CN1873392A - Detector converted on infrared wavelength, near-infrared wavelength - Google Patents
Detector converted on infrared wavelength, near-infrared wavelength Download PDFInfo
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- CN1873392A CN1873392A CN 200610028489 CN200610028489A CN1873392A CN 1873392 A CN1873392 A CN 1873392A CN 200610028489 CN200610028489 CN 200610028489 CN 200610028489 A CN200610028489 A CN 200610028489A CN 1873392 A CN1873392 A CN 1873392A
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Abstract
The invention discloses infrared-near-infrared wavelength conversion detector which can integrate InAs multi-quantum point infrared detector and light-emitting diode into one chip. The former is made up of InAs/InyGa1-yAs/GaAs which alternately grows for ten cycles. The latter is made up of GaAs barrier layer and InzGa1-zAs active potential well layer. It can transform long wave thermal infrared to near infrared light without grating. This can simplify detecting system structure. The used material has mature preparation technology and good uniformity.
Description
Technical field
The present invention relates to quantum dot infrared detector and light emitting diode, specifically be meant quantum dot infrared detector (QDIP) and light emitting diode (LED) effective integration conversion detector on the infrared-near-infrared wavelength on the chip piece.
Background technology
Traditional infrared eye adopts focal plane array technology more.The signal of each photodetection unit is sent into outside silicon sensing circuit in the array, and converts vision signal output to.Each photosensitive unit of this structural requirement forms a corresponding POI on the silicon sensing circuit.The information translation that therefore will exactly focal plane array be listed is to the interlink node of correspondingly huge amount, this structure has proposed very high requirement to interconnected, refrigeration power consumption, the sensing circuit of device, make that also the integrated system between this different materials is expensive and unreliable, thermal shock effect with non-refrigeration cycle process especially is vulnerable to freeze.
In recent years, along with the maturation of GaAs based quantum well material preparation process and led technology, the integrated upconverter spare that grows GaAs based quantum well and the near-infrared luminous diode of GaAs base single quantum well interband transition.This device can convert mid and far infrared light easily by the near infrared light of CCD camera imaging to by effective series connection of GaAs based quantum well and near infrared light light emitting diode.Thereby the interconnected and big refrigerating capacity needs of problems of the sensing circuit of having avoided general infrared eye to face has been simplified system architecture, has reduced cost.
Yet its main deficiency of present quantum trap infrared detector has: it is little and quantum efficiency that cause is low that material aligns the incident radiation absorption coefficient of light, and carrier lifetime is short and responsiveness that cause is low and dark current is big etc.So the upconverter spare of the near-infrared luminous diode of GaAs based quantum well infrared eye and GaAs base single quantum well interband transition must have above-mentioned shortcoming.
Because producing three-dimensional quantum limitation effect to wherein charge carrier, the quantum dot in the quantum dot infrared detector (effectively unit) make it have the responsiveness higher than quantum trap infrared detector, low dark current and can under the normal incidence condition, absorb infrared photon, so need not to make grating, this has just simplified process conditions on the basis that guarantees device performance.But also can improve the face battle array scale of unit area greatly, this is because quantum trap infrared detector adopts the grating coupling to incident light, photosensitive unit is about three times of grating cycle, and the grating cycle is about the wavelength of infrared radiation in material under optimal conditions.Infrared radiation with 10 mum wavelengths is an example, and the grating cycle is about
Be about～5 μ m (n is the refraction coefficient of GaAs), like this, effective photosensitive first dimension is about～15 μ m on the quantum trap infrared detector.So, 1mm
2Quantum trap infrared detector spare 66 * 66 effective photosensitive units are arranged approximately.And quantum dot infrared detector need not to make grating, and its effective photosensitive first dimension can be controlled at the diffraction limit of infrared radiation, is about 2～3 μ m.So, 1mm
2Quantum dot infrared detector spare can have 333 * 333～500 * 500 effective photosensitive units, this has just improved the face battle array scale of unit area greatly, thereby has improved detection efficiency greatly.
Summary of the invention
At above-mentioned prior art situation, the objective of the invention is to propose conversion detector on a kind of infrared-near-infrared wavelength of quantum dot infrared detector integrated light-emitting diode device.
The conversion detector of going up of the present invention comprises: GaAs substrate 1 is arranged in order growth lower electrode layer 2, intrinsic GaAs wall 3, InAs quantum dot infrared detector 4, intrinsic GaAs wall 5, single quantum well light emitting diode 6, intrinsic Al on the GaAs substrate
xGa
1-xAs gradual change barrier layer 7, doped with Al
xGa
1-xAs transition bed 8, gradual change Al
xGa
1-xAs transition bed 9, upper electrode layer 10.
Said many quantum dot infrared detectors 4 are by the alternating growth InAs/In in 10 cycles
yGa
1-yAs/GaAs forms, and wherein the InAs quantum dot layer is about 2 atomic layers by the growth of self-organization method, and the average density of InAs quantum dot is 100～120/μ m
2In
yGa
1-yThe As layer is about 20 atomic layers, y=0.15.The GaAs barrier layer is about 130 atomic layers;
Said single quantum well light emitting diode 6 is by GaAs barrier layer and In
zGa
1-zThe active potential well layer of As is formed, and the z value is 0.1.The GaAs barrier layer is 30nm, In
zGa
1-zThe As potential well layer is 9nm;
Said intrinsic Al
xGa
1-xAs gradual change barrier layer 7 is 40nm, from 0.1 to 0.28 gradual change of x value;
Said doped with Al
xGa
1-xAs transition barrier layer 8 is 40nm, and the x value is 0.28.
Said gradual change Al
xGa
1-xAs transition bed 9 is 40nm, from 0.28 to 0.1 gradual change of x value;
Said upper electrode layer 10 is a 200nm GaAs layer.
In the single quantum well light emitting diode, utilize active potential well layer In
zGa
1-zThe energy gap of As changes with the In content, suitably regulates component, can realize the light emitting diode of different-waveband, to adapt to the detectivity of CCD camera.So select the GaAs sill InAs quantum dot infrared detector of both can having grown, can prepare the light emitting diode of different wave length again, can fine realization integrated.
The groundwork process of device of the present invention is: when adding constant bias at these series connection device two ends, this bias voltage will act on many quantum dot infrared detectors and the light emitting diode simultaneously.When infrared light entered QDIP, QDIP absorbed infrared radiation and causes that sub-band transition produces movably free electron.These electronics inject LED under electric field action, in active area and the hole-recombination of LED, send near infrared light.Because QDIP is the guide type device, when absorbing the infrared radiation of varying strength, the reduction of its resistance value is also different, so be added in the also corresponding difference of the voltage at LED two ends, causes the LED luminous intensity also different.So if the radiation of incident is inhomogeneous, the electronics of QDIP causes that output near infrared light intensity correspondingly is also inhomogeneous after injecting LED.Promptly under the situation of no obvious optics cross-talk, the space distribution of output near infrared light has repeated the distribution of photogenerated current among the QDIP, has also repeated the space distribution of input infrared radiation in turn.By the device of this series connection, realized of the go up conversion of thermal infrared photon in brief, promptly realized infrared image is converted to the near infrared light wave band image that the CCD camera can be surveyed easily to the near infrared photon.
Device of the present invention has following good effect and advantage:
1, this device can convert mid and far infrared light to easily by the near infrared light of silicon CCD imaging, and the sensing circuit of having avoided general infrared eye to face is interconnected and need big refrigerating capacity problem, simplify system architecture, has reduced cost.
2, the quantum dot infrared detector of this device partly has higher responsiveness, and low dark current and can absorb infrared photon under the normal incidence condition so need not to make grating, has further been simplified system process.
3, because this device need not to make grating, contrast QWIP-LED has just improved the face battle array scale of unit area greatly, thereby has improved detection efficiency greatly.
4, device material therefor mature preparation process of the present invention, material homogeneity is good.
Description of drawings
Fig. 1 is the structural representation sketch of detector of the present invention
Being with and the physical process synoptic diagram of Fig. 2 device.
Embodiment
Infrared absorption peak with QDIP is set near 8～9 microns below, and the peak wavelength of the EL of LED spectrum is embodiment at 870nm, in conjunction with the accompanying drawings concrete structure of the present invention is described in further detail:
Detector of the present invention is the typical technology that utilizes epitaxial growth of semiconductor material, as molecular beam epitaxy technique, is arranged in order growth on Semi-insulating GaAs substrate 1:
n
*-GaAs lower electrode layer 2, thickness are 800nm, and doping content is 1.5 * 10
18Cm
-3
The In of 401,20 atomic layers of InAs quantum dot layer of 2 atomic layers in 10 cycles of alternating growth
yGa
1-yThe GaAs barrier layer 403 of As potential well layer 402 and 130nm thick atom layer forms a quantum dot infrared detector 4 thus, and the average density of InAs quantum dot is 100～120/μ m
2, the y value is 0.15;
The thick GaAs intrinsic layer 5 of growth 30nm;
Then be the thick GaAs base layer of 30nm, the eigen I n that 9nm is thick
zGa
1-zThe GaAs barrier layer that As active layer and 30nm are thick forms a single quantum well light emitting diode 6, and the z value is 0.1;
Then be the intrinsic Al of 40nm
xGa
1-xAs gradual change barrier layer 7, from 0.1 to 0.28 gradual change of x value;
The P type Al of 40nm
xGa
1-xAs transition bed 8, doping content is from 2 * 10
18Cm
-3To 8 * 10
18Cm
-3, the x value is 0.28;
The P type gradual change Al of 40nm
xGa
1-xAs transition bed 9, from 0.28 to 0.1 gradual change of x value, doping content is 8 * 10
18Cm
-3
At last, cover thereon and go up P type GaAs electrode layer 10, doping content is 1 * 10
19Cm
-3, finish the preparation of far infrared-near-infrared wavelength conversion detector.
Claims (2)
1. conversion detector on one kind infrared near-infrared wavelength, comprising: GaAs substrate (1) is characterized in that:
On the GaAs substrate, be arranged in order growth lower electrode layer (2), intrinsic GaAs wall (3), the many quantum dot infrared detectors of InAs (4), intrinsic GaAs wall (5), single quantum well light emitting diode (6), intrinsic Al
xGa
1-xAs gradual change barrier layer (7), doped with Al
xGa
1-xAs transition bed (8), gradual change Al
xGa
1-xAs transition bed (9), upper electrode layer (10);
2. according to conversion detector on a kind of infrared-near-infrared wavelength of claim 1, it is characterized in that: said many quantum dot infrared detectors (4) are by the alternating growth InAs/In in 10 cycles
yGa
1-yAs/GaAs forms, y=0.15; Wherein InAs quantum dot layer (401) is 2 atomic layers, and the quantum dot average density is 100-120/μ m
2In
yGa
1-yAs layer (402) is 20 atomic layers; GaAs barrier layer (403) is 130 atomic layers;
Said single quantum well light emitting diode (6) is by GaAs barrier layer and In
zGa
1-zThe active potential well layer of As is formed, and the z value is 0.1, and the GaAs barrier layer is 30nm, In
zGa
1-zThe As potential well layer is 9nm;
Said intrinsic Al
xGa
1-xAs gradual change barrier layer (7) is 40nm, from 0.1 to 0.28 gradual change of x value;
Said doped with Al
xGa
1-xAs transition barrier layer (8) is 40nm, and the x value is 0.28;
Said gradual change Al
xGa
1-xAs transition bed (9) is 40nm, from 0.28 to 0.1 gradual change of x value.
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|---|---|---|---|
| CNB2006100284899A CN100498288C (en) | 2006-06-30 | 2006-06-30 | Detector converted on infrared wavelength, near-infrared wavelength |
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| CNB2006100284899A CN100498288C (en) | 2006-06-30 | 2006-06-30 | Detector converted on infrared wavelength, near-infrared wavelength |
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| CN100498288C CN100498288C (en) | 2009-06-10 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100580923C (en) * | 2007-12-07 | 2010-01-13 | 中国科学院上海技术物理研究所 | Quanta trap infrared detector for multi-folded light dispersion coupling |
| CN102629637A (en) * | 2011-12-22 | 2012-08-08 | 清华大学 | Wavelength up-conversion device containing quantum cascade structure |
| CN102832289A (en) * | 2012-08-13 | 2012-12-19 | 上海交通大学 | Terahertz imaging device based on photon frequency up-conversion, and conversion method |
| CN103808416A (en) * | 2012-11-02 | 2014-05-21 | 马克西姆综合产品公司 | System and method for reducing ambient light sensitivity of infrared (IR) detectors |
| CN108011017A (en) * | 2017-11-27 | 2018-05-08 | 清华大学 | Up-conversion device and material and its manufacture method |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5567955A (en) * | 1995-05-04 | 1996-10-22 | National Research Council Of Canada | Method for infrared thermal imaging using integrated gasa quantum well mid-infrared detector and near-infrared light emitter and SI charge coupled device |
| CA2210831C (en) * | 1996-07-19 | 2003-10-28 | Hui-Chun Liu | Image conversion panel and associated methods |
| CA2268997C (en) * | 1998-05-05 | 2005-03-22 | National Research Council Of Canada | Quantum dot infrared photodetectors (qdip) and methods of making the same |
| US6576490B2 (en) * | 2001-05-09 | 2003-06-10 | National Research Council Of Canada | Method for micro-fabricating a pixelless infrared imaging device |
| CN1225802C (en) * | 2003-06-26 | 2005-11-02 | 中国科学院上海技术物理研究所 | Method for increasing luminous efficiency of InAs/GaAs quantum point semconductor material |
| US6906326B2 (en) * | 2003-07-25 | 2005-06-14 | Bae Systems Information And Elecronic Systems Integration Inc. | Quantum dot infrared photodetector focal plane array |
| TWI269355B (en) * | 2004-12-29 | 2006-12-21 | Ind Tech Res Inst | Quantum-dot infrared photodetector |
| CN100392870C (en) * | 2005-09-23 | 2008-06-04 | 中国科学院上海技术物理研究所 | Self-amplifying infrared detector |
| CN100424897C (en) * | 2005-09-28 | 2008-10-08 | 中国科学院上海技术物理研究所 | Gallium nitride-base infrared visable wavelength conversion detector |
-
2006
- 2006-06-30 CN CNB2006100284899A patent/CN100498288C/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100580923C (en) * | 2007-12-07 | 2010-01-13 | 中国科学院上海技术物理研究所 | Quanta trap infrared detector for multi-folded light dispersion coupling |
| CN102629637A (en) * | 2011-12-22 | 2012-08-08 | 清华大学 | Wavelength up-conversion device containing quantum cascade structure |
| CN102629637B (en) * | 2011-12-22 | 2014-12-24 | 清华大学 | Wavelength up-conversion device containing quantum cascade structure |
| CN102832289A (en) * | 2012-08-13 | 2012-12-19 | 上海交通大学 | Terahertz imaging device based on photon frequency up-conversion, and conversion method |
| CN102832289B (en) * | 2012-08-13 | 2015-10-28 | 上海交通大学 | Based on terahertz imaging device, conversion method that photon frequency is changed |
| CN103808416A (en) * | 2012-11-02 | 2014-05-21 | 马克西姆综合产品公司 | System and method for reducing ambient light sensitivity of infrared (IR) detectors |
| CN108011017A (en) * | 2017-11-27 | 2018-05-08 | 清华大学 | Up-conversion device and material and its manufacture method |
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| Publication number | Publication date |
|---|---|
| CN100498288C (en) | 2009-06-10 |
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