CN1841866A - Cooler and cooler laminated body for semiconductor - Google Patents
Cooler and cooler laminated body for semiconductor Download PDFInfo
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- CN1841866A CN1841866A CN 200510062477 CN200510062477A CN1841866A CN 1841866 A CN1841866 A CN 1841866A CN 200510062477 CN200510062477 CN 200510062477 CN 200510062477 A CN200510062477 A CN 200510062477A CN 1841866 A CN1841866 A CN 1841866A
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Abstract
The invention provides a semiconductor used cooler. When the semiconductor chip and the semiconductor used cooler generate the heat bulking, it can avert the semiconductor chip break away from the semiconductor used cooler. It at least comprises an upper plate (100a), a middle plate (3) and a lower plate (200a), an entrance with cooling media (101), an exit (202) and a flow circuit part (31) and the semiconductor chip used to cool the chip, wherein the upper plate (100a) and the lower plate (200a) are formed by compound plate.
Description
Technical field
The semiconductor of cooling of semiconductor chip that the present invention relates to be used for semiconductor laser diode etc. is with cooler and it is multilayer laminated and semiconductor cooler duplexer that form.
Background technology
On the semiconductor chip that is accompanied by high heating of semiconductor laser diode etc., be equipped with the water-cooled semiconductor that is called as water collar cooler, cool off semiconductor chip in the use, the function of maintenance semiconductor chip by this semiconductor with cooler.
With cooler following structure is arranged as above-mentioned semiconductor: upper board that will be formed by copper by diffusion bond, scolding tin joint etc. and intermediate plate and lower panel form, and inlet portion and the export department and the stream portion of formation cooling water, by flowing through from stream portion that inlet portion flows into and arriving export department, cooling of semiconductor element (for example with reference to patent documentation 1) efficiently
Patent documentation 1: the spy opens flat 11-97770 communique
Summary of the invention
But, because the plate rigidity that is formed by copper is lower, so for example in that semiconductor is multilayer laminated and carry respectively on cooler under the situation of semiconductor laser diode with the output that increases laser beam at each semiconductor with cooler, if use bolt etc. to link a plurality of semiconductors cooler, then the binding strength that bolt etc. occurs being defeated by is caused semiconductor crooked and the directivity of laser beam produced dysgenic problem with cooler.In addition, even do not having multilayer laminated semiconductor,, also will produce harmful effect to the directivity of laser beam if take place on cooler crookedly at semiconductor with under the situation of cooler.
In addition, because the coefficient of thermal expansion as the copper of the material of each plate is higher, material with semiconductor chip, for example the coefficient of thermal expansion of GaAs etc. is widely different, therefore has because the heating of semiconductor chip causes through later half conductor chip after a while from the problem of semiconductor with the cooler disengaging.
Therefore problem of the present invention is: it is crooked that it is not taken place on cooler at semiconductor, when when semiconductor chip and semiconductor thermal expansion take place on cooler, prevents that semiconductor chip breaks away from cooler from semiconductor.
Semiconductor cooler of the present invention, at least include upper board, intermediate plate and lower panel, inlet portion, export department and stream portion with coolant, be used for cooling of semiconductor element, it is characterized in that, this upper board and this lower panel be the single face of accessory plate or two-sided on plate the composite plate that thickness constitutes more than or equal to the copper of 0.05mm, described accessory plate is more than or equal to 1000N/mm by hot strength
2, pyroconductivity constitutes smaller or equal to 6.0ppm/ ℃ material more than or equal to 100W/mK, coefficient of thermal expansion.
Copper-plated thickness is preferably 0.1mm～0.5mm, and the thickness of accessory plate is preferably 0.1mm～0.5mm.As the satisfied above-mentioned hot strength that relates to accessory plate, pyroconductivity, the material of the condition of coefficient of thermal expansion can be enumerated for example molybdenum, but is not limited to this.When constituting semiconductor chip by GaAs, accessory plate preferably is made of molybdenum.
Under the situation that intermediate plate is formed by copper, make being exposed towards the outside of composite plate, and preferably be that the center constitutes on above-below direction symmetrically with the intermediate plate by copper-plated.
In addition, the present invention also provides a kind of semiconductor cooler duplexer, this semiconductor is that note semiconductor on the multilayer is carried out stacked with cooler and links by bolt with the cooler duplexer, and has semiconductor laser two to swash pipe and constitute as semiconductor-chip-mounting on cooler at each semiconductor.
In the present invention, because upper board and lower panel are made composite plate, described composite plate plates thickness and forms more than or equal to the copper of 0.05mm on the single face of accessory plate or two sides, and accessory plate is owing to adopt hot strength more than or equal to 1000N/mm
2, pyroconductivity is more than or equal to 100W/mK, the coefficient of thermal expansion material smaller or equal to 6.0ppm/ ℃, so pyroconductivity is higher, cooling effectiveness is good, simultaneously, rigidity is higher can not to be taken place crookedly, can not produce harmful effect to the action of semiconductor chip thus.Particularly, be under the situation of semiconductor laser diode at semiconductor chip, owing to, the direction of semiconductor laser diode can be kept certain, so the directivity of laser beam can not produce error by not making accessory plate crooked.In addition, the coefficient of thermal expansion of accessory plate is owing to approach the coefficient of thermal expansion of semi-conducting material, even therefore generate heat from semiconductor chip, after after a while, semiconductor chip can not break away from yet.
If copper-plated thickness is made 0.1mm～0.5mm, the thickness of accessory plate is made 0.1mm～0.5mm, then can obtain not take place crooked suitable intensity.
If with the material of molybdenum as accessory plate, then because easy to process, therefore low price has good and economic.
Material at accessory plate is a molybdenum, under the situation that semiconductor chip is formed by GaAs, coefficient of thermal expansion with respect to GaAs is 5.9ppm/ ℃, the coefficient of thermal expansion of molybdenum is lower, be 5.1ppm/ ℃, can suppress the thermal expansion that coefficient of thermal expansion is 17.0ppm/ ℃ a copper thus, so semiconductor chip can not break away from cooler from semiconductor after after a while.
In addition, form by copper at intermediate plate, constitute under the situation that the copper coatings of the composite plate of upper board and lower panel exposes to the outside, because the copper with intermediate plate is the center, on above-below direction, constitute symmetrically, therefore the bimetallic effect is cancelled, and can avoid the bending of semiconductor with cooler integral body, so also can prevent from the action of semiconductor chip is caused harmful effect.
In addition, will on the note semiconductor with cooler in the semiconductor usefulness cooler duplexer multilayer laminated and that fix by bolt etc., since each semiconductor with cooler can not be defeated by bolt etc. binding strength and can be crooked, therefore semiconductor laser diode is equipped on each semiconductor with the situation on the cooler under, the directivity that can keep laser beam, and can increase output.
Description of drawings
Fig. 1 is the stereogram of 2 accessory plates of expression and intermediate plate.
Fig. 2 is illustrated in the upper board of enforcement plating on the accessory plate and the stereogram of lower panel and intermediate plate.
Fig. 3 is the front view of the structure of expression upper board and lower panel.
Fig. 4 is the stereogram that the semiconductor before expression engages is used cooler.
Fig. 5 is the stereogram of expression semiconductor with cooler.
Fig. 6 is the key diagram that flows of expression coolant.
Fig. 7 is the front view of expression semiconductor with the cooler duplexer.
Fig. 8 is the end view of expression semiconductor with the cooler duplexer.
Embodiment
Semiconductor of the present invention is to use 2 accessory plates 1,2 shown in Figure 1 and intermediate plate 3 to make with cooler.Accessory plate the 1, the 2nd, by hot strength more than or equal to 1000N/mm
2, pyroconductivity forms smaller or equal to 6.0ppm/ ℃ material more than or equal to 100W/mK, coefficient of thermal expansion.As the material of all conditions that satisfy these hot strengths, pyroconductivity, coefficient of thermal expansion, can list for example molybdenum, copper tungsten etc.The hot strength of molybdenum is 1370N/mm
2, pyroconductivity is 139W/mK, coefficient of thermal expansion is 5.1ppm/ ℃.On the other hand, for copper tungsten, for example contain under the situation of copper in the volume ratio with 2%～10%, its hot strength is 3322N/mm
2～3630N/mm
2, pyroconductivity is 180W/mK～200W/mK, coefficient of thermal expansion is 6.0ppm/ ℃～8.0ppm/ ℃.
On the single face or two sides of 2 accessory plates 1,2, plate copper, the formation composite plate of thickness more than or equal to 0.05mm.In Fig. 2, show in the accessory plate 1,2 any one, on the two sides, carry out the example of the situation of copper facing 10,11,20,21.In illustrated embodiment, on accessory plate 1, implement copper facing 10,11, constitute upper board 100a, on accessory plate 2, implement copper facing 20,21, constitute lower panel 200a.
For accessory plate 1,2, owing to can on single face or two sides, implement copper facing, so just like the variation shown in Fig. 3 (A)～(D).At first, identical with the example of Fig. 2 in the example shown in Fig. 3 (A), on the two sides of accessory plate 1, implement copper facing 10,11, constitute upper board 100a, for accessory plate 2, also on its two sides, implement copper facing 20,21, constitute lower panel 200a.In the example of Fig. 3 (B), on the two sides of accessory plate 1, implement copper facing 10,11, constitute upper board 100a, implement copper facing 20 on only below accessory plate 2, constitute lower panel 200b.In the example of Fig. 3 (C), only implement copper facing 10 in the above for accessory plate 1, constitute upper board 100b, for accessory plate 2, on its two sides, implement copper facing 20,21, constitute lower panel 200a.In the example of Fig. 3 (D), only enforcement copper facing 10 on accessory plate 1 constitutes upper board 100b, also only implements copper facing 20 below for accessory plate 2, constitutes lower panel 200b.Which kind of situation no matter, after engaging upper board 1, intermediate plate 2, lower panel 3, on the top and bottom of exposing, implement copper facing 10,20, and according to the order of copper-accessory plate 1-copper-accessory plate 2-copper carry out stacked, constitute, in addition, because accessory plate 1,2 forms by same material, therefore forming with Centromedian copper is center symmetrical form on above-below direction.Therefore, the bending that causes owing to bimetallic effect can not take place, simultaneously, because upper board 1 is top by copper facing, therefore better to the cooling effect that is equipped on the semiconductor chip on the upper board 1.
At this, the order during to enforcement copper facing on the accessory plate 1,2 that constitutes upper board 100 and lower panel 200 describes.At first, carrying out the alkali degreasing and the cleaning of accessory plate 1,2 at first.Alkali degreasing is by for example at (5A/D
2) current density under the electrolytic degreasing that utilizes NaOH carry out.
Below, as the acid treatment that is used to corrode, carry out pickling by the HCl aqueous solution, simultaneously, after finishing cleaning, the two sides is corroded.This corrosion is carried out for the firm oxide-film of removing the accessory plate 1,2 that is made of molybdenum, copper tungsten etc., as corrosive liquid, adopts for example nitration mixture (H
2O+HNO
3+ H
2SO
4).Be removed the degree of about 5 μ m by this corrosion two sides.
After the corrosion, at H
2Anneal with the temperature of about 850 degree in the environment, after the surfacing of reduction accessory plate 1,2,, carry out the nickel strike plating in order to generate substrate to improve the copper-plated dhering strength that carries out thereafter.This nickel strike plating is, for example at (5A/D
2) current density under, bathe (baths of ウ Star De) with nickel chloride as the Wood of the plating bath of principal component and carry out by utilizing, clean then and drying.
After the nickel strike plating, anneal with this, further carry out the nickel strike plating then thereon, and clean the nickel that plates and the material phase sintering of accessory plate 1,2.
Below, on by the two sides of the accessory plate 1,2 of nickel plating, adopt for example copper sulfate bath, at (7A/D
2) current density under carry out copper facing.At this, thickness of coating is the degree of 0.1mm～0.5mm, for example can be the degree of 0.3mm.
At last, utilize machining center etc. to make the planarization of copper facing face, realize the thickness of coating homogenization, simultaneously, by the shaping excircle, form thus as Fig. 2 and the copper-plated composite plate of enforcement on the two sides of accessory plate 1,2 shown in Figure 3, a side of composite plate is upper board 100a (100b), and the opposing party is lower panel 200a (200b).
According to the method described above, forming upper board 100a (100b), lower panel 200a (200b) afterwards, as shown in Figure 4, by the processing that burn into utilizes the machining center to carry out, process for example upper board 100a, intermediate plate 3, lower panel 200a respectively, be formed for the structure of circulating cooling medium with this, meanwhile, form the structure of the stacked a plurality of semiconductors of possibility with cooler.
On upper board 100a, perforation above-below direction ground is formed with the inlet portion 101 as the inlet of coolant, and then, form cooling end 102 and inflow portion 103, described cooling end 102 is used to carry out the actual cooling undertaken by coolant, and described inflow portion 103 is used to connect into oral area 101 and cooling end 102.Inlet portion 101 forms the size of the pipeline that can take in the coolant that is used to circulate, is formed with inflow portion 103 from inlet portion 101 towards the cooling end 102 that forms the broach shape.
On intermediate plate 3, perforation above-below direction ground is formed with the stream portion 31 as the stream of coolant.Stream portion 31 is connected with cooling end 102 when intermediate plate 3 engages with upper board 100a and lower panel 200a, plays to make the coolant that flows out from cooling end 102 to the mobile effect of lower panel 200a.
On the upper side of lower panel 200a, be formed with discharge road 201 as the passage of the coolant of discharging, and, be formed with export department 202 with the form that connects lower panel 200a at above-below direction as the outlet of coolant.Discharge road 201 and be connected with export department 202, the coolant that flows out from the stream portion 31 of intermediate plate 3 arrives export department 202 via discharging road 201.Export department 202 is can take in the form formation that is used for discharging to the outside pipeline of coolant.
In addition, on intermediate plate 3 and lower panel 200a, with the inlet portion 101 corresponding positions of upper board 100a on be formed with inlet portion intercommunicating pore 32,203 respectively, on upper board 100a and intermediate plate 3, with the export department 202 corresponding positions of lower panel 200a on connect respectively and be formed with export department's intercommunicating pore 104,33.Inlet portion intercommunicating pore 32,203 and export department's intercommunicating pore 104,33 be, a plurality of semiconductors are being carried out under the stacked situation with cooler, is used for the device by the pipeline that makes the coolant circulation.
In addition, on the corresponding respectively position of upper board 100a, intermediate plate 3, lower panel 200a, be formed with a plurality of binder bolts hole 105,34,204.This binder bolt hole 105,34,204 is to use under the situation of cooler at stacked a plurality of semiconductors, is used for inserting the hole of logical bolt.In addition, even at copper-plated upper board 100b on the single face of accessory plate 1,2 only, under the situation of lower panel 200b (with reference to Fig. 3), also, carry out the processing that burn into utilizes the machining center to carry out with above-mentioned same.In addition, inlet portion inserting hole 32,203, export department's intercommunicating pore 104,33, binder bolt hole 105,34,204 can engage upper board 100a (100b), and intermediate plate 3, lower panel 200a (200b) form afterwards.
If engage upper board 100a, intermediate plate 3, lower panel 200a then form semiconductor shown in Figure 5 cooler 4.For example using scolding tin to engage under the situation of upper board, intermediate plate, lower panel, before this, upper board, intermediate plate and lower panel are carried out pre-treatment.Below, the content of this pre-treatment is described.In copper-plated situation on the two sides of accessory plate 1,2 and copper facing situation on the single face of accessory plate 1,2 only, the method for pre-treatment has difference a little, therefore is divided into
(1) copper-plated situation on the two sides of accessory plate;
(2) copper-plated situation on the single face of accessory plate;
Describe.Because intermediate plate 3 is formed by copper, so is the processing identical with (1).In the example shown in Fig. 3 (A), on upper board 100a and lower panel 200a, be suitable for the method for (1).In the example shown in Fig. 3 (B), on upper board 100a, be suitable for the method for (1), on lower panel 200b, be suitable for the method for (2).In the example shown in Fig. 3 (C), on upper board 100b, be suitable for the method for (2), on lower panel 200a, be suitable for the method for (1).In the example shown in Fig. 3 (D), on upper board 100a and lower panel 200a, be suitable for the method for (2).
(1) implementing on the two sides of accessory plate under the copper-plated situation, at first, will be as the upper board 100a or the lower panel 200a of pre-treatment object, by for example at current density (5A/D
2) under the electrolytic degreasing that utilizes NaOH carry out alkali degreasing, cleaning.Then, in order to remove the oxide-film of copper, carry out pickling by the HCl aqueous solution, and clean.
Then, at for example current density (5A/D
2) condition under, utilize and to bathe (bath of ウ Star De) with nickel chloride as the Wood of the plating bath of principal component and carry out the nickel strike plating, after cleaning, at (1A/D
2) current density under utilize with nickel chloride and nickelous sulfate and bathe (bath of ウ Star De) as the Wood of the plating bath of Main Ingredients and Appearance, carry out nickel plating, be about 1 μ m up to for example thickness of coating.
Then, after cleaning, at (2A/D
2) current density under utilize cyanogen to bathe to carry out the metal strike plating, after cleaning, at (1A/D
2) current density under bathe by carrying out cyanogen, carry out metal plating and be about 2～3 μ m up to thickness of coating.This metal plating is carried out in order to engage the composite plate and the intermediate plate 3 that constitute upper board 100a and lower panel 200a, like this, has just finished pre-treatment.
(2) under the copper-plated situation of enforcement on the single face of accessory plate, do not handle there being copper-plated side.At first, carry out alkali degreasing and cleaning as the upper board 100b or the lower panel 200b of pre-treatment object.Alkali degreasing is by at for example (5A/D
2) current density under the electrolytic degreasing that utilizes NaOH carry out.And, after carrying out pickling by the HCl aqueous solution and cleaning, do not carry out burn into cleaning, the drying of ormal weight to there being copper-plated side.
Then, at H
2Under about 850 ℃ temperature, finish in the environment after the annealing, carry out the nickel strike plating.This nickel strike plating is at for example (5A/D
2) current density under, (bath of ウ Star De) carry out by bathing as the Wood of the plating bath of principal component with nickel chloride, washes after electroplating.
In order to merge the nickel after the plating, once more at H
2Under about 850 ℃ temperature, anneal in the environment, then, at for example (5A/D
2) current density under, carry out the nickel strike plating by bathing (bath of ウ Star De) as the Wood of the plating bath of principal component with nickel chloride.The nickel strike plating of carrying out is here carried out as the pre-treatment of the following nickel plating that will carry out.
Below, at (1A/D
2) current density under, by bathing (bath of ウ Star De) as the Wood of the plating bath of principal component, carry out nickel plating with nickel chloride and nickelous sulfate, reach about 1 μ m up to for example thickness of coating.Then, after cleaning, anneal, will merge at this nickel that plates and the nickel that plates by the nickel strike plating.
Below, at (2A/D
2) under the current density, bathe by cyanogen and to carry out the metal strike plating, after cleaning, by at (1A/D
2) current density under carry out cyanogen and bathe, carry out metal plating and reach about 2～3 μ m up to thickness of coating.This metal-plated is carried out for the side of the accessory plate 2 of the side of the accessory plate 1 of upper board 100b and lower panel 200b and intermediate plate 3 are engaged.Finish pre-treatment to this.
According to last note (1), (2) any one, carry out the pre-treatment of upper board and lower panel, simultaneously, intermediate plate 3 is also carried out and above-mentioned (1) identical processing.Just, also carry out pre-treatment for intermediate plate 3 according to the order of nickel strike plating nickel plating metal strike plating metal-plated.
Next, is thickness that the 10 μ m～soldering board of 30 μ m degree is processed into the shape of the contact-making surface of upper board 100a (100b) and intermediate plate 3, simultaneously, be thickness that the 10 μ m～soldering board of 30 μ m degree is processed into the shape of the contact-making surface of lower panel 200a (200b) and intermediate plate 3 similarly.Then, with 2 processed like this soldering boards be installed between upper board 100a (100b) and the intermediate plate 3 respectively, between intermediate plate 3 and the lower panel 200a (200b), and exert pressure by anchor clamps and to fix, heating is tens of seconds under 300 ℃～400 ℃ temperature, carry out integratedly, just form as shown in Figure 5 semiconductor then with cooler 4.
, be equipped with semiconductor chip 5 and be cooled with on cooler 4 at this semiconductor.The position of carrying semiconductor chip 5 be cooling end 102 shown in Figure 4 directly over.As shown in Figure 6, the coolant that flows into from the inlet portion 101 of upper board 100a cools off the semiconductor chip directly over it 5 by inflow portion 103 arrival cooling ends 102.This coolant descends along stream portion 31 then, and passes through the discharge road 201 of lower panel 200a, flows out from export department 202.
Constitute the material of accessory plate 1,2, if pyroconductivity is reasonable more than or equal to 100W/mK (for example being 139W/mK under the situation of molybdenum), owing to carry out copper facing on the face in the exposing of upper board of carrying semiconductor chip 5, so higher to the cooling effect of semiconductor chip 5.And, because hot strength is also more than or equal to 1000N/mm
2(for example under the situation of molybdenum 1370N/mm
2) and rigidity higher, therefore can bring into play higher cooling effect, and semiconductor chip 5 can not take place on the skew stably to support.Therefore, can not produce harmful effect to the action of semiconductor chip, particularly, be under the situation of semiconductor laser diode at semiconductor chip, can not produce error on the directivity of laser beam.
And, under the situation of the arbitrary structure in Fig. 3 (A), (B), (C), (D), because with the copper that constitutes intermediate plate 3 or the copper that constitutes intermediate plate and the copper that plated is the center, on above-below direction, constitute symmetrically, therefore, can offset the bimetallic effect that causes by the difference of the coefficient of thermal expansion of copper and aiding plate material, can not make semiconductor with cooler 4 bendings, also can prevent the bad influence that the action to semiconductor chip produces thus.
In addition, form by GaAs at semiconductor chip, and under the situation that accessory plate 1,2 is made of molybdenum, the coefficient of thermal expansion of GaAs is 5.9ppm/ ℃ relatively, the coefficient of thermal expansion of molybdenum is lower, be 5.1ppm/ ℃, owing to can suppress the thermal expansion of copper, therefore can prevent to come off through later half conductor chip after a while.
Hold the accessory plate that forms by molybdenum, copper tungsten etc. though can consider to use the plate holder that forms by copper, and by thermal diffusion it is engaged and to be one, perhaps form one via clamping accessory plate such as scolding tin and with its sintering by the plate that forms by copper, form the method for composite plate with this, but in these methods, have but that the part enters air and forms hole in the junction surface, cause heat conduction by partly blocking-up, the low problem of cooling effect and accessory plate and copper coin are peeled off after after a while problem.And in the present invention,, therefore on the junction surface, can not form hole owing to constitute composite plate by electroplating, do not produce the problems referred to above.
Semiconductor shown in Figure 7 cooler duplexer 6, be that semiconductor shown in Figure 5 is multilayer laminated with cooler 4, and in the binder bolt hole 105,34,204 (with reference to Fig. 4) in-and-out bolt 60, fix by nut 61, be equipped with semiconductor chip 5 at each semiconductor respectively on the upper board of cooler 4.In addition, with between cooler 4, leave space 62 in order to ensure the mounting space of semiconductor chip 5, and first pipeline 63 and second pipeline 64 connect each semiconductor usefulness cooler 4 at each semiconductor on above-below direction.
As shown in Figure 8, with in the inlet portion 101 and inlet portion intercommunicating pore 32,203 (with reference to figure 4) of cooler 4, be through with first pipeline 63 at each semiconductor.If describe with reference to Fig. 4 and Fig. 8, then in first pipeline 63, short transverse at the inlet portion 101 of upper board 100a (100b) is formed with tap hole 63a, in inlet portion 101, flow out to the coolant that flows into the road 103 along cooling end 102 (with reference to Fig. 4), cooling of semiconductor element 5 from tap hole 63a.In addition, the coolant that flows out from tap hole 63a does not descend along the inside of pipeline 63, and then flows out from other tap hole 63a of below, for the cooling of other semiconductor chip 5.
On the other hand, be through with second pipeline 64 at each semiconductor in the export department 202 of cooler 4 and export department's intercommunicating pore 34,104.In second pipeline 64, on the short transverse of the export department 202 of lower panel 200a (200b), be formed with ostium 64a, in export department 202, flow into from ostium 64a by cooling end 102 and the coolant that is used to cool off, rise along second pipeline 64, discharge to the outside then.
Like this,, flow out to the outside then, can cool off all semiconductor chips 5 by making coolant at the internal circulation of each semiconductor with cooler 4.Constitute each semiconductor cooler 4 of this semiconductor with cooler duplexer 6, owing to the binding strength that can not be defeated by bolt 60 takes place crooked, therefore be under the situation of semiconductor laser diode at semiconductor chip 5, the directivity of laser beam can often keep necessarily, and can increase its output.
The present invention can cool off the semiconductor chip with the height heating, and can be used for stably supporting.
Claims (10)
1. semiconductor cooler, at least include upper board, intermediate plate and lower panel, inlet portion, export department and stream portion with coolant, be used for cooling of semiconductor element, it is characterized in that, this upper board and this lower panel be the single face of accessory plate or two-sided on plate the composite plate that thickness constitutes more than or equal to the copper of 0.05mm, described accessory plate is more than or equal to 1000N/mm by hot strength
2, pyroconductivity constitutes smaller or equal to 6.0ppm/ ℃ material more than or equal to 100W/mK, coefficient of thermal expansion.
2. semiconductor cooler as claimed in claim 1 is characterized in that, described copper-plated thickness is 0.1mm～0.5mm, and the thickness of described accessory plate is 0.1mm～0.5mm.
3. semiconductor cooler as claimed in claim 1 is characterized in that the material of described accessory plate is a molybdenum.
4. semiconductor cooler as claimed in claim 3 is characterized in that described semiconductor chip is formed by GaAs.
5. semiconductor cooler as claimed in claim 1 is characterized in that described intermediate plate is formed by copper, described composite plate, and it is copper-plated to expose towards the outside.
6. semiconductor cooler duplexer, be to carry out stacked with cooler the semiconductor that multilayer is used for cooling of semiconductor element and link constituting by bolt, this semiconductor comprises upper board at least with cooler, intermediate plate and lower panel, and have inlet portion and the export department and a stream portion of coolant, it is characterized in that, as semiconductor-chip-mounting semiconductor laser diode is arranged at each semiconductor on cooler, this upper board and this lower panel be the single face of accessory plate or two-sided on plate the composite plate that thickness constitutes more than or equal to the copper of 0.05mm, described accessory plate is more than or equal to 1000N/mm by hot strength
2, pyroconductivity is more than or equal to 100W/mK, and coefficient of thermal expansion constitutes smaller or equal to 6.0ppm/ ℃ material.
7. semiconductor cooler duplexer as claimed in claim 6 is characterized in that described copper-plated thickness is 0.1mm～0.5mm, and the thickness of described accessory plate is 0.1mm～0.5mm.
8. semiconductor cooler duplexer as claimed in claim 6 is characterized in that the material of described accessory plate is a molybdenum.
9. semiconductor cooler duplexer as claimed in claim 8 is characterized in that described semiconductor chip is formed by GaAs.
10. semiconductor cooler duplexer as claimed in claim 6 is characterized in that described intermediate plate is formed by copper, described composite plate, and its copper-plated one side is exposed to the outside.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510062477 CN1841866A (en) | 2005-03-28 | 2005-03-28 | Cooler and cooler laminated body for semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510062477 CN1841866A (en) | 2005-03-28 | 2005-03-28 | Cooler and cooler laminated body for semiconductor |
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| Publication Number | Publication Date |
|---|---|
| CN1841866A true CN1841866A (en) | 2006-10-04 |
Family
ID=37030751
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200510062477 Pending CN1841866A (en) | 2005-03-28 | 2005-03-28 | Cooler and cooler laminated body for semiconductor |
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| CN (1) | CN1841866A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105518855A (en) * | 2013-08-30 | 2016-04-20 | 株式会社电装 | Stacked cooler |
| CN107195604A (en) * | 2016-03-15 | 2017-09-22 | 富士电机株式会社 | The manufacture method of semiconductor module and semiconductor module |
| CN109216303A (en) * | 2017-06-29 | 2019-01-15 | 比亚迪股份有限公司 | A kind of chip radiator and preparation method thereof and DBC board unit |
-
2005
- 2005-03-28 CN CN 200510062477 patent/CN1841866A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105518855A (en) * | 2013-08-30 | 2016-04-20 | 株式会社电装 | Stacked cooler |
| CN105518855B (en) * | 2013-08-30 | 2018-07-06 | 株式会社电装 | Laminated type cooler |
| CN107195604A (en) * | 2016-03-15 | 2017-09-22 | 富士电机株式会社 | The manufacture method of semiconductor module and semiconductor module |
| CN107195604B (en) * | 2016-03-15 | 2022-05-06 | 富士电机株式会社 | Semiconductor module and method for manufacturing semiconductor module |
| CN109216303A (en) * | 2017-06-29 | 2019-01-15 | 比亚迪股份有限公司 | A kind of chip radiator and preparation method thereof and DBC board unit |
| CN109216303B (en) * | 2017-06-29 | 2021-05-14 | 比亚迪股份有限公司 | Chip radiator, preparation method thereof and DBC substrate assembly |
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