CN1841808A - Organic thin film transistor and flat display device comprising the same - Google Patents

Organic thin film transistor and flat display device comprising the same Download PDF

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Publication number
CN1841808A
CN1841808A CNA2006100589098A CN200610058909A CN1841808A CN 1841808 A CN1841808 A CN 1841808A CN A2006100589098 A CNA2006100589098 A CN A2006100589098A CN 200610058909 A CN200610058909 A CN 200610058909A CN 1841808 A CN1841808 A CN 1841808A
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semiconductor layer
organic semiconductor
type organic
hole injection
source electrode
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杨南喆
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Samsung Display Co Ltd
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Samsung SDI Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes

Abstract

Provided are an organic thin film transistor providing smoother movement of holes between a source electrode or a drain electrode and a p-type organic semiconductor layer, and a flat panel display device including the organic thin film transistor. The organic thin film transistor includes a substrate, a gate electrode disposed on the substrate, a p-type organic semiconductor layer insulated from the gate electrode, a source electrode and a drain electrode separated from each other and insulated from the gate electrode, and a hole injection layer interposed between the source and drain electrodes and the p-type organic semiconductor layer.

Description

OTFT and the panel display apparatus that comprises OTFT
Cross reference to related application
It is the right of the korean patent application of No.10-2005-0019057 in the sequence number of Korea S Department of Intellectual Property application that the application is required on March 8th, 2005, and the disclosure content of described patent application is quoted by integral body as reference at this.
Technical field
Embodiment among the present invention relates to a kind of OTFT and a kind of flat-panel monitor that comprises OTFT.More specifically, the embodiment among the present invention relate to a kind of provide the hole between source electrode or drain electrode and the p type organic semiconductor layer more level and smooth mobile OTFT and comprise the panel display apparatus of described OTFT.
Background technology
After conjugation organic polymer-polyacetylene of developing the expression characteristic of semiconductor, owing to the feature of organic material and owing to organic material can synthesize and other advantage of being easy to form fiber or film and organic material comprises reasons such as elasticity, conductibility and low production cost in many ways, in a plurality of fields such as function electronic device and optics, carried out using the transistorized research of organic material.
Conventional silicon thin film transistor comprises having the semiconductor layer that mixes respectively with the source region of high concentration impurities and drain region and the passage area that forms between described source region and described drain region.Conventional silicon thin film transistor further comprises with the semiconductor layer insulation and towards the grid of passage area and the source electrode and the drain electrode that contact with the drain region with the source region respectively.
Yet, owing to the conventional silicon thin film transistor with said structure be expensive, be subjected to unexpected bump from external force and be easy to fragmentation and at high temperature for example under about 300 ℃ or higher temperature, produce, so this transistor can not be placed on plastic base or the similar device.
Particularly, panel display apparatus such as liquid crystal indicator (LCDs) or el display device (ELDs) use thin-film transistor as switching device and pixel driving device.In addition, use be not the substrate that forms by glass but by plastics effort continue in case help recently towards big, approach and the trend of flexible flat display unit.Yet when using plastic base, conventional silicon thin film transistor should be at low temperature rather than is at high temperature produced.Therefore, need conventional silicon thin film transistor other optional mode in addition.
This problem can be resolved as the semiconductor layer of thin-film transistor by using organic membrane.
Yet the shortcoming of OTFT is that the contact resistance between source electrode, drain electrode and the organic semiconductor layer is bigger.In other words, compare, can not the organic semiconductor layer that comprise in the OTFT be mixed with the impurity of high concentration with the silicon semiconductor layer that comprises in the conventional silicon thin film transistor.Therefore, the contact resistance between source electrode, drain electrode and the organic semiconductor layer increases to the impossible degree of ohmic contact.
Summary of the invention
Embodiment among the present invention provides a kind of OTFT, and described OTFT provides the more level and smooth panel display apparatus that move and comprise described OTFT of hole between source electrode or drain electrode and p type organic semiconductor layer.
According to an aspect of the present invention, a kind of OTFT is provided, described OTFT comprises substrate, be arranged on grid on the described substrate, and the p type organic semiconductor layer of described gate insulator, separate each other and and the source electrode and the drain electrode of described gate insulator and be plugged on described source electrode and described drain electrode and described p type organic semiconductor layer between hole injection layer.
Described p type organic semiconductor layer can be a hole transmission layer.
Described p type organic semiconductor layer can be set in described source electrode and the described drain electrode.Described grid can be set on the described p type organic semiconductor layer.Gate insulating film can further be set between described p type organic semiconductor layer and the described grid.
Described hole injection layer can be set on the whole surface of described substrate to cover described source electrode and described drain electrode.
Described p type organic semiconductor layer can be set on the described grid.Described source electrode and described drain electrode can be set on the described p type organic semiconductor layer.Gate insulating film can further be set between described p type organic semiconductor layer and the described grid.
Described hole injection layer can be configured to cover described p type organic semiconductor layer.
The highest occupied molecular orbital of described hole injection layer (HOMO) energy level may be present between the highest occupied molecular orbital energy level of the Fermi level of described source electrode or described drain electrode and described p type organic semiconductor layer.
The hole mobility of described p type organic semiconductor layer can be greater than the hole mobility of described hole injection layer.
The thickness of described hole injection layer can be about 10nm to about 100nm.
Described hole injection layer can be formed by at least a compound in the cohort that is selected from the phthalocyanine compound that comprises triarylamine based compound, diaryl amine based compound, arylamine group compound and comprise metal ion.
Described p type organic semiconductor layer can be formed by at least a material in the cohort that is selected from the derivative that comprise pentacene, poly-inferior thienyl ethenylidene, poly--the 3-hexyl thiophene, the inferior thienyl of α-six, aphthacene, anthracene, naphthalene, α-6-thiophene, α-4-thiophene, perylene, rubrene, coronene, polythiophene, poly-phenylene vinylene (ppv) support, polyparaphenylene, poly-fluorenes, polythiophene ethenylidene, polythiophene-heteroaromatic copolymer and these materials.
The thickness of the passage area that forms in described p type organic semiconductor layer can be from about 50nm to about 200nm.
According to another aspect of the present invention, provide a kind of panel display apparatus that comprises described OTFT.
According to another aspect, a kind of panel display apparatus that comprises one or more OTFT is provided, each described transistor comprises substrate; Be arranged on the grid on the described substrate; P type organic semiconductor layer with described gate insulator; Separate each other and with the source electrode and the drain electrode of described gate insulator; And be plugged on hole injection layer between described source electrode and described drain electrode and the described p type organic semiconductor layer.
Description of drawings
In conjunction with the drawings exemplary embodiments of the present invention is described in detail and will be easier to understand the above-mentioned and further feature and the advantage of present embodiment, wherein:
Fig. 1 is the schematic sectional view according to the OTFT of an exemplary embodiments;
Fig. 2 is the schematic sectional view of a kind of modification of OTFT shown in Figure 1;
Fig. 3 is the schematic sectional view according to the OTFT of another exemplary embodiments;
Fig. 4 is the schematic sectional view according to the OTFT of another exemplary embodiments; With
Fig. 5 is the schematic sectional view according to the el display device of an exemplary embodiments.
Embodiment
To more fully describe embodiments of the invention in conjunction with the accompanying drawings now, in described accompanying drawing, exemplary embodiments be shown.
Referring to Fig. 1, according to the OTFT of an exemplary embodiments comprise grid 124, and the p type organic semiconductor layer 122 of grid 124 insulation, separate each other on the substrate 102 and and the source electrode 126 of grid 124 insulation and drain 127 and be plugged on source electrode 126 and drain 127 pairs and p type organic semiconductor layer 122 between hole injection layer 122a.
Particularly, because OTFT shown in Figure 1 is staggered transistor, as shown in Figure 1, so p type organic semiconductor layer 122 is set in source electrode 126 and the drain electrode 127, and grid 124 is set on the p type organic semiconductor layer 122.OTFT shown in Figure 1 further comprises the gate insulating film 123 that is arranged between p type organic semiconductor layer 122 and the grid 124.
In OTFT shown in Figure 1, the charge carrier in the p type organic semiconductor layer 122 is the hole.The hole should be easy to be passed to p type organic semiconductor layer 122 from one of source electrode 126 and drain electrode 127.At source electrode 126 or drain in 127, move along the Fermi level in the energy band diagram in the hole.In p type organic semiconductor layer 122, move along the highest occupied molecular orbital in the energy band diagram (HOMO) energy level in the hole.Difference between Fermi level and the highest occupied molecular orbital energy level is big more, and then energy difference is that potential barrier is big more.Therefore, the hole can not easily be moved.In other words, along with potential barrier becomes bigger, source electrode and drain electrode to and organic semiconductor layer between contact resistance increase.
In order to address this problem, OTFT shown in Figure 1 comprises hole injection layer 122a, described hole injection layer be plugged on source electrode 126 and drain 127 pairs and p type organic semiconductor layer 122 between.Hole injection layer 122a helps the hole from source electrode 126 or drain and 127 move to p type organic semiconductor layer 122.When hole injection layer 122a be plugged on source electrode 126 and drain 127 pairs and p type organic semiconductor layer 122 between the time, and compare when source electrode 126 or 127 the situations when directly contacting p type organic semiconductor layer 122 that drain, contact resistance can sharply reduce.
In order sharply to reduce contact resistance, the highest occupied molecular orbital energy level of hole injection layer 122a preferably be present in source electrode 126 or the highest occupied molecular orbital energy level of drain 127 Fermi level and p type organic semiconductor layer 122 between.In other words, under the situation that the difference between the highest occupied molecular orbital energy level of source electrode 126 or drain 127 Fermi level and p type organic semiconductor layer 122 does not have to change, the hole injection layer 122a with the highest occupied molecular orbital energy level between the highest occupied molecular orbital energy level of the Fermi level that is present in source electrode 126 or drains 127 and p type organic semiconductor layer 122 be plugged on source electrode 126 and drain 127 pairs and p type organic semiconductor layer 122 between.Therefore, the hole has increased from the source electrode 126 or 127 possibilities that move to p type organic semiconductor layer 122 that drain by hole injection layer 122a.This is because move along the Fermi level of electrode and the highest occupied molecular orbital energy level of hole injection layer or organic semiconductor layer in the hole.Hole injection layer 122a can be formed by at least a compound in the cohort that is selected from the phthalocyanine compound that comprises triarylamine based compound, diaryl amine based compound, arylamine group compound and comprise metal ion.These examples for compounds comprise that CuPc (CuPc), T_Starburst amine family material (for example 4,4 ', 4 " three (N-carbazole) triphenylamines (TCTA), 4,4 ', 4 ", three (3-aminomethyl phenyl-phenyl amino)-triphenylamines) are (m-MTDATA) etc.) and analog.Can form hole injection layer 122a by deposition.
Because the hole of introducing in the p type organic semiconductor layer 122 from one of source electrode 126 and drain electrode 127 should be transferred to another electrode, so p type organic semiconductor layer 122 is preferred, but unessential, is manufactured to hole transmission layer.P type organic semiconductor layer 122 is by at least a formation the in the derivative of pentacene, poly-inferior thienyl ethenylidene, poly--the 3-hexyl thiophene, the inferior thienyl of α-six, aphthacene, anthracene, naphthalene, α-6-thiophene, α-4-thiophene, perylene, rubrene, coronene, polythiophene, poly-phenylene vinylene (ppv) support, polyparaphenylene, poly-fluorenes, polythiophene ethenylidene, polythiophene-heteroaromatic copolymer and these materials.
Because the hole movable passageway between source electrode 126 and the drain electrode 127 forms in p type organic semiconductor layer 122, so the hole mobility of p type organic semiconductor layer 122 is preferably greater than the hole mobility of hole injection layer 122a.
The modification or the embodiment that will describe below the above-mentioned feature of hole injection layer 122a and p type organic semiconductor layer 122 is equally applicable to.
Fig. 2 is the schematic sectional view of a kind of modification of OTFT shown in Figure 1.Although the hole injection layer 122a in the OTFT shown in Figure 1 only covers source electrode 126 and drain electrode 127, but the hole injection layer 122a in the OTFT shown in Figure 2 not only covers source electrode 126 and drain electrode 127, but also the exposed region on the covered substrate 102.
Can by use mask only to cover source electrode 126 and drain electrode 127 depositing organic material, by on the whole surface of substrate 102, form hole injection layer and to hole injection layer carry out molding handle (patterning), by for example implementing ink jet printing or by using other technology to form hole injection layer 122a in the OTFT shown in Figure 1.Yet these methods that form hole injection layer 122a are complicated.Therefore, in OTFT shown in Figure 2, on the whole surface of substrate 102, form hole injection layer 122a, simplify the forming process of hole injection layer 122a thus to cover source electrode 126 and drain electrode 127.Hole injection layer 122a shown in Figure 2 can form by coating deposition or spin coating.
Because the hole movable passageway between source electrode 126 and the drain electrode 127 forms in p type organic semiconductor layer 122, so the thickness of hole injection layer 122a is preferred, but unessential, between about 10nm and about 100nm.When the thickness of hole injection layer 122a surpassed 100nm, the hole movable passageway that forms in the p type organic semiconductor layer 122 may be not attached to source electrode 126 or drain 127.When the thickness of hole injection layer 122a during less than 10nm, the hole movable passageway that forms in the p type organic semiconductor layer 122 may not suitably play the effect of hole injection layer.When the thickness of hole injection layer 122a was between about 10nm and about 100nm, the thickness of the passage that forms in the p type organic semiconductor layer 122 was preferred, but unessential, between about 50nm and about 200nm.
Although OTFT illustrated in figures 1 and 2 is staggered transistor, present embodiment is not limited to staggered transistor.
In other words, embodiments of the invention are for example applicable to inversion coplanar type OTFT shown in Figure 3, wherein source electrode 126 and drain electrode 127 are set on the grid 124, p type organic semiconductor layer 122 is set in source electrode 126 and the drain electrode 127, and gate insulating film 123 further be included in a pair of source electrode 126 and drain 127 and grid 124 between.In this case, hole injection layer 122a only forms in source electrode 126 and drain electrode 127, and does not form on the exposed region on the gate insulating film 123.Gate insulating film 123 and grid 124 form on substrate 102.
Embodiments of the invention are also applicable to the staggered OTFT of inversion shown in Figure 4, wherein p type organic semiconductor layer 122 is set on the grid 124, source electrode 126 and drain electrode 127 are set on the p type organic semiconductor layer 122, and gate insulating film 123 further is included between p type organic semiconductor layer 122 and the grid 124.Gate insulating film 123 and grid 124 form on substrate 102.In this case, hole injection layer 122a forms on the whole surface of p type organic semiconductor layer 122.Certainly, can make the multiple change of hole injection layer 122a.For example, hole injection layer 122a can only form in space between source electrode 126 and the p type organic semiconductor layer 122 and the space between drain electrode 127 and p type organic semiconductor layer 122.
Certainly, embodiments of the invention applicable to a plurality of embodiments different according to the OTFT of the foregoing description.
Fig. 5 is the schematic sectional view according to the el display device of an exemplary embodiments (ELD).Because above-mentioned OTFT is flexible, so they can be used for comprising in the multiple flexible flat display unit of thin-film transistor.Because multiple display unit such as LCD, organic electroluminescence display device and method of manufacturing same etc. exist as this panel display apparatus, therefore will be described the organic electroluminescence display device and method of manufacturing same that comprises above-mentioned OTFT briefly now.Fig. 5 uses thin-film transistor shown in Figure 4 (TFT).As indication ground, the 223rd, gate insulating film, the 224th, grid, the 222nd, p type organic semiconductor layer, 222a are hole injection layers, the 226th, source electrode, the 227th, drain electrode and 202 is substrates.
In the el display device that comprises according to the described OTFT of one of them the foregoing description, electroluminescent cell and OTFT are installed on the substrate 202, and described substrate can be formed by clear glass.Substrate 202 also can be formed by for example acrylic resin, polyimides, Merlon, polyester, polyester film (mylar) or other plastic material.
Although can use polytype el display device, el display device shown in Figure 5 is active matrix (AM) the type el display device that comprises OTFT.
Each sub-pixel in the active array type electroluminescence display unit comprises at least one thin-film transistor (TFT) as shown in Figure 5.Referring to Fig. 5, for example can on substrate 202, form by SiO 2The resilient coating (not shown) of making, and aforesaid OTFT is installed on the resilient coating.Although Fig. 5 shows according to one in OTFT of the foregoing description and the modification thereof, embodiments of the invention are not limited to shown OTFT.
For example on OTFT, form by SiO 2The passivating film of making 228.On passivating film 228, form the pixel of making by acrylic compound, polyimides or analog and limit film 229.Passivating film 228 can be used as the transistorized diaphragm of protective film or makes the planarization film of transistorized top surface planeization.
Although not shown among Fig. 5, at least one capacitor can be connected to thin-film transistor.Certainly, the circuit that comprises thin-film transistor is not limited to example shown in Figure 5 but can changes over various ways.
Electroluminescent cell is that sub-pixel is connected to drain electrode 227.First electrode 231 that comprises in the electroluminescent cell forms on passivating film 228, and the pixel that further forms insulation on described passivating film limits film 229.The intermediate layer 233 that comprises at least one luminescent layer limits in the hole that forms in the film 229 in pixel and forms.Second electrode 234 limits on the film 229 in the gained pixel and forms.Can make multiple change to second electrode 234, for example, second electrode 234 can form by common land on a plurality of pixels.Although intermediate layer shown in Figure 5 233 is formed with only corresponding to sub-pixel, doing like this is the structure of each sub-pixel for convenience of explanation.Certainly, the intermediate layer 233 of sub-pixel can be combined into single body with the intermediate layer of adjacent subpixels.Intermediate layer 233 becomes various ways, and for example, some intermediate layers 233 can form independently with corresponding to corresponding sub-pixel, and other intermediate layer form single body with common land corresponding to sub-pixel.
In one embodiment, first electrode 231 is as anode, and second electrode 234 is as negative electrode.Certainly, the polarity of first electrode 231 and second electrode can be reversed.
First electrode 231 can be transparency electrode or reflecting electrode.For first electrode 231 is used as transparency electrode, first electrode 231 can be by tin indium oxide (ITO), indium zinc oxide (IZO), ZnO or In 2O 3Form.For first electrode 231 is used as reflecting electrode, reflectance coating can be formed and apply subsequently tin indium oxide, indium zinc oxide, ZnO or In by the compound of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr or these materials 2O 3
Second electrode 234 also can be transparency electrode or reflecting electrode.For second electrode 234 is used as transparency electrode, the compound of Li, Ca, LiF/Ca, LiF/Al, Al, Mg or these materials can at first deposit and be used for intermediate layer 233, and can form material such as tin indium oxide, indium zinc oxide, ZnO or In by transparency electrode on deposition results subsequently 2O 3Form auxiliary electrode or bus electrode.For second electrode 234 is used as reflecting electrode, the compound of Li, Ca, LiF/Ca, LiF/Al, Al, Mg or these materials can carry out coating deposition.
The intermediate layer 233 that is plugged between first electrode 231 and second electrode 234 can be formed by organic material or inorganic material.The example of organic material comprises monomer organic material and polymer organic material.When intermediate layer 233 is formed by the monomer organic material, it can comprise single hole injection layer (HIL), single hole transmission layer (HTL), single emission layer (EML), single electron transfer layer (ETL) or single electron injecting layer (EIL), described these stacked putting together.Another kind of optional mode is that intermediate layer 233 can be a single layer of implementing all functions of hole injection layer, hole transmission layer, emission layer, electron transfer layer and electron injecting layer.The example that can get the monomer organic material comprises: CuPc (CuPc); N, N '-two (naphthalene-1-yl)-N, N '-diphenyl-benzidine (NPB); Three-oxine aluminium (Alq3) etc.These monomer organic materials for example can form by using mask to carry out vacuum-deposited method.
When intermediate layer 233 was formed by the polymer organic material, it can comprise hole transmission layer and emission layer usually.In this case, hole transmission layer (PEDOT) is formed by poly-(3,4-ethylidene dioxy thiophene) poly-(styrene sulfonate), and emission layer is formed by polymer organic material such as polyphenylene vinylene (PPV yl) material or poly-fluorenyl material.
The electroluminescent cell that forms on substrate 202 seals by the face elements (not shown).Face elements and substrate 202 similarly can be formed by glass or plastics.Another kind of optional mode is that face elements can be crown cap or analog.
El display device shown in Figure 5 comprises the OTFT according to one of them the foregoing description, shows accurate image according to received image signal thus.
Although el display device has been shown to describe embodiments of the invention, embodiments of the invention are applicable to any display unit, as long as it comprises OTFT.
In OTFT according to an embodiment of the invention, hole injection layer is plugged between a pair of source electrode and drain electrode and the p type organic semiconductor layer so that source electrode and drain electrode to and p type organic semiconductor layer between contact resistance can sharply reduce.Therefore, but comprise the accurate image of panel display apparatus clear display of OTFT.
Although present embodiment has been carried out concrete diagram and description in conjunction with exemplary embodiments of the present invention, but it should be appreciated by those skilled in the art and under the situation that does not depart from the spirit and scope of the present invention that following technical proposal limits, to make multiple change in form and details.

Claims (24)

1, a kind of OTFT comprises:
Substrate;
Be arranged on the grid on the described substrate;
P type organic semiconductor layer with described gate insulator;
Separate each other and with the source electrode and the drain electrode of described gate insulator; With
Be plugged on the hole injection layer between described source electrode and described drain electrode and the described p type organic semiconductor layer.
2, OTFT according to claim 1, wherein said p type organic semiconductor layer is a hole transmission layer.
3, OTFT according to claim 1, wherein said p type organic semiconductor layer is set in described source electrode and the described drain electrode, described grid is set on the described p type organic semiconductor layer, and gate insulating film further is set between described p type organic semiconductor layer and the described grid.
4, OTFT according to claim 3, wherein said hole injection layer are set on the whole surface of described substrate to cover described source electrode and described drain electrode.
5, OTFT according to claim 1, wherein said p type organic semiconductor layer is set on the described grid, described source electrode and described drain electrode are set on the described p type organic semiconductor layer, and gate insulating film further is set between described p type organic semiconductor layer and the described grid.
6, OTFT according to claim 5, wherein said hole injection layer are configured to cover described p type organic semiconductor layer.
7, OTFT according to claim 1, the highest occupied molecular orbital energy level of wherein said hole injection layer are present between the highest occupied molecular orbital energy level of the Fermi level of described source electrode or described drain electrode and described p type organic semiconductor layer.
8, OTFT according to claim 1, the hole mobility of wherein said p type organic semiconductor layer is greater than the hole mobility of described hole injection layer.
9, OTFT according to claim 1, the thickness of wherein said hole injection layer are that about 10nm is to about 100nm.
10, OTFT according to claim 1, wherein said hole injection layer is formed by at least a compound in the cohort that is selected from the phthalocyanine compound that comprises triarylamine based compound, diaryl amine based compound, arylamine group compound and comprise metal.
11, OTFT according to claim 1, wherein said p type organic semiconductor layer is formed by at least a material in the cohort that is selected from the derivative that comprises pentacene, poly-inferior thienyl ethenylidene, poly--the 3-hexyl thiophene, the inferior thienyl of α-six, aphthacene, anthracene, naphthalene, α-6-thiophene, α-4-thiophene, perylene, rubrene, coronene, polythiophene, poly-phenylene vinylene (ppv) support, polyparaphenylene, poly-fluorenes, polythiophene ethenylidene, polythiophene-heteroaromatic copolymer and these materials.
12, OTFT according to claim 1 further comprises passage area, and wherein the thickness of the described passage area that will form in described p type organic semiconductor layer is from about 50nm to about 200nm.
13, a kind of panel display apparatus that comprises one or more OTFT, each described transistor comprises:
Substrate;
Be arranged on the grid on the described substrate;
P type organic semiconductor layer with described gate insulator;
Separate each other and with the source electrode and the drain electrode of described gate insulator; With
Be plugged on the hole injection layer between described source electrode and described drain electrode and the described p type organic semiconductor layer.
14, panel display apparatus according to claim 13, wherein said p type organic semiconductor layer is a hole transmission layer.
15, panel display apparatus according to claim 13, wherein said p type organic semiconductor layer is set in described source electrode and the described drain electrode, described grid is set on the described p type organic semiconductor layer, and gate insulating film further is set between described p type organic semiconductor layer and the described grid.
16, panel display apparatus according to claim 15, wherein said hole injection layer are set on the whole surface of described substrate to cover described source electrode and described drain electrode.
17, panel display apparatus according to claim 13, wherein said p type organic semiconductor layer is set on the described grid, described source electrode and described drain electrode are set on the described p type organic semiconductor layer, and gate insulating film further is set between described p type organic semiconductor layer and the described grid.
18, panel display apparatus according to claim 17, wherein said hole injection layer are configured to cover described p type organic semiconductor layer.
19, panel display apparatus according to claim 13, the highest occupied molecular orbital energy level of wherein said hole injection layer are present between the highest occupied molecular orbital energy level of the Fermi level of described source electrode or described drain electrode and described p type organic semiconductor layer.
20, panel display apparatus according to claim 13, the hole mobility of wherein said p type organic semiconductor layer is greater than the hole mobility of described hole injection layer.
21, panel display apparatus according to claim 13, the thickness of wherein said hole injection layer are that about 10nm is to about 100nm.
22, panel display apparatus according to claim 13, wherein said hole injection layer is formed by at least a compound in the cohort that is selected from the phthalocyanine compound that comprises triarylamine based compound, diaryl amine based compound, arylamine group compound and comprise metal.
23, panel display apparatus according to claim 13, wherein said p type organic semiconductor layer is formed by at least a material in the cohort that is selected from the derivative that comprises pentacene, poly-inferior thienyl ethenylidene, poly--the 3-hexyl thiophene, the inferior thienyl of α-six, aphthacene, anthracene, naphthalene, α-6-thiophene, α-4-thiophene, perylene, rubrene, coronene, polythiophene, poly-phenylene vinylene (ppv) support, polyparaphenylene, poly-fluorenes, polythiophene ethenylidene, polythiophene-heteroaromatic copolymer and these materials.
24, panel display apparatus according to claim 13 further comprises passage area, and wherein the thickness of the described passage area that will form in described p type organic semiconductor layer is from about 50nm to about 200nm.
CNA2006100589098A 2005-03-08 2006-03-08 Organic thin film transistor and flat display device comprising the same Pending CN1841808A (en)

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KR1020050019057 2005-03-08
KR1020050019057A KR100647683B1 (en) 2005-03-08 2005-03-08 Organic thin film transistor and flat display apparatus comprising the same

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