LED display unit, comprise the semiconductor chip of a plurality of described divergent-rays.
The emitting semiconductor main body having according to regulation of the present invention is a kind of sandwich construction, particularly by a kind of Ga that uses
xi
1-xn or Ga
xal
1-xthe active semi-conductor sandwich construction that N makes, when semiconductor device is worked, launches a kind of electromagnetic radiation of the first wavelength period consisting of ultraviolet, indigo plant and/or green glow spectral coverage.Luminescence conversion element is transformed to a kind of ray of second wave length section by a part of ray from the long section of first wave according to following manner, the mixed-color light of namely being launched polychrome ray, particularly being consisted of the ray of the first wavelength period and the ray of second wave length section by semiconductor device.In other words, for example luminescence conversion element is that a spectrum segment of only preferentially choosing from the ray of semiconductor body transmitting in the first wavelength period is selected to absorb, and then at the longer wave band of wavelength (in second wave length section), launches.What preferentially select is that the wavelength of launching at semiconductor body is a relative maximum of intensity in λ≤520nm ray, and the wavelength period in the spectrum of being selected to absorb by luminescence conversion element is with sunset in this maximum of intensity.
Employing according to another advantage of the present invention is, some (one or more) can be transformed into a plurality of second wave length sections from the first spectrum segment of the first wavelength period.Thereby also may produce the advantage of the multiple mixture of colours and colour temperature.
The special advantage having according to semiconductor device of the present invention be the wave spectrum that produces by luminous conversion and thus transmitting photochromic do not flow through the keeping within bounds of operating current size of semiconductor body.When the ambient temperature of semiconductor device changes, and when causing thus well-known operating current intensity to produce acute variation, this advantage will have great especially meaning.Particularly a kind of light-emitting diode of take the semiconductor body that GaN is base is very responsive in this respect.
In addition, according to semiconductor device of the present invention, can only need an independent control voltage, thereby also can only need an independent control voltage configuration, so make the required setup fee of the control circuit of semiconductor device rest on very little degree.
According to the version of especially preferentially selecting of the present invention, above semiconductor body or above be provided with a kind of luminous transform layer of partially transparent, namely for the semiconductor body divergent-ray of divergent-ray the luminous transform layer of partially transparent.In order to guarantee that the light of transmitting can have unified color certainly, what preferentially select is that luminous transform layer is made to the structure with such constant thickness, so just there is particularly preferred advantage, make the light of semiconductor body transmitting almost constant for all transmit directions through the path of luminous transform layer.Can reach thus, the light of launching in all directions at semiconductor device is all the light of same color.A kind of according to improve structure, according to another particularly preferred advantage of semiconductor device of the present invention, be, adopt simple method just can reach reproducibility highly, this is significant for a kind of efficient production in enormous quantities.Can be used as the use of luminous transform layer, for example, be mixed with layer of varnish or the resin bed of fluorescer.
The version of preferentially selecting according to another kind of the present invention is the luminescence conversion element of making of the luminous conversion involucrum of partially transparent, this involucrum at least encases a part (sometimes also encasing a part for conductive lead wire) for semiconductor body, and as structure involucrum (shell), uses simultaneously.The advantage of a kind of semiconductor device of form is mainly according to this configuration, can follow and use manufacture the habitual production line of light-emitting diode (for example radially light-emitting diode) when carrying out this manufacture.The structural elements of involucrum is to replace general-purpose diode transparent plastic used with the material of luminous conversion involucrum.
Employing is during according to other favourable versions of semiconductor device of the present invention and above-mentioned two version of preferentially selecting, luminous transform layer or luminous conversion involucrum are the transparent materials that is at least mixed with a kind of fluorescer with a kind of, plastics for example, preferentially selecting is epoxy resin (the following stated is shown in by plastics and the fluorescer preferentially selected).While adopting in this way, to adopt the manufacturing cost of luminescence conversion element the most economical.Manufacturing process used does not compare and can separately add a large sum of expense with the production line of light-emitting diode for this reason.
Adopt the improvement structure of especially preferentially selecting of of the present invention or said structure form to need in advance to consider, the wavelength of this wavelength period or second wave length section will be far longer than the wavelength of the first wavelength period.
To consider especially, complimentary to one another between second spectrum segment of the first wavelength period and a second wave length section.Adopt such way, can, from a unified colored light sources, particularly from the semiconductor body of a unified blue light-emitting, produce mixed light, particularly white light.For example, in order to make the semiconductor body of blue light-emitting produce white light, a part for the ray the blue light spectral coverage from semiconductor body transmitting is transformed into the sodium yellow spectral coverage of blue complementary color.Whereby by selecting suitable luminescence conversion element, particularly by selecting granularity, the concentration of suitable fluorescer, fluorescer, change colour temperature or the color bits of white light.In addition, this structure also helps provides a kind of possibility, adopts the possibility of mixing fluorescer, thereby can be conducive to hue adjustment to point-device degree.So same, for example, by means of fluorescer uneven distribution, make luminescence conversion element that inhomogeneous structure occur.By above-mentioned measure, can be conducive to the different length through luminescence conversion element path for light and compensate.
By the version of the semiconductor device preferentially selected according to the present invention, make other members in luminescence conversion element or member involucrum can be with adaptive with one or more dyestuffs, and don't can exert an influence to wavelength conversion.Can use the habitual dyestuff of general-purpose diode, for example azo dyes, anthraquinone dye or perinaphthenone (Perinon) dyestuff for this reason.
In order to prevent that luminescence conversion element is subject to the impact of too high radiation dose, by the favourable transformation for semiconductor device, or by the above-mentioned version of preferentially selecting, part surface to major general's semiconductor body adopts, for example plastic transparent outer cover encases, and is coated with in its surface luminous transform layer, so as to reduce luminescence conversion element radiodensity, then reduce its radiation dose, according to the difference of material therefor, to producing desirable influence the useful life of luminescence conversion element.
In by measure and version thereof of especially preferentially selecting of the present invention, adopt a kind of semiconductor body of launching such ray, the wavelength of emission spectrum of transmitting between 420nm and 460nm, particularly at 430nm place (for example, with Ga
xal
1-xn is basic semiconductor body), or at 450nm place (for example, with Ga
xin
1-xn is basic semiconductor body) there is a maximum of intensity.Adopt like this according to semiconductor device of the present invention, be just conducive to produce nearly all color and secondary colour in C.I.E. color table.Herein the semiconductor body of divergent-ray be with as listed above be mainly to use electroluminescence semi-conducting material, but also can be with a kind of other electroluminescent fluorescent agent, for example polymeric material is made.
During in the improvement structure that other are especially preferentially selected of the present invention and in its version, luminous conversion involucrum or luminous transform layer are made with a kind of varnish or plastics, for example, be to make by a kind of silicones, thermoplastics or thermoset plastic material (epoxy resin and acrylic resin) swashing in device involucrum at light.For example can also make top lid member with thermoplastics, as the use of luminous conversion involucrum.Above listed material can adopt simple method to mix one or more fluorescers.
In semiconductor body being arranged on to a breach, or among a prefabricated shell, and when indentation, there covers with a top cover that scribbles luminous transform layer, just can realize especially simply according to semiconductor device of the present invention.A kind of semiconductor device like this can be manufactured in enormous quantities on common production line.To this, must do only just among this shell, install semiconductor body after on shell, install again, the cladding element of for example making of layer of varnish or casting resin layer, or cover the prefabricated cover plate of making of thermoplastics.Also can use the shell breach of transparent material instead, for example, use transparent plastic packing, the special like this wavelength that can not change from the light of semiconductor body transmitting; If be ready, can also make in advance luminous mapped structure.
For the reason especially easily realizing, the improvement structure according to semiconductor device of the present invention of especially preferentially selecting be by semiconductor body be arranged on one prefabricated or already installed in the shell of lead frame, and shell is filled up with at least part of transparent casting resin, before cast breach, mix in advance fluorescer.Owing to pouring into a mould semiconductor body by the castable that is mixed with fluorescer, just wait that to have the material that the luminous semiconductor device of luminescence conversion element preferentially selects be the epoxy resin that is mixed with one or more fluorescers.Also can adopt polymethyl methacrylate (PMMA) substituted epoxy resin.
Can in PMMA, be mixed with organic dye by simple mode.Want to manufacture transmitting green, yellow and red, according to semiconductor device of the present invention, can use, the dye molecule that the perinaphthene alkene (Perylen) of for example take is base.Can also manufacture by mixing the metal-organic method of 4f the semiconductor device of transmitting UV, visible or infrared light.Particularly by mixing Eu
3+for the metal organic chelate (λ ≈ 620nm) of base can realize red-emitting, according to semiconductor device of the present invention.Red-emitting, according to semiconductor device of the present invention, semiconductor body that particularly launch blue light, can be mixed with in advance Ti by mixing the sapphire chelate of 4f or mixing
+ 3the method manufacture that mixes of sapphire.
Adopt so a kind of mode be conducive to manufacture transmitting white light according to semiconductor body of the present invention, by suitably selecting fluorescer the blue light of being launched by semiconductor body to be transformed into the wave band of complementary color, blue and yellow wave band or be transformed into stack three coloured light, for example blue, green and ruddiness particularly.So just can produce gold-tinted by fluorescer, or produce green glow and ruddiness.Consequent white color (tone in CIE-color table) can be by suitably selecting dyestuff and the concentration change thereof that mixes use.
Be suitable for doing transmitting white, according to the fluorescer of semiconductor device by using of the present invention, be the perinaphthene alkene fluorescer of BASF Lumogen F083, the BASF Lumogen F240 that Yellow light-emitting low temperature is used that for example green light is used, BASF Lumogen F 300 1 classes of the use that glows.These fluorescers can adopt simple mode to mix, for example, in transparent resin.
A kind of method of preferentially selecting that semiconductor body that utilizes blue light-emitting is manufactured the semiconductor device of green light is with the UO in borosilicate glass displacement luminescence conversion element
2 ++.
Employing is for according to semiconductor device of the present invention and to carry out the improved improvement structure that another is preferentially selected for the structure of above-mentioned favourable version be to mix in addition the optical scatter that is referred to as diffusant in other transmission components of luminescence conversion element or structure involucrum.By this way, can be conducive to make the coloring of semiconductor device and emissivity to reach optimization.
According to a kind of particularly advantageous version of semiconductor device of the present invention, be to mix a kind of inorganic fluorescer at least a portion transparent epoxy resin of luminescence conversion element.Best method namely adopts straightforward procedure to make inorganic fluorescer and epoxy resin form compound.A kind of inorganic fluorescer that especially preferentially select, that be used for manufacturing the semiconductor device emit white light is phosphorus YAG:Ce (Y
3al
5o
12: Ce
3+).This fluorescer can adopt simple especially method to mix mutually with transparent epoxy resin habitual in LED technique.Other can be considered as the garnet that has doped with rare-earth elements that fluorescer is used, as Y
3ga
5o
12: Ce
3+, Y (Al, Ga)
5o
12: Ce
3+, Y (Al, Ga)
5o
12: Tb
3+and the sulfide of alkaline-earth metal that is mixed with rare earth element is as SrS:Ce
3+, Na, SrS:Ce
3+, C1, SrS:CeCl
3, CaS:Ce
3+and SrSe:Ce
3+.
In addition, be mixed with the thiogallate of rare earth element, for example CaGa
2s
4: Ce
3+, SrGa
2s
4: Ce
3+be particularly suitable for generating dissimilar mixed-color light.Also can consider to use the aluminate that is mixed with rare earth element, for example YAlO
3: Ce
3+, YGaO
3: Ce
3+, Y (Al, Ga) O
3: Ce
3+and the orthosilicate M that is mixed with rare earth element
2siO
5: Ce
3+(M:Sc, Y, Sc) be Y for example
2siO
5ce
3+.The compound of all yttriums can substitute with scandium or lanthanum in principle.
Another one can with the version according to semiconductor device of the present invention be the luminescence component that at least adopts the involucrum that pure inorganic material makes, that is to say, be luminous conversion involucrum or the luminous transform layer that adopts pure inorganic material to make.Therefore, luminescence conversion element is in to the material of the transparent or partially transparent of temperature stabilization, to mix inorganic fluorescer and make with a kind of.Particularly use a kind of favourable method for example, in the unorganic glass (silex glass) of low melting glass, to mix that a kind of Phos makes.A kind of method of preferentially selecting of manufacturing so luminous transform layer is Sol-Gel-technology, and adopting this technique is by whole luminous transform layer, is not only the material that inorganic fluorescer also mixes to some extent and can in a procedure, carries out.
In order to improve mixing of the ray of first wavelength period of being launched by semiconductor body and the ray of the second wave length section of the luminous conversion of process, and radiative Color uniformity, to according to semiconductor device of the present invention, adopt favourable measure, in luminous involucrum or luminous transform layer and/or mix in addition a kind of dyestuff of blue light-emitting in other elements of structure involucrum, so as to reducing the alleged orientation characteristic by semiconductor body divergent-ray.Orientation characteristic is to instigate the ray of semiconductor body transmitting to present a kind of transmit direction of preferentially selecting.
In a kind of measure of preferentially selecting according to of semiconductor device of the present invention, adopt inorganic fluorescer powder to achieve the above object, fluorescer now can not dissolve in its material (substrate) around.In addition, the refractive index of inorganic fluorescer and its material is around different.So just increased a favourable part, the part of the light not absorbed by fluorescer can not be subject to keeping within bounds of fluorescer granularity and produce scattering.Will greatly reduce the orientation characteristic of semiconductor body divergent-ray like this, thereby make the ray of unabsorbed ray and the luminous conversion of process be able to even mixing, result causes producing three-dimensional evenly look and presses.
Owing to manufacturing luminous conversion involucrum or luminous transform layer epoxy resin and inorganic fluorescer (Y used
3al
5o
12: Ce
3+) mix mutually, so a kind of transmitting white, according to semiconductor device of the present invention, can realize in particularly preferred mode.A part for the blue beam of being launched by semiconductor body is displaced to yellow spectrum segment by inorganic fluorescer, thereby is pushed to and blue complementary wavelength period.By the melting concn of suitable selection dyestuff, can change the tone (color bits in CIE color table) of white light.
Inorganic fluorescer YAG:Ce also has an other advantage, can become therefrom a kind of refractive index at the insoluble pigment (granularity is in 10 μ m) of 1.84 left and right.Except wavelength converts, also can produce a kind of scattering effect like this, result causes making the ray of diode and the gold-tinted of process conversion transmitting of launching blue light to carry out good mixing.
Another according to the improvement structure of preferentially selecting of semiconductor device of the present invention in, and in above-mentioned favourable version, to other a member that sees through ray of luminescence conversion element or structure involucrum, increase and be mixed with the optical scatter that is called diffusant in addition.Adopt such way, be conducive to the further optimization of look pressure and semiconductor device emitting performance.
Special good advantage is, according to the semiconductor device of transmitting white of the present invention and said structure form thereof, mainly take the luminous efficiency of semiconductor body and the luminous efficiency of an incandescent lamp bulb of the blue light-emitting that GaN makes as base has comparativity.Its reason is, the outside quantum output variable of this semiconductor body only has a few percent, and on the other hand the luminous efficiency of organic dye molecule through being everlasting more than 90%.In addition, according to semiconductor device of the present invention, compare with incandescent lamp bulb, its in useful life speciality, very solid, operating voltage is less.
Favourable part is in addition, because the sensitivity of naked eyes is along with the increase of wavelength is increased, so human eye for according to the resolution capability of semiconductor device brightness of the present invention with for being unkitted comparing of luminescence conversion element, although semiconductor device is equally all housed, but can obviously improves for the former.
In addition, according to the favourable part of the principle of the invention, be also except transmitting ultraviolet rays, also can launch visible ray when a semiconductor body instead.Therefore can make the brightness of the light of semiconductor body transmitting obviously improve.
The said concept that makes semiconductor body launch blue light by luminous conversion can also be conducive to utilize multi-stage light emitting inverting element to be expanded according to ultraviolet → indigo plant → green → Huang → red order herein.Now, after semiconductor body, according to sequencing, the luminescence conversion element of multiple spectrum being selected to transmitting is set.
Can also adopt and in a beneficial way multiple different spectrum be selected the dye molecule of transmitting to mix in the lump among the transparent plastic of luminescence conversion element.So just can produce very wide coloured light spectrum.
Special use YAG:Ce do luminous conversion dyestuff, according to the special benefits of the semiconductor device of transmitting white of the present invention, be, this fluorescer is subject to the passing that blue-light excited meeting produces about 100nm between the absorption of spectrum and transmitting.This can cause the back suction that greatly reduces the light of launching for fluorescer to be received, and result causes the raising of luminous efficiency.In addition, YAG:Ce has (for example UV-) high stability (being mainly higher than organic fluorescence agent) of favourable light and heat chemistry, so be suitable for the diode emitting white light that is manufactured on open air and uses in high temperature section.
Up to now, YAG:Ce is being obviously the most applicable a kind of fluorescer aspect back suction receipts, optical efficiency, photochemical stability and manufacture processing.And it is believed that can also for being mixed with the phosphorus of Ce, the garnet that is particularly mixed with Ce uses.
According to the present invention be particularly advantageously to be particularly suitable for the power consumption that full color LED shows little, be suitable in Kfz car or aircraft cabin intraoral illumination and using in the display unit of Kfz panel board etc. or the illumination of liquid crystal display.
Accompanying drawing explanation
The explanation in conjunction with Fig. 1 to 14 referring to following 9 embodiment according to other features of the present invention, advantage and practicality.
Fig. 1 is according to the constructed profile of semiconductor device the first embodiment of the present invention;
Fig. 2 is according to the constructed profile of semiconductor device the second embodiment of the present invention;
Fig. 3 is according to the constructed profile of semiconductor device of the present invention the 3rd embodiment;
Fig. 4 is according to the constructed profile of semiconductor device of the present invention the 4th embodiment;
Fig. 5 is according to the constructed profile of semiconductor device of the present invention the 5th embodiment;
Fig. 6 is according to the constructed profile of semiconductor device of the present invention the 6th embodiment;
Fig. 7 has to take the emission spectrum schematic diagram of semiconductor body of a transmitting blue light of the sandwich construction that GaN is base;
Fig. 8 is the emission spectrum schematic diagram according to the semiconductor device of two transmitting whites of the present invention;
Fig. 9 is the generalized section of the semiconductor body of transmitting blue light;
Figure 10 is according to the constructed profile of semiconductor device of the present invention the 7th embodiment;
Figure 11 be transmitting mix ruddiness according to the emission spectrum schematic diagram of semiconductor device of the present invention;
Figure 12 be transmitting white according to other the emission spectrum schematic diagram of semiconductor device of the present invention;
Figure 13 is according to the constructed profile of semiconductor device of the present invention the 8th embodiment;
Figure 14 is according to the constructed profile of semiconductor device of the present invention the 9th embodiment.
Part same or a same purpose in each figure is marked with same label.
Embodiment
Luminous semiconductor device shown in Fig. 1 has a semiconductor body 1, back side contact 11, front contact 12 and the sandwich construction being stacked to by different laminations 7, wherein also has an active area of launching at least one ray (for example ultraviolet, indigo plant or green) in semiconductor device operating state.
It shown in Fig. 9, is the example being suitable for as a kind of sandwich construction 7 of the element in this element and all embodiment introducing afterwards.In figure, one deck is set on the substrate 18 made from SiC and scribbles AlN-or GaN-layer 19, the GaN-layer 20 of one deck n-conducting, the Ga of one deck n-conducting
xal
1-xn-or Ga
xin
1-xgaN-or one deck Ga of N-layer 21, an other n-conducting
xin
1-xthe Ga of N-layer 22, one deck p-conducting
xal
1-xn-layer or Ga
xin
1-xthe sandwich construction of the GaN-layer 24 of N-layer 23 and one deck p-conducting.On a first type surface 25 of GaN-layer 24, and on a first type surface 26 of substrate 18, a metal contact element 27,28 is set respectively, this is to adopt material used in the conductive contact piece of habitual emitting semiconductor technology to make.
Also can adopt according to others skilled in the art and think that other semiconductor bodies that are applicable to are as using according to semiconductor device of the present invention.This is equally applicable to all embodiment of the following stated.
In the embodiment in figure 1, semiconductor body adopts a kind of electrically conducting adhesive, and for example a kind of brazing metal or adhesives are fixed on its bottom surface contact 11 on the first conductive lead wire 2.Front contact 12 adopts a binding metal silk 14 to be connected with second conductive lead wire 3.
A part of line segment of the unappropriated surface of semiconductor body 1 and conductive lead wire 2 and 3 is directly encased with a kind of luminous conversion involucrum 5.This involucrum be preferentially select a kind of in transparent LED, use be mixed with fluorescer 6, preferentially select the transparent plastic (preferentially select be epoxy resin or also can be with polymethyl methacrylate) that is mixed with inorganic fluorescer to make; The device emitting white light is preferentially selected Y
3al
5o
12: Ce
3+(YAG:Ce) blending.
Difference shown in Fig. 2 according to the embodiment of semiconductor component of the present invention and Fig. 1 is, the part line segment of semiconductor body 1 and conductive lead wire 2 and 3 is not with a kind of luminous coversion material but encases with a kind of transparent involucrum 15.This involucrum can not make the beam wavelength of semiconductor body 1 transmitting change; With a kind of, for example habitual epoxy resin or acrylate or another kind of material that can printing opacity in light-emitting diode technique, for example unorganic glass is made.
On this transparent involucrum 15, be coated with the luminous transform layer 4 of one deck, as shown in Figure 2, the whole surface of involucrum 15 encased, also can only encase this surperficial part with luminous transform layer 4.Luminous transform layer 4 remains use, for example, for example, by a kind of transparent plastic that is mixed with fluorescer 6 (epoxy resin, varnish or methyl methacrylate), made.The semiconductor device emitting white light is like this also preferentially to select YAG:Ce as fluorescer.
The distinctive advantage of this embodiment is, the ray of being launched by semiconductor body equates substantially through the path of luminescence conversion element.Erect image is recurrent, and when the accurate tone of the light of being launched by semiconductor device will depend on the length in this path, this length will play the effect of particular importance.
The output coupling of the light sending for the luminous transform layer 4 improving in Fig. 2 can arrange a lentiform nappe 29 (dotting) on a side of this device, and the total reflection of utilizing emitted light in luminous transform layer 4 inside decays in week.This lentiform nappe 29 can, with transparent plastic or glass manufacture, then, for example, be bonded on luminous transform layer 4, or directly be made as the overall structure of the member of luminous transform layer 4.
In the embodiment shown in fig. 3, the first and second lead-in wires the 2, the 3rd, are embedded in pedestal 8 lighttight or prefabricated, that output a breach 9.So-called " prefabricated " refers to, before semiconductor body being arranged on lead-in wire 2, adopts, and for example injection moulding is connected to base 8 finished product structure forming on lead-in wire 2,3 in advance.Base 8 is, for example, by a kind of lighttight plastics, made, and breach 9 is to make at semiconductor body duration of work and be used for the speculum (sometimes by the suitable coating on breach 9 inwalls) of use of the ray that reflection launches according to its shape.Such base 8 is as the use of the conductive plate for the light-emitting diode of mounted thereto.Before semiconductor body is installed, be to adopt, for example injection moulding is installed in base on the conductive strips (lead frame) of conductive lead wire 2,3.
Embodiment in positive print 2 is such, in order to improve the optical coupling that carrys out self-luminous transform layer 4, also a lentiform nappe 29 (dotting) can be set above it herein, is used for the total reflection of decay at the light of luminous transform layer 4 transmittings.This nappe can be used transparent plastic manufacture, be bonded at, for example luminous transform layer 4 above, or and luminous transform layer 4 jointly make an overall structure.
As shown in figure 10, in a kind of version of especially preferentially selecting, a kind of epoxy resin that contains fluorescer of breach 9 use, that is to say it is with a kind of luminous involucrum 5 fillings, form the structure of luminescence conversion element.Just can save in the case a cover plate 17 and/or a lentiform nappe 29.In addition, also have another kind of way as shown in figure 13, for example by the first conductive lead wire 2 by punching press in the scope of semiconductor body 1 with the interior structure that makes a reflective mirror 34, middle for a kind of luminous conversion involucrum 5 fillings.
It shown in Fig. 4, is a kind of radially example of the another kind of manufacture method of diode that is called.In figure, semiconductor body 1 be by, for example welding or bonding method, be fixed among a kind of mirror construction parts 16 that make with the first conductive lead wire 2.The structure of this shell shape is shape habitual in light-emitting diode technique, so no longer elaborate herein.
On this transparent involucrum 15, be coated with the luminous transform layer 4 of one deck.Material used can be still plastics or the unorganic glass adopting in above-described embodiment for this reason, adds the relevant dyestuff at these place row.
The total consisting of semiconductor body 1, a part of conductive lead wire 2,3, transparent involucrum 15 and luminous transform layer 4 directly encases with another kind of transparent involucrum 10.The wavelength that can not make to see through the ray of luminous transform layer 4 transmittings changes.This involucrum remains, for example, adopt transparent epoxy resin habitual in light-emitting diode technique or unorganic glass to make.
Main difference part in embodiment shown in Fig. 5 and Fig. 4 is, the vacant surface of semiconductor body 1 directly encases with a luminous conversion involucrum 5, and then encase with another kind of transparent involucrum 10.In Fig. 5, also as example, draw a semiconductor body 1, another contact-making surface that wherein need not descend edge to make contact but use semiconductor multilayer structure 7 instead is made contact, and the latter utilizes a second connection metal line 14 to be connected with the conductive lead wire 2 or 3 under it.Self-evident, also can replace such semiconductor body 1 with other embodiment that introduce herein.Otherwise, the embodiment in Fig. 5 can certainly be used in the aforementioned embodiment.
Also to for this self-evident situation, be explained herein, also the way of Fig. 5 planform used analogy Fig. 1 embodiment can be made to an Integral luminous conversion involucrum 5, thereby replace the way that the transparent involucrum 10 of luminous conversion involucrum 5 and another is combined with.
In the embodiment of Fig. 6, directly on semiconductor body 1, be coated with the luminous transform layer 4 of one deck (available above listed material).This semiconductor body 1 and the another kind of transparent involucrum 10 of a part of conductive lead wire 2,3 use encase, and the wavelength that can not make to see through the ray of luminous transform layer 4 transmittings changes.This involucrum remains, for example, adopt transparent epoxy resin habitual in light-emitting diode technique or unorganic glass to make.
There is like this luminous transform layer 4 of one deck but there is no the semiconductor body 1 of involucrum certainly to also help to adopt completely shell shape habitual in semiconductor technology (for example SMD shell, radially shell (referring to Fig. 5)).
At the embodiment shown in Figure 14, be according to a semiconductor device of the present invention, a transparent channel member 35 is set on semiconductor body 1, Here it is at one of semiconductor body 1 outside bag groove 36.Groove shape parts 35, for example, make with transparent epoxy resin or unorganic glass, and, for example adopt injection moulding, conductive lead wire 2,3 is encapsulated in and is made together with semiconductor body 1.In such bag groove 36, comprise and scribble one deck and remain the luminous transform layer 4 made from epoxy resin or unorganic glass, be wherein mixed with above listed inorganic fluorescer particle 37.Adopt the advantage of this structure to be, can be to guarantee that structure is very simple, in the manufacture process of semiconductor device, fluorescer can not be gathered in advance and not consider, for example near position semiconductor body.Groove shape parts 35 can certainly be manufactured separately separately, also can use instead, and the way for example covering on semiconductor body 1 is fixed on a casing component.
In the embodiment introducing more than all, in order to make color get involved radiative degree, reach optimization, in order to make itself and luminescence conversion element (luminous conversion involucrum 5 or luminous transform layer 4) suitable, sometimes in transparent involucrum 15 and/or transparent involucrum 10, mix optical scatter, the most advantageously mix diffusant.Example as such diffusant is the filler of mineral, particularly CaF
2, TiO
2, SiO
2, CaCO
3or BaSO
4, or also can use organic pigment.These materials can adopt simple method to mix among above-mentioned plastics.
Shown in Fig. 7,8 and 12, be a kind of emission spectrum (Fig. 7) (luminous maximum is at λ=430nm) of blue light of semiconductor body transmitting or emitting white light of adopting that a kind of such semiconductor body makes, according to the emission spectrum of semiconductor device of the present invention (Fig. 8 and Figure 12).On abscissa, YinmWei unit marks wavelength X respectively; On ordinate, mark respectively a kind of relative electroluminescence (EL) intensity.
Only some is for conversion into the longer wavelength period of wavelength to the ray of being launched by semiconductor body shown in Fig. 7, thereby produces the white light of secondary colour.The curve 30 being represented by dotted lines in Fig. 8 is the emission spectrum according to a kind of semiconductor device of the present invention, and this ray is formed by two kinds of auxiliary wavelength period (Lan Hehuang), total emission be white light.Spectrum in figure about 400 and 430nm between (indigo plant) and about 550 and 580nm between (Huang) there is respectively a maximum.Whole piece curve 31 represents that one according to the emission spectrum of semiconductor device of the present invention, and white is to be mixed by three kinds of wavelength period (by blue, green, the red stack forming three looks).Emission spectrum in figure for example about about 430nm (indigo plant), 500nm left and right (green) and 615nm (red) locate to have respectively a maximum.
The mixed light that transmitting shown in Figure 11 consists of blue light (a kind of maximum of wavelength is at about 470nm) and ruddiness (a kind of maximum of wavelength is in 620nm left and right) in addition according to the emission spectrum of semiconductor device of the present invention.Utilizing emitted light is pressed as magenta total look of human eye.The emission spectrum of herein being launched by semiconductor body is still equivalent to shown in Fig. 7.
Shown in Figure 12, be one that emit white light, according to semiconductor device of the present invention, possess the semiconductor body of emission spectrum shown in transmitting Fig. 7, wherein fluorescer used is YAG:Ce.In the ray of semiconductor body transmitting, only have sub-fraction to be transformed into the longer wavelength period of wavelength, thereby produce mixed white light.The emission spectrum meaning according to semiconductor device of the present invention with the curve 31 to 33 of different dotted lines in Fig. 8.Luminescence conversion element, luminescence conversion element is wherein made with epoxy resin, the YAG:Ce that contains variable concentrations.Respectively between the λ=420nm and λ=430 of blue light spectral coverage, there is a maximum of intensity in each emission spectrum, wherein contain most of emission band of maximum of intensity of a longer wavelength all in sodium yellow spectral coverage between λ=520 of green light spectral coverage and λ=545.In Figure 12 curve, obviously, adopt according to semiconductor device of the present invention as long as simply by changing the concentration of the fluorescer in epoxy resin, just can change the CIE-color bits in white light.
In addition, the garnet, thiogallate, alkaline-earth metal-sulfide, the aluminate that are mixed with Ce directly can also be coated on semiconductor body, will it not be dispersed in epoxy resin or glass.
An other special benefits of above-mentioned inorganic fluorescer is, the concentration of fluorescer in epoxy resin for example can will not be subject to keeping within bounds of solubility as organic fluorescence agent.Thereby do not need with very thick luminescence conversion element.
By above-described embodiment for being surely not confined on these embodiment according to the present invention according to the explanation of semiconductor device of the present invention.In example, be to using light-emitting diode chip for backlight unit or laser diode chip as the example of semiconductor body, it is also understood that into, be for example the polymer LED of the corresponding spectrum of transmitting.
Claims (31)
1. luminous semiconductor device,
Have a semiconductor body (1), it launches electromagnetic radiation when described semiconductor device work,
Have at least one first and at least one second electrical lead (2,3), it is connected conductively with described semiconductor body (1), and
There is a luminescence conversion element that includes at least one fluorescer,
It is characterized in that:
Described semiconductor body (1) has a semiconductor multilayer structure (7), it is suitable for launching the electromagnetic radiation of the first wavelength period when described semiconductor device work, the ray of this first wavelength period in ultraviolet, indigo plant and/or green spectral range forms, and
Described luminescence conversion element is transformed into the ray that comes from described the first wavelength period the ray of the second wave length section that is different from this first wavelength period and this ray is sent, make this semiconductor device launch the secondary colour white light being formed by the visual ray of described the first wavelength period and the visual ray of described second wave length section, the spectrum of wherein said secondary colour white light has the ray in the complementary wavelength section that blue light and gold-tinted form, and described spectrum at least extends to the wavelength up to 700nm.
2. luminous semiconductor device as claimed in claim 1, is characterized in that, the spectrum of described secondary colour white light has relative intensity maximum when wave-length coverage is 400-430nm, and when wave-length coverage is 550-580nm, has relative intensity maximum, or
The spectrum of described secondary colour white light has relative intensity maximum when wave-length coverage is 420-430nm, and when wave-length coverage is 520-545nm, has relative intensity maximum.
3. luminous semiconductor device as claimed in claim 1, it is characterized in that, described luminescence conversion element is transformed into the ray by a plurality of second wave length sections that mutually different spectrum subareas forms by the ray of the first described wavelength period, this semiconductor device is launched send the mixed-color light of the visible electromagnetic radiation of described the first wavelength period and the visible electromagnetic radiation of described second wave length section.
4. as the luminous semiconductor device of one of claim 1-3, it is characterized in that, described second wave length section has at least in part the wavelength that is greater than the first wavelength period and enters.
5. as the luminous semiconductor device of one of claim 1-3, it is characterized in that, from the main launch party of described semiconductor device, look up, described luminescence conversion element is disposed in described semiconductor body (1) afterwards.
6. as the luminous semiconductor device of one of claim 1-3, it is characterized in that, the top of described semiconductor body (1) or above at least one luminous transform layer (4) is set as luminescence conversion element.
7. as the luminous semiconductor device of one of claim 1-3, it is characterized in that, be provided with luminous conversion involucrum (5) as luminescence conversion element, this luminous conversion involucrum surrounds at least a portion of described semiconductor body (1) and the subregion of described conductive lead wire (2,3).
8. as the luminous semiconductor device of one of claim 1-3, it is characterized in that, described semiconductor body (1) is disposed in the breach (9) of light tight base (8), and described breach (9) is equipped with the cover layer with luminous transform layer (4).
9. as the luminous semiconductor device of one of claim 1-3, it is characterized in that, described semiconductor body (1) is disposed in the breach (9) of light tight base (8), and described breach (9) is filled by described luminescence conversion element at least in part.
10. as the luminous semiconductor device of one of claim 1-3, it is characterized in that, described luminescence conversion element comprises a plurality of layers with different wavelength conversion characteristics.
11. as the luminous semiconductor device of one of claim 1-3, it is characterized in that, described the first wavelength period and the described second wave length section of described mixed-color light are positioned at complementary colours spectral region at least in part.
12. as the luminous semiconductor device of one of claim 1-3, it is characterized in that, the first wavelength period of being sent by described semiconductor body and two second wave length sections form stack three looks, makes when this semiconductor device work from this semiconductor device transmitting white.
13. as the luminous semiconductor device of one of claim 1-3, it is characterized in that, described luminescence conversion element (4,5) has inorganic fluorescer (6).
14. as the luminous semiconductor device of claim 13, it is characterized in that, described inorganic fluorescer is to select from a group, and this group has rare earth doped garnet, is mixed with the alkaline earth sulfide of rare earth, is mixed with the thiogallate of rare earth, the orthosilicate that is mixed with the aluminate of rare earth and is mixed with rare earth.
15. as the luminous semiconductor device of claim 13, it is characterized in that, described fluorescer comes from garnet group of Ce doping.
16. as the luminous semiconductor device of claim 13, it is characterized in that, described inorganic fluorescer is YAG:Ce.
17. as the luminous semiconductor device of claim 13, it is characterized in that, described inorganic fluorescer is embedded in the matrix being comprised of thermoplastic material or hard plastics.
18. as the luminous semiconductor device of claim 17, it is characterized in that, described inorganic fluorescer is embedded in the matrix being comprised of epoxy resin or acrylic resin.
19. as the luminous semiconductor device of claim 13, it is characterized in that, described inorganic fluorescer is embedded in the matrix being comprised of low melting point unorganic glass.
20. as the luminous semiconductor device of claim 13, it is characterized in that, described inorganic fluorescer is embedded in the matrix being comprised of silicones.
21. as the luminous semiconductor device of claim 13, it is characterized in that, is mixed with garnet, thiogallate, the alkaline-earth metal-sulfide of Ce, the described inorganic fluorescer of aluminate is directly coated on described semiconductor body (1).
22. as the luminous semiconductor device of claim 13, it is characterized in that, it is the particle mean size of 10 μ m that described inorganic fluorescer has.
23. as the luminous semiconductor device of one of claim 1-3, it is characterized in that, described luminescence conversion element is provided with multiple different organic or inorganic or organic and inorganic fluorescer (6).
24. as the luminous semiconductor device of one of claim 1-3, it is characterized in that, described luminescence conversion element has with the organic or inorganic of wavelength conversion effect or organic and inorganic dyestuff molecule, and described luminescence conversion element has not organic or inorganic or the organic and inorganic dyestuff molecule of bandgap wavelength change action.
25. as the luminous semiconductor device of one of claim 1-3, it is characterized in that, the additional transparent involucrum (10,15) of setting up of described luminescence conversion element or one or described luminescence conversion element and additional transparent involucrum of setting up have the particle of scattered light.
26. as the luminous semiconductor device of one of claim 1-3, it is characterized in that, described luminescence conversion element is furnished with one or more 4 luminous valency metallo-organic compounds.
27. as the luminous semiconductor device of one of claim 1-3, it is characterized in that, described luminescence conversion element or a transparent involucrum (10,15) or described luminescence conversion element and transparent involucrum are provided with the fluorescer of at least one blue light-emitting.
28. luminous semiconductor devices as described in one of claim 1-27 are in the application of full color LED display unit, in the automobile that throws light on or in aircraft cabin and for automobile instrument disk display apparatus or the liquid crystal indicator of throwing light on.
The luminaire of 29. liquid crystal displays, comprises at least one luminous semiconductor device as described in one of claim 1-27.
30. full color LED display unit, comprise a plurality of luminous semiconductor devices as described in one of claim 1-27.
The endo-illuminator of 31. aircraft cabins, comprises a plurality of luminous semiconductor devices as described in one of claim 1-27.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19625622A DE19625622A1 (en) | 1996-06-26 | 1996-06-26 | Light radiating semiconductor constructional element |
| DE19625622.4 | 1996-06-26 | ||
| DE19638667A DE19638667C2 (en) | 1996-09-20 | 1996-09-20 | Mixed-color light-emitting semiconductor component with luminescence conversion element |
| DE19638667.5 | 1996-09-20 |
Related Parent Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100917280A Division CN100565945C (en) | 1996-06-26 | 1997-06-26 | The semiconductor chip of divergent-ray and comprise the device of this semiconductor chip |
| CNB971974020A Division CN1264228C (en) | 1996-06-26 | 1997-06-26 | Light-emitting semi-conductor component with luminescence conversion element |
Publications (2)
| Publication Number | Publication Date |
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| CN1893136A CN1893136A (en) | 2007-01-10 |
| CN1893136B true CN1893136B (en) | 2014-03-12 |
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| CN200610101629.0A Expired - Lifetime CN1893136B (en) | 1996-06-26 | 1997-06-26 | Light radiating semiconductor device and arrangement containing same |
| CNB2006101016572A Expired - Lifetime CN100502066C (en) | 1996-06-26 | 1997-06-26 | Light-radiating semiconductor component with a luminescence conversion element |
| CNB2006101016500A Expired - Lifetime CN100435369C (en) | 1996-06-26 | 1997-06-26 | Light-emitting semiconductor device having radiation converting covering element |
| CNB2005100917308A Expired - Lifetime CN100433382C (en) | 1996-06-26 | 1997-06-26 | Single covering element for semiconductor device outer case and apparatus containing the same |
| CNB2006100999783A Expired - Lifetime CN100557833C (en) | 1996-06-26 | 1997-06-26 | Luminous semiconductor device and the device that contains this luminous semiconductor device |
| CNB2005100917280A Expired - Lifetime CN100565945C (en) | 1996-06-26 | 1997-06-26 | The semiconductor chip of divergent-ray and comprise the device of this semiconductor chip |
| CN200610101860XA Expired - Lifetime CN1917240B (en) | 1996-06-26 | 1997-06-26 | Light-emitting semiconductor device possessing light-emitting conversion element |
| CNB2005100917295A Expired - Lifetime CN100442555C (en) | 1996-06-26 | 1997-06-26 | Light-radiating semiconductor and device containing with the same |
| CNB2006100999800A Expired - Lifetime CN100514684C (en) | 1996-06-26 | 1997-06-26 | Light-emitting semiconductor device and device containing the same |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2006101016572A Expired - Lifetime CN100502066C (en) | 1996-06-26 | 1997-06-26 | Light-radiating semiconductor component with a luminescence conversion element |
| CNB2006101016500A Expired - Lifetime CN100435369C (en) | 1996-06-26 | 1997-06-26 | Light-emitting semiconductor device having radiation converting covering element |
| CNB2005100917308A Expired - Lifetime CN100433382C (en) | 1996-06-26 | 1997-06-26 | Single covering element for semiconductor device outer case and apparatus containing the same |
| CNB2006100999783A Expired - Lifetime CN100557833C (en) | 1996-06-26 | 1997-06-26 | Luminous semiconductor device and the device that contains this luminous semiconductor device |
| CNB2005100917280A Expired - Lifetime CN100565945C (en) | 1996-06-26 | 1997-06-26 | The semiconductor chip of divergent-ray and comprise the device of this semiconductor chip |
| CN200610101860XA Expired - Lifetime CN1917240B (en) | 1996-06-26 | 1997-06-26 | Light-emitting semiconductor device possessing light-emitting conversion element |
| CNB2005100917295A Expired - Lifetime CN100442555C (en) | 1996-06-26 | 1997-06-26 | Light-radiating semiconductor and device containing with the same |
| CNB2006100999800A Expired - Lifetime CN100514684C (en) | 1996-06-26 | 1997-06-26 | Light-emitting semiconductor device and device containing the same |
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| DE (1) | DE19625622A1 (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN1738067A (en) | 2006-02-22 |
| CN100442555C (en) | 2008-12-10 |
| DE19625622A1 (en) | 1998-01-02 |
| CN100557833C (en) | 2009-11-04 |
| CN1893136A (en) | 2007-01-10 |
| CN1913183A (en) | 2007-02-14 |
| CN100514684C (en) | 2009-07-15 |
| CN100435369C (en) | 2008-11-19 |
| CN1881637A (en) | 2006-12-20 |
| CN1905226A (en) | 2007-01-31 |
| CN1722485A (en) | 2006-01-18 |
| CN1722486A (en) | 2006-01-18 |
| CN100502066C (en) | 2009-06-17 |
| CN100565945C (en) | 2009-12-02 |
| CN100433382C (en) | 2008-11-12 |
| CN1917240B (en) | 2012-05-23 |
| CN1983651A (en) | 2007-06-20 |
| CN1917240A (en) | 2007-02-21 |
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