CN1855616A - Fabricating method of gunn diode and gunn oscillator - Google Patents

Abstract

The invention discloses a semiconductor base, preparing method and assembling structure and NRD waveguide Gunn oscillator, which comprises the following parts: Gunn diode with first semiconductor layer, activating layer and second semiconductor layer, first and second electrodes on the second semiconductor layer to exert voltage for activated layer, flute as dividing region of Gunn diode.

Description

Fabricating method of gunn diode and Gunn oscillator

The application is that submission on April 28th, 1999, application number are dividing an application of patent application case 200410001622.2, that be entitled as " fabricating method of gunn diode and Gunn oscillator ".

The present invention relates to be used for the Gunn diode of microwave, millimeter wave vibration usefulness, relate in particular to and to improve thermal diffusivity, improve qualification rate and planar loop is installed easy Gunn diode, its manufacture method and its mounting structure.

In addition, the present invention relates to NRD waveguide (Non Radiative Dielectic Wave Guide: the non-radiation type dielectric waveguide) combination of loop and Gunn diode and the NRD waveguide Gunn that constitutes.

The Gunn diode of microwave and millimeter wave vibration usefulness is generally formed by GaAs (GaAs) and indium phosphide (InP) and so on compound semiconductor.In these compound semiconductors, for the mobility of electronics under weak electric field up to thousands of cm ²/ V á sec's, in case apply highfield, the electron transfer that is accelerated is to the big wave band of effective mass, and its mobility reduces, and produces negative differential mobility in the body, and the negative differential conductivity of current-voltage characteristic appears in the result, produces the instability on the thermodynamics.Therefore produce the farmland, and move from the cathode side anode side.The result that it repeats obtains oscillating current (starting of oscillation).

Determine the frequency of oscillation of Gunn diode by the distance of this farmland migration.The Gunn diode that millimeter wave is used must make this migration distance extremely weak point be 1-2 μ m.And, the farmland must be moved the long-pending certain value (for example 1 * 10 that is set at of the impurity concentration in space (active layer) and thickness in order to obtain sufficient oscillation efficiency ¹²/ cm ²), again because frequency of oscillation by the decision of active layer thickness, is single valued relation, so at the such high frequency band of millimeter wave, the impurity concentration of active layer is quite high.In addition, the current density under the operate condition because current density increases, causes the temperature of active layer to rise at millimeter wave band by the long-pending decision of the impurity concentration and the saturated electrons speed of active layer, and oscillation efficiency descends.

In order to solve aforesaid problem, the tradition millimeter wave with Gunn diode by taking meas structure, the element size that will comprise active layer forms the minimum like this degree of several 10 μ m diameter, simultaneously it is assembled in the bullet shape shell, this bullet shape shell has the radiating part of good diamond of radiating efficiency that the oscillation efficiency that determines most important performance index is had a significant impact etc.

Figure 29 illustrates the profile of the GaAs Gunn diode element 100 of conventional table surface structure.

Active layer 103 that on the semiconductor substrate 101 that constitutes by high concentration n p type gallium arensidep, is stacking gradually the 1st contact layer 102 that utilizes the MBE method to constitute, constituting by low concentration n p type gallium arensidep and the 2nd contact layer 104 that constitutes by high concentration n p type gallium arensidep by high concentration n p type gallium arensidep, in order to reduce the area in electron transfer space, take meas structure.

Then, make the thinning back side of semiconductor substrate 101, form cathode electrode 105, and after the surface of the 2nd contact layer 104 forms anode electrode 106, carry out the element cutting, finish the Gunn diode element at the back side of this semiconductor substrate 101.

The Gunn diode element 100 of Xing Chenging is assembled in as shown in figure 30 the bullet shape shell 110 like this.This bullet shape shell 110 has cooling base electrode 111 and becomes the cylinder 112 that is made of glass or pottery of the shell that surrounds Gunn diode element 100, and this cylinder 112 is brazing on the cooling base electrode 111.The soldering tip Electrostatic Absorption of the sapphire material that Gunn diode element 100 usefulness are not shown etc., be bonded on the cooling base electrode 111.

Have again, by thermo-compressed etc. Gunn diode 100 is connected with the metal level of being located at cylinder 112 tops with gold ribbon 113.Carry out after the connection of gold ribbon 113, the metal dish 114 of shape is covered in welding on cylinder 112, to the just end of assembling of bullet shape shell 110.

Figure 31 shows the Gunn diode that is assembled in bullet shape shell 110 to one of the mounting structure of microstrip line 120 example.An electrode among two electrodes 111,114 of bullet shape shell 110 is inserted in the hole of the dull and stereotyped insulated substrate 121 that is formed at formations such as aluminium oxide, and be electrically connected with the grounding electrode 122 that is formed at these flat panel substrate 121 back sides, another electrode is connected with the signal line 124 that forms microstrip line on flat panel substrate 121 by gold ribbon 123.

The NRD waveguide loop is because to compare transmission loss little with microstrip line, and compares the easy to manufacture of transmission line with waveguide, so receive publicity as the microwave especially transmission line of the above millimere-wave band of 30GHz.

The parallel flat that this NRD waveguide loop is two conducting metals clips the structure of the electromagnetic medium strip line of transmission, because the interval between this parallel flat opposite face is set at below 1/2 of free space wavelength of institute's frequency of utilization, so, place electromagnetic wave conductively-closed outside this medium strip line, its radiation is suppressed, therefore, can be along the medium strip line with lower loss transmission electromagnetic wave.

Develop the 35GHz frequency band that constitutes by this NRD waveguide loop and Gunn diode and the oscillator of 60GHz frequency band, and obtained the vibration output that can be equal to waveguide.

Figure 32 (a) shows the structure of existing NRD waveguide Gunn.In the space between its parallel flat 201 and 202, be provided with the mount pad 320 that medium strip line 203 and Gunn diode 310 are housed, exported to medium strip line 203 through resonator 330 by the Gunn diode 310 high frequency output that of vibrating.Figure 32 (b) shows the representative example of resonator 330, and it has the Copper Foil part 331 that the Copper Foil of polytetrafluoroethylene copper-clad laminated substrate is formed figure through etching.By width or the length of adjusting this Copper Foil part 331, can adjust frequency of oscillation.

Shown in Figure 33 is the pie graph of mount pad 320.Gunn diode 310 is placed among the cylindrical portion 321, by applying bias voltage with these cylindrical portion 321 adjacent biasing chokes parts 340 that are connected.This biasing chokes part 340 is that polytetrafluoroethylene copper-clad lamination is formed figure through etching, and eliminates plywood part to stay the Copper Foil part that the lid 341 used with the connecting portion of cylindrical portion 321 is connected.The cathode electrode of Gunn diode 3 10 is connected with the cooling base 322 of mount pad 320.Be insulated isolation by cylinder-shaped ceramic 342 between this cooling base 322 and the lid 341, this lid 341 is by being connected with the anode electrode of Gunn diode 310 with 343.

Tradition Gunn diode element 100 is because become above-mentioned meas structure, so generally make with photoresist as etching mask, method with chemical wet lithography forms, but use this lithographic method, depth direction but also laterally also carry out etching simultaneously not only, there is the difficulty that the migration space (active layer) that is difficult to the control electronics is such makes, has the variant such problem of element characteristic of Gunn diode element.

In addition, during assembling bullet shape shell 110, when bonding to Gunn diode element 100 on the cooling base electrode 111, above-mentioned soldering tip can cover sight line, is difficult to directly use visual confirmation cooling base electrode 111, has the problem of the non-constant of packaging efficiency.

Also have, when the bullet shape shell 110 that Gunn diode element 100 is housed being installed on the microstrip line 120 that on flat panel substrate 121, forms,, have the problem that produces stray inductance and make the discrepant installation of characteristic aspect because connect by gold ribbon 123.

Other problem is, above-mentioned NRD waveguide Gunn is because use special mount pad 320, so the difficulty of manufacturing, the chokes part 340 of especially setovering must eliminate substrate and make and cover 341 and expose, so its operating efficiency extreme difference.

In addition, because the anode electrode of Gunn diode 310 and lid 341 by being with 343 to be connected, so also have the generation stray inductance and make the discrepant problem of characteristic.

The objective of the invention is to, Gunn diode, its manufacture method and the mounting structure thereof of the problem of having eliminated above-mentioned manufacture view, assembling aspect and the existence of installation aspect is provided.

Other purpose of the present invention is to provide the NRD that has solved the problems referred to above waveguide Gunn.

Therefore, the Gunn diode of the present invention's the 1st invention constitutes, a kind of Gunn diode that on semiconductor substrate, stacks gradually the 1st semiconductor layer, active layer and the 2nd semiconductor layer, it has: be configured in and on described the 2nd semiconductor layer described active layer applied the 1st, the 2nd electrode that voltage is used, and, the recess that described the 2nd semiconductor layer of cutting with described active layer, described the 1st electrode being connected towards described the 2nd semiconductor layer around the 1st electrode and described active layer come out as the area dividing of Gunn diode function.

The Gunn diode of the present invention's the 2nd invention is on the basis of the 1st invention, and the conductive film that makes short circuit between described the 2nd electrode and described the 1st semiconductor layer is set in described recess.

Described the 1st, the 2nd electrode of the Gunn diode of the present invention the 3rd invention by the basal electrode layer and with this basal electrode layer continuously and the upper surface conductive bump portion that forms roughly the same height constitute.

The Gunn diode of the present invention the 4th invention is on the basis of 1-3 invention, and the described conductive bump portion of described the 1st electrode is formed on the substantial middle part, forms the described conductive bump portion of described the 2nd electrode in its both sides.

The Gunn diode of the present invention the 5th invention is on the basis of 1-4 invention, and the area of described the 1st electrode is set at below 1/10 of described the 2nd electrode area.

The Gunn diode of the present invention's the 6th invention is on the basis of 1-5 invention, the described recess that is formed with 2 the above the 1st electrodes and cuts on every side from described the 1st electrode.

The Gunn diode of the present invention's the 7th invention is that described semiconductor substrate, described the 1st semiconductor layer, described active layer and described the 2nd semiconductor layer are made of the compound semiconductor of GaAs, indium phosphide etc. on the basis of 1-6 invention.

The Gunn diode of the present invention the 8th invention is on the basis of 1-7 invention, will be replaced as single semiconductor layer or conductor layer with continuous described the 2nd semiconductor layer and the described active layer of described the 2nd electrode.

The Gunn diode of the present invention's the 9th invention is on the basis of 1-8 invention, at the back side of described semiconductor substrate the 3rd electrode is set, and the 3rd electrode and described the 1st electrode are used for described active layer is applied voltage, described the 2nd electrode is substituted make pad.

The fabricating method of gunn diode of the present invention the 10th invention comprises: stack gradually formation as the 1st semiconductor layer of the 1st contact layer, active layer and as the 1st operation of the 2nd semiconductor layer of the 2nd contact layer on semiconductor substrate; On described the 2nd contact layer, form the 2nd operation of the 1st and the 2nd electrode of definite shape; The the described the 1st and the 2nd electrode is carried out dry etching as mask, remove the 3rd operation of described the 2nd semiconductor layer and active layer.

The fabricating method of gunn diode of the present invention's the 11st invention is on the 10th invention basis, described the 2nd operation also is included in after the basal electrode layer that the described the 1st and the 2nd electrode that forms definite shape uses, and forms the operation of the conductive bump portion of roughly the same height again on this basal electrode layer.

The fabricating method of gunn diode of the present invention's the 12nd invention is that described semiconductor substrate, described the 1st semiconductor layer, described active layer and described the 2nd semiconductor layer are made of the compound semiconductor of GaAs, indium phosphide etc. on the basis of the 10th or the 11st invention.

The Gunn diode mounting structure of the present invention's the 13rd invention is this surface that forms the microstrip line of grounding electrode at the flat panel substrate surface formation signal electrode of half insulation overleaf, the surface earthing electrode that formation connects through V-shape hole from the grounding electrode at the described back side, and on described signal electrode and described surface earthing electrode the 1st, the 2nd electrode of the Gunn diode of connection 1-8 invention respectively.

The Gunn diode mounting structure of the present invention the 14th invention is to be formed with on this signal electrode and this grounding electrode of coplane circuit of signal electrode and a pair of grounding electrode on the flat panel substrate surface of half insulation, respectively the 1st and the 2nd electrode of the Gunn diode of connection 1-8 invention.

The Gunn diode mounting structure of the present invention's the 15th invention, one end of described signal electrode is an open state from the position length L of the 1st electrode that connecting described Gunn diode, the 1st electrode part that makes this length L is as resonator works, by this length L decision frequency of oscillation.

The Gunn diode mounting structure of the present invention's the 16th invention, on the fin that the insulating properties substrate constitutes, form the 4th, the 5th electrode, the 1st electrode of Gunn diode of described the 9th invention directly is mounted on the 4th electrode of described fin, the 2nd electrode of described Gunn diode directly is mounted on the 5th electrode of described fin.

The Gunn diode mounting structure of the present invention's the 17th invention, be formed with signal electrode on the surface of half insulation flat panel substrate and be formed with overleaf on the microstrip line of grounding electrode of double as cooling base, formation from the surface to the hole of the grounding electrode at the back side, in this hole, the 5th electrode of the 16th fin of inventing is connected with described grounding electrode, uses conductor wire to be connected at the 3rd electrode of the 16th Gunn diode of inventing with the signal electrode of described microstrip line.

The Gunn diode mounting structure of the present invention the 18th invention is on the basis of 13-17 invention, by described signal electrode, described grounding electrode and described Gunn diode or additional agents resonator thereon, constitutes the oscillation circuit with the certain frequency vibration.

The Gunn diode mounting structure of the present invention's the 19th invention is on the basis of the 18th invention, part at least a portion that the electrode as described oscillation circuit in the described signal electrode is worked is the flat panel substrate covering of conductor, and this conductor part of this flat panel substrate is connected with described grounding electrode.

The Gunn diode mounting structure of the present invention's the 20th invention is that the resistivity that makes the flat panel substrate of described microstrip line or coplane circuit is 10 on the basis of 13-19 invention ⁶More than the Ω cm, and thermoelectric conductance is more than the 140W/mK.

The Gunn diode mounting structure of the present invention the 21st invention is on the basis of 13-20 invention, and the flat panel substrate of described microstrip line or coplane circuit is made of at least a in AIN, Si, SiC or the diamond.

The NRD waveguide Gunn of the present invention's the 22nd invention, the parallel flat that its two metallic plates constitute is with the arranged spaced below 1/2 of the free space wavelength of institute's frequency of utilization, the NRD waveguide loop and the Gunn diode that will clip the medium strip line between this parallel flat are combined, form the NRD waveguide Gunn thus, its have be formed with on the surface signal electrode that is connected with signal line and with the insulating properties of the grounding electrode of this signal electrode insulation or the flat panel substrate of half insulation, be formed with that anode electrode is connected with the signal electrode of described flat panel substrate with one of cathode electrode and this two electrode on one side and Gunn diode that another electrode is connected with described grounding electrode, and fin, the top of the described signal line of described flat panel substrate and the described medium strip line electromagnetic coupled at the described flat panel substrate of one of the described relatively parallel flat supporting back side.

The present invention the 23rd invention is on the basis of the 22nd invention, and it is parallel that the described relatively parallel flat of described flat panel substrate of described Gunn diode in connection, and the described relatively medium strip line of described signal line electromagnetic coupled vertically.

The present invention's the 24th invention is on the 22nd invention basis, it is parallel that the described relatively parallel flat of described flat panel substrate of described Gunn diode in connection, and the electromagnetic wave direct of travel of described signal line is identical with the electromagnetic wave direct of travel of described medium strip line, the bottom electromagnetic coupled of described signal line and described medium strip line.

The present invention's the 25th invention is on the basis of the 23rd or the 24th invention, and the posture of connection the described relatively parallel flat of described flat panel substrate of described Gunn diode makes into vertically from parallel.

The present invention's the 26th invention is that described signal line is the circuit that suspends, microstrip line or coplane circuit on the basis of 22-25 invention.

The present invention's the 27th invention is that described flat panel substrate has earthy electrode overleaf on the basis of 22-26 invention, and this earthy electrode is connected by V-shape hole with described grounding electrode.

The NRD waveguide Gunn of the present invention's the 28th invention, the parallel flat that its two metallic plates constitute is with the arranged spaced below 1/2 of the free space wavelength of institute's frequency of utilization, the NRD waveguide loop and the Gunn diode that will clip the medium strip line between this parallel flat are combined, it has the insulating properties that is formed with the grounding electrode that two signal electrodes connecting with the signal line two ends and relative each signal electrode insulate on the surface or the flat panel substrate of half insulation, be formed with that anode electrode is connected with the signal electrode of described flat panel substrate with one of cathode electrode and this two electrode on one side and two Gunn diodes that another electrode is connected with described grounding electrode, and described relatively parallel flat supports the fin at the described flat panel substrate back side, and makes the substantial middle and the described medium strip line electromagnetic coupled of the described signal line of described flat panel substrate.

The present invention the 29th invention is on the 28th invention basis, and the length of described signal line is roughly 1/2 or its integral multiple of this signal line wavelength.

The present invention the 30th invention is on the basis of the 28th or the 29th invention, and it is vertical with described parallel flat that the flat panel substrate of described Gunn diode in connection, and make the substantial middle of described signal line and the terminal part electromagnetic coupled of described medium strip line.

The present invention the 31st invention is on the 30th invention basis, and it is parallel from vertically making into to make connection the posture of the described relatively parallel flat of described flat panel substrate of described Gunn diode.

The present invention's the 32nd invention is that described signal line is suspension type circuit or microstrip line or coplane circuit on the basis of 28-31 invention.

The present invention's the 33rd invention is that described flat panel substrate has earthy electrode overleaf on the basis of 28-32 invention, and this earthy electrode is connected by V-shape hole with described grounding electrode.

Figure 1 shows that the Gunn diode element of the present invention's the 1st example, wherein (a) is vertical view, (b) is cutaway view.

Fig. 2 (a) is the key diagram of above-mentioned Gunn diode manufacturing method to (d).

Fig. 3 (a) and (b) are depicted as the cutaway view of the variation of above-mentioned Gunn diode element.

Fig. 4 is for being installed in above-mentioned Gunn diode element the stereogram of the 2nd example on the microstrip line.

Fig. 5 is the stereogram of variation of the mounting structure of Fig. 4.

Fig. 6 (a) and (b) are installed the exterior view of form for the Gunn diode element.

Fig. 7 when the Gunn diode element being installed as oscillator by the frequency of oscillation of the length L decision of electrode 32B and the performance plot of vibration output.

Fig. 8 for when with the Gunn diode element with Fig. 6 (a) towards when installation, the spectrogram of frequency of oscillation.

Fig. 9 for when with the Gunn diode element with Fig. 6 (b) towards when installation, the spectrogram of frequency of oscillation.

Figure 10 appends the stereogram that flat panel substrate has been installed on the mounting structure of Fig. 5.

Figure 11 is the stereogram that above-mentioned Gunn diode element is installed in the 3rd example on the coplane circuit.

Figure 12 is the stereogram of the variation of Figure 11 mounting structure.

Figure 13 is for appending the stereogram that flat panel substrate has been installed on the mounting structure of Figure 12.

Figure 14 shows that with the posture that faces down the Gunn diode element is installed in the figure of the 4th example on the fin, wherein (a) is the vertical view of fin, (b) is the cutaway view of installment state.

Figure 15 shows that the cutaway view of state on the microstrip line that the Gunn diode element that is installed on the fin shown in Figure 14 is installed in again.

Figure 16 shows that the Gunn diode element of the present invention's the 5th example, wherein (a) is vertical view, (b) is cutaway view.

Figure 17 shows that the Gunn diode element has the power output under the different number situations of meas structure part of specific total area and the characteristic of conversion efficiency.

Another adds up to the power output under the different number situations of meas structure part of area and the characteristic of conversion efficiency to Figure 18 shows that the Gunn diode element.

Figure 19 is the key diagram of the employed Gunn diode installment state of the characteristic measurement of Figure 17, Figure 18.

Figure 20 (a) is the stereogram of the NRD waveguide Gunn of the invention process form, (b) is end view.

Figure 21 (a) is the vertical view of circuit base plate, (b) is back view.

Figure 22 (a) is the vertical view of Gunn diode, (b) is cutaway view, (c) is the cutaway view of the Gunn diode of variation.

Figure 23 is the stereogram of the NRD waveguide Gunn of another example of the present invention.

Figure 24 is the stereogram of the NRD waveguide Gunn of the another example of the present invention.

Figure 25 is the stereogram of the NRD waveguide Gunn of the present invention's one example.

Figure 26 (a) is the vertical view of circuit base plate, (b) is back view.

Figure 27 (a) is the vertical view of Gunn diode, (b) is cutaway view, (c) is the cutaway view of the Gunn diode of variation.

Figure 28 is the stereogram of the NRD waveguide Gunn of another example of the present invention.

Figure 29 is the cutaway view of the Gunn diode of existing meas structure.

Figure 30 is pack into the cutaway view of bullet shape shell of the Gunn diode that will have meas structure now.

Figure 31 is for being installed on bullet shape shell the key diagram of microstrip line.

Figure 32 (a) (b) is the stereogram of resonator for the stereogram of existing NRD waveguide Gunn.

Figure 33 (a) is the stereogram of the mount pad of NRD waveguide Gunn shown in Figure 32, (b) is the cutaway view along the B-B line of (a).

Example 1 is described earlier.

Figure 1 shows that the structure chart of the Gunn diode element 10 that is made of GaAs of the present invention's the 1st example, wherein (a) is vertical view, (b) is cutaway view.Fig. 2 is a manufacturing procedure picture.

At first press the manufacturing process shown in Fig. 2 description of contents.Prepare semiconductor substrate, this semiconductor substrate is to be 1-2 * 10 by impurity concentration ¹⁸Atom/cm ³The semiconductor substrate 11 that constitutes of n p type gallium arensidep on, by the MBE method, stacking gradually by impurity concentration is 2 * 10 ¹⁸Atom/cm ³And thickness is the 1st contact layer 12 that constitutes of the n p type gallium arensidep of 1.5 μ m, be 1.2 * 10 by impurity concentration ¹⁶Atom/cm ³And thickness is the active layer 13 that constitutes of the n p type gallium arensidep of 1.6 μ m, be 1 * 10 by impurity concentration ¹⁸Atom/cm ³And thickness is the 2nd contact layer 14 that the n p type gallium arensidep of 0.3 μ m constitutes.

On the 2nd contact layer 14, be formed on the predetermined figure that forms the regional opening of cathode electrode and anode electrode with photoresist, the metal film (basal electrode layer) that constitutes by AuGe, Ni, Au etc. of evaporation and the 2nd contact layer 14 ohmic contact.Remove after the photoresist, carry out heat treated (annealing), on the 2nd contact layer 14, separate forming cathode electrode 15 and anode electrode 16 (Fig. 2 (a)).As shown in Figure 1, its edge of the flat shape of cathode electrode 15 is a rectangle, and the flat shape of anode electrode 16 is circular, but also can select ellipse, square etc. roughly.

Then, photoresist 17 is formed the figure of a part of opening that makes cathode electrode 15 and anode electrode 16 surfaces, in opening, separate out the conductive bump portion (electrode) 18,19 (Fig. 2 (b)) that formation is made of Au etc. by galvanoplastic or electroless plating method.

Then, by removing photoresist 17, the 2nd contact layer 14 that is formed with cathode electrode 15 and cathode electrode 16 is exposed, then cathode electrode 15 and anode electrode 16 are used as mask, the dry etching of the reactive ion etching (RIE) by using chlorine etc. etc., remove the 2nd contact layer 14 and active layer 13, form recess 20 roughly mesa shaped or vertical configuration (Fig. 2 (c)) at the periphery of above-mentioned anode electrode 16.Like this, by top cathode electrode 15 and anode electrode 16 are carried out the etching of the vertical direction of cooperation certainly as mask, can correctly form recess 20 as target.

At this, the area of the active layer 13 that the anode electrode of being divided by recess 20 16 is connected is set at the area of the compulsory exercise electric current that can obtain Gunn diode (lateral cross section is long-pending).That is, be set at and can be used as the area that Gunn diode works.In addition, the area that makes the active layer 13 that is connecting cathode electrode 15 is more than 10 times of active layer 13 areas that connecting anode electrode 16, the resistance that makes the semiconductor multilayer portion of cathode electrode 15 belows is below 1/10 of semiconductor multilayer portion resistance of anode electrode 16 belows, thereby this part can not be worked as Gunn diode, in fact work as low resistance, in fact cathode electrode 15 is connected with the 1st contact layer 12.The area of above active layer 13 only is that efficiency of movement descends than less than 10 o'clock, to no effect, must be more than 10, is advisable more than 100.

In addition, the penetraction depth of recess 20 is made as the degree of depth of removing whole active layers 13, but also can leave certain active layer 13 parts, perhaps also can enter the 1st contact layer 12 to a certain degree.

In addition, the active layer area below this makes cathode electrode is bigger than anode electrode, but also can be opposite, and the active layer area that makes the anode electrode below is bigger than cathode electrode.That is, anode electrode and cathode electrode can replace mutually.In addition, because make the impurity concentration of active layer 13 not have concentration gradient, so even anode electrode 16 is opposite also harmless with cathode electrode 15, but when concentration gradient, then to hang down lateral electrode be cathode electrode to concentration, high lateral electrode is an anode electrode at this.

Then by the manufacturing process of general Gunn diode, the back side of grinding semiconductor substrate 11 makes its attenuation, so that the thickness of whole Gunn diode is about 60 μ m.Then, as required the back side of semiconductor substrate 11 evaporation and semiconductor substrate 11 ohmic contact, by the metal film 21 that AuGe, Ni, Au, Ti, Pt, Au etc. constitute, carry out heat treated (Fig. 2 (d)).

The metal film 21 that is formed at semiconductor substrate 11 back sides not necessarily needs, but when the mounting structure of taking to narrate later (Figure 15), can make it replace cathode electrode 15 to play cathode electrode.At this moment, cathode electrode 15 just no longer is subjected to above-mentioned restriction below 1/10 with the area ratio of anode electrode 16.

As mentioned above, the Gunn diode 10 of this example is by partly forming recess 20 around anode electrode 16 at semiconductor multilayer, just become with playing the part and the structure that partly is separated as the conductive formation that this Gunn diode the 1st contact layer 12 is partly applied the circuit functions of voltage from the outside of Gunn diode function, so cathode electrode 15 and anode electrode 16 such two electrodes can be set at the upper surface of the 2nd contact layer 14.That is, can on one side, concentrate cathode electrode 15 and anode electrode 16.Therefore as hereinafter described, aspect installation and heat radiation aspect etc. can play a big part.

In addition, because the electrode of delimiting the etching in decision operating current district (playing the Gunn diode funtion part) and be by will being formed at this top, district carries out as the dry etching that cooperates certainly of mask, so, compare with traditional chemical wet etching, manufacturing variation is little, and can improve stock utilization.

(a) of Fig. 3 shows the variation 10 ' of Gunn diode 10 shown in Fig. 1 (b), makes and be coated with conductive film 22 in recess 20, makes the structure of the 1st contact layer 12 and cathode electrode 15 short circuits.Like this, pass to the 1st contact layer 12 when the almost harmless lost territory of the voltage that when very big, can prevent from the influence of this dead resistance from the dead resistance between cathode electrode 15 to the 1st contact layers 12, can make to put on cathode electrode 15.

Again, further improve this Gunn diode 10 ', all right Gunn diode 10 shown in Fig. 3 (b) " like that; direct formation cathode electrode 15 on the 1st contact layer 12; form plush copper 18 more in the above; other is identical with structure shown in Fig. 1 (b), and makes the upper surface of plush copper 18,19 be in sustained height side by side.At Gunn diode 10 ', 10 " in, cathode electrode 15 does not have above-mentioned restriction below 1/10 again with the area ratio of anode electrode 16.

Example 2 then is described.

Fig. 4 shows one of the structure example that Gunn diode 10 is installed on the dull and stereotyped loop substrate that forms microstrip line 30 and constitutes oscillator.In AlN (aluminium nitride), Si (silicon), SiC (carborundum) and diamond and so on resistivity 10 ⁶More than the Ω á cm, on the thermoelectric conductance 140W/mK flat panel substrate 31 above, well half insulation, formation signal electrode 32, and form grounding electrode 33 overleaf.34 for being filled with the V-shape hole of tungsten, with the grounding electrode 33 at the back side be formed at surperficial surface earthing electrode 35 and be connected.

The plush copper 19 of Gunn diode element 10 its anode electrodes is connected with signal electrode 32, and the plush copper 18 of its cathode electrode is connected with grounding electrode 34.32A is the bias voltage portion electrode to Gunn diode element 10 supply line voltages, and 32B is the electrode that constitutes the resonator of the microstrip line that comprises Gunn diode element 10, and 36 for cutting off the capacitance part of direct current, and 32C is the electrode of the signal efferent of microstrip line.

In this mounting structure, because make Gunn diode element 10 be in the posture that faces down, plush copper 18,19 directly is connected with electrode 35,32, do not use gold ribbon, so, can be made into the little oscillator of property difference with regard to no longer producing because of connecting the stray inductance that causes with gold ribbon.

In addition, because the heat that Gunn diode element 10 produces diffuses on the substrate 31 that also can play the fin effect by plush copper 18,19, so the radiating effect height.Have, because under the installment state of such Gunn diode element 10, the plush copper 18 of cathode electrode is positioned at the both sides of the plush copper 19 of anode electrode again, so can prevent that over load from putting on anode electrode.

Figure 5 shows that electrode 32C one side that the electrode 32A of bias voltage portion in the oscillator shown in Figure 4 is arranged on the signal efferent.Frequency of oscillation and vibration output by adjusting the length L of the open electrode 32B in top, can be set in the plane of the flat panel substrate 31 of this structure shown in Figure 5 shown in Fig. 6 (a).Figure 7 shows that its performance plot, this moment, the characteristic impedance of electrode 32C was 50 Ω, and the characteristic impedance of electrode 32B is 35 Ω.

Figure 8 shows that the oscillation frequency spectrogram, when the peak value frequency of oscillation was 58.68GHz, phase noise located to be-85dBc/Hz at offset carrier 100KHz (departing from), and its value is not worse than the Gunn diode resonator that uses the waveguide resonant cavity.Again, in Fig. 8 be-46.7dB, but be-85dBc/Hz according to following formula.

-47.6dB+2.5dB-10log(1Hz/(10Hz×1.2))＝-85dB

And for example shown in Fig. 6 (b), when the plush copper 19 of the anode electrode of Gunn diode element 10 central authorities and the surface earthing electrode 35 ' that is connected with the grounding electrode at the back side by V-shape hole connect, one of plush copper 18 of both sides cathode electrode is connected with the electrode 32B ' of resonator, another plush copper 18 is connected with electrode 32C with output, when so constituting resonator, as shown in Figure 9, when the peak value frequency of oscillation is 61.63GHz, phase noise at offset carrier 100KHz place is-75dBc/Hz (is-36.7dB in Fig. 9, be to obtain) according to the formula identical with following formula, compared 10dB relatively poor, low with the syndeton shown in Fig. 6 (a) as can be known.

This reason can be speculated as, take the syndeton of Fig. 6 (a), the semiconductor substrate 11 of Gunn diode element 10 is by ground connection such as plush copper 18 and surface earthing electrodes 35, this semiconductor substrate 11 plays barricade, suppressed the decline of the Q value that the oscillator radiation loss causes, so phase noise improves.

Figure 10 is in oscillator shown in Figure 5, form another surface earthing electrode 35 ' along the both sides of electrode 32B side by side with surface earthing electrode 35, and it is connected with the grounding electrode 33 at the back side by V-shape hole (not shown), conductive plate substrate 80 is set again covers the electrode 32B that constitutes oscillators.This flat panel substrate 80 is provided with the plush copper 81 that is connected usefulness with surface earthing electrode 35 ' in both sides.

In this structure shown in Figure 10, because conductive plate substrate 80 by plush copper 81 and surface earthing electrode 35 ' ground connection, so can further suppress the emission loss of oscillator, can be made the resonator with high Q value.Flat panel substrate 80 so long as at least its part be the structure that covers with metal electrode, substrate itself also can be the material of half insulation.In addition, strengthen the substrate size of Gunn diode element 10 if do not use this flat panel substrate 80, and, adopt such structure can obtain high Q value equally with the semiconductor substrate 11 coated electrode 32B of Gunn diode element 10.Again, surface earthing electrode 35 ' also can prolong surface earthing electrode 35 and form.

Example 3 now is described.

Figure 11 shows that Gunn diode element 10 is installed on one of structure example on the loop substrate that constitutes coplane circuit 40.Half insulation flat panel substrate that identical materials with aforesaid substrate 31 constitute that 41 serve as reasons is formed with signal electrode 42 that constitutes signal line and a pair of grounding electrode 43 that clips this signal electrode at upper surface.

At this, the plush copper 19 of the anode electrode of Gunn diode element 10 directly is connected with the signal electrode 42 of central authorities, and the plush copper 18 of cathode electrode directly is connected with the grounding electrode 43 of both sides.Therefore, the voltage that puts between signal electrode 42 and the grounding electrode 43 is added between the anode electrode and cathode electrode of Gunn diode element 10, can cause vibration.This mounting structure shown in Figure 11 is also the same with Fig. 4, Fig. 5 and mounting structure shown in Figure 10, has the action effect of the stability of characteristics of making, raising radiating effect and protection anode electrode etc.

In Figure 12, be formed with continuously as applying+the electrode 42A of the bias voltage portion that 3.0V uses with signal electrode 42.Around this electrode 42A, form mitigation influences usefulness to power supply chokes part by grounding electrode 43.At this moment, the electrode 42B by adjust constituting oscillator, the length from the part of Gunn diode element 10 to open top, also can set frequency of oscillation and vibration output.42C is the electrode of signal efferent.

Figure 13 be based on the figure of above-mentioned Figure 10 same idea, cover the upper surface of the electrode 42B that constitutes oscillators with conductive plate substrate 80, and the plush copper 81 of these flat panel substrate 80 both sides be connected with grounding electrode 43.Like this, suppress the emission loss in the oscillator, can be made into the resonator of high Q value.

Example 4 now is described.

Figure 14 shows the radiator structure of Gunn diode element 10.50 for using the fin of cvd diamond substrate 51, and be formed with plush copper 18 electrode 52 that is connected and the electrode 53 that is connected with the plush copper 19 of anode electrode with the cathode electrode of Gunn diode element 10.Electrode 52 separates independence with electrode 53, and electrode 53 is connected with grounding electrode 54.

Gunn diode element 10 partly generates heat at the semiconductor multilayer corresponding with the anode electrode that plays the Gunn diode effect, and this heat is delivered to 50 cooling effects of fin by plush copper 18,19 (mainly being plush copper 19).

Figure 15 is the figure that the mounting structure of Gunn diode element 10 shown in Figure 14 is assembled in microstrip line 60.The fin 50 that Gunn diode element 10 is installed is bonding with the grounding electrode 62 of double as radiating seat in the hole 61 that is formed at this microstrip line 60, and with gold ribbon 28 metal film 21 of the signal electrode 64 on the flat panel substrate 63 of aluminium oxide with the replacement cathode electrode at Gunn diode element 10 back sides is connected.

In this structure, the voltage that puts between signal electrode 64 and the grounding electrode 62 is applied in metal film 21 and the anode electrode 19 that replaces cathode electrode through the electrode 53,54 of gold ribbon 28 and fin 50.At this moment, the plush copper 18 of cathode electrode 15 works as the pad of the posture that faces down in the both sides maintenance, does not play a part as the current delivery path.This structure is very simple, compares when using traditional bullet shape shell 110, can reduce cost significantly.

Example 5 below is described.

Figure 16 is the figure that the Gunn diode element 10A structure of another example is shown, and (a) is vertical view, (b) is cutaway view.At this, 4 anode electrodes 19 of independent formation, and corresponding therewith, by 4 recesses 20, form the Gunn diode part of 4 meas structures.The Gunn diode of each meas structure part is because applied voltage jointly, so be state in parallel when moving.

Can reduce the radius of meas structure part this moment, partly compare with having with the Gunn diode of 1 meas structure of the total area equal areas of the Gunn diode of 4 meas structures part, radiating effect significantly improves, so can increase substantially conversion efficiency (ratio of input power and power output) and hunting power.In addition, just die down if the area of meas structure part reduces its intensity, erection stage has the possibility of damage, but because be formed with the plush copper 18 of cathode electrode around it, in fact this part becomes the part of bearing load, so there is not the anxiety of damage.Again, the independent Gunn diode of meas structure partly is not limited to 4.In addition, the sectional area of these a plurality of Gunn diodes needs not to be identical, and its cross sectional shape (shape of anode electrode) also is not limited to circle, can be arbitrary shape.

The performance plot that Figure 17 changes with the Gunn diode part number of meas structure for reflection this conversion efficiency η (%) and hunting power P (mW).From figure as can be known, if do not changing under the situation that anode electrode adds up to area, the Gunn diode part number that makes meas structure becomes 9 from 4, and then oscillation efficiency and hunting power also increase.Figure 18 shows that the Gunn diode that makes meas structure partly has adds up to area with above-mentioned different anode electrode and same performance plot when 4 become 6, and can confirm has identical trend.

In addition, these mensuration are to carry out under the condition that is installed on waveguide as shown in figure 19.70 is waveguide, and 71 for being located at the conductive seat (anode) in this waveguide 70, and 72 is the binding element of bonding insulated substrate 73 on this base 71.There is the Gunn diode element 10A of a plurality of anode electrodes to be bearing on the insulated substrate 73 through electrode 74, the plush copper 19 of anode electrode is connected with base 71 through electrode 75, the V-shape hole 76 that is formed at insulated substrate 73 and binding element 72 with the plush copper 18 of ventricumbent posture with its cathode electrode.In addition, insert the bias terminal 77 that applies bias voltage in the waveguide 70, its lower end is connected with the electrode 21 at the Gunn diode element 10A back side by gold ribbon 78.

More than illustrated to use GaAs, even but other compound semiconductors such as use indium phosphide also can produce identical effect as semi-conductive example.In addition, at the Gunn diode element being installed under the situation that strip line or coplane circuit constitute oscillator of above explanation, additional agents resonator again.

Example 6 below is described.

Figure 20 shows that the NRD waveguide Gunn structure of the present invention's the 6th example.The NRD waveguide loop is the structure that accompanies medium strip line 203 between two metal parallel flats 201,202, with existing identical.In this example, at the upper surface of circuit base plate 210 Gunn diode 220 is housed, by ground connection, heat radiation and adjustment highly the fin 230 of usefulness it is bearing on dull and stereotyped 202.

Circuit base plate 210 is shown in the (a) and (b) of Figure 21, and (for example resistivity is 10 in half insulation or insulating properties ⁶Above about Ω cm, pyroconductivity is AIN, Si above about 140W/mK, SiC, diamond etc.) flat panel substrate 211 upper surfaces, form signal line 212, to this signal line 212 apply the chokes part 213 of Dc bias, with the continuous signal electrode 214 in the end of this signal line 212 and clip a pair of surface earthing electrode 215 of these signal electrode 214 configurations, be formed with grounding electrode 216 overleaf, surface earthing electrode 215 ground electrode 216 that connects is connected by V-shape hole 217.The back side of the signal line 212 of this circuit base plate 210 does not have grounding electrode, forms the suspension type circuit.

Gunn diode 220 is shown in the (a) and (b) of Figure 22, at stacked the 1st contact layer 222 of the upper surface of semiconductor substrate 221, active layer the 223, the 2nd contact layer 224 and metal level 225, and in the circular depressions 226 of central authorities' formation from metal level 225 basic arrival the 1st contact layers 222, thereby this metal level 225 is divided into anode electrode 225A and cathode electrode 225K, and on this anode electrode 225A, form the plush copper 227 of the Au of easy thermo-compressed, on cathode electrode 225K, form the plush copper 228 of the same Au of same height simultaneously.This plush copper 227 and 228 also with anode electrode 225A, cathode electrode 225K equivalence.

Give an example, semiconductor substrate 221 is 1-2 * 10 by impurity concentration ¹⁸Atom/cm ³The n p type gallium arensidep constitute, the 1st contact layer 222 is 2 * 10 by impurity concentration ¹⁸Atom/cm ³, thickness is that the n p type gallium arensidep of 1.5 μ m constitutes, active layer 223 is 1.2 * 10 by impurity concentration ¹⁶Atom/cm ³, thickness is that the n p type gallium arensidep of 1.6 μ m constitutes, the 2nd contact layer 224 is 1 * 10 by impurity concentration ¹⁸Atom/cm ³, thickness is that the n p type gallium arensidep of 0.3 μ m constitutes. also can replace GaAs, use other compound semiconductors such as indium phosphide.

The area of the division part active layer corresponding with anode electrode 225A of this Gunn diode 220 is set at the area (laterally section is long-pending) of certain operating current that can obtain Gunn diode.About the active layer area corresponding with cathode electrode 225K, by being active layer area 10 times or more corresponding with anode electrode 225A, making the resistance of the semiconductor multilayer portion of lower floor of this cathode electrode 225K is below 1/10 of anode electrode 225A, make this part not play the Gunn diode effect, in fact play low-resistance effect.

In addition, this Gunn diode 220 also can be shown in Figure 22 (c), the Gunn diode 220 ' that is replaced as the 2nd contact layer 224 of having removed the cathode electrode 225K lower floor among Figure 22 (b) and active layer 223 backs and constitutes, on the 1st contact layer 222, directly be covered with cathode electrode 225K, and the upper surface that its plush copper 228 is arranged to the plush copper 227 of anode electrode 225A is an equal height.

By thermo-compressed Gunn diode 220 is installed on the flat panel substrate 211 of circuit base plate 210, the plush copper 227 of its anode electrode 225A is connected with signal electrode 214, and a pair of plush copper 228 of cathode electrode 225K is connected with a pair of surface earthing electrode 215.And, grounding electrode 216 parts of circuit base plate 210 are connected with fin 230, be connected ground connection by this fin 230 with dull and stereotyped 202.

The installation of 210 pairs of NRD waveguide loops of circuit base plate is shown in the (a) and (b) of Figure 20, make the flat panel substrate 211 of circuit base plate 210 parallel with parallel flat 201,202, and the bottom of the relative medium strip line 203 in the top that makes signal line 212 is vertically close, installs like this.

If chokes part portion 213 is applied direct voltage, electric current is promptly along the path flow of signal line 212, signal electrode 214, Gunn diode 220, surface earthing electrode 215, V-shape hole 217, back side grounding electrode 216, fin 230 and dull and stereotyped 202, Gunn diode 220 generates electromagnetic waves in (microwave), and arrives the side of medium strip line 203 by signal line 212.Electromagnetic wave is transformed into NRD waveguide loop (LSM mould) at this, propagates in medium strip line 203.

Under this example, because on flat panel substrate 211, be formed with chokes part portion 213, thus can utilize etching to form simultaneously itself and signal line 212, signal electrode 214 and surface earthing electrode 215, so needn't excise substrate, assembling is easy, and its operating efficiency improves.In addition, because Gunn diode 220 relative flat panel substrate 211 are with the directly installation of posture that faces down, so can not produce the problem of the stray inductance that produces when using gold ribbon.In addition, the heat that Gunn diode 220 produces is passed to fin 230 through plush copper 227,228 and the good flat panel substrate 211 of heat conductivity, so good heat dissipation effect.Again, because Gunn diode 220 is by plush copper 228 supportings of the cathode electrode 225K of both sides, so can prevent from the semiconductor multilayer as the actual central authorities of working of Gunn diode is partly applied excessive load.

In addition, in the above, be that the part of signal line 212 and part that Gunn diode 220 is installed are arranged on the common flat panel substrate 211, but the conductor wire that also can be located on the different substrates with gold ribbon etc. is connected.In addition, also can not use V-shape hole 217, wait with band surface earthing electrode 215 is connected with the grounding electrode 216 at the back side.

Have in the above, the signal line 212 of circuit base plate 210 is made the suspension type circuit again, but if at the whole back side of flat panel substrate 211 grounding electrode 216 is set, just becomes microstrip line.In addition, this circuit also can be at the upper face center signalization circuit of flat panel substrate 211, and clips this signal line on same a pair of grounding electrode is set, and makes the coplane circuit.At this moment, the plush copper 227 of the anode electrode 225A of Gunn diode 220 is connected with the signal line of central authorities, and the both sides plush copper 228 of cathode electrode 225K is connected with grounding electrode gets final product.

Also have, the anode electrode 225A of Gunn diode 220, cathode electrode 225K can be opposite because of the concentration gradient of active layer, and at this moment, the polarity of voltage of suitably selecting to put on chokes part portion 213 gets final product.

Shown in Figure 23 is another example of NRD waveguide Gunn.Gunn diode 220 will be installed and be bearing in circuit base plate 210 on the fin 230 at this and be configured as parallelly with parallel flat 201,202, and the bottom of the top of its signal line 212 and medium strip line 203 is arranged in a linearity.This moment, the electromagnetic transmission mode of transmission in medium strip line 203 was the LSE mould.

Figure 24 is with circuit base plate 210 opposing parallel flat boards 201,202 vertically arranged figure.In this form, has the advantage that higher mode is difficult to set up in signal line 212.Also can medium strip line 203 and signal line 212 be arranged in line, and circuit base plate 210 opposing parallel flat boards 201,202 are installed in vertical state as shown in figure 23 again.

Example 7 now is described.

Shown in Figure 25 for the NRD waveguide Gunn structure of the present invention's the 7th example.The NRD waveguide loop is the structure that clips medium strip line 203 between two metal parallel flats 201,202, and is the same with existing example.In this example, two Gunn diodes 220 are installed on circuit base plate 210, make their opposing parallel flat boards 202, the fin 230 by ground connection, heat radiation is supported.

Circuit base plate 210 is shown in the (a) and (b) of Figure 26, and (for example resistivity is 10 in half insulation or insulating properties ⁶Above about Ω cm, pyroconductivity is AIN, Si above about 140W/mK, SiC, diamond etc.) the surface of flat panel substrate 211, form signal line 212, this signal line 212 is applied chokes part portion 213, two signal electrodes 214 that are connected with the two ends of this signal line 212 of Dc bias and clips the surperficial grounding electrode 215 of two couples that these two signal electrodes 214 dispose respectively, be formed with grounding electrode 216 overleaf, surface earthing electrode 215 ground electrode 216 that connects is connected by V-shape hole 217.The back side of the signal line 212 of this circuit base plate 210 does not have grounding electrode, forms the suspension type circuit.

Gunn diode 220 is shown in the (a) and (b) of Figure 27, at stacked the 1st contact layer 222 of the upper surface of semiconductor substrate 221, active layer the 223, the 2nd contact layer 224 and metal level 225, and in the circular depressions 226 of central authorities' formation from metal level 225 basic arrival the 1st contact layers 222, thereby this metal level 225 is divided into anode electrode 225A and cathode electrode 225K, and on this anode electrode 225A, form the plush copper 227 of the Au of easy thermo-compressed, on cathode electrode 225K, form the plush copper 228 of the same Au of same height simultaneously.This plush copper 227 and 228 also with anode electrode 225A, cathode electrode 225K equivalence.Give an example, semiconductor substrate 221 is 1-2 * 10 by impurity concentration ¹⁸Atom/cm ³The n p type gallium arensidep constitute, the 1st contact layer 222 is 2 * 10 by impurity concentration ¹⁸Atom/cm ³, thickness is that the n p type gallium arensidep of 1.5 μ m constitutes, active layer 223 is 1.2 * 10 by impurity concentration ¹⁶Atom/cm ³, thickness is that the n p type gallium arensidep of 1.6 μ m constitutes, the 2nd contact layer 224 is 1 * 10 by impurity concentration ¹⁸Atom/cm ³, thickness is that the n p type gallium arensidep of 0.3 μ m constitutes. also can replace GaAs, use other compound semiconductors such as indium phosphide.The area of the division part active layer corresponding with anode electrode 225A of this Gunn diode 220 is set at the area (laterally section is long-pending) of certain operating current that can obtain Gunn diode.

In addition, about the active layer area corresponding with cathode electrode 225K, by being active layer area 10 times or more corresponding with anode electrode 225A, making the resistance of the semiconductor multilayer portion of lower floor of this cathode electrode 225K is below 1/10 of anode electrode 225A, make this part not play the Gunn diode effect, in fact play low-resistance effect.

In addition, this Gunn diode 220 also can be shown in Figure 27 (c), the Gunn diode 220 ' that is replaced as the 2nd contact layer 224 of having removed the cathode electrode 225K lower floor among Figure 27 (b) and active layer 223 backs and constitutes, on the 1st contact layer 222, directly be covered with cathode electrode 225K, and the upper surface that its plush copper 228 is arranged to the plush copper 227 of anode electrode 225A is an equal height.

By thermo-compressed Gunn diode 220 is installed on the flat panel substrate 211 of circuit base plate 210, the plush copper 227 of its anode electrode 225A is connected with signal electrode 214, and a pair of plush copper 228 of cathode electrode 225K is connected with a pair of surface earthing electrode 215.And, grounding electrode 216 parts of circuit base plate 210 are connected with fin 230, be connected ground connection by this fin 230 with dull and stereotyped 202.Another Gunn diode is carried out too.

The installation of 210 pairs of NRD waveguide loops of circuit base plate as shown in figure 25, make the flat panel substrate 211 of circuit base plate 210 vertical with parallel flat 201,202, and the bottom of the relative medium strip line 203 of the central portion of signal line 212 is vertically close, installs like this.If chokes part portion 213 is applied direct voltage, concerning from nearer Gunn diode 220 the electric currents of chokes part 213 just from signal electrode 214, and concerning from chokes part 213 Gunn diode 220 electric currents far away through signal line 212 from signal electrode 214, through the path flow of the grounding electrode 216 at V-shape hole 217, the back side, fin 230 and dull and stereotyped 202, by two Gunn diodes 220 generate electromagnetic waves (microwave).Resonance takes place at signal line 212 in the electromagnetic wave that produces, and its part is coupled and blazes abroad with medium strip line 203.

In this example, because on flat panel substrate 211, be formed with chokes part portion 213, thus can utilize etching to form simultaneously itself and signal line 212, signal electrode 214 and surface earthing electrode 215, so needn't excise substrate, assembling is easy, and its operating efficiency improves.

In addition, because Gunn diode 220 relative flat panel substrate 211 are with the directly installation of posture that faces down, so can not produce the problem of the stray inductance that produces when using gold ribbon.

In addition, the heat that Gunn diode 220 produces is passed to fin 230 through plush copper 227,228 and the good flat panel substrate 211 of heat conductivity, so good heat dissipation effect.Because Gunn diode 220 is by plush copper 228 supporting of the cathode electrode 225K of both sides, partly apply excessive load so can prevent the semiconductor multilayer of central authorities that reality is worked as Gunn diode again.

Again, in the above, the signal line 212 of circuit base plate 210 is made the suspension type circuit, but if at the whole back side of flat panel substrate 211 grounding electrode 216 is set, just becomes microstrip line.In addition, this circuit also can be at the upper face center signalization circuit of flat panel substrate 211, and clips this signal line on same a pair of grounding electrode is set, and makes the coplane circuit.At this moment, as long as the plush copper 227 of the anode electrode 225A of Gunn diode 220 is connected with central signal line, and the plush copper 228 of cathode electrode 225K both sides is connected with grounding electrode gets final product.

Also have, the anode electrode 225A of Gunn diode 220, cathode electrode 225K can be opposite because of the concentration gradient of active layer, and at this moment, the polarity of voltage of suitably selecting to put on chokes part portion 213 gets final product.

Figure 28 is the figure that circuit base plate 210 opposing parallel flat boards 201,202 are installed abreast.Such as mentioned above Gunn diode of the present invention is because the etching that will delimit the zone of Gunn diode effect is a electrode layer by will being formed on this top, zone carries out as the dry etching of cooperation certainly of mask, so can reduce the difference of Gunn diode characteristic.

In addition, Gunn diode of the present invention is because can be provided with cathode electrode and anode electrode by the height with same degree, so can install with ventricumbent posture on same.Therefore, needn't be assembled in the bullet shape shell as existing, the assembling of flat panel substrate is easy to, very big advantage is arranged aspect assembling.

Have again,,, can eliminate the difference of the loop characteristic that does not cause on an equal basis because of gold ribbon length so can not produce stray inductance because needn't be connected with microelectrode with gold ribbon when mounted.

Also have, partly be separated into a plurality ofly by the meas structure that will in fact play the Gunn diode effect, radiating efficiency significantly improves, and can increase substantially oscillation efficiency and hunting power.

In addition, when install constituting oscillator, because this oscillator section is by Gunn diode or add the conductive plate substrate and shield, its Q value can improve so that phase noise reduces significantly in institute.

Also have, apply the chokes part that bias voltage uses and become simple with being connected of Gunn diode, assembling easily, its operating efficiency improves.In addition, the installation of Gunn diode does not need gold ribbon, can not produce stray inductance.Again, because the heat that Gunn diode produces passes to fin through substrate, so the radiating efficiency height.

Have, apply the chokes part that bias voltage uses and become simple with being connected of Gunn diode, it is convenient that assembling becomes, and its operating efficiency improves.

In addition, do not need gold ribbon during the dress Gunn diode, can not produce stray inductance.

Again because the heat that Gunn diode produces passes to fin through substrate, so good heat dissipation effect.

Claims (12)

1. NRD waveguide Gunn, the parallel flat that its two metallic plates constitute is with the arranged spaced below 1/2 of the free space wavelength of institute's frequency of utilization, NRD waveguide loop and the Gunn diode of clamping the medium strip line between this parallel flat are combined, form the NRD waveguide Gunn thus, it is characterized in that

Have: be formed with on the surface signal electrode that is connected with signal line and with the insulating properties of the grounding electrode of this signal electrode insulation or the flat panel substrate of half insulation,

Be formed with that anode electrode is connected with the signal electrode of described flat panel substrate with one of cathode electrode and this two electrode on one side and Gunn diode that another electrode is connected with described grounding electrode,

And, the fin at the described flat panel substrate of one of the described relatively parallel flat supporting back side,

And, the top of the described signal line of described flat panel substrate and described medium strip line electromagnetic coupled.

2. NRD waveguide Gunn according to claim 1, it is characterized in that, it is parallel that the described relatively parallel flat of described flat panel substrate of described Gunn diode in connection, and the described relatively medium strip line of described signal line electromagnetic coupled vertically.

3 NRD waveguide Gunn according to claim 1, it is characterized in that, it is parallel that the described relatively parallel flat of described flat panel substrate of described Gunn diode in connection, and the electromagnetic wave direct of travel of described signal line is identical with the electromagnetic wave direct of travel of described medium strip line, the bottom electromagnetic coupled of described signal line and described medium strip line.

4. according to claim 2 or 3 described NRD waveguide Gunn, it is characterized in that the posture of connection the described relatively parallel flat of described flat panel substrate of described Gunn diode makes into vertically from parallel.

5. according to claim 1,2,3 or 4 described NRD waveguide Gunn, it is characterized in that described signal line is the circuit that suspends, microstrip line or coplane circuit.

6. according to claim 1,2,3,4 or 5 described NRD waveguide Gunn, it is characterized in that described flat panel substrate has earthy electrode overleaf, this earthy electrode is connected by V-shape hole with described grounding electrode.

7. NRD waveguide Gunn, the parallel flat that its two metallic plates constitute is with the arranged spaced below 1/2 of the free space wavelength of institute's frequency of utilization, the NRD waveguide loop and the Gunn diode that will clip the medium strip line between this parallel flat are combined, it is characterized in that

Have: be formed with the insulating properties of the grounding electrode that insulate with two signal electrodes and relative each signal electrode of the connection of signal line two ends or the flat panel substrate of half insulation on the surface, be formed with that anode electrode is connected with the signal electrode of described flat panel substrate with one of cathode electrode and this two electrode on one side and two above Gunn diodes that another electrode is connected with described grounding electrode

And described relatively parallel flat supports the fin at the described flat panel substrate back side,

And, the substantial middle of the described signal line of described flat panel substrate and described medium strip line electromagnetic coupled.

8. NRD waveguide Gunn according to claim 7 is characterized in that, the length of described signal line be in this signal line wavelength roughly 1/2 or its integral multiple.

9 according to claim 7 or 8 described NRD waveguide Gunn, it is characterized in that, it is vertical with described parallel flat that the described flat panel substrate of described Gunn diode in connection, and the terminal part electromagnetic coupled of the substantial middle of described signal line and described medium strip line.

10. NRD waveguide Gunn according to claim 9 is characterized in that, it is parallel from vertically making into to make connection the posture of the described relatively parallel flat of described flat panel substrate of described Gunn diode.

11., it is characterized in that described signal line is circuit or microstrip line or the coplane circuit of suspending according to claim 7,8,9 or 10 described NRD waveguide Gunn.

12. according to claim 7,8,9,10 or 11 described NRD waveguide Gunn, it is characterized in that described flat panel substrate has earthy electrode overleaf, this earthy electrode is connected by V-shape hole with described grounding electrode.

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