CN1850363A - Washing apparatus for removing polymer after etching and washing method - Google Patents
Washing apparatus for removing polymer after etching and washing method Download PDFInfo
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- CN1850363A CN1850363A CN 200510126305 CN200510126305A CN1850363A CN 1850363 A CN1850363 A CN 1850363A CN 200510126305 CN200510126305 CN 200510126305 CN 200510126305 A CN200510126305 A CN 200510126305A CN 1850363 A CN1850363 A CN 1850363A
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- cleaning device
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Abstract
The present invention relates to a wafer cleaning device for removing residual polymer remained after the wafer is etched. Said wafer cleaning device includes the following several portions: bottom plate, protection frame set along periphery of said bottom plate and handle set on the protection frame. On the described bottom plate several leakage holes are uniformly distributed. Besides, said invention also provides its cleaning method and concrete steps.
Description
Technical field
The present invention relates to a kind of cleaning device, the monolithic cleaning device of polymer after particularly a kind of removal etching simple in structure; The invention still further relates to a kind of cleaning method that uses this cleaning device.
Background technology
The gas that etching process is used has HBr, Cl
2, CF
4Deng corrosive gas, then after etching process, reach the polymer of the residual some of meeting on every side in the etching pattern side wall, as depicted in figs. 1 and 2.The main cause that these polymer form is: combined by the carbon of separating in the photoresistance (photoresist) and etching agent (fluorine-containing, chlorine, bromo element gas) and etching product (as bromide, chloride etc.), the fluorine carbon polymeric chain compound that formation is difficult to remove, and cover pattern side wall and bottom.Remaining in sidewall or polymer on every side must be removed through the method for Chemical cleaning or the method for other plasma clean, otherwise they become the pollution sources of next step technology and may cause the short circuit of device or open circuit, and influence device yield and reliability.
At present the cleaning method that generally uses of institute is the slot type wet-cleaning: finish the back at etching technics silicon chip is carried out wet-cleaning, with the polymer of removal silicon chip surface.A this method silicon box (Cassette) (25) silicon chip of once packing into, and cleaning fluid need soak whole cassette and just can clean, required cleaning fluid is more.Cassette is put into the rinse bath that different cleaning agents are housed soak in turn, after ultra-clean water spray is adopted in each immersion back, enter next rinse bath, adopt nitrogen to dry up at last or heating, drying.Typical process is: the concentrated sulfuric acid (120 ℃) → washing → ammoniacal liquor+hydrogen peroxide → washing → hydrofluoric acid → wash → dry up/dry.This cleaning method shortcoming have: 1. cleaning procedure complexity, often, cleaning agent, ultra-clean water consumption are big, the cost height; 2. this cleaning method is suitable for the operation of production line procedural style, and for technique research and development some burden.
In addition, also useful silicon wafer cleaner carries out cleaning for million, and this method is after etching technics finishes, and adopts the single silicon chip cleaning machine that the polymer that etching process produces is cleaned.Vacuum is adsorbed on silicon chip can carry out the setting of different rotating speeds and spray time, finishes the multistep cleaning step continuously.Typical process is: million → ammoniacal liquor+hydrogen peroxide (can heat) → washing → hydrochloric acid+hydrogen peroxide → washing → million → dry.The shortcoming of this kind cleaning method is: 1. the cost of equipment own is higher; 2. cleaning agent, ultra-clean water consumption are big, clean the cost height; 3. it is relatively poor not have heating function (can't arrive 120 ℃ of high temperature) cleaning cleaning polyalcohol effect.
Summary of the invention
(1) technical problem that will solve
One object of the present invention is to provide the needs in a kind of suitable technique research and development stage at above-mentioned the deficiencies in the prior art, and the monolithic cleaning device of polymer after simple in structure, the easy to operate removal etching;
Another object of the present invention is to provide a kind of cleaning method that uses device of the present invention.
(2) technical scheme
For achieving the above object, the present invention adopts following technical scheme:
The present invention removes the monolithic cleaning device of polymer after the etching, comprising base plate be arranged on protecting frame and being arranged on the handle that protects on the frame around the base plate, is evenly distributed with some weepage holes on the described base plate.
The wherein said frame inboard of protecting is provided with and is used for spacing some silicon chip holddown grooves.
Wherein said weepage holes is ellipse, circle, triangle, square or strip.
Cleaning method of the present invention comprises the steps:
A, with silicon slice placed to be cleaned on base plate;
B, with cleaning device put into the band heating apparatus dense H
2SO
4Clean in the rinse bath;
C, will be clean with purified rinse water through the silicon chip that step B handles;
D, will put into the HF rinse bath through the silicon chip that step C handles and clean;
E, will be clean with purified rinse water through the silicon chip that step D handles, oven dry gets final product.
H among the wherein said step B in the rinse bath
2SO
4With the ratio of water be 4: 1, temperature is 120 degree in the rinse bath.
The ratio of HF and water is 1: 100 among the wherein said step D.
Wherein in each cleaning step, also comprise jolting cleaning device step.
(3) beneficial effect
The advantage and the good effect of the monolithic cleaning device of polymer are after the removal etching of the present invention: device of the present invention includes only base plate, protects frame and handle, so simple in structure, correspondingly with low cost, simple, convenient.
Use cleaning method of the present invention, needed cleaning fluid is less, has saved cost greatly, and is significant for the technique research and development stage.
Description of drawings
Fig. 1 is the polymer that remains in pattern side wall after the etching;
Fig. 2 remains in figure polymer on every side after the etching;
Fig. 3 is the structural representation that the present invention removes the monolithic cleaning device of polymer after the etching.
Among the figure: 1. base plate; 2. protect frame; 3. silicon chip holddown groove; 4. handle; 5. weepage holes.
The specific embodiment
Below in conjunction with accompanying drawing, further describe the specific embodiment that the present invention removes the monolithic cleaning device of polymer after the etching, but be not used for limiting protection scope of the present invention.
Referring to Fig. 1.The monolithic cleaning device of polymer after the removal etching of the present invention, the monolithic cleaning device of polymer after the removal etching, comprise base plate 1, be arranged on protecting frame and being arranged on the handle 4 that protects on the frame 2 around the base plate 1, protect frame 2 inboards and be provided with and be used for spacing some silicon chip holddown grooves 3.Be evenly distributed with some oval-shaped weepage holes 5 on the described base plate 1.Weepage holes 5 can also be other shapes such as circle, triangle, square or strip.In the monolithic cleaning device of polymer, the design of base plate 1 hollow out and the silicon chip holddown groove of side can carry out motion up and down when cleaning, thereby make cleaning performance better after the removal etching of the present invention.
Cleaning method of the present invention comprises the steps:
A on base plate 1, and inserts silicon slice placed to be cleaned in the silicon chip holddown groove 3;
B puts into cleaning device the dense H of band heating apparatus
2SO
4Clean in the rinse bath, wherein H
2SO
4With the ratio of water be 4: 1, temperature is 120 degree in the rinse bath.
C will be clean with purified rinse water through the silicon chip that step B handles;
D will put into the HF rinse bath through the silicon chip that step C handles and clean, and wherein the ratio of HF and water is 1: 100.
E will be clean with purified rinse water through the silicon chip that step D handles, and oven dry gets final product.
Can upper and lower vibration or the left and right cleaning device that shakes in each above-mentioned cleaning step, so as to clean more thorough.
More than be preferred forms of the present invention, according to content disclosed by the invention, some identical, replacement schemes that those of ordinary skill in the art can expect apparently all should fall into the scope of protection of the invention.
Claims (8)
1. the monolithic cleaning device of polymer after the removal etching is characterized in that comprising base plate (1) and is arranged on base plate (1) protecting frame (2) and being arranged on the handle (4) that protects on the frame (2) on every side, is evenly distributed with some weepage holes (5) on the described base plate (1).
2. the monolithic cleaning device of polymer after the removal etching according to claim 1 is characterized in that described frame (2) inboard of protecting is provided with and is used for spacing some silicon chip holddown grooves (3).
3. the monolithic cleaning device of polymer after the removal etching according to claim 1 is characterized in that described weepage holes (5) is ellipse, circle, triangle, square or strip.
4. a cleaning method that uses monolithic cleaning device as claimed in claim 1 is characterized in that comprising the steps:
A, with silicon slice placed to be cleaned on base plate (1);
B, with cleaning device put into the band heating apparatus dense H
2SO
4Clean in the rinse bath;
C, will be clean with purified rinse water through the silicon chip that step B handles;
D, will put into the HF rinse bath through the silicon chip that step C handles and clean;
E, will be clean with purified rinse water through the silicon chip that step D handles, oven dry gets final product.
5. monolithic cleaning method according to claim 4 is characterized in that the H in the rinse bath among the described step B
2SO
4With the ratio of water be 4: 1.
6. monolithic cleaning method according to claim 4 is characterized in that the interior temperature of rinse bath is 120 degree among the described step B.
7. monolithic cleaning method according to claim 4 is characterized in that the ratio of HF and water is 1: 100 among the described step D.
8. monolithic cleaning method according to claim 4 is characterized in that also comprising jolting cleaning device step in each cleaning step.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101263058A CN100525939C (en) | 2005-12-05 | 2005-12-05 | Washing apparatus for removing polymer after etching and washing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101263058A CN100525939C (en) | 2005-12-05 | 2005-12-05 | Washing apparatus for removing polymer after etching and washing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1850363A true CN1850363A (en) | 2006-10-25 |
| CN100525939C CN100525939C (en) | 2009-08-12 |
Family
ID=37131874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005101263058A Active CN100525939C (en) | 2005-12-05 | 2005-12-05 | Washing apparatus for removing polymer after etching and washing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100525939C (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569085A (en) * | 2010-12-29 | 2012-07-11 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing metal oxide semiconductor (MOS) tube |
| CN103008281A (en) * | 2011-09-20 | 2013-04-03 | 宜兴市环洲微电子有限公司 | Cleaning tank used for cleaning semiconductor wafers |
| CN103480602A (en) * | 2013-09-02 | 2014-01-01 | 胡必胜 | Washing and stirring wheel for cleaning plastic fragments |
| CN103785640A (en) * | 2012-10-31 | 2014-05-14 | 浙江昱辉阳光能源有限公司 | Cleaning method of quasi monocrystalline silicon |
-
2005
- 2005-12-05 CN CNB2005101263058A patent/CN100525939C/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569085A (en) * | 2010-12-29 | 2012-07-11 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing metal oxide semiconductor (MOS) tube |
| CN103008281A (en) * | 2011-09-20 | 2013-04-03 | 宜兴市环洲微电子有限公司 | Cleaning tank used for cleaning semiconductor wafers |
| CN103785640A (en) * | 2012-10-31 | 2014-05-14 | 浙江昱辉阳光能源有限公司 | Cleaning method of quasi monocrystalline silicon |
| CN103785640B (en) * | 2012-10-31 | 2016-07-06 | 浙江昱辉阳光能源有限公司 | A kind of cleaning method of quasi-monocrystalline silicon |
| CN103480602A (en) * | 2013-09-02 | 2014-01-01 | 胡必胜 | Washing and stirring wheel for cleaning plastic fragments |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100525939C (en) | 2009-08-12 |
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Address after: No. 8, Wenchang Avenue, Beijing economic and Technological Development Zone, 100176 Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016 Jiuxianqiao East Road, Chaoyang District, Chaoyang District, Beijing Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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