CN110230057A - A kind of laser ablation equipment for producing thin film - Google Patents
A kind of laser ablation equipment for producing thin film Download PDFInfo
- Publication number
- CN110230057A CN110230057A CN201810178461.6A CN201810178461A CN110230057A CN 110230057 A CN110230057 A CN 110230057A CN 201810178461 A CN201810178461 A CN 201810178461A CN 110230057 A CN110230057 A CN 110230057A
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- Prior art keywords
- laser
- control
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- power
- sample
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- 238000000608 laser ablation Methods 0.000 title claims abstract description 8
- 239000010409 thin film Substances 0.000 title claims abstract description 8
- 238000001816 cooling Methods 0.000 claims abstract description 12
- 239000000498 cooling water Substances 0.000 claims abstract description 9
- 230000008878 coupling Effects 0.000 claims description 14
- 238000010168 coupling process Methods 0.000 claims description 14
- 238000005859 coupling reaction Methods 0.000 claims description 14
- 238000006073 displacement reaction Methods 0.000 claims description 8
- 239000013307 optical fiber Substances 0.000 claims description 8
- 230000005611 electricity Effects 0.000 claims description 4
- 239000010408 film Substances 0.000 abstract description 20
- 238000005516 engineering process Methods 0.000 abstract description 8
- 150000004767 nitrides Chemical class 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000002360 preparation method Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910003363 ZnMgO Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Lasers (AREA)
Abstract
The invention discloses a kind of laser ablation equipment for producing thin film, are made of power control system, laser system, sample room, cooling system and five part of vacuum atmosphere system；The power control system includes: general supply, Laser Power Devices power control, cooling water control, apolegamy part Bit andits control power supply；And it is electrically connected between the general supply, Laser Power Devices power control, cooling water control, apolegamy part Bit andits control power supply and computer system for control formula, and control is formed by a computer system and software；The equipment mainly uses laser technology for heat source, acts on forming various oxides, nitride binary film and ternary and multi-element film using rapid high temperature, high pressure, and structure is simple, small in size, manufacturing cost is cheap.
Description
Technical field
The present invention relates to a kind of laser ablation equipment for producing thin film, which mainly uses laser technology for heat source, utilizes
Rapid high temperature, high pressure act on forming various oxides, nitride binary film and ternary and multi-element film, are related to inorganic material system
Make plant machinery field.
Background technique
Thin-film material is a kind of two-dimensional planar materials, because having the performances such as excellent light, electricity, magnetic, heat, power, becomes existing
For the important branch of scientific technological advance, important supporting role, the technology of preparing one of film are played in the development of modern science and technology
An important factor for showing exactly to restrict film development, and the technology of preparing of film directly depends on the Preparation equipment of film.
The Preparation equipment for preparing film at present mainly has: vacuum coating equipment, magnetic control film coating equipment, electron beam filming equipment, pulse swash
Light plated film (PLD) equipment, molecular beam plated film (MBE) equipment, chemical vapor deposition (CVD) equipment, metal-organic chemical vapor
Deposit (MOCVD) equipment, physical vapour deposition (PVD) (PECVD) equipment etc..The above equipment is high-vacuum equipment large scale equipment, it is small then
Hundreds of thousands, it is then several hundred up to ten million greatly, and also maintenance cost is also and its high, for small business, general school and institute
Be impossible, also large scale equipment as unrealistic purchase.And the above equipment preparation material category is limited, and every kind of equipment is all only
Can prepare specific material, and preparing is to require early period and its harsh, such as head when MOCVD and PECVD device prepare film
It first having to the product metal ion of preparation being prepared into metallorganic gas source, this technology is inherently extremely difficult,
What many materials were all difficult to realize, and cost and its valuableness；PLD and magnetic-controlled sputtering coating equipment then need that membrane material will be plated first
Target is processed into material preparation, this process is also sufficiently complex, it is seen that the use of these equipment is also limited by very large.
The present invention provides a kind of laser heat etching Preparation equipment, equipment laser as heat source, using laser heat and
The various oxides of strength rapid synthesis, nitride binary film and ternary and multi-element film.The equipment has small-sized, simple, cost
It is cheap, using it is extensive the advantages that.
Summary of the invention
In view of the above problems, the present invention provides a kind of Preparation equipment of laser ablation film, which is mainly used
Laser technology is heat source, acts on forming various oxides, nitride binary film and ternary and polynary using rapid high temperature, high pressure
Film, and structure is simple, small in size, manufacturing cost is cheap.
To reach above-mentioned technical purpose, present invention employs a kind of laser ablation equipment for producing thin film, control system by power supply
System, laser system, sample room, cooling system and five part of vacuum atmosphere system composition；The power control system includes: total electricity
Source, Laser Power Devices power control, cooling water control, apolegamy part Bit andits control power supply；And the general supply, Laser Power Devices power
It is electrically connected, and leads to for control formula between control, cooling water control, apolegamy part Bit andits control power supply and computer system
It crosses a computer system and software forms control；
The laser system includes: laser, output port coupling unit, light beam regulation device, optical fiber, sample room coupling dress
It sets；The laser, output port coupling unit and light beam regulation device form mechanical control and connect, and the sample room coupling
It attaches together to set and the connection of control formula is formed by optical fiber between light beam regulation device；The laser and general supply form electrical property simultaneously
Connection；
The sample room includes: be located at the indoor displacement platform of vacuum atmosphere, the first sample stage, temperature control equipment, temperature measuring equipment,
Second sample stage, watch window, switch；Meanwhile first sample stage be located at the upper end of displacement platform, temperature measuring equipment is located at the second sample
The upper end of platform, temperature control equipment are located at the right end of temperature measuring equipment, and, watch window is located at the side of vacuum atmosphere room with switch
Side；
The cooling system includes: refrigerating plant, valve, pipeline, circulating pump；The refrigerating plant is located at laser bottom, and
Connection is formed by circulating pump and laser, and connection is formed by pipeline and closed box, and in laser and pipeline
Between be equipped with valve；
The vacuum atmosphere system includes: pump, gas cylinder, gas circuit, air valve；The pump, gas cylinder pass through gas circuit and the fully sheathed case bodily form
At connection；And air valve is equipped in gas circuit.
The present invention constitutes a Preparation equipment using simple five systems, is controlled by controlling software and power supply accordingly
System can be heat source by laser technology, be acted on forming various oxides, nitride binary using rapid high temperature, high pressure
Film and ternary and multi-element film, it is easy to operate, while structure is simple, manufacturing cost is low.
Detailed description of the invention
Shown in FIG. 1 is device systems structure chart of the invention；
Shown in Fig. 2 is system organization structure chart of the invention；
Wherein, 1, power control system；2, laser system；3, sample room；4, cooling system；5, vacuum atmosphere system；11, total electricity
Source；12, Laser Power Devices power control；13, cooling water control；14, part Bit andits control power supply is matched；15, computer system and soft
Part；21, laser；22, output port coupling unit；23, light beam regulation device；24, optical fiber；25, sample room coupling device；
31, displacement platform；32, the first sample stage；33, temperature control equipment；34, temperature measuring equipment；35, the second sample stage；36, observation window
Mouthful；37, it switchs；38, vacuum atmosphere room；41, refrigerating plant；42, valve；43, pipeline；44, circulating pump；51, it pumps；52, gas cylinder；
53, gas circuit；54, air valve.
Specific embodiment
The present invention is further illustrated with reference to the accompanying drawings and detailed description.
In conjunction with Fig. 1 and Fig. 2 it is found that a kind of laser ablation equipment for producing thin film, by power control system 1, laser system 2,
Sample room 3, cooling system 4 and 5 five part of vacuum atmosphere system composition.
In the present invention, it is preferred to power control system 1 include: general supply 11, Laser Power Devices power control 12, cooling water
Control 13, apolegamy part Bit andits control power supply 14.
In above system structure, general supply 11, Laser Power Devices power control 12, cooling water control 13, apolegamy part displacement control
It is electrically connected between power supply 14 processed and computer system for control formula, and passes through a computer system and the formation of software 15
Control.
In the present invention, it is preferred to laser system 2 include: laser 21, output port coupling unit 22, light beam regulation dress
Set 23, optical fiber 24, sample room coupling device 25；In above structure, laser 21, output port coupling unit 22 and light beam regulation
Device 23 forms mechanical control connection, and is formed between sample room coupling device 25 and light beam regulation device 23 by optical fiber 24
The connection of control formula；Laser 21 and general supply 11 are electrically connected simultaneously.
In the present invention, it is preferred to sample room 3 include: displacement platform 31, the first sample stage in vacuum atmosphere room 38
32, temperature control equipment 33, temperature measuring equipment 34, the second sample stage 35, watch window 36, switch 37；Meanwhile first sample stage 32
Positioned at the upper end of displacement platform 31, temperature measuring equipment 34 is located at the upper end of the second sample stage 35, and temperature control equipment 33 is located at thermometric dress
34 right end is set, and, watch window 36 and switch 37 are located at the side of vacuum atmosphere room 38；
In the present invention, it is preferred to cooling system 4 include: refrigerating plant 41, valve 42, pipeline 43, circulating pump 44；Above-mentioned knot
In structure, refrigerating plant 41 is located at 21 bottom of laser, and forms connection by circulating pump 44 and laser 21, and pass through pipeline
43 and closed box 55 formed connection, and between laser 21 and pipeline 43 be equipped with valve 42.
In the present invention, it is preferred to vacuum atmosphere system 5 include: pump 51, gas cylinder 52, gas circuit 53, air valve 54；Above structure
In, pump 51, gas cylinder 52 form connection by gas circuit 53 and vacuum atmosphere room 38；And air valve 54 is equipped in gas circuit 53.
In practice, power control system 1, laser system 2, sample room 3, cooling system 4 in the present invention and true
Air atmosphere system is connected with each other between 5 five part, is cooperated, to realize whole control.It is specific to connect as shown in figure 2,
Power control system 1 is direct by cable and data line and laser system 2, cooling system 4, sample room 3 and vacuum atmosphere system 5
It is connected, to realize the whole control of equipment.
In the present invention, cooling system 4 is connected by water route with laser 21, is reached cooling laser tube and is obtained purpose.Laser
Laser is imported sample room 3 by condenser, reflecting mirror and optical fiber 24 by device 21, realizes the connection with sample room 3.Vacuum atmosphere system
System 5 is connected with sample room 3 by gas circuit, controls gas flow by power control system 1.
Not only exist between the above various pieces and connect each other, but also can be mutually indepedent, for example, in undesirable gas protection
In the case of, vacuum atmosphere system 5 can be closed, or directly remove vacuum atmosphere system 5.It can have been prepared using the equipment
ZnO, ZnAlO, ZnMgO, MgO film.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, under the premise of not departing from technical principle of the invention, several improvements and modifications can also be made, these improve and become
Type also should be regarded as protection scope of the present invention.
Claims (1)
1. a kind of laser ablation equipment for producing thin film, by power control system, laser system, sample room, cooling system and vacuum
Five part of atmosphere system composition；The power control system includes: general supply, Laser Power Devices power control, cooling water control, choosing
Accessory Bit andits control power supply；And the general supply, Laser Power Devices power control, cooling water control, apolegamy part Bit andits control electricity
It is electrically connected between source and computer system for control formula, and control is formed by a computer system and software；
The laser system includes: laser, output port coupling unit, light beam regulation device, optical fiber, sample room coupling dress
It sets；The laser, output port coupling unit and light beam regulation device form mechanical control and connect, and the sample room coupling
It attaches together to set and the connection of control formula is formed by optical fiber between light beam regulation device；The laser and general supply form electrical property simultaneously
Connection；
The sample room includes: be located at the indoor displacement platform of vacuum atmosphere, the first sample stage, temperature control equipment, temperature measuring equipment,
Second sample stage, watch window, switch；Meanwhile first sample stage be located at the upper end of displacement platform, temperature measuring equipment is located at the second sample
The upper end of platform, temperature control equipment are located at the right end of temperature measuring equipment, and, watch window is located at the side of vacuum atmosphere room with switch
Side；
The cooling system includes: refrigerating plant, valve, pipeline, circulating pump；The refrigerating plant is located at laser bottom, and
Connection is formed by circulating pump and laser, and connection is formed by pipeline and closed box, and in laser and pipeline
Between be equipped with valve；
The vacuum atmosphere system includes: pump, gas cylinder, gas circuit, air valve；The pump, gas cylinder pass through gas circuit and the fully sheathed case bodily form
At connection；And air valve is equipped in gas circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810178461.6A CN110230057A (en) | 2018-03-05 | 2018-03-05 | A kind of laser ablation equipment for producing thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810178461.6A CN110230057A (en) | 2018-03-05 | 2018-03-05 | A kind of laser ablation equipment for producing thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110230057A true CN110230057A (en) | 2019-09-13 |
Family
ID=67862011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810178461.6A Pending CN110230057A (en) | 2018-03-05 | 2018-03-05 | A kind of laser ablation equipment for producing thin film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110230057A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002249869A (en) * | 2001-02-22 | 2002-09-06 | Tech Res & Dev Inst Of Japan Def Agency | METHOD AND SYSTEM FOR DEPOSITING SiO2 FILM USING LASER ABLATION |
| CN101037795A (en) * | 2007-01-29 | 2007-09-19 | 浙江大学 | Sb doped P-type ZnO crystal film and preparation method thereof |
| CN102031491A (en) * | 2009-09-30 | 2011-04-27 | 北京有色金属研究总院 | Continuous pulse laser coating device |
| CN207944150U (en) * | 2018-03-05 | 2018-10-09 | 长春理工大学 | A kind of laser ablation equipment for producing thin film |
-
2018
- 2018-03-05 CN CN201810178461.6A patent/CN110230057A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002249869A (en) * | 2001-02-22 | 2002-09-06 | Tech Res & Dev Inst Of Japan Def Agency | METHOD AND SYSTEM FOR DEPOSITING SiO2 FILM USING LASER ABLATION |
| CN101037795A (en) * | 2007-01-29 | 2007-09-19 | 浙江大学 | Sb doped P-type ZnO crystal film and preparation method thereof |
| CN102031491A (en) * | 2009-09-30 | 2011-04-27 | 北京有色金属研究总院 | Continuous pulse laser coating device |
| CN207944150U (en) * | 2018-03-05 | 2018-10-09 | 长春理工大学 | A kind of laser ablation equipment for producing thin film |
Non-Patent Citations (1)
| Title |
|---|
| 吴木生: ""脉冲激光沉积制备ZnO薄膜及其掺杂研究"" * |
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Application publication date: 20190913 |
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| RJ01 | Rejection of invention patent application after publication |