CN1872900A - 具有增强的抛光均匀性的二氧化铈浆液组合物 - Google Patents
具有增强的抛光均匀性的二氧化铈浆液组合物 Download PDFInfo
- Publication number
- CN1872900A CN1872900A CNA2006100834808A CN200610083480A CN1872900A CN 1872900 A CN1872900 A CN 1872900A CN A2006100834808 A CNA2006100834808 A CN A2006100834808A CN 200610083480 A CN200610083480 A CN 200610083480A CN 1872900 A CN1872900 A CN 1872900A
- Authority
- CN
- China
- Prior art keywords
- cmp
- serosity combination
- amount
- polishing
- chemical mechanical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 52
- 239000000203 mixture Substances 0.000 title claims abstract description 17
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 title claims abstract description 12
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 title claims abstract description 12
- 239000002002 slurry Substances 0.000 title abstract description 15
- 150000003839 salts Chemical class 0.000 claims abstract description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 7
- -1 alcohol compound Chemical class 0.000 claims abstract description 6
- 239000000126 substance Substances 0.000 claims abstract 7
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims description 12
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 10
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 6
- TVXBFESIOXBWNM-UHFFFAOYSA-N Xylitol Natural products OCCC(O)C(O)C(O)CCO TVXBFESIOXBWNM-UHFFFAOYSA-N 0.000 claims description 6
- HEBKCHPVOIAQTA-UHFFFAOYSA-N meso ribitol Natural products OCC(O)C(O)C(O)CO HEBKCHPVOIAQTA-UHFFFAOYSA-N 0.000 claims description 6
- HEBKCHPVOIAQTA-SCDXWVJYSA-N xylitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)CO HEBKCHPVOIAQTA-SCDXWVJYSA-N 0.000 claims description 6
- 239000000811 xylitol Substances 0.000 claims description 6
- 229960002675 xylitol Drugs 0.000 claims description 6
- 235000010447 xylitol Nutrition 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 4
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 4
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 4
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 claims description 3
- JCBPETKZIGVZRE-UHFFFAOYSA-N 2-aminobutan-1-ol Chemical class CCC(N)CO JCBPETKZIGVZRE-UHFFFAOYSA-N 0.000 claims description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical class CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 claims description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 2
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- 229920001451 polypropylene glycol Polymers 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 2
- 238000000034 method Methods 0.000 abstract description 19
- 238000002955 isolation Methods 0.000 abstract description 9
- 230000008569 process Effects 0.000 abstract description 8
- 239000002253 acid Substances 0.000 abstract description 4
- 230000003628 erosive effect Effects 0.000 abstract description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 23
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 23
- 235000012431 wafers Nutrition 0.000 description 12
- 239000002245 particle Substances 0.000 description 11
- 229910000420 cerium oxide Inorganic materials 0.000 description 10
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229920002125 Sokalan® Polymers 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 210000003323 beak Anatomy 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000004584 polyacrylic acid Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 241000293849 Cordylanthus Species 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
公开了化学机械抛光(CMP)浆液组合物。该化学机械抛光浆液(CMP)组合物包括:二氧化铈研磨剂;重均分子量为50,000-500,000的聚羧酸或其盐;醇化合物和水。优选地,相对于总的浆液组合物,该二氧化铈研磨剂的量为0.1-20%重量比,该聚羧酸或其盐的量为0.01-20%重量比,该醇化合物的量为0.001-10%重量比,且该浆液组合物具有5-10的pH值。该CMP浆液组合物用于STI(浅槽隔离)方法的CMP过程以形成多层结构,增强抛光均匀性,并抑制晶片的凹陷和侵蚀。
Description
发明领域
本发明涉及具有增强的抛光均匀性的二氧化铈浆液组合物,更特别地,涉及化学机械抛光(CMP)浆液组合物,其对于硅片具有增强的抛光均匀性,并可抑制该晶片的凹陷(dishing)和侵蚀(erosion)。
发明背景
最近,由于半导体装置制造技术的开发,以及存储装置的应用日益广泛,开发了高容量存储装置。存储装置的容量扩增技术是基于微处理技术,该微处理技术的精密度每一代都要增加2倍。特别地,降低隔离电路装置的装置隔离层尺寸变得重要。LOCOS(硅的局部氧化)通常用作装置隔离技术,其是在晶片表面的所需位置上选择性地生长厚SiO2层以形成装置隔离层的技术。但是,因为该装置隔离层的侧扩散和鸟嘴效应(bird’s beak),所以上述的LOCOS存在减少活动区(active area)的缺点。因此,当高容量存储装置的临界尺寸小于亚微米时,LOCOS不是优选的,因而新装置隔离技术是必不可少的。因此,开发并使用了STI(浅槽隔离)方法。STI方法中,在晶片上形成槽,用CVD(化学气相沉积)在该槽中形成场氧化层,以及用CMP(化学机械抛光)完成平坦化(planarization)过程。参考图1,在下文中说明了用于形成半导体装置隔离层的常规STI方法。首先,在晶片表面1上形成具有
厚度的SiO2层2,并用CVD方法在其上形成具有
厚度的氮化硅层3。然后,通过使用光刻胶在该SiO2层2和氮化硅层3上形成图案,并在通过形成图案的SiO2层2和氮化硅层3曝光的晶片1上形成槽4。槽4的深度可根据所生产的半导体装置的设计规则而变化,且通常为
随后,除去剩余的光刻胶,用CVD方法沉积场氧化层5,使其厚度为
用抛光浆液平坦化该场氧化层。
在所述STI方法中,不形成鸟嘴,并且绝缘区不侵入半导体装置的活动区。而且,由于该绝缘区尺寸大幅降低,因而可减小装置的尺寸。在该STI方法中,将氮化硅层3沉积在硅片1上以阻止过度的抛光,并防止O2和H2O的扩散。在使用常规硅浆液的情况下,对场氧化层5与氮化硅层3的抛光选择性低,大约是4∶1。当抛光选择性低时,在CMP过程中,充当抛光阻止层的氮化硅层3可被抛光,这导致活动区的劣化。此外,在除去氮化硅层3后,SiO2层2的厚度可能变得不规则,这导致不均匀的电特性。
当用抛光浆液进行CMP过程时,场氧化层5和氮化硅层3用不同的抛光速率抛光,因此,可能发生凹陷和侵蚀。如图2所示,凹陷6意味场氧化层5被过度抛光,因此装置隔离区形成凹陷。侵蚀7意味着以高密度形成装置图案的区域与以低密度形成装置图案的区域相比抛光更加过度,因此以高密度形成装置图案的区域形成凹陷。
在形成装置隔离层的过程中,当出现凹陷6时,电路电阻或接触电阻增加,并且由于电迁移该装置的可靠性劣化。而且,当出现侵蚀7时,该晶片表面的均匀性劣化(这在多层结构中更严重),并且电路电阻增加并变得不均匀。
发明概述
因此,本发明的目的是提供CMP浆液组合物,该CMP浆液组合物改进场氧化层相对氮化硅层的抛光选择性,并能够提高抛光表面的均匀性。
本发明的另一目的是提供CMP浆液组合物,该CMP浆液组合物减少凹陷和侵蚀,并能够改善半导体装置的品质。
为了实现这些目定,本发明提供CMP浆液组合物,该CMP浆液组合物包含:二氧化铈研磨剂;重均分子量为50,000-500,000的聚羧酸(polycarboxylic acid)或其盐;醇化合物;和水。优选地,相对于总的浆液组合物,二氧化铈研磨剂的量为0.1-20%重量比,该聚羧酸或其盐的量为0.01-20%重量比,该醇化合物的量为0.001-10%重量比,并且该浆液组合物的pH值为5-10。
附图的简要说明
图1是硅片的截面图,其上依次形成有SiO2层、氮化硅层、槽和场氧化层。
图2是图1硅片的截面图,该硅片是用常规的CMP浆液组合物抛光的。
图3是图1硅片的截面图,该硅片是用本发明的CMP浆液组合物抛光的。
发明的详细说明
参考以下详细说明可以更好更完整地理解本发明及其诸多优点。
本发明所述的CMP浆液组合物中使用的研磨剂实现氮化硅层和/或场氧化层的机械抛光,并包括二氧化铈(氧化铈)粒子。优选用于该研磨剂的氧化铈粒子具有高纯度。优选地,该研磨剂中纯氧化铈的量大于99.0%重量比,更优选地,大于99.9%重量比。在使用具有较低纯度的研磨剂粒子的情况下,甚至在洗涤半导体装置后,杂质仍可残留,并且所残留的杂质严重地影响该半导体的品质,这可导致缺陷率的增加和制造产量的减少。所述氧化铈研磨剂的量可根据诸如压力等等的抛光条件而改变,并且相对于总的浆液组合物,优选为0.1-20%重量比,更优选为0.5-10%重量比。当该氧化铈研磨剂的量小于0.1%重量比时,可降低场氧化层的抛光速率。相反,当该氧化铈研磨剂的量大于20%重量比时,可降低研磨剂碾磨过程中的经济效率。所述氧化铈粒子的平均粒度优选为10-500nm,更优选为50-300nm。当氧化铈粒子的平均粒度小于10nm时,所述CMP过程中的抛光速率降低,但是当氧化铈粒子的平均粒度大于500nm时,可在抛光的表面产生微痕。
为了改进场氧化层相对氮化硅层的抛光选择性,本发明所述的CMP浆液组合物包含重均分子量50,000-500,000的聚羧酸或其盐。当该聚羧酸或其盐的重均分子量小于50,000时,难以获得合适的场氧化层相对氮化硅层的抛光选择性。相反,当该聚羧酸或其盐的重均分子量大于500,000时,该浆液的粘度增加,因而降低了该浆液的稳定性。相对于总的浆液组合物,该聚羧酸或其盐的量优选为0.01-20%重量比,更优选为0.05-10%重量比。当该聚羧酸或其盐的量小于0.01%重量比时,场氧化层相对氮化硅层的抛光选择性降低,但是当该聚羧酸或其盐的量大于20%重量比时,抛光速率易降低。
另外,本发明所述的CMP浆液组合物包括醇化合物以改进抛光均匀性。优选的醇化合物包括甲醇、乙醇、丙醇、丁醇、戊醇、木糖醇、聚乙二醇、三甘醇、聚丙二醇、2-氨基-1-丁醇、新戊二醇等等,及其混合物。更优选地,可使用木糖醇、聚乙二醇和三甘醇。相对于总的浆液组合物,该醇化合物的量优选为0.001-10%重量比,更优选为0.005-5%重量比。当该醇化合物的量小于0.001%重量比时,不能充分地增强抛光均匀性,但是当该醇化合物的量大于10%重量比时,其经济性不佳。
本发明所述CMP浆液组合物的pH值优选为5-10。可通过使用常规的酸、碱作为pH调节剂来控制本发明所述CMP浆液组合物的pH值,特别是磷酸、盐酸、硫酸、硝酸、氨水、氢氧化钾、羟化四甲铵(TMAH)。该pH调节剂的量可根据所需pH而改变,且不能劣化其它组分的所需特性。当该抛光浆液的pH值小于5或大于10时,所述氧化铈粒子的分散稳定性劣化,并且所述CMP过程中的场氧化层和氮化硅层的去除速率降低。
本发明所述CMP浆液组合物的剩余组分是水,并优选为去离子水。而且,如果需要,本发明所述CMP浆液组合物还可包括额外的用于防止因该组合物的贮存、老化等等导致的凝胶化和粒子沉淀,并维持该组合物的分散稳定性的分散剂;用于减少由该CMP浆液组合物的pH变化诱导的效应的缓冲溶液;和用于减少该CMP浆液组合物粘度的各种盐。
本发明所述的CMP浆液组合物具有相比氮化硅层增加的场氧化层抛光速率,并能够将场氧化层相对氮化硅层的抛光选择性维持在至少为10,优选大于20。另外,本发明所述的CMP浆液组合物能够提高抛光均匀性,并减少所述晶片的凹陷和侵蚀,因此,特别适用于诸如STI方法的用于形成半导体多层结构的微电路图案形成方法(见图3)。
下文中,为了更好地理解本发明,提供了优选的实施例。但是,本发明不限于以下实施例。
实施例1-7和比较实施例1-2
为了评价二氧化铈浆液的品质,如下所述制备CMP浆液组合物,并用该CMP组合物进行化学机械抛光。首先,为了评价聚羧酸和木糖醇的作用,制备所述CMP浆液组合物,该CMP浆液组合物包括1.0%重量比的二氧化铈、如表1所示量的聚丙烯酸(重均分子量为300,000)和木糖醇、其余为去离子水。用TMAH控制该浆液的pH值。为了评价该浆液组合物的抛光效果,用高密度等离子体(HDP)方法在晶片上沉积具有
厚度的SiO2层。并用低压CVD方法沉积具有
厚度的氮化硅层。所述场氧化层和所述氮化硅层用由Speedfam公司制造的“MomantumTM”抛光设备、由Rodel公司制造的“IC1400pad”,和上述浆液组合物进行抛光。在抛光后,测定抛光速率,并从中计算抛光选择性。通过用所测定的抛光速率的标准差除以平均抛光速率来计算抛光均匀性。抛光条件如下:600rpm的滚筒速度、4.8psi的平均下压、200ml/min的浆液补充速率。而且,用由TENCOR公司制造的“KLA2531”设备测量微痕的数目。
[表1]
如表1所示,实施例中制备的浆液组合物显示出大幅增强的场氧化层相对氮化硅层的抛光选择性,并改进所抛光的晶片的抛光均匀性。与实施例中制备的浆液组合物相比,比较实施例1中制备的不含聚丙烯酸的浆液组合物显示出较低的抛光选择性。比较实施例2中制备的不含木糖醇的浆液组合物与实施例中制备的浆液组合物相比,显示出降低的场氧化层和氮化硅层的抛光均匀性。
实施例8-10和比较实施例3
为了测量所抛光的晶片上的凹陷,如表2所示制备CMP浆液组合物,并进行化学机械抛光。所制备的CMP浆液组合物包括1.0%重量比的氧化铈、表2所示量的聚丙烯酸(重均分子量为200,000)和聚乙二醇、其余为去离子水。用TMAH控制该浆液的pH值。然后,进行抛光并以实施例1中所述相同的方式测定该浆液组合物的品质。用由SKW公司制造“STI 3模式晶片(STI3 patterned wafer)”进行该抛光测试。
[表2]
如表2所示,含有聚羧酸或其盐和醇化合物的浆液组合物显示优良的场氧化层相对氮化硅层的抛光选择性以及相对很少的凹陷。
如上所述,相比氮化硅层,本发明所述的CMP浆液组合物具有非常高的场氧化层抛光速率,因而具有增强的抛光选择性,并且能够增强抛光均匀性。因此,本发明所述的CMP浆液组合物能够减少凹陷和侵蚀,并产生具有所需品质的半导体装置。虽然参考优选实施方案对本发明进行了详细描述,但是本领域技术人员应理解在不偏离所附权利要求确定的本发明的精神和范围的条件下,可对其作出各种修改和替换。
Claims (5)
1.化学机械抛光浆液组合物,包括:二氧化铈研磨剂;重均分子量为50,000-500,000的聚羧酸或其盐;醇化合物和水。
2.如权利要求1所述的化学机械抛光浆液组合物,其中相对于总的浆液组合物,所述二氧化铈研磨剂的量为0.1-20%重量比,所述聚羧酸或其盐的量为0.01-20%重量比,所述醇化合物的量为0.001-10%重量比。
3.如权利要求1所述的化学机械抛光浆液组合物,其中所述醇化合物选自甲醇、乙醇、丙醇、丁醇、戊醇、聚乙二醇、木糖醇、三甘醇、聚丙二醇、2-氨基-1-丁醇、新戊二醇及其混合物。
4.如权利要求1所述的化学机械抛光浆液组合物,其中所述浆液组合物pH值为5-10。
5.如权利要求1所述的化学机械抛光浆液组合物,其中所述浆液组合物还包括用于调节所述浆液组合物的pH值的化合物,所述化合物选自磷酸、盐酸、硫酸、硝酸、氨水、氢氧化钾、羟化四甲铵及其混合物。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050045512A KR101126124B1 (ko) | 2005-05-30 | 2005-05-30 | 연마 평탄도를 향상시킨 산화 세륨 슬러리 조성물 |
KR10-2005-0045512 | 2005-05-30 | ||
KR1020050045512 | 2005-05-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1872900A true CN1872900A (zh) | 2006-12-06 |
CN1872900B CN1872900B (zh) | 2012-03-21 |
Family
ID=37483514
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006100834808A Expired - Fee Related CN1872900B (zh) | 2005-05-30 | 2006-05-30 | 具有增强的抛光均匀性的二氧化铈浆液组合物 |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR101126124B1 (zh) |
CN (1) | CN1872900B (zh) |
TW (1) | TW200641080A (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103998547A (zh) * | 2011-12-21 | 2014-08-20 | 巴斯夫欧洲公司 | 包含聚乙烯基膦酸及其衍生物的化学机械抛光组合物 |
CN104726028A (zh) * | 2013-12-18 | 2015-06-24 | 安集微电子(上海)有限公司 | 一种化学机械抛光液及其使用方法 |
CN109504155A (zh) * | 2017-09-15 | 2019-03-22 | 蓝思科技(长沙)有限公司 | 用于去除玻璃边油的抛光液及去除玻璃边油的工艺 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101256551B1 (ko) * | 2008-03-06 | 2013-04-19 | 주식회사 엘지화학 | Cmp 슬러리 및 이를 이용한 연마 방법 |
US9633863B2 (en) * | 2012-07-11 | 2017-04-25 | Cabot Microelectronics Corporation | Compositions and methods for selective polishing of silicon nitride materials |
KR102509260B1 (ko) | 2015-11-20 | 2023-03-14 | 삼성디스플레이 주식회사 | 실리콘 연마 슬러리, 다결정 실리콘의 연마방법 및 박막 트랜지스터 기판의 제조방법 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000192015A (ja) * | 1998-12-25 | 2000-07-11 | Hitachi Chem Co Ltd | Cmp研磨剤及び基板の研磨方法 |
JP2002231666A (ja) * | 2001-01-31 | 2002-08-16 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
US20040077295A1 (en) | 2002-08-05 | 2004-04-22 | Hellring Stuart D. | Process for reducing dishing and erosion during chemical mechanical planarization |
US9293344B2 (en) * | 2004-07-23 | 2016-03-22 | Hitachi Chemical Company, Ltd. | Cmp polishing slurry and method of polishing substrate |
-
2005
- 2005-05-30 KR KR1020050045512A patent/KR101126124B1/ko not_active IP Right Cessation
-
2006
- 2006-05-26 TW TW095118837A patent/TW200641080A/zh unknown
- 2006-05-30 CN CN2006100834808A patent/CN1872900B/zh not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103998547A (zh) * | 2011-12-21 | 2014-08-20 | 巴斯夫欧洲公司 | 包含聚乙烯基膦酸及其衍生物的化学机械抛光组合物 |
CN104726028A (zh) * | 2013-12-18 | 2015-06-24 | 安集微电子(上海)有限公司 | 一种化学机械抛光液及其使用方法 |
CN109504155A (zh) * | 2017-09-15 | 2019-03-22 | 蓝思科技(长沙)有限公司 | 用于去除玻璃边油的抛光液及去除玻璃边油的工艺 |
CN109504155B (zh) * | 2017-09-15 | 2021-09-14 | 蓝思科技(长沙)有限公司 | 用于去除玻璃边油的抛光液及去除玻璃边油的工艺 |
Also Published As
Publication number | Publication date |
---|---|
KR101126124B1 (ko) | 2012-03-30 |
TW200641080A (en) | 2006-12-01 |
CN1872900B (zh) | 2012-03-21 |
KR20060123878A (ko) | 2006-12-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6030703B2 (ja) | 誘電性CMPスラリーにおけるCsOHの使用 | |
US6540935B2 (en) | Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same | |
CN101767295B (zh) | 化学机械抛光组合物及其相关方法 | |
US7754611B2 (en) | Chemical mechanical polishing process | |
JP2003514061A5 (zh) | ||
TWI500750B (zh) | 包含多晶矽、氧化矽及氮化矽之基板的研磨方法 | |
KR101603361B1 (ko) | 화학적-기계적 연마 조성물 및 그 제조 및 사용 방법 | |
KR102303865B1 (ko) | 연마 조성물 및 이를 사용하는 방법 | |
EP2035523A1 (en) | Compositions and methods for polishing silicon nitride materials | |
CN108250977B (zh) | 一种用于阻挡层平坦化的化学机械抛光液 | |
JP5861906B2 (ja) | 酸化ケイ素除去を増大させるように適合した研磨組成物で基体を化学機械研磨する方法 | |
TWI758069B (zh) | 研磨組成物及其使用方法 | |
CN1872900B (zh) | 具有增强的抛光均匀性的二氧化铈浆液组合物 | |
KR101070410B1 (ko) | 연마용 조성물 및 이를 이용하는 연마방법 | |
US20040214444A1 (en) | Chemical mechanical polishing slurry and process for ruthenium films | |
CN1815696A (zh) | 化学机械研磨方法 | |
WO2018120808A1 (zh) | 一种用于阻挡层的化学机械抛光液 | |
JP2004214667A (ja) | ナイトライド用cmpスラリー及びこれを利用したcmp方法 | |
US20080314872A1 (en) | Chemical-Mechanical Polishing Compositions Containing Aspartame And Methods Of Making And Using The Same | |
CN111378367A (zh) | 一种化学机械抛光液 | |
US20040147123A1 (en) | Chemical mechanical polishing slurry for ruthenium titanium nitride and polishing process using the same | |
US11274230B1 (en) | Polishing composition and method of polishing a substrate having enhanced defect inhibition | |
CN111599677B (zh) | 半导体结构及其形成方法 | |
KR20060014659A (ko) | 선택비를 향상시킨 화학 기계적 연마 슬러리 조성물 | |
US20070264829A1 (en) | Slurry and method for chemical mechanical polishing |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120321 Termination date: 20130530 |