CN1845312A - Air-blowing type wafer heat radiation device and its device making method - Google Patents

Abstract

The air-blow wafer cooling device comprises an air-flow producing device, some cooling fins, a radiating fin, and a thermal conductive pipe. Wherein, the radiating fin is made by heat-conducting material included metal material and backbone-structure carbon with high thermal conductive coefficient, and can be prepared by CVD, PVD, electroplating or other method. This invention can decrease the hot temperature introduced by waste heat greatly for wide application.

Description

Air-blowing type wafer heat abstractor and device manufacture method thereof

Technical field

The invention relates to a kind of air-blowing type wafer heat abstractor and device manufacture method thereof, particularly comprise the manufacture method of the carbon of a metal and a shape structure about a kind of Heat Conduction Material.

Background technology

Recently along with the fast development of high-tech industry, electronic component is towards the little and highly dense intensity development of volume, and its required usefulness is more and more higher, follows the generation of many used heat relatively.If when used heat can't be got rid of, will reduce the usefulness of electronic component, even cause damage in good time.Given this, Heat Conduction Material miscellaneous just arises at the historic moment, in the hope of reaching the purpose that promotes radiating efficiency.

From prior art, the material that is applied to radiator structure is the main flow of current heat dissipation technology with copper or aluminium matter usually.But the conventional aluminum heat exchanging material is subject to the high temperature conduction that the quick evolution of central processing unit produces and meets with bottleneck, thereby the generation of copper material heat dissipation technology is arranged.But this material makes application limited than great, unfavorable shaping, and above-mentioned two kinds of materials are to be used for cooling air mode enforcement heat radiation, when the wafer caloric value arrives 50W/cm ²The time, this type of cooling will be difficult to satisfy radiating requirements with above-mentioned copper, aluminum, thereby need more efficient heat sink material.At this, earlier the structure description of general heat radiator of electronic element in after.

See also heat radiator of electronic element schematic diagram as one of Fig. 1, it is according to embodiment one of in the prior art, comprises a fin 11, a heat radiation paster 12, a heat pipe 13, an air flow-producing device 14 and a plurality of radiating fin 15.This fin 11 is learnt from prior art and is the copper material, these fin 11 lower surfaces 111 can attach a heat radiation paster 12, this heat radiation paster 12 generally is for the aluminum material in the prior art and is used to bind plane 161 and fin 11 lower surfaces 111 on the wafer 16, caused the used heat of high temperature during with the running of conduction wafer.Utilize this heat radiation paster 12 that used heat is passed to above-mentioned these fin 11 lower surfaces 111, used heat is conducted to one of these fin 11 upper surfaces 112 heat pipe 13 heat source side 131 again, this heat pipe 13 learns it is to be red metal saw lumber matter from prior art.This heat pipe 13 is to be linked to a plurality of radiating fins 15 with respect to the radiating end 132 of heat source side 131, and used heat conducted on these a plurality of radiating fins 15, these a plurality of radiating fins 15 are learnt via prior art and are for the copper material and are the final place of used heat conduction.Therefore, these a plurality of radiating fins 15 can be in conjunction with an air flow-producing device 14, this air flow-producing device 14 is to be a fan, running by this air flow-producing device 14 produces air-flow and brings in these a plurality of radiating fins 15, conducts to the high temperature that the used heat of these a plurality of radiating fins 15 causes with reduction.Discharge used heat by above-mentioned heat abstractor and reach the radiating and cooling effect, this is the heat radiation operational mode of general heat radiator of electronic element.

In addition, well-known diamond has characteristics such as hardness is the highest in existing known materials, heat transfer is the fastest, the anaclasis scope is wide, for a long time because of the diamond superior characteristic, so be one of material important on the engineering always.Simultaneously, its conductive coefficient is five times of copper at normal temperatures, and the thermal coefficient of expansion owing to diamond when high temperature is little.Therefore, its heat dissipation more can manifest when high temperature.And the good more general common people of characteristic of this heat radiation of diamond are used to judge the true and false of diamond.And in the prior art, developed and many different technology and processing procedure, the method of wherein utilizing hydrocarbon directly to decompose is the most common, as microwave electricity pulp vapour deposition process (Microwave Plasma enhanceChemical Vapor Deposition, MPCVD), hot filament chemical vapour deposition technique (HotFilament CVD, HFCVD), can be coated with the polycrystalline diamond film, the characteristic of its polycrystalline diamond film is also possessed and the identical characteristic of natural monocrystalline diamond.

Summary of the invention

Because get rid of the problem that efficient is promoted that goes up for the used heat of electronic component in the above-mentioned prior art, for also desiring to promote to some extent in response to electronic component trend small size, high collection density, dynamical development, the present invention provides a kind of air-blowing type wafer heat abstractor and device manufacture method thereof then, Heat Conduction Material of the present invention is applied to the heat radiation of wafer, significantly to reduce the high temperature that the used heat that produced because of wafer running causes and to promote radiating efficiency.In addition, Heat Conduction Material provided by the present invention does not limit the usefulness that is used in the chip element heat radiation, also can comprise to be applied to other relevant heat conduction or radiating element devices.

The object of the present invention is achieved like this: a kind of air-blowing type wafer heat abstractor, be applicable to the usefulness of a wafer heat radiation, and feature is that described wafer heat abstractor comprises: an air flow-producing device has gas outlet; Several radiating fins respectively have a base, are formed on the bottom surface and described several radiating fins and described bottom surface form the corresponding described gas outlet that enters the mouth of at least one gas; One fin is arranged on the plane of described wafer and described fin can form a Heat Conduction Material in conjunction with the carbon of a metal and a shape structure; And a heat pipe, be located between described radiating fin and the described fin.Heat Conduction Material is the carbon that comprises in conjunction with a metal and a shape structure, and this metal is metals copper or aluminium matter or other high thermal conductivity coefficients.In addition, the carbon of this shape structure is a diamond.

In addition, the object of the present invention is achieved like this: a kind of air-blowing type wafer heat abstractor manufacture method, be applicable to the usefulness of a wafer heat radiation, feature is that described wafer heat abstractor manufacture method comprises: an air flow-producing device is provided, and forms gas outlet on described air flow-producing device; Be provided with on several radiating fin to one bottom surfaces, and described several radiating fins and described bottom surface form the corresponding described gas outlet that enters the mouth of at least one gas; Utilize a processing procedure mode to produce a Heat Conduction Material of carbon with a metal and a shape structure; Utilize described Heat Conduction Material to form a fin; Described fin is set on a plane of described wafer; And a heat pipe is set between described radiating fin and described fin.The carbon of described shape structure also be used for clad metal surface or mix material or above-mentioned both comprise simultaneously.

Effect of the present invention:

Air-blowing type wafer heat abstractor of the present invention and the Heat Conduction Material of device in the manufacture method thereof are applied to the heat radiation of wafer, significantly to reduce the high temperature that the used heat that produced because of the wafer running causes and to promote radiating efficiency.In addition, Heat Conduction Material provided by the present invention does not limit the usefulness that is used in the chip element heat radiation, also can comprise to be applied to other relevant heat conduction or radiating element devices.

For further specifying above-mentioned purpose of the present invention, design feature and effect, the present invention is described in detail below with reference to accompanying drawing.

Description of drawings

Fig. 1 is general heat radiator of electronic element schematic diagram of the prior art;

Fig. 2 is in conjunction with the formed fin schematic diagram of Heat Conduction Material of the carbon of a metal and a shape structure in one embodiment of the invention air-blowing type wafer heat abstractor;

Fig. 3 is the heat pipe schematic diagram for Fig. 1 in the prior art;

Fig. 4 is several radiating fin schematic diagrames for Fig. 1 in the prior art;

Fig. 5 is the air flow-producing device schematic diagram for Fig. 1 in the prior art;

Fig. 6 is the microwave plasma enhanced chemical vapor deposition schematic diagram of one embodiment of the invention; And

Fig. 7 is the ion beam sputter schematic diagram of one embodiment of the invention.

The symbol description of main element in the accompanying drawing;

1: general heat radiator of electronic element schematic diagram; 11,21: fin;

111,211: lower surface; 112,212: upper surface;

12: the heat radiation paster; 13: heat pipe;

131: heat source side; 132: radiating end;

14: air flow-producing device; 15: several radiating fins;

16: wafer; 161: go up the plane;

2: the fin schematic diagram of air-blowing type wafer heat abstractor;

3: the heat pipe schematic diagram; 131: heat source side;

132: radiating end; 4: several radiating fin schematic diagrames;

151: the bottom surface; 152: end face;

153: the gas inlet; 154: the gas outlet;

5: the air flow-producing device schematic diagram; 141: air intake;

142: the gas outlet; 143: a plurality of fan blade;

6: microwave plasma enhanced chemical vapor deposition schematic diagram; 61: gas input port;

62: microwave produces system; 63: outlet port;

64: bracing frame; 65: metal material;

66: gas reaction chamber; 7: ion beam sputter schematic diagram;

71: the first ion guns; 72: target;

73: the second ion guns; 74: metal material; And

75: outlet port.

Embodiment

See also Fig. 2, among the figure, be meant the fin schematic diagram of an air-blowing type wafer heat abstractor.It is a kind of air-blowing type wafer heat abstractor according to one embodiment of the invention, this device radiation function mode as described in the prior art, the Heat Conduction Material of the carbon in conjunction with a metal and a shape structure wherein of the present invention is as the material of making fin 21.Among the lower surface 211 of this fin 21 and Fig. 1 on the wafer 16 of indication plane 161 bind and the tool annexation by heat radiation paster 12, and correspond to fin 21 lower surfaces 211 and have a upper surface 212.This heat conduction response procedures is: the lower surface 211 of fin 21 by with wafer 16 on the annexation on plane 161, the intensification that these wafer 16 runnings are caused is generated heat, conduct on the formed fin 21 of above-mentioned carbon, with the used heat of absorption by these wafer 16 high temperature that running is caused in conjunction with a metal and a shape structure.Wherein, the carbon of this shape structure can be diamond, and this metal can be the high metal of aluminium alloy or copper or other coefficients of heat conduction or its metal material that mutually combines.Described plane 16 is the cappings for described wafer, and described plane 16 is the bottom surfaces for described wafer.

Continue to see also Fig. 3, this figure is for as the heat pipe schematic diagram among Fig. 1, and this heat pipe 13 has a heat source side 131, and is connected as formed fin 21 upper surfaces 212 of the Heat Conduction Material of the carbon that combines a metal and a shape structure among Fig. 2.Simultaneously have a corresponding radiating end 132 with respect to a heat source side 131, several radiating fins 15 among utilization and Fig. 1 produce annexations.Simultaneously, will utilize Fig. 2 to make the used heat of high temperature reach this heat pipe 13 in conjunction with formed fin 21 conduction of the carbon of a metal and a shape structure.

Continue to see also Fig. 4, this figure is the schematic diagram for several radiating fins.Wherein, these several radiating fins 15 form a bottom surface 151 in the base, and then a radiating end 132 of the heat pipe 13 among this bottom surface 151 and Fig. 3 is connected, and forms so-called annexation.Simultaneously, correspond to bottom surface 151, have an end face 152 to be formed at a top margin on several radiating fin 15 corresponding bases.Therefore, satisfy the gas channel that constitutes gas inlet 153 and one gas outlet 154 by several radiating fins 15, bottom surface 151 and end face 152, for the used heat of heat pipe 13 several radiating fins 15 that conduct to of Fig. 3, utilize in the gas channel air current flow to get rid of this used heat.

Continue to see also Fig. 5, this figure is an air flow-producing device 14 schematic diagrames.This air flow-producing device is a fan structure and has an air intake 141, a gas outlet 142 and several fan blade 143, entered by air intake 141 direct air and 142 flows out fan structures and form an air-flow from the gas outlet through the running of several fan blade 143.This air flow-producing device 14 is satisfied in conjunction with several radiating fins 15 among above-mentioned Fig. 4 makes air-flow further flow into this gas inlet 153.Cause air-flow by these air flow-producing device 14 runnings, utilization is passed to the gas inlet 153 of these several radiating fins 15 by this gas outlet 142, conduct to the used heat of these several radiating fins 15 with further eliminating, used heat is discharged in gas outlet 154 by these several radiating fins 15, reaches complete heat radiation execution mode with this.

The carbon of the shape structure that in addition, this Heat Conduction Material comprised is to utilize chemical vapour deposition (CVD) or physical vapour deposition (PVD) to be formed at a metal surface.So see also Fig. 6, microwave plasma enhanced chemical vapor deposition schematic diagram, it is the radiator structure manufacture method according to one embodiment of the invention.In this embodiment, its response procedures is that the mist that desire is reacted enters to gas reaction chamber 66 by gas input port 61.Simultaneously, microwave produces system's 62 generation microwaves reacts the active reactive ion of mist generation, and is adsorbed in the surface formation diamond film of the metal material 65 on the bracing frame 64 gradually.This metal material 65 can be the high metal of copper or aluminium or silver or other coefficients of heat conduction or it is in conjunction with material, residual gas then discharges via outlet port 63, Heat Conduction Material with this response procedures and then acquisition surface coverage diamond is the described fin 21 of Fig. 2.

Simultaneously, the radiator structure manufacture method of another embodiment of the present invention sees also Fig. 7 ion beam sputter schematic diagram.In this embodiment, its preparation procedure is to suppress a target 72 with diamond material earlier, it is put about about 45 degree of ion beam exit direction angle of the angle and first ion gun 71, make the diamond particles flight of splashing to second ion gun, 73 the place aheads by 71 slap shot of first ion gun, give the enough kinetic energy of diamond particles via second ion gun 73 again and go up the uniform diamond film of formation to be sputtered to metal material 74 surfaces, remaining diamond particles is then discharged via outlet port 75.Therefore, the Heat Conduction Material that obtains the surface coverage diamond by above-mentioned preparation procedure forms fin 21 as described in Figure 2.

In addition, except that the preparation method of the chemical vapour deposition (CVD) of the foregoing description and physical vapour deposition (PVD), still can the other materials preparation method as plating, fusion etc., obtain to comprise the Heat Conduction Material of the carbon of a metal and a shape structure.

Those of ordinary skill in the art will be appreciated that, above embodiment is used for illustrating the present invention, and be not to be used as limitation of the invention, as long as in connotation scope of the present invention, all will drop in the scope of claims of the present invention variation, the modification of the above embodiment.

Claims (26)

1, a kind of air-blowing type wafer heat abstractor is applicable to the usefulness of a wafer heat radiation to it is characterized in that described wafer heat abstractor comprises:

One air flow-producing device has gas outlet;

Several radiating fins respectively have a base, are formed on the bottom surface and described several radiating fins and described bottom surface form the corresponding described gas outlet that enters the mouth of at least one gas;

One fin is arranged on the plane of described wafer and described fin can form a Heat Conduction Material in conjunction with the carbon of a metal and a shape structure; And

One heat pipe is located between described radiating fin and the described fin.

2, air-blowing type wafer heat abstractor as claimed in claim 1 is characterized in that described air flow-producing device is to be a fan.

3, air-blowing type wafer heat abstractor as claimed in claim 1 is characterized in that described radiating fin also has a top margin on corresponding described base, is to be formed under the end face of a corresponding described bottom surface.

4, air-blowing type wafer heat abstractor as claimed in claim 1, the plane that it is characterized in that described wafer are the cappings for described wafer.

5, as claim 1 a described air-blowing type wafer heat abstractor, the described plane that it is characterized in that described wafer is the bottom surface for described wafer.

6, air-blowing type wafer heat abstractor as claimed in claim 1 is characterized in that described metal is to be a copper material.

7, air-blowing type wafer heat abstractor as claimed in claim 1 is characterized in that described metal is to be an aluminium material.

8, air-blowing type wafer heat abstractor as claimed in claim 1 is characterized in that described metal is to be a silver medal material,

9, air-blowing type wafer heat abstractor as claimed in claim 1 is characterized in that described metal is to be the high metal material of a coefficient of heat conduction.

10, air-blowing type wafer heat abstractor as claimed in claim 1, the carbon that it is characterized in that described shape structure is to be diamond.

11, air-blowing type wafer heat abstractor as claimed in claim 1 is characterized in that described Heat Conduction Material is formed by chemical vapour deposition (CVD).

12, air-blowing type wafer heat abstractor as claimed in claim 1 is characterized in that described Heat Conduction Material is formed by physical vapour deposition (PVD).

13, air-blowing type wafer heat abstractor as claimed in claim 1 is characterized in that described Heat Conduction Material is formed by plating mode.

14, air-blowing type wafer heat abstractor as claimed in claim 1 is characterized in that described Heat Conduction Material is formed by the fusion mode.

15, a kind of air-blowing type wafer heat abstractor manufacture method is applicable to the usefulness of a wafer heat radiation to it is characterized in that described wafer heat abstractor manufacture method comprises:

One air flow-producing device is provided, and on described air flow-producing device, forms gas outlet;

Be provided with on several radiating fin to one bottom surfaces, and described several radiating fins and described bottom surface form the corresponding described gas outlet that enters the mouth of at least one gas;

Utilize a processing procedure mode to produce a Heat Conduction Material of carbon with a metal and a shape structure;

Utilize described Heat Conduction Material to form a fin;

Described fin is set on a plane of described wafer; And

One heat pipe is set between described radiating fin and described fin.

16, air-blowing type wafer heat abstractor manufacture method as claimed in claim 15 is characterized in that also comprising and provides a fan as described air flow-producing device.

17, air-blowing type wafer heat abstractor manufacture method as claimed in claim 15 is characterized in that also comprising an end face that forms a corresponding described bottom surface described radiating fin is located between described bottom surface and the end face.

18, air-blowing type wafer heat abstractor manufacture method as claimed in claim 15 is characterized in that also comprising and provides copper as described metal.

19, air-blowing type wafer heat abstractor manufacture method as claimed in claim 15 is characterized in that also comprising and provides aluminium as described metal.

20, air-blowing type wafer heat abstractor manufacture method as claimed in claim 15, it is characterized in that also comprising provide silver as described metal.

21, air-blowing type wafer heat abstractor manufacture method as claimed in claim 15 is characterized in that also comprising and provides the high metal of a coefficient of heat conduction as described metal.

22, air-blowing type wafer heat abstractor manufacture method as claimed in claim 15 is characterized in that also comprising the carbon of diamond as described shape structure is provided.

23, air-blowing type wafer heat abstractor manufacture method as claimed in claim 15 is characterized in that also comprising in a chemical vapour deposition (CVD) mode and forms described Heat Conduction Material.

24, air-blowing type wafer heat abstractor manufacture method as claimed in claim 15 is characterized in that also comprising in a physical vapour deposition (PVD) mode and forms described Heat Conduction Material.

25, air-blowing type wafer heat abstractor manufacture method as claimed in claim 15 is characterized in that also comprising with a plating mode and forms described Heat Conduction Material.

26, air-blowing type wafer heat abstractor manufacture method as claimed in claim 15 is characterized in that also comprising in a fusion mode and forms described Heat Conduction Material.

Images