CN1828372A - Substrate for a display device and a liquid crystal display device having the substrate therefor - Google Patents
Substrate for a display device and a liquid crystal display device having the substrate therefor Download PDFInfo
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Abstract
The display device substrate according to the present invention is arranged so that: a source line is provided on an area on which a pixel electrode is not provided, and a gap is provided between the source line and the pixel electrode, and a black matrix (light shielding film) which covers a surface of the source line overlaps with the pixel electrode. Thus, it is possible to prevent parasitic capacitance (Csd) between the pixel electrode and the source line from becoming uneven in a display area, so that it is possible to reduce display unevenness of a liquid crystal display device using the present display device substrate.
Description
Technical field
The present invention relates to improve the display device substrate of display quality of display device and liquid crystal display device with display device substrate.
Background technology
Now, liquid crystal display device has as small size, thin thickness, low-power consumption and characteristic such as in light weight, and is widely used in the various electron devices.Particularly, have on-off element and can realize the display performance identical, make it be widely used for OA device such as personal computer, AV device such as televisor, mobile phone etc. with CRT as the active-matrix liquid crystal display device (liquid crystal panel) of active component.In addition, in recent years, liquid crystal display device done more, meticulousr, and improved its quality such as effective elemental area greatly than (aperture than).
Be formed in the same lip-deep this technology of active matrix type substrate at pixel electrode and source electrode line (signal wire), distance between pixel and the source bus line (being designated hereinafter simply as source electrode line) has shortened, and source electrode line is done meticulouslyr, so that the increase effective pixel area makes the meticulousr and raising aperture ratio of device thus.
But, when shorten between pixel and the source electrode line apart from the time, be short-circuited easily.In addition, when source electrode line is done meticulouslyr, fault takes place easily to connect.In other words, in pixel electrode and source electrode line are formed on this technology in the same surface of active-matrix substrate, short circuit be connected fault its output will be descended.
Then, in order to prevent short circuit and be connected fault that so that output does not descend, the someone proposes to make the following method (a)-(c) of active-matrix substrate:
(a) form after active component and the source electrode line, transparent interlayer dielectric is provided.
(b) through contact hole active component and transparent pixels electrode are contacted with each other.
(c) on transparent interlayer dielectric, form pixel electrode, so that source electrode line and pixel electrode lay respectively on the Different Plane.
In addition, filter substrate and the active-matrix substrate combination made from aforementioned manner so that filter substrate is in the face of active-matrix substrate, and are injected into liquid crystal in the gap between the substrate, obtain liquid crystal display device thus.Here, the example of filter substrate comprises the colored substrate in have R (red), G (green) and B (indigo plant) zone, so that the pixel region on the side of these regional corresponding active-matrix substrates, wherein black matrix (black matrix) (optical screen film) is arranged on the pixel region zone in addition.
State before use in the manufacture method of liquid crystal display device of color filter, the precision that forms black matrix (following be called on request " BM ") to the aperture than influential.Can calculate the precision that forms BM by the following precision of addition: (i) precision of combination active-matrix substrate and filter substrate; (ii) form the preset width of BM.In order to address this problem, on June 26th, 1998) and Japanese unexamined patent publication No. communique No.33816/2001 (spy opens 2001-33816) (the open date: February 9 calendar year 2001) introduced a kind of like this technology: on a side of active-matrix substrate, form BM with self-aligned manner, Japanese unexamined patent publication No. communique No.170957/1998 (spy opens flat 10-170957) (the open date: so that raising aperture ratio.
To explain the object lesson of active-matrix substrate below, on this substrate, form BM, referring to Figure 12 and Figure 13 with self-aligned manner.
Figure 12 is the planimetric map of the pixel and the one part of pixel adjacent with this pixel of the conventional active-matrix substrate of expression (thin film transistor (TFT) array).As shown in figure 12, grid bus (sweep trace :) 101 and source bus line (signal wire :) 102 overlapping setting mutually in the pixel of conventional active-matrix substrate hereinafter referred to as source electrode line hereinafter referred to as gate line.In overlapping region, pixel electrode 103 is set.
On gate line 101, provide grid 104.Source electrode 105 is set on source electrode line 102.In addition, pixel electrode 103 is connected to drain electrode 106.In addition, having pixel electrode 103 ' with pixel electrode 103 identical functions is arranged on and has on the pixel adjacent pixels of pixel electrode 103.Source electrode line 102 is arranged between pixel electrode 103 and the pixel electrode 103 '.
Then, below with reference to the method for Figure 12 and Figure 13 brief explanation manufacturing source matrix base plate, particularly make the method for thin film transistor (TFT) array.Notice that Figure 13 is the sectional view along A-A ' the line intercepting of the thin film transistor (TFT) array shown in Figure 12.
At first, form gate line 101, grid 104 and auxiliary capacitor line 107 according to same process on substrate 110, this substrate 110 is transparent insulation substrate of being made by glass etc.Then, form gate insulating film 111 thereon.
Afterwards, form active component 114 as thin film transistor (TFT) (TFT).In Figure 12 and Figure 13, at first, form active semiconductor layer 112.Then, form amorphous silicon (for example n type amorphous silicon) layer 113.In addition, form source electrode line 102 source electrodes 105 and drain electrode 106 (source electrode line 102 and source electrode 105 form according to same process).
Then, the BM that formation is made of the insulation course figure is so that cover active component 114 (except contact hole 109 and its peripheral part), source electrode line 102 and gate line 101 and auxiliary capacitor line 107 (except contact hole 109 ' and its peripheral part).
With self-aligned manner black matrix 108 is arranged on the zone of pixel electrode parts in addition.By revealing the rear side of substrate 110, form BM 108 with self-aligned manner, so that corresponding gate line 101, source electrode line 102, active component 114 and auxiliary capacitor line 107.
Afterwards, form interlayer dielectric 115 to cover whole surface.Then, form contact hole 109 and contact hole 109 '.Then, form pixel electrode 103 and 103 ' so that apply contact hole 109 and 109 '.Notice that contact hole 109 is connected to each other the drain electrode 106 of active component and pixel electrode 103.In addition, contact hole 109 ' is used in the auxiliary capacitor line 107 and the pixel electrode 103 that produce auxiliary capacitor and is connected to each other.
According to this manufacture method, in active-matrix substrate, source electrode line 102 and pixel electrode 103 can be separated, wherein interlayer dielectric 115 places therebetween.
By separating source electrode line and pixel electrode, pixel electrode (103/103 ') and source electrode line 102 are overlapped each other, as shown in figure 13.In routine techniques, improve the aperture ratio of liquid crystal display device in the following manner: (i) make the mutual stack of pixel electrode and source electrode line and (ii) form minimum BM figure with self-aligned manner.
Introduce the how mutually stack of pixel electrode and source electrode line below with reference to Figure 13.(z) shown in Figure 12 and Figure 13 and (z ') respectively represent the distance of source electrode line 102 and pixel electrode 103 or 103 ' the overlapping part.In addition, in Figure 13, z is the distance between z1 and the z2.Equally, z ' is the distance between z1 ' and the z2 '.
Z1 represents to be provided with the position of the end of source electrode line 102, and is the line that extends perpendicular to the surface of source electrode line 102 from the end of source electrode line 102.Equally, z1 ' expression is provided with the position of the end of source electrode line 102, and is the line that extends perpendicular to the surface of source electrode line 102 from the end of source electrode line 102.Notice that z1 is near the end with object pixel adjacent pixel electrodes (103 ').Z1 ' is near the end of pixel electrode (103) of object pixel.
Z2 represents to be positioned at the position of the end of pixel electrode 103 ', and is the line that extends perpendicular to the surface of pixel electrode 103 ' from the end of pixel electrode 103 '.Equally, z2 ' expression is provided with the position of the end of pixel electrode 103, and is the line of the end of pixel electrode 103 perpendicular to the surface extension of pixel electrode 103.
But according to the manufacture method of this substrate, the stray capacitance between pixel region interior pixel electrode and source electrode line (Csd) changes.This variation causes the charge generation face interpolation (in-plane difference) in the liquid crystal capacitor that is kept at each pixel.The face interpolation causes that the demonstration of liquid crystal display device is inhomogeneous.
This problem is produced by following condition: the unevenness of the exposure accuracy that in photoetching process, produces, and this unevenness makes the pass, position between source electrode line figure and the pixel electrode figure tie up to change in the viewing area.When making active-matrix substrate, the alignment precision in photoetching process between illuminating part and the non-illuminating part generally is about ± 0.3 μ m.
Summary of the invention
The purpose of this invention is to provide a kind of display device substrate, can reduce the demonstration unevenness of display device, particularly liquid crystal display device.
In order to realize aforementioned purpose, display device substrate according to the present invention comprises: one or more pixel electrodes, each pixel electrode are arranged on each overlapping position of signal wire and sweep trace, and signal wire and sweep trace are arranged on the insulated substrate; And be stacked in interlayer dielectric between signal wire and the pixel electrode, see by vertical direction that wherein signal wire is disposed thereon not to be provided with on the zone of pixel electrode, and between signal wire and pixel electrode the gap is set with respect to the surface of insulated substrate.
Be provided with according to this, see, between signal wire (source electrode line) and pixel electrode, provide the gap by vertical direction with respect to the surface of insulated substrate.When between signal wire (source electrode line) and pixel electrode, providing the gap in this manner, reduced the value relevant (Δ Δ β) with the demonstration unevenness of display device.When Δ Δ β reduces, also reduced the poor of pixel current potential effective value (Vd).The result is to reduce the demonstration unevenness of display device.
In addition, liquid crystal display device of the present invention comprises according to display device substrate of the present invention.
According to this setting, the display device substrate that is provided with in liquid crystal display device of the present invention is as follows: seen by the vertical direction with respect to the surface of insulated substrate, signal wire is disposed thereon not to be provided with on the zone of pixel electrode, and provides the gap between signal wire and pixel electrode.In this way, between signal wire and pixel electrode, provide the gap,, and reduce the poor of pixel current potential effective value (Vd) so that reduce the value relevant (Δ Δ β) with the demonstration unevenness of display device.Like this, be provided with, the liquid crystal display device of the demonstration unevenness that can reduce display device can be provided according to this.
Feature and advantage for a more complete understanding of the present invention are elaborated with reference to the accompanying drawings.
Description of drawings
Fig. 1 is the sectional view of the embodiment of expression liquid crystal display device of the present invention.
Fig. 2 is the planimetric map of the embodiment of expression display device substrate.
Fig. 3 is the sectional view along B-B ' the line intercepting of the substrate of display device shown in Fig. 2.
Fig. 4 is the sectional view of another embodiment of expression display device substrate of the present invention.
Fig. 5 is the distance from the pixel electrode to the source electrode line and the curve of the relation between the Δ Δ β value in the display device substrate.
Fig. 6 is the simple equivalent circuit figure of the active-matrix liquid crystal display device of expression example of the present invention.
Fig. 7 is the synoptic diagram of the relation between remarked pixel and the source electrode line, and this figure is used for representing the relation between example Δ Δ β of the present invention and the Vd difference.
Fig. 8 is the synoptic diagram that is illustrated in the various waveforms in the DOT reverse drive that the horizontal 2H cycle carries out, and this figure is used for representing the approximate representation of the Vd of example of the present invention.
Fig. 9 is the synoptic diagram of example of phase place of the source voltage of presentation graphs 8 in more detail.
Figure 10 is the synoptic diagram of the waveform (pixel 1A) of the Vd of presentation graphs 8.
Figure 11 is the synoptic diagram of the waveform (pixel 2A) of the Vd of presentation graphs 8.
Figure 12 represents the planimetric map of conventional display spare substrate.
Figure 13 is the sectional view of expression conventional display spare substrate.
Embodiment
[embodiment 1]
Introduce one embodiment of the present invention with reference to Fig. 1-3 below.
Notice that the present invention will be used for the active-matrix substrate of liquid crystal display device as the object lesson introduction of display device substrate.
Fig. 1 is the sectional view of the example of expression liquid crystal display device of the present invention.Liquid crystal display device 40 comprises active-matrix substrate 30 and counter substrate (counter substrate) 33, and liquid crystal layer 32 places between these substrates.Notice that liquid crystal layer 32 is clamped by the aligning film 31 of the aligning film of counter substrate 33 and active-matrix substrate 30.
Fig. 2 be single pixel of expression (i) active-matrix substrate 30 of the present invention (display device substrate) and (ii) with the part of this list pixel adjacent pixels.As shown in Figure 2, source electrode line (signal wire) 2 gate lines (sweep trace) 1 and pixel electrode 3 are stacked on the insulated substrate 10.Gate line 1 and source electrode line 2 are arranged to so that overlap mutually.In addition, pixel electrode 3 is arranged on gate line 2 and source electrode line 2 mutual each overlapping position that overlaps.Notice that insulated substrate 10 is arranged on the back side one side in Fig. 2, and is provided with like that shown in the sectional view of Fig. 3.
As shown in Figure 2, black matrix (hereinafter referred to as BM) (optical screen film) 8 is set, so that cover active component 14, gate line 1 and source electrode line 2.In addition, Fig. 2 shows: by the vertical direction with respect to the surface of insulated substrate 10, cover the BM 8 and pixel electrode 3 stacks of source electrode line 2.Equally, pixel electrode 3 ' and BM 8 superpose mutually.That is to say, cover the signal wire in the special pixel district the surface BM 8 and superpose mutually with the pixel electrode 3 ' of the adjacent setting of this special pixel, wherein signal wire places between BM 8 and the special pixel.In Fig. 2, show the width (distance) of the part of pixel electrode 3 ' and BM 8 mutual stacks by y.
In addition, as shown in Figure 2, when seeing that by vertical direction source electrode line is arranged in the zone that does not have pixel electrode with respect to the surface of insulated substrate 10, that is, and in the zone between pixel electrode 3 and the pixel electrode 3 '.In addition, gap (x ') is set between source electrode line 2 and pixel electrode 3 '.Equally, see, gap (x ') is set between source electrode line 2 and pixel electrode 3 by vertical direction with respect to the surface of insulated substrate 10.
Notice that " being seen by the vertical direction with respect to the surface of insulated substrate 10 " refers to " by the perpendicular projection of the target object that is provided with " on the surface of insulated substrate 10.More particularly, " by ... see (in view of) " be to obtain by the surface that will be connected to insulated substrate 10 from the end of the vertically extending line of target object.
For example, " pixel electrode 3 ' superpose mutually with BM 8 " refer to (i) be arranged on insulated substrate 10 lip-deep pixel electrode 3 ' perpendicular projection and (ii) be arranged on the surface of insulated substrate 10 and the perpendicular projection of the mutual BM 8 that superposes.In addition, be arranged on (i) in the perpendicular projection of the source electrode line 2 that is provided with on the surface of insulated substrate 10 and the (ii) gap between the perpendicular projection of the pixel electrode 3 ' that is provided with on the surface of insulated substrate 10 at the gap that provides between source electrode line 2 and the pixel electrode 3 ' (x).
In addition, " gap (x ' x) is set " and means that liquid crystal layer 32 does not have applies the zone of voltage from pixel electrode 3 or 3 ' to it between source electrode line 2 and pixel electrode 3 or 3 ', when applying voltage for pixel electrode 3 and 3 ', this zone refers to the zone between pixel electrode and the signal wire.
Then, how to briefly introduce Control current and voltage below.When selecting gate line 1, grid 4 is applied voltage.The electric current that puts on the Control of Voltage source electrode 5 of grid 4 and drain and flow between 6.That is, on the basis of signals of source electrode line 2 transmission, electric current flows to pixel electrode 3 from source electrode 5 through drain electrode 6, so that pixel electrode 3 is scheduled to show.Auxiliary capacitor line 7 additionally is provided, shows so that keep predetermined.
Then, introduce the technology of making active-matrix substrate 30 with reference to Fig. 2 and 3.Notice that Fig. 3 is the sectional view along the line B-B ' intercepting of Fig. 2.
At first, according to same process, gate line 1, grid 4 and auxiliary capacitor line 7 are formed on the insulated substrate 10 that is made of transparent insulator, wherein transparent insulator is made of glass etc.Then, gate insulating film 11 forms in its surface.Then, form active component 14 as thin film transistor (TFT) (TFT), source electrode line 2 and source electrode 5.Source electrode line 2 and source electrode 5 form according to same process.
Notice the active component 14 following formation shown in Fig. 2 and Fig. 3.At first, form active semiconductor layer 12.Then, form amorphous silicon (for example n type amorphous silicon) layer 13.In addition, form source electrode line 2, source electrode 5 and 6 (source electrode line 2 and source electrode 5 form according to same process) that drain.
Then, after forming active component 14, source electrode line 2 and source electrode 5, form BM (BM figure) 8.BM 8 can form by using the insulation course figure that is made of resin, and this insulation course figure for example has the light shield characteristic.As the examples of material that is used for BM, can on the stacked technology of dry film basis, use photosensitive resin material, wherein carbon is dispersed in this material.
The technology that forms BM 8 is as follows.At first, stacked dry film on the surface of substrate with black resin film, and transcribe black resin film by peeling off coverlay.Then, by use pattern mask to expose, develop and after cure, so that cover drain electrode 6, source electrode 5, active component 14, source electrode line 2, gate line 1 and auxiliary capacitor line 7, so that pixel electrode 3 and pixel electrode 3 ' form BM 8 (BM figure) thus with two-dimensional way (overlapping portion is illustrated by " y " among Fig. 3) stack mutually.Note, shown in Fig. 2 and 3, contact hole 9 and 9 ' with and peripheral part on do not form BM 8.
Then, form interlayer dielectric 15, so that cover the whole surface of insulated substrate 10 with BM 8.As the examples of material that is used for interlayer dielectric 15, can use the negative light-sensitive transparent resin.The specific examples of negative light-sensitive transparent resin comprises acryl resin, epoxy resin, polyurethane resin and polyimide resin.Yet the material that is used for interlayer dielectric 15 is not limited to resin, can use as SiN on CVD (chemical vapour deposition) technology basis
xThe material of film (silicon nitride film), this will produce the specific inductive capacity and the transmittance of wishing.
Then, form contact hole 9, this contact hole will the drain electrode 6 of (i) active component 14 and (ii) pixel electrode be connected to each other, and form contact hole 9 ', this contact hole 9 ' contacts the auxiliary capacitor line 7 that is used for to pixel electrode 3 generation auxiliary capacitors.Afterwards, form the transparent pixels electrode, so that apply contact hole 9 and 9 '.Then, the transparent pixels electrode is carried out composition,, obtain pixel electrode 3 and 3 ' thus so that provide bidimensional away from source electrode line 2 apart from x.
In the present embodiment, aluminium (Al) is used as the material of gate line 1 and source electrode line 2.But,, can use the material of any metal as gate line 1 and source electrode line 2 as long as obtain desirable line resistance.For example, can also use metal such as tantalum (Ta), titanium (Ti), chromium (Cr) etc. and alloy thereof material as gate line 1 and source electrode line 2.In addition, can also use the material of the film of wherein stacked TaN/Ta/TaN and Ti/Al/Ti etc. as gate line 1 and source electrode line 2.In addition, not only can use the common metal film but also can use nesa coating for example such as ITO (tin indium oxide) as the material of source electrode line 2.
In addition, in the present embodiment, amorphous silicon film transistor is used as active component (on-off element) 14.But,,, can use microcrystalline silicon thin film transistor, polycrystalline SiTFT, CGC (discontinuous crystal grain crystalline silicon) thin film transistor (TFT), MIM (metal-insulator-metal) etc. by identical mode as on-off element.
As the resin bed of BM 8, use carbon to be dispersed in wherein transfer membrane type photosensitive resin material, this material has 3.0 OD value and the thickness of 2.5 μ m.But this material is not limited to this resin material, can also use other material that can produce desirable OD value, cone shape and specific inductive capacity.As the material of BM 8, for example can use pigment-dispersing type black resist etc.Notice that OD is the abbreviation of " optical density (OD) ".In addition, the transmissivity of OD value representation material.In addition, the OD value of material is big more, and transmissivity is more little.
In addition, ITO is used as pixel electrode 3 and 3 ', but can also use transparent pixels electrode such as IZO (indium zinc oxide) as pixel electrode 3 and 3 '
In addition, in the present embodiment, provide BM 8 so that cover drain electrode 6, source electrode 5, active component 14, source electrode line 2, gate line 1 and auxiliary capacitor line 7, and with pixel electrode 3 and 3 ' stack, but this set is not limited thereto.BM 8 can be arranged to cover at least the surface of source electrode line 2.In this case, be preferably as follows BM 8 is set: as shown in Figure 2, see by vertical direction with respect to the surface of insulated substrate 10, between source electrode line 2 and each pixel electrode 3 and 3 ', provide the gap, and the gap that BM 8 covers between the mutual adjacent pixel electrodes 3 and 3 ', be adjacent each other and source electrode line 2 places gap between therebetween the pixel electrode 3 and 3 ', and the BM 8 that covers the surface of source electrode line 2 superposes (still with pixel electrode 3 and 3 ', can so be provided with, make their not superpose mutually).
At BM 8 and pixel electrode 3 and 3 ' mutually under the situation of stack,, when in aligning, departing from, can prevent the light leakage and do not break down even when using composition BM 8 such as photoetching.
That is, can so be provided with: in the middle of drain electrode 6, source electrode 5, active component 14, source electrode line 2, gate line 1 and auxiliary capacitor line 7, BM 8 covers the surface of source electrode line 2 at least, leaks so that can suppress, preferably prevent light.Note, can also so be provided with: BM 8 is provided,, still preferably provides BM 8,, and preferably provide the BM 8 on the surface of going back covering gate polar curve 1 so that also cover the surface of active component 14 so that cover the surface of source electrode line 2 at least.
Then, introduce width y, gap x and the x ' of the overlapping portion shown in Fig. 2 with reference to Fig. 3.X1 ' shown in Fig. 3 is the straight line that the end (being positioned at the end on the side that forms source electrode 5 and source electrode line 2) from pixel electrode 3 extends vertically up to the surface of insulated substrate 10.X2 ' is the straight line that (is positioned at the end on active component (on-off element) 14 1 sides) from the end of insulated source polar curve 2 and extends vertically up to the surface of insulated substrate 10.X ' is the distance (bee-line) between two line x1 ' and the x2 '.In other words, this shows: between the end of the end of source electrode line 2 (being positioned at the end on the side of active component (on-off element) 14) and pixel electrode 3 (being positioned at the end on the side that forms source electrode 5 and source electrode line 2), promptly provide gap x ' between the vertical projection of the vertical projection of pixel electrode and source electrode line 2.In other words, x ' equals the end face that (i) have pixel electrode 3 (being positioned at the end face on the side that forms source electrode 5 and source electrode line 2) and perpendicular to the vertical plane on the surface of insulated substrate 10, and (ii) has the end face (being positioned at the end face on active component (on-off element) 14 1 sides) of source electrode line 2 and perpendicular to the distance between the vertical plane on the surface of insulated substrate 10.
In addition, the x1 shown in Fig. 3 is the straight line that end (be positioned at and form on source electrode line one side, be i.e. the end that is oppositely arranged with the end of pixel electrode 3) from pixel electrode 3 ' extends vertically up to the surface of insulated substrate 10.X2 is the straight line that (is positioned at the other end on pixel electrode 3 ' one side) from the other end of source electrode line 2 and extends vertically up to the surface of insulated substrate 10.In addition, x is the distance (bee-line) between two line x1 and the x2.In other words, this expression: at (i) and pixel electrode 3 adjacent and source electrode line 2 place therebetween pixel electrode 3 ' and (ii) between the source electrode line 2, promptly provide gap x between the vertical projection of the vertical projection of source electrode line 2 and pixel electrode 3.In other words, x equals the end face that (i) have pixel electrode 3 ' (being positioned on source electrode line one side promptly the end face that the end face with pixel electrode 3 is oppositely arranged) and perpendicular to the vertical plane on the surface of insulated substrate 10, and (ii) has the end face (being positioned at the end face on pixel electrode 3 ' one side) of source electrode line 2 and perpendicular to the distance between the vertical plane on the surface of insulated substrate 10.
X and x ' are big more, reduce to show that unevenness is effective more.Wish to be provided with the value of x and x ', preferably be not less than 1 μ m, more preferably be not less than 5 μ m, still preferably be not less than 10 μ m, especially preferably be not less than 15 μ m, so that by reducing the demonstration unevenness that the value (Δ Δ β) relevant with the demonstration unevenness of display device reduces display device.
In other words, wish to be provided with the value of x and x ',,, still preferably be not more than 0.01 more preferably no more than 0.04 so that value Δ Δ β preferably is not more than 0.08.
But, when x and x surpass 10 μ m, particularly during 15 μ m, value Δ Δ β fully reduces when it is saturated, so that can not obtain the Δ Δ β reduction effect of the increase of corresponding x and x '.Simultaneously, along with x and x ' become big, the aperture is than descending.Then, about x and x ', aforementioned value is set to lower limit, its upper limit is arranged on preferred 20 μ m, more preferably in the scope of 15 μ m, particularly, x and x ' are arranged in the scope that is not less than 1 μ m and is not more than 20 μ m for example, so that can prevent the aperture than descending, fully improve the demonstration unevenness of display device simultaneously.
Y1 shown in Fig. 3 extends vertically up to the (ii) straight line on the surface of insulated substrate 10 from the end that (i) is positioned at the BM 8 on pixel electrode 3 ' one side.Fig. 3 represents the straight line y1 that intersects with pixel electrode 3 '.That is, pixel electrode 3 ' and BM 8 superpose mutually.In addition, straight line y2 shown in Fig. 3 (identical) and the straight line that extends vertically up to the surface of insulated substrate 10 from the end of pixel electrode 3 ' with X1.In addition, y equals the distance (bee-line) between two line y1 and the y2.In other words, y equals (i) and has the end face of BM 8 so that be positioned on the side of pixel electrode 3 ' and perpendicular to the vertical plane on the surface of insulated substrate 10, and (ii) has the end face (be positioned on the side of source electrode line promptly and end face that the end face of pixel electrode 3 is oppositely arranged) of pixel electrode 3 ' and perpendicular to the distance between the vertical plane on the surface of insulated substrate 10.In other words, y represent certain pixel BM 8 and with the width of the overlapping portion of this pixel adjacent pixel electrodes 3 ' stack.
Consider the alignment precision in the lithography step when forming BM 8, y preferably is set is not less than 0.6 μ m.In order to suppress the aperture, y preferably is set for being not more than 5 μ m than descending.The value of y can be arranged on and be not less than 0.6 μ m and be not more than in the scope of 5 μ m, so that can and not break down with BM 8 these gaps of covering, also can keep enough aperture ratios when departing from even take place to aim at simultaneously in lithography step.
As mentioned above, the active-matrix substrate of present embodiment is that the display device substrate is arranged so that pixel electrode 3 is arranged on the surface that is different from the surface with source electrode line 2.See that by vertical direction source electrode line 2 is arranged on the zone that does not have pixel electrode 3, and between source electrode line 2 and pixel electrode 3, provide the gap with respect to the surface of insulated substrate 10.According to this layout, can prevent that the stray capacitance (Csd) between pixel electrode 3 and source electrode line 2 is inhomogeneous in the viewing area.Like this, under active-matrix substrate 30 is used in situation in the liquid crystal display device 40, can reduce the demonstration unevenness.
In addition, in the present embodiment, BM 8 is arranged on active-matrix substrate 30 1 sides, so that improve the aperture ratio.But, can also on the counter substrate 33 that is oppositely arranged with active-matrix substrate, provide BM 8, wherein liquid crystal layer 32 places between counter substrate 33 and the active-matrix substrate.BM 8 is arranged on the active-matrix substrate 30, so that can improve the demonstration unevenness that is produced by the inhomogeneous capacitor parasitics (Csd) in the viewing area, improves output thus.Note that BM8 is arranged on the side of active-matrix substrate 30, show unevenness and output so that can improve, and can improve aforesaid aperture ratio.Notice that arbitrary substrate can have BM 8, can be arranged so that perhaps a substrate has BM 8, and another substrate relative with this substrate also has BM 8.
In addition, present embodiment has explained that mainly BM 8 wherein is arranged on the layout on the active-matrix substrate 30, but display device substrate according to the present invention is not limited thereto.Pixel electrode is arranged on the surface that is different from the surface with signal wire, and sees that by the vertical direction with respect to the surface of insulated substrate signal wire is arranged on the zone that does not have pixel electrode, and provides the gap between signal wire and pixel electrode.As long as the display device substrate is set in this way, can be arranged to not provide BM.In other words,, see, between signal wire and pixel electrode, provide the gap,, reduce the poor of pixel current potential effective value (Vd) thus so that the value Δ Δ β limit relevant with showing unevenness is little by vertical direction with respect to the surface of insulated substrate according to the present invention.The result is to reduce the demonstration unevenness of display device.
Generally speaking, by according to signal (voltage) the control liquid crystal that puts on pixel electrode, make liquid crystal display device show predetermined image.Like this, voltage does not put on the zone that does not have pixel electrode, particularly, is seen by the vertical direction with respect to the surface of insulated substrate, voltage does not put on the liquid crystal layer in the gap between signal wire and pixel electrode, therefore is difficult to sometimes control according to desirable mode.Like this, in the display device of normal white pattern, wherein this white mode will cause transmittance when not applying voltage, white mode will make the light conductively-closed when applying voltage, there is such possibility: when pixel shows black state, between pixel electrode and signal wire, produce white states, so the contrast of display image descends.
But, in the display device of normal black mode, wherein this black mode will cause transmittance when applying voltage, show black state in the liquid crystal layer in the gap between signal wire and pixel electrode continuously, so the contrast of display image can not descend.Like this, when the display device substrate is used as the display device substrate of normal black mode, needn't on placing gap between therebetween the pixel electrode, adjacent each other and signal wire provide optical screen film.
Simultaneously, when the display device substrate is used as the display device substrate of normal white pattern, see by vertical direction with respect to the surface of insulated substrate, the preferred light screened film covers the surface of signal wire and the gap between signal wire and the pixel electrode, and promptly adjacent each other and signal wire places the gap between therebetween the pixel electrode.Like this, can prevent the contrast decline of display image.In addition, carry out the response speed of write operation in the time of can being increased in pixel display white state by display device.This is because be arranged in the gap and the very slow part of response speed is hidden.Therefore, much less, display device substrate according to present embodiment with optical screen film, particularly be that active-matrix substrate 30 according to present embodiment can preferably be used in the display device of normal black mode, and can preferably in the display device of normal white pattern, use display device substrate (active-matrix substrate 30).
Note, under the display device substrate with optical screen film according to present embodiment is used in situation in the display of normal black mode, when pixel shows black state, be positioned at the very slow black part of gap and response speed and hidden, therefore can improve the response speed of carrying out write operation by display device by optical screen film.
It is to be noted, about display device according to present embodiment, by using common means, the for example direction by determining (i) polarization plates and (ii) liquid crystal material, perhaps use the similar mode can the optimization display device, so that corresponding above-mentioned pattern (normal white pattern, normal black mode).
In addition, present embodiment has been explained the active-matrix substrate that is used for liquid crystal display device as the specific example of display device substrate, but the invention is not restricted to this.The display device substrate can be used as the display device substrate that is used for liquid crystal display device display device in addition.
[embodiment 2]
Introduce an embodiment of the invention with reference to Fig. 2-4 below.Notice that for convenience of explanation, the parts that same tag is represented have the parts identical functions shown in the accompanying drawing with embodiment 1, and omit its explanation.In addition, the characteristic of each described in the embodiment can with the property combination described in the present embodiment.
The manufacture method that below introduction is comprised the active-matrix substrate 30 of two-layer or multilayer interlayer dielectric.
At first, form gate line 1, grid 4 and auxiliary capacitor line 7 according to same process on the substrate 10 that is made of insulator, wherein said insulator is made of glass etc.Then, form gate insulating film 11 in its surface.
Then, form active component 14 as thin film transistor (TFT) (TFT), source electrode line 2 and source electrode 5.Source electrode line 2 and source electrode 5 form according to same process.
Should point out that the active component 14 shown in Fig. 2 and Fig. 4 is following formation.At first, form active semiconductor layer 12.Then, form amorphous silicon (for example n type amorphous silicon) layer 13.In addition, form source electrode line 2, source electrode 5 and 6 (source electrode line 2 and drain electrode 6 form according to same process) that drain.
Then, form second interlayer dielectric 20, and carry out composition with respect to second interlayer dielectric 20 according to CVD technology.On second interlayer dielectric 20, form the contact hole 9 that the drain electrode 6 of active component 14 is connected to pixel electrode 3, and form the contact hole 9 ' that the auxiliary capacitor line 7 that will be used to produce auxiliary capacitor is connected to pixel electrode 3.
Then, form BM 8.In the present embodiment, tantalum (Ta) is used as the material of BM 8.Particularly, at first, form the Ta film by using sputter equipment.Then, the Ta film is carried out composition,, and, obtain BM 8 thus with two-dimensional way and pixel electrode 3 and 3 ' stack so that cover active component 14, source electrode line 2, gate line 1 and auxiliary capacitor line 7.Notice that composition is the photoetching composition by using pattern mask to carry out.Note, shown in Fig. 2 and 4, BM8 be not formed on contact hole 9 and 9 ' with and peripheral part on.
Afterwards, form interlayer dielectric 15, so that utilize the negative light-sensitive transparent resin to cover the whole surface of insulated substrate 10 with BM 8.Then, on interlayer dielectric 15, form contact hole 9 and 9 '.Then, form the transparent pixels electrode, so that apply contact hole 9 and 9 '.Then, the transparent pixels electrode is carried out composition, obtain pixel electrode 3 and 3 ' thus.Because this composition can obtain the bidimensional distance between source electrode line 2 and each pixel electrode 3 and 3 '.
In the present embodiment, as shown in Figure 4, stacked two-layer (interlayer dielectric 15 and second interlayer dielectric 20) interlayer dielectric.That is to say,, provide interlayer dielectric as by stack two-layer or that multilayer constitutes.
In addition, the negative light-sensitive transparent resin is used as interlayer dielectric 15, but this layout is not limited thereto.Can use other material, as SiN based on CVD technology
xFilm (silicon nitride film), this material for example can be realized desirable specific inductive capacity and transmissivity.In addition, based on the SiN of CVD technology
xFilm is used as second interlayer dielectric 20, but also can use other negative light-sensitive transparent resin.The example of photosensitive transparent resin comprises acryl resin, epoxy resin, polyurethane resin, polyimide resin etc.
In addition, stacked BM 8 (optical screen film) between the orlop (interlayer dielectric 20) of the superiors' (interlayer dielectric 15) that constitute this interlayer dielectric and this interlayer dielectric of formation.In the present embodiment, use metal to form BM 8.Particularly, use the Ta that forms according to sputter to form BM 8.Yet the material that is used for BM 8 is not limited to Ta.As the material that is used for BM 8, can use Ta material in addition in this example, for example, can use as Cr (chromium), in embodiment 1, be used for the material of BM etc.As mentioned above, BM (optical screen film) 8 is stacked between the superiors' (interlayer dielectric 15) that constitute this interlayer dielectric and the orlop (interlayer dielectric 20) that constitutes this interlayer dielectric, promptly, BM 8 is stacked through interlayer dielectric, therefore the resin that can use metal or have insulating property when forming BM 8.Like this, needn't use special material (insulating material).
Note, in this example, with the same in embodiment 1, wish x shown in the following Fig. 4 of setting and x ' value: its lower limit is preferably 1 μ m, and more preferably 5 μ m still are preferably 10 μ m, be preferably 15 μ m especially, its upper limit is preferably 20 μ m, more preferably in the scope of 15 μ m.Wish that y is set is being not less than 0.6 μ m to the scope that is not more than 5 μ m in, wherein y represents the BM 8 of certain pixel and the width of the overlapping portion that superposes with this pixel adjacent pixel electrodes 3 '.
In addition, in the present embodiment, needless to say, according to the display device substrate with optical screen film of present embodiment, specifically for the active-matrix substrate 30 according to present embodiment can preferably be used in the display device of normal black mode, and preferred this display device substrate (active-matrix substrate 30) that in the display device of normal white pattern, uses.
As mentioned above, display base plate of the present invention comprises: one or more pixel electrodes, each pixel electrode are arranged on each overlapping position of signal wire and sweep trace, and wherein signal wire and sweep trace are arranged on the insulated substrate; And be stacked in interlayer dielectric between signal wire and the pixel electrode, and see that by vertical direction signal wire is arranged on the zone that pixel electrode is not set with respect to the surface of insulated substrate, and between signal wire and pixel electrode, provide the gap.
As mentioned above, display device substrate of the present invention so is provided with, and making provides the gap between signal wire and pixel electrode.Like this, reduced the value Δ Δ β relevant with the demonstration unevenness of display device.When reducing Δ Δ β, the difference of pixel current potential effective value (Vd) also reduces.The result is to reduce the demonstration unevenness of display device.
In addition, display base plate of the present invention is arranged to: seen that by the vertical direction with respect to the surface of insulated substrate optical screen film covers the surface of signal wire (source electrode line) and the gap between signal wire and the pixel electrode.Like this, except aforementioned effect,, can present higher display performance when this substrate is used in the display device so that when preventing that light from leaking.
In addition, display base plate of the present invention also comprises: the active component that is arranged on each overlapping position of signal wire and sweep trace; At least cover the optical screen film on the surface of the central signal wire of signal wire, active component and sweep trace, see by vertical direction that wherein the gap between adjacent each other and pixel electrode that signal wire is therebetween is covered by optical screen film with respect to the surface of insulated substrate.
According to this layout,, can present higher display performance to such an extent as to be used in when preventing in the display device that light from leaking when this substrate.
In addition, can also be arranged so that display device substrate of the present invention comprises: the active component that is arranged on each overlapping position of signal wire and sweep trace; At least cover the optical screen film on the surface of the signal wire in the middle of signal wire, active component and the sweep trace, wherein see, (i) cover the optical screen film and the (ii) pixel electrode mutual superposition on the surface of signal wire by vertical direction with respect to the surface of insulated substrate.
According to this layout,, can present higher display performance when this substrate is used in the display device so that when preventing that light from leaking.Particularly, according to this layout, optical screen film and pixel electrode superpose mutually, when taking place to aim in based on the composition of lithography step etc. when departing from, can prevent that light from leaking and can not break down.
In addition, display device substrate of the present invention can also be set, so that comprise: be arranged on the active component on each overlapping position of signal wire and scanning; Be used to the contact hole that allows active component and pixel electrode to contact with each other; And optical screen film, it is arranged to so that cover the surface of active component, signal wire and sweep trace, is wherein seen by the vertical direction with respect to the surface of insulated substrate, (i) covers the optical screen film and the (ii) pixel electrode mutual superposition on the surface of signal wire.
According to this layout,, can present higher display performance when this substrate is used in the display device so that when preventing that light from leaking.Particularly, according to this layout, optical screen film and pixel electrode superpose mutually, when taking place to aim in based on the composition of lithography step etc. when departing from, can prevent that light from leaking and can not break down.
In addition, according to this layout, active component and pixel electrode can contact with each other by contact hole, and pixel electrode is arranged on the interlayer dielectric, so that signal wire (source electrode line) can be separated with pixel electrode, make them not be positioned on the identical faces.The result is, except aforementioned effect, can prevent between pixel electrode and the signal wire (source electrode line) short circuit be connected fault, prevent that thus output from descending.
In addition, can so be provided with: display base plate of the present invention also comprises: the active component that is arranged on each overlapping position of signal wire and sweep trace; Be used to the contact hole that allows active component and pixel electrode to contact with each other; Optical screen film with the surface that covers active component, signal wire and sweep trace, wherein: interlayer dielectric is by stack two-layer or that multilayer constitutes, optical screen film is stacked between the superiors and orlop that constitute interlayer dielectric, and see that by vertical direction the gap between adjacent each other and pixel electrode that signal wire is therebetween is covered by optical screen film with respect to the surface of insulated substrate.
Arrange that according to this interlayer dielectric that is stacked between signal wire and the pixel electrode is by stack two-layer or that multilayer constitutes.In addition, optical screen film is stacked between the superiors and orlop that constitute interlayer dielectric.The result is to use special material to form optical screen film.Like this, according to this layout, except aforementioned effect, not only can use resin for example can also use metal as the material of optical screen film with light shield performance and insulating property.
In addition, can so be provided with: display device substrate of the present invention also comprises: the active component that is arranged on each overlapping position of signal wire (source electrode line) and sweep trace (gate line); Be arranged to cover at least the optical screen film on the surface of the signal wire in the middle of signal wire, active component and the sweep trace, wherein interlayer dielectric is by stack two-layer or that multilayer constitutes, optical screen film is stacked between the superiors and orlop that constitute interlayer dielectric, and see by the vertical direction with respect to the surface of insulated substrate, (i) cover the optical screen film and the (ii) pixel electrode mutual superposition on the surface of signal wire.
Arrange that according to this interlayer dielectric that is stacked between signal wire and the pixel electrode is by stack two-layer or that multilayer constitutes.In addition, optical screen film is stacked between the superiors and orlop that constitute interlayer dielectric.The result is to use special material to form optical screen film.Like this, according to this layout, except aforementioned effect, not only can use resin for example can also use metal as the material of optical screen film with light shield performance and insulating property.
In addition, display device substrate of the present invention can be set, so that comprise: the active component that is arranged on each overlapping position of signal wire (source electrode line) and sweep trace (gate line); Be used to the contact hole that allows active component and pixel electrode to contact with each other; Optical screen film with the surface of being arranged to cover active component, signal wire and sweep trace, wherein: interlayer dielectric is by stack two-layer or that multilayer constitutes, optical screen film is stacked between the superiors and orlop that constitute interlayer dielectric, and see by the vertical direction with respect to the surface of insulated substrate, (i) cover the optical screen film and the (ii) pixel electrode mutual superposition on the surface of signal wire.
Arrange that according to this interlayer dielectric that is stacked between signal wire and the pixel electrode is by stack two-layer or that multilayer constitutes.In addition, optical screen film is stacked between the superiors and orlop that constitute interlayer dielectric.The result is to use special material to form optical screen film.Like this, according to this layout, except aforementioned effect, not only can use resin for example can also use metal as the material of optical screen film with light shield performance and insulating property.
In addition, display device substrate of the present invention is set preferably also, so that optical screen film is made of the resin with insulating property.
According to this layout, can relatively easily form optical screen film.Like this, except aforementioned effect, can also disperse the photosensitive resin material of carbon to form optical screen film therein based on the stacked technology of dry film by for example using.
In addition, display device substrate of the present invention is set preferably, makes optical screen film constitute by metal.
Arrange according to this, be easy to form the optical screen film of shielded from light effectively.
In addition, as mentioned above, display device substrate of the present invention is arranged to: when the gap is being not less than 1 μ m in the scope that is not more than 20 μ m the time, along with the saturated of it can reduce to be worth Δ Δ β fully.Like this, the gap is arranged in the aforementioned range, so that can prevent the aperture than descending, fully improves the demonstration unevenness of display device simultaneously.
Can also be arranged so that so that display device substrate of the present invention comprises: the active component that is arranged on each overlapping position of signal wire and sweep trace; Be used to the contact hole that allows active component and pixel electrode to contact with each other; And be stacked in the superiors that constitute interlayer dielectric and the optical screen film between the orlop, so that cover the surface of signal wire, wherein: each of one or more contact holes is arranged on the interlayer dielectric between signal wire and the optical screen film, and the metal optical screen film is connected to signal wire through contact hole.
In addition, liquid crystal display device of the present invention can be set, so that comprise display device substrate of the present invention.
According to this layout, the display device substrate that provides in liquid crystal display device of the present invention is such: seen by the vertical direction with respect to the surface of insulated substrate, signal wire is arranged on the zone that pixel electrode is not provided, and provides the gap between signal wire and pixel electrode.In this way, between signal wire and pixel electrode, provide the gap, so that reduce the value relevant (Δ Δ β) with the demonstration unevenness of display device.When Δ Δ β reduced, the difference of pixel current potential effective value (Vd) also reduced.Like this, arrange, the liquid crystal display device of the demonstration unevenness that can reduce display device can be provided according to this.
As mentioned above, display device substrate of the present invention can improve the demonstration unevenness that is caused by the uneven phenomenon in the viewing area of the stray capacitance between pixel electrode and the signal wire.This display device substrate preferably is used in the display device as active matrix-type liquid crystal display device spare.For example, this display device substrate can be widely used in the various electronic installations: OA device such as personal computer, AV device such as televisor and mobile phone etc.
Note, in the appended claims scope, can change the present invention in a lot of modes.Should be included in the technical scope of the present invention by the combination embodiment that disclosed technological means obtains in different examples and embodiment owing to need.
[example]
Introduce example of the present invention with reference to Fig. 5-13 below.
This example shows the stray capacitance (Csd) that is adjusted between pixel electrode and the source electrode line so that reduce unevenness in the viewing area, thereby reduces the situation that shows unevenness.
Fig. 5 shows and shows Δ Δ β value that unevenness is relevant and the relation between the gap (distance) between pixel electrode and the source electrode line.In addition, Fig. 8 shows the simple equivalent circuit figure of active-matrix liquid crystal display device.
In Fig. 5, Z-axis is represented Δ Δ β value, the value of the gap x between transverse axis remarked pixel electrode and the source electrode line.Note, when x less than zero the time, mean the stack mutually to a certain extent of source electrode line and pixel electrode.
Δ Δ β value under following condition shown in the calculating chart 5.In this example, Fig. 2 and x shown in 3 and x ' are set to identical value (x=x '), obtain thus by the value shown in the curve of Fig. 5.In addition, the thickness of BM is set at 1.0 μ m, and the thickness of interlayer dielectric is set at 2.5 μ m, and v=2.0 μ m.The acryl resin (specific inductive capacity is 4.0) that uses carbon to be distributed to wherein forms BM,, and use acrylic acid transparent resin (specific inductive capacity is 3.7) to form interlayer dielectric.In addition, in the photoetching process of carrying out pixel ITO photoetching, the alignment difference between light radiating portion and the non-smooth radiating portion (relative mistake between source electrode figure and the pixel ITO figure) is set at 0.1 μ m.In addition, the difference among the pixel 1A is 0 μ m, and the difference among the pixel 2A is 0.1 μ m (direction that diminishes at its source electrode).In addition, the input tone is set at medium tone, and the input tone voltage is set at Vs=2.5V (TN product).Image component (pixel) size is set at 15 " XGA (image component (pixel) spacing is 99 μ m).
According to curve shown in Figure 5, the x value is big more, and Δ Δ β value is more little.
Then, take a reverse drive as an example, introduce the relation between Δ Δ β value (%) and the demonstration unevenness below.Pixel capacitance is Clc, and the pixel auxiliary capacitor is Csc, and the stray capacitance between gate line and the pixel electrode is Cgd, and the stray capacitance between source electrode line and the pixel electrode is Csd.In addition, Fig. 8 is the simple equivalent circuit figure of expression active-matrix liquid crystal display device.In addition, by with Clc, Ccs, Cgd and Csd addition calculation Cpix (Cpix=Clc+Ccs+Cgd+Csd).In addition, β is set as follows:
β＝Csd/Cpix
In a reverse drive system, Csd is divided into (i) by the capacitive component Csd1 of the source electrode line generation that drives the object pixel electrode with (ii) by the capacitive component Csd2 of driving with the source electrode line generation of object pixel electrode adjacent pixel electrodes.In addition, the source signal amplitude is Vspp.In addition, Δ β is set as follows: Δ β=(Csd1-Csd2)/Cpix.At this moment, the pixel current potential effective value Vd that obtains after charging to pixel with source voltage Vs can be represented by following expression.
(approximate expression) Vd Vs-Vspp * Δ β/2
Show that unevenness is to be produced by the poor of Vd.Introduce the difference of Vd and the relation between the Δ Δ β below with reference to Fig. 9, the synoptic diagram of pixel and source electrode line wherein has been shown among Fig. 9.As shown in Figure 9, the source electrode line that is connected to the pixel electrode of pixel 1A through active component is S1, and is S2 through the source electrode line that active component is connected to the pixel electrode of pixel 2A.Equally, the source electrode line that is connected to pixel NA through active component is S (N).In addition, be used for being defined as " the corresponding utmost point " to the source electrode line of corresponding (special) pixel charging.In addition, having pixel electrode and capacitor is defined as " non-corresponding source " still for the source electrode line of corresponding (special) pixel charging.
In Fig. 9, the relation between corresponding source among the pixel 1A and the non-corresponding source is as follows.That is, corresponding source is S1 (corresponding source=S1), and non-corresponding source is S2 (non-corresponding source=S2).Relation between corresponding source among the pixel 2A and the non-corresponding source is as follows: corresponding source=S2, non-corresponding source=S3.Equally, the relation between corresponding source among the pixel NA and the non-corresponding source is as follows: corresponding source=S (N), non-corresponding source=S (N+1).
In addition, the electric capacity between pixel electrode and the corresponding source (Csd correspondence) is Csd11, that is, and and the electric capacity=Csd correspondence=Csd11 between pixel electrode and the non-corresponding source.In addition, the electric capacity between pixel electrode and the non-corresponding source (the non-correspondence of Csd) is Csd12, that is, and and the non-correspondence=Csd12 of electric capacity=Csd between pixel electrode and the non-corresponding source.
The Δ β of the pixel electrode among the pixel 1A is Δ β 1, and the Δ β of the pixel electrode among the pixel 2A is Δ β 2.At this moment, Δ β 1 is as follows: the non-correspondence/Cpix of Δ β 1=Csd correspondence/Cpix-Csd, that is, and Δ β 1=(Csd11-Csd12)/Cpix.Equally, Δ β 2=(Csd22-Csd23)/Cpix.
Under by situation in mutually different aspect the polarity and the driving that carry out in source adjacent each other, the same with a reverse drive, than (Csd-corresponding non-correspondence/Cpix=β-corresponding non-correspondence), determine display performance (import tone voltage Vs and apply poor=effective value Vd between the tone voltage) about Cpix according to poor (the non-correspondence of β correspondence-β=Δ β) between pixel electrode-corresponding source electric capacity (Csd-correspondence) and other source electric capacity of pixel (the non-correspondence of Csd-).For example, under the situation of any reason, particularly, the reason that alignment difference (being generally ± 0.3 μ m) between light radiating portion and the non-smooth radiating portion takes place in photoetching process produces pixel electrode among following condition (i) the pixel 1A and the relation of the position between the source electrode line and is different from pixel electrode and the relation of the position between the source electrode line among the (ii) pixel 2A, and the value of Δ β 1 is different from the value of Δ β 2.
As mentioned above, when having Δ β poor, between the Vd of the Vd of pixel 1A and pixel 2A, create a difference, therefore produce unevenness (luminance difference).In other words, can compare relatively according to Δ Δ β=Δ β 1-Δ β 2 about unevenness (luminance difference).Note, when when using aforementioned expression formula to explain this point, below (calculating formula 1) remain unchanged.Therefore, Δ Δ β becomes more little, and the difference of Vd becomes more little.The result is to have reduced the demonstration unevenness.
[calculating formula 1]
The Δ β (Δ β 2) of Δ β of pixel electrode 1 (Δ β 1) and pixel electrode 2 is as follows:
Δβ1＝(Csd11-Csd12)/Cpix
Δβ2(Csd22-Csd23)/Cpix
In addition, the Vd of pixel electrode 1 is Vd1, and the Vd of pixel electrode 2 is Vd2.At this moment, aspect effective value, the poor corresponding brightness between Vd1 and the Vd2 is poor.This will cause the demonstration unevenness.
Official post between Vd1 and the Vd2 is represented with the following approximation relation formula of Vd.
Vd1-Vd2(Vs-(Vspp/2)×Δβ1)-(Vs-(Vspp/2)×Δβ2)
＝(Vspp/2)×(Δβ2-Δβ1)
(Vspp/2)×ΔΔβ
input tone voltage Vs * Δ Δ β
Incidentally, when calculating Vd, use aforementioned approximation relation formula.Introduce the approximation relation formula of Vd below with reference to Fig. 8-11.Fig. 8 show horizontal 2H round-robin DOT reverse drive (each frame oppositely) in waveform.Fig. 9 has only introduced the example of the phase place of the source voltage shown in Fig. 8.Figure 10 has only introduced the example (pixel 1A) of the Vd waveform shown in Fig. 8.Figure 11 has only introduced the example (pixel 2A) of the VD waveform shown in Fig. 8.
As shown in figure 10, when change in voltage was very little, Vd was substantially equal to the mean value of Vs and Vs+ Δ Vs.In addition, as shown in figure 10, can think that Δ Vs is the summation=source change in voltage * electric capacity of the Cpix ratio of Δ Vs.The result is that in example shown in Figure 10, Δ Vs=-Vspp * Δ β 1, Vd1 can approximate Vd1=Vs-(Vspp/2) * Δ β 1.Equally, in example shown in Figure 11, Vd2 can approximate Vd2=Vs-(Vspp/2) * Δ β 2.
The front by the agency of the present invention, should be appreciated that and can change the present invention in a lot of modes.This change is not considered to break away from the spirit and scope of the present invention, and all such modifications all are conspicuous to those skilled in the art, and is tending towards falling in the scope of appended claims.
Claims (20)
1, a kind of display device substrate comprises:
One or more pixel electrodes (3,3 '), each pixel electrode are arranged on each overlapping position of signal wire (2) and sweep trace (1), and signal wire and sweep trace are arranged on the insulated substrate (10); With
Be stacked in the interlayer dielectric (15,20) between signal wire (2) and the pixel electrode (3,3 '), described display device substrate is characterised in that:
See that by vertical direction signal wire (2) is disposed thereon not to be provided with on the pixel electrode zone of (3,3 '), and between signal wire (2) and pixel electrode (3,3 ') gap (x, x ') is set with respect to the surface of insulated substrate (10).
2, according to the display device substrate of claim 1, it is characterized in that seeing by vertical direction with respect to the surface of insulated substrate (10), gap (x, x ') between the surface of signal wire (2) and signal wire (2) and the pixel electrode (3,3 ') is covered by optical screen film (8).
3,, it is characterized in that optical screen film (8) is made of the resin with insulating property according to the display device substrate of claim 2.
4, according to the display device substrate of claim 1, it is characterized in that comprising:
Be arranged on the active component (14) at each overlapping position of signal wire (2) and sweep trace (1);
Optical screen film (8), it is arranged to cover at least the surface of the central signal wire (2) of signal wire (2), active component (14) and sweep trace (1), wherein
See by vertical direction, place the gap (x, x ') between therebetween the pixel electrode (3,3 ') to be covered by optical screen film (8) at adjacent each other and signal wire (2) with respect to the surface of insulated substrate (10).
5,, it is characterized in that optical screen film (8) made by the resin with insulating property according to the display device substrate of claim 4.
6, according to the display device substrate of claim 1, it is characterized in that comprising:
Be arranged on the active component (14) at each overlapping position of signal wire (2) and sweep trace (1);
Optical screen film (8), it is arranged to cover at least the surface of the central signal wire (2) of signal wire (2), active component (14) and sweep trace (1), wherein
See that by vertical direction the optical screen film (8) and the pixel electrode (3,3 ') that cover the surface of signal wire (2) superpose mutually with respect to the surface of insulated substrate (10).
7,, it is characterized in that optical screen film (8) made by the resin with insulating property according to the display device substrate of claim 6.
8, according to the display device substrate of claim 1, it is characterized in that comprising:
Be arranged on the active component (14) at each overlapping position of signal wire (2) and sweep trace (1);
Contact hole (9) is used to allow active component (14) and pixel electrode (3,3 ') to contact with each other; With
Optical screen film (8), it is arranged to cover the surface of active component (14), signal wire (2) and sweep trace (1), wherein
See that by vertical direction the optical screen film (8) and the pixel electrode (3,3 ') that cover the surface of signal wire (2) superpose mutually with respect to the surface of insulated substrate (10).
9, display device substrate according to Claim 8 is characterized in that optical screen film (8) made by the resin with insulating property.
10, according to the display device substrate of claim 1, it is characterized in that comprising:
Be arranged on the active component (14) at each overlapping position of signal wire (2) and sweep trace (1);
Contact hole (9) is used to allow active component (14) and pixel electrode (3,3 ') to contact with each other; With
Optical screen film (8), it is arranged to cover at least the surface of the central signal wire (2) of signal wire (2), active component (14) and sweep trace (1), wherein:
Interlayer dielectric (15,20) be by two-layer or stack that multilayer constitutes and
Optical screen film (8) be stacked between the superiors (15) that constitute interlayer dielectric (15,20) and the orlop (20) and
See by vertical direction, place the gap (x, x ') between therebetween the pixel electrode (3,3 ') to be covered by optical screen film (8) at adjacent each other and signal wire (2) with respect to the surface of insulated substrate (10).
11,, it is characterized in that optical screen film (8) made by the resin with insulating property according to the display device substrate of claim 10.
12,, it is characterized in that optical screen film (8) is made of metal according to the display device substrate of claim 10.
13, according to the display device substrate of claim 1, it is characterized in that comprising:
Be arranged on the active component (14) at each overlapping position of signal wire (2) and sweep trace (1);
Contact hole (9) is used to allow active component (14) and pixel electrode (3,3 ') to contact with each other; With
Optical screen film (8), it is arranged to cover at least the surface of the central signal wire (2) of signal wire (2), active component (14) and sweep trace (1), wherein:
Interlayer dielectric (15,20) be by two-layer or stack that multilayer constitutes and
Optical screen film (8) be stacked between the superiors (15) that constitute interlayer dielectric (15,20) and the orlop (20) and
See that by vertical direction the optical screen film (8) and the pixel electrode (3,3 ') that cover the surface of signal wire (2) superpose mutually with respect to the surface of insulated substrate (10).
14,, it is characterized in that optical screen film (8) made by the resin with insulating property according to the display device substrate of claim 13.
15,, it is characterized in that optical screen film (8) is made of metal according to the display device substrate of claim 13.
16, according to the display device substrate of claim 1, it is characterized in that comprising:
Be arranged on the active component (14) at each overlapping position of signal wire (2) and sweep trace (1);
Contact hole (9) is used to allow active component (14) and pixel electrode (3,3 ') to contact with each other; With
Optical screen film (8), it is arranged to cover the surface of active component (14), signal wire (2) and sweep trace (1), wherein:
Interlayer dielectric (15,20) be by two-layer or stack that multilayer constitutes and
Optical screen film (8) be stacked between the superiors (15) that constitute interlayer dielectric (15,20) and the orlop (20) and
See that by vertical direction the optical screen film (8) and the pixel electrode (3,3 ') that cover the surface of signal wire (2) superpose mutually with respect to the surface of insulated substrate (10).
17,, it is characterized in that optical screen film (8) made by the resin with insulating property according to the display device substrate of claim 16.
18,, it is characterized in that optical screen film (8) is made of metal according to the display device substrate of claim 16.
19,, it is characterized in that gap (x, x ') is set to be not less than 1 μ m in the scope that is not more than 20 μ m according to the display device substrate of claim 1.
20, a kind of liquid crystal display device is characterized in that comprising the display device substrate described in the aforementioned claim 1.
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| JP2002381669 | 2002-12-27 | ||
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| CNB2003101234662A Division CN1252528C (en) | 2002-12-27 | 2003-12-26 | Display device substrate and liquid crystal display device with said substrate |
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| CNB2006101005135A Division CN100492145C (en) | 2002-12-27 | 2003-12-26 | Display device substrate and liquid crystal display device having the same |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100077530A Expired - Fee Related CN100495131C (en) | 2002-12-27 | 2003-12-26 | Substrate for a display device and a liquid crystal display device having the substrate therefor |
| CNB2006101005135A Expired - Fee Related CN100492145C (en) | 2002-12-27 | 2003-12-26 | Display device substrate and liquid crystal display device having the same |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006101005135A Expired - Fee Related CN100492145C (en) | 2002-12-27 | 2003-12-26 | Display device substrate and liquid crystal display device having the same |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2008304951A (en) |
| CN (2) | CN100495131C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104007593B (en) * | 2013-02-22 | 2016-11-23 | 群创光电股份有限公司 | Display panels |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05210110A (en) * | 1992-01-31 | 1993-08-20 | Canon Inc | Active matrix liquid crystal display device |
| JP3083712B2 (en) * | 1994-11-02 | 2000-09-04 | シャープ株式会社 | Liquid crystal display |
| JPH08297301A (en) * | 1995-02-28 | 1996-11-12 | Nec Corp | Liquid crystal display device |
| JP2003131240A (en) * | 2001-10-29 | 2003-05-08 | Hitachi Ltd | Liquid crystal display device |
-
2003
- 2003-12-26 CN CNB2006100077530A patent/CN100495131C/en not_active Expired - Fee Related
- 2003-12-26 CN CNB2006101005135A patent/CN100492145C/en not_active Expired - Fee Related
-
2008
- 2008-09-22 JP JP2008242760A patent/JP2008304951A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN100495131C (en) | 2009-06-03 |
| JP2008304951A (en) | 2008-12-18 |
| CN1873991A (en) | 2006-12-06 |
| CN100492145C (en) | 2009-05-27 |
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Legal Events
| Date | Code | Title | Description |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CI02 | Correction of invention patent application |
Correction item: Priority Correct: 2003.10.31 JP 2003-372584 False: Lack of priority second Number: 36 Page: The title page Volume: 22 |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: PRIORITY; FROM: MISSING THE SECOND ARTICLE OF PRIORITY TO: 2003.10.31 JP 2003-372584 |
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| C14 | Grant of patent or utility model | ||
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090603 Termination date: 20201226 |