CN102738392A - Gunn diode, preparation method and millimeter wave oscillator thereof - Google Patents
Gunn diode, preparation method and millimeter wave oscillator thereof Download PDFInfo
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- CN102738392A CN102738392A CN2012102339139A CN201210233913A CN102738392A CN 102738392 A CN102738392 A CN 102738392A CN 2012102339139 A CN2012102339139 A CN 2012102339139A CN 201210233913 A CN201210233913 A CN 201210233913A CN 102738392 A CN102738392 A CN 102738392A
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Abstract
The invention discloses a Gunn diode, a preparation method and a power synthesis millimeter wave oscillator of the Gunn diode, belonging to the technical field of semiconductor devices. The Gunn diode sequentially comprises an integrated hear sink, a metal diode, a transition layer, a second contact layer, a top electrode and a gold thickening electrode from bottom to top. The preparation method comprises the following steps: growing a first contact layer, the transition layer and the second contact layer orderly on the semiconductor substrate, corroding a deep groove, evaporating the electrodes and electroplating the heat sink on the sample surface, removing the substrate, evaporating the top electrode, and conducting dry etching to form the Gunn diode. The millimeter wave oscillator seals the prepared Gunn diodes having good uniformity under a resonance cap in a waveguide cavity in pairs and at intervals of lambadag/2. According to the method, the processing fragility of the material is reduced, the heat dissipation performance of the device is improved, and the device performance difference is reduced. The millimeter wave oscillator outputs the radio frequency after multiple Gunn diodes are coupled, so that the output power is increased by times.
Description
Technical field
The present invention relates to technical field of semiconductor device, specially refer to the good Gunn diode of consistency, its preparation method and based on the power coupling output millimetre-wave generator of this Gunn diode.
Background technology
Characteristics such as it is high that millimeter wave has space/temporal resolution, and frequency band atmospheric window frequency band reaches tens THz, can be used in the exploration structure of matter, and signal to noise ratio height and penetrability are good.At present, millimeter wave shows important strategic position and and fabulous application prospect at numerous areas such as military and national defense, national security, national economy.The oscillator that is used to produce the milli ripple is Gunn diode normally, and Gunn diode is generally prepared by compound semiconductor materials such as GaAs and InP.Electronics in these compound semiconductor materials under feeble field mobility up to thousands of cm
2/ V, the electron transfer that under high field, is accelerated is to the big satellite energy valley of effective mass, and mobility reduces; Produce negative differential mobility in the body; Thereby appearance of negative differential conductance phenomenon, and then cause the unsteadiness on the thermodynamics, the farmland that has been usually said generation; And electronics moves from the negative electrode anode.The generation on farmland, the result of transmitting, bury in oblivion the regeneration repetition obtain oscillating current and form radio frequency output.
The frequency of oscillation of Gunn diode is by the decision of farmland migration distance, and in order to reach best oscillation effect, the doping content in migration zone, farmland (getting over layer) must satisfy certain condition (as 1 * 10 with the product of getting over layer thickness
12/ cm
2).The Gunn diode that millimeter wave uses must make that this migration distance is extremely short to be 1-2 μ m.So get over the doping content of layer in millimere-wave band quite high.In addition, the current density during work because current density increases, is caused getting over layer temperature and rises in millimere-wave band by the product decision of getting over layer doping content and saturated electrons speed, and oscillation efficiency descends.In order to address this problem, usually the millimeter wave Gunn diode to be designed to get over the meas structure of tens microns of layer diameters, and it is installed on the gold or diamond heat sink of diameter hundreds of micron.
The power output of Gunn diode is along with the increase of output frequency sharply reduces; Such as InP base Gunn diode at the exportable 200mW of 103GHz; And only can export 80mW at 152GHz, and adopt the output of second harmonic form power to have only 3.5mW214GHz, adopt the output of triple-frequency harmonics form power to have only 45 μ W409GHz; People such as H.Eisele utilize the gradient doping structure, improve technology and also can only realize 85 μ W480GHz in 2010.For specific gunn device, the power output that it produces is limited, and concrete demand has proposed practical requirement to the millimetre-wave generator power output in our actual life.The too low meeting of power output such as radio-frequency oscillator in the airport security imaging reduces the definition of imaging, and the sensitivity of detection descends; Lower powered communication signal can be very a little less than, be difficult to discrimination, fault rate increases.Plural Gunn diode makes its power coupling just can obtain the output greater than single pipe power as long as the seat that is provided with is suitable.Say that in a sense multitube coupling output RF device can replace the further research and development that improve the high-power output performance of pipe under many circumstances.
Many pipes are arranged on when making the coupling of its power in the same resonant cavity structure of resonant cavity must guarantee each power source pipe that energy is provided vibration in same frequency, and same-phase output.Use Gunn diode can avoid the complicated circuitry structure fortunately as the millimeter wave power source.Just proposed many Gunn diodes are placed in the same microwave oscillator as far back as people such as Kaneko in 1971; Realize the imagination of high-power RF output through the power coupling of these pipes; This article is published in IEEE G-MTT International Microwave Symposium Proceedings.1971; Pp.156, many pipes are coupling on the waveguide cavity between the lower wall, and the microwave energy that pipe produces is parallel to be coupled to waveguide cavity output.Though this structure that people such as Kaneko propose has been showed the feasibility that increases power output through using multitube power to be coupling in the single-point frequency,, provide the circuit of pipe bias voltage too complicated; Adopt many waveguide cavity structure too complicated, and it is too big to take up room.
Summary of the invention
In order to address the above problem, the invention provides the high Gunn diode of a kind of job stability; The zanjon relieve stresses that utilization erodes away reduces the materials processing fragility effectively, utilizes integral heat sinks heat radiation to improve the heat dispersion of Gunn diode, utilizes the autoregistration dry etching to reduce the preparation method of this Gunn diode of the performance difference of device; Simultaneously, based on this Gunn diode, the invention allows for the millimetre-wave generator that after a plurality of Gunn diode couplings power output is increased.
Gunn diode provided by the invention comprises integral heat sinks, metal electrode from the bottom to top successively, gets over layer, second contact layer, top electrode and Jin Jia thick electrode.
As preferably, at said metal electrode with get over and also comprise first contact layer between the layer.
Preparation method based on Gunn diode provided by the invention may further comprise the steps:
On Semiconductor substrate successively deposit attack stop layer, second contact layer, get over the layer, first contact layer, form the I intermediate product;
Said I intermediate product surface is corroded,, form zanjon, thereby make said I intermediate product begin to be isolated by said zanjon, form the II intermediate product until the part of said corrosion stop layer from said first contact layer until said corrosion stop layer;
At the remainder surface evaporation electrode of said zanjon and said first contact layer, said electrode is annealed, make said electrode layer realize ohmic contact; Afterwards; Gold-plated on said depositing electrode, said Gold plated Layer is integral heat sinks, forms the III intermediate product;
Said Semiconductor substrate is corroded said substrate removal, afterwards, said corrosion stop layer is corroded said corrosion stop layer removal, said second contact layer is exposed, form said IV intermediate product;
On said second contact layer, make the position of top electrode by lithography, on said second contact layer, evaporate top electrode afterwards, gold-plated on said top electrode again, said Gold plated Layer is gold and adds thick electrode, forms the V intermediate product;
Said V intermediate product is in part outside the scope that top electrode covers corrodes the back and remove, product is said Gunn diode end-product.
As preferably, said Semiconductor substrate to be corroded when said substrate removed, selective corrosion is also removed substrate, perhaps corrodes fully and removes substrate.
As preferably, said V intermediate product is in part outside the scope that top electrode covers corrodes the back when removing, said corrosion is top electrode autoregistration dry etching or carries out wet etching with top electrode as mask.
Millimetre-wave generator based on Gunn diode provided by the invention; Comprise waveguide cavity; It is characterized in that the distance of every interval λ g/2 is enclosed a said Gunn diode or is enclosed in two said Gunn diodes under the same resonance cap in said waveguide cavity.
As preferably, said Gunn diode is to enclose in the copper post to enclose in the said waveguide cavity again, perhaps uses the ceramic ring material to enclose in the said waveguide cavity through hot pressing spun gold lead.
As preferably, said two said Gunn diodes under same resonance cap obtain the pressure welding of resonance cap on the Gunn diode top electrode.
The present invention utilizes corrosion zanjon relieve stresses to reduce the processing fragile property of material, utilizes integral heat sinks to improve heat dispersion, utilizes the autoregistration dry etching to reduce device performance difference, and Gunn diode job stability provided by the invention is high, consistency is strong; Millimetre-wave generator provided by the invention increases in a plurality of these Gunn diode coupling back power outputs, can solve the little problem of Gunn diode device high frequency power output effectively.
Description of drawings
The InP type Gunn diode component structure sketch map that Fig. 1 provides for the embodiment of the invention;
I intermediate product structural representation among the InP type Gunn diode preparation method that Fig. 2 provides for the embodiment of the invention;
II intermediate product structural representation among the InP type Gunn diode preparation method that Fig. 3 provides for the embodiment of the invention;
III intermediate product structural representation among the InP type Gunn diode preparation method that Fig. 4 provides for the embodiment of the invention;
IV intermediate product structural representation among the InP type Gunn diode preparation method that Fig. 5 provides for the embodiment of the invention;
V intermediate product structural representation among the InP type Gunn diode preparation method that Fig. 6 provides for the embodiment of the invention;
InP type Gunn diode end-product structural representation among the InP type Gunn diode preparation method that Fig. 7 provides for the embodiment of the invention;
The millimetre-wave generator that Fig. 8 provides for the embodiment of the invention many to every pair in Gunn diode Gunn diode in two separate ranks before and after at interval
place the structural representation of said waveguide cavity;
The top electrode of every pair of Gunn diode of the millimetre-wave generator that Fig. 9 provides for the embodiment of the invention is bonded the structural representation under same resonance cap.
Embodiment
In order to understand the present invention in depth, the present invention is elaborated below in conjunction with accompanying drawing and specific embodiment.
The present invention is that example is elaborated with the millimetre-wave generator that InP type Gunn diode, its preparation method reach based on this Gunn diode.
Referring to accompanying drawing 1, InP type Gunn diode provided by the invention comprises successively that from the bottom to top integral heat sinks 7, depositing electrode 6, InP get over layer 4, InP second contact layer 3, top electrode 2 and Jin Jia thick electrode 1.
Wherein, at metal electrode with get over and also comprise InP first contact layer 5 between the layer.
Wherein, the material of integral heat sinks 7 can be gold, and thickness can be 25 μ m; Each component and ratio thereof can be Ni: Ge: Au: Ge: Ni: Au=40 in the depositing electrode 6: 40: 660: 80: 30:
The thickness of InP first contact layer 5 can be 500nm, and doping content can be 2 * 10
18Atom/cm
3The thickness that InP gets over layer 4 can be 1300nm, and doping content can be 1 * 10
16Atom/cm
3The thickness of InP second contact layer 3 can be 500nm, and doping content can be 2 * 10
18Atom/cm
3The diameter of top electrode 2 can be 20～65 μ m; The thickness that gold adds thick electrode 1 can be 25 μ m.
Preparation method based on InP type Gunn diode provided by the invention may further comprise the steps:
Referring to accompanying drawing 2, on InP substrate 8, deposit InGaAs corrosion stop layer 9, InP second contact layer 3 successively, InP gets over layer 4, InP first contact layer 5, forms the I intermediate product.
Referring to accompanying drawing 3; After carrying out photoetching in InP first contact 5, begin the I intermediate product is corroded until InGaAs corrosion stop layer 9 from InP first contact layer 5; The position formation zanjon 10 that is corroded and removes; Thereby the I intermediate product is isolated by zanjon 10 until the part of InGaAs corrosion stop layer 9 from 5 beginnings of InP first contact layer, form the II intermediate product.In the present embodiment, the width of zanjon 10 is 100 μ m, and the I intermediate product is isolated into the square of 400 μ m * 400 μ m by zanjon 10 until the part of InGaAs corrosion stop layer 9 from 5 beginnings of InP first contact layer.
Referring to accompanying drawing 4,, depositing electrode is annealed at the remainder surface evaporation depositing electrode of zanjon 10 and InP first contact layer 5; Make depositing electrode realize ohmic contact; Afterwards, gold-plated on depositing electrode, Gold plated Layer is integral heat sinks; The master serial number of depositing electrode and integral heat sinks is 11, forms the III intermediate product.In the present embodiment, annealing temperature is 370 ℃, and the annealing duration is 80s.
Referring to accompanying drawing 5, InP substrate 8 corroded InP substrate 8 is removed, afterwards, InGaAs corrosion stop layer 9 corroded InGaAs is corroded stop layer 9 remove, InP second contact layer 3 is exposed, form the IV intermediate product.
Referring to accompanying drawing 6, on InP second contact layer 3, evaporate top electrode after on InP second contact layer 3, making the position of top electrode by lithography, afterwards; Gold-plated on top electrode; Gold plated Layer is gold and adds thick electrode, and the master serial number of top electrode and Jin Jia thick electrode is 12, forms the V intermediate product.
Referring to accompanying drawing 7, the V intermediate product is in part outside the scope that top electrode covers corrodes the back and remove, product is InP type Gunn diode end-product.
Wherein, the material of integral heat sinks 7 can be gold, and thickness can be 25 μ m; Each component and ratio thereof can be Ni: Ge: Au: Ge: Ni: Au=40 in the depositing electrode 6: 40: 660: 80: 30:
The thickness of InP first contact layer 5 can be 500nm, and doping content can be 2 * 10
18Atom/cm
3The thickness that InP gets over layer 4 can be 1300nm, and doping content can be 1 * 10
16Atom/cm
3The thickness of InP second contact layer 3 can be 500nm, and doping content can be 2 * 10
18Atom/cm
3The diameter of top electrode 2 can be 20～65 μ m; The thickness that gold adds thick electrode 1 can be 25 μ m.
Wherein, deposition is to adopt mocvd method to realize.
Wherein, when InP substrate 8 is corroded, can selective corrosion and remove substrate, perhaps corrode fully and remove substrate.Component and proportioning are HCl: H in the corrosive liquid
2O=3: 1.
Wherein, when InGaAs corrosion stop layer 9 was corroded, component and proportioning were H in the corrosive liquid
3PO
4: H
2O
2: H
2O=3: 1: 50.
Wherein, the V intermediate product is in part outside the scope that top electrode covers corrodes the back when removing, corrode to top electrode autoregistration dry etching or carry out wet etching as mask with top electrode.
Referring to accompanying drawing 8; Millimetre-wave generator based on Gunn diode provided by the invention; Comprise waveguide cavity, the distance of every interval λ g/2 is enclosed a Gunn diode or is enclosed in two Gunn diodes under the same resonance cap in waveguide cavity, in the drawings be numbered 14.
Wherein, Gunn diode can be to enclose in the copper post to enclose in the waveguide cavity again, perhaps uses material such as ceramic ring through in the hot pressing spun gold lead inclosure waveguide cavity.
Wherein, referring to accompanying drawing 9, two Gunn diodes under same resonance cap obtain 13 pressure weldings of resonance cap on Gunn diode top electrode 2.
When using millimetre-wave generator provided by the invention, output frequency can reach 200GHz.
InP type Gunn diode job stability provided by the invention is high; Thereby the zanjon relieve stresses that preparation method's utilization of InP type Gunn diode provided by the invention erodes away has reduced the materials processing fragility effectively; Millimetre-wave generator provided by the invention increases in a plurality of these InP type Gunn diode coupling back power outputs.
Technical scheme of the present invention also is applicable to other types Gunn diode, its preparation method and millimetre-wave generator, but relevant parameter need adjust accordingly.
Above-described embodiment; The object of the invention, technical scheme and beneficial effect have been carried out further explain, and institute it should be understood that the above is merely embodiment of the present invention; Be not limited to the present invention; All within spirit of the present invention and principle, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. a Gunn diode is characterized in that, comprises integral heat sinks, metal electrode from the bottom to top successively, gets over layer, second contact layer, top electrode and Jin Jia thick electrode.
2. Gunn diode according to claim 1 is characterized in that, at said metal electrode with get over and also comprise first contact layer between the layer.
3. based on the preparation method of the described Gunn diode of claim 2, it is characterized in that, may further comprise the steps:
On Semiconductor substrate successively deposit attack stop layer, second contact layer, get over the layer, first contact layer, form the I intermediate product;
Said I intermediate product surface is corroded,, form zanjon, thereby make said I intermediate product begin to be isolated by said zanjon, form the II intermediate product until the part of said corrosion stop layer from said first contact layer until said corrosion stop layer;
At the remainder surface evaporation electrode of said zanjon and said first contact layer, said electrode is annealed, make said electrode layer realize ohmic contact; Afterwards; Gold-plated on said depositing electrode, said Gold plated Layer is integral heat sinks, forms the III intermediate product;
Said Semiconductor substrate is corroded said substrate removal, afterwards, said corrosion stop layer is corroded said corrosion stop layer removal, said second contact layer is exposed, form said IV intermediate product;
On said second contact layer, make the position of top electrode by lithography, on said second contact layer, evaporate top electrode afterwards, gold-plated on said top electrode again, said Gold plated Layer is gold and adds thick electrode, forms the V intermediate product;
Said V intermediate product is in part outside the scope that top electrode covers corrodes the back and remove, product is said Gunn diode end-product.
4. the preparation method of Gunn diode according to claim 3 is characterized in that, said Semiconductor substrate is corroded when said substrate removed, and selective corrosion is also removed substrate, perhaps corrodes fully and removes substrate.
5. the preparation method of Gunn diode according to claim 3; It is characterized in that; Said V intermediate product is in part outside the scope that top electrode covers corrodes the back when removing, said corrosion is top electrode autoregistration dry etching or carries out wet etching with top electrode as mask.
6. based on the millimetre-wave generator of claim 1 or 2 described Gunn diodes; Comprise waveguide cavity; It is characterized in that the distance of every interval λ g/2 is enclosed a said Gunn diode or is enclosed in two said Gunn diodes under the same resonance cap in said waveguide cavity.
7. millimetre-wave generator according to claim 6 is characterized in that, said Gunn diode is to enclose in the copper post to enclose in the said waveguide cavity again, perhaps uses the ceramic ring material to enclose in the said waveguide cavity through hot pressing spun gold lead.
8. millimetre-wave generator according to claim 7 is characterized in that, said two said Gunn diodes under same resonance cap obtain the pressure welding of resonance cap on the Gunn diode top electrode.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104681721A (en) * | 2015-03-15 | 2015-06-03 | 西安电子科技大学 | GaN Gunn diode based on notch structure and manufacturing method for GaN Gunn diode |
| CN105207625A (en) * | 2015-10-08 | 2015-12-30 | 电子科技大学 | Broadband terahertz harmonic mixer |
| CN115064853A (en) * | 2022-05-22 | 2022-09-16 | 上海图灵智算量子科技有限公司 | T-shaped waveguide |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104681721A (en) * | 2015-03-15 | 2015-06-03 | 西安电子科技大学 | GaN Gunn diode based on notch structure and manufacturing method for GaN Gunn diode |
| CN104681721B (en) * | 2015-03-15 | 2017-10-24 | 西安电子科技大学 | GaN Gunn diodes and preparation method based on notch structures |
| CN105207625A (en) * | 2015-10-08 | 2015-12-30 | 电子科技大学 | Broadband terahertz harmonic mixer |
| CN105207625B (en) * | 2015-10-08 | 2018-09-07 | 电子科技大学 | A kind of broadband Terahertz harmonic mixer |
| CN115064853A (en) * | 2022-05-22 | 2022-09-16 | 上海图灵智算量子科技有限公司 | T-shaped waveguide |
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