CN1888126A - Boron nitride pyrolyzing crucible coating method and apparatus - Google Patents
Boron nitride pyrolyzing crucible coating method and apparatus Download PDFInfo
- Publication number
- CN1888126A CN1888126A CN 200510012052 CN200510012052A CN1888126A CN 1888126 A CN1888126 A CN 1888126A CN 200510012052 CN200510012052 CN 200510012052 CN 200510012052 A CN200510012052 A CN 200510012052A CN 1888126 A CN1888126 A CN 1888126A
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- Prior art keywords
- pbn crucible
- top layer
- temperature
- furnace chamber
- film coating
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- 238000000576 coating method Methods 0.000 title abstract description 7
- 229910052582 BN Inorganic materials 0.000 title description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 title description 3
- 239000000463 material Substances 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 21
- 238000010438 heat treatment Methods 0.000 claims abstract description 16
- 238000007789 sealing Methods 0.000 claims description 17
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910002804 graphite Inorganic materials 0.000 claims description 6
- 239000010439 graphite Substances 0.000 claims description 6
- 230000008676 import Effects 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 230000003319 supportive effect Effects 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 2
- 238000006297 dehydration reaction Methods 0.000 claims description 2
- 239000007888 film coating Substances 0.000 claims 8
- 238000009501 film coating Methods 0.000 claims 8
- 238000010792 warming Methods 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000011109 contamination Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000003245 working effect Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000005437 stratosphere Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention belongs to the field of semiconductor technology, and is especially coating method and apparatus for the surface of PBN crucible for LEC process monocrystal growth. The coating apparatus includes one container for holding volatile material, one heating system with temperature control device, one support system, and one closed furnace with corresponding vacuum equipment to provide volatilizing space. The coating method is that under the basis of traditional technological process and by means of heating and temperature control with the heating system with temperature control device, B2O3 with high water content is dewatered, volatilized and diffused to the surface of PBN crucible at the low temperature end to form B2O3 film.
Description
Technical field
The invention belongs to technical field of semiconductors, particularly PBN crucible method for treating surface layer and device in the preparatory technology of LEC method growth body monocrystalline.
Background technology
Semiconductor material is the basis of information society, is widely used in electronic information and optical communication field.The III-V group iii v compound semiconductor material is occupied critical positions with its special performance at stratosphere, wherein as gallium arsenide, indium phosphide as the development very high speed integrated circuit, the microwave monolithic circuit, the integrated base mateiral of opto-electronic device and photoelectricity thereof has been subjected to extensive concern.
Early eighties has developed the LEC technology in the world, and promptly in the high pressure single crystal growing furnace, starting material Ga and As place pyrolitic boron nitride (PBN) crucible simultaneously, with B
2O
3Be insulating covering agent, the synthetic soldier's growing single-crystal of original position under 60 normal atmosphere.
The PBN crucible is as raw-material carrier, and its treatment process directly influences the quality of monocrystalline, also is related to the production cost control of whole experiment its work-ing life.
Existing P BN crucible treatment process is in air, the PBN crucible is put into resistance furnace or other process furnace toast.Behind each growing crystal, the big area decortication all appears in PBN crucible inwall, even demixing phenomenon occurs, and this method can not well solve PBN pot life problem, and simultaneously, impurity is to the contamination of the PBN crucible also direct quality of shadow body monocrystalline in the air.And the high breakage rate of PBN crucible has also increased the industrialization production cost.For addressing these problems, invented the coating technique of PBN crucible, satisfy and produce needs.
Summary of the invention
The objective of the invention is at the top layer of PBN crucible plated film, under the prerequisite that guarantees the bulk growth specification of quality, in the work-ing life of fully improving the PBN crucible, reduce production costs.
The top layer plated film of PBN crucible of the present invention is characterized in that, comprising:
The container of dress volatile materials is positioned at sealing furnace chamber center, adopts high temperature material, and does not react with volatile materials, and volatile materials can form film at the PBN crucible surface, and does not influence body monocrystalline quality; The PBN crucible is positioned at the top of sealing furnace chamber on support system,
One jacket heating system and temperature control device, heat temperature raising makes volatile material diffuse to the superficial deposit of PBN crucible; Heating system the sealing furnace chamber around,
One cover support system plays a supportive role to the PBN crucible, requires high temperature resistant;
One is sealed furnace chamber and vacuum apparatus, and the volatilization space is provided.
Wherein, container uses platinum (Pt) manufacturing, and volatile material is with high moisture B
2O
3, because B
2O
3Itself be the insulating covering agent in the bulk growth process, thus can not impact the monocrystalline quality, and do not react with container;
Wherein heating system can adopt the high purity graphite system, can select import graphite for use.Temperature control device can adopt import Continental Europe and other temperature control instruments and be equipped with peripheral circuit equipment.
Wherein support system can be made with Mo.
Wherein sealing furnace chamber uses stainless material to add water-cooled.
The Technology explanation:
The present invention is on the conventional processes basis, controls intensification, constant temperature, cooling by heating system and temperature control device, with the moisture B of height
2O
3Dehydration also makes its volatilization, diffuses to the top layer of the PBN crucible that is in low-temperature end, forms B
2O
3Film.
Sealing furnace chamber and vacuum apparatus guarantee the purity of whole PBN crucible treating processes.
The PBN crucible that adopts above-mentioned Technology to handle, inwall state behind each growing crystal
Tangible improvement has been arranged, smooth surface, scaling reduces, seldom demixing phenomenon occurs, has saved production cost.And under vacuum condition, handle, stop in the air impurity to the contamination of PBN crucible, thereby improved the monocrystalline quality.
Description of drawings
Fig. 1 is a whole PBN crucible top layer coating system synoptic diagram.
Embodiment
See also shown in Figure 1, PBN crucible of the present invention top layer plated film, comprising:
1, equipment
The container (5) of dress volatile materials is positioned at sealing furnace chamber (1) center, adopts high temperature material, and does not react with volatile materials.Volatile materials can form film at PBN (2) crucible surface, and does not influence body monocrystalline quality.PBN (2) crucible is positioned at the top of sealing furnace chamber (1) on support system (3).
One jacket heating system (4) and temperature control device (7), heat temperature raising makes volatile material diffuse to the superficial deposit of PBN crucible.Heating system (4) is around sealing furnace chamber (1).
One cover support system (3) plays a supportive role to PBN crucible (2), requires high temperature resistant.
One is sealed furnace chamber (1) and vacuum apparatus (6), and the volatilization space is provided.
Wherein, container uses platinum (Pt) manufacturing, and volatile material is with high moisture B
2O
3, because B
2O
3Itself be the insulating covering agent in the bulk growth process, thus can not impact the monocrystalline quality, and do not react with container;
Wherein heating system can adopt the high purity graphite system, can select import graphite for use.Temperature control device can adopt import Continental Europe and other temperature control instruments and be equipped with peripheral circuit equipment.
Wherein support system can be made with Mo.
Wherein sealing furnace chamber uses stainless material to add water-cooled.
2, concrete process implementing explanation:
PBN crucible (2) after the present invention handles traditional technology, put on the support system (3) of sealing furnace chamber (1), vacuumize then, and heat temperature raising, by the control of heating system (4) and temperature control device (7) heat up (to 1000-1200 ℃), constant temperature (2-4 hour), reduce to room temperature then, in whole temperature controlled processes, guarantee the vacuum tightness (being lower than 10Pa) of sealing furnace chamber.
Claims (8)
1, a kind of top layer film coating apparatus of PBN crucible is characterized in that, comprising:
The container of dress volatile materials is positioned at sealing furnace chamber center, adopts high temperature material, and does not react with volatile materials, and volatile materials can form film at the PBN crucible surface, and does not influence body monocrystalline quality; The PBN crucible is positioned at the top of sealing furnace chamber on support system,
One jacket heating system and temperature control device, heat temperature raising makes volatile material diffuse to the superficial deposit of PBN crucible; Heating system the sealing furnace chamber around,
One cover support system plays a supportive role to the PBN crucible, requires high temperature resistant;
One is sealed furnace chamber and vacuum apparatus, and the volatilization space is provided.
2. according to the top layer film coating apparatus of the PBN crucible of claim 1, it is characterized in that,
Wherein, container uses the platinum manufacturing, and volatile material is with high moisture B
2O
3, because B
2O
3Itself be the insulating covering agent in the bulk growth process, thus can not impact the monocrystalline quality, and do not react with container.
3. according to the top layer film coating apparatus of the PBN crucible of claim 1, it is characterized in that wherein, heating system can adopt the high purity graphite system, can select import graphite for use.
4. according to the top layer film coating apparatus of the PBN crucible of claim 1, it is characterized in that wherein, temperature control device can adopt import Continental Europe and other temperature control instruments and be equipped with peripheral circuit equipment.
5. according to the top layer film coating apparatus of the PBN crucible of claim 1, it is characterized in that wherein, support system can be made with Mo.
6. according to the top layer film coating apparatus of the PBN crucible of claim 1, it is characterized in that,
Wherein, the sealing furnace chamber uses stainless material to add water-cooled.
7. PBN crucible top layer film coating method, its technological process is as follows:
On the conventional processes basis, control intensification, constant temperature, cooling by heating system and temperature control device, with the moisture B of height
2O
3Dehydration also makes its volatilization, diffuses to the top layer of the PBN crucible that is in low-temperature end, forms B
2O
3Film.
8. according to the PBN crucible top layer film coating method of claim 7, it is characterized in that, with the PBN crucible (2) after handling, put on the support system (3) of sealing furnace chamber (1), vacuumize then, and heat temperature raising, be warming up to 1000-1200 ℃, constant temperature 2-4 hour, reduce to room temperature then by heating system (4) and temperature control device (7) control, in whole temperature controlled processes, guarantee that the vacuum tightness of sealing furnace chamber is lower than 10Pa.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100120521A CN100494473C (en) | 2005-06-30 | 2005-06-30 | Boron nitride pyrolyzing crucible coating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100120521A CN100494473C (en) | 2005-06-30 | 2005-06-30 | Boron nitride pyrolyzing crucible coating method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1888126A true CN1888126A (en) | 2007-01-03 |
| CN100494473C CN100494473C (en) | 2009-06-03 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100120521A Active CN100494473C (en) | 2005-06-30 | 2005-06-30 | Boron nitride pyrolyzing crucible coating method |
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| Country | Link |
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| CN (1) | CN100494473C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105779976A (en) * | 2016-05-10 | 2016-07-20 | 中国环境科学研究院 | Boron oxide film-plating method for combustion reactor under condition of laboratory |
| CN108396388A (en) * | 2018-04-28 | 2018-08-14 | 广东先导先进材料股份有限公司 | Vertical baking oxidative system |
| CN108517565A (en) * | 2018-04-28 | 2018-09-11 | 广东先导先进材料股份有限公司 | Crucible process system |
-
2005
- 2005-06-30 CN CNB2005100120521A patent/CN100494473C/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105779976A (en) * | 2016-05-10 | 2016-07-20 | 中国环境科学研究院 | Boron oxide film-plating method for combustion reactor under condition of laboratory |
| CN105779976B (en) * | 2016-05-10 | 2018-03-16 | 中国环境科学研究院 | The boron oxide film plating process of combustion reactor under laboratory condition |
| CN108396388A (en) * | 2018-04-28 | 2018-08-14 | 广东先导先进材料股份有限公司 | Vertical baking oxidative system |
| CN108517565A (en) * | 2018-04-28 | 2018-09-11 | 广东先导先进材料股份有限公司 | Crucible process system |
| CN108396388B (en) * | 2018-04-28 | 2023-10-03 | 广东长信精密设备有限公司 | Vertical baking oxidation system |
| CN108517565B (en) * | 2018-04-28 | 2023-12-01 | 广东长信精密设备有限公司 | Crucible processing system |
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| Publication number | Publication date |
|---|---|
| CN100494473C (en) | 2009-06-03 |
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Owner name: YUNNAN ZHONGKE XINYUAN CRYSTAL MATERIAL CO., LTD. Free format text: FORMER OWNER: INST. OF SEMICONDUCTOR, CAS Effective date: 20081107 |
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Effective date of registration: 20081107 Address after: The main building of hi tech Information Center, No. 398 West Ring Road, hi tech Zone, Yunnan, Kunming Province, China: 650000 Applicant after: YUNNAN ZHONGKE XINYUAN CRYSTALLINE MATERIAL Co.,Ltd. Address before: Postcode 35, Qinghua East Road, Beijing, Haidian District: 100083 Applicant before: INSTITUTE OF SEMICONDUCTORS, CHINESE ACADEMY OF SCIENCES |
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Denomination of invention: A coating method for the surface layer of pyrolytic boron nitride crucible Effective date of registration: 20230208 Granted publication date: 20090603 Pledgee: CITIC Bank Limited by Share Ltd. Kunming branch Pledgor: YUNNAN ZHONGKE XINYUAN CRYSTALLINE MATERIAL Co.,Ltd.|YUNNAN LINCANG XINYUAN GERMANIUM INDUSTRY Co.,Ltd.|YUNNAN DONGCHANG METAL PROCESSING Co.,Ltd.|KUNMING YUNZHE HIGH-TECH Co.,Ltd. Registration number: Y2023530000003 |
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| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Granted publication date: 20090603 Pledgee: CITIC Bank Limited by Share Ltd. Kunming branch Pledgor: YUNNAN ZHONGKE XINYUAN CRYSTALLINE MATERIAL Co.,Ltd.|YUNNAN LINCANG XINYUAN GERMANIUM INDUSTRY Co.,Ltd.|YUNNAN DONGCHANG METAL PROCESSING Co.,Ltd.|KUNMING YUNZHE HIGH-TECH Co.,Ltd. Registration number: Y2023530000003 |