CN1873889A - Flat panel display with circular embedded typed structure of back grating - Google Patents
Flat panel display with circular embedded typed structure of back grating Download PDFInfo
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- CN1873889A CN1873889A CN 200610017674 CN200610017674A CN1873889A CN 1873889 A CN1873889 A CN 1873889A CN 200610017674 CN200610017674 CN 200610017674 CN 200610017674 A CN200610017674 A CN 200610017674A CN 1873889 A CN1873889 A CN 1873889A
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Abstract
The flat panel display includes cathode faceplate, anode faceplate, vacuum cavity sealed by surrounded glass frame, anodic conducting layer photo etched on anode faceplate, phosphor powder layer prepared on up face of the anodic conducting layer, structure of supporting wall, and subsidiary components for getter sealed in the vacuum cavity. Being prepared on cathode faceplate, circular embedded type back grid structure is in use for controlling electron emission of Nano carbon tubes. The back grid structure is located under cathode of Nano carbon tubes and at same plane. The circular embedded part of the structure is surrounded by cathode of Nano carbon tubes. Advantages are: reliable and steady producing procedure, simple technique and structure.
Description
Technical field
The invention belongs to the mutual crossing domain in Display Technique field, plane, microelectronics science and technology field, vacuum science and technical field and nanoscale science and technology field, relate to the element manufacturing of panel field emission display, be specifically related to the content of element manufacturing aspect of the panel field emission display of carbon nanotube cathod, specially refer to field emission flat-panel screens a kind of circular embedded back grid structure, carbon nanotube cathod and manufacture craft thereof.
Background technology
Flat-panel monitor is a kind of important man-machine interface, has occupied crucial status in the high speed development process of information technology.Flat-panel monitor this year has become the direction of Display Technique development with its high definition, high image quality, big picture, panelized, advantage such as the visual angle is wide, thickness is little, and is in light weight.The panel field emission display that utilizes carbon nanotube cathod to make then is a kind of emerging planar device, have plurality of advantages such as high brightness, high definition, complanation fully, wide visual angle, slimming, it is used more and more widely, has very wide development space.
Carbon nano-tube has unique geometric shape, and little tip curvature radius and high mechanical strength can be launched a large amount of electronics under the alive outside effect, have become novel excellent cathode emission material.When on the control grid, applying under the situation of appropriate voltage, will form powerful electric field strength on the surface of carbon nanotube cathod, force carbon nano-tube to launch a large amount of electronics, just awkward silence at a meeting causes the emission phenomenon.But in the process of carbon nanotube cathod emitting electrons, not all cathode material is emitting electrons evenly, but it is maximum in the marginal position electrons emitted of carbon nanotube cathod, the electric field strength that its surface forms is also maximum, middle position electrons emitted at carbon nanotube cathod then will be lacked relatively, perhaps emitting electrons not, the phenomenon that this just unique marginal position is launched a large amount of electronics.Is so how making full use of this unique phenomenon, better to make the service of new display spare? this is the realistic problem that the researcher is worth thinking.
In order to reduce the production cost of integral device, so that can combine with the integrated drive electronics of routine, the field emission display device of making three-stage structure has become a kind of inevitable choice.In the carbon nanotube cathod flat-panel display device of three-stage structure, grid is a relatively more crucial element, it plays the necessary control effect to the electronics emission of carbon nanotube cathod, and whether good the and making that badly also directly affects integral device of grid structure is successful.At present, most flat-panel display device has all selected grid structure to be positioned at the version of carbon nanotube cathod top, the strong control action of grid structure is obvious, manufacture craft is fairly simple, but formed grid current is bigger, operating voltage is higher a bit, and relatively stricter for the requirement of manufacturing materials, this is its disadvantage.Therefore, the manufacture craft of how selecting the grid structure form that is fit to and selecting to be fit to is exactly the realistic problem that the researcher faces.
In addition, not influencing as far as possible under the prerequisite of image quality, also need further to reduce the cost of manufacture of flat device; When can carrying out large-area element manufacturing, it is complicated to need also to make that device fabrication processes avoids, and helps carrying out business-like large-scale production.
Summary of the invention
The objective of the invention is to overcome the shortcoming that exists in the above-mentioned flat-panel display device and provide a kind of with low cost, manufacturing process is reliable and stable, be made into the power height, the flat-panel monitor and the manufacture craft thereof of circular embedded back grid structure simple in structure.
The object of the present invention is achieved like this:
A kind of flat-panel monitor that has circular embedded back grid structure, comprise by the negative electrode panel, anode plate and all around glass enclose the sealed vacuum chamber that frame constitutes, the phosphor powder layer on anode conductive layer at anode conductive layer that photoetching is arranged on the anode plate and preparation, be located at the supporting wall structure between negative electrode panel and the anode plate and be located at getter subsidiary component in the sealed vacuum chamber, on the negative electrode panel, be manufactured with the circular embedded back grid structure that is used for the emission of controlling carbon nanotube electronics, circular embedded back grid structure be positioned at carbon nanotube cathod under and same plane, the circular embedded part of circular embedded back grid structure by carbon nanotube cathod institute around.
Describedly have circular embedded back grid structure and comprise the negative electrode panel, be located at the grid conducting layer on the negative electrode panel, be located at the dielectric isolation layer on the grid conducting layer, the contact hole that exists on the dielectric isolation layer, be located at the circular grid layer on the dielectric isolation layer, insulating cover above the circular grid layer, be located at cathode conductive layer and the cathode leg layer on the cathode conductive layer on the dielectric isolation layer and be located at carbon nanotube cathod layer on the cathode leg layer, wherein cathode conductive layer and cathode leg layer are interconnected, keep apart mutually with circular grid layer, contact hole is connected with each other grid conducting layer below the dielectric isolation layer and the circular grid layer above the dielectric isolation layer
Described grid conducting layer is tin indium oxide rete or gold, silver, molybdenum, tungsten, aluminium, copper, iron, cobalt, nickel, chromium metal level, dielectric isolation layer is polyimide layer, silicon dioxide layer or insulation paste layer, it is circular having contact hole on the dielectric isolation layer, grid conducting layer, circular grid layer and to be arranged in the metal that contact hole is used to connect all be with a kind of metal, in contact hole, prepare certain thickness metal, with the last plane of the last plane of guaranteeing contact hole and dielectric isolation layer on same plane.
The described layer of metal layer of preparing on dielectric isolation layer is divided into three parts after etching, and this three part all is positioned at the top of dielectric isolation layer, three part metals layers after the etching are respectively: circular grid layer, cathode conductive layer and cathode leg layer, circular grid layer presents a kind of discoid, be positioned at the centre position of cathode conductive layer, be not communicated with mutually with cathode conductive layer, be interconnected with the contact hole that is positioned on the dielectric isolation layer, the area of circular grid layer is bigger than the area of contact hole, and the center of circle of this contact hole overlaps with the center of circle of circular grid layer, cathode conductive layer be positioned at circular grid layer around, present list structure, and the trend of the trend of cathode conductive layer and grid conducting layer is vertical mutually.
Described insulating cover is polyimide layer, silicon dioxide layer or insulation paste layer, exists the carbon nanotube cathod layer above the cathode conductive layer, and the carbon nanotube cathod layer is positioned on the cathode conductive layer, be looped around circular grid layer around.
A kind of manufacture craft that has the carbon nanotube field emission flat-panel monitor of circular embedded back grid structure, manufacture craft is as follows:
1), the making of negative electrode panel: whole glass is carried out cutting, remove surface dirt and impurity, form the negative electrode panel;
2), the making of grid conducting layer: evaporation layer of metal on the negative electrode panel, this metal level covers the negative electrode panel; In conjunction with conventional photoetching process, metal level is carried out etching then, form grid conducting layer;
3), the making of dielectric isolation layer: on the negative electrode panel, prepare dielectric isolation layer; The preparation of this dielectric isolation layer is finished in conjunction with spin coated technology, through 375 ℃ ± 5 ℃ high temperature baking process, the dielectric isolation layer for preparing is cured then;
4), the making of contact hole: the reactive ion etching process in conjunction with conventional, polyimide layer is carried out etching, form circular contact hole;
5), the filling of contact hole: in conjunction with conventional evaporation process, evaporation metal once more on polyimide layer is filled contact hole, until fill full till, with the last plane of the last plane of guaranteeing contact hole and dielectric isolation layer on same plane, without any depressed phenomenon; In conjunction with conventional photoetching process, unnecessary metal level is etched away then;
6), the making of circular grid layer, cathode conductive layer, cathode leg layer: metal level of evaporation on dielectric isolation layer; In conjunction with conventional photoetching process, metal level is carried out etching, metal level is divided into three parts, and this three part is all in the same plane, be positioned at the top of dielectric isolation layer; Three part metals layers are respectively: circular grid layer, cathode conductive layer and cathode leg layer; Wherein cathode conductive layer and cathode leg layer are interconnected, but all keep apart mutually with circular grid layer; Round grid layer presents a kind of discoid, is positioned at the centre position of cathode conductive layer, but is not communicated with mutually with cathode conductive layer, but is interconnected with the contact hole that is positioned on the dielectric isolation layer; The area of circular grid layer is bigger than the area of contact hole, and the center of circle of this contact hole overlaps with the center of circle of circular grid layer; Cathode conductive layer be positioned at circular grid layer around, present list structure generally, and the trend of the trend of cathode conductive layer and grid conducting layer is orthogonal;
7), the making of insulating cover: prepare insulating cover at circular grid layer with above the cathode leg layer; Its preparation can be finished in conjunction with spin coated technology, through 375 ℃ ± 5 ℃ high temperature baking process, the insulating cover for preparing is cured then; Insulating cover covers circular grid layer and cathode leg layer fully, and does not cover cathode conductive layer;
8), the making of carbon nanotube cathod layer: the silk-screen printing technique in conjunction with conventional is printed on carbon nanotube cathod on the cathode conductive layer formation carbon nanotube cathod layer; The carbon nanotube cathod layer is positioned on the cathode conductive layer, but be not all to be covered with cathode conductive layer, but be looped around circular grid layer around, the cross one another zone of cathode conductive layer and grid conducting layer just, remaining zone does not then have carbon nanotube cathod;
10), the making of anode glass panel: whole plate glass is carried out cutting, produce the anode glass panel;
12), the making of anode electrode layer: evaporation one deck tin indium oxide rete on the anode glass panel; In conjunction with conventional photoetching process, tin indium oxide rete is carried out etching, form anode electrode layer;
13), the making of insulation paste layer: in conjunction with silk-screen printing technique, non-display area printing insulation paste layer at anode electrode layer, through overbaking, baking temperature: 150 ℃, retention time: 5 minutes, afterwards, be placed on and carry out high temperature sintering in the sintering furnace, sintering temperature: 580 ℃, the retention time: 10 minutes;
14), the making of phosphor powder layer: in conjunction with silk-screen printing technique, phosphor powder layer is printed in the viewing area on anode electrode layer; In the middle of baking oven, toast baking temperature: 120 ℃, the retention time: 10 minutes;
15), device assembling: cathode glass faceplate, anode glass panel, supporting wall structure glass are enclosed frame are assembled together, and getter is put in the middle of the cavity, fix with glass powder with low melting point,
16), finished product is made: the device that has assembled is carried out following packaging technology: toast in the middle of the sample device is put into baking oven; Put into sintering furnace and carry out high temperature sintering; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
The present invention has following good effect:
Main characteristics among the present invention are to have made circular embedded back grid structure, and have made and have field emission flat light-emitting display device circular embedded back grid structure, carbon nanotube cathod.
At first, the grid structure in the circular embedded back grid structure among the present invention mainly is positioned at the below of carbon nanotube cathod, launches for the electronics of carbon nanotube cathod to play strong control action.When after applying appropriate voltage on the grid, carbon nanotube cathod will be launched a large amount of electronics, electrons emitted under the high-tension effect of anode, to the phosphor powder layer high-speed motion, impact fluorescence bisque and send visible light; On the one hand, the carbon nanotube cathod electrons emitted is the impact fluorescence bisque without the control gate electrode structure and directly, this has also just reduced the probability of control grid traps electrons, thereby reduced the size of grid current, reduce working voltage of device effectively, helped further improving the display brightness of integral device; On the other hand, it is the making of just carrying out carbon nanotube cathod in the final step technology of the embedded back grid structure of unitary circular, the making that is to say carbon nanotube cathod is not subjected to the influence of other device technology, also just greatly reduce the damage of carbon nanotube cathod, improved the power that is made into of integral device.
Secondly, in the circular embedded back grid structure in the present invention, in the polyimide insulative separator, there is a contact hole, grid conducting layer below the dielectric isolation layer and the circular grid layer above the dielectric isolation layer are connected with each other, make when further reducing grid voltage, can also increase the emission area of carbon nanotube cathod effectively; This contact hole and grid conducting layer, circular grid layer all are applied to a kind of metal, can effectively guarantee good Ohmic contact like this; In addition, in contact hole, also prepared certain thickness metal, the last plane of guaranteeing the last plane of contact hole and dielectric isolation layer is on same plane, without any depressed phenomenon, so both avoided loose contact, also avoided simultaneously causing the electronics emission of two-level structure, i.e. the grid out-of-control phenomenon.
The 3rd, in the circular embedded back grid structure in the present invention, circular grid layer presents a kind of discoid, is positioned at the centre position of cathode conductive layer, but is not communicated with mutually with cathode conductive layer; And carbon nanotube cathod is positioned on the cathode conductive layer, be looped around circular grid layer around.Like this, the contact area of grid structure and carbon nanotube cathod can be increased on the one hand effectively, unique cold cathode emission phenomenon of a large amount of electronics of edge-emission of carbon nanotube cathod can be made full use of on the other hand.
In addition, in the circular embedded back grid structure in the present invention, do not adopt special structure fabrication material, do not adopt special device making technics yet, this has just further reduced the cost of manufacture of whole flat-panel display device to a great extent, simplify the manufacturing process of device, can carry out large-area element manufacturing, helped carrying out business-like large-scale production.
Description of drawings
Fig. 1 has provided the vertical structure schematic diagram of circular embedded back grid structure;
Fig. 2 has provided the transversary schematic diagram of circular embedded back grid structure;
Fig. 3 has provided and has had structural representation circular embedded back grid structure, the carbon nanotube field emission flat-panel screens.
Embodiment
The present invention includes by negative electrode panel 1, anode plate 10 and all around glass enclose the sealed vacuum chamber that frame 14 is constituted, the phosphor powder layer 13 on anode conductive layer 11 at anode conductive layer 11 that photoetching is arranged on the anode plate 10 and preparation, be located at the supporting wall structure 15 between negative electrode panel 1 and the anode plate 10 and be located at getter subsidiary component 16 in the sealed vacuum chamber, on negative electrode panel 1, be manufactured with the circular embedded back grid structure that is used for the emission of controlling carbon nanotube electronics, circular embedded back grid structure be positioned at carbon nanotube cathod 9 under and same plane, the circular embedded part of circular embedded back grid structure by 9 of carbon nanotube cathods around.
Describedly have circular embedded back grid structure and comprise negative electrode panel 1, be located at the grid conducting layer 2 on the negative electrode panel 1, be located at the dielectric isolation layer 3 on the grid conducting layer 2, the contact hole 4 that exists on the dielectric isolation layer 3, be located at the circular grid layer 5 on the dielectric isolation layer 3, insulating cover 8 above the circular grid layer 5, be located at cathode conductive layer 6 and the cathode leg layer 7 on the cathode conductive layer 6 on the dielectric isolation layer 3 and be located at carbon nanotube cathod layer 9 on the cathode leg layer 7, wherein cathode conductive layer 6 and cathode leg layer 7 are interconnected, keep apart mutually with circular grid layer 5, contact hole hole 4 is connected with each other dielectric isolation layer 3 following grid conducting layer 2 and the circular grid layers 5 above the dielectric isolation layer 3
Described grid conducting layer 2 is tin indium oxide rete or gold, silver, molybdenum, tungsten, aluminium, copper, iron, cobalt, nickel, chromium metal level, dielectric isolation layer 3 is polyimide layer, silicon dioxide layer or insulation paste layer, exist contact hole 4 for circular on the dielectric isolation layer 3, grid conducting layer 2, circular grid layer 5 and to be arranged in the metal that contact hole 4 is used to connect all be with a kind of metal, in contact hole, prepare certain thickness metal, with the last plane of the last plane of guaranteeing contact hole and dielectric isolation layer on same plane.
The described layer of metal layer of preparing on dielectric isolation layer 3 is divided into three parts after etching, and this three part all is positioned at the top of dielectric isolation layer 3, three part metals layers after the etching are respectively: circular grid layer 5, cathode conductive layer 6 and cathode leg layer 7, circular grid layer 5 presents a kind of discoid, be positioned at the centre position of cathode conductive layer 6, be not communicated with mutually with cathode conductive layer 6, be interconnected with the contact hole that is positioned on the dielectric isolation layer, the area of circular grid layer 5 is bigger than the area of contact hole, and the center of circle of this contact hole overlaps with the center of circle of circular grid layer 5, cathode conductive layer 6 be positioned at circular grid layer around, present list structure, and the trend of the trend of cathode conductive layer and grid conducting layer is vertical mutually.
Described insulating cover 8 is polyimide layer, silicon dioxide layer or insulation paste layer, exists the carbon nanotube cathod layer above the cathode conductive layer, and the carbon nanotube cathod layer is positioned on the cathode conductive layer, be looped around circular grid layer around.
The described fixed position of circular embedded back grid structure that has is for being fixed on the negative electrode panel; Grid conducting layer be positioned at simultaneously carbon nanotube cathod under and on the same plane, controlling the electronics emission of carbon nanotube cathod; Backing material is a glass, as soda-lime glass, and Pyrex, just the negative electrode panel of display device.
Circular embedded back grid structure among the present invention comprises negative electrode panel 1, grid conducting layer 2, dielectric isolation layer 3, contact hole 4, circular grid layer 5, cathode conductive layer 6, cathode leg layer 7, insulating cover 8, carbon nanotube cathod layer 9 part, and adopts following technology to make:
1, the making of negative electrode panel: whole soda-lime glass is carried out cutting, remove surface dirt and impurity, form the negative electrode panel;
2, the making of grid conducting layer: evaporation layer of metal chromium on the negative electrode panel, this metallic chromium layer will cover the negative electrode panel; In conjunction with conventional photoetching process, metallic chromium layer is carried out etching then, form grid conducting layer;
3, the making of dielectric isolation layer: on the negative electrode panel, prepare polyimide layer, form dielectric isolation layer; The preparation of this polyimide layer can be finished in conjunction with spin coated technology, through 375 ℃ ± 5 ℃ high temperature baking process, the polyimide layer for preparing is cured then;
4, the making of contact hole: the reactive ion etching process in conjunction with conventional, polyimide layer is carried out etching, form circular contact hole;
5, the filling of contact hole: in conjunction with conventional evaporation process, evaporation metal chromium once more on polyimide layer is filled contact hole, until fill full till, with the last plane of the last plane of guaranteeing contact hole and dielectric isolation layer on same plane, without any depressed phenomenon; In conjunction with conventional photoetching process, unnecessary chromium metal level is etched away then;
6, the making of circular grid layer, cathode conductive layer, cathode leg layer: metallic chromium layer of evaporation on dielectric isolation layer; In conjunction with conventional photoetching process, metallic chromium layer is carried out etching, metallic chromium layer is divided into three parts, and this three part is all in the same plane, promptly all be positioned at the top of dielectric isolation layer; Three part metals layers are respectively: circular grid layer, cathode conductive layer and cathode leg layer; Wherein cathode conductive layer and cathode leg layer are interconnected, but all keep apart mutually with circular grid layer; Round grid layer presents a kind of discoid, is positioned at the centre position of cathode conductive layer, but is not communicated with mutually with cathode conductive layer, but is interconnected with the contact hole that is positioned on the dielectric isolation layer; The area of circular grid layer is bigger than the area of contact hole, and the center of circle of this contact hole overlaps with the center of circle of circular grid layer; Cathode conductive layer be positioned at circular grid layer around, present list structure generally, and the trend of the trend of cathode conductive layer and grid conducting layer is orthogonal;
7, the making of insulating cover: prepare polyimide layer at circular grid layer with above the cathode leg layer, form insulating cover; The preparation of this polyimide layer can be finished in conjunction with spin coated technology, through 375 ℃ ± 5 ℃ high temperature baking process, the polyimide layer for preparing is cured then; Require insulating cover will cover circular grid layer and cathode leg layer fully, and do not cover cathode conductive layer;
8, the cleaning surfaces of negative electrode panel is handled: the target panel surface carries out clean, removes impurity and dust;
9, the making of carbon nanotube cathod layer: the silk-screen printing technique in conjunction with conventional, carbon nanotube cathod is printed on the cathode conductive layer, form the carbon nanotube cathod layer; The carbon nanotube cathod layer is positioned on the cathode conductive layer, but be not all to be covered with cathode conductive layer, but be looped around circular grid layer around, the cross one another zone of cathode conductive layer and grid conducting layer just, remaining zone does not then have carbon nanotube cathod;
10, the reprocessing of carbon nanotube cathod layer: the carbon nanotube cathod layer after the printing is carried out reprocessing, to improve the field emission characteristics of carbon nanotube cathod.
The manufacture craft of carbon nanotube field emission flat-panel monitor that has circular embedded back grid structure among the present invention is as follows:
1, the making of negative electrode panel: whole soda-lime glass is carried out cutting, remove surface dirt and impurity, form the negative electrode panel;
2, the making of grid conducting layer: evaporation layer of metal chromium on the negative electrode panel, this metallic chromium layer will cover the negative electrode panel; In conjunction with conventional photoetching process, metallic chromium layer is carried out etching then, form grid conducting layer;
3, the making of dielectric isolation layer: on the negative electrode panel, prepare polyimide layer, form dielectric isolation layer; The preparation of this polyimide layer can be finished in conjunction with spin coated technology, through 375 ℃ ± 5 ℃ high temperature baking process, the polyimide layer for preparing is cured then;
4, the making of contact hole: the reactive ion etching process in conjunction with conventional, polyimide layer is carried out etching, form circular contact hole;
5, the filling of contact hole: in conjunction with conventional evaporation process, evaporation metal chromium once more on polyimide layer is filled contact hole, until fill full till, with the last plane of the last plane of guaranteeing contact hole and dielectric isolation layer on same plane, without any depressed phenomenon; In conjunction with conventional photoetching process, unnecessary chromium metal level is etched away then;
6, the making of circular grid layer, cathode conductive layer, cathode leg layer: metallic chromium layer of evaporation on dielectric isolation layer; In conjunction with conventional photoetching process, metallic chromium layer is carried out etching, metallic chromium layer is divided into three parts, and this three part is all in the same plane, promptly all be positioned at the top of dielectric isolation layer; Three part metals layers are respectively: circular grid layer, cathode conductive layer and cathode leg layer; Wherein cathode conductive layer and cathode leg layer are interconnected, but all keep apart mutually with circular grid layer; Round grid layer presents a kind of discoid, is positioned at the centre position of cathode conductive layer, but is not communicated with mutually with cathode conductive layer, but is interconnected with the contact hole that is positioned on the dielectric isolation layer; The area of circular grid layer is bigger than the area of contact hole, and the center of circle of this contact hole overlaps with the center of circle of circular grid layer; Cathode conductive layer be positioned at circular grid layer around, present list structure generally, and the trend of the trend of cathode conductive layer and grid conducting layer is orthogonal;
7, the making of insulating cover: prepare polyimide layer at circular grid layer with above the cathode leg layer, form insulating cover; The preparation of this polyimide layer can be finished in conjunction with spin coated technology, through 375 ℃ ± 5 ℃ high temperature baking process, the polyimide layer for preparing is cured then; Require insulating cover will cover circular grid layer and cathode leg layer fully, and do not cover cathode conductive layer;
8, the cleaning surfaces of negative electrode panel is handled: the target panel surface carries out clean, removes impurity and dust;
9, the making of carbon nanotube cathod layer: the silk-screen printing technique in conjunction with conventional, carbon nanotube cathod is printed on the cathode conductive layer, form the carbon nanotube cathod layer; The carbon nanotube cathod layer is positioned on the cathode conductive layer, but be not all to be covered with cathode conductive layer, but be looped around circular grid layer around, the cross one another zone of cathode conductive layer and grid conducting layer just, remaining zone does not then have carbon nanotube cathod;
10, the reprocessing of carbon nanotube cathod layer: the carbon nanotube cathod layer after the printing is carried out reprocessing, to improve the field emission characteristics of carbon nanotube cathod.
11, the making of anode glass panel: whole sodium calcium plate glass is carried out cutting, produce the anode glass panel;
12, the making of anode electrode layer: evaporation one deck tin indium oxide rete on the anode glass panel; In conjunction with conventional photoetching process, tin indium oxide rete is carried out etching, form anode electrode layer;
13, the making of insulation paste layer: in conjunction with silk-screen printing technique, the non-display area printing insulation paste layer at anode electrode layer is used to prevent the parasitic electrons emission; Through overbaking (baking temperature: 150 ℃, retention time: 5 minutes) afterwards, be placed on and carry out high temperature sintering (sintering temperature: 580 ℃, retention time: 10 minutes) in the sintering furnace;
14, the making of phosphor powder layer: in conjunction with silk-screen printing technique, the viewing area printing phosphor powder layer on anode electrode layer; In the middle of baking oven, toast (baking temperature: 120 ℃, the retention time: 10 minutes);
15, device assembling: cathode glass faceplate, anode glass panel, supporting wall structure glass are enclosed frame be assembled together, and getter is put in the middle of the cavity, fix with glass powder with low melting point.Around face glass, smeared glass powder with low melting point, fixed with clip.
16, finished product is made: the device that has assembled is carried out following packaging technology: the sample device is put into baking oven toast; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
The flat-plate luminous display of a kind of circular embedded back grid structure among the present invention includes following part: by negative electrode panel, anode plate and all around glass enclose the sealed vacuum chamber that frame constitutes; The circular embedded back grid structure that carbon nanotube cathod, cathode conductive layer is arranged on the negative electrode panel and be used for the emission of controlling carbon nanotube electronics; The phosphor powder layer on anode conductive layer at anode conductive layer that photoetching is arranged on the anode plate and preparation; The attached original paper of supporting wall structure and getter.It is characterized in that having made a kind of circular embedded back grid structure, grid structure be positioned at simultaneously carbon nanotube cathod under and same plane, emission plays strong control action for its electronics; The circular embedded part of its back grid structure by carbon nanotube cathod institute around, under the effect of appropriate voltage, can launch a large amount of electronics, made full use of the field emission phenomenon of a large amount of electronics of edge-emission, can reduce working voltage of device effectively, improve the electronic transmitting efficiency of carbon nanotube cathod.
The fixed position of the circular embedded back grid structure among the present invention is for being fixed on the negative electrode panel; The grid conducting layer of the circular embedded back grid structure among the present invention be positioned at simultaneously carbon nanotube cathod under and on the same plane, controlling the electronics emission of carbon nanotube cathod; Backing material in the circular embedded back grid structure among the present invention be large-scale, have quite good thermal endurance and operability, a High Performance Insulation material with low cost; Backing material in the circular embedded back grid structure among the present invention is a glass, as soda-lime glass, and Pyrex, just the negative electrode panel of display device; Have grid conducting layer on the negative electrode panel in the circular embedded back grid structure among the present invention, grid conducting layer can be tin indium oxide rete, also can be metal level, is gold, silver, molybdenum, tungsten, aluminium, copper, iron, cobalt, nickel, chromium; Grid conducting layer in the circular embedded back grid structure among the present invention can form pattern in conjunction with the photoetching process of routine; Have dielectric isolation layer above the grid conducting layer in the circular embedded back grid structure among the present invention, this dielectric isolation layer can be polyimide layer, silicon dioxide layer, insulation paste layer; Have contact hole on the dielectric isolation layer in the circular embedded back grid structure among the present invention, this contact hole is circular, and grid conducting layer below the dielectric isolation layer and the circular grid layer above the dielectric isolation layer are connected with each other; Grid conducting layer in the circular embedded back grid structure among the present invention, circular grid layer and be arranged in the metal that contact hole is used to connect and all use with a kind of metal are in order to guarantee good Ohmic contact; Need in contact hole, prepare certain thickness metal in the circular embedded back grid structure among the present invention, with the last plane of the last plane of guaranteeing contact hole and dielectric isolation layer on same plane, without any depressed phenomenon; Prepare the layer of metal layer in the circular embedded back grid structure among the present invention on dielectric isolation layer, this metal level is identical with the metal that grid conducting layer uses; Need the metal level above the dielectric isolation layer is carried out etching in the circular embedded back grid structure among the present invention, can finish in conjunction with the photoetching process of routine; Be divided into three parts in the metal level in the circular embedded back grid structure among the present invention after the etching, and this three part is all in the same plane, promptly all is positioned at the top of dielectric isolation layer; Three part metals layers after the etching in the circular embedded back grid structure among the present invention are respectively: circular grid layer, cathode conductive layer and cathode leg layer; Wherein cathode conductive layer and cathode leg layer are interconnected, but all keep apart mutually with circular grid layer; Round grid layer in the circular embedded back grid structure among the present invention presents a kind of discoid, is positioned at the centre position of cathode conductive layer, but is not communicated with mutually with cathode conductive layer, but is interconnected with the contact hole that is positioned on the dielectric isolation layer; The area of the circular grid layer in the circular embedded back grid structure among the present invention is bigger than the area of contact hole, and the center of circle of this contact hole overlaps with the center of circle of circular grid layer; Cathode conductive layer in the circular embedded back grid structure among the present invention be positioned at circular grid layer around, present list structure generally, and the trend of the trend of cathode conductive layer and grid conducting layer is orthogonal; Insulating cover of the top existence of the circular grid layer in the circular embedded back grid structure among the present invention, this insulating cover can be polyimide layer, silicon dioxide layer and insulation paste layer; Exist the carbon nanotube cathod layer above the cathode conductive layer in the circular embedded back grid structure among the present invention, can use the method for direct growth to prepare, also can adopt the method for transplanting to prepare; Carbon nanotube cathod layer in the circular embedded back grid structure among the present invention is positioned on the cathode conductive layer, but be not all to be covered with cathode conductive layer, but be looped around circular grid layer around, the cross one another zone of cathode conductive layer and grid conducting layer just, remaining zone does not then have carbon nanotube cathod.
Claims (6)
1, a kind of flat-panel monitor that has circular embedded back grid structure, comprise by negative electrode panel [1], anode plate [10] and all around glass enclose the sealed vacuum chamber that frame [14] is constituted, the phosphor powder layer [13] on anode conductive layer [11] at anode conductive layer [11] that photoetching is arranged on the anode plate [10] and preparation, be located at the supporting wall structure [15] between negative electrode panel [1] and the anode plate [10] and be located at getter subsidiary component [16] in the sealed vacuum chamber, it is characterized in that: on negative electrode panel [1], be manufactured with the circular embedded back grid structure that is used for the emission of controlling carbon nanotube electronics, circular embedded back grid structure be positioned at carbon nanotube cathod [9] under and same plane, the circular embedded part of circular embedded back grid structure by carbon nanotube cathod [9] institute around.
2, a kind of flat-panel monitor that has circular embedded back grid structure according to claim 1, it is characterized in that: describedly have circular embedded back grid structure and comprise negative electrode panel [1], be located at the grid conducting layer [2] on the negative electrode panel [1], be located at the dielectric isolation layer [3] on the grid conducting layer [2], dielectric isolation layer [3] is gone up the contact hole [4] that exists, be located at the circular grid layer [5] on the dielectric isolation layer [3], insulating cover [8] above the circular grid layer [5], be located at cathode conductive layer [6] and the cathode leg layer [7] on the cathode conductive layer [6] on the dielectric isolation layer [3] and be located at carbon nanotube cathod layer [9] on the cathode leg layer [7], wherein cathode conductive layer [6] and cathode leg layer [7] are interconnected, keep apart mutually with circular grid layer [5], grid conducting layer [2] that contact hole hole [4] is following with dielectric isolation layer [3] and the circular grid layer [5] above the dielectric isolation layer [3] are connected with each other
3, a kind of flat-panel monitor that has circular embedded back grid structure according to claim 2, it is characterized in that: described grid conducting layer [2] is tin indium oxide rete or gold, silver, molybdenum, tungsten, aluminium, copper, iron, cobalt, nickel, the chromium metal level, dielectric isolation layer [3] is a polyimide layer, silicon dioxide layer or insulation paste layer, exist contact hole [4] for circular on the dielectric isolation layer [3], grid conducting layer [2], circular grid layer [5] and to be arranged in the metal that contact hole [4] is used to connect all be with a kind of metal, in contact hole, prepare certain thickness metal, with the last plane of the last plane of guaranteeing contact hole and dielectric isolation layer on same plane.
4, a kind of flat-panel monitor that has circular embedded back grid structure according to claim 2, it is characterized in that: the described layer of metal layer of preparing on dielectric isolation layer [3] is divided into three parts after etching, and this three part all is positioned at the top of dielectric isolation layer [3], three part metals layers after the etching are respectively: circular grid layer [5], cathode conductive layer [6] and cathode leg layer [7], circular grid layer [5] presents a kind of discoid, be positioned at the centre position of cathode conductive layer [6], be not communicated with mutually with cathode conductive layer [6], be interconnected with the contact hole that is positioned on the dielectric isolation layer, the area of circular grid layer [5] is bigger than the area of contact hole, and the center of circle of this contact hole overlaps with the center of circle of circular grid layer [5], cathode conductive layer [6] be positioned at circular grid layer around, present list structure, and the trend of the trend of cathode conductive layer and grid conducting layer is vertical mutually.
5, a kind of flat-panel monitor that has circular embedded back grid structure according to claim 2, it is characterized in that: described insulating cover [8] is polyimide layer, silicon dioxide layer or insulation paste layer, exist the carbon nanotube cathod layer above the cathode conductive layer, the carbon nanotube cathod layer is positioned on the cathode conductive layer, be looped around circular grid layer around.
6, a kind of manufacture craft that has the carbon nanotube field emission flat-panel monitor of circular embedded back grid structure, it is characterized in that: manufacture craft is as follows:
1), the making of negative electrode panel: whole glass is carried out cutting, remove surface dirt and impurity, form the negative electrode panel;
2), the making of grid conducting layer: evaporation layer of metal on the negative electrode panel, this metal level covers the negative electrode panel; In conjunction with conventional photoetching process, metal level is carried out etching then, form grid conducting layer;
3), the making of dielectric isolation layer: on the negative electrode panel, prepare dielectric isolation layer; The preparation of this dielectric isolation layer is finished in conjunction with spin coated technology, through 375 ℃ ± 5 ℃ high temperature baking process, the dielectric isolation layer for preparing is cured then;
4), the making of contact hole: the reactive ion etching process in conjunction with conventional, polyimide layer is carried out etching, form circular contact hole;
5), the filling of contact hole: in conjunction with conventional evaporation process, evaporation metal once more on polyimide layer is filled contact hole, until fill full till, with the last plane of the last plane of guaranteeing contact hole and dielectric isolation layer on same plane, without any depressed phenomenon; In conjunction with conventional photoetching process, unnecessary metal level is etched away then;
6), the making of circular grid layer, cathode conductive layer, cathode leg layer: metal level of evaporation on dielectric isolation layer; In conjunction with conventional photoetching process, metal level is carried out etching, metal level is divided into three parts, and this three partial portion is positioned at the top of dielectric isolation layer on same plane; Three part metals layers are respectively: circular grid layer, cathode conductive layer and cathode leg layer; Wherein cathode conductive layer and cathode leg layer are interconnected, but all keep apart mutually with circular grid layer; Round grid layer presents a kind of discoid, is positioned at the centre position of cathode conductive layer, but is not communicated with mutually with cathode conductive layer, but is interconnected with the contact hole that is positioned on the dielectric isolation layer; The area of circular grid layer is bigger than the area of contact hole, and the center of circle of this contact hole overlaps with the center of circle of circular grid layer; Cathode conductive layer be positioned at circular grid layer around, present list structure generally, and the trend of the trend of cathode conductive layer and grid conducting layer is orthogonal;
7), the making of insulating cover: prepare insulating cover at circular grid layer with above the cathode leg layer; Its preparation can be finished in conjunction with spin coated technology, through 375 ℃ ± 5 ℃ high temperature baking process, the insulating cover for preparing is cured then; Insulating cover covers circular grid layer and cathode leg layer fully, and does not cover cathode conductive layer;
8), the making of carbon nanotube cathod layer: the silk-screen printing technique in conjunction with conventional is printed on carbon nanotube cathod on the cathode conductive layer formation carbon nanotube cathod layer; The carbon nanotube cathod layer is positioned on the cathode conductive layer, but be not all to be covered with cathode conductive layer, but be looped around circular grid layer around, the cross one another zone of cathode conductive layer and grid conducting layer just, remaining zone does not then have carbon nanotube cathod;
10), the making of anode glass panel: whole plate glass is carried out cutting, produce the anode glass panel;
12), the making of anode electrode layer: evaporation one deck tin indium oxide rete on the anode glass panel; In conjunction with conventional photoetching process, tin indium oxide rete is carried out etching, form anode electrode layer;
13), the making of insulation paste layer: in conjunction with silk-screen printing technique, non-display area printing insulation paste layer at anode electrode layer, through overbaking, baking temperature: 150 ℃, retention time: 5 minutes, afterwards, be placed on and carry out high temperature sintering in the sintering furnace, sintering temperature: 580 ℃, the retention time: 10 minutes;
14), the making of phosphor powder layer: in conjunction with silk-screen printing technique, phosphor powder layer is printed in the viewing area on anode electrode layer; In the middle of baking oven, toast baking temperature: 120 ℃, the retention time: 10 minutes;
15), device assembling: cathode glass faceplate, anode glass panel, supporting wall structure glass are enclosed frame are assembled together, and getter is put in the middle of the cavity, fix with glass powder with low melting point,
16), finished product is made: the device that has assembled is carried out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100176748A CN100561643C (en) | 2006-04-21 | 2006-04-21 | The flat-panel monitor of circular embedded back grid structure and manufacture craft thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100176748A CN100561643C (en) | 2006-04-21 | 2006-04-21 | The flat-panel monitor of circular embedded back grid structure and manufacture craft thereof |
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| Publication Number | Publication Date |
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| CN1873889A true CN1873889A (en) | 2006-12-06 |
| CN100561643C CN100561643C (en) | 2009-11-18 |
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| CNB2006100176748A Expired - Fee Related CN100561643C (en) | 2006-04-21 | 2006-04-21 | The flat-panel monitor of circular embedded back grid structure and manufacture craft thereof |
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| Country | Link |
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| CN (1) | CN100561643C (en) |
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