CN1851471A - Capictance athermal flow-speed sensor based on micro mechanical technology - Google Patents
Capictance athermal flow-speed sensor based on micro mechanical technology Download PDFInfo
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- CN1851471A CN1851471A CN 200610040600 CN200610040600A CN1851471A CN 1851471 A CN1851471 A CN 1851471A CN 200610040600 CN200610040600 CN 200610040600 CN 200610040600 A CN200610040600 A CN 200610040600A CN 1851471 A CN1851471 A CN 1851471A
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- impeller
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- turntable
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Abstract
The present invented flow-rate detector utilizes MEMS technical processing impeller to proceed detecting velocity of flow, which contains turntable glass chassis, silicon top cover, rotor shaft, turntable, impeller, and capacitor pole plate, wherein glass chassis fixed with rotor shaft, upper part of rotor shaft set with silicon top cover, rotor shaft outer side sleeved with turntable, turntable outer side fixed with impeller, upper surface of glass chassis set with capacitor pole plate. The material of Impeller and rotor shaft is N-type semiconductor silicon, which can be used as both of movable rotating member and one electrode for measuring capacitance. Said flow-rate detector adopts capacitance detection mode with advantages of small power consumption, large linear range, fast response, small temperature drift and reliability.
Description
Technical field
The present invention relates to a kind of micromechanics (MEMS) Athermal flow speed sensor, especially a kind of impeller of the MEMS of utilization technology processing detects the sensor of flow velocity.
Background technology
Fluid measurement all has important use in departments such as industrial and agricultural production, meteorology, environmental protection, national defence, scientific research, aviations, and wherein flow rate is measured as ingredient important in the fluid measurement, has developed a lot of years.Measuring methods such as vane measurement, pitot tube measurement, float measurement, mechanical meaurement, acoustic measurement, optical measurement, thermal conduction study measurement, electromagnetic measurement have successively appearred.It is little to have a volume based on the miniature current velocity sensor of MEMS process technology, and price is low, and the characteristics of good product consistency are the focuses of fluid sensor research in recent years.VanPutten (name) proposed first flow sensor based on silicon micromachining technology in 1974, the principle of work of this sensor is based on thermal conduction study, promptly changes and comes measurement flow rate information by measuring the flow thermal field that causes of fluid.Through the development in surplus 30 years, the hot type microfluid sensor became main flow now, particularly in the wind gage field.But hot type miniflow speed sensors also has its intrinsic shortcoming.For example power consumption heat conduction big, substrate causes measuring error, zero point with environment temperature drift, response time length etc.In addition, because want convection cell heating, so just limited the application of hot type microfluid sensor aspect biological.Non-hot type microfluid sensor then can overcome above-mentioned shortcoming.Method, Oosterbroek (name) that Kersjes (name) has proposed measurement pressure reduction have proposed to measure the method for pressure drop, the method that Svedin (name) proposed to measure lift, the method that Ng (name) proposed to measure viscous force.At present, be exactly that range is little and the linearity is bad based on the common shortcoming of the flow sensor of non-hot type principle.
Summary of the invention
Technical matters: the purpose of this invention is to provide a kind of Capictance athermal flow-speed sensor based on micro mechanical technology, this flow sensor adopts capacitance detecting mode, has that power consumption is little, the range of linearity big, response is fast, temperature is floated little and advantage such as good reliability.
Technical scheme: the present invention is the vane type flow sensor that is used to measure the rate of flow of fluid signal, by impeller, rotating shaft and glass base constitute, impeller and rotating shaft material are the N-type semiconductor silicon of conduction, at the depositing metal electrode on glass of wheel bottom correspondence, the impeller of metal electrode and conduction itself constitutes electric capacity.When fluid acted on impeller, the fluid impeller was rotated, and impeller also rotates with respect to electrode on glass, like this, will make the capacitance size between impeller and the electrode above the glass produce the rule variation.By measuring the frequency that changes, just can obtain the speed of wheel rotation, thereby obtain flow rate information.Promptly utilize the frequency change of electric capacity to measure fluid the rotation that the acting force of impeller causes is obtained flow rate information, its manufacture method is to utilize bonding techniques to form movable rotating disk and impeller.
Beneficial effect: the present invention adopts the manufacturing of MEMS process technology, and method for making and structure are all comparatively simple, good reliability.Traditional heat type fluid sensor is by heater block is set, and allows the fluid heater block of flowing through again, measures the variation of thermal field or the temperature variation of heater block and obtains flow rate information.Owing to want the convection cell heating, power consumption is big, temperature effect is obvious.The present invention adopts mechanics principle to measure, and obtains flow rate information by the rotating speed of measuring the rotation of fluid impeller.Thereby avoided this defective.Traditional Athermal flow speed sensor utilizes the bernoulli principle to measure pressure reduction or pressure drop mostly, and the range of linearity is less.The present invention is provided with impeller and solves this problem, by detecting the variation of wheel rotation speed, can obtain flow rate information.Because impeller is linear with the variation of flow velocity, so the present invention can solve the little problem of the range of linearity.The employing capacitance type structure detects, and temperature drift is little, and is highly sensitive, and antijamming capability is strong.Simultaneously, detection be the frequency size of capacitance variations rather than the order of magnitude of capacitance variations, so further improved sensitivity and antijamming capability.SOI (silicon-on-insulator) silicon chip that utilizes bonding to form is used as structured material, discharges by ICP (plasma enhancing etching) and sacrifice layer to form impeller and pivot structure, and then finishes fixing rotating shaft and glass bonding and lead-in wire.And generally adopt first deposit LTO (low temperature silicon dioxide) or PSG (silicon dioxide of phosphorus doping) in the traditional handicraft as sacrifice layer, releasing sacrificial layer forms the gap between the impeller then, this tends to cause structure cohesion or the out-of-flatness that is released, make component failure, the present invention adopts the soi wafer technology will overcome this defective, has strengthened the reliability of sensor greatly.
Description of drawings
Fig. 1 is a structural representation of the present invention,
Fig. 2 is the sectional view of the present invention along the A-A direction,
Have among the above figure: glass chassis 1, silicon top cover 2, rotating shaft 3, rotating disk 4, impeller 5, capacitor plate 6.
Embodiment
The present invention is a kind of sensor of measuring the flow velocity of rate of flow of fluid with blade wheel structure.By glass chassis 1, silicon top cover 2, rotating shaft 3, rotating disk 4, impeller 5 and capacitor plate 6 and lead-in wire are formed.Rotating shaft 3 is to link together by bonding technology and chassis and top cover.The material of rotating shaft 3, impeller 5 and rotating disk 4 is the N-type semiconductor silicon of conduction, obtains by two-sided three corrosion, and the glass surface depositing metal pole plate 6 of correspondence below each impeller 5, impeller 5 itself conducts electricity, and becomes another piece pole plate.Constitute electric capacity between the impeller 5 of conduction and the metal polar plate 6.Impeller 5 relies on 1 lead-in wire from the glass chassis that contacts of rotating disk 4 and rotating shaft 3.When fluid is flowed through impeller 5, can impeller 5 rotations.Make the overlapping area of impeller 5 and glass chassis 1 upper metal pole plate 6 that size variation clocklike take place.The frequency and the flow velocity that change are directly proportional.So,, just can obtain the information of flow velocity by measuring electric capacity by greatly changing to minimum frequency.
The manufacturing process of this ratio sensor is: prepare N-type semiconductor silicon chip 1# and 2#; Oxidation 1# and 2# and bonding form soi wafer; Etching 1# forms the step of rotating disk 4; Etching 1# forms the step of impeller 5; ICP etching 1# forms rotating shaft 3, rotating disk 4 and impeller 5; Glass 1 splash-proofing sputtering metal forms capacitor plate 6 and lead-in wire; Glass and N-type semiconductor silicon chip 1# bonding; Corrosion of silicon 2# forms top cover; Sacrifice layer discharges and forms rotating impeller 5 and rotating disk 4.
Claims (3)
1. the Capictance athermal flow-speed sensor based on micro mechanical technology is characterized in that this sensor by glass chassis (1), silicon top cover (2), and rotating shaft (3), rotating disk (4), impeller (5), capacitor plate (6) are formed; On glass chassis (1), be fixed with rotating shaft (3), be provided with silicon top cover (2) on the top of rotating shaft (3), be with rotating disk (4) in the outside of rotating shaft (3), be fixed with impeller (5) in the outside of rotating disk (4), the upper surface in glass chassis (1) is provided with capacitor plate (6).
2. the Capictance athermal flow-speed sensor based on micro mechanical technology according to claim 1 is characterized in that impeller (5) and rotating shaft (3) material are N-type semiconductor silicon.Promptly as movable rotary part, also as an electrode measuring electric capacity.
3. the Capictance athermal flow-speed sensor based on micro mechanical technology according to claim 1 and 2 is characterized in that adopting bonding method to form movable rotating disk (4) and impeller (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100406006A CN100403032C (en) | 2006-05-29 | 2006-05-29 | Capictance athermal flow-speed sensor based on micro mechanical technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100406006A CN100403032C (en) | 2006-05-29 | 2006-05-29 | Capictance athermal flow-speed sensor based on micro mechanical technology |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1851471A true CN1851471A (en) | 2006-10-25 |
| CN100403032C CN100403032C (en) | 2008-07-16 |
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| CNB2006100406006A Expired - Fee Related CN100403032C (en) | 2006-05-29 | 2006-05-29 | Capictance athermal flow-speed sensor based on micro mechanical technology |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106093460A (en) * | 2016-08-11 | 2016-11-09 | 珠海格力电器股份有限公司 | A kind of flow rate measuring device |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN85202918U (en) * | 1985-07-08 | 1986-07-09 | 湖南大学 | Sensor for measuring the flow of conductive liquid |
| JP3182238B2 (en) * | 1991-12-10 | 2001-07-03 | キヤノン株式会社 | Speed sensor and semiconductor exposure apparatus using the same |
| GB9424230D0 (en) * | 1994-11-30 | 1995-01-18 | Waymade Plc | Peak flow meter |
| US5959219A (en) * | 1997-07-28 | 1999-09-28 | Saunders; David N. | Capacitive gas flow sensor |
| CN2519280Y (en) * | 2002-01-31 | 2002-10-30 | 刘生 | Water flow measuring instrument |
| JP2005257273A (en) * | 2004-03-09 | 2005-09-22 | Ricoh Elemex Corp | Electronic flowmeter |
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2006
- 2006-05-29 CN CNB2006100406006A patent/CN100403032C/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106093460A (en) * | 2016-08-11 | 2016-11-09 | 珠海格力电器股份有限公司 | A kind of flow rate measuring device |
| CN106093460B (en) * | 2016-08-11 | 2022-04-26 | 珠海格力电器股份有限公司 | Flow velocity measuring device |
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| Publication number | Publication date |
|---|---|
| CN100403032C (en) | 2008-07-16 |
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Granted publication date: 20080716 Termination date: 20120529 |