CN101403094A - Method for growth of type n ZnMgO Ga semiconductor film on flexible substrate - Google Patents
Method for growth of type n ZnMgO Ga semiconductor film on flexible substrate Download PDFInfo
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- CN101403094A CN101403094A CNA2008101221129A CN200810122112A CN101403094A CN 101403094 A CN101403094 A CN 101403094A CN A2008101221129 A CNA2008101221129 A CN A2008101221129A CN 200810122112 A CN200810122112 A CN 200810122112A CN 101403094 A CN101403094 A CN 101403094A
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Abstract
The invention relates to a method for growing an n-typed ZnMgO Ga-mixed semiconductor film on a flexible substrate, which adopts a pulsed laser deposition method. The method comprises the following steps: conducting ball milling to ZnO, MgO and Ga2O3 powder, uniformly mixing, press forming, sintering at 1000-1300 DEG C to prepare a ZnMgO Ga-mixed ceramic target, putting the ceramic target and the washed flexible substrate into a growth chamber of pulsed laser deposition equipment, and obtaining the n-typed ZnMgO Ga-mixed semiconductor film after undergoing pulsed laser deposition. The method of the invention is simple, which can grow the n-typed ZnMgO Ga-mixed semiconductor film with excellent electric performance at room temperature. The prepared film is transparent, conductive, light in weight, foldable and not easy to break, which can be widely applied to manufacturing a flexible luminescent device, a plastic liquid crystal display and an amorphous silicon solar battery with a flexible substrate and can also be used in vinyl house, automobile glass and civil building glass film as a transparent insulated material.
Description
Technical field
The present invention relates to the method that n type ZnMgO mixes growth of type n ZnMgO Ga semiconductor film on Ga Semiconductor Film Growth method, the especially flexible substrate.
Background technology
ZnO film is after indium tin oxide (ITO) film, a kind of novel broad stopband of coming out newly developed, has the n N-type semiconductorN transparent conductive film of high-transmission rate and low-resistivity in visible-range.Advantages such as zinc oxide also has that material source is very abundant, cheap, nontoxic, the preparation method is various, easy realization doping and low-temperature epitaxy.The low-resistance characteristic of ZnO film makes it become a kind of important electrode materials, as the electrode of solar cell, liquid crystal cell electrode etc.And high transmission rate and big energy gap make its window material that can be used as solar cell, low-loss optically wave guide material etc.Its luminosity and electron radiation stability make it become a kind of good monochromatic field emission low pressure flat-panel screens material, and in electroluminescence device fields such as UV-light diode lasers the potential application prospect are arranged.
In all doped elements, because Ga and Zn atomic radius are the most approaching, and the bond distance of Ga-O key and Zn-O key is also very approaching, so the lattice distortion of Ga atomic substitutions Zn atom pairs ZnO is also less, and this helps mixing of Ga.Secondly in the growth for Thin Film process, the Al reactive behavior is higher, easily oxidation, and Ga is difficult for oxidation with respect to Al, and this is the another one advantage of Ga as doped element.So Ga is considered to the most promising doped element.In addition owing to mix the energy gap that Mg can effectively regulate ZnO among the ZnO, make its aspect two-dimensional electron gas, the modulation doping, multi-heterostructure-layers, quantum well structures aspect have important purposes.
The nesa coating for preparing on flexible substrate has the advantage of many uniquenesses, as light weight, collapsible, be difficult for broken, be easy to big area production, be convenient to transportation etc.This film can be widely used in making flexible luminescent device, plastic liquid crystal indicating meter and flexible substrate non-crystal silicon solar cell, also can be used as transparent heat-insulated lagging material and is used for plastic greenhouse, vehicle glass and covil construction adhering film to glass.
If can on flexible substrate, prepare the frontier that controlled n type zno-based semiconductor film will be expected to open up the zno-based semiconductor device application.
Summary of the invention
The method that the purpose of this invention is to provide a kind of flexible substrate growth of type n ZnMgO Ga semiconductor film.
The method of flexible substrate growth of type n ZnMgO Ga semiconductor film of the present invention, employing be pulsed laser deposition, may further comprise the steps:
1) weighing ZnO, MgO, Ga
2O
3Powder, ZnO, MgO and Ga
2O
3Mass ratio be 87: 10: 3, with the powder ball milling mix, compression moulding, then at 1000～1300 ℃ of sintering temperatures, make ZnMgO and mix the Ga ceramic target;
2) ceramic target that step 1) is made and washed flexible substrate are put into pulsed laser deposition device growth room, and the distance between target and the substrate remains 4～6cm, and growth room's vacuum tightness is evacuated to 10 at least
-3Pa, the growth room feeds O
2Gas, control pressure is 0.005～0.1Pa, keeps room temperature, opens laser apparatus, allows laser beam focus on target surface ablation target, forms twilight sunset, is deposited on the substrate, makes n type ZnMgO and mixes the Ga semiconductor film.
Above-mentioned flexible substrate can be polyphenyl dioctyl phthalate glycol ester (PET), polyimide or polycarbonate.
Among the present invention, said ZnO, MgO and Ga
2O
3Purity 〉=99.99%.The thickness of film can be regulated by changing depositing time.
Beneficial effect of the present invention is:
1) method is simple, and the good n type of electric property of can at room temperature growing ZnMgO mixes the Ga semiconductor film; Its carrier concentration is 10
20～10
21Cm
-3
2) the film electrically conducting transparent that makes, light weight, collapsible, difficult broken.This film can be widely used in making flexible luminescent device, plastic liquid crystal indicating meter and flexible substrate non-crystal silicon solar cell, also can be used as transparent heat-insulated lagging material and is used for plastic greenhouse, vehicle glass and covil construction adhering film to glass.
Description of drawings
Fig. 1 is the pulsed laser deposition device synoptic diagram that adopts according to the inventive method, and among the figure: 1 is laser apparatus; 2 is the growth room; 3 is target; 4 is substrate;
Fig. 2 is the transmission spectrum that the n type ZnMgO that makes mixes the Ga semiconductor film.
Embodiment
Below in conjunction with Fig. 1, the present invention is further illustrated by example.
Embodiment 1
The method of flexible substrate growth of type n ZnMgO Ga semiconductor film, step is as follows:
1) the preparation weighing purity of ceramic target is 99.99% ZnO, MgO and Ga
2O
3Powder, ZnO, MgO and Ga
2O
3Mass ratio be 87: 10: 3.Load weighted powder is poured in the ball grinder that agate ball is housed, and ball milling is 15 hours on ball mill, and purpose is with ZnO, MgO, Ga
2O
3Powder mixes is also refinement to a certain extent evenly.Then raw material is separated and dried, add binding agent and grind compression moulding.The idiosome of moulding is put into sintering oven, plain through 800 ℃ of rows, make the binding agent volatilization, be warming up to 1200 ℃ of sintering again 2 hours, obtain ZnMgO and mix the Ga ceramic target.
2) preparation of film is contained in ceramic target on the target frame, embeds then in the target holder of pulsed laser deposition device.The PET substrate is fixed on the sample table after cleaning, puts into growth room 2.The distance of regulating substrate 4 and target 3 is 4.5cm, and with baffle plate substrate and target is separated.Growth room's vacuum tightness is evacuated to 2 * 10
-3Pa, substrate keeps room temperature, feeds O
2Gas, pressure is controlled at 0.03Pa.Open laser apparatus 1 (pulsed laser energy is 180mJ, frequency 3Hz), pre-deposition 2min removes staining of target material surface, the baffle plate of outwarding winding then, deposit film.Substrate and target low speed rotation in the deposition process are to improve the homogeneity of film.Depositing time is 60min, the thick 220nm that is about of film.
The ZnMgO that is grown on the flexible substrate that makes mixes Ga semiconductor film demonstration n type conduction: carrier concentration is 1.10 * 10
21Cm
-3, hall mobility is 7.71cm
2/ V.s, resistivity is 7.346*10
-4Ω cm.The transmission spectrum of Fig. 2 shows that the ZnMgO that makes mixes the Ga film and surpasses 80% in the visible region average transmittance.
Embodiment 2
Method is with embodiment 1, and difference is: the sintering temperature that ZnMgO mixes the Ga ceramic target is 1000 ℃, and flexible substrate is a polyimide.Distance between target and the substrate remains 6cm, and pressure is controlled at 0.1Pa, and depositing time is 40min, the thick 140nm of being about of the film that makes.
The ZnMgO that this example is grown on the flexible substrate mixes Ga semiconductor film electrically conducting transparent, and carrier concentration is 4.64 * 10
20Cm
-3, hall mobility is 4.32cm
2/ V.s, resistivity is 3.111*10
-3Ω cm.
Embodiment 3
Method is with embodiment 1, and difference is: the sintering temperature that ZnMgO mixes the Ga ceramic target is 1300 ℃, and flexible substrate is a polycarbonate.Distance between target and the substrate remains 4cm, and pressure is controlled at 0.005Pa, and depositing time is 20min, the thick 70nm of being about of the film that makes.
The ZnMgO that is grown on the flexible substrate mixes Ga semiconductor film electrically conducting transparent, and carrier concentration is 1.62 * 10
20Cm
-3, hall mobility is 1.27cm
2/ V.s, resistivity is 3.033*10
-2Ω cm.
Claims (3)
1. the method for flexible substrate growth of type n ZnMgO Ga semiconductor film may further comprise the steps:
1) weighing ZnO, MgO, Ga
2O
3Powder, ZnO, MgO and Ga
2O
3Mass ratio be 87: 10: 3, with the powder ball milling mix, compression moulding, then at 1000～1300 ℃ of sintering temperatures, make ZnMgO and mix the Ga ceramic target;
2) ceramic target that step 1) is made and washed flexible substrate are put into pulsed laser deposition device growth room, and the distance between target and the substrate remains 4～6cm, and growth room's vacuum tightness is evacuated to 10 at least
-3Pa, the growth room feeds O
2Gas, control pressure is 0.005～0.1Pa, keeps room temperature, opens laser apparatus, allows laser beam focus on target surface ablation target, forms twilight sunset, is deposited on the substrate, makes n type ZnMgO and mixes the Ga semiconductor film.
2. the method for flexible substrate growth of type n ZnMgO Ga semiconductor film according to claim 1 is characterized in that said flexible substrate is polyphenyl dioctyl phthalate glycol ester, polyimide or polycarbonate.
3. the method for flexible substrate growth of type n ZnMgO Ga semiconductor film according to claim 1 is characterized in that ZnO, MgO and Ga
2O
3Purity 〉=99.99%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008101221129A CN101403094A (en) | 2008-10-28 | 2008-10-28 | Method for growth of type n ZnMgO Ga semiconductor film on flexible substrate |
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|---|---|---|---|
| CNA2008101221129A CN101403094A (en) | 2008-10-28 | 2008-10-28 | Method for growth of type n ZnMgO Ga semiconductor film on flexible substrate |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101818324A (en) * | 2010-04-13 | 2010-09-01 | 浙江大学 | Method for growing n-type ZnMgO:Ga transparent conductive film by flexible substrate |
| CN102280526A (en) * | 2011-02-21 | 2011-12-14 | 中国科学院半导体研究所 | Method for improving solar cell efficiency and preparing efficient solar cell |
| CN111446042A (en) * | 2020-03-11 | 2020-07-24 | 华南理工大学 | High-performance transparent conductive film and preparation method and application thereof |
-
2008
- 2008-10-28 CN CNA2008101221129A patent/CN101403094A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101818324A (en) * | 2010-04-13 | 2010-09-01 | 浙江大学 | Method for growing n-type ZnMgO:Ga transparent conductive film by flexible substrate |
| CN102280526A (en) * | 2011-02-21 | 2011-12-14 | 中国科学院半导体研究所 | Method for improving solar cell efficiency and preparing efficient solar cell |
| CN111446042A (en) * | 2020-03-11 | 2020-07-24 | 华南理工大学 | High-performance transparent conductive film and preparation method and application thereof |
| CN111446042B (en) * | 2020-03-11 | 2021-09-21 | 华南理工大学 | High-performance transparent conductive film and preparation method and application thereof |
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Open date: 20090408 |