CN1851955A - Organic electroluminescent device and preparing method - Google Patents
Organic electroluminescent device and preparing method Download PDFInfo
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- CN1851955A CN1851955A CN 200610016820 CN200610016820A CN1851955A CN 1851955 A CN1851955 A CN 1851955A CN 200610016820 CN200610016820 CN 200610016820 CN 200610016820 A CN200610016820 A CN 200610016820A CN 1851955 A CN1851955 A CN 1851955A
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Abstract
This invention relates to an organic electroluminescence device with a metal oxide modification layer and its preparation method, which applies an interlayer structure to evaporate a metal oxide film between an anode ITO and a cavity transmission layer to prepare a fluorescent dye in the structure of ITO/metal oxide/N, N'-double(1-naphthalene bse)-N, N'-diphenyl-1, 1'-diphenyl-4, 4'-diamine NPB/fluorescent dye, a first main material, a second main material/8-Alq3/electronic injection layer/metal cathode electroluminescence device driven by DC, the maximum current efficiency is 15.1sd/A, the maximum power efficiency is 15.01w/W, the maximum brightness is 48300cd/m2 and the half life is over 50000 hours with the 100cd/m2 initial brightness.
Description
Technical field
The present invention relates to a kind of organic electroluminescence device that contains the modified metal oxide layer and preparation method thereof.
Background technology
ORGANIC ELECTROLUMINESCENCE DISPLAYS is regarded as emerging Display Technique the most popular in the Flat Panel Display Industry, has obtained extensive studies at present.Compare with inorganic electroluminescence device, organic electroluminescence device have the material range of choice wide, can realize by blue light region to the full color of red light district show, driving voltage is low, luminosity and luminous efficiency height, the visual angle is wide, response speed is fast, manufacture craft is simple, cost is low, and easily realize plurality of advantages such as large tracts of land and flexible demonstrations, thereby obtained developing rapidly in the past more than 10 year.At present, the research in organic light emitting display field is not limited to academia already, nearly all internationally recognizable electronics major company and chemical company all drops into huge manpower and fund enters this research field, present the situation that research, exploitation and industrialization advance side by side, the industrialization of rapidly marching toward of ORGANIC ELECTROLUMINESCENCE DISPLAYS technology.
Organic Light Emitting Diode by people such as Deng of Kodak high official position invention in 1987 be a kind of double-deck sandwich structure (Deng Qingyun, ten thousand this come section, the Applied Physics wall bulletin, 51 phases, 913 pages, 1987, C.W.Tang, S.A.VanSlyke, Appl.Phys.Lett.51, pp913, (1987), United States Patent (USP), the patent No.: 4,769,292 and 4,885,211, U.S.Pat.Nos.4,769,292 and 4,885,211), it is made up of hole transmission layer and electric transmission/luminescent layer, and is clipped between indium tin oxide ITO and the metal electrode.Multilayer device comprises that hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and dye adulterated type device also were designed to create afterwards, by organic layer thickness optimization and preparation technology's improvement, the electroluminescent properties of device has obtained improving greatly.
A large amount of experimental studies show that the character of electrode/organic interface has directly determined the electroluminescent properties of device, in order to realize high performance organic electroluminescence device, require electronics and hole be able to effectively inject.For cathode side, usually adopt low workfunction metal such as Al, Mg:Ag, Al:Li etc. to do electrode, found afterwards, between Al electrode and organic layer, introduce very thin insulating barrier such as the LiF (Hong Liangsen of one deck, Deng Qingyun etc., the Applied Physics wall bulletin, 70 phases, 152 pages, 1997, L.S.Huang, C.W.Tang, and M.G.Mason, Appl.Phys.Lett.70, pp152 (1997)) can improve the injection efficiency of electronics significantly, and compare with the low workfunction metal electrode, the brightness of device, efficient and stability have obtained bigger improvement.And in anode-side, usually with transparent electroconductive indium tin oxide ITO as electrode, because the electrical characteristics of ITO depend on the content of oxygen consumingly, use plasma like this, means such as ozone and chemistry are handled ITO just can change its work function (Jin Zhisheng, Richard. Fu Ruide, the card Buddhist relics, the Applied Physics wall bulletin, 74 phases, 3084 pages, 1999, J.S.Kim, R.H.Friend, and F.Cacialli, Appl.Phys.Lett.74, pp3084 (1999)), the injection efficiency in hole is improved, also have between ITO and organic cavity transmission layer one deck organic layer of introducing such as phthalein cyanogen copper CuPc (ten thousand this come section, Chen Jinxin, Deng Qingyun Applied Physics wall bulletin, 69 phases, 2160 pages, 1996, S.A.VanSlyke, C.H.Chen, andC.W.Tang, Appl.Phys.Lett.69, pp2160 (1996)), insulating barrier such as AlF3 (United States Patent (USP), the patent No.: 2003/0107042A1, U.S.Pat.Nos.2003/0107042A1), metal level such as platinum Pt (Shen Yulong etc., advanced material, 13 phases, 1234 pages, calendar year 2001, Y.L.Shen, D.B.Jacobs, G.G.Malliaras, G.Koley, M.G.Spencer, and A.Ioannidis, Adv.Mater.13, pp1234 (2001)) etc. method improves the hole and injects.Yet experiment is found, the performance of electroluminescent device of introducing the method preparation of boundary layer with above-mentioned material between ITO and hole transmission layer depends on the thickness of boundary layer consumingly, and this produces in batches for undoubtedly the industrialization of organic elctroluminescent device and has brought technology difficulty.
Summary of the invention
One of purpose of the present invention provides the organic electroluminescence device that contains the modified metal oxide layer;
Another object of the present invention provides this preparation method who contains the organic electroluminescence device of modified metal oxide layer.
Shown in attached Fig. 1 and 2, the organic electroluminescence device that contains the modified metal oxide layer provided by the invention, it is made of: substrate 1, anode layer 2, metal oxide layer 3, hole transmission layer 4, luminescent layer 5, electron transfer layer 6 and cathode layer 7; Wherein, substrate 1, anode layer 2, metal oxide layer 3, hole transmission layer 4, luminescent layer 5, electron transfer layer 6 and cathode layer 7 are connected in turn.
1. vanadic oxide (V
2O
5), molybdenum trioxide (MoO
3) and tungstic acid (WO
3) in any;
2. metal oxide layer 3 can be any in the oxide of alkali metal Li, Na, K, Rb and Cs.
3. metal oxide layer 3 can be any in the oxide of alkaline-earth metal Be, Mg, Ca, Sr and Ba.
4. metal oxide layer 3 can be CrO
3, IrO
x, RuO
x, RhO
x, OsO
x, CuO, ZnO, SnO, MnO
3, any among NiO, ReO and the AgO.
5. metal oxide layer 3 can be rare-earth oxide CeO
2, Pr
2O
3, Nd
2O
3, Pm
2O
3, Sm
2O
3, Eu
2O
3, Gd
2O
3, Tb
4O
7, Dy
2O
3, Ho
2O
3, Er
2O
3, Tm
2O
3, Yb
2O
3And Lu
2O
3In any.
6. metal oxide layer 3 also can be the double-decker that any one metal oxide in above any two kinds of different metal oxides kinds is formed.
7. metal oxide layer 3 can also be the mixture that any one the metal oxide codope in above any two kinds of different metal oxides kinds is formed.
Wherein the organic dyestuff of Can Zaing is: 5,6,11,12-tetraphenyl-naphthonaphthalene (being called for short rubrene), the 2-{2-tert-butyl group-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydrochysene-1H, 5H-pyrido [3,2,1-ij] quinoline-9-yl)-vinyl]-pyrans-4-inner salt alkene }-malononitrile (being called for short DCJTB), 2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydrochysene-1H, 5H-pyrido [3,2,1-ij] quinoline-9-yl)-vinyl]-pyrans-4-inner salt alkene }-malononitrile (being called for short DCJTI), 4-(dicyano methylene)-2-methyl-6-[is right-(dimethylamino) styryl]-4H-pyrans (being called for short DCM), 10-(2-[4-morpholinodithio base)-2,3,6,7-tetrahydrochysene-1,1,7,7-tetramethyl-1H, 5H, 11H-(1)-benzo give a tongue-lashing the ketone group of muttering-(6,7,8-ij) wherein any one of quinolizine-11-ketone (be called for short C545T) and quinacridine.
The material of main part of the organic mixed material that organic dyestuff mixes is: Alq
3Mixture or Alq with NPB
3Mixture with Rubrene;
In the organic mixed material, the weight ratio of the organic dyestuff of doping and the mixture of material of main part is 1%-5%, Alq in the material of main part
3With NPB or Alq
3Be 1: 1 to 1: 2 with the weight ratio of Rubrene;
What electron transfer layer 6 adopted is: oxine aluminium (being called for short Alq3);
The combination electrode that cathode layer 7 adopts metallic aluminium (Al) and boundary layer lithium fluoride (LiF) to form.
When applying voltage between two electrodes, the organic electroluminescence device that contains the modified metal oxide layer will be luminous.
The preparation method of the organic electroluminescence device that contains the modified metal oxide layer of the present invention is as follows:
Earlier the ITO layer 2 on the ito glass substrate layer 1 is photo-etched into the electrode of fine strip shape, cleans then, nitrogen dries up, and after oxygen plasma treatment 2-5 minute it is transferred in the vacuum coating system, treats that vacuum degree reaches 1-5 * 10
-4During handkerchief, successively on ITO layer 2, evaporation metal oxide skin(coating) 3, hole transmission layer 4, luminescent layer 5, electron transfer layer 6 and cathode layer 7.
Wherein two electrodes intersect to form the luminous zone of device mutually, and area is 25 square millimeters; The thickness of metal oxide layer 3 is the 3-20 nanometer, and the thickness of hole transmission layer 4 is 100 to 200 nanometers, and the thickness of luminescent layer 5 is 30 to 50 nanometers, and the thickness of electron transfer layer 6 is the 30-50 nanometer, and the thickness of metal electrode layer 7 is the 100-500 nanometer; NPB, Rubrene and Alq in metal oxide layer 3, hole transmission layer 4, luminescent layer 5 and the electron transfer layer 6
3Evaporation rate be controlled at 0.2-0.3 nanometer per second, the evaporation rate of dyestuff DCJTB, DCJTI, DCM, C545T and quinacridine is controlled at 0.001-0.005 nanometer per second, the evaporation rate of cathode layer 7 is controlled at the 0.5-5 nm/sec; When luminescent layer 5 mixes, the organic dyestuff that organic mixed material mixes and two kinds of material of main parts while evaporation in different evaporation sources, the weight ratio of the organic dyestuff of doping and two kinds of material of main parts is controlled between the 1%-5%, two kinds of material of main part Alq
3With NPB or Alq
3And the weight ratio of Rubrene is between 1: 1 to 1: 2.
Advantage of the present invention is to adopt metal oxide as hole injection layer, the power efficiency and the current efficiency of device have been improved greatly, reduced the operating voltage of device, made device realize higher brightness and efficient under lower driving voltage, the stability of device has also obtained tangible improvement.At normal temperatures and pressures, through packaged device every square metre of (cd/m of 1000 candelas under 2 milliamperes of constant current driven
2) initial brightness is reduced to time of 80% above 3000 hours.And the electroluminescent device that traditional metal oxide layer 3 usefulness phthalein cyanogen copper CuPc replace, brightness and efficient have only half with the electroluminescent device of metal oxide layer 3, and under constant current driven 200cd/m
2Initial brightness 50% the time of being reduced to has only 500 hours.
Another advantage of the present invention is the thickness that the electroluminescent properties of device does not depend on metal oxide 3 consumingly, device shows much at one operating voltage, brightness, efficient and life-span in the thickness range from 3 nanometers to 20 nanometers, reduced the restricted problem of device preparation technology, and with the device of phthalein cyanogen copper CuPc alternative metals oxide skin(coating) 3, its electroluminescent properties obviously depends on the thickness of phthalein cyanogen copper CuPc, increase with phthalein cyanogen copper CuPc, the device operating voltage obviously increases, and power efficiency reduces.
Description of drawings
Fig. 1 is the structural representation of organic electroluminescence device.Among the figure, the 1st, glass or Merlon flexible substrate, the 2nd, anode layer ITO, the 3rd, metal oxide layer, the 4th, hole transmission layer, the 5th, luminescent layer, the 6th, electron transfer layer, the 7th, composite cathode.Fig. 1 is the accompanying drawing that the present invention makes a summary.
Fig. 2 is the generalized section of Fig. 1.
Fig. 3 is voltage-to-current density-luminosity response of the embodiment 1 of organic electroluminescence device of the present invention.Device brightness raises along with the rising of current density and voltage, and a bright voltage of device is 2.4 volts, is 20.0 volts at voltage, and current density is 323.0 milliamperes of every square centimeter of (mA/cm
2) time device high-high brightness be every square metre of (cd/m of 47600 candelas
2).
Fig. 4 is voltage-to-current density-luminosity response of organic electroluminescence device embodiment 2 of the present invention.A bright voltage of device is 2.4 volts, is 20.0 volts at voltage, and current density is 323.0mA/cm
2The time device high-high brightness can reach 48000cd/m
2
Fig. 5 is current efficiency-power efficiency-current density characteristic curve of organic electroluminescence device embodiment 1 of the present invention.The maximum current efficient of device is every ampere of 15.1 candela (cd/A).Maximum power efficiency is every watt of 15.0 lumen (1m/W).
Fig. 6 is the current efficiency-power efficiency-current density characteristic curve among the organic electroluminescence device embodiment 2 of the present invention.The highest current density of device is 13.6cd/A.Maximum power efficiency is 12.8lm/W.
Fig. 7 is the brightness-time response curve among the organic electroluminescence device embodiment 1 of the present invention.Device current is constant in 2 milliamperes, and device brightness arrives 100cd/m
2The 80% needed time of original intensity is 30000 hours.
Embodiment
The present invention will be further described below in conjunction with drawings and Examples.
Embodiment 1:
Earlier the ITO on the ito glass is photo-etched into the electrode of 5 mm wides, 30 millimeters long, cleans then, nitrogen dries up, and uses oxygen plasma treatment 2 minutes.In vacuum degree is 1-5 * 10
-4In the coating system of handkerchief, the MoO of evaporation 15 nanometer thickness successively on the ITO electrode of handling well
3, the NPB hole transmission layer of 150 nanometer thickness, the C545T doping NPB and the Alq of 37.5 nanometers
3Luminescent layer, the Alq of 37.5 nanometers
3The LiF boundary layer of electron transfer layer and 1 nanometer, last that evaporation and ITO intersect on LiF is wide 5 millimeters, grow 30 millimeters, the metal A l electrode of thickness 200 nanometers, and being prepared into structure is ITO/MoO
3The organic electroluminescence device of/NPB/C545T:NPB:Alq3/Alq3/LiF/Al.The effective area of organic electroluminescence device is 25 square millimeters.MoO
3, NPB and Alq
3Evaporation rate be controlled at 0.2 nanometer per second, the evaporation rate of C545T is controlled at 0.002 nanometer per second, the evaporation rate of LiF is controlled at 0.05 nanometer per second, the evaporation rate of electrode is controlled at 1 nanometer per second.Accompanying drawing 3 has provided with MoO
3Be the voltage-to-current density-luminosity response of the organic electroluminescence device of boundary layer, device to play bright voltage be 2.4 volts, the high-high brightness of device is 47600cd/m
2, be 1060cd/m in the brightness of 7.0 volts of voltages
2Accompanying drawing 5 has provided the current density-power efficiency-current efficiency characteristic curve of device, and the maximum current efficient of device is 15.1cd/A, and maximum power efficiency is 15.0lm/W.Accompanying drawing 7 has provided the working life curve of device under 2 milliamperes of constant currents, and device is 100cd/m at original intensity
2Life-span half-life surpassed 50000 hours.
Embodiment 2:
Earlier the ITO on the ito glass is photo-etched into the electrode of 5 mm wides, 30 millimeters long, cleans then, nitrogen dries up, and uses oxygen plasma treatment 2 minutes.In vacuum degree is 1-5 * 10
-4In the coating system of handkerchief, the V of evaporation 3 nanometer thickness successively on the ITO electrode of handling well
2O
5, the NPB hole transmission layer of 150 nanometer thickness, the C545T doping NPB and the Alq of 37.5 nanometers
3Luminescent layer, the Alq of 37.5 nanometers
3The LiF boundary layer of electron transfer layer and 1 nanometer, last that evaporation and ITO intersect on LiF is wide 5 millimeters, grow 30 millimeters, the metal A l electrode of thickness 200 nanometers, and being prepared into structure is ITO/V
2O
5/ NPB/C545T:NPB:Alq
3The organic electroluminescence device of/Alq3/LiF/Al.The effective area of organic electroluminescence device is 25 square millimeters.V
2O
5, NPB and Alq
3Evaporation rate be controlled at 0.2 nanometer per second, the evaporation rate of C545T is controlled at 0.002 nanometer per second, the evaporation rate of LiF is controlled at 0.05 nanometer per second, the evaporation rate of electrode is controlled at 1 nanometer per second.Accompanying drawing 4 has provided with V
2O
5Be the voltage-to-current density-luminosity response of the organic electroluminescence device of boundary layer, device to play bright voltage be 2.4 volts, the high-high brightness of device is 48000cd/m
2, be 2800cd/m in the brightness of 7.0 volts of voltages
2Accompanying drawing 6 has provided the current density-power efficiency-current efficiency characteristic curve of device, and the maximum current efficient of device is 13.6cd/A, and maximum power efficiency is 12.8lm/W.Device is 100cd/m at original intensity
2Life-span half-life surpassed 20000 hours.
Embodiment 3:
Earlier the ITO on the ito glass is photo-etched into the electrode of 5 mm wides, 30 millimeters long, cleans then, nitrogen dries up, and uses oxygen plasma treatment 2 minutes.In vacuum degree is 1-5 * 10
-4In the coating system of handkerchief, the WO of evaporation 5 nanometer thickness successively on the ITO electrode of handling well
3, the NPB hole transmission layer of 150 nanometer thickness, the C545T doping NPB and the Alq of 37.5 nanometers
3Luminescent layer, the Alq of 37.5 nanometers
3The LiF boundary layer of electron transfer layer and 1 nanometer, last that evaporation and ITO intersect on LiF is wide 5 millimeters, grow 30 millimeters, the metal A l electrode of thickness 200 nanometers, and being prepared into structure is ITO/WO
3/ NPB/C545T:NPB:Alq
3/ Alq
3The organic electroluminescence device of/LiF/Al.The effective area of organic electroluminescence device is 25 square millimeters.WO
3, NPB and Alq
3Evaporation rate be controlled at 0.2 nanometer per second, the evaporation rate of C545T is controlled at 0.002 nanometer per second, the evaporation rate of LiF is controlled at 0.05 nanometer per second, the evaporation rate of electrode is controlled at 1 nanometer per second.A bright voltage of device is 2.5 volts, and the high-high brightness of device is 32000cd/m
2, be 51cd/m in the brightness of 7.0 volts of voltages
2, the maximum current efficient of device is 14.6cd/A, and maximum power efficiency is 14.4lm/W, and device is 100cd/m at original intensity
2Life-span half-life surpassed 10000 hours.
Embodiment 4:
Earlier the ITO on the ito glass is photo-etched into the electrode of 5 mm wides, 30 millimeters long, cleans then, nitrogen dries up, and uses oxygen plasma treatment 2 minutes.In vacuum degree is 1-5 * 10
-4In the coating system of handkerchief, the MoO of evaporation 5 nanometer thickness successively on the ITO electrode of handling well
3, the NPB hole transmission layer of 150 nanometer thickness, the DCJTB doping Rubrene and the Alq of 37.5 nanometers
3Luminescent layer, the Alq of 37.5 nanometers
3The LiF boundary layer of electron transfer layer and 1 nanometer, last that evaporation and ITO intersect on LiF is wide 5 millimeters, grow 30 millimeters, the metal A l electrode of thickness 200 nanometers, and being prepared into structure is ITO/MoO
3/ NPB/DCJTB:Rubrene:Alq
3/ Alq
3The organic electroluminescence device of/LiF/Al.The effective area of organic electroluminescence device is 25 square millimeters.MoO
3, Rubrene, NPB and Alq
3Evaporation rate be controlled at 0.2 nanometer per second, the evaporation rate of DCJTB is controlled at 0.002 nanometer per second, the evaporation rate of LiF is controlled at 0.05 nanometer per second, the evaporation rate of electrode is controlled at 1 nanometer per second.A bright voltage of device is 2.4 volts, and the high-high brightness of device is 26000cd/m
2, be 2760cd/m in the brightness of 7.0 volts of voltages
2, the maximum current efficient of device is 14.5cd/A, and maximum power efficiency is 18.6lm/W, and device is 100cd/m at original intensity
2Life-span half-life surpassed 10000 hours.
Embodiment 5:
Earlier the ITO on the ito glass is photo-etched into the electrode of 5 mm wides, 30 millimeters long, cleans then, nitrogen dries up, and uses oxygen plasma treatment 2 minutes.In vacuum degree is 1-5 * 10
-4In the coating system of handkerchief, the MoO of evaporation 8 nanometer thickness successively on the ITO electrode of handling well
3, the NPB hole transmission layer of 150 nanometer thickness, the DCJTI doping Rubrene and the Alq of 37.5 nanometers
3Luminescent layer, the Alq of 37.5 nanometers
3The LiF boundary layer of electron transfer layer and 1 nanometer, last that evaporation and ITO intersect on LiF is wide 5 millimeters, grow 30 millimeters, the metal A l electrode of thickness 200 nanometers, and being prepared into structure is ITO/MoO
3/ NPB/DCJTI:Rubrene:Alq
3/ Alq
3The organic electroluminescence device of/LiF/Al.The effective area of organic electroluminescence device is 25 square millimeters.MoO
3, NPB, Rubrene and Alq
3Evaporation rate be controlled at 0.2 nanometer per second, the evaporation rate of DCJTI is controlled at 0.002 nanometer per second, the evaporation rate of LiF is controlled at 0.05 nanometer per second, the evaporation rate of electrode is controlled at 1 nanometer per second.The high-high brightness of device is 45000cd/m
2, be 1050cd/m in the brightness of 7.0 volts of voltages
2, the maximum current efficient of device is 14.2cd/A, maximum power efficiency is 12.1lm/W.At original intensity is 100cd/m
2Life-span half-life of following device has surpassed 12000 hours.
Embodiment 6:
Earlier the ITO on the ito glass is photo-etched into the electrode of 5 mm wides, 30 millimeters long, cleans then, nitrogen dries up, and uses oxygen plasma treatment 2 minutes.In vacuum degree is 1-5 * 10
-4In the coating system of handkerchief, the MoO of evaporation 5 nanometer thickness successively on the ITO electrode of handling well
3, the NPB hole transmission layer of 150 nanometer thickness, the DCM doping Rubrene and the Alq of 37.5 nanometers
3Luminescent layer, the Alq of 37.5 nanometers
3The LiF boundary layer of electron transfer layer and 1 nanometer, last that evaporation and ITO intersect on LiF is wide 5 millimeters, grow 30 millimeters, the metal A l electrode of thickness 200 nanometers, and being prepared into structure is ITO/MoO
3/ NPB/DCM:Rubrene:Alq
3/ Alq
3The organic electroluminescence device of/LiF/Al.The effective area of organic electroluminescence device is 25 square millimeters.MoO
3, NPB, Rubrene and Alq
3Evaporation rate be controlled at 0.2 nanometer per second, the evaporation rate of DCM is controlled at 0.002 nanometer per second, the evaporation rate of LiF is controlled at 0.05 nanometer per second, the evaporation rate of electrode is controlled at 1 nanometer per second.The high-high brightness of device is 46300cd/m
2, be 2103cd/m in the brightness of 7.0 volts of voltages
2, the maximum current efficient of device is 12.1cd/A, maximum power efficiency is 10.7lm/W.At original intensity is 100cd/m
2Life-span half-life of following device has surpassed 15000 hours.
Embodiment 7:
Earlier the ITO on the ito glass is photo-etched into the electrode of 5 mm wides, 30 millimeters long, cleans then, nitrogen dries up, and uses oxygen plasma treatment 2 minutes.In vacuum degree is 1-5 * 10
-4In the coating system of handkerchief, the MoO of evaporation 5 nanometer thickness successively on the ITO electrode of handling well
3, the NPB hole transmission layer of 150 nanometer thickness, the quinacridine doping NPB and the Alq of 37.5 nanometers
3Luminescent layer, the Alq of 37.5 nanometers
3The LiF boundary layer of electron transfer layer and 1 nanometer, last that evaporation and ITO intersect on LiF is wide 5 millimeters, grow 30 millimeters, the metal A l electrode of thickness 200 nanometers, and being prepared into structure is ITO/MoO
3/ NPB/ quinacridine: NPB:Alq
3/ Alq
3The organic electroluminescence device of/LiF/Al.The effective area of organic electroluminescence device is 25 square millimeters.MoO
3, NPB and Alq
3Evaporation rate be controlled at 0.2 nanometer per second, the evaporation rate of quinacridine is controlled at 0.002 nanometer per second, the evaporation rate of LiF is controlled at 0.05 nanometer per second, the evaporation rate of electrode is controlled at 1 nanometer per second.The high-high brightness of device is 48600cd/m
2, be 2153cd/m in the brightness of 7.0 volts of voltages
2, the maximum current efficient of device is 14.1cd/A, maximum power efficiency is 12.7lm/W.At original intensity is 100cd/m
2Life-span half-life of following device has surpassed 21000 hours.
Embodiment 8:
Earlier the ITO on the ito glass is photo-etched into the electrode of 5 mm wides, 30 millimeters long, cleans then, nitrogen dries up, and uses oxygen plasma treatment 2 minutes.In vacuum degree is 1-5 * 10
-4In the coating system of handkerchief, the MoO of evaporation 10 nanometer thickness successively on the ITO electrode of handling well
3, the NPB hole transmission layer of 150 nanometer thickness, the C545T doping NPB and the Alq of 37.5 nanometers
3Luminescent layer, the Alq of 37.5 nanometers
3The LiF boundary layer of electron transfer layer and 1 nanometer, last that evaporation and ITO intersect on LiF is wide 5 millimeters, grow 30 millimeters, the metal A l electrode of thickness 200 nanometers, and being prepared into structure is ITO/MoO
3/ NPB/C545T:NPB:Alq
3/ Alq
3The organic electroluminescence device of/LiF/Al.The effective area of organic electroluminescence device is 25 square millimeters.MoO
3, NPB and Alq
3Evaporation rate be controlled at 0.2 nanometer per second, the evaporation rate of C545T is controlled at 0.002 nanometer per second, the evaporation rate of LiF is controlled at 0.05 nanometer per second, the evaporation rate of electrode is controlled at 1 nanometer per second.The high-high brightness of device is 48300cd/m
2, be 2437cd/m in the brightness of 7.0 volts of voltages
2, the maximum current efficient of device is 13.0cd/A, maximum power efficiency is 9.5 lm/W.At original intensity is 100cd/m
2Life-span half-life of following device has surpassed 25000 hours.
Embodiment 9:
Earlier the ITO on the ito glass is photo-etched into the electrode of 5 mm wides, 30 millimeters long, cleans then, nitrogen dries up, and uses oxygen plasma treatment 2 minutes.In vacuum degree is 1-5 * 10
-4In the coating system of handkerchief, the MoO of evaporation 20 nanometer thickness successively on the ITO electrode of handling well
3, the NPB hole transmission layer of 150 nanometer thickness, the C545T doping NPB and the Alq of 37.5 nanometers
3Luminescent layer, the Alq of 37.5 nanometers
3The LiF boundary layer of electron transfer layer and 1 nanometer, last that evaporation and ITO intersect on LiF is wide 5 millimeters, grow 30 millimeters, the metal A l electrode of thickness 200 nanometers, and being prepared into structure is ITO/MoO
3/ NPB/C545T:NPB:Alq
3/ Alq
3The organic electroluminescence device of/LiF/Al.The effective area of organic electroluminescence device is 25 square millimeters.MoO
3, NPB and Alq
3Evaporation rate be controlled at 0.2 nanometer per second, the evaporation rate of C545T is controlled at 0.002 nanometer per second, the evaporation rate of LiF is controlled at 0.05 nanometer per second, the evaporation rate of electrode is controlled at 1 nanometer per second.The high-high brightness of device is 44000cd/m
2, be 1427cd/m in the brightness of 7.0 volts of voltages
2, the maximum current efficient of device is 11.3cd/A, maximum power efficiency is 10.0lm/W.At original intensity is 100cd/m
2Life-span half-life of following device has surpassed 30000 hours.
Embodiment 10:
Earlier the ITO on the ito glass is photo-etched into the electrode of 5 mm wides, 30 millimeters long, cleans then, nitrogen dries up, and uses oxygen plasma treatment 2 minutes.In vacuum degree is 1-5 * 10
-4In the coating system of handkerchief, the C545T doping NPB and the Alq of the NPB hole transmission layer of the CuPc of evaporation 20 nanometer thickness, 150 nanometer thickness, 37.5 nanometers successively on the ITO electrode of handling well
3Luminescent layer, the Alq of 37.5 nanometers
3The LiF boundary layer of electron transfer layer and 1 nanometer, last that evaporation and ITO intersect on LiF is wide 5 millimeters, grow 30 millimeters, the metal A l electrode of thickness 200 nanometers, and being prepared into structure is ITO/CuPc/NPB/C545T:NPB:Alq
3/ Alq
3The organic electroluminescence device of/LiF/Al.The effective area of organic electroluminescence device is 25 square millimeters.MoO
3, NPB and Alq
3Evaporation rate be controlled at 0.2 nanometer per second, the evaporation rate of C545T is controlled at 0.002 nanometer per second, the evaporation rate of LiF is controlled at 0.05 nanometer per second, the evaporation rate of electrode is controlled at 1 nanometer per second.The high-high brightness of device is 38550cd/m
2, be 3cd/m in the brightness of 7.0 volts of voltages
2, the maximum current efficient of device is 7.3cd/A, maximum power efficiency is 2.0lm/W.At original intensity is 100cd/m
2Life-span half-life of following device has surpassed 500 hours.
Embodiment 11:
Earlier the ITO on the polycarbonate substrate is photo-etched into the electrode of 5 mm wides, 30 millimeters long, cleans then, nitrogen dries up, and uses oxygen plasma treatment 2 minutes.In vacuum degree is 1-5 * 10
-4In the coating system of handkerchief, the MoO of evaporation 20 nanometer thickness successively on the ITO electrode of handling well
3, the NPB hole transmission layer of 150 nanometer thickness, the C545T doping NPB and the Alq of 37.5 nanometers
3Luminescent layer, the Alq of 37.5 nanometers
3The LiF boundary layer of electron transfer layer and 1 nanometer, last that evaporation and ITO intersect on LiF is wide 5 millimeters, grow 30 millimeters, the metal A l electrode of thickness 200 nanometers, and being prepared into structure is ITO/MoO
3/ NPB/C545T:NPB:Alq
3/ Alq
3The organic electroluminescence device of/LiF/Al.The effective area of organic electroluminescence device is 25 square millimeters.MoO
3, NPB and Alq
3Evaporation rate be controlled at 0.2 nanometer per second, the evaporation rate of C545T is controlled at 0.002 nanometer per second, the evaporation rate of LiF is controlled at 0.05 nanometer per second, the evaporation rate of electrode is controlled at 1 nanometer per second.The high-high brightness of device is 35000cd/m
2, be 1232cd/m in the brightness of 7.0 volts of voltages
2, the maximum current efficient of device is 10.0cd/A, maximum power efficiency is 9.0lm/W.
Embodiment 12:
Earlier the ITO on the substrate of glass is photo-etched into the electrode of 5 mm wides, 30 millimeters long, cleans then, nitrogen dries up, and uses oxygen plasma treatment 2 minutes.In vacuum degree is 1-5 * 10
-4In the coating system of handkerchief, the LiO of evaporation 10 nanometer thickness successively on the ITO electrode of handling well
2, the NPB hole transmission layer of 150 nanometer thickness, the C545T doping NPB and the Alq of 37.5 nanometers
3Luminescent layer, the Alq of 37.5 nanometers
3The LiF boundary layer of electron transfer layer and 1 nanometer, last that evaporation and ITO intersect on LiF is wide 5 millimeters, grow 30 millimeters, the metal A l electrode of thickness 200 nanometers, and being prepared into structure is ITO/Li
2O/NPB/C545T:NPB:Alq
3/ Alq
3The organic electroluminescence device of/LiF/Al.The effective area of organic electroluminescence device is 25 square millimeters.Li
2O, NPB and Alq
3Evaporation rate be controlled at 0.2 nanometer per second, the evaporation rate of C545T is controlled at 0.002 nanometer per second, the evaporation rate of LiF is controlled at 0.05 nanometer per second, the evaporation rate of electrode is controlled at 1 nanometer per second.The high-high brightness of device is 21000cd/m
2, be 932cd/m in the brightness of 7.0 volts of voltages
2, the maximum current efficient of device is 9.0cd/A, maximum power efficiency is 7.80lm/W.
Embodiment 13:
Earlier the ITO on the substrate of glass is photo-etched into the electrode of 5 mm wides, 30 millimeters long, cleans then, nitrogen dries up, and uses oxygen plasma treatment 2 minutes.In vacuum degree is 1-5 * 10
-4In the coating system of handkerchief, the C545T doping NPB and the Alq of the NPB hole transmission layer of the MgO of evaporation 10 nanometer thickness, 150 nanometer thickness, 37.5 nanometers successively on the ITO electrode of handling well
3Luminescent layer, the Alq of 37.5 nanometers
3The LiF boundary layer of electron transfer layer and 1 nanometer, last that evaporation and ITO intersect on LiF is wide 5 millimeters, grow 30 millimeters, the metal A l electrode of thickness 200 nanometers, and being prepared into structure is ITO/MgO/NPB/C545T:NPB:Alq
3/ Alq
3The organic electroluminescence device of/LiF/Al.The effective area of organic electroluminescence device is 25 square millimeters.MgO, NPB and Alq
3Evaporation rate be controlled at 0.2 nanometer per second, the evaporation rate of C545T is controlled at 0.002 nanometer per second, the evaporation rate of LiF is controlled at 0.05 nanometer per second, the evaporation rate of electrode is controlled at 1 nanometer per second.The high-high brightness of device is 39500cd/m
2, be 532cd/m in the brightness of 7.0 volts of voltages
2, the maximum current efficient of device is 7.0cd/A, maximum power efficiency is 5.3lm/W.
Embodiment 14:
Earlier the ITO on the substrate of glass is photo-etched into the electrode of 5 mm wides, 30 millimeters long, cleans then, nitrogen dries up, and uses oxygen plasma treatment 2 minutes.In vacuum degree is 1-5 * 10
-4In the coating system of handkerchief, the Ru of evaporation 10 nanometer thickness successively on the ITO electrode of handling well
2O
3, the NPB hole transmission layer of 150 nanometer thickness, the C545T doping NPB and the Alq of 37.5 nanometers
3Luminescent layer, the Alq of 37.5 nanometers
3The LiF boundary layer of electron transfer layer and 1 nanometer, last that evaporation and ITO intersect on LiF is wide 5 millimeters, grow 30 millimeters, the metal A l electrode of thickness 200 nanometers, and being prepared into structure is ITO/Ru
2O
3/ NPB/C545T:NPB:Alq
3/ Alq
3The organic electroluminescence device of/LiF/Al.The effective area of organic electroluminescence device is 25 square millimeters.Ru
2O
3, NPB and Alq
3Evaporation rate be controlled at 0.2 nanometer per second, the evaporation rate of C545T is controlled at 0.002 nanometer per second, the evaporation rate of LiF is controlled at 0.05 nanometer per second, the evaporation rate of electrode is controlled at 1 nanometer per second.The high-high brightness of device is 43000cd/m
2, be 22cd/m in the brightness of 7.0 volts of voltages
2, the maximum current efficient of device is 9.2cd/A, maximum power efficiency is 3.20lm/W.
Embodiment 15:
Earlier the ITO on the substrate of glass is photo-etched into the electrode of 5 mm wides, 30 millimeters long, cleans then, nitrogen dries up, and uses oxygen plasma treatment 2 minutes.In vacuum degree is 1-5 * 10
-4In the coating system of handkerchief, the Eu of evaporation 10 nanometer thickness successively on the ITO electrode of handling well
2O
3, the NPB hole transmission layer of 150 nanometer thickness, the C545T doping NPB and the Alq of 37.5 nanometers
3Luminescent layer, the Alq of 37.5 nanometers
3The LiF boundary layer of electron transfer layer and 1 nanometer, last that evaporation and ITO intersect on LiF is wide 5 millimeters, grow 30 millimeters, the metal A l electrode of thickness 200 nanometers, and being prepared into structure is ITO/Eu
2O
3/ NPB/C545T:NPB:Alq
3/ Alq
3The organic electroluminescence device of/LiF/Al.The effective area of organic electroluminescence device is 25 square millimeters.Eu
2O
3, NPB and Alq
3Evaporation rate be controlled at 0.2 nanometer per second, the evaporation rate of C545T is controlled at 0.002 nanometer per second, the evaporation rate of LiF is controlled at 0.05 nanometer per second, the evaporation rate of electrode is controlled at 1 nanometer per second.The high-high brightness of device is 39200cd/m
2, be 542cd/m in the brightness of 7.0 volts of voltages
2, the maximum current efficient of device is 9.4cd/A, maximum power efficiency is 3.30lm/W.
Embodiment 16:
Earlier the ITO on the substrate of glass is photo-etched into the electrode of 5 mm wides, 30 millimeters long, cleans then, nitrogen dries up, and uses oxygen plasma treatment 2 minutes.In vacuum degree is 1-5 * 10
-4In the coating system of handkerchief, the MoO of evaporation 10 nanometer thickness successively on the ITO electrode of handling well
3, the V of 10 nanometer thickness
2O
5, the NPB hole transmission layer of 150 nanometer thickness, the C545T doping NPB and the Alq of 37.5 nanometers
3Luminescent layer, the Alq of 37.5 nanometers
3The LiF boundary layer of electron transfer layer and 1 nanometer, last that evaporation and ITO intersect on LiF is wide 5 millimeters, grow 30 millimeters, the metal A l electrode of thickness 200 nanometers, and being prepared into structure is ITO/MoO
3/ V
2O
5/ NPB/C545T:NPB:Alq
3/ Alq
3The organic electroluminescence device of/LiF/Al.The effective area of organic electroluminescence device is 25 square millimeters.MoO
3, V
2O
5, NPB and Alq
3Evaporation rate be controlled at 0.2 nanometer per second, the evaporation rate of C545T is controlled at 0.002 nanometer per second, the evaporation rate of LiF is controlled at 0.05 nanometer per second, the evaporation rate of electrode is controlled at 1 nanometer per second.The high-high brightness of device is 48000cd/m
2, be 1082cd/m in the brightness of 7.0 volts of voltages
2, the maximum current efficient of device is 12.2cd/A, maximum power efficiency is 10.20lm/W.
Embodiment 17:
Earlier the ITO on the substrate of glass is photo-etched into the electrode of 5 mm wides, 30 millimeters long, cleans then, nitrogen dries up, and uses oxygen plasma treatment 2 minutes.In vacuum degree is 1-5 * 10
-4In the coating system of handkerchief, the MoO of evaporation 10 nanometer thickness successively on the ITO electrode of handling well
3And V
2O
5Mixture, the NPB hole transmission layer of 150 nanometer thickness, the C545T doping NPB and the Alq of 37.5 nanometers
3Luminescent layer, the Alq of 37.5 nanometers
3The LiF boundary layer of electron transfer layer and 1 nanometer, last that evaporation and ITO intersect on LiF is wide 5 millimeters, grow 30 millimeters, the metal A l electrode of thickness 200 nanometers, and being prepared into structure is ITO/MoO
3: V
2O
5/ NPB/C545T:NPB:Alq
3/ Alq
3The organic electroluminescence device of/LiF/Al.The effective area of organic electroluminescence device is 25 square millimeters.MoO
3, V
2O
5, NPB and Alq
3Evaporation rate be controlled at 0.2 nanometer per second, the evaporation rate of C545T is controlled at 0.002 nanometer per second, the evaporation rate of LiF is controlled at 0.05 nanometer per second, the evaporation rate of electrode is controlled at 1 nanometer per second.MoO
3With
2O
5Percentage by weight be 1: 1, the high-high brightness of device is 48500cd/m
2, be 1132cd/m in the brightness of 7.0 volts of voltages
2, the maximum current efficient of device is 11.4cd/A, maximum power efficiency is 10.40lm/W.
Embodiment 18:
The silver of evaporation 25 nanometers successively on the blank glass of handling well, the MoO of 20 nanometer thickness
3, the NPB hole transmission layer of 150 nanometer thickness, the C545T doping NPB and the Alq of 37.5 nanometers
3Luminescent layer, the Alq of 37.5 nanometers
3The LiF boundary layer of electron transfer layer and 1 nanometer, last that evaporation and ITO intersect on LiF is wide 5 millimeters, grow 30 millimeters, the metal A l electrode of thickness 200 nanometers, and being prepared into structure is Ag/MoO
3/ NPB/C545T:NPB:Alq
3/ Alq
3The organic electroluminescence device of/LiF/Al.The effective area of organic electroluminescence device is 25 square millimeters.MoO
3,, NPB and Alq
3Evaporation rate be controlled at 0.2 nanometer per second, the evaporation rate of C545T is controlled at 0.002 nanometer per second, the evaporation rate of LiF is controlled at 0.05 nanometer per second, the evaporation rate of electrode is controlled at 1 nanometer per second.The high-high brightness of device is 68500cd/m
2, be 1230cd/m in the brightness of 7.0 volts of voltages
2, the maximum current efficient of device is 11.8cd/A, maximum power efficiency is 12.40lm/W.
Embodiment 19:
The samarium of evaporation 25 nanometers successively on the blank glass of handling well, the MoO of 20 nanometer thickness
3, the NPB hole transmission layer of 150 nanometer thickness, the C545T doping NPB and the Alq of 37.5 nanometers
3Luminescent layer, the Alq of 37.5 nanometers
3The LiF boundary layer of electron transfer layer and 1 nanometer, last that evaporation and ITO intersect on LiF is wide 5 millimeters, grow 30 millimeters, the metal A l electrode of thickness 200 nanometers, and being prepared into structure is Sm/MoO
3/ NPB/C545T:NPB:Alq
3/ Alq
3The organic electroluminescence device of/LiF/Al.The effective area of organic electroluminescence device is 25 square millimeters.MoO
3,, NPB and Alq
3Evaporation rate be controlled at 0.2 nanometer per second, the evaporation rate of C545T is controlled at 0.002 nanometer per second, the evaporation rate of LiF is controlled at 0.05 nanometer per second, the evaporation rate of electrode is controlled at 1 nanometer per second.The high-high brightness of device is 36600cd/m
2, be 930cd/m in the brightness of 7.0 volts of voltages
2, the maximum current efficient of device is 9.8cd/A, maximum power efficiency is 8.60lm/W.
Claims (24)
1. organic electroluminescence device, it constitute substrate (1), anode layer (2), hole transmission layer (4), luminescent layer (5), electron transfer layer (6) and cathode layer (7); It is characterized in that between anode layer (2) and hole transmission layer (4), also having metal oxide layer (3); Substrate (1), anode layer (2), metal oxide layer (3), hole transmission layer (4), luminescent layer (5), electron transfer layer (6) and cathode layer (7) are connected in turn.
2. a kind of organic electroluminescence device as claimed in claim 1 is characterized in that described substrate (1) is a kind of in the glass of rigidity or the Merlon flexible substrate;
3. a kind of organic electroluminescence device as claimed in claim 1 is characterized in that anode layer (2) is indium tin oxide ITO.
4. a kind of organic electroluminescence device as claimed in claim 1 is characterized in that anode layer (2) is metal A g, Ni, Pd, Cu, Au, Pt or Sm.
5. a kind of organic electroluminescence device as claimed in claim 1 is characterized in that metal oxide layer (3) is vanadic oxide (V
2O
5), molybdenum trioxide (MoO
3) and tungstic acid (WO
3) in any.
6. a kind of organic electroluminescence device as claimed in claim 1 is characterized in that metal oxide layer (3) is any in the oxide of alkali metal Li, Na, K, Rb, Cs.
7. a kind of organic electroluminescence device as claimed in claim 1 is characterized in that metal oxide layer (3) is any in the oxide of alkaline-earth metal Be, Mg, Ca, Sr, Ba.
8. ask 1 described a kind of organic electroluminescence device as claim, it is characterized in that metal oxide layer (3) is CrO
3, IrO
x, RuO
x, RhO
x, OsO
x, CuO, ZnO, SnO, MnO
3, any among NiO, ReO and the AgO.
9. a kind of organic electroluminescence device as claimed in claim 1 is characterized in that metal oxide layer (3) can be rare-earth oxide CeO
2, Pr
2O
3, Nd
2O
3, Pm
2O
3, Sm
2O
3, Eu
2O
3, Gd
2O
3, Tb
4O
7, Dy
2O
3, Ho
2O
3, Er
2O
3, Tm
2O
3, Yb
2O
3And Lu
2O
3In any.
10, as claim 5,6,7,8 or 9 described any one organic electroluminescence devices, the thickness that it is characterized in that metal oxide layer (3) is the 3-20 nanometer.
11, a kind of organic electroluminescence device as claimed in claim 1 is characterized in that the double-decker that metal oxide layer (3) adopts any one metal oxide in any two kinds of different metal oxides kinds as described below to form:
1. vanadic oxide (V
2O
5), molybdenum trioxide (MoO
3) and tungstic acid (WO
3) in any one;
2. also can adopt any one in the oxide of alkali metal Li, Na, K, Rb and Cs.
3. also can be any one in the oxide of alkaline-earth metal Be, Mg, Ca, Sr and Ba.
4. can be CrO
3, IrO
x, RuO
x, RhO
x, OsO
x, CuO, ZnO, SnO, MnO
3, among NiO, ReO and the AgO any one.
5. can be rare-earth oxide CeO
2, Pr
2O
3, Nd
2O
3, Pm
2O
3, Sm
2O
3, Eu
2O
3, Gd
2O
3, Tb
4O
7, Dy
2O
3, Ho
2O
3, Er
2O
3, Tm
2O
3, Yb
2O
3, Lu
2O
3In any one.
12, a kind of organic electroluminescence device as claimed in claim 11, the thickness that it is characterized in that double-level-metal oxide skin(coating) 3 is in 3 nanometer to 20 nanometers.
13, a kind of organic electroluminescence device as claimed in claim 1 is characterized in that the mixture that metal oxide layer (3) adopts any one the metal oxide codope in any two kinds of different metal oxides kinds as described below to form:
1. vanadic oxide (V
2O
5), molybdenum trioxide (MoO
3) and tungstic acid (WO
3) in any one;
2. can adopt any one in the oxide of alkali metal Li, Na, K, Rb and Cs.
3. can be any one in the oxide of alkaline-earth metal Be, Mg, Ca, Sr and Ba.
4. can be CrO
3, IrO
x, RuO
x, RhO
x, OsO
x, CuO, ZnO, SnO, MnO
3, among NiO, ReO and the AgO any one.
5. can be rare-earth oxide CeO
2, Pr
2O
3, Nd
2O
3, Pm
2O
3, Sm
2O
3, Eu
2O
3, Gd
2O
3, Tb
4O
7, Dy
2O
3, Ho
2O
3, Er
2O
3, Tm
2O
3, Yb
2O
3And Lu
2O
3In any one.
14, a kind of organic electroluminescence device as claimed in claim 13, the thickness that it is characterized in that mixed-metal oxides (3) is in 3 nanometer to 20 nanometers.
15, a kind of organic electroluminescence device as claimed in claim 1 is characterized in that hole transmission layer (4) adopts: N, N '-two (1-naphthyl)-N, N '-diphenyl-1,1 '-diphenyl-4 ,-diamines (being called for short NPB).
16. a kind of organic electroluminescence device as claimed in claim 15, the thickness that it is characterized in that hole transmission layer (4) is the 100-200 nanometer.
17, a kind of organic electroluminescence device as claimed in claim 1, what it is characterized in that luminescent layer (5) employing is the organic mixed material that organic dyestuff mixes, wherein the organic dyestuff of Can Zaing is 5,6,11,12-tetraphenyl-naphthonaphthalene (being called for short rubrene), the 2-{2-tert-butyl group-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydrochysene-1H, 5H-pyrido [3,2,1-ij] quinoline-9-yl)-vinyl]-pyrans-4-inner salt alkene }-malononitrile (being called for short DCJTB), 2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydrochysene-1H, 5H-pyrido [3,2,1-ij] quinoline-9-yl)-vinyl]-pyrans-4-inner salt alkene }-malononitrile (being called for short DCJTI), 4-(dicyano methylene)-2-methyl-6-[is right-(dimethylamino) styryl]-4H-pyrans (being called for short DCM), 10-(2-[4-morpholinodithio base)-2,3,6,7-tetrahydrochysene-1,1,7,7-tetramethyl-1H, 5H, 11H-(1)-benzo give a tongue-lashing the ketone group of muttering-(6,7,8-ij) wherein any one of quinolizine-11-ketone (be called for short C545T) and quinacridine.
Material of main part in the organic mixed material that organic dyestuff mixes is Alq
3Mixture or Alq with NPB
3With in the mixture of Rubrene any.
The organic dyestuff that mixes and the weight ratio of two kinds of material of main parts are controlled between the 1%-5% two kinds of material of main part Alq
3With NPB or Alq
3And the weight ratio of Rubrene is between 1: 1 to 1: 2.
18, a kind of organic electroluminescence device as claimed in claim 17, the thickness that it is characterized in that luminescent layer (5) are between 30 to 50 nanometers.
19, a kind of organic electroluminescence device as claimed in claim 1, what it is characterized in that electron transfer layer (6) employing is: oxine aluminium (being called for short Alq3).
20, a kind of organic electroluminescence device as claimed in claim 19, the thickness that it is characterized in that electron transfer layer (6) are 30 to 50 nanometers.
21, a kind of organic electroluminescence device as claimed in claim 1 is characterized in that the combination electrode that cathode layer (7) adopts metallic aluminium (Al) and boundary layer lithium fluoride (LiF) to form.
22, a kind of organic electroluminescence device as claimed in claim 21 is characterized in that the combination electrode of cathode layer (7), and the thickness of lithium fluoride is 1 nanometer, and the thickness of metallic aluminium is 100 to 500 nanometers.
23, the preparation method of a kind of organic electroluminescence device as claimed in claim 1, it is characterized in that step and condition are as follows: the electrode that earlier the ITO layer (2) on the ito glass substrate (1) is photo-etched into fine strip shape, clean then, nitrogen dries up, after oxygen plasma treatment 2-5 minute, it is transferred in the vacuum coating system, treat that vacuum degree reaches 1-5 * 10
-4During handkerchief, successively on ITO layer (2), evaporation metal oxide skin(coating) (3), hole transmission layer (4), luminescent layer (5), electron transfer layer (6) and cathode layer (7).
24, the preparation method of a kind of organic electroluminescence device as claimed in claim 23 is characterized in that step and condition are as follows:
The electrode that ITO layer (2) on the ito glass substrate (1) is photo-etched into the electrode of fine strip shape and cathode layer (7) intersects to form the luminous zone of device mutually, and area is 25 square millimeters; The thickness of metal oxide layer (3) is the 3-20 nanometer, and the thickness of hole transmission layer (4) is 100 to 200 nanometers, and the thickness of luminescent layer (5) is 30 to 50 nanometers, and the thickness of electron transfer layer (6) is the 30-50 nanometer; The thickness of metal electrode layer (7) is the 100-500 nanometer; NPB, Rubrene and Alq in metal oxide layer (3), hole transmission layer (4), luminescent layer (5) and the electron transfer layer (6)
3Evaporation rate be controlled at 0.2-0.3 nanometer per second, the evaporation rate of dyestuff DCJTB, DCJTI, DCM, C545T and quinacridine is controlled at 0.001-0.005 nanometer per second, the evaporation rate of cathode layer (7) is controlled at the 0.5-5 nm/sec; When luminescent layer (5) mixes, the organic dyestuff that organic mixed material mixes and two kinds of material of main parts while evaporation in different evaporation sources, the weight ratio of the organic dyestuff of doping and two kinds of material of main parts is controlled between the 1%-5%, two kinds of material of main part Alq
3With NPB or Alq
3And the weight ratio of Rubrene is between 1: 1 to 1: 2.
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