CN113410735A - Natural hyperbolic metamaterial Cu2Te micron disk random laser and preparation method and application thereof - Google Patents
Natural hyperbolic metamaterial Cu2Te micron disk random laser and preparation method and application thereof Download PDFInfo
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
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Abstract
The invention discloses a natural hyperbolic metamaterial Cu2A Te micron disk random laser, a preparation method and application thereof. The random laser is Cu2The Te micron disk is a semiconductor medium material with HMM characteristics, and GaTe is used as a gain medium to provide high gain for the random laser, so that the stable formation of the random laser resonator and the scattering of random laser are improved, and the random laser can obtain stable random laser with higher Q value and low threshold value. The preparation method adopts a chemical vapor deposition mode to prepare Cu2Te micron disk and GaTe gain medium deposited by magnetron sputtering or chemical vapor deposition to realize natural hyperbolic metamaterial Cu2The Te micron disk random laser is efficiently manufactured and has high yield. The random laser of the invention canThe stable random laser with higher Q value and low threshold value is obtained, can be used for LED light-emitting modules and laser imaging display photoelectric devices, and has wide application prospect.
Description
Technical Field
The invention relates to the technical field of random laser,in particular to a natural hyperbolic metamaterial Cu2A Te micron disk random laser, a preparation method and application thereof.
Background
As a novel laser, a resonator of the random laser is random or not provided with a resonant cavity, and multiple scattering is carried out on light waves by utilizing a random gain medium to form laser, so that the random laser has a special light-emitting mechanism and light-emitting characteristics. The current random laser is mainly a periodic structure of metal-dielectric materials, and can obtain random laser with higher Q value and low threshold value.
However, a hyperbolic metamaterial (HMM) based on a periodic structure of a metal-dielectric material can obtain random laser with a higher Q value and a low threshold, but due to energy loss of the metal, the photon self-emission transition lifetime of the dielectric material is low and the gain of the random laser is low, so that the random laser inevitably has the problems of high threshold and low power of the random laser.
Disclosure of Invention
In order to solve the problems of high threshold value and low power of random laser caused by metal energy loss of the conventional random laser, the invention provides a natural hyperbolic metamaterial Cu2Te microdisk random lasers. The random laser is Cu2The Te micron disk is used as a semiconductor medium material with HMM characteristics naturally, and the GaTe thin film is used as a gain material, so that the random laser can obtain stable random laser with higher Q value and low threshold value.
The invention also aims to provide the natural hyperbolic metamaterial Cu for preparing the natural hyperbolic metamaterial2Method of Te microdisk random laser.
The invention also provides the natural hyperbolic metamaterial Cu2Application of a Te microdisk random laser.
The purpose of the invention is realized by the following technical scheme.
Natural hyperbolic metamaterial Cu2The Te micron disk random laser comprises a substrate, Cu2Te micron disk, gain medium, substrate, Cu2Te micron disk and diskThe beneficial mediums are arranged from bottom to top in sequence;
the Cu2The Te micron disk is natural hyperbolic Cu2A Te micron disk; the gain medium is a GaTe thin film.
In a preferred embodiment, the substrate is a sapphire substrate.
In a preferred embodiment, the Cu2The thickness of the Te micron disk is 100-1000 nm.
In a preferred embodiment, the Cu2The size of the Te micron disk is 5000-10000 nm.
In a preferred embodiment, the thickness of the gain medium is 100-500 nm.
In a preferred embodiment, any of the above natural hyperbolic metamaterials Cu2Te microdisk random laser, said substrate, Cu2The integrated structure of the Te micron disk and the gain medium is covered with a flexible packaging protection layer.
In a more preferred embodiment, the material of the flexible encapsulation protection layer is at least one of epoxy resin, Polydimethylsiloxane (PDMS), silicone, polyvinyl chloride (PVC), Polyethylene (PE), polypropylene (PP), Polyurethane (PU), Polycarbonate (PC), and polyethylene terephthalate (PET).
In a more preferable embodiment, the thickness of the flexible packaging protective layer is 1-10 μm.
Natural hyperbolic metamaterial Cu2The preparation method of the Te micron disk random laser comprises the following steps:
(1) deposition growth of Cu on growth substrate2A Te micron disk;
(2) the Cu is added2Te microdisk transferred to substrate on said Cu2Depositing a GaTe film on the Te micron disk;
(3) carrying out flexible packaging to obtain the natural hyperbolic metamaterial Cu2Te microdisk random lasers.
In a preferred embodiment, in step (1), the growth substrate deposits and grows Cu2Before a Te micron disk, preprocessing the growth substrate; the pretreatment comprises acetone ultrasonic waveCleaning, absolute ethyl alcohol ultrasonic cleaning or plasma surface cleaning. More preferably, the plasma surface cleaning is cleaning by a nitrogen gun.
In a preferred embodiment, the growth substrate is a copper foam substrate or a plain copper sheet.
In a preferred embodiment, the Cu is deposited and grown on the growth substrate by chemical vapor deposition2A Te micron disk. The evaporation source of the chemical vapor deposition is a Te source or a GaTe source.
In a preferred embodiment, in the step (2), the Cu is added2The Te micron disk is transferred to a substrate, and then a GaTe film is deposited. Wherein, in order to prevent the contamination of the interface, the Cu is added2The specific operation of transferring the Te microdisk onto the substrate is: growing the Cu on a growth substrate2And taking the Te micron disc out of the glove box through a valve of the tube furnace, and then dripping a small amount of the Te micron disc on the substrate through the extraction of a dripper rubber tube dispersed in absolute ethyl alcohol so as to prepare for carrying out magnetron sputtering on the GaTe layer film.
In a preferred embodiment, in the step (2), magnetron sputtering or chemical vapor deposition is adopted to deposit on the Cu2Depositing GaTe film on the Te micron disk. Wherein, in order to prevent contamination of the interface, grown Cu is deposited2And the substrate of the Te micron disk enters the cavity of the magnetron sputtering through the glove box and the magnetron sputtering valve, and then the magnetron sputtering of the GaTe film is carried out.
The target material of the magnetron sputtering is a GaTe target material, and more preferably a 99.99% GaTe target material.
The natural hyperbolic metamaterial Cu2The application of the Te microdisk random laser comprises the application of an LED light-emitting module or a laser imaging display photoelectric device.
Compared with the prior art, the invention has the following advantages and beneficial effects:
the invention relates to natural hyperbolic metamaterial Cu2Te microdisk random laser with Cu2The Te micron disk is a semiconductor medium material with HMM characteristics, and GaTe is used as a gain medium. Wherein, Cu having HMM characteristics2Te micron diskThe visible light can be compressed, high-density optical state distribution is provided, the spontaneous emission transition life of photons is favorably shortened, and high gain is provided for a random laser; the high refractive index of GaTe in the visible light range is more beneficial to reflecting photons to easily form a free resonator, so that the stable formation of the random laser resonator is improved, the energy loss can be reduced by using the GaTe as a gain medium to realize the emission of random laser, and the scattering of the random laser is improved. Therefore, the random laser can obtain stable random laser with higher Q value and low threshold value.
The preparation method adopts a chemical vapor deposition mode to prepare Cu2The Te micron disk forms a semiconductor medium material with HMM characteristics naturally, and the GaTe gain medium is deposited by adopting a magnetron sputtering or chemical vapor deposition mode based on the principle of van der Waals epitaxial growth to realize the natural hyperbolic metamaterial Cu2The Te micron disk random laser is efficiently manufactured and has high yield.
The invention relates to natural hyperbolic metamaterial Cu2The Te micron disk random laser can obtain stable random laser with higher Q value and low threshold, can be used in LED light-emitting modules, laser imaging display, biological probes, speckle-free images and highly telescopic photoelectric devices, and even in the fields of Virtual Reality (VR) or AR (augmented reality), and has wide application prospect.
Drawings
FIG. 1 shows a natural hyperbolic metamaterial Cu of the present invention in an embodiment2A schematic structure diagram of a Te microdisk random laser;
FIG. 2a shows Cu prepared in example 12The Te micron disk has a distribution diagram of real part dielectric coefficient simulated by a first principle of HMM characteristics;
FIG. 2b shows Cu prepared in example 12The Te micron disk has a distribution diagram of imaginary part dielectric coefficient simulated by a first principle of HMM characteristics;
FIG. 3a shows natural hyperbolic metamaterial Cu prepared in example 12Cu in Te microdisk random laser2EDS plot of Te micro-disk;
FIG. 3b shows the natural hyperbolic metamaterial Cu prepared in example 12Te micron diskEDS plot of GaTe thin films in a machine laser;
FIG. 4 shows the natural hyperbolic metamaterial Cu prepared in example 12SEM topography of Te micron disk random laser;
FIG. 5 shows the natural hyperbolic metamaterial Cu prepared in example 12A laser power diagram of the Te micron disk random laser;
Detailed Description
The technical solution of the present invention is further described in detail with reference to the following specific examples, but the scope and implementation of the present invention are not limited thereto. The present invention may be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Also, unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
The invention relates to natural hyperbolic metamaterial Cu2Te micron disk random laser, as shown in figure 1, the natural hyperbolic metamaterial Cu2The Te micron disk random laser comprises a substrate, Cu2A Te micro-disk and a gain medium. Wherein the substrate, Cu2The Te micron disk and the gain medium are sequentially arranged from bottom to top; specifically, the Cu2The Te micro-disk and the gain medium are sequentially deposited on the substrate.
The substrate is any random laser substrate, preferably a sapphire substrate.
In a preferred embodiment, the Cu2The Te micron disk is natural hyperbolic Cu with HMM characteristics2A Te micron disk for providing high gain for the random laser; the gain medium is a GaTe thin film, so that the stable formation of the random laser resonator and the scattering of random laser are improved.
In a preferred embodiment, the Cu2The thickness of the Te micron disk is 100-1000And nm, wherein the thickness of the gain medium is 100-500 nm.
In a particularly preferred embodiment, the Cu2The size of the Te micron disk is 5000-10000 nm.
In addition, the natural hyperbolic metamaterial Cu2In Te micron disk random laser, the substrate and Cu2The Te micron disk and the gain medium are covered with a flexible packaging protective layer on the whole structure, and the whole random laser is subjected to flexible protection such as water vapor protection and external force collision protection.
In a preferred embodiment, the flexible package protective layer is made of a transparent flexible polymer, and includes at least one of epoxy resin, Polydimethylsiloxane (PDMS), silicone, polyvinyl chloride (PVC), Polyethylene (PE), polypropylene (PP), Polyurethane (PU), Polycarbonate (PC), and polyethylene terephthalate (PET).
The thickness of the flexible packaging protective layer is mainly used for realizing flexible protection of the whole random laser, and the specific thickness is not limited. In a preferred embodiment, the thickness of the flexible packaging protective layer is 1-10 μm.
The invention relates to natural hyperbolic metamaterial Cu2The preparation method of the Te microdisk random laser comprises the following steps:
(1) deposition growth of Cu on growth substrate2A Te micron disk;
wherein the growth substrate is a foam copper substrate or a common copper sheet. And, depositing Cu on the growth substrate2Before a Te micron disk, the growth substrate needs to be pretreated; the pretreatment comprises more than one treatment mode of acetone ultrasonic cleaning, absolute ethyl alcohol ultrasonic cleaning and plasma surface cleaning. Preferably, the plasma surface cleaning is performed by using a nitrogen gun.
In a preferred embodiment, the Cu is deposited and grown on the growth substrate by chemical vapor deposition2A Te micron disk.
(2) The Cu is added2Te microdisk transferred to substrate on said Cu2Depositing a GaTe film on the Te micron disk;
wherein, in order to prevent the contamination of the interface, the Cu is added2The specific operation of transferring the Te microdisk onto the substrate is: growing the Cu on a growth substrate2And taking the Te micron disc out of the glove box through a valve of the tube furnace, and then dripping a small amount of the Te micron disc on the substrate through the extraction of a dripper rubber tube dispersed in absolute ethyl alcohol so as to prepare for carrying out magnetron sputtering on the GaTe layer film.
In a preferred embodiment, magnetron sputtering or chemical vapor deposition is adopted to deposit on the Cu2Depositing GaTe film on the Te micron disk. Wherein, in order to prevent contamination of the interface, grown Cu is deposited2And the substrate of the Te micron disk enters the cavity of the magnetron sputtering through the glove box and the magnetron sputtering valve, and then the magnetron sputtering of the GaTe film is carried out.
(3) Carrying out flexible packaging to obtain the natural hyperbolic metamaterial Cu2Te microdisk random lasers.
The invention relates to natural hyperbolic metamaterial Cu2The Te micron disk random laser can obtain stable random laser with higher Q value and low threshold, can be used in LED light-emitting modules, laser imaging display, biological probes, speckle-free images and highly telescopic photoelectric devices, and even in the fields of Virtual Reality (VR) or AR (augmented reality), and has wide application prospect.
The technical solution of the present invention will be described in detail with reference to the following specific examples.
Example 1
Natural hyperbolic metamaterial Cu of the embodiment2The Te micron disk random laser is a random laser device for two-dimensional material assisted growth, and the random laser device sequentially comprises a sapphire substrate and Cu from bottom to top2Te micro-disk and GaTe layer film on sapphire substrate, Cu2The whole structure of the Te micron disk and the GaTe layer film is covered with a flexible packaging protective layer.
Wherein the flexible packaging protective layer is made of Polydimethylsiloxane (PDMS).
The natural hyperbolic metamaterial Cu2The preparation of Te micron disk random laser adopts chemical vapor deposition and radio frequency magnetron sputtering to respectively preparePreparation of Cu2A Te micron disk and a GaTe thin film gain layer.
The specific preparation process flow is as follows:
(1) fixing the foamed copper substrate after absolute ethyl alcohol ultrasonic cleaning on a quartz ark workpiece in a chemical vapor deposition tube type furnace chamber, placing Te of 6mg of an evaporation source on the quartz ark, adjusting a base to be opposite to the evaporation source, adjusting the evaporation source to be 3mm away from the foamed copper substrate, and pre-vacuumizing the background to 5.0 multiplied by 10-4Pa。
(2) Opening Ar/H2Gas flow valve, regulating Ar/H2The flow rate was 3sccm, the molecular pump speed was 45000rpm, and the total gas pressure was adjusted to 0.9 Pa.
(3) Setting temperature variation curve of tube furnace, increasing room temperature (25 deg.C) to 500 deg.C for 50min, increasing 500 deg.C to 700 deg.C for 40min, maintaining the temperature for 10min, and naturally cooling to room temperature to obtain Cu2A Te micron disk.
For prepared Cu2The Te micro-disk was subjected to a first principle simulation with HMM characteristics, and the distribution of real dielectric constant and imaginary dielectric constant thereof are shown in FIGS. 2a and 2b, respectively, where εxAnd εzRepresenting the components of the dielectric coefficients x and z, respectively, if in real permittivity epsilonz>εxThen has the characteristics of HMM 1; if epsilon existsz<εxThen has the HMM2 characteristic. Wherein the 200-370nm range falls within the characteristics of the HMM2, as shown by the shaded portion of FIG. 2 a; whereas the 370-720 range belongs to the characteristics of HMM1, as indicated by the shaded portion of fig. 2 a. The simulation results of fig. 2a and fig. 2b show that the material has HMM characteristics in the visible light range, and the simulation is verified.
(4) After the chemical vapor deposition is finished, the power supply of the tube furnace is turned off, and the Ar/H is turned off2The gas flow valve is closed, the molecular pump and the mechanical pump are closed, and then the sampling valve is opened to take out a sample to enter N2A gas-shielded glove box.
(5) Feeding the prepared sample in the step (4) into a magnetron sputtering furnace cavity from a glove box through a sampling valve, adjusting the autorotation speed of a workpiece rotating frame to be 10rpm, enabling a substrate to be opposite to the surface of the target material, adjusting the distance between the target bases to be 100mm, and pre-treatingVacuum background to 5.0 × 10-4Pa。
(6) And opening an Ar gas flow valve, adjusting the flow rate of Ar to be 3sccm, adjusting the rotating speed of the molecular pump to be 45000rpm, and adjusting the total air pressure to be 0.9 Pa.
(7) And starting a magnetic control power supply to sputter a GaTe target, adjusting the power of the magnetic control power supply to 50W, and depositing and sputtering for 20min to obtain the GaTe film gain layer.
For prepared Cu2X-ray energy Spectroscopy (EDS) analysis of the Te microdisk layer and GaTe thin film gain layer, Cu2The results of EDS analysis of the Te microdisk layer and the GaTe thin film gain layer are shown in fig. 3a and 3b, respectively. As can be seen from FIGS. 3a and 3b, in Cu2In an EDS spectrum of the Te micron disk layer, element distribution comprises Cu and Te; and in the EDS spectrum of the GaTe thin film gain layer, the element distribution includes Te and Ga. The distribution of elements is shown by the EDS analysis, and the successful synthesis of the material is proved.
(8) After deposition is finished, the direct-current power supply is closed, the Ar gas flow valve is closed, the molecular pump and the mechanical pump are closed, and then the sampling valve is opened to take out a sample to enter the N2A gas-shielded glove box.
(9) Packaging the sample obtained in the step (8) in a glove box in an integral flexible protection manner to obtain the natural hyperbolic metamaterial Cu2Te microdisk random lasers.
For prepared natural hyperbolic metamaterial Cu2Te microdisk random laser for observation, SEM topography shown in FIG. 4, Cu2The Te micron disc layer is a GaTe two-dimensional material film, the thickness is 450nm, and the size is 7500 nm; the thickness of the GaTe layer film is about 100 nm; the thickness of the flexible encapsulating cover is about 3 μm.
For prepared natural hyperbolic metamaterial Cu2The Te micron disk random laser carries out characterization of random laser, excites an incident wavelength of 535nm through a micro-area fluorescence test PL emission spectrum, then changes a power test luminous power, and observes generation of the random laser; and simultaneously testing the life time of the random laser. As a result, as shown in FIG. 5, it can be seen from FIG. 5 that the wavelength of the emitted laser light is around 627nm, and there are three peak laser lights and laser lights of different powers (1%, 10% in the direction indicated by the arrow),25%, 50%, 100% increase in order), the laser light is finally shaped from spontaneous emission to stimulated emission at different peak positions.
Example 2
Natural hyperbolic metamaterial Cu of the embodiment2The Te micron disk random laser is a random laser device for two-dimensional material assisted growth, and the random laser device sequentially comprises a sapphire substrate and Cu from bottom to top2Te micro-disk and GaTe layer film on sapphire substrate, Cu2The whole structure of the Te micron disk and the GaTe layer film is covered with a flexible packaging protective layer.
The flexible packaging protective layer is made of epoxy resin.
The natural hyperbolic metamaterial Cu2Preparing Te micron disk random laser, preparing Cu by chemical vapor deposition and radio frequency magnetron sputtering respectively2A Te micron disk and a GaTe thin film gain layer.
The specific preparation process flow is as follows:
(1) fixing the foamed copper substrate after the absolute ethyl alcohol ultrasonic treatment on a quartz ark workpiece in a chemical vapor deposition tube type furnace chamber, placing Te of 6mg of an evaporation source on the quartz ark, adjusting a base to be opposite to the evaporation source, adjusting the evaporation source to be 2mm away from the foamed copper substrate, and pre-vacuumizing the background to 5.0 multiplied by 10-4Pa。
(2) Opening Ar/H2Gas flow valve, regulating Ar/H2The flow rate was 6sccm, the molecular pump speed was 45000rpm, and the total gas pressure was adjusted to 0.8 Pa.
(3) Setting temperature variation curve of tube furnace, increasing room temperature (25 deg.C) to 500 deg.C for 50min, increasing 500 deg.C to 750 deg.C for 40min, maintaining the temperature for 10min, and naturally cooling to room temperature to obtain Cu2A Te micron disk.
For prepared Cu2The Te micron disk is subjected to first principle simulation with HMM characteristics, wherein the range of 200-.
(4) After the chemical vapor deposition is finished, the power supply of the tube furnace is closed,Ar/H is turned off2The gas flow valve is closed, the molecular pump and the mechanical pump are closed, and then the sampling valve is opened to take out a sample to enter N2Gas-shielded glove box protection.
(5) Feeding the sample prepared in the step (4) into a magnetron sputtering furnace cavity from a glove box through a sampling valve, adjusting the rotation speed of a workpiece rotating frame to 20rpm, enabling a substrate to be opposite to the surface of the target material, adjusting the distance between the target base and the target material to 100mm, and pre-vacuumizing to the background vacuum of 3.0 multiplied by 10-4Pa。
(6) And opening an Ar gas flow valve, adjusting the flow rate of Ar to be 4sccm, adjusting the rotating speed of the molecular pump to be 45000rpm, and adjusting the total air pressure to be 0.7 Pa.
(7) And starting a magnetic control power supply to sputter a GaTe target, adjusting the power of the magnetic control power supply to 40W, and depositing and sputtering for 20min to obtain the GaTe film gain layer.
For prepared Cu2X-ray energy Spectroscopy (EDS) analysis of the Te microdisk layer and GaTe thin film gain layer revealed by EDS analysis at Cu2The successful synthesis of the material is proved by the element distribution in the EDS spectrum of the Te micron disk layer comprising Cu and Te and the element distribution in the EDS spectrum of the GaTe thin film gain layer comprising Te and Ga.
(8) After deposition is finished, the direct-current power supply is closed, the Ar gas flow valve is closed, the molecular pump and the mechanical pump are closed, and then the sampling valve is opened to take out a sample to enter the N2A gas-shielded glove box.
(9) Packaging the sample obtained in the step (8) in a glove box in an integral flexible protection manner to obtain the natural hyperbolic metamaterial Cu2Te microdisk random lasers.
For prepared natural hyperbolic metamaterial Cu2SEM observation of Te micron disk random laser, and Cu shown in the observation result2The Te micron disk layer is a GaTe two-dimensional material film, Cu2The thickness of the Te micron disk is 500nm, and the size is 7500 nm; the thickness of the GaTe layer film is about 150 nm; the thickness of the flexible encapsulating cover is about 4 μm.
For prepared natural hyperbolic metamaterial Cu2The Te micron disk random laser carries out the characterization of random laser, the incident wavelength is excited to 535nm through the micro-area fluorescence test PL emission spectrum, and then the power test emission is changedOptical power, observing the generation of random laser light; and simultaneously testing the life time of the random laser. The characterization result shows that the laser wavelength of the emitted light is about 627nm, laser with three peak positions exists, and under the excitation condition of different power lasers (sequentially increased by 1%, 10%, 25%, 50% and 100%), laser with different peak positions is finally emitted from spontaneous emission to stimulated emission.
Example 3
Natural hyperbolic metamaterial Cu of the embodiment2The Te micron disk random laser is a random laser device for two-dimensional material assisted growth, and the random laser device sequentially comprises a sapphire substrate and Cu from bottom to top2Te micro-disk and GaTe layer film on sapphire substrate, Cu2The whole structure of the Te micron disk and the GaTe layer film is covered with a flexible packaging protective layer.
The flexible packaging protective layer is made of carbonic ester (PC).
The natural hyperbolic metamaterial Cu2Preparing Te micron disk random laser, preparing Cu by chemical vapor deposition and radio frequency magnetron sputtering respectively2A Te micron disk and a GaTe thin film gain layer.
The specific preparation process flow is as follows:
(1) fixing the pretreated foamy copper substrate on quartz canoe workpiece in CVD tube furnace chamber, placing evaporation source of 5mg Te in quartz canoe, adjusting substrate to face evaporation source, adjusting evaporation source to 3mm from foamy copper substrate, pre-vacuumizing to 3.0 × 10-4Pa。
(2) Opening Ar/H2Gas flow valve, regulating Ar/H2The flow rate was 3sccm, the molecular pump speed was 45000rpm, and the total gas pressure was adjusted to 0.9 Pa.
(3) Setting the temperature change curve of the tubular furnace, increasing the temperature from room temperature (25 ℃) to 500 ℃ after 50min, increasing the temperature from 500 ℃ to 750 ℃ after 40min, maintaining the temperature for 10min, and naturally cooling to room temperature to obtain Cu with the size of 5000-10000nm2A Te micron disk.
For prepared Cu2The Te micron disk was subjected to a first principles simulation with HMM characteristics, wherein the 200-370nm range belongs to the characteristic of HMM2And the 370-720 range belongs to the characteristics of the HMM1, which indicates that the simulation shows that the material has the HMM characteristics in the visible light range, and the verification of the simulation is obtained.
(4) After the chemical vapor deposition is finished, the power supply of the tube furnace is turned off, and the Ar/H is turned off2The gas flow valve is closed, the molecular pump and the mechanical pump are closed, and then the sampling valve is opened to take out a sample to enter N2Gas-shielded glove box protection.
(5) The prepared sample is sent into a magnetron sputtering furnace cavity from a glove box through a sampling valve, the autorotation speed of a workpiece rotating stand is adjusted to be 10rpm, a substrate is enabled to be opposite to the surface of a target material, the target base distance is adjusted to be 100mm, and the pre-pumping background vacuum is adjusted to be 3.0 multiplied by 10-4Pa。
(6) And opening an Ar gas flow valve, adjusting the flow rate of Ar to be 3sccm, adjusting the rotating speed of the molecular pump to be 45000rpm, and adjusting the total air pressure to be 0.7 Pa.
(7) And starting a magnetic control power supply to sputter a GaTe target, adjusting the power of the magnetic control power supply to 50W, and depositing and sputtering for 20min to obtain the GaTe film gain layer.
For prepared Cu2X-ray energy Spectroscopy (EDS) analysis of the Te microdisk layer and GaTe thin film gain layer revealed by EDS analysis at Cu2The successful synthesis of the material is proved by the element distribution in the EDS spectrum of the Te micron disk layer comprising Cu and Te and the element distribution in the EDS spectrum of the GaTe thin film gain layer comprising Te and Ga.
(8) After deposition is finished, the direct-current power supply is closed, the Ar gas flow valve is closed, the molecular pump and the mechanical pump are closed, and then the sampling valve is opened to take out a sample to enter the N2A gas-shielded glove box.
(9) Packaging the sample in a glove box in an integral flexible protection manner to obtain the natural hyperbolic metamaterial Cu2Te microdisk random lasers.
For prepared natural hyperbolic metamaterial Cu2SEM observation of Te micron disk random laser, and Cu shown in the observation result2The Te micron disk layer is a GaTe two-dimensional material film, Cu2The thickness of the Te micron disk is 500nm, and the size is 8000 nm; the thickness of the GaTe layer film is about 150 nm; the thickness of the flexible encapsulating cover is about 3 μm.
For prepared natural hyperbolic metamaterial Cu2The Te micron disk random laser carries out characterization of random laser, excites an incident wavelength of 535nm through a micro-area fluorescence test PL emission spectrum, then changes a power test luminous power, and observes generation of the random laser; and simultaneously testing the life time of the random laser. The characterization result shows that the laser wavelength of the emitted light is about 627nm, laser with three peak positions exists, and under the excitation condition of different power lasers (sequentially increased by 1%, 10%, 25%, 50% and 100%), laser with different peak positions is finally emitted from spontaneous emission to stimulated emission.
Various technical features of the above embodiments may be combined arbitrarily, and for the sake of brevity, all possible combinations of the technical features of the above embodiments are not described in this specification. However, as long as there is no contradiction between combinations of these technical features, the scope of the present specification should be considered as being described. Furthermore, the above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention.
It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. Natural hyperbolic metamaterial Cu2The Te microdisk random laser is characterized by comprising a substrate and Cu2Te micron disk, gain medium, substrate, Cu2The Te micron disk and the gain medium are sequentially arranged from bottom to top;
the Cu2The Te micron disk is natural hyperbolic Cu2A Te micron disk; the gain medium is a GaTe thin film.
2. The natural hyperbolic metamaterial Cu according to claim 12The Te microdisk random laser is characterized in that the substrate is a sapphire substrate.
3. The natural hyperbolic metamaterial Cu according to claim 12Te microdisk random laser, characterized in that the Cu2The thickness of the Te micron disk is 100-1000 nm.
4. The natural hyperbolic metamaterial Cu according to claim 12The Te micron disk random laser is characterized in that the thickness of the gain medium is 100-500 nm.
5. The natural hyperbolic metamaterial Cu according to any one of claims 1-42Te microdisk random laser, characterized in that the substrate, Cu2The integrated structure of the Te micron disk and the gain medium is covered with a flexible packaging protection layer.
6. The natural hyperbolic metamaterial Cu according to claim 52The Te microdisk random laser is characterized in that the flexible packaging protective layer is made of more than one of epoxy resin, polydimethylsiloxane, silica gel, polyvinyl chloride, polyethylene, polypropylene, polyurethane, polycarbonate and polyethylene terephthalate.
7. The natural hyperbolic metamaterial Cu according to claim 52The Te microdisk random laser is characterized in that the thickness of the flexible packaging protective layer is 1-10 mu m.
8. Natural hyperbolic metamaterial Cu2The preparation method of the Te microdisk random laser is characterized by comprising the following steps of:
(1) deposition growth of Cu on growth substrate2A Te micron disk;
(2) the Cu is added2Te microdisk transferred to substrate on said Cu2Depositing a GaTe film on the Te micron disk;
(3) carrying out flexible packaging to obtain the natural hyperbolic metamaterial Cu2Te micron disk random laserA device.
9. The natural hyperbolic metamaterial Cu according to claim 82The preparation method of the Te microdisk random laser is characterized in that in the step (1), the growth substrate deposits and grows Cu2Before a Te micron disk, preprocessing the growth substrate; the pretreatment comprises acetone ultrasonic cleaning, absolute ethyl alcohol ultrasonic cleaning or plasma surface cleaning.
10. The natural hyperbolic metamaterial Cu as in any one of claims 1-72The application of the Te microdisk random laser is characterized by comprising an LED light-emitting module or a laser imaging display photoelectric device.
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