CN100565945C - The semiconductor chip of divergent-ray and comprise the device of this semiconductor chip - Google Patents
The semiconductor chip of divergent-ray and comprise the device of this semiconductor chip Download PDFInfo
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- CN100565945C CN100565945C CNB2005100917280A CN200510091728A CN100565945C CN 100565945 C CN100565945 C CN 100565945C CN B2005100917280 A CNB2005100917280 A CN B2005100917280A CN 200510091728 A CN200510091728 A CN 200510091728A CN 100565945 C CN100565945 C CN 100565945C
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
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Abstract
The present invention relates to a kind of semiconductor chip and the device that comprises this semiconductor chip of divergent-ray, this semiconductor chip has: a semiconductor multilayer structure, and it is suitable for the electromagnetic radiation of emission first wavelength period from ultraviolet, indigo plant and/or green spectral region; A luminous transform layer that contains at least a luminescent material, described luminous transform layer is transformed into the ray of second wavelength period different with first wavelength period with the ray of first wavelength period, comprises the first wavelength period ray and the polychrome ray that comes from the second wavelength period ray of described luminescent material that comes from described semiconductor multilayer structure and pass described luminous transform layer thereby this semiconductor chip is launched.Can adopt the simple process method to produce in enormous quantities thus, can guarantee the reproducibility feature of device again to the full extent.
Description
The application is that application number is 97197402.0, the applying date is on June 26th, 1997, denomination of invention is divided an application for the application for a patent for invention of " luminous semiconductor device with luminous inverting element ".
Technical field
The present invention relates to luminous semiconductor chip, utilize the display unit and the application of this luminous semiconductor chip in aircraft cabin of this luminous semiconductor chip.
Background technology
Such semiconductor device is for example had gained some understanding from the DE 38 04 293 of open file.Introduced the structure of a kind of electric exciting light-emitting diode or laser diode in the literary composition.In this structure, whole emission spectrum of diode emission are passed to the bigger direction of wavelength by a plastic components that is mixed with fluorescigenic change light organic dyestuff.By this measure, make this structure launch the light that another kind is different from the color of light-emitting diode emission.By in plastics, mixing different types of dyestuff, use the light emitting diode construction that just can make the light of emission different colours with a kind of light-emitting diode.
In DE-OS 2 347 289, delivered a kind of infrared (IR) solid state lamp, wherein, on the edge of an IR diode, be coated with luminescent material, thereby made the IR ray of this place emission be transformed into visible light.Adopt the purpose of this measure to be,, in the IR transmitted intensity that reduces the diode emission as small as possible, convert wherein as far as possible little a part of ray to visible light for the purpose of controlling.
In addition, in EP 486 052, delivered a kind of light-emitting diode, wherein, between substrate and one deck active electroluminescent layer, layer of semiconductor optical excitation photosphere is set at least, to be transformed into the light of second wavelength period towards the light of first wavelength period of substrate emission from this active layer, thereby make this light-emitting diode launch the light of various different wave length sections altogether.
In the many rising range of application of light-emitting diode, the display element on the Kfz panel board for example, the interior lighting of aircraft and automobile, and in the light emitting diode indicator that can launch panchromatic light, all strict requirement is proposed light-emitting diode, make it can produce mixed light, particularly white light.
Introduced a kind of planar light source of launching white light in JP-07 176 794-A, the front end of a transparent panel therein is provided with the light-emitting diode of two emission blue lights, to the internal emission light of transparent panel.Scribble the coating of luminescent substance in opposite directions on the surface in two first type surfaces being provided with of opposite two of transparent panels, just can be luminous after it is subjected to diode blue-light excited.The wavelength of the blue light that luminescent substance wavelength of light emitted and diode are launched is different.Adopt the element of this known structure but to be difficult to adopt this mode to be coated with energy so that the fluorescent material of light emitted equal white light.In addition, the reproducibility in production in enormous quantities has become big problem, because as long as the thickness of fluorescence coating is slightly uneven, for example for the rough reason of transparent panel, will cause radiative white color to change.
Summary of the invention
According to basic task of the present invention be: provide a kind of according to the beginning described mode semiconductor chip, can evenly launch secondary colour, can adopt the simple process method to produce in enormous quantities, can guarantee the reproducibility feature of device again to the full extent.
According to an aspect of the present invention, provide a kind of semiconductor chip of divergent-ray, it has: a semiconductor multilayer structure, and it is suitable for the electromagnetic radiation of emission first wavelength period from ultraviolet, indigo plant and/or green spectral region; A luminous transform layer that contains at least a luminescent material, described luminous transform layer is transformed into the ray of second wavelength period different with first wavelength period with the ray of first wavelength period, comprises the first wavelength period ray and the polychrome ray that comes from the second wavelength period ray of described luminescent material that comes from described semiconductor multilayer structure and pass described luminous transform layer thereby this semiconductor chip is launched.
According to another aspect of the present invention, provide a kind of aircraft cabin interior lighting, wherein adopt the semiconductor chip of described divergent-ray.
According to a further aspect of the invention, provide a kind of display unit, it comprises a plurality of described semiconductor chips, be arranged to the to throw light on demonstration of this display unit of described semiconductor chip.
According to a further aspect of the invention, provide a kind of panchromatic LED display unit, comprise the semiconductor chip of a plurality of described divergent-rays.
The emitting semiconductor main body that has according to regulation of the present invention is a kind of sandwich construction, particularly by a kind of Ga that uses
xIn
1-xN or Ga
xAl
1-xThe active semi-conductor sandwich construction that N makes when semiconductor device is worked, is launched a kind of electromagnetic radiation of first wavelength period that is made of ultraviolet, indigo plant and/or green glow spectral coverage.Luminous inverting element will be transformed to a kind of ray of second wavelength period according to following manner from a part of ray of first wavelength period, just by semiconductor device emission polychrome ray, the mixed-color light that particularly is made of the ray of the ray of first wavelength period and second wavelength period.In other words, for example luminous inverting element is that a spectrum segment of only preferentially choosing from the ray of semiconductor body emission in first wavelength period is selected to absorb, and launches at the long wave band (in second wavelength period) of wavelength then.Preferential what select is that wavelength in the semiconductor body emission is a relative maximum of intensity in λ≤520nm ray, and the wavelength period in the spectrum of being selected to absorb by luminous inverting element then is to be in beyond this maximum of intensity.
Employing according to another advantage of the present invention is, some (one or more) can be transformed into a plurality of second wavelength period from first spectrum segment of first wavelength period.Thereby also may produce the advantage of the multiple mixture of colours and colour temperature.
The special advantage that has according to semiconductor device of the present invention be the wave spectrum that produces by luminous conversion and thus emission photochromic do not flow through the keeping within bounds of operating current size of semiconductor body.When the ambient temperature of semiconductor device changes, and when causing well-known operating current intensity to produce acute variation thus, this advantage will have special significant meaning.Particularly a kind of is that the light-emitting diode of semiconductor body of base is very responsive in this respect with GaN.
In addition, can only need an independent control voltage, thereby also can only need an independent control voltage configuration, so make the required setup fee of the control circuit of semiconductor device rest on very little degree according to semiconductor device of the present invention.
In according to the version of especially preferentially selecting for use of the present invention, above semiconductor body or above be provided with a kind of luminous transform layer of partially transparent, just supply the luminous transform layer of partially transparent of usefulness of the semiconductor body divergent-ray of divergent-ray.For the light that guarantees to launch can have unified color certainly, what preferentially select for use is that luminous transform layer is made the structure with such constant thickness, so just have good especially advantage, the path that the light that semiconductor body is launched passes luminous transform layer is almost constant for all transmit directions.Can reach thus, the light of launching on all directions at semiconductor device all is the light of same color.A kind of according to improve structure, be that according to another good especially advantage of semiconductor device of the present invention adopt simple method just can reach reproducibility highly, this is significant for a kind of efficient production in enormous quantities.Can be used as luminous transform layer usefulness be for example to be mixed with the layer of varnish or the resin bed of luminescent material.
The version of preferentially selecting for use according to another kind of the present invention is the luminous inverting element of making of the luminous conversion involucrum of partially transparent, this involucrum encases the part (sometimes also encasing the part of conductive lead wire) of semiconductor body at least, and uses as structure involucrum (shell) simultaneously.The advantage of a kind of semiconductor device of form mainly is according to this configuration, can follow to use when carrying out this make and make the production line that light-emitting diode (for example radially light-emitting diode) is habitually practised.The structural elements of involucrum is the used transparent plastic of material replacement general-purpose diode with luminous conversion involucrum.
Employing is during according to other favourable versions of semiconductor device of the present invention and above-mentioned two versions of preferentially selecting for use, luminous transform layer or luminous conversion involucrum are the transparent materials that is mixed with a kind of luminescent material at least with a kind of, plastics for example, preferentially selecting for use is epoxy resin (plastics and the luminescent material preferentially selected for use are seen the following stated).When adopting this method, the most economical with the manufacturing cost that adopts luminous inverting element.Used for this reason manufacturing process does not compare with the production line of light-emitting diode can add a large sum of expense in addition.
What adopt that the improvement structure of especially preferentially selecting for use of of the present invention or said structure form needs to consider in advance is that the wavelength of this wavelength period or second wavelength period will be far longer than the wavelength of first wavelength period.
What will consider especially is, complimentary to one another between one second spectrum segment of first wavelength period and one second wavelength period.Adopt such way, can be from a unified colored light sources, particularly the semiconductor body from a unified blue light-emitting produces mixed light, particularly white light.For example, the part of the ray from the blue light spectral coverage of semiconductor body emission is transformed into the sodium yellow spectral coverage of blue complementary color for the semiconductor body that makes blue light-emitting produces white light.By selecting suitable luminous inverting element, particularly granularity, concentration for use, change the colour temperature or the color bits of white light whereby by selecting suitable luminescent material, luminescent material for use.In addition, this structure also helps provides a kind of possibility, promptly adopts the possibility of mixed luminescence material, thereby can help tone is adjusted to point-device degree.So same, for example by means of the luminescent material uneven distribution, still can make luminous inverting element that inhomogeneous structure takes place.By above-mentioned measure, the different length that can help passing for light luminous inverting element path compensate.
By the version of the semiconductor device preferentially selected for use according to the present invention, make other members in luminous inverting element or the member involucrum can be, and don't can exert an influence wavelength conversion with adaptive with one or more dyestuffs.Can use the habitual dyestuff of general-purpose diode, for example azo dyes, anthraquinone dye or perinaphthenone (Perinon) dyestuff for this reason.
In order to prevent that luminous inverting element is subjected to the influence of too high radiation dose, by favourable transformation for semiconductor device, perhaps by the above-mentioned version of preferentially selecting for use, adopt on part surface to major general's semiconductor body, for example plastic transparent outer cover encases, and is coated with luminous transform layer in its surface, so as to the radiodensity that reduces luminous inverting element, then reduce its radiation dose, according to the difference of material therefor, to producing desirable influence in useful life of luminous inverting element.
In by measure and version thereof of especially preferentially selecting for use of the present invention, adopt a kind of semiconductor body of launching such ray, promptly the wavelength of emission spectrum emitted between 420nm and 460nm, particularly at the 430nm place (for example with Ga
xAl
1-xN be the basis semiconductor body), perhaps at the 450nm place (for example with Ga
xIn
1-xN is the semiconductor body on basis) maximum of intensity of appearance.Adopt like this, just help producing nearly all color and secondary colour in the C.I.E. color table according to semiconductor device of the present invention.Herein the semiconductor body of divergent-ray be with as listed above mainly be to use the electroluminescence semi-conducting material, but also can be with a kind of other electroluminescent materials, for example polymeric material is made.
During in the improvement structure that other are especially preferentially selected for use of the present invention and in its version, luminous conversion involucrum or luminous transform layer are made with a kind of varnish or plastics, for example are to make with a kind of silicones, thermoplastics or thermoset plastic material (epoxy resin and acrylic acid resin) that swashs in the device involucrum at light.For example can also make top lid member, as the usefulness of luminous conversion involucrum with thermoplastics.Above listed material can adopt simple method to mix one or more luminescent materials.
In semiconductor body being arranged on a breach, or among a prefabricated shell, and when indentation, there covers with a top cover that scribbles luminous transform layer, just can realize especially simply according to semiconductor device of the present invention.A kind of semiconductor device like this can be made on common production line in enormous quantities.Must do this only just among this shell, install semiconductor body after on shell, install again, for example the cladding element of making of layer of varnish or casting resin layer perhaps covers the prefabricated cover plate of making of thermoplastics.Also can use the shell breach of transparent material instead, for example use the transparent plastic packing, the special like this wavelength that can not change from the light of semiconductor body emission; If be ready, can also make luminous mapped structure in advance.
For the reason that realizes especially easily, the improvement structure of especially preferentially selecting for use according to semiconductor device of the present invention be with semiconductor body be arranged on one prefabricated or installed already in the shell of lead frame, and using shell at least, the casting resin of partially transparent fills up, before the cast breach, mix luminescent material in advance.Owing to use the pours be mixed with luminescent material to pour into a mould semiconductor body, the material that just waits luminous semiconductor device with luminous inverting element preferentially to select for use is the epoxy resin that is mixed with one or more luminescent materials.Also can adopt polymethyl methacrylate (PMMA) substituted epoxy resin.
Can in PMMA, be mixed with organic dye by simple mode.Wanting to make transmitting green, yellow and red, can use according to semiconductor device of the present invention, is the dye molecule of base with perinaphthene alkene (Perylen) for example.Can also be by mixing the semiconductor device that the metal-organic method of 4f is made emission UV, visible or infrared light.Particularly by mixing Eu
3+For the metal organic chelate (λ ≈ 620nm) of base can realize red-emitting, according to semiconductor device of the present invention.Red-emitting, can be mixed with Ti in advance by mixing the sapphire chelate of 4f or mixing according to semiconductor device of the present invention, that particularly launch the semiconductor body of blue light
+ 3The method manufacturing that mixes of sapphire.
Adopt so a kind of mode help making the emission white light according to semiconductor body of the present invention, promptly by suitably selecting for use luminescent material will be transformed into the wave band of complementary color by the blue light of semiconductor body emission, particularly blue and yellow wave band or be transformed into stack three coloured light, for example blue, green and ruddiness.So just can produce gold-tinted, perhaps produce green glow and ruddiness by luminescent material.Consequent white color (tone in the CIE-color table) can be by suitably selecting dyestuff and the concentration change thereof that mixes usefulness for use.
Be suitable for doing the emission white light, according to the luminescent material of semiconductor device by using of the present invention be the perinaphthene alkene luminescent material of BASF Lumogen F 300 1 classes of the BASF Lumogen F 083, the BASF Lumogen F240 that jaundice light is used that use of green light, the usefulness that glows for example.These luminescent materials can adopt simple mode to mix, for example in the transparent resin.
The method of preferentially selecting for use that a kind of semiconductor body that utilizes blue light-emitting is made the semiconductor device of green light is to replace UO in the luminous inverting element with borosilicate glass
2 ++
Employing is for according to semiconductor device of the present invention and to carry out the improved improvement structure that another is preferentially selected for use for the structure of above-mentioned favourable version be to mix the optical scatter that is referred to as diffusant in addition in other transmission components of luminous inverting element or structure involucrum.Can help making the coloring of semiconductor device and emissivity to reach optimization by this way.
A kind of particularly advantageous version according to semiconductor device of the present invention is to mix a kind of phosphor at least a portion transparent epoxy resin of luminous inverting element.Best method just adopts straightforward procedure to make phosphor and epoxy resin form compound.A kind of phosphor that especially preferentially select for use, that be used for making the semiconductor device that emits white light is phosphorus YAG:Ce (Y
3Al
5O
12: Ce
3+).This luminescent material can adopt simple especially method to mix mutually with the transparent epoxy resin of habitually practising in LED technology.Other can be considered as the garnet that doped with rare-earth elements is arranged that luminescent material is used, as Y
3Ga
5O
12: Ce
3+, Y (Al, Ga)
5O
12: Ce
3+, Y (Al, Ga)
5O
12: Tb
3+And the sulfide such as the SrS:Ce that are mixed with the alkaline-earth metal of rare earth element
3+, Na, SrS:Ce
3+, Cl, SrS:CeCl
3, CaS:Ce
3+And SrSe:Ce
3+
In addition, be mixed with the thiogallate of rare earth element, for example CaGa
2S
4: Ce
3+, SrGa
2S
4: Ce
3+Be particularly suitable for generating dissimilar mixed-color light.Also can consider to use the aluminate that is mixed with rare earth element, for example YAlO
3: Ce
3+, YGaO
3: Ce
3+, Y (Al, Ga) O
3: Ce
3+And the orthosilicate M that is mixed with rare earth element
2SiO
5: Ce
3+(M:Sc, Y, Sc) Y for example
2SiO
5Ce
3+The compound of all yttriums can substitute with scandium or lanthanum in principle.
Another one can with the version according to semiconductor device of the present invention be to adopt the luminescence component of the involucrum that pure inorganic material makes at least, that is to say, be luminous conversion involucrum or the luminous transform layer that adopts pure inorganic material to make.Therefore, luminous inverting element is to mix phosphor make in the material to the transparent or partially transparent of temperature stabilization with a kind of.Particularly use a kind of advantageous method to mix in the unorganic glass (for example silex glass) of low melting glass that a kind of Phos makes.A kind of method of preferentially selecting for use of making so luminous transform layer is the So1-Ge1-technology, and adopting this technology is with whole luminous transform layer, is not only the material that phosphor also mixes to some extent and can carries out in one procedure.
In order to improve mixing by the ray of the ray of first wavelength period of semiconductor body emission and second wavelength period of passing through luminous conversion, and radiative look uniformity, to in according to semiconductor device of the present invention, adopt favourable measure, in luminous involucrum or luminous transform layer and/or mix a kind of dyestuff of blue light-emitting in other elements of structure involucrum in addition, so as to reducing alleged orientation characteristic by the semiconductor body divergent-ray.Orientation characteristic is to instigate the ray of semiconductor body emission to present a kind of transmit direction of preferentially selecting for use.
In an a kind of measure of preferentially selecting for use according to semiconductor device of the present invention, adopt the phosphor powder to achieve the above object, the luminescent material of this moment can dissolving in the material (substrate) around it.In addition, the refractive index of phosphor and the material around it is different.So just increased a favourable part, promptly the part of the light that is not absorbed by luminescent material can not be subjected to keeping within bounds of luminescent material granularity and produce scattering.Will reduce the orientation characteristic of semiconductor body divergent-ray greatly like this, thereby make the ray of unabsorbed ray and the luminous conversion of process be able to even mixing, the result causes producing three-dimensional evenly look and presses.
Owing to make luminous conversion involucrum or used epoxy resin and the phosphor (Y of luminous transform layer
3Al
5O
12: Ce
3+) mix mutually, so a kind of launch white light, can realize in particularly preferred mode according to semiconductor device of the present invention.Part by the blue beam of semiconductor body emission is displaced to yellow spectrum segment by phosphor, thereby is pushed to the wavelength period with blue complementation.By the melting concn of suitable selection dyestuff, can change the tone (color bits in the CIE color table) of white light.
Phosphor YAG:Ce also has an other advantage, promptly can become a kind of refractive index therefrom at the insoluble pigment about 1.84 (granularity is in 10 μ m).Also can produce a kind of scattering effect like this except wavelength generation conversion, the result causes making the ray of the diode of launching blue light and the gold-tinted of process conversion emission to carry out good mixing.
In another improvement structure of preferentially selecting for use according to semiconductor device of the present invention, and in the above-mentioned favourable version, the member that sees through ray to other one of luminous inverting element or structure involucrum increases in addition and is mixed with the optical scatter that is called diffusant.Adopt such way, help the further optimization of look pressure and semiconductor device emitting performance.
Special good advantage is, launching the semiconductor device of white light and said structure form thereof, main according to the present invention is that the luminous efficiency of semiconductor body of the blue light-emitting made of base and the luminous efficiency of an incandescent lamp bulb have comparativity with GaN.Its reason is that the outside quantum output variable of this semiconductor body has only a few percent, and on the other hand the luminous efficiency of organic dye molecule through being everlasting more than 90%.In addition, compare with incandescent lamp bulb according to semiconductor device of the present invention, its in useful life speciality, very solid, operating voltage is less.
Favourable part in addition is, owing to the sensitivity of naked eyes along with the increase of wavelength is increased, so human eye for according to the resolution capability of semiconductor device brightness of the present invention with for being unkitted comparing of luminous inverting element, although semiconductor device equally all is housed, but can obviously improves for the former.
In addition, the favourable part according to the principle of the invention also is also can make visible emitting into when a semiconductor body except the emission ultraviolet rays.The brightness of the light of semiconductor body emission is obviously improved.
The said herein notion that makes semiconductor body launch blue light by luminous conversion can also help utilizing the multi-stage light emitting inverting element to be expanded according to ultraviolet → indigo plant → green → Huang → red order.At this moment, according to sequencing the luminous inverting element of multiple spectrum being selected emission is set in the semiconductor body back.
The dye molecule that can also adopt favourable mode that multiple different spectrum selection is launched mixes among the transparent plastic of luminous inverting element in the lump.So just can produce very wide coloured light spectrum.
Special use YAG:Ce to make special benefits luminous conversion dyestuff, that launch the semiconductor device of white light according to the present invention to be, this luminescent material is subjected to blue-light excited meeting produces about 100nm between the absorption of spectrum and emission passing.This back suction that can cause reducing the light of launching for luminescent material is greatly received, and the result causes the raising of luminous efficiency.In addition, YAG:Ce has (for example UV-) high stability (mainly being to be higher than luminous organic material) of favourable light and heat chemistry, so be suitable for the diode that emits white light that is manufactured on the open air and uses in high temperature section.
Up to now, YAG:Ce obviously is being a most suitable a kind of luminescent material aspect back suction receipts, optical efficiency, photochemical stability and the manufacturing processing.And it is believed that and to be used for using at the garnet that is mixed with the phosphorus of Ce, particularly be mixed with Ce.
According to the present invention particularly advantageous be to be particularly suitable for the power consumption that panchromatic LED shows little, be suitable in the Kfz car or aircraft cabin intraoral illumination and in the illumination of the display unit of Kfz panel board etc. or liquid crystal display, using.
Description of drawings
According to other features of the present invention, advantage and practicality referring to the explanation of following 9 embodiment in conjunction with Fig. 1 to 14.
Fig. 1 is the constructed profile according to semiconductor device first embodiment of the present invention;
Fig. 2 is the constructed profile according to semiconductor device second embodiment of the present invention;
Fig. 3 is the constructed profile according to semiconductor device the 3rd embodiment of the present invention;
Fig. 4 is the constructed profile according to semiconductor device the 4th embodiment of the present invention;
Fig. 5 is the constructed profile according to semiconductor device the 5th embodiment of the present invention;
Fig. 6 is the constructed profile according to semiconductor device the 6th embodiment of the present invention;
Fig. 7 is an emission spectrum schematic diagram of launching the semiconductor body of blue light that has with GaN a sandwich construction that is base;
Fig. 8 is the emission spectrum schematic diagram according to the semiconductor device of two emission white lights of the present invention;
Fig. 9 is the generalized section of the semiconductor body of emission blue light;
Figure 10 is the constructed profile according to semiconductor device the 7th embodiment of the present invention;
Figure 11 is the emission spectrum schematic diagram according to semiconductor device of the present invention that emission mixes ruddiness;
Figure 12 be the emission white light according to other the emission spectrum schematic diagram of semiconductor device of the present invention;
Figure 13 is the constructed profile according to semiconductor device the 8th embodiment of the present invention;
Figure 14 is the constructed profile according to semiconductor device the 9th embodiment of the present invention.
Part same or a same purpose in each figure is marked with same label.
Embodiment
Luminous semiconductor device shown in Figure 1 has a semiconductor body 1, back side contact 11, a front contact 12 and a sandwich construction 7 that is stacked to by different laminations, wherein also has the active area of an at least a ray of emission (for example ultraviolet, indigo plant or green) in the semiconductor device operating state.
Shown in Figure 9 is the example that is suitable for as a kind of sandwich construction 7 of the element among this element and the embodiment that all are introduced afterwards.Among the figure, one deck is set on the substrate made from SiC 18 scribbles AlN-or GaN-layer 19, the GaN-layer 20 of one deck n-conducting, the Ga of one deck n-conducting
xAl
1-xN-or Ga
xIn
1-xGaN-or one deck Ga of N-layer 21, an other n-conducting
xIn
1-xThe Ga of N-layer 22, one deck p-conducting
xAl
1-xN-layer or Ga
xIn
1-xThe sandwich construction of the GaN-layer 24 of N-layer 23 and one deck p-conducting.On a first type surface 25 of GaN-layer 24, and on a first type surface 26 of substrate 18 a Metal Contact part 27,28 is set respectively, this is that employing used material in the conductive contact piece of habitual emitting semiconductor technology is made.
Also can adopt other semiconductor bodies of thinking to be fit to according to others skilled in the art as using according to semiconductor device of the present invention.This is equally applicable to all embodiment of the following stated.
In the embodiment in figure 1, semiconductor body adopts a kind of electrically conducting adhesive, and for example a kind of brazing metal or adhesives are fixed on its bottom surface contact 11 on first conductive lead wire 2.Front contact 12 adopts a binding metal silk 14 to be connected with one second conductive lead wire 3.
A part of line segment of semiconductor body 1 unappropriated surface and conductive lead wire 2 and 3 is directly encased with a kind of luminous conversion involucrum 5.This involucrum be preferentially select for use a kind of in transparent LED, use be mixed with luminescent material 6, preferentially select for use the transparent plastic that is mixed with phosphor (preferentially select for use be epoxy resin or also can use polymethyl methacrylate) to make; The device that emits white light is preferentially selected Y for use
3Al
5O
12: Ce
3+(YAG:Ce) blending.
Be according to the embodiment of semiconductor component of the present invention and the difference of Fig. 1 that shown in Fig. 2 the part line segment of semiconductor body 1 and conductive lead wire 2 and 3 is not with a kind of luminous coversion material but encases with a kind of transparent involucrum 15.This involucrum can not make the beam wavelength of semiconductor body 1 emission change; Be with a kind of, for example habitual epoxy resin or acrylate or another kind of material that can printing opacity in light-emitting diode technology, for example unorganic glass is made.
Coating one deck luminous transform layer 4 on this transparent involucrum 15 as shown in Figure 2, encases the whole surface of involucrum 15, also can only encase this surperficial part with luminous transform layer 4.Luminous transform layer 4 remains usefulness, is for example made by a kind of transparent plastic that is mixed with luminescent material 6 (for example epoxy resin, varnish or methyl methacrylate).The semiconductor device that emits white light so also is preferentially to select for use YAG:Ce as luminescent material.
The distinctive advantage of this embodiment is, the path of being passed luminous inverting element by the ray of semiconductor body emission equates substantially.Erect image is recurrent like that, and when the accurate tone of the light of being launched by semiconductor device will depend on the length in this path, this length will play the effect of particular importance.
The output coupling of the light that is sent for the luminous transform layer 4 that improves among Fig. 2 can be provided with a lentiform nappe 29 (dotting) on a side of this device, the total reflection of emission light in luminous transform layer 4 inside is used for decaying.This lentiform nappe 29 can then, for example be bonded on the luminous transform layer 4 with transparent plastic or glass manufacturing, perhaps directly is made as the overall structure of the member of luminous transform layer 4.
In the embodiment shown in fig. 3, first and second lead-in wires the 2, the 3rd are embedded in printing opacity or prefabricated, as to leave a breach 9 pedestal 8.So-called " prefabricated " is meant, adopted that for example injection moulding is connected base 8 the finished product structure that forms on the lead-in wire 2,3 in advance before semiconductor body being installed on the lead-in wire 2.Base 8 is, for example made by a kind of plastics of printing opacity, and breach 9 is to make the speculum (sometimes by the suitable coating on breach 9 inwalls) that is used for reflecting the usefulness of the ray of being launched at the semiconductor body duration of work according to its shape.Such base 8 is as for the usefulness of the conductive plate of mounted thereto light-emitting diode.Be to adopt before semiconductor body is installed, for example injection moulding is installed in base on the conductive strips (lead frame) of conductive lead wire 2,3.
Embodiment in the positive print 2 is such, in order to improve the optical coupling that comes self-luminous transform layer 4, also a lentiform nappe 29 (dotting) can be set above it herein, is used for decaying in the total reflection of the light of luminous transform layer 4 emissions.This nappe can be used the transparent plastic manufacturing, is bonded at, and above for example luminous transform layer 4, perhaps makes an overall structure jointly with luminous transform layer 4.
As shown in figure 10, in a kind of version of especially preferentially selecting for use, breach 9 usefulness are a kind of contain luminescent material epoxy resin, that is to say it is with a kind of luminous involucrum 5 fillings, form the structure of luminous inverting element.Just can save a cover plate 17 and/or a lentiform nappe 29 in the case.In addition, also have another kind of way as shown in figure 13, for example with first conductive lead wire 2 by punching press in the scope of semiconductor body 1 with the interior structure that makes a reflective mirror 34, middle with a kind of luminous conversion involucrum 5 fillings.
Shown in Figure 4 is a kind of radially example of the another kind of manufacture method of diode that is called.Among the figure, semiconductor body 1 be by, for example the welding or the bonding method, be fixed among a kind of mirror construction parts 16 that make with first conductive lead wire 2.The structure of this shell shape is a shape habitual in light-emitting diode technology, so no longer elaborate herein.
Semiconductor body 1 in the embodiment of Fig. 4 is to encase with a kind of transparent involucrum 15, as shown in above-mentioned second embodiment (Fig. 2), the wavelength of the ray of semiconductor body 1 emission is changed, can adopt, for example the transparent epoxy resin or the glass manufacturing of in light-emitting diode technology, habitually practising.
The luminous transform layer 4 of coating one deck on this transparent involucrum 15.Used for this reason material still can be plastics or the unorganic glass that adopts in above-described embodiment, adds the relevant dyestuff at these place row.
The total that is made of semiconductor body 1, a part of conductive lead wire 2,3, transparent involucrum 15 and luminous transform layer 4 directly encases with another kind of transparent involucrum 10.The wavelength of the ray that sees through luminous transform layer 4 emissions is changed.This involucrum remains, and for example adopts transparent epoxy resin habitual in light-emitting diode technology or unorganic glass to make.
Embodiment shown in Figure 5 and the main difference part among Fig. 4 are that the vacant surface of semiconductor body 1 directly encases with a luminous conversion involucrum 5, and then encase with another kind of transparent involucrum 10.In Fig. 5, also draw a semiconductor body 1 as example, another contact-making surface of wherein making contact without the lower edge but using semiconductor multilayer structure 7 instead is made contact, and one second of The latter connects metal wire 14 and is connected with its affiliated conductive lead wire 2 or 3.Self-evident, also can replace such semiconductor body 1 with other embodiment of this paper introduction.Otherwise, the embodiment among Fig. 5 can certainly be used in the aforementioned embodiment.
Also to be explained for this self-evident situation herein, the way of planform analogy Fig. 1 embodiment that also can Fig. 5 is used is made a luminous conversion involucrum 5 of integral body, thereby replaces the way that the transparent involucrum 10 of luminous conversion involucrum 5 and another is used in combination.
In the embodiment of Fig. 6, directly on semiconductor body 1, be coated with the luminous transform layer 4 of one deck (available above listed material).The another kind of transparent involucrum 10 of this semiconductor body 1 and a part of conductive lead wire 2,3 usefulness encases, and the wavelength of the ray that sees through luminous transform layer 4 emissions is changed.This involucrum remains, and for example adopts transparent epoxy resin habitual in light-emitting diode technology or glass to make.
Have the luminous transform layer 4 of one deck like this but do not have the semiconductor body 1 of involucrum to also help certainly to adopt fully shell shape habitual in semiconductor technology (for example SMD shell, radially shell (seeing also Fig. 5)).
At the embodiment shown in Figure 14 is according to a semiconductor device of the present invention, and a transparent channel member 35 is set on semiconductor body 1, and Here it is at one of semiconductor body 1 outside bag groove 36.Groove shape parts 35 for example make with transparent epoxy resin or unorganic glass, and, for example adopt injection moulding, conductive lead wire 2,3 is encapsulated in together with semiconductor body 1 makes.In such bag groove 36, comprise and scribble one deck and remain the luminous transform layer made from epoxy resin or unorganic glass 4, wherein be mixed with above listed phosphor particles 37.Adopt the advantage of this structure to be, can be to guarantee that structure is very simple, luminescent material can not accumulate in advance and not consider in the manufacture process of semiconductor device, for example near the position semiconductor body.Groove shape parts 35 can certainly be made separately separately, also can use instead, and the way that for example covers on the semiconductor body 1 is fixed on the casing component.
Among the embodiment that more than all, introduces, reach optimization in order to make color get involved radiative degree, in order to make itself and luminous inverting element (luminous conversion involucrum 5 or luminous transform layer 4) suitable, sometimes in transparent involucrum 15 and/or transparent involucrum 10, mix optical scatter, the most advantageously mix diffusant.Example as such diffusant is the filler of mineral, particularly CaF
2, TiO
2, SiO
2, CaCO
3Or BaSO
4, perhaps also can use organic pigment.These materials can adopt simple method to mix among the above-mentioned plastics.
Shown in Fig. 7,8 and 12 be a kind of blue light of semiconductor body emission emission spectrum (Fig. 7) (luminous maximum at λ=430nm) or emitting white light of adopting that a kind of such semiconductor body makes, according to the emission spectrum of semiconductor device of the present invention (Fig. 8 and Figure 12).Respectively unit mark wavelength X on abscissa; On ordinate, mark a kind of relative electroluminescence (EL) intensity respectively.
Only some is for conversion into the long wavelength period of wavelength to the ray of being launched by semiconductor body shown in Figure 7, thereby produces the white light of secondary colour.The curve 30 that is represented by dotted lines in Fig. 8 is the emission spectrum according to a kind of semiconductor device of the present invention, and this ray is formed by two kinds of auxiliary wavelength period (Lan Hehuang), total emission be white light.Spectrum among the figure about 400 and 430nm between (indigo plant) and about 550 and 580nm between (Huang) maximum appears respectively.Emission spectrum according to semiconductor device of the present invention of whole piece curve 31 expressions, white is to be mixed by three kinds of wavelength period (by blue, green, the red stack that constitutes three looks).Emission spectrum among the figure for example about 430nm about (indigo plant), 500nm about (green) and 615nm (red) locate to have respectively a maximum.
Emission shown in Figure 11 in addition is by the emission spectrum according to semiconductor device of the present invention of the mixed light of blue light (a kind of maximum of wavelength is at about 470nm) and ruddiness (a kind of maximum of wavelength is about 620nm) formation.Emission light is pressed total look of human eye and is magenta.Still be equivalent to shown in Figure 7 by the semiconductor body emission spectrum emitted herein.
Shown in Figure 12 be one emit white light, according to semiconductor device of the present invention, possess the emission emission spectrum shown in Figure 7 semiconductor body, wherein used luminescent material is YAG:Ce.In the ray of semiconductor body emission, have only sub-fraction to be transformed into the long wavelength period of wavelength, thereby produce mixed white light.Curve 31 to 33 with different dotted lines among Fig. 8 is emission spectrum of representing according to semiconductor device of the present invention.Luminous inverting element, luminous inverting element is wherein made with epoxy resin, contains the YAG:Ce of variable concentrations.Each emission spectrum a maximum of intensity occurring between the λ=420nm and λ=430 of blue light spectral coverage, between λ=520 of green light spectral coverage and λ=545 respectively, and most of emission band that wherein contains the maximum of intensity of a longer wavelength all is in the sodium yellow spectral coverage.As seen adopt according to semiconductor device of the present invention and need only the concentration of passing through to change the luminescent material in the epoxy resin simply by obvious in Figure 12 curve, just can change the CIE-color bits in the white light.
In addition, garnet, thiogallate, the alkaline-earth metal-sulfide aluminate that is mixed with Ce directly can also be coated on the semiconductor body, will it not be dispersed in epoxy resin or the glass.
An other special benefits of above-mentioned phosphor is, the concentration of luminescent material in epoxy resin for example can will not be subjected to keeping within bounds of solubility as luminous organic material.Thereby do not need with very thick luminous inverting element.
Surely not will be confined on these embodiment for explanation by the foregoing description according to semiconductor device of the present invention according to the present invention.Be with light-emitting diode chip for backlight unit or laser diode chip example in example as semiconductor body, it is also understood that into, for example be the polymer LED of the corresponding spectrum of emission.
Claims (29)
1. the semiconductor chip of divergent-ray has
A semiconductor multilayer structure, it is suitable for the electromagnetic radiation of emission first wavelength period from ultraviolet, indigo plant and/or green spectral region;
A luminous transform layer that contains at least a phosphor, this phosphor has different refractive index mutually with the material of sealing it, described luminous transform layer is transformed into the ray of second wavelength period different with first wavelength period with the ray of first wavelength period, comprises the first wavelength period ray and the polychrome ray that comes from the second wavelength period ray of described luminescent material that comes from described semiconductor multilayer structure and pass described luminous transform layer thereby this semiconductor chip is launched.
2. semiconductor chip as claimed in claim 1 is characterized in that, described luminous transform layer is arranged to directly contact with described semiconductor multilayer structure.
3. as the semiconductor chip of one of claim 1-2, it is characterized in that, described luminous transform layer is transformed into the ray of a plurality of second wavelength period of being made up of different spectrum subarea with the described first wavelength period ray, thus the polychrome ray of the ray of the ray that this semiconductor chip is launched comprise first wavelength period and a plurality of second wavelength period.
4. semiconductor chip as claimed in claim 3 is characterized in that, first wavelength period and described second wavelength period of being launched by described semiconductor multilayer structure form stack three coloured light, makes to launch white light when this semiconductor chip work.
5. as the semiconductor chip of one of claim 1-2, it is characterized in that described second wavelength period comprises the wavelength of at least a portion wavelength greater than first wavelength period.
6. as the semiconductor chip of one of claim 1-2, it is characterized in that described semiconductor multilayer structure is suitable for launching at work ultraviolet ray, and described luminous transform layer should ultraviolet at least a portion be transformed into visible light.
7. as the semiconductor chip of one of claim 1-2, it is characterized in that first wavelength period in the polychrome ray and second wavelength period have at least a part to be arranged in the complementary colours SPECTRAL REGION, and the mixing of the ray of first and second wavelength period produces white light.
8. as the semiconductor chip of one of claim 1-2, it is characterized in that described luminous transform layer comprises a plurality of layers with different wave length conversion characteristics.
9. as the semiconductor chip of one of claim 1-2, it is characterized in that this luminescent material is that a kind of particle mean size is the phosphor of 10 μ m.
10. as the semiconductor chip of one of claim 1-2, it is characterized in that this luminescent material is to select the orthosilicate that this group has rare earth doped garnet, is mixed with the thiogallate of rare earth, is mixed with the aluminate of rare earth and is mixed with rare earth from a group.
11. the semiconductor chip as claim 10 is characterized in that, this luminescent material is the garnet that mixes with Ce.
12. the semiconductor chip as claim 11 is characterized in that, this luminescent material is YAG:Ce.
13. the semiconductor chip as claim 10 is characterized in that, this phosphor directly be coated on the semiconductor body based on the garnet that is mixed with Ce, thiogallate, alkaline-earth metal-sulfide and aluminate.
14. the semiconductor chip as one of claim 1-2 is characterized in that, contains the multiple mutually different material of selecting from the group of being made up of organic and phosphor in this luminous transform layer.
15. the semiconductor chip as claim 1-2 is characterized in that, described luminous transform layer contains from being had by part and part does not have the dye molecule of selecting molecular group of the organic and inorganic dyestuff of wavelength conversion effect.
16. the luminous semiconductor device as claim 1-2 is characterized in that, described luminous transform layer contains a kind of luminescent material of blue light-emitting.
17. the semiconductor chip as claim 1-2 is characterized in that, the ray of described semiconductor multilayer structure emission has the luminous intensity maximum when wavelength X≤520nm.
18. the semiconductor chip as claim 17 is characterized in that, the wavelength place of ray between 420nm and 460nm that is launched by described semiconductor multilayer structure has the luminous intensity maximum.
19. semiconductor chip as claim 1-2, it is characterized in that, have the relative intensity maximum by the ray of described semiconductor multilayer structure emission when the wavelength X≤520nm, and can be positioned at outside this maximum of intensity by the wavelength period that described luminous coversion material is selected to absorb on the spectrum.
20. semiconductor chip as one of claim 1-2, it is characterized in that, described semiconductor multilayer structure is a kind of semiconductor multilayer structure of blue light-emitting, and is transformed into the yellow spectrum zone by the part of the blue spectrum zone ray of this semiconductor multilayer structure emission by this luminous transform layer.
21. the semiconductor chip as one of claim 1-2 is characterized in that, described phosphor is mixed in the matrix of thermoplastic resin or thermosets.
22. the semiconductor chip as one of claim 1-2 is characterized in that, described phosphor is mixed in the matrix of epoxy resin or acrylate.
23. the semiconductor chip as one of claim 1-2 is characterized in that, this phosphor is mixed in a kind of matrix of low melting point unorganic glass.
24. the semiconductor chip as one of claim 1-2 is characterized in that, this phosphor is mixed in the matrix of silicone material.
25. semiconductor chip as one of claim 1-2, it is characterized in that, the particle of this luminescent material helps the weakening of directional characteristic of the first wavelength period ray, make this first wavelength period ray come from semiconductor body and to pass described luminous inverting element mix, so that uniform colour vision on the generation space with this second wavelength period ray that comes from described luminescent material.
26. the aircraft cabin interior lighting comprises a plurality of semiconductor chips as one of claim 1-25 described divergent-ray.
27. display unit, comprise a plurality of as the described semiconductor chip of one of claim 1-25, be arranged to the to throw light on demonstration of this display unit of described semiconductor chip.
28. the display unit as claim 27 is characterized in that, this display unit comprises liquid crystal display.
29. panchromatic LED display unit comprises a plurality of semiconductor chips as one of claim 1-25 described divergent-ray.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19625622.4 | 1996-06-26 | ||
| DE19625622A DE19625622A1 (en) | 1996-06-26 | 1996-06-26 | Light radiating semiconductor constructional element |
| DE19638667.5 | 1996-09-20 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB971974020A Division CN1264228C (en) | 1996-06-26 | 1997-06-26 | Light-emitting semi-conductor component with luminescence conversion element |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100999800A Division CN100514684C (en) | 1996-06-26 | 1997-06-26 | Light-emitting semiconductor device and device containing the same |
| CN200610101629.0A Division CN1893136B (en) | 1996-06-26 | 1997-06-26 | Light radiating semiconductor device and arrangement containing same |
| CNB2006100999783A Division CN100557833C (en) | 1996-06-26 | 1997-06-26 | Luminous semiconductor device and the device that contains this luminous semiconductor device |
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| Publication Number | Publication Date |
|---|---|
| CN1722485A CN1722485A (en) | 2006-01-18 |
| CN100565945C true CN100565945C (en) | 2009-12-02 |
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Family Applications (9)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100917308A Expired - Lifetime CN100433382C (en) | 1996-06-26 | 1997-06-26 | Single covering element for semiconductor device outer case and apparatus containing the same |
| CNB2006101016500A Expired - Lifetime CN100435369C (en) | 1996-06-26 | 1997-06-26 | Light-emitting semiconductor device having radiation converting covering element |
| CN200610101629.0A Expired - Lifetime CN1893136B (en) | 1996-06-26 | 1997-06-26 | Light radiating semiconductor device and arrangement containing same |
| CNB2006100999800A Expired - Lifetime CN100514684C (en) | 1996-06-26 | 1997-06-26 | Light-emitting semiconductor device and device containing the same |
| CNB2005100917295A Expired - Lifetime CN100442555C (en) | 1996-06-26 | 1997-06-26 | Light-radiating semiconductor and device containing with the same |
| CNB2006100999783A Expired - Lifetime CN100557833C (en) | 1996-06-26 | 1997-06-26 | Luminous semiconductor device and the device that contains this luminous semiconductor device |
| CNB2005100917280A Expired - Lifetime CN100565945C (en) | 1996-06-26 | 1997-06-26 | The semiconductor chip of divergent-ray and comprise the device of this semiconductor chip |
| CNB2006101016572A Expired - Lifetime CN100502066C (en) | 1996-06-26 | 1997-06-26 | Light-radiating semiconductor component with a luminescence conversion element |
| CN200610101860XA Expired - Lifetime CN1917240B (en) | 1996-06-26 | 1997-06-26 | Light-emitting semiconductor device possessing light-emitting conversion element |
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| CNB2005100917308A Expired - Lifetime CN100433382C (en) | 1996-06-26 | 1997-06-26 | Single covering element for semiconductor device outer case and apparatus containing the same |
| CNB2006101016500A Expired - Lifetime CN100435369C (en) | 1996-06-26 | 1997-06-26 | Light-emitting semiconductor device having radiation converting covering element |
| CN200610101629.0A Expired - Lifetime CN1893136B (en) | 1996-06-26 | 1997-06-26 | Light radiating semiconductor device and arrangement containing same |
| CNB2006100999800A Expired - Lifetime CN100514684C (en) | 1996-06-26 | 1997-06-26 | Light-emitting semiconductor device and device containing the same |
| CNB2005100917295A Expired - Lifetime CN100442555C (en) | 1996-06-26 | 1997-06-26 | Light-radiating semiconductor and device containing with the same |
| CNB2006100999783A Expired - Lifetime CN100557833C (en) | 1996-06-26 | 1997-06-26 | Luminous semiconductor device and the device that contains this luminous semiconductor device |
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| CNB2006101016572A Expired - Lifetime CN100502066C (en) | 1996-06-26 | 1997-06-26 | Light-radiating semiconductor component with a luminescence conversion element |
| CN200610101860XA Expired - Lifetime CN1917240B (en) | 1996-06-26 | 1997-06-26 | Light-emitting semiconductor device possessing light-emitting conversion element |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19638667C2 (en) | 1996-09-20 | 2001-05-17 | Osram Opto Semiconductors Gmbh | Mixed-color light-emitting semiconductor component with luminescence conversion element |
| EP1441395B9 (en) | 1996-06-26 | 2012-08-15 | OSRAM Opto Semiconductors GmbH | Light-emitting semiconductor device with luminescence conversion element |
| DE19803936A1 (en) * | 1998-01-30 | 1999-08-05 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Expansion-compensated optoelectronic semiconductor component, in particular UV-emitting light-emitting diode and method for its production |
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- 1997-06-26 CN CNB2006101016500A patent/CN100435369C/en not_active Expired - Lifetime
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- 1997-06-26 CN CNB2006100999800A patent/CN100514684C/en not_active Expired - Lifetime
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Also Published As
| Publication number | Publication date |
|---|---|
| CN1983651A (en) | 2007-06-20 |
| CN100557833C (en) | 2009-11-04 |
| CN1722486A (en) | 2006-01-18 |
| CN1893136A (en) | 2007-01-10 |
| CN1881637A (en) | 2006-12-20 |
| CN1893136B (en) | 2014-03-12 |
| CN1913183A (en) | 2007-02-14 |
| CN1917240B (en) | 2012-05-23 |
| DE19625622A1 (en) | 1998-01-02 |
| CN1738067A (en) | 2006-02-22 |
| CN100514684C (en) | 2009-07-15 |
| CN100442555C (en) | 2008-12-10 |
| CN1917240A (en) | 2007-02-21 |
| CN100433382C (en) | 2008-11-12 |
| CN100435369C (en) | 2008-11-19 |
| CN100502066C (en) | 2009-06-17 |
| CN1722485A (en) | 2006-01-18 |
| CN1905226A (en) | 2007-01-31 |
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