CN101037795A - Sb doped P-type ZnO crystal film and preparation method thereof - Google Patents
Sb doped P-type ZnO crystal film and preparation method thereof Download PDFInfo
- Publication number
- CN101037795A CN101037795A CN 200710066967 CN200710066967A CN101037795A CN 101037795 A CN101037795 A CN 101037795A CN 200710066967 CN200710066967 CN 200710066967 CN 200710066967 A CN200710066967 A CN 200710066967A CN 101037795 A CN101037795 A CN 101037795A
- Authority
- CN
- China
- Prior art keywords
- target
- substrate
- crystal film
- zno
- growing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000000843 powder Substances 0.000 claims abstract description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000919 ceramic Substances 0.000 claims abstract description 12
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 12
- 239000001301 oxygen Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 10
- 238000000137 annealing Methods 0.000 claims abstract description 9
- 238000005245 sintering Methods 0.000 claims abstract description 9
- 238000000498 ball milling Methods 0.000 claims abstract description 6
- 238000002156 mixing Methods 0.000 claims abstract description 6
- 238000005303 weighing Methods 0.000 claims abstract description 6
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 4
- 238000004549 pulsed laser deposition Methods 0.000 claims description 7
- 238000000748 compression moulding Methods 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 2
- 238000002679 ablation Methods 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract description 8
- 238000000465 moulding Methods 0.000 abstract description 4
- 239000013077 target material Substances 0.000 abstract description 4
- 238000001816 cooling Methods 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- 239000011230 binding agent Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 238000010186 staining Methods 0.000 description 3
- 238000010792 warming Methods 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB200710066967XA CN100432302C (en) | 2007-01-29 | 2007-01-29 | Sb doped P-type ZnO crystal film and preparation method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB200710066967XA CN100432302C (en) | 2007-01-29 | 2007-01-29 | Sb doped P-type ZnO crystal film and preparation method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101037795A true CN101037795A (en) | 2007-09-19 |
CN100432302C CN100432302C (en) | 2008-11-12 |
Family
ID=38888960
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB200710066967XA Expired - Fee Related CN100432302C (en) | 2007-01-29 | 2007-01-29 | Sb doped P-type ZnO crystal film and preparation method thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN100432302C (en) |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101565163B (en) * | 2009-04-10 | 2010-12-08 | 黑龙江科技学院 | Preparation method of Zn2.33Sb0.67O4 in-situ growth material coated with ZnO fiber heterostructure |
CN101311364B (en) * | 2008-03-10 | 2010-12-15 | 中国科学院长春光学精密机械与物理研究所 | Process for preparing P-shaped zinc oxide semiconductor bulk material |
CN102153130A (en) * | 2010-12-07 | 2011-08-17 | 浙江大学 | Sb-ZnO-doped mico-nano sphere and preparation method of Sb-ZnO-doped mico-nano sphere |
CN102162131A (en) * | 2011-04-01 | 2011-08-24 | 浙江大学 | Method for growing p-type ZnMgO crystal film by doping Ag |
CN102181829A (en) * | 2011-04-22 | 2011-09-14 | 杭州电子科技大学 | Method for preparing p-type zinc oxide film through K-H co-doping |
WO2012001542A1 (en) | 2010-07-02 | 2012-01-05 | Centre National De La Recherche Scientifique | P-type doped zinc oxide |
CN102586880A (en) * | 2012-03-26 | 2012-07-18 | 上海应用技术学院 | Preparation method of oriented ZeTe nanocrystals |
US8253012B2 (en) | 2008-03-17 | 2012-08-28 | Alliance For Sustainable Energy, Llc | High quality transparent conducting oxide thin films |
CN101660121B (en) * | 2009-09-15 | 2013-01-16 | 中国科学院上海硅酸盐研究所 | Cation-anion co-doping n-type zinc-oxide-base transparent conducting film and preparation method thereof |
CN101661808B (en) * | 2009-09-15 | 2013-08-14 | 中国科学院上海硅酸盐研究所 | Multi-doping zinc-oxide-base wide-bandgap conducting material and preparation method thereof |
CN101676216B (en) * | 2008-09-16 | 2014-03-05 | 中国科学院福建物质结构研究所 | Potassium stibium zincate compound, single crystalloid, preparation method and usage thereof |
CN103695866A (en) * | 2013-12-26 | 2014-04-02 | 辽宁师范大学 | Method for preparing Sb-doped p-type ZnO film by simple chemical vapor deposition method |
CN110230057A (en) * | 2018-03-05 | 2019-09-13 | 长春理工大学 | A kind of laser ablation equipment for producing thin film |
US10651323B2 (en) | 2012-11-19 | 2020-05-12 | Alliance For Sustainable Energy, Llc | Devices and methods featuring the addition of refractory metals to contact interface layers |
CN112195438A (en) * | 2020-09-10 | 2021-01-08 | 湖北大学 | Nitrogen-doped p-type transparent conductive BeZnOS film and preparation method and application thereof |
CN114057481A (en) * | 2020-07-31 | 2022-02-18 | 广州市尤特新材料有限公司 | Method for producing zinc oxide target material and zinc oxide target material |
CN114335266A (en) * | 2022-01-27 | 2022-04-12 | 东南大学 | Preparation method of white light Micro-LED based on high-quality Micro-sphere cavity |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW541723B (en) * | 2001-04-27 | 2003-07-11 | Shinetsu Handotai Kk | Method for manufacturing light-emitting element |
CN1240883C (en) * | 2003-06-12 | 2006-02-08 | 浙江大学 | Method for preparing p-type Zn1-XMgXO crystal film |
CN1316076C (en) * | 2005-10-26 | 2007-05-16 | 浙江大学 | Process for Li-N codoping growth P type ZnO crystal film |
CN1321167C (en) * | 2005-11-25 | 2007-06-13 | 浙江大学 | Method for preparing near-infrared light-emitting ZnO film doped with lithium and erbium |
CN100406620C (en) * | 2006-05-11 | 2008-07-30 | 浙江大学 | Li-doped p-Zn1-xMgxO crystal film and method for preparing same |
-
2007
- 2007-01-29 CN CNB200710066967XA patent/CN100432302C/en not_active Expired - Fee Related
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101311364B (en) * | 2008-03-10 | 2010-12-15 | 中国科学院长春光学精密机械与物理研究所 | Process for preparing P-shaped zinc oxide semiconductor bulk material |
US8253012B2 (en) | 2008-03-17 | 2012-08-28 | Alliance For Sustainable Energy, Llc | High quality transparent conducting oxide thin films |
CN101676216B (en) * | 2008-09-16 | 2014-03-05 | 中国科学院福建物质结构研究所 | Potassium stibium zincate compound, single crystalloid, preparation method and usage thereof |
CN101565163B (en) * | 2009-04-10 | 2010-12-08 | 黑龙江科技学院 | Preparation method of Zn2.33Sb0.67O4 in-situ growth material coated with ZnO fiber heterostructure |
CN101661808B (en) * | 2009-09-15 | 2013-08-14 | 中国科学院上海硅酸盐研究所 | Multi-doping zinc-oxide-base wide-bandgap conducting material and preparation method thereof |
CN101660121B (en) * | 2009-09-15 | 2013-01-16 | 中国科学院上海硅酸盐研究所 | Cation-anion co-doping n-type zinc-oxide-base transparent conducting film and preparation method thereof |
WO2012001542A1 (en) | 2010-07-02 | 2012-01-05 | Centre National De La Recherche Scientifique | P-type doped zinc oxide |
CN102153130B (en) * | 2010-12-07 | 2012-09-19 | 浙江大学 | Sb-ZnO-doped mico-nano sphere and preparation method of Sb-ZnO-doped mico-nano sphere |
CN102153130A (en) * | 2010-12-07 | 2011-08-17 | 浙江大学 | Sb-ZnO-doped mico-nano sphere and preparation method of Sb-ZnO-doped mico-nano sphere |
CN102162131A (en) * | 2011-04-01 | 2011-08-24 | 浙江大学 | Method for growing p-type ZnMgO crystal film by doping Ag |
CN102181829B (en) * | 2011-04-22 | 2012-12-26 | 杭州电子科技大学 | Method for preparing p-type zinc oxide film through K-H co-doping |
CN102181829A (en) * | 2011-04-22 | 2011-09-14 | 杭州电子科技大学 | Method for preparing p-type zinc oxide film through K-H co-doping |
CN102586880A (en) * | 2012-03-26 | 2012-07-18 | 上海应用技术学院 | Preparation method of oriented ZeTe nanocrystals |
US10651323B2 (en) | 2012-11-19 | 2020-05-12 | Alliance For Sustainable Energy, Llc | Devices and methods featuring the addition of refractory metals to contact interface layers |
CN103695866B (en) * | 2013-12-26 | 2016-01-06 | 辽宁师范大学 | Simple chemical Vapor deposition process is adopted to prepare the method for Sb doped p type ZnO thin film |
CN103695866A (en) * | 2013-12-26 | 2014-04-02 | 辽宁师范大学 | Method for preparing Sb-doped p-type ZnO film by simple chemical vapor deposition method |
CN110230057A (en) * | 2018-03-05 | 2019-09-13 | 长春理工大学 | A kind of laser ablation equipment for producing thin film |
CN114057481A (en) * | 2020-07-31 | 2022-02-18 | 广州市尤特新材料有限公司 | Method for producing zinc oxide target material and zinc oxide target material |
CN112195438A (en) * | 2020-09-10 | 2021-01-08 | 湖北大学 | Nitrogen-doped p-type transparent conductive BeZnOS film and preparation method and application thereof |
CN114335266A (en) * | 2022-01-27 | 2022-04-12 | 东南大学 | Preparation method of white light Micro-LED based on high-quality Micro-sphere cavity |
Also Published As
Publication number | Publication date |
---|---|
CN100432302C (en) | 2008-11-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100432302C (en) | Sb doped P-type ZnO crystal film and preparation method thereof | |
CN101831701B (en) | Method for growing n-type transparent conducting ZnO crystal thin film by F doping | |
KR102414621B1 (en) | Doped gallium oxide crystalline material and its manufacturing method and application | |
CN102181825B (en) | Seed layer-assisted high performance TiO2-based transparent conductive film and preparation method thereof | |
CN100582321C (en) | Method for growing Na doping p type ZnO crystal thin film | |
CN104835869B (en) | Copper-indium-galliun-selenium film solar cell and preparation method thereof | |
Lu et al. | Comparative study of AZO and ITO thin film sputtered at different temperatures and their application in Cu 2 ZnSnS 4 solar cells | |
Chen et al. | Fabrication of transparent conducting ATO films using the ATO sintered targets by pulsed laser deposition | |
CN101483219A (en) | Co-Ga co-blended ZnO based diluted semi-conductor thin-film and manufacturing method thereof | |
CN101651148B (en) | ZnO group heterojunction and preparation method thereof | |
Lalanne et al. | Preparation and characterization of the defect–conductivity relationship of Ga-doped ZnO thin films deposited by nonreactive radio-frequency–magnetron sputtering | |
CN100406620C (en) | Li-doped p-Zn1-xMgxO crystal film and method for preparing same | |
CN100537855C (en) | Sb doped growing p type Zn 1-xMg xThe method of O crystal film | |
CN1303650C (en) | p-Zn1-XMgXO crystal film and method for making same | |
CN117107193A (en) | Zinc stannate single crystal film and preparation method thereof | |
Chen et al. | Optimization of the process for preparing Al-doped ZnO thin films by sol-gel method | |
CN103060757A (en) | Method for growing p-type transparent and conducting Ni1-xMgxO crystal film by doping Li | |
CN102181829B (en) | Method for preparing p-type zinc oxide film through K-H co-doping | |
LI et al. | Effects of heat treatment on morphological, optical and electrical properties of ITO films by sol-gel technique | |
CN1752269A (en) | Method for preparing P-zinc oxide film by ion beam intensifying deposition | |
CN101818324A (en) | Method for growing n-type ZnMgO:Ga transparent conductive film by flexible substrate | |
CN103103479B (en) | Method for preparing p-type zinc oxide film through sulfur and nitrogen co-doping | |
CN101403094A (en) | Method for growth of type n ZnMgO Ga semiconductor film on flexible substrate | |
Huang et al. | The enhanced electrical properties of TiO2-Nb2O5-ZnO varistor by sintering with the pre-synthesized B-Bi-O frit | |
CN101824597B (en) | Method for growing p-type ZnO crystal thin film by Li-F codoping |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Zhejiang Chint Solar Energy Technology Company Limited Assignor: Zhejiang University Contract fulfillment period: 2009.9.16 to 2014.9.15 Contract record no.: 2009330002584 Denomination of invention: Sb doped P-type ZnO crystal film and preparation method thereof Granted publication date: 20081112 License type: Exclusive license Record date: 20091021 |
|
LIC | Patent licence contract for exploitation submitted for record |
Free format text: EXCLUSIVE LICENSE; TIME LIMIT OF IMPLEMENTING CONTACT: 2009.9.16 TO 2014.9.15; CHANGE OF CONTRACT Name of requester: ZHEJIANG ASTRONERGY SOLAR TECHNOLOGY CO., LTD. Effective date: 20091021 |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081112 Termination date: 20200129 |
|
CF01 | Termination of patent right due to non-payment of annual fee |