CN1873434A - Magnetic sensor, production process of the magnetic sensor and magnetic array suitable for the production process - Google Patents

Abstract

The present invention aims to provide a magnetic sensor provided with a magnetoresistive effect element capable of stably maintaining a direction of magnetization in a magnetic domain of a free layer. The magnetic sensor includes a mangetoresistive effect element provided with narrow zonal portions (11a, 11a) including a pinned layer and a free layer. Disposed below both ends of the free layer are bias magnet films (11b, 11b) composed of a permanent magnet that applies to the free layer a bias magnetic field in a predetermined direction and an initializing coil 31 that is disposed in the vicinity of the free layer and applies to the free layer a magnetic field having the direction same as that of the bias magnetic field by being energized under a predetermined condition. Further, magnetizing the bias magnet films and fixing the direction of magnetization of the pinned layer are performed by a magnetic field formed by a magnet array configured such that plural permanent magnets are arranged on a lattice point of a tetragonal lattice and a polarity of a magnet pole of each permanent magnet is different from a polarity of the other adjacent magnet pole spaced by the shortest route.

Description

The magnet array of Magnetic Sensor and manufacture method thereof, suitable this manufacture method

The application's name that to be Yamaha Corporation submit on October 23rd, 2003 is called the dividing an application of application for a patent for invention that " Magnetic Sensor and manufacture method thereof, be fit to the magnet array of this manufacture method ", application number are 200310119837.X.

Technical field

The present invention relates to use the magneto-resistance effect element that constitutes by pinning layer and free layer Magnetic Sensor, this Magnetic Sensor manufacture method and be suitable for the magnet array of this manufacture method.

Background technology

So far, in Magnetic Sensor, using large-scale magnetoresistive element magnetoresistance elements such as (GMR elements), this large-scale magnetoresistive element have direction of magnetization pinned (ピ Application) (fixing) on prescribed direction pinning (ピ Application De) layer and direction of magnetization according to the free layer that the external magnetic field changes, present the resistance value of relativeness of the direction of magnetization of the direction of magnetization of corresponding pinning layer and free layer.In such Magnetic Sensor, in order to detect small external magnetic field accurately, the direction of magnetization stable maintenance of each magnetic region of free layer that must be when this Magnetic Sensor not being applied this external magnetic field is on the direction of regulation (below, the direction of this regulation is called " direction of original state ").

Therefore, usually, looking squarely when shape is made as rectangle with the free layer of film, consistent by the long limit (major axis) that makes this rectangle with the direction of described original state, just can utilize the shape anisotropy that makes direction of magnetization and vertical consistency, make the direction of magnetization of each magnetic region of this free layer consistent with the direction of this original state.In addition, with permanent magnetic film is the both ends longitudinally that magnetic bias film is configured in free layer, this free layer is applied the magnetic field of the direction of this original state by this magnetic bias film, make when having eliminated the external magnetic field, the direction of magnetization of each magnetic region of free layer can return to the direction (for example, with reference to patent documentation 1) of described original state steadily in the long term.(patent documentation 1) spy opens 2002-299728 (Figure 42～Figure 44)

With reference to plane Figure 17 of this free layer and this magnetic bias film, the magnetized form of such free layer and magnetic bias film is described.In Figure 17, free layer 100 forms to have on the X-direction vertically, a pair of magnetic bias film 101,102 is set two ends longitudinally at this.

In the stage that has formed these films, shown in the arrow of Figure 17 (A), the direction of magnetization of free layer 100 and each magnetic region of magnetic bias film 101,102 is not that the direction of original state is consistent with the longitudinal direction of free layer.Be in the Magnetic Sensor of this state for free layer 100 and magnetic bias film 101,102, if in direction longitudinally (Y direction), apply the external magnetic field of size variation perpendicular to free layer, check the resistance value of this Magnetic Sensor, then shown in Figure 18 (A), magnetic hysteresis takes place.Hence one can see that, the direction of magnetization of free layer 100 and magnetic bias film 101,102 not with the Magnetic Sensor of the vertical consistency of this free layer in, the external magnetic field is that " 0 " near the resistance value when changes in the scope shown in the arrow of Figure 18 (A), its result, this Magnetic Sensor can not detect small magnetic field accurately.

Below, free layer 100 and magnetic bias film 101,102 are in the Magnetic Sensor of the state shown in Figure 17 (A), if on vertical (the X-axis positive dirction) of free layer 100, apply magnetic field greater than the coercivity H of magnetic bias film 101,102, carry out the initialization of free layer 100 and the magnetize of magnetic bias film 101,102, then shown in Figure 17 (B), this free layer 100 is consistent with the direction of original state with the direction of magnetization of each magnetic region of this magnetic bias film 101,102.

If to being in the Magnetic Sensor of this state, the external magnetic field that in Y direction is applied to coercitive scope less than magnetic bias film 101,102, changes, then the direction of magnetization of each magnetic region of free layer 100 just changes shown in Figure 17 (C), afterwards, if the external magnetic field is eliminated, then the direction of magnetization of each magnetic region of this free layer 100 returns to the direction of the original state shown in Figure 17 (D) identical with Figure 17 (B).Under this situation, if check the resistance value of Magnetic Sensor, then as Figure 18 (B) shown in, magnetic hysteresis reduces, and the external magnetic field is that near " 0 " this resistance value when becomes roughly certain.Thereby the Magnetic Sensor that has carried out the magnetize of the initialization of free layer 100 and magnetic bias film 101,102 just can detect small magnetic field accurately.

But, if relevant Magnetic Sensor (has been carried out the initialization and the magnetic bias film 101 of free layer 100, the Magnetic Sensor of 102 magnetize) applies than magnetic bias film 101,102 coercive force is little but bigger, and the external magnetic field of principal ingredient is being arranged in the opposite direction on (X-axis negative direction) with the side of original state, then the direction of magnetization of each magnetic region of free layer just from the state shown in Figure 19 (A) to the state variation shown in Figure 19 (B), afterwards, even eliminated this external magnetic field, shown in Figure 19 (C), the direction of magnetization of each magnetic region of this free layer 100 also not with the direction consistent (recovery) of original state.Its result has the problem that the accuracy of detection in magnetic hysteresis, magnetic field worsens with regard to Magnetic Sensor is arranged for the variation of once more external magnetic field.

Summary of the invention

Thereby, even an object of the present invention is to provide a kind of applying after the big external magnetic field, also can keep the Magnetic Sensor of accuracy of detection well.In addition, another object of the present invention provides the manufacture method of a kind of Magnetic Sensor that can carry out the magnetize of described magnetic bias film efficiently, this Magnetic Sensor and is suitable for the magnet array of this manufacture method.

The invention is characterized in, a kind of Magnetic Sensor that constitutes by magneto-resistance effect element with pinning layer and free layer, it has: magnetic bias film, and it makes the permanent magnet that produces the bias field of prescribed direction on this free layer constitute by the two ends that are arranged on described free layer simultaneously; The initialization coil, itself and described free layer vicinity are provided with, and by switching under rated condition, this free layer are applied and the unidirectional magnetic field of described bias field.

Like this, because initialization is switched under rated condition with coil, magnetic field is used in the initialization that makes its generation be used for the identical direction of bias field that the direction of magnetization with each magnetic region of free layer turns back to and produced by magnetic bias film, therefore, even in that certain is former thereby disturbed under the situation of direction of magnetization of each magnetic region of free layer owing to Magnetic Sensor applied high-intensity magnetic field etc., also can revise it, its result, can provide a kind of does not have magnetic hysteresis in the resistance change to magnetic field, and can detect the Magnetic Sensor in small magnetic field for a long time accurately.

Of the present invention another is characterised in that, a kind of manufacture method of Magnetic Sensor is provided, this Magnetic Sensor has magneto-resistance effect element, described magneto-resistance effect element has pinning layer, free layer and gives the magnetic bias film that is made of permanent magnet of bias field to this free layer on substrate, and the resistance value of described magneto-resistance effect element is according to the direction of magnetization of pinning layer and the formed variable angle of direction of magnetization of this free layer.Described method comprises following operation: prepare the operation of magnet array, it is arranged on a plurality of permanent magnets on the lattice point of grid square, and the polarity of the magnetic pole of each permanent magnet is different with the polarity of other magnetic poles of interval bee-line adjacency simultaneously; Make the operation of single-chip, it scatters the unit membrane of a plurality of islands on described substrate, and this unit membrane comprises the film that becomes described pinning layer, become the film of described free layer and become the film of described magnetic bias film; Carry out the magnetize operation, it is configured in this single-chip on the position that is close to this magnet array, make described single-chip and described magnet array have the relative position relation of regulation, and utilize magnetic field to become the magnetize of the film of the described magnetic bias film of described a plurality of unit membranes, described magnetic field be formed in the magnetic pole of this magnet array magnetic pole and and the magnetic pole of this magnet array of this pole piece spacing bee-line adjacency in other magnetic poles between.

The structure of described magnet array is, a plurality of permanent magnets is arranged on the lattice point of grid square, make each permanent magnet magnetic pole polarity with look squarely in (in same plane) polarity of other magnetic poles of bee-line adjacency is different at interval.Thereby, above magnet array, in the looking squarely of this magnet array, from a N utmost point to the S on the right side that is present in this N utmost point utmost point form right magnetic field, from this N utmost point to the S of the upside that is present in this N utmost point utmost point form direction magnetic field, from this N utmost point to the S in the left side that is present in this N utmost point utmost point form left to magnetic field reach the magnetic field (with reference to Figure 13) that forms down direction from this N utmost point to the S of the downside that is present in this N utmost point utmost point.Similarly, for certain S utmost point, from the N utmost point on the right side that is present in this S utmost point form left to magnetic field, form down the magnetic field of direction, form the magnetic field of direction from the magnetic field of the N utmost point formation right in the left side that is present in this S utmost point, from the N utmost point of the downside that is present in this S utmost point from the N utmost point of the upside that is present in this S utmost point.

In the described method, to forming the magnet array in such magnetic field, relative position with regulation concerns the neighbor configuration single-chip, described single-chip scatters the unit membrane of the island of a plurality of films that comprise the film, the film that becomes described free layer that become described pinning layer, become described magnetic bias film on described substrate, utilization makes described a plurality of unit membrane become the magnetize of the film of described magnetic bias film by the described magnetic field that this magnet array forms.Thereby the magnetic direction that rises that can make magnetic bias film on the single substrate is efficiently intersected the Magnetic Sensor of (vertical under this situation) mutually.

More particularly, the operation of making described single-chip comprises, formation becomes the film of each free layer of a plurality of unit membranes, make when the film that becomes each free layer of described a plurality of unit membranes is formed the shape with major axis and minor axis, at least the major axis of film of free layer that becomes these a plurality of unit membranes is vertical with the major axis of the film that becomes another free layer, and, the film that becomes described magnetic bias film is formed on the both ends of the long axis direction of the film that becomes each free layer.The relative position relation that becomes the described regulation in the operation of magnetize of film of described magnetic bias film is that described single-chip concerns with the relative position of this magnet array, promptly the magnetic field that is formed by described magnet array makes the direction of magnetization of the film that becomes this magnetic bias film consistent with the long axis direction of the film that becomes described free layer that has formed this magnetic bias film at two ends.

In addition, at this moment, preferably include following operation, with this single-chip and this magnet array neighbor configuration, make described single-chip and described magnet array have the relative position relation different with the relative position relation of described regulation, the described magnetic field that utilization is formed by this magnet array, pinning become the direction of magnetization of film of the described pinning layer of described a plurality of unit membranes.

Like this, owing to when the direction of magnetization of fixing pinning layer, also use the magnet array of the magnetize of the film that is used to become magnetic bias film, the direction of magnetization of therefore, can be efficiently and making pinning layer on the single substrate is at an easy rate intersected the Magnetic Sensor (can distinguish two axial magnetic sensors in the magnetic field of detection of vertical direction) of (vertical under this situation) mutually.

In addition, according to the present invention, a kind of magnet array is provided, it constitutes, being provided with roughly is rectangular shape, shape perpendicular to the section of a certain central shaft of this rectangular parallelepiped is roughly foursquare a plurality of permanent magnets, make that the center of gravity with foursquare end face roughly is consistent with the lattice point of grid square, simultaneously, the polarity of the magnetic pole of this each permanent magnet that has been provided with (appearing at the polarity of the magnetic pole of this end face) is different with the polarity (appearing at the polarity of the magnetic pole of this end face) of the magnetic pole of other permanent magnets of interval bee-line adjacency.

Promptly, the described a plurality of permanent magnets of the configuration of this magnet array, make center of gravity consistent with the lattice point of grid square with each described roughly foursquare end face, having the limit of each described roughly foursquare end face and the limit of same other end faces that list is present on the roughly same straight line, this end face is present on the roughly same plane, and the polarity of the magnetic pole of this end face is different with the polarity of the magnetic pole of the end face of other permanent magnets of interval bee-line adjacency.

As mentioned above owing to use relevant magnet array, can fix efficiently described two axial magnetic sensors the film that becomes each magnetic bias film magnetize and/or become the direction of magnetization of the layer of each pinning layer, therefore, can make this two axial magnetic sensor at an easy rate.

In addition, this magnet array also is " a kind of magnet array; it has is rectangular shape roughly; is square roughly perpendicular to the shape of the section of a certain central shaft of this rectangular parallelepiped; and be formed with a plurality of permanent magnets of magnetic pole on this roughly foursquare end face perpendicular to this central shaft; the center of gravity with each described roughly foursquare end face of described a plurality of permanent magnets is consistent with the lattice point of grid square; simultaneously, the one side of one side and the described end face of other permanent magnets that are configured in same column that is configured in the described end face of a permanent magnet in described a plurality of permanent magnets that any one of described grid square lists is present on the roughly same straight line, being present on the roughly same plane of the end face of described a plurality of permanent magnets, and, make the polarity difference of the magnetic pole that forms on the end face of two permanent magnets that the interval bee-line in described a plurality of permanent magnet adjoins each other." magnetize that is used in magnetic bias film of carrying out described Magnetic Sensor etc. is desirable.

In addition, described " a kind of magnet array; is rectangular shape roughly having; is square roughly perpendicular to the shape of the section of a certain central shaft of this rectangular parallelepiped; and when on this roughly foursquare end face perpendicular to this central shaft, having formed a plurality of permanent magnets of magnetic pole, the yoke with the plate-shaped that constitutes by magnetic material; When the center of gravity with each described roughly foursquare end face of described a plurality of permanent magnets is consistent with the lattice point of grid square, the one side of one side and the described end face of other permanent magnets that are configured in same column that is configured in the described end face of a permanent magnet in described a plurality of permanent magnets that any one of described grid square lists is present on the roughly same straight line, being present on the roughly same plane of the end face of described whole a plurality of permanent magnets, and, make the polarity difference of the magnetic pole that forms on the end face of two permanent magnets that the interval bee-line in described a plurality of permanent magnet adjoins each other; Described yoke with the roughly the same position of a plurality of permanent magnets of described configuration on have the roughly the same through hole of shape of the described roughly foursquare section of a plurality of shapes and this permanent magnet, in this through hole, insert this permanent magnet, exist the plane of the end face of described permanent magnet to be present between the upper surface and lower surface of this yoke." magnetize that is used in magnetic bias film of carrying out described Magnetic Sensor etc. is desirable.

Because this magnet array has the yoke that is made of magnetic material, therefore can make from the permanent magnet magnetic force line needed place of leading.Thereby, can carry out the magnetize etc. of the magnetic bias film of Magnetic Sensor effectively by this magnet array.

At this moment, described yoke is preferably in the through hole that the interval bee-line in described a plurality of through hole adjoins each other and forms the through hole that becomes air-gap each other.

This magnet array becomes the through hole of air-gap owing to (insert the end face of the permanent magnet that the polarity of magnetic pole differs from one another in these two through holes) each other at the through hole of interval bee-line adjacency, thus flux concentrating in through hole with through hole near the space of part.In other words, magnet array can be in the magnetic field that narrow space region generating intensity is big and direction is certain of part.Thereby, can carry out the magnetize etc. of the magnetic bias film of Magnetic Sensor effectively by this magnet array.

Described yoke is preferably on the position that surrounds foursquare center of gravity and forms opening, and described square connects described grid square in looking squarely each lattice point forms.

This magnet array not only has described through hole, also has opening.The position that has formed this opening is to surround each lattice point that connects grid square and the position of the foursquare center of gravity that forms.This position is to intersect and the magnetic field unsettled part that becomes from the magnetic line of force of each magnetic pole.Thereby, eliminate the instability in magnetic field by opening.Its result, the magnetic field that produces between the magnetic pole of the heteropole of interval bee-line adjacency becomes straight line, can part produce more stable partly and magnetic field that intensity is the same near described through hole.Therefore, according to relevant magnet array, can carry out the magnetize etc. of the magnetic bias film of Magnetic Sensor effectively.

In addition, each through hole of described yoke preferably has square portion and edge part, described square portion be in looking squarely with the identical square of the roughly foursquare section of having of described permanent magnet, described edge part has protruded into this foursquare outside from each bight of this square portion.

Yoke is being formed under the situation of foursquare through hole by etching, if etching is insufficient, then foursquare bight just becomes circular arc, probably can not insert permanent magnet.To this, in described yoke, because edge part is also etched, so can exactly permanent magnet be inserted in the through hole.

Description of drawings

Fig. 1 is the planimetric map of the embodiment of Magnetic Sensor of the present invention;

Fig. 2 is the signal amplification view of the first X-axis GMR element shown in Fig. 1;

Fig. 3 be by along the plane cutting of the 1-1 line of Fig. 2 the schematic plan view of the first X-axis GMR element shown in Fig. 2;

Fig. 4 is the figure that spin valve film (spin valvefilm) structure of the first X-axis GMR element shown in Fig. 2 is shown;

Fig. 5 be with solid line show the first X-axis GMR element shown in Fig. 1 in the resistance change in the magnetic field that changes on the X-direction, be shown in broken lines the curve map of the resistance change in the magnetic field that on Y direction, changes;

Fig. 6 (A) is the equivalent electrical circuit of the X-axis Magnetic Sensor that has of the Magnetic Sensor shown in Fig. 1, and Fig. 6 (B) illustrates the curve map that the output in the magnetic field that changes of this X-axis Magnetic Sensor changes on X-direction;

Fig. 7 (A) is the equivalent electrical circuit of the Y-axis Magnetic Sensor that has of the Magnetic Sensor shown in Fig. 1, and Fig. 7 (B) illustrates the curve map that the output in the magnetic field that changes of this Y-axis Magnetic Sensor changes on Y direction;

Fig. 8 (A) is the equivalent electrical circuit of another X-axis Magnetic Sensor of having of the Magnetic Sensor shown in Fig. 1, and Fig. 8 (B) illustrates the curve map that the output in the magnetic field that changes of this X-axis Magnetic Sensor changes on X-direction;

Fig. 9 (A) is the equivalent electrical circuit of another Y-axis Magnetic Sensor of having of the Magnetic Sensor shown in Fig. 1, and Fig. 9 (B) illustrates the curve map that the output in the magnetic field that changes of this Y-axis Magnetic Sensor changes on Y direction;

Figure 10 is a planimetric map in the process of the Magnetic Sensor shown in the shop drawings 1, that formed the quartz glass of spin valve film;

Figure 11 shows sheet metal and is inserted into the planimetric map of the permanent bar magnet in this sheet metal, and this sheet metal is used to prepare the magnet array that uses when the Magnetic Sensor shown in the shop drawings 1;

Figure 12 is the sectional view of the magnet array that uses when the Magnetic Sensor shown in the shop drawings 1;

Figure 13 is the stereographic map of a part that has taken out the magnet of the magnet array shown in Figure 12;

Figure 14 shows the figure of one of operation of the Magnetic Sensor shown in the shop drawings 1;

Figure 15 shows the concept map of method of magnetic bias film of each GMR element of the Magnetic Sensor shown in magnetize Fig. 1;

Figure 16 shows the concept map of method of direction of magnetization of pinning layer of each GMR element of the Magnetic Sensor shown in pinning Fig. 1;

Figure 17 shows the planimetric map of the magnetized form of the free layer of GMR element and magnetic bias film, Figure 17 (A) shows the figure of the state before the magnetize of magnetic bias film, Figure 17 (B) shows the figure of the state after the magnetize of magnetic bias film, Figure 17 (C) shows the figure that applies the state behind the external magnetic field, and Figure 17 (D) shows the figure of the state behind the external magnetic field of having eliminated;

Figure 18 (A) shows the curve map in the resistance change of the external magnetic field of GMR element in the state before the magnetize of magnetic bias film, and Figure 18 (B) shows the curve map in the resistance change of the external magnetic field of GMR element in the state after the magnetize of magnetic bias film;

Figure 19 shows the planimetric map of the magnetized form of the free layer of GMR element and magnetic bias film, Figure 19 (A) shows the figure that does not add the state of external magnetic field after the magnetize of magnetic bias film, Figure 19 (B) shows the figure of the state that has applied strong external magnetic field, and Figure 19 (C) shows the figure that has eliminated the state behind the strong external magnetic field;

Figure 20 is the signal amplification view of the first X-axis GMR element among another embodiment of the Magnetic Sensor that the present invention relates to;

Figure 21 is other the planimetric map of embodiment of Magnetic Sensor (N type) of the present invention;

Figure 22 is other the planimetric map of embodiment of Magnetic Sensor (S type) of the present invention;

Figure 23 is the partial plan of the yoke of the magnet array MB that the present invention relates to;

Figure 24 is the part enlarged drawing of the yoke shown in Figure 23;

Figure 25 is by the sectional view along the plane cutting yoke of the 2-2 line of Figure 24;

Figure 26 is the planimetric map of a through hole of the yoke shown in Figure 23;

Figure 27 is the sectional view of the array of the magnet array MB that the present invention relates to substrate;

Figure 28 is the partial plan of the array shown in Figure 27 with substrate;

Figure 29 becomes the thin plate of the array shown in Figure 27 with the material of substrate;

Figure 30 shows the figure of an operation making magnet array MB;

Figure 31 shows the figure of an operation making magnet array MB;

Figure 32 shows the figure of an operation making magnet array MB;

Figure 33 shows the figure of an operation making magnet array MB;

Figure 34 has taken out the part of magnet of magnet array MB and the stereographic map of yoke;

Figure 35 is the fragmentary cross-sectional view of magnet array MB;

Figure 36 is the planimetric map of this magnet array MB in the magnetic field that is used to illustrate that magnet array MB relates to;

Figure 37 is the planimetric map of this magnet array MA in the magnetic field that is used to illustrate that magnet array MA relates to;

Figure 38 shows the concept map of method of direction of magnetization of pinning layer of each GMR element of the Magnetic Sensor shown in pinning Figure 21 and Figure 22;

The sectional view of the magnet array MB when Figure 39 shows the magnetic bias film of each GMR element of the Magnetic Sensor shown in magnetize Figure 21 and Figure 22 and the position relation of substrate;

Figure 40 shows the concept map of method of magnetic bias film of each GMR element of the Magnetic Sensor shown in magnetize Figure 21 and Figure 22.

The explanation of Reference numeral

10,50... Magnetic Sensor

11～14,21～24,51～54,61～64...GMR element

11a～14a, 21a～24a, 51a～54a, 61a～64a... arrowband shape portion

11b～14b, 21b～24b, 51b～54b, 61b～64b... magnetic bias film

31～34,41～44,71～74,81～84... initialization coil

MA... magnet array

Embodiment

Below, the embodiment of the Magnetic Sensor that the present invention relates to reference to description of drawings.This Magnetic Sensor is divided into N type and S type according to manufacture method described later.Fig. 1 is a planimetric map of having enumerated the Magnetic Sensor 50 of the Magnetic Sensor 10 of N type and S type.The Magnetic Sensor 10 of N type and the Magnetic Sensor 50 of S type, except different mutually these such as direction of magnetization of the original state of the fixing direction of magnetization of the pinning layer shown in the blacking arrow among Fig. 1 and free layer shown in the hollow arrow among Fig. 1 are put, be of similar shape in fact and structure.Thereby, below serve as main describing with the Magnetic Sensor 10 of N type.

As shown in Figure 1, Magnetic Sensor 10 is rectangle (roughly square) shapes that have in planimetric map along the limit of orthogonal X-axis and Y-axis, and its structure comprises: very little single substrate (single substrate) 10a of thickness on perpendicular to the Z-direction of X-axis and Y-axis that is made of quartz glass; A plurality of insulation course 10b (in this insulation course, comprising wiring layer) on the stacked substrate 10a shown in Figure 3; Be formed on totally eight the GMR elements 11～14,21～24 on the 10b1 of the superiors of this insulation course 10b; Totally eight initialization are with coils 31～34,41～44.

The first X-axis GMR element 11 is formed near the Y direction substantial middle subordinate side, X-axis negative direction end of substrate 10a, and shown in the blacking arrow of Fig. 1, the pinning direction of magnetization of pinning layer is the X-axis negative direction.The second X-axis GMR element 12 is formed near the Y direction substantial middle portion top, X-axis negative direction end of substrate 10a, and shown in the blacking arrow of Fig. 1, the pinning direction of magnetization of pinning layer is the X-axis negative direction.The 3rd X-axis GMR element 13 is formed near the Y direction substantial middle portion top, X-axis positive dirction end of substrate 10a, and shown in the blacking arrow of Fig. 1, the pinning direction of magnetization of pinning layer is the X-axis positive dirction.The 4th X-axis GMR element 14 is formed near the Y direction substantial middle subordinate side, X-axis positive dirction end of substrate 10a, and shown in the blacking arrow of Fig. 1, the pinning direction of magnetization of pinning layer is the X-axis positive dirction.

The first Y-axis GMR element 21 is formed near the X-direction substantial middle portion left, Y-axis positive dirction end of substrate 10a, and shown in the blacking arrow of Fig. 1, the pinning direction of magnetization of pinning layer is the Y-axis positive dirction.The second Y-axis GMR element 22 is formed on that the X-direction substantial middle portion of substrate 10a is right-hand, near the Y-axis positive dirction end, shown in the blacking arrow of Fig. 1, the pinning direction of magnetization of pinning layer is the Y-axis positive dirction.The 3rd Y-axis GMR element 23 is formed on that the X-direction substantial middle portion of substrate 10a is right-hand, near the Y-axis negative direction end, shown in the blacking arrow of Fig. 1, the pinning direction of magnetization of pinning layer is the Y-axis negative direction.The 4th Y-axis GMR element 24 is formed near the X-direction substantial middle portion left, Y-axis negative direction end of substrate 10a, and shown in the blacking arrow of Fig. 1, the pinning direction of magnetization of pinning layer is the Y-axis negative direction.

Each GMR element 11～14,21～24 has mutually the same structure in fact except different these points of the configuration in substrate 10a.Thereby, below be typical example with the first X-axis GMR element 11, describe with regard to its structure.

As planimetric map 2 and along the plane cutting of the 1-1 line of Fig. 2 constructed profile shown in Figure 3 of the first X-axis GMR element 11, the first X-axis GMR element 11 comprise by spin valve film SV constitute and Y direction as a plurality of arrowband 11a...11a of shape portion longitudinally and be formed on each 11a of arrowband shape portion vertical (Y direction) two ends the below promptly to have the magnetic bias film that the material of high-coercive force and angle of elevation type ratio constitutes by hard ferrimagnets such as CoCrPt (be the hard iron magnetic thin film layer, become the film of permanent magnetic film by magnetize) 11b...11b, magnetic bias film 11b...11b.Each 11a...11a of arrowband shape portion extends to X-direction on the upper surface of each magnetic bias film 11b...11b, and engage with the 11a of arrowband shape portion of adjacency, form so-called " meander-like ", the while is in upper surface and each the magnetic bias film 11b...11b magnetic coupling of each magnetic bias film 11b...11b.

Shown in the membrane structure among Fig. 4, layer C that bear down on one of the thickness 2.5nm (25 ) that the spin valve film SV of the first X-axis GMR element 11 is conductive spacer layer S, fixed bed (pinning layer) P of free layer (free layer) F on the substrate 10a, the thickness 2.4nm (24 ) that is made of Cu by stacking gradually at substrate, be made of titanium (Ti) or tantalum (Ta) constitutes.

The free layer F layer that to be its direction of magnetization change with external magnetic-field direction is made of the CoZrNb noncrystalline magnetosphere 11-1, the NiFe magnetosphere 11-2 that is formed on the thickness 3.3nm (33 ) on the CoZrNb noncrystalline magnetosphere 11-1, the CoFe layer 11-3 that is formed on about the thickness 1～3nm (10～30 ) on the NiFe magnetosphere 11-2 that are formed on the thickness 8nm (80 ) directly over the substrate 10a.CoZrNb noncrystalline magnetosphere 11-1 and NiFe magnetosphere 11-2 constitute the soft magnetic film layer.CoFe layer 11-3 is used to prevent the diffusion of the Cu11-4 of the Ni of NiFe magnetosphere 11-2 and laying S.

Fixed bed (pinning layer) P is the layer that the antiferromagnetic film 11-6 stack of the CoFe magnetosphere 11-5 of thickness 2.2nm (22 ) and thickness 24nm (240 ) forms, and this antiferromagnetic film 11-6 is formed by the PtMn alloy that comprises 45～55% (mole) Pt.CoFe magnetosphere 11-5 is attached on the antiferromagnetic film 11-6 of magnetize (magnetization) in the mode of exchange coupling, so that constitute the pinning layer of direction pinning (fixing) on the X-axis negative direction of magnetization (magnetization vector).

Magnetic bias film 11b...11b is used to keep the coaxial anisotropy of free layer F, and at this free layer F vertically is that Y-axis negative direction (by the direction shown in the hollow arrow of Fig. 1 and Fig. 2) upward applies bias field to free layer F.

The first X-axis GMR element 11 that constitutes like this, shown in the solid line of Fig. 5, relatively along external magnetic field that X-axis changes-Hc～+ scope of Hc in the proportional variation of resistance value and external magnetic field, this external magnetic field is shown in the dotted line of Fig. 5, along the external magnetic field that Y-axis changes, resistance value is roughly constant relatively.

Below, describe with coil 31～34,41～44 about initialization.As shown in figures 1 and 3, initialization with coil 31～34,41～44 respectively GMR element 11～14,21～24 roughly under, the 10b1 of the superiors by insulation course is embedded in the insulation course 10b2 of lower floor.Initialization has mutually the same shape with coil 31～34,41～44, and the GMR relative positions relation directly over corresponding with each is also mutually the same, and magnetic field is used in the initialization that each corresponding GMR element is applied the direction shown in Fig. 1 hollow core arrow.

Below, is that typical example describes with initialization with coil 31, this initialization is an essentially rectangular with the profile that coil 31 is wound into when looking squarely, has a plurality of initialization magnetic field generating unit 31a...31a, these a plurality of initialization, are extended going up straight line with the vertical vertical direction (X-direction) of the 11a of arrowband shape portion of this first X-axis GMR element 11 under the first X-axis GMR element of looking squarely 11 with magnetic field generating unit 31a...31a.In addition, initialization is connected with negative pole with the positive pole of stabilized voltage supply respectively with another end 31c with an end 31b of coil, when defined terms is set up, connect predetermined electric current to initialization with coil 31, shown in the hollow arrow of Fig. 1, magnetic field is used in the initialization that the feasible 11a of arrowband shape portion to the first X-axis GMR element 11 applies the Y-axis negative direction.

Below, describe about X-axis Magnetic Sensor (establishing the Magnetic Sensor that X-direction is the magnetic field detection direction) and the Y-axis Magnetic Sensor (establishing the Magnetic Sensor that Y direction is the magnetic field detection direction) that constitutes by described GMR element 11～14 and GMR element 21～24 respectively, the X-axis Magnetic Sensor is shown in the equivalent electrical circuit among Fig. 6 (A), by the lead that does not illustrate among Fig. 1, full-bridge type connects first～the 4th X-axis GMR element 11～14 and constitutes.Have again, in Fig. 6 (A), illustrate and the characteristic of the GMR element of each curve map adjacency (to the variation of the resistance value R of external magnetic field) at the curve map that illustrates on the adjoining position separately with first～the 4th X-axis GMR element 11～14.This point to Fig. 7 and Fig. 9 too.Hx in these curve maps, Hy illustrate its size respectively along X-axis and Y-axis and the external magnetic field that changes.

In such structure, the tie point of the tie point of the first X-axis GMR element 11 and the 4th X-axis GMR element 14, the second X-axis GMR element 12 and the 3rd X-axis GMR element 13 is connected with the positive pole that does not have illustrated stabilized voltage supply, negative pole (ground connection) respectively, gives current potential+V (being 5 (V) in this example) and current potential-V (being 0 (V) in this example) respectively.Then, take out the potential difference (PD) Vox of the tie point of the tie point of the first X-axis GMR element 11 and the 3rd X-axis GMR element 13 and the 4th X-axis GMR element 14 and the second X-axis GMR element 12, export as sensor.Its result, shown in Fig. 6 (B), the X-axis Magnetic Sensor shows the output voltage V ox that roughly is directly proportional and changes with the external magnetic field Hx that changes along X-axis.

The Y-axis Magnetic Sensor is shown in the equivalent electrical circuit of Fig. 7 (A), and by not having illustrated lead among Fig. 1, full-bridge type connects first～the 4th Y-axis GMR element 21～24 and constitutes.Then, the tie point of the tie point of the first Y-axis GMR element 21 and the 4th Y-axis GMR element 24, the second Y-axis GMR element 22 and the 3rd Y-axis GMR element 23 is connected with the positive pole that does not have illustrated stabilized voltage supply, negative pole (ground connection) respectively, gives current potential+V (being 5 (V) in this example) and current potential-V (being 0 (V) in this example) respectively.In addition, take out the potential difference (PD) Voy of the tie point of the tie point of the first Y-axis GMR element 21 and the 3rd Y-axis GMR element 23 and the 4th Y-axis GMR element 24 and the second Y-axis GMR element 22, export as sensor.Its result, shown in Fig. 7 (B), the Y-axis Magnetic Sensor shows the output voltage V oy that roughly is directly proportional and changes with the external magnetic field Hy that changes along Y-axis.It more than is the structure of the Magnetic Sensor 10 of N type.

On the other hand, S type Magnetic Sensor 50 as shown in Figure 1, comprises GMR element 51～54,61～64 and initialization with coil 71～74,81～84, has the structure identical with Magnetic Sensor 10, comprises X-axis Magnetic Sensor and Y-axis Magnetic Sensor.

That is, the X-axis Magnetic Sensor of Magnetic Sensor 50 is shown in the equivalent electrical circuit of Fig. 8 (A), and by not having illustrated lead among Fig. 1, full-bridge type connects first～the 4th X-axis GMR element 51～54 and constitutes.In such structure, the tie point of the tie point of the first X-axis GMR element 51 and the 4th X-axis GMR element 54, the second X-axis GMR element 52 and the 3rd X-axis GMR element 53 is connected with the positive pole that does not have illustrated stabilized voltage supply, negative pole (ground connection) respectively, gives current potential+V (being 5 (V) in this example) and current potential-V (being 0 (V) in this example) respectively.Then, take out the potential difference (PD) Vox between the tie point of the tie point of the first X-axis GMR element 51 and the 3rd X-axis GMR element 53 and the 4th X-axis GMR element 54 and the second X-axis GMR element 52, export as sensor.Its result, shown in Fig. 8 (B), the X-axis Magnetic Sensor shows the output voltage V ox that roughly is directly proportional and changes with the external magnetic field Hx that changes along X-axis.

In addition, the Y-axis Magnetic Sensor of Magnetic Sensor 50 is shown in the equivalent electrical circuit of Fig. 9 (A), and by not having illustrated lead among Fig. 1, full-bridge type connects first～the 4th Y-axis GMR element 61～64 and constitutes.Then, the tie point of the tie point of the first Y-axis GMR element 61 and the 4th Y-axis GMR element 64, the second Y-axis GMR element 62 and the 3rd Y-axis GMR element 63 is connected with the positive pole that does not have illustrated stabilized voltage supply, negative pole (ground connection) respectively, gives current potential+V (being 5 (V) in this example) and current potential-V (being 0 (V) in this example) respectively.In addition, take out the potential difference (PD) Voy between the tie point of the tie point of the 4th Y-axis GMR element 64 and the second Y-axis GMR element 62 and the first Y-axis GMR element 61 and the 3rd Y-axis GMR element 63, export as sensor.Its result, shown in Fig. 9 (B), the Y-axis Magnetic Sensor shows the output voltage V oy that roughly is directly proportional and changes with the external magnetic field Hy that changes along Y-axis.

Below, describe about the manufacture method of the Magnetic Sensor 10,50 that constitutes as mentioned above.At first, shown in Figure 10 as the plane, becoming on the rectangle quartz glass 10a1 of substrate 10a, 50a thereafter, with the distribution of regulation or stacked each insulation course 10b of formation while of LSI, formed initialization with after the coil 31～34,41～44,71～74,81～84 in insulation course 10b2, forming is thereafter that the insulation course 10b1 of the superiors is (with reference to Fig. 1～Fig. 3).

Then, island forms the film M of the described GMR element 11～14,21～24,51～54,61～64 of a plurality of formations.Specifically, form described magnetic bias film 11b, form the film M that constitutes described GMB element 11～1421～24,51～54,61～64 thereon.This film uses the ultrahigh vacuum device, builds up film to accurate thickness by successive layers.Film M makes wiring graph, forms a plurality of parts that become island GMR element.Form these films M, make as the dotted line cutting quartz glass 10a1 of the cutting action that passes through the back along Figure 10, it was divided into each Magnetic Sensor shown in Fig. 1 at 10,50 o'clock, and formation is configured to be located on each position of the GMR element 11～14,21～24,51～54,61～64 shown in this Fig. 1.

Below, shown in Figure 11 as the plane, prepare the sheet metal 91 of rectangle, it has formed a plurality of square through-holes (promptly with square dot matrix structure, the square through-hole that has the limit that is parallel to X-axis and Y-axis each other equally spacedly along X-axis and Y-axis setting), the permanent bar magnet 92...92 that will have with the roughly the same square sectional rectangular shape of this through hole inserts in each through hole of this sheet metal 91, makes the end face of the magnetic pole that forms this permanent bar magnet 92...92 be parallel to this sheet metal 91.At this moment, dispose this permanent bar magnet 92...92, make in the plane of each end face that comprises permanent bar magnet 92...92, the polarity difference of the magnetic pole of adjacency on bee-line.Have, the size of each magnetic charge of the permanent bar magnet 92...92 of use all about equally again.

Below, as show shown in Figure 12 along the section on X-Z plane, the plate 93 of preparing the about 0.5mm of thickness, constituting by transparency silica glass, this plate 93 has the rectangle with described sheet metal 91 roughly the same shapes, by the upper surface (face of a relative side) of the bonding permanent bar magnet 92...92 of bonding agent and the lower surface of plate 93, remove sheet metal 91 from the below with the end face that has formed described magnetic pole.In this stage, form the magnet array MA that constitutes in the following manner by permanent bar magnet 92...92 and plate 93, promptly, it is roughly foursquare a plurality of permanent magnets that roughly rectangular shape, vertical with some central shafts of this rectangular parallelepiped section configuration is set, make consistent with the lattice point place of center of gravity with square end faces and square lattice, simultaneously, make the polarity of magnetic pole of this permanent magnet different with polarity adjacent with it and the at interval magnetic pole of other permanent magnets of bee-line.

Figure 13 is the stereographic map that the state that has taken out 4 described permanent bar magnet 92...92 is shown.From this figure as can be known, form magnetic field in the end face (having formed the end face of described magnetic pole) of permanent bar magnet 92...92, this magnetic field is from a N utmost point.To different on 90 ° the direction separately with the shortest S utmost point of the distance of this N utmost point adjacency.In the present embodiment, use this magnetic field, the magnetic field during as the magnetic field of the magnetize of each magnetic bias film 11b～14b, 21b～24b of being used for GMR element 11～14,21～24,51～54,61～64,51b～54b, 61b～64b and the direction of magnetization of fixing each fixed bed P (pinning layer of fixed bed P).

That is, at first, as shown in figure 14, configuration has formed the quartz glass 10a1 that becomes the film of GMR element M, makes that having formed the face that becomes the film of this GMR element M is connected with the upper surface of plate 93, and is by anchor clamps C that plate 93 and quartz glass 10a1 is fixed to one another.At this moment, shown in Figure 15 as the plane, this figure is the starting point with the part that the back will become Magnetic Sensor 10,50, each has amplified the part of two Magnetic Sensors 10,50, relatively dispose this quartz glass 10a1 and magnet array MA, making becomes each intersection point CP of the line of cut CL of the quartz glass 10a1 on each limit of this Magnetic Sensor 10,50 center of gravity separately with permanent bar magnet 92...92 is consistent respectively.Thereby, shown in the arrow among Figure 15, on plate 93, placed in the state of quartz glass 10a1, each the film M that becomes the GMR element is applied the magnetic field longitudinally of the arrowband shape portion of this film M.

In the present embodiment, when utilizing relevant magnetic field to carry out the magnetize of magnetic bias film 11b～14b, 21b～24b, 51b～54b, 61b～64b, make the direction of magnetization of each magnetic region of free layer F consistent with direction in the original state.That is the magnetization of each magnetic region of initialization free layer F.

Below, shown in the planimetric map of Figure 16, change and to have formed the quartz glass 10a1 that becomes the film of GMR element M and the relative position relation of magnet array MA (plate 93), be configured to form the face that becomes the film of this GMR element M and be connected with the upper surface of plate 93.At this moment, relatively dispose this quartz glass 10a1 and magnet array MA, making becomes each intersection point CP of the line of cut CL of the quartz glass 10a1 on each limit of Magnetic Sensor 10,50 center of gravity with 4 permanent bar magnet 92...92 that adjoin each other is consistent respectively.Thereby, shown in the arrow among Figure 16, on plate 93 mounting in the state of quartz glass 10a1, each the film M that becomes the GMR element is applied the longitudinally magnetic field of direction perpendicular to the arrowband shape portion of this film M.

In the present embodiment, utilize the fixedly thermal treatment (regularization thermal treatment) of the direction of magnetization of fixed bed P (pinning layer of fixed bed P) of relevant magnetic field.That is, plate 93 and quartz glass 10a1 is fixed to one another in the state shown in Figure 16 by anchor clamps C, be heated to 250 ℃～280 ℃ in a vacuum, placed about 4 hours at this state.

Afterwards, take out quartz glass 10a1, form the distribution of each film M of connection etc., last, along dotted line (line of cut CL) the cutting quartz glass 10a1 shown in Figure 10 etc.Like this, just produce many Magnetic Sensors 10,50 shown in Fig. 1 simultaneously.

As mentioned above, described embodiment is owing to have magnetic bias film 11b～11b, it is made of permanent magnet, when being arranged on the two ends longitudinally of free layer F, make it on this free layer, produce the bias field of prescribed direction (this free layer vertically), therefore, can stablize the direction of magnetization of each magnetic region that does not have the free layer in the state of external magnetic field, and remain on the direction of regulation.

In addition, initialization is switched under rated condition with coil 31～34,41～44, because generation is used for the direction of magnetization of each magnetic region of free layer is turned back to the direction identical with the direction of the bias field that is produced by magnetic bias film (promptly, free layer vertically) initialization use magnetic field, therefore, even upset applying high-intensity magnetic field under the situation of direction of magnetization of each magnetic region of this free layer, also can reliably its direction of magnetization have been turned back to original state to free layer.Its result, because Magnetic Sensor 10,50 variations for the external magnetic field, it is very little to keep the magnetic hysteresis that this external magnetic field produced near time " 0 ", so can detect small magnetic field for a long time accurately.

In addition, according to the embodiment of described manufacture method, prepare magnet array MA, its constituted mode is, a plurality of permanent magnets are set on the lattice point of grid square, makes that the polarity of magnetic pole of each permanent magnet is different with the polarity of other magnetic poles of interval bee-line adjacency; Carry out the initialization of direction of magnetization of each magnetic region of free layer and the magnetize of magnetic bias film by the formed magnetic field of this magnet array MA, and make pinning (pinning) operation of the direction of magnetization pinning of the magnetosphere that becomes pinning layer.Thereby, a plurality of GMR elements of magnetic field detection direction difference (mutually vertical) can be on single substrate, efficiently and easily formed, the Magnetic Sensor that the single substrate by each magnetic field that can detect size variation on the orthogonal direction at least constitutes can be made at an easy rate.

In addition, at described embodiment,, making the laggard line discipline processing of figure gmr film M making figure magnetic bias film (magnet) back formation gmr film (film of GMR element).But this regularization is handled and also can be carried out before making gmr film M, in addition, also can form magnetic bias film behind gmr film.

Below, describe about other embodiment (second embodiment) of the Magnetic Sensor that the present invention relates to.The same with described Magnetic Sensor, the S type that planimetric map has been shown among N type that planimetric map has been shown among Figure 21 and Figure 22 is arranged in this Magnetic Sensor.N type Magnetic Sensor 110 and S type Magnetic Sensor 150, except different mutually this of direction of magnetization of the fixing direction of magnetization of the pinning layer shown in the blacking arrow in Figure 21 and Figure 22 and the init state of the free layer shown in the hollow arrow put, be of similar shape in fact and structure.Have again, in Figure 21 and Figure 22, omitted the diagram of initialization with coil.

Except the GMR element of the Magnetic Sensor 10 of N type and initialization were put with different this of the configuration of coil, the Magnetic Sensor 110 of N type had the structure identical with Magnetic Sensor 10.That is, the structure of Magnetic Sensor 110 comprises: the single substrate 110a identical with single substrate 10a; The insulation course identical with insulation course 10b; Be formed on 8 the GMR elements 111～114,121～124 that amount on the superiors of this insulation course; Amount to 8 initialization coil.GMR element 111～114,121～124 is identical with the relative position relation of coil 31～34,41～44 with GMR element 11～14,21～24 and initialization with the relative position relation of coil with 8 initialization.In addition, same with GMR element 11～14, full-bridge connects GMR element 111～114, constitutes the X-axis Magnetic Sensor.Same with GMR element 21～24, full-bridge connects GMR element 121～124, constitutes the Y-axis Magnetic Sensor.

The first X-axis GMR element 111 is formed near the Y direction substantial middle portion, X-axis negative direction end of substrate 110a.The second X-axis GMR element 112 be formed on substrate 110a Y direction substantial middle portion, leave on the position of some distances from the first X-axis GMR element 111 apart from the X-axis positive dirction.The 3rd X-axis GMR element 113 is formed near the Y direction substantial middle portion, X-axis positive dirction end of substrate 110a.The 4th X-axis GMR element 114 be formed on substrate 110a Y direction substantial middle portion, leave on the position of some distances from the 3rd X-axis GMR element 113 apart from the X-axis negative direction.Each of first～the 4th X-axis GMR element 111～114 is Y direction vertically.

The first Y-axis GMR element 121 is formed near the X-direction substantial middle portion, Y-axis positive dirction end of substrate 110a.The second Y-axis GMR element 122 be formed on substrate 110a X-direction substantial middle portion, leave on the position of some distances from the first Y-axis GMR element 121 apart from the Y-axis negative direction.The 3rd Y-axis GMR element 123 is formed near the X-direction substantial middle portion, Y-axis negative direction end of substrate 110a.The 4th Y-axis GMR element 124 be formed on substrate 110a X-direction substantial middle portion, leave on the position of some distances from the 3rd Y-axis GMR element 123 apart from the Y-axis positive dirction.Each of first～the 4th Y-axis GMR element 121～124 is X-direction vertically.

Except the GMR element of the Magnetic Sensor 50 of S type and initialization were put with different this of the configuration of coil, the Magnetic Sensor 150 of S type had the structure identical with Magnetic Sensor 50.That is, the structure of Magnetic Sensor 150 comprises: the single substrate 150a identical with single substrate 50a; The insulation course identical with insulation course 10b; Be formed on 8 the GMR elements 151～154,161～164 that amount on the superiors of this insulation course; Amount to 8 initialization coil.GMR element 151～154,161～164 is identical with the relative position relation of coil 71～74,81～84 with GMR element 51～54,61～64 and initialization with the relative position relation of coil with 8 initialization.In addition, same with GMR element 51～54, full-bridge connects GMR element 151～154, constitutes the X-axis Magnetic Sensor.Same with GMR element 61～64, full-bridge connects GMR element 161～164, constitutes the Y-axis Magnetic Sensor.

The position of the relative substrate 150a of first～the 4th X-axis GMR element 151～154 relation is identical with the position relation of the relative substrate 110a of first～the 4th X-axis GMR element 111～114.Each of first～the 4th X-axis GMR element 151～154 is Y direction vertically.In addition, the position of the relative substrate 150a of first～the 4th X-axis GMR element 161～164 relation is identical with the position relation of the relative substrate 110a of first～the 4th Y-axis GMR element 121～124.Each of first～the 4th Y-axis GMR element 161～164 is X-direction vertically.

Below, describe about the manufacture method of the Magnetic Sensor 110,150 that constitutes as mentioned above.In this manufacture method, use described magnet array MA and the magnet array MB that is different from magnet array MA.

At first, when having prepared magnet array MA, prepare magnet array MB by the method for the following stated by described method.Before the explanation of the manufacture method of this magnet array MB, illustrate about constituting the each several part of magnet array MB.Magnet array MB is made of with substrate 210, a plurality of permanent magnet (permanent bar magnet) 230 yoke (yoke plate) 200, array.

Yoke shown in Figure 23 to Figure 25 200.Figure 23 is the partial plan of yoke 200, and Figure 24 is the part enlarged drawing of Figure 23, Figure 25 be by along the plane cutting of the 2-2 line of Figure 24 the sectional view of yoke 200.This yoke 200 is the thin plates that are made of the magnetic material with magnetic susceptibility also higher than air (for example 42 alloys (Fe-42Ni alloy) etc.).Preferably yoke 200 is made of the saturated high magnetic permeable material of height (for example permalloy or silicon steel plate).The flat shape of yoke 200 is rectangles.The thickness of slab of yoke 200 is 0.15mm in this example.Yoke 200 has a plurality of through holes 201.Through hole 201 just is being considered as roughly square shape.A plurality of through holes 201 are arranged in square trellis.That is, the center of gravity of each through hole 201 is consistent with the square lattice point SP shown in Figure 24.In looking squarely, one side any limit that is parallel to the through hole 201 of adjacency of through hole 201.In other words, one side any one side of through hole 201 and being formed on and being present on same the straight line of this through hole 201 same other through holes 201 that list.

As show flat shape shown in Figure 26 of a through hole 201, in looking squarely, each through hole 201 has the shape that comprises square 201a of portion and edge part (circular arc shaped portion, R portion) 201b.The shape of the 201b of square portion is a square.Edge part 201b protrudes into this foursquare outside from each bight of the square 201b of portion.More particularly, the profile of edge part 201b is for having the circular shape of center RP on the diagonal line CR of the square 201a of portion.

At the through hole 201 of space bee-line adjacency each other, become the through hole 202 of air-gap.It is rectangle roughly that the shape of through hole 202 is looked squarely.The long limit of through hole 202 is parallel to the one side with the square 201b of portion of the through hole 201 of this through hole 202 adjacency.The same length on one side of the length on the long limit of through hole 202 and the square 201a of portion, or only a little short than the length on one side of the 201a of this square portion.The bond length of through hole 202 is big with the longitudinal length of the film M that forms GMR element 111～114,121～124,151～154,161～164.

Yoke 200 also has opening (flux regulator hole) 203.Opening 203 has surrounded in being formed on and looking squarely on the position of foursquare center of gravity SQ, and each lattice point SP of this square described grid square connected to each other forms.It is the central circular shape that opening 203 has with center of gravity SQ in looking squarely.

Array shown in Figure 27 and Figure 28 is substrates of having processed the thin plate 210a that is made of the magnetic material shown in Figure 29 (for example, Alperm) with substrate 210.Array has the shape roughly the same with yoke 200 with substrate 210 in looking squarely.Array has a plurality of groove 210b with substrate 210.A plurality of groove 210b are arranged in looking squarely the same place (same position) with the through hole 201 of yoke 200.The square 201a of portion of the shape of groove 210b and through hole 201 is roughly the same.

Permanent bar magnet 230 (with reference to Figure 31) has rectangular shape.The plane cutting that the central shaft of the length that permanent bar magnet 230 usefulness are relative with this rectangular parallelepiped is vertical the shape of the section behind the permanent bar magnet 230 form and the roughly the same square of through hole 201 (with groove 210b).The magnetic pole of permanent bar magnet 230 is formed near two end faces with described square shape.The size of each magnetic charge of a plurality of permanent bar magnets 230 all about equally.

Below, narration is about the manufacture method of magnet array MB.At first, prepare to become the plate body of yoke 200,, form through hole 201, through hole 202 and opening 203 by this plate body is implemented etching.Then, prepare to become the thin plate 210a of array,, form groove 210b by this thin plate 210a is implemented etching (etching partially) with substrate 210.

Below, shown in Figure 31 as three-dimensional Figure 30 and section, at the spreader 220 of array with configuration prism-shaped on the substrate 210.Spreader 220 is configured in row arbitrarily that are made of with a plurality of groove 210b of substrate 210 array and is parallel to these row and constitutes between a plurality of groove 210b of row of adjacency.When disposing spreader 220 in this wise, the Z-direction length of this spreader 220 is shorter than the length between the both ends of the surface of the magnetic pole that forms permanent bar magnet 230.Have again, in Figure 30, omitted edge part 201b.

Then, configuration yoke 200 on spreader 220.At this moment, configuration yoke 200 makes through hole 201 (the square 201a of portion) and the array of yoke 200 look squarely consistent with the groove 210b of substrate 210.In other words, on spreader 220, disposed in the state of yoke 200, made groove 210b and through hole 201 all in Z-direction.Have again, in order easily to carry out such configuration, the also mark (telltale mark) that can be provided for locating on substrate 210 at yoke 200 and array.

Then, in a plurality of through holes 201 of yoke 200, insert a plurality of permanent bar magnets 230 respectively.In that insert should be permanent during bar magnet 230, an end face of a magnetic pole of the permanent bar magnet 230 of formation is docked with the upper surface of array with the groove 210b of substrate 210.Its result, other end faces (being designated hereinafter simply as " upper surface ") that are configured to form other magnetic poles of a plurality of permanent bar magnets 230 are present in (on the same plane) in the roughly same plane.In addition, at this moment, in the described plane of the upper surface that comprises permanent bar magnet 230, dispose this permanent bar magnet 230, make the polarity difference of magnetic pole of bee-line adjacency.Its result has disposed permanent bar magnet 230 shown in figure 32.In this state,, can stop the moving to X-direction and Y direction of permanent bar magnet 230 by permanent bar magnet 230 is inserted in the through hole 201 of groove 210b and yoke 200.

Then, Yi Bian utilize the opening 203 of yoke 200, Yi Bian (Z axle positive dirction) lifts yoke 200 upward.More particularly, when using pinning that two openings 203 of clamping are installed, lift yoke 200.Use another opening 203 to carry out such action repeatedly, slowly lift yoke 200 integral body.At this moment, as shown in figure 33, adjust the height (matrix row with the distance of substrate 210) of yoke 200, make the formed plane of upper surface (having formed the summation of other end faces of the magnetic pole of a plurality of permanent bar magnets 230) of permanent bar magnet 230 between the upper surface 200up and lower surface 200dn of yoke 200.In other words, lift yoke 200, make the upper surface of permanent bar magnet 230 be positioned at the thickness of slab of yoke 200.Have again, also can make the plane of the upper surface 200up of yoke 200 and the upper surface formation of bar magnet 230 forever consistent.Afterwards, when extracting spreader 220, to array fixedly yoke 200 of substrate 210.By with on finish magnet array MB.

Figure 34 is the stereographic map that the state of the permanent bar magnet 230...230 that has taken out 4 magnet array MB is shown.From this figure as can be known, formation magnetic field in the upper surface (having formed the end face of described magnetic pole) of permanent bar magnet 230...230, this magnetic field from a N utmost point to different on 90 ° direction separately with the shortest S utmost point of the distance of this N utmost point adjacency.In the present embodiment, use the magnetic field that produces by this magnet array MB, as the magnetic field of the magnetize of each magnetic bias film that is used for GMR element 111～114,121～124,151～154,161～164.

This magnet array MB becomes the through hole 202 of air-gap each other at the different permanent bar magnet 230 of the polarity of the magnetic pole of interval bee-line adjacency (upper surface).Like this, as shown in figure 35, flux concentrating in through hole 202 and through hole 202 near in the space of part.In other words, magnet array MB can produce the magnetic field that intensity is big and direction is certain in the narrow area of space (near zone of through hole 202) of part.

Figure 36 and Figure 37 are the plan views of having represented the magnetic flux form of magnet array MB and magnet array MA respectively with arrow.By comparing this two figure as can be known, because magnet array MB not only has described through hole 202, also has opening 203, so the magnetic field that produces is linear, can produce than magnet array MA the stable and the same magnetic field of intensity in the part between the permanent bar magnet 230 of the heteropole of interval bee-line adjacency.

Owing to can prepare magnet array MA and MB by above, following explanation is about the concrete manufacture method of Magnetic Sensor 110 and 150.

At first, prepared substrate (quartz glass, as the single-chip of the substrate 110a1 shown in Figure 39 of aftermentioned explanation), this substrate have formed the film M that the back will become GMR element 111～114,121～124,151～154,161～164.Substrate 10a1 shown in this substrate and Figure 10 similarly forms.In addition, configuration is formed on the film M on the substrate, makes when the cutting action by the back has cut this substrate, forms the Magnetic Sensor one by one 110,150 shown in Figure 21 and Figure 22.

Below, shown in the planimetric map of Figure 38, configuration has formed described substrate and the magnet array MA (plate 93) that becomes the film of GMR element M, fixes their relative position relation.At this moment, make the face that has formed the substrate that becomes the film of GMR element M be connected (with reference to Figure 14) with the upper surface of plate 93.In addition, relatively dispose this substrate and magnet array MA, the center of gravity with 4 permanent bar magnet 92...92 that adjoin each other is consistent respectively to make each intersection point CP of line of cut CL of substrate on each limit that becomes Magnetic Sensor 110,150.Thereby, shown in the arrow among Figure 38, on magnet array MA, placed in the state of substrate, each the film M that becomes the GMR element is applied the longitudinally magnetic field of direction perpendicular to the arrowband shape portion of this film M.

In this second embodiment, utilize the fixedly thermal treatment of the direction of magnetization of fixed bed P (pinning layer of fixed bed P) of relevant magnetic field.That is, in the state shown in Figure 38, plate 93 and substrate are interfixed (with reference to Figure 14), in a vacuum they are heated to 250 ℃～280 ℃, keep this state and placed about 4 hours by anchor clamps C.

Then, as shown in figure 39, configuration has formed the substrate 110a1 that becomes the film of GMR element M, makes that having formed the face that becomes the film of this GMR element M is connected with the upper surface 200up of the yoke 200 of magnet array MB.At this moment, shown in part amplification view 40, relatively dispose this substrate 110a1 and magnet array MB, making becomes each intersection point CP of the line of cut CL of the substrate 110a1 on each limit of Magnetic Sensor 110,150 center of gravity with permanent bar magnet 230...230 is consistent respectively.At this moment, each the film M that becomes the GMR element is configured in the inboard of the opening 202 of the yoke of looking squarely 200.Its result has placed on the upper surface 200up of yoke 200 in the state of substrate 110a1, shown in the arrow among Figure 40, each the film M that becomes the GMR element is applied the magnetic field longitudinally of the arrowband shape portion of this film M.

In this second embodiment, when utilizing relevant magnetic field to carry out the magnetize of magnetic bias film, make the direction of magnetization of each magnetic region of free layer consistent with direction in the original state.That is the magnetization of each magnetic region of initialization free layer.

Then, take out substrate 110a1, form the distribution of each film M of connection etc.At last, along the line of cut CL cutting substrate 110a1 shown in Figure 38 and Figure 40.Like this, can produce (single substrate) Magnetic Sensor 110 of many monolithics shown in Figure 21 and (single substrate) Magnetic Sensor 150 of the monolithic shown in Figure 22 simultaneously.

Like this, in second embodiment, use magnet array MB to produce high-intensity magnetic field, carry out the magnetize of the magnetic bias film of GMR element by this magnetic field in the part.Magnet array MB has yoke 200, and this yoke 200 has formed the through hole 202 as the air-gap function.Thereby, can near through hole 202, produce the same magnetic field of intensity in the space by using magnet array MB, even therefore in magnetic bias film, used under the situation of the big magnetic material of coercive force, also can make this magnetic bias film magnetize reliably.Its result even applying interference (for example, strong external magnetic field) afterwards, also can provide a kind of energy of magnetization of free layer stably to return to the Magnetic Sensor 110,150 of the high reliability of inceptive direction.

In addition, magnetic field becomes and forms opening 203 on the unsettled part intersecting from the magnetic line of force of each magnetic pole in the yoke 200 of magnet array MB.Its result is because the directivity of the magnetic line of force is stable, so can make near the magnetic field the described through hole 202 further stable.When in addition, opening 203 array that is used to adjust magnet array MB is with the distance (height of yoke 200) of substrate 210 and yoke 200.Its result is because can be easily and adjust the position of yoke 200 ideally in short transverse, so can make the magnetic field of generation the best on the part at magnetic bias film place of the GMR element of wanting magnetize.

In addition, the through hole 201 of the yoke 200 of magnet array MB is not a square, but has the shape of edge part 201b, and this edge part 201b protrudes into this foursquare outside from foursquare each bight.Thereby, when having formed through hole 201,, also can in through hole 201, insert permanent bar magnet 230 reliably even under the inadequate situation of the etching in bight by etching.Have again, also such edge part can be set in the bight of groove 210b.

The present invention not only is defined in described embodiment, can adopt various variation within the scope of the invention.For example, as among Figure 20 being that typical example is shown with the first X-axis GMR element 301, the arrowband shape 301a of portion also can be separated by the top of the magnetic bias film 301b...301b that is arranged on its below, both ends.In addition, initialization also can be the coil of double screw type with coil 302, and this coil is connecting spiral winding 302-1 and the 302-2 that has center point P 1 and center point P 2 respectively.Under this situation, the one XGMR element 301 is configured between center point P 1 and the P2, its result, using on each wire portion of coil 302 by the initialization below the XGMR element 301, be parallel to each other and same direction flows through electric current (perpendicular to the direction longitudinally of each 301a of arrowband shape portion), produce the magnetic field that described initialization is used.In addition, initialization also can be a lattice coil with coil, also can be toroid winding.In addition, also can above or below coil, be provided with simultaneously in the described insulation course of (Z-direction) and check and use coil in this initialization, this inspections with the coil generation be used for perpendicular to initialization with initialization that coil produced with the direction in magnetic field on the inspection of function of each GMR element of inspection use magnetic field.

Claims (5)

1. magnet array, it has a plurality of permanent magnets, and described a plurality of permanent magnets are rectangular shape roughly, is square roughly perpendicular to the shape of the section of a central shaft of this rectangular parallelepiped, and on this roughly foursquare end face, be formed with magnetic pole perpendicular to this central shaft

Its each center of gravity with described roughly foursquare end face that disposes described a plurality of permanent magnets is consistent with the lattice point of grid square, simultaneously, the one side of one side and the described end face of another permanent magnet that is configured in same column that is configured in the described end face of a permanent magnet in described a plurality of permanent magnets that any one of described grid square lists is present on the roughly same straight line, the end face of described whole a plurality of permanent magnets is present on the roughly same plane, and the polarity difference of formed magnetic pole on the end face of two permanent magnets adjoining each other of the interval bee-line in described a plurality of permanent magnet.

2. magnet array, have a plurality of permanent magnets, and yoke with the plate-shaped that constitutes by magnetic material, described a plurality of permanent magnet is roughly rectangular shape, perpendicular to the shape of the section of a central shaft of this rectangular parallelepiped is square roughly, and on this roughly foursquare end face, be formed with magnetic pole perpendicular to this central shaft

Its each center of gravity with described roughly foursquare end face that disposes described a plurality of permanent magnets is consistent with the lattice point of grid square, simultaneously, the one side of one side and the described end face of another permanent magnet that is configured in same column that is configured in the described end face of a permanent magnet in described a plurality of permanent magnets that any one of described grid square lists is present on the roughly same straight line, the end face of described whole a plurality of permanent magnets is present on the roughly same plane, and the polarity difference of the magnetic pole that forms on the end face of two permanent magnets that the interval bee-line in described a plurality of permanent magnet adjoins each other

Described yoke with the roughly the same position of a plurality of permanent magnets of described configuration on have the roughly the same through hole of shape of the described roughly foursquare section of a plurality of shapes and this permanent magnet, in this through hole, insert this permanent magnet, exist the plane of the end face of described permanent magnet to be present between the upper surface and lower surface of this yoke.

3. magnet array as claimed in claim 2 is characterized in that,

The through hole that the interval bee-line of described yoke in described a plurality of through holes adjoins each other forms the through hole that becomes air-gap each other.

4. magnet array as claimed in claim 3 is characterized in that,

Described yoke forms opening on the position that surrounds foursquare center of gravity, described square connects described grid square in looking squarely each lattice point forms.

5. as each described magnet array of claim 2 to 4, it is characterized in that,

Each through hole of described yoke has square portion and edge part, described square portion be in looking squarely with the roughly the same square of the roughly foursquare section of having of described permanent magnet, described edge part has protruded into this foursquare outside from each bight of this square portion.

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