CN1819243A - 具有内透镜的图像传感器 - Google Patents
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Abstract
图像传感器包括内透镜以使入射光能够到达聚光透镜，以便入射光可进一步到达光电二极管。光损失可减少，并且光灵敏度可得以改善。图像传感器包括至少一个微透镜，其把入射光聚焦在接收光信号的至少一个光传感器上，所述光信号是从至少一个微透镜传输的。图像传感器也包括至少一个内透镜，所述内透镜被设置在至少一个微透镜和至少一个光传感器之间，具有预定曲率的上表面以补偿对从至少一个微透镜所接收到的光的光灵敏度。
Description
本申请要求2004年12月30日提交的韩国专利申请No.10-2004-0116512的权益，通过引用全部结合于本申请中。
技术领域
本发明涉及图像传感器。更具体地，本发明涉及具有形成于滤色器部分中的内透镜的图像传感器以使入射光能够到达聚光透镜，以使入射光可进一步到达光电二极管。因而，光损失可减少，并且光灵敏度可得以改善。
背景技术
图像传感器是把光图像转变成电信号的半导体模块。图像传感器可为电荷耦合装置(CCD)或互补金属氧化物半导体(CMOS)图像传感器。这种图像传感器采用光电二极管探测光信号，并且分辨率由存在于图像平面中的光电二极管的数目确定。光电二极管接收图像。每一光电二极管代表一像素单元的关键元件，其包括滤色器阵列的对应滤色器和对应微透镜，所有这些可被集成于单个芯片上。随着增加分辨率连同更大的小型化的要求，每单位面积需要更多像素，这需要像素尺寸的减小。结果，光电二极管的面积相应减少，从而减少了光灵敏度。
为了补偿光灵敏度，可另外形成内透镜。内透镜使入射光能够适应由于F-数目所引起的会聚角度的变化。内透镜也补偿由于到光电二极管区的长行进距离而产生的杂散光。内透镜可由有机材料或无机材料形成。如果内透镜由有机材料形成，使用具有流动性的正性光阻剂(photoresist)。因此，形成无机材料内透镜的工艺与形成于滤色器部分上的聚光透镜的形成工艺相同。即，内透镜也可通过涂覆、曝光、显影、漂白、固化及平坦化滤色器部分而形成。
如果使用具有流动性的光阻剂，产生由于开槽(notching)所引起的控制临界尺度的问题。由于光阻剂受到待覆以光阻剂的光屏蔽金属层的影响，产生了开槽。为此，问题的产生在于形成内透镜的工艺复杂，并需要另外的夹层工艺。
发明内容
因此，本发明指向具有内透镜的图像传感器，其基本上消除了由相关技术的局限性和缺点所引起的一个或多个问题。
本发明的优点是提供具有内透镜的图像传感器，其中内透镜形成于滤色器部分以使入射光能够到达聚光透镜，以便入射光可进一步到达光电二极管。因而，光损失可减少，并且光灵敏度可得以改善。
本发明的另外的特征及优点将在随后的描述部分中提出，并且从描述中将是显而易见的，或从本发明的实践中习得。本发明的目的和其它优点可通过在书面描述和权利要求以及附图中所特别指出的结构和方法来实现并获得。
为了实现这些目的和其它优点并根据本发明的目的，如于此已具体化及广泛描述的，图像传感器包括：至少一个微透镜，所述微透镜把入射光聚焦在接收光信号的至少一个光传感器上，所述光信号是从至少一个微透镜传输的；以及至少一个内透镜，设置在所述至少一个微透镜和所述至少一个光传感器之间，具有预定曲率的上表面以补偿从至少一个微透镜所接收到的光的光灵敏度。
根据本发明的另一方面，用于制造图像传感器的方法包括：在平坦化层上形成光阻剂层；相对于光阻剂层执行对准曝光；相对于已曝光的光阻剂层来执行干蚀刻工艺；以及使用硅烷气体通过硅烷化(silation)在已蚀刻的光阻剂层上形成氧化物层。
可以理解本发明的前述一般性描述和以下详细描述二者是示范性和说明性的，且意图是提供如所要求的本发明的进一步解释。
附图说明
附图被包括以提供对本发明的深入理解、并被引入并组成本申请的部分，其说明本发明的实施例并连同说明书用于解释本发明的原理。在附图中：
图1是根据本发明的图像传感器的纵向结构的横截面图；
图2是黑白图像传感器的横截面图；
图3是图2中的图像传感器的横截面图，包括根据本发明的平坦化层；以及
图4-9是根据本发明的图像传感器的横截面图，并分别说明形成图像传感器的顺序的工艺步骤。
具体实施方式
将详细参考本发明的优选实施例，其实例在附图中说明。在任何可能的地方，相似参考标示将被用于所有附图以指示相同或相似部件。
参考图1，根据本发明的图像传感器包括：硅晶片或基片10；多个光传感器，如光电二极管12；平坦化层14，其可具有凹陷的表面；多个内透镜16，所述内透镜16包括氧化物层，形成于平坦化层14上以对应每一光电二极管12；滤色层18；形成于滤色层18上的涂覆层(overcoating layer)20；以及形成于涂覆层20上的微透镜22以对应每一内透镜16。
参考图2，通用的CCD-或CMOS-型工艺步骤被采用以在包括多个光电二极管12的硅晶片10上形成图像传感器的黑白结构。如图3中所示，平坦化层14由对应可见光波长呈现良好透射特性的有机材料组成。平坦化层14是钝化层，用来改进下面的结构的轮廓并为图像传感器上部提供较大的表面一致性。平坦化层14的上表面可具有多个凹陷，所述凹陷对应光电二极管12。
参考图4，平坦化层14被涂覆有流动性的光阻剂。所涂覆的光阻剂的厚度决定内透镜的形成。即，光阻剂层的厚度取决于理想的像素尺寸及在下面的层的厚度，即平坦化层14的厚度。在本发明的一实施例中，光阻剂被涂覆到大约0.5到1.5μm的厚度。
参考图5，用于内透镜形成的光阻剂使用掩模而经历对准曝光。对准曝光只在光阻剂层的预定部分中执行，以分解包含在光阻剂内的光激活的化合物，藉此关于可见光波长透射率得以改善。对于预定部分，剩余比也得以增加。对准曝光改善了在干蚀刻工艺期间光阻剂层对O2等离子体气体的耐受性，所述干蚀刻工艺增加了关于未曝光部分的选择性。
其后，如图6中所示，干蚀刻工艺在以下条件下执行：使用O2等离子气体、在N2气氛下、以120℃或更低的工艺温度、大约10到100W的RF功率、大约10到50sccm的O2流速。干蚀刻工艺去除内透镜层即如光阻剂层的涂覆厚度的大约50到90％。
参考图7，在N2气氛下施加热能，以在光阻剂层被蚀刻的表面获得预定曲率。即，通过在N2气氛下执行热处理工艺，光阻剂层被加热到大约150到200℃的温度。内透镜经历硅烷化，所述内透镜具有形成于其上表面上的预定曲率。
参考图8，硅烷化的内透镜16被形成。即，通过以大约90到150℃的温度原地执行的硅烷化工艺，氧化物层形成于光阻剂层及热处理过的内透镜上。氧化物可通过蒸发六甲基二硅烷(hexamethyldisilane)、四甲基二硅烷(tetramethyldisilane)、双(二甲基氨基)甲基硅烷(bis(dimethylamino)methylsilane)及其它硅烷气体而形成。氧化物层在以上硅烷气体蒸发过程中形成。即，因为光阻剂层与硅烷反应，悬空键的OH基在光阻剂层表面上形成。所述反应形成氧化物层。硅烷化在O2或O3气氛下原地执行以使内透镜的未曝光部分浅灰化。干回蚀刻工艺可忽略。内透镜因而被形成，改进了所完成的图像传感器的聚焦效率。
参考图9，滤色器18形成于硅烷化的(silated)内透镜16上以使能在光电二极管12的信号的色度或色分离。滤色器18是滤色器阵列的一部分，所述滤色器阵列包括根据波长或颜色来滤光的不同的滤色器。即，颜色可被过滤，如基色：红、蓝和绿，或补色：青、品红和黄。许多其它颜色组合是可能的，包括数目高于3的组合。
滤色器部分形成后，用作另一平坦化层的涂覆层被形成以保护滤色器部分、控制焦距及为微透镜提供表面，所述微透镜被设置以对应每一像素。因而，根据本发明的图像传感器得以完成。当内透镜形成时，滤色器部分形成于氧化物层上以补偿所接收的光。因而，工艺步骤得到简化。
在制造用于图像传感器的滤色器部分及透镜时，光灵敏度被增加，并且相位角被减小以便获得具有高分辨率和高光灵敏度的图像传感器。当内透镜形成时，复杂的工艺也被缩短。用于滤色器部分的平坦化层可被忽略，便于生产并能减少费用。
对本领域的技术人员来说显而易见的是，在本发明中可进行各种修改和变化而不背离本发明的精神或范围。因此，意图是，倘若这样的修改和变化在所附权利要求及其等价的范围内，本发明将涵盖这样的修改和变化。
Claims (18)
1.一种图像传感器，包括：
至少一个微透镜，其把入射光聚焦在接收光信号的至少一个光传感器上，所述光信号是从所述至少一个微透镜传输的；以及
至少一个内透镜，设置在所述至少一个微透镜和所述至少一个光传感器之间，具有预定曲率的上表面以增加对从所述至少一个微透镜所接收的光的光灵敏度。
2.如权利要求1的图像传感器，进一步包括：
形成于所述至少一个内透镜上的保护性氧化物层。
3.如权利要求1的图像传感器，进一步包括：
滤色器部分，设置在所述至少一个微透镜和所述至少一个内透镜之间，其使能所传输的光信号中的色分离。
4.如权利要求3的图像传感器，进一步包括：
形成于所述至少一个内透镜和所述滤色器部分之间的保护性氧化物层。
5.如权利要求3的图像传感器，其中所述至少一个内透镜被设置在所述滤色器部分和所述至少一个光传感器之间。
6.如权利要求3的图像传感器，其中所述滤色器部分是包括不同滤色器的滤色器阵列的部分，其根据波长过滤所传输的光。
7.一种用于制造图像传感器的方法，包括：
在平坦化层上形成光阻剂层；
相对于所述光阻剂层执行对准曝光；
相对于所述已曝光的光阻剂层执行干蚀刻工艺；
使用硅烷气体通过硅烷化在所述已蚀刻的光阻剂层上形成氧化物层。
8.如权利要求7的方法，进一步包括：
执行热处理工艺以给予所述已蚀刻的光阻剂层的上表面预定的曲率，从而形成内透镜。
9.如权利要求8的方法，其中所述内透镜通过以大约90到150℃的温度原地执行的硅烷化工艺来热处理。
10.如权利要求7的方法，其中所述光阻剂层以预定厚度形成以便确定内透镜形成。
11.如权利要求10的方法，其中所述光阻剂层的预定厚度大约为0.5到1.5μm。
12.如权利要求8的方法，进一步包括：
形成滤色器部分，其在所述内透镜上使能所透射的光信号中的色分离。
13.如权利要求12的方法，其中所述内透镜被设置在所述滤色器部分下方，所述滤色器部分使能在所传输的光信号中的色分离。
14.如权利要求12的方法，其中所述滤色器部分在形成所述氧化物层之后形成。
15.如权利要求7的方法，其中所述平坦化层是钝化层。
16.如权利要求7的方法，其中所述干蚀刻工艺使用O2等离子体气体来执行。
17.如权利要求7的方法，其中所述干蚀刻工艺除去所述光阻剂层厚度的大约50到90％。
18.如权利要求7的方法，其中所述干蚀刻工艺以120℃或更低的工艺温度、大约10到100W的RF功率、及大约10到50sccm的O2流速在N2气氛下执行。
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| KR1020040116512A KR100672706B1 (ko) | 2004-12-30 | 2004-12-30 | 보호되는 이너렌즈를 갖는 이미지 센서 |
| KR1020040116512 | 2004-12-30 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106601765A (zh) * | 2016-12-16 | 2017-04-26 | 深圳市华海技术有限公司 | 黑白cmos图像传感器及提高其感光度的制造方法 |
| CN111142176A (zh) * | 2019-12-25 | 2020-05-12 | 上海集成电路研发中心有限公司 | 一种内透镜及制作方法 |
| WO2021056989A1 (zh) * | 2019-09-23 | 2021-04-01 | 神盾股份有限公司 | 集成光学传感器及其制造方法 |
| WO2022226826A1 (zh) * | 2021-04-28 | 2022-11-03 | 京东方科技集团股份有限公司 | 平板探测器及显示装置 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100769131B1 (ko) * | 2005-12-30 | 2007-10-23 | 동부일렉트로닉스 주식회사 | Ｃｍｏｓ 이미지 센서의 제조 방법 |
| KR100795922B1 (ko) * | 2006-07-28 | 2008-01-21 | 삼성전자주식회사 | 이미지 픽업 소자 및 이미지 픽업 소자의 제조방법 |
| KR100784871B1 (ko) * | 2006-07-31 | 2007-12-14 | 삼성전자주식회사 | 내부 렌즈를 구비한 이미지 센서의 제조방법 |
| KR100967482B1 (ko) | 2007-12-17 | 2010-07-07 | 주식회사 동부하이텍 | 이미지 센서의 제조 방법 |
| KR20100030865A (ko) * | 2008-09-11 | 2010-03-19 | 삼성전자주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
| KR102056141B1 (ko) | 2013-02-25 | 2019-12-16 | 삼성전자주식회사 | 이미지 센서 및 이를 포함하는 컴퓨팅 시스템 |
| US10050159B2 (en) * | 2016-12-12 | 2018-08-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Lens structure |
| KR20210078632A (ko) | 2019-12-18 | 2021-06-29 | 삼성전자주식회사 | 이미지 센서 |
| KR20220041563A (ko) | 2020-09-25 | 2022-04-01 | 에스케이하이닉스 주식회사 | 이미지 센서 및 그 제조 방법 |
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| JP3666203B2 (ja) * | 1997-09-08 | 2005-06-29 | ソニー株式会社 | 固体撮像素子 |
| US6372558B1 (en) * | 1998-08-18 | 2002-04-16 | Sony Corporation | Electrooptic device, driving substrate for electrooptic device, and method of manufacturing the device and substrate |
| US6858898B1 (en) * | 1999-03-23 | 2005-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US6307243B1 (en) * | 1999-07-19 | 2001-10-23 | Micron Technology, Inc. | Microlens array with improved fill factor |
| US6821810B1 (en) * | 2000-08-07 | 2004-11-23 | Taiwan Semiconductor Manufacturing Company | High transmittance overcoat for optimization of long focal length microlens arrays in semiconductor color imagers |
| KR20020042098A (ko) | 2000-11-30 | 2002-06-05 | 박종섭 | 이미지센서 및 그 제조 방법 |
| US6489227B1 (en) * | 2001-07-30 | 2002-12-03 | Taiwan Semiconductor Manufacturing Company | Method of etching a polysilicon layer during the stripping of the photoresist shape used as an etch mask to create an opening to an underlying fuse structure |
| JP2003229553A (ja) * | 2002-02-05 | 2003-08-15 | Sharp Corp | 半導体装置及びその製造方法 |
| JP2003332547A (ja) * | 2002-05-16 | 2003-11-21 | Fuji Film Microdevices Co Ltd | 固体撮像素子及びその製造方法 |
| KR100873289B1 (ko) | 2002-07-19 | 2008-12-11 | 매그나칩 반도체 유한회사 | 경사입사광의 영향을 감소시킨 시모스 이미지센서 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106601765A (zh) * | 2016-12-16 | 2017-04-26 | 深圳市华海技术有限公司 | 黑白cmos图像传感器及提高其感光度的制造方法 |
| CN106601765B (zh) * | 2016-12-16 | 2018-05-08 | 深圳市华海技术有限公司 | 黑白cmos图像传感器及提高其感光度的制造方法 |
| WO2021056989A1 (zh) * | 2019-09-23 | 2021-04-01 | 神盾股份有限公司 | 集成光学传感器及其制造方法 |
| CN111142176A (zh) * | 2019-12-25 | 2020-05-12 | 上海集成电路研发中心有限公司 | 一种内透镜及制作方法 |
| WO2022226826A1 (zh) * | 2021-04-28 | 2022-11-03 | 京东方科技集团股份有限公司 | 平板探测器及显示装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20060077608A (ko) | 2006-07-05 |
| US20060146415A1 (en) | 2006-07-06 |
| US7358110B2 (en) | 2008-04-15 |
| US20080247060A1 (en) | 2008-10-09 |
| KR100672706B1 (ko) | 2007-01-22 |
| CN100470818C (zh) | 2009-03-18 |
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