CN1819122A - Etching method, program, computer readable storage medium and plasma processing apparatus - Google Patents
Etching method, program, computer readable storage medium and plasma processing apparatus Download PDFInfo
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- CN1819122A CN1819122A CNA2006100012803A CN200610001280A CN1819122A CN 1819122 A CN1819122 A CN 1819122A CN A2006100012803 A CNA2006100012803 A CN A2006100012803A CN 200610001280 A CN200610001280 A CN 200610001280A CN 1819122 A CN1819122 A CN 1819122A
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Abstract
The invention relates to an etching method, which can suppress breakage or deterioration of bottom film when etching a stacked insulating film with silicon insulating film coating. The etching method comprises following steps: disposing a substrate (W) with an SOG film and a TEOS film stacked on a titanium nitride film on a pedestal (13) in a processing chamber (S); maintaining reduced pressure in the processing chamber (S), and guiding an etching gas free of O2 but containing C2F8 and N2 into the processing chamber (S) from an upper electrode (30); and applying a high-frequency wave on the pedestal (13) by a high-frequency power supply to form the gas plasma in the processing chamber (S), and etching the stacked film on the substrate (W).
Description
Technical field
The present invention relates to the recording medium and the plasma processing apparatus of the engraving method that etching is stacked in the silicon class dielectric film on the substrate, the program that is used to carry out this engraving method, embodied on computer readable.
Background technology
For example in the manufacturing process of electronic installation, for example on the counterdie of substrate, form multilayer silicon class dielectric film with multi-layer wiring structure etc.Then, this silicon class dielectric film of lamination and the etched grooving of stack membrane that forms or hole isotactic setting shape.At present, etching gas etching layer by layer from the upper strata of the reacting gas that contains CF (fluorine carbon) class is for example used in the etching of this stack membrane, but from the viewpoint of productivity ratio, proposes to have the method for etching stack membrane (for example with reference to patent documentation 1) together.Moreover, in order to remove remaining carbon in the etching gas, use O
2Gas adds the method in the reacting gas of CF class to.
, in electronic installation, as shown in figure 10, in multi-layer wiring structure, for example be formed with the upper and lower disclination from a plurality of A1 distributions 100.Form stack membrane 102 on the upper strata of A1 distribution 100 across counterdie 101, and layer is formed with etchant resist R as etching mask thereon with insulating properties.At this moment, for eliminate by mistake from the influence that produces of A1 distribution 100, make the flattening surface of stack membrane 102, the one deck in the stack membrane 102 use the coating dielectric film 103 that obtains by rubbing method of SOG (Spin OnGlass) film etc.This coating dielectric film 103 by the coating liquid shape coating fluid and make it dry and form, according to the different thickness in position difference to some extent, thereby make upper surface become smooth.
When utilizing the CF class etching gas that adds oxygen as described above, when etching has the stack membrane 102 of coating dielectric film 103 of this class thickness change, coating dielectric film 103 is compared with other dielectric film 104, etching speed is slow, thus all the etching period of stack membranes 102 to be coated with the influence of thickness of dielectric film 103 big.Therefore, in coating dielectric film 103 thick place and thin place, the etching period of stack membrane 102 differs widely.Just, begin the time that film 101 on earth exposes from the etching on stack membrane 102 surfaces, each A1 distribution 100 all differs widely.Consequently: the etching to whole stack membranes 102 finishes during this period of time, and a part of counterdie 101 is exposed in the etching gas for a long time.Therefore, the counterdie 101 of non-etch target is cut down, and counterdie 101 has the tendency of breakage or deterioration.
Patent documentation 1: TOHKEMY 2000-235973 communique
Summary of the invention
The present invention finishes in view of such viewpoint, and its purpose is: when etching contains the stack membrane of silicon class coating dielectric film, suppress the breakage or the deterioration of counterdie.
In order to reach above-mentioned purpose, the present invention relates to the method that etching is formed on the stack membrane with multilayer silicon class dielectric film on the substrate, it is characterized in that, above-mentioned stack membrane comprises the silicon-coating class dielectric film that utilizes rubbing method to form, the etching gas that will contain fluorocarbons class gas and nitrogen and not contain oxygen imports in the process chamber stack membrane in this process chamber on the etching substrates.In addition, so-called silicon class dielectric film is the dielectric film that contains silicon.Moreover silicon insulating film comprises the SiO that contains silicon and oxygen
2, silica types such as SiOF, SiOC dielectric film.
As the present invention, by using the part of nitrogen, can reduce etching speed poor of silicon-coating class dielectric film and in addition silicon class dielectric film as etching gas.Consequently: because the etching speed of other silicon class dielectric film of silicon-coating class dielectric film is improved relatively, even so for example on silicon-coating class dielectric film, have film thickness difference by the position difference, also can reduce the stack membrane etching and finish, arrive the time difference in the moment of counterdie.Therefore, a part of counterdie is not exposed in the etching gas for a long time, can suppress the breakage or the deterioration of counterdie.Moreover, because the etching speed of silicon-coating class dielectric film and silicon class dielectric film in addition is the speed of equal extent,, improve the etching shape so can vertically carry out etching.In addition, rubbing method is that the coating fluid with liquid is coated on the substrate and makes it dry, forms the method for film.
Above-mentioned silicon-coating class dielectric film also can be a sog film.Moreover, adjust the import volume of nitrogen, also can adjust the ratio of above-mentioned silicon-coating class dielectric film and the etching speed of in addition silicon class dielectric film.Thus, the ratio of optimization coated film and the etching speed of in addition dielectric film, but the etching stack membrane is the shape of regulation.
Except that above-mentioned silicon-coating class dielectric film, above-mentioned stack membrane also can contain the CVD silicon class dielectric film that utilizes the chemical vapor deposition method to form.Above-mentioned CVD silicon class dielectric film is silicon oxide layer also.
The import volume of above-mentioned nitrogen can be adjusted to 30～40% flow of the whole flows of etching gas.
The counterdie of above-mentioned stack membrane also can be the metal film of nitrogen class.At this moment, according to etching gas, the etching selectivity of stack membrane and counterdie rises.Therefore, further suppress the etching of counterdie, and suppress the breakage of counterdie.In addition, the metal film of above-mentioned nitrogen class also can be a titanium nitride.
Other viewpoints of the present invention are provided for realizing on computers the program of 1～8 each described engraving method.Moreover another viewpoint of the present invention provides the recording medium of the embodied on computer readable that records the program that is used for realizing on computers 1～8 each described engraving method.And another viewpoint of the present invention also provides the plasma processing apparatus with control part of carrying out 1～8 each described engraving method.
Because the breakage of the counterdie when the present invention can suppress etching or deterioration, so can improve the quality of device.
Description of drawings
Fig. 1 is the longitudinal section of the concise and to the point formation of explanation Etaching device.
Fig. 2 is the block diagram of the formation of indication device control part.
Fig. 3 is the longitudinal section of the membrane structure on the substrate.
Fig. 4 is the longitudinal section of the membrane structure after the etching.
Fig. 5 is expression N
2The flow-rate ratio of gas, with the curve chart of the relation of the etching speed of sog film and TEOS film.
Fig. 6 is the longitudinal section that counterdie has concavo-convex membrane structure.
Fig. 7 is expression N
2The flow-rate ratio of gas, with the curve chart of the relation of the reduction of etchant resist and stack membrane.
Fig. 8 is that O is supplied with in expression
2During gas and supply with N
2The figure of the actual etching state during gas.
Fig. 9 represents supplying with O
2During gas and supply with N
2The table of the etching selectivity of the titanium nitride film during gas.
Figure 10 is the different membrane structure longitudinal section that is used to illustrate the etching period that arrives counterdie.
Symbol description
1: Etaching device 10: container handling
13: pedestal 30: upper electrode
41～44: gas supply source S: process chamber
W: substrate
Embodiment
Below, the preferred embodiment of the present invention is described.Fig. 1 is the longitudinal section key diagram of concise and to the point formation of the Etaching device 1 of the expression engraving method of implementing present embodiment.
Etaching device 1 for example has the slightly container handling 10 of drum.Be formed with process chamber S in container handling 10 inside.Container handling 10 is for example formed by aluminium alloy, and internal face is coated with pellumina or yttrium oxide-film.
The bottom of central authorities is provided with columned base supports platform 12 across insulation board 11 in container handling 10.Base supports platform 12 upper supports have the pedestal 13 of mounting substrate W.Pedestal 13 constitutes lower electrode.Pedestal 13 is for example formed by aluminium alloy.
The top of pedestal 13 is provided with the electrostatic chuck 14 that keeps substrate W.Electrostatic chuck 14 inside have the electrode layer 16 that is connected on the current and power supply 15, from DC power supply 15 direct voltage are applied on the electrode layer 16, produce the Coulomb force, substrate W can be adsorbed on pedestal 13 above.
Form the cryogen chamber 17 of ring-type in the inside of base supports platform 12.Cryogen chamber 17 is communicated with the cooling device that is arranged on container handling 10 outsides (not having diagram) by pipe arrangement 17a, 17b.By pipe arrangement 17a, 17b cooling agent or cooling water circulation are supplied to coolant room 17, supply with the temperature of the substrate W on the may command pedestal 13 by this circulation.
By the gas supply lines 18 in pedestal 13 and the base supports platform 12 lead to electrostatic chuck 14 above, heat-conducting gases such as He gas can be supplied between substrate W and the electrostatic chuck 14.
By adaptation 19, high frequency electric source 20 is connected electrically on the pedestal 13.The high frequency voltage of high frequency electric source 20 exportable for example 2MHz～20MHz left and right sides frequencies.
The top of pedestal 13 is provided with the upper electrode 30 with pedestal 13 parallel subtends.Between pedestal 13 and upper electrode 30, be formed with the plasma span.
Be connected with the supply pipe 40 of the gas squit hole 30a that leads to upper electrode 30 above the container handling 10.Gas supply pipe 40 is branch halfway, is connected on a plurality of for example four each gas supply sources 41,42,43,44.In the present embodiment, for example be sealed with C in the first gas supply source 41
4F
8Gas is sealed with N in the second gas supply source 42
2Gas is sealed with Ar gas in the 3rd gas supply source 43, is sealed with CO gas in the 4th gas supply source 44.On the arm of each the gas supply source that leads to gas supply pipe 40, be respectively arranged with mass flow controller 45.Thus, can mix from the gas of gas supply source 41～44 and supply to process chamber S with the flow-rate ratio of regulation.In addition, the flow control in each mass flow controller 45 is undertaken by apparatus control portion 46 described later.
Etaching device 1 is provided with apparatus control portion 46, and control is used to carry out the action of the various elements of etch processes such as DC power supply 15, high frequency electric source 20 and mass flow controller 45.Apparatus control portion 46 for example is made of computer, as shown in Figure 2, comprising: record is used to realize the recording portion 46a of program P of etch processes and the 46b of calculation portion that is made of the CPU of executive program P etc.For example as shown in Figure 1, be connected with keyboard of the input operation of instructing in order to manage Etaching device 1 etc. and the customer interface portion 47 that display constitutes on the apparatus control portion 46 by engineering management person.For example, by recording medium, also can be recorded in the recording portion 46a from this customer interface portion 47 installation procedure P.Apparatus control portion 46 is according to program P, and the action of the Etaching device 1 of control of quality flow controller 45 grades can realize the etch processes of stipulating.
Side in container handling 10 bottoms is connected with the blast pipe 50 that leads to exhaust apparatus such as no illustrated vacuum pump.By the exhaust of this blast pipe 50, can set the pressure for stipulating in the process chamber S.
Around container handling 10, be provided with horizontal magnetic field and form magnet 60.Form magnet 60 by horizontal magnetic field and in process chamber S, form magnetic field, make the plasma densification that produces in the process chamber S, can improve etching efficiency.
The etch processes of the substrate W that Etaching device 1 more than using carries out then, is described.For example as shown in Figure 3, on substrate W, from down successively lamination as the titanium nitride film 80 of counterdie, as TEOS (tetraethoxysilane) film 81 of CVD silicon class dielectric film, as the sog film 82 of silicon-coating class dielectric film, be the etchant resist R of predetermined pattern as the TEOS film 83 and the exposure of CVD dielectric film.TEOS film the 81, the 83rd is with the SiO of TEOS as the formation of prepared using CVD method
2Film (silicon oxide layer).In addition, form stack membrane 84 by TEOS film 81, sog film 82 and TEOS film 83.In this etch processes, remove stack membrane 84 from above and become concavity, on stack membrane 84, form ditch (raceway groove).
At first, substrate W absorption is remained on the pedestal 13.The substrate W that adjusts on the pedestal 13 is a set point of temperature.Then, by the exhaust of blast pipe 50, adjust the pressure for stipulating in the process chamber S.From upper electrode 30, will be for example by C
4F
8Gas, N
2The etching gas that gas, Ar gas and CO gas constitute supplies in the process chamber S.N for example
2Gas is supplied with according to 30%～40% flow-rate ratio of the whole flows of etching gas.By high frequency electric source 20, high frequency waves are applied on the pedestal 13, the gas in the process chamber S is by plasmaization.Moreover, in process chamber S, forming magnet 60 by horizontal magnetic field and form magnetic field, plasma is by densification.By the effect of this plasma, as shown in Figure 4, the stack membrane 84 on the substrate W is etched into to the below from top
Shape forms ditch.
Then, as above-mentioned etch processes, when utilization contains C
4F
8Gas and N
2When the etching gas of gas, etching have the stack membrane 84 of sog film 82 and TEOS film 81,83, the etching speed of sog film 82 and TEOS film 81,83 is tested.
Fig. 5 is the N of expression with respect to the total flow of etching gas
2The experimental data of the relation of the etching speed of the flow-rate ratio of gas and sog film 82, TEOS film 81,83.This experiment is at processing pressure: 3.99Pa (30mT), high frequency power: 1300W, C
4F
8The flow of/CO/Ar: 12/50/200cm
3/ min, substrate temperature: carry out under 20 ℃ the condition.Can confirm according to Fig. 5: the etching speed of sog film 82 and TEOS film 81,83 is along with N
2The flow-rate ratio of gas and changing is worked as N
2The flow-rate ratio of gas is 30%～40% o'clock, and the etching speed of sog film 82 and TEOS film 81,83 is approaching.For example, work as N
2The flow-rate ratio of gas is 30%～40% o'clock, and the etching speed of sog film 82 and TEOS film 81,83 is more than 0.6～0.8 than (sog film/TEOS film).Like this, by adjusting N
2The flow-rate ratio of gas can make the etching speed of sog film 82 and TEOS film 81,83 close, can improve this etching shape as a result.For example, as shown in Figure 6, form highly different a plurality of A1 distributions 90, upper strata at each A1 distribution 90, by titanium nitride film 80, from forming TEOS film 81, different sog film 82 and the TEOS films 83 of thickness successively down, even under these circumstances as counterdie, etching in the sog film 82 is also carrying out with the speed of degree with TEOS film 81, reduces so arrive the difference of etching period T of the titanium nitride film 80 of each A1 distribution 90 from the table of stack membrane 84.Consequently: a part of titanium nitride film 80 does not expose to the open air for a long time in etching gas, suppresses the breakage or the deterioration of titanium nitride film 80.In addition, the multi-layer film structure among Fig. 6 is the structure that is used to illustrate, and is different with the reduced scale of reality.
Moreover, as shown in Figure 7, by improving N
2The flow-rate ratio of gas can be confirmed to be improved with respect to the etching selectivity of the stack membrane 84 of etchant resist R, and the film of etchant resist R reduces and also suppressed.
Then, as above-mentioned etch processes, check is with N
2The stack membrane 84 when gas adds in the etching gas and the etching selectivity of titanium nitride film 80.Fig. 8 is that expression is with O
2Etching state when gas adds in the etching gas and with N
2The figure of the etching state when gas adds in the etching gas.Fig. 9 be expression from the etching result of Fig. 8 try to achieve with respect to adding O
2During gas and add N
2The table of the etching selectivity of the titanium nitride film during gas (etching speed of the etching speed/titanium nitride of stack membrane).This experiment is at processing pressure: 3.99Pa (30mT), high frequency power: 1300W, C
4F
8/ CO/Ar/O
2Flow: 10/100/200/9cm
3/ min, C
4F
8/ CO/Ar/N
2Flow: 12/50/200/60cm
3/ min, substrate temperature: carry out under 20 ℃ the condition.As shown in Figure 9, can confirm: with interpolation O
2The gas phase ratio adds N
2One side of gas significantly improves the etching selectivity of the titanium nitride film of stack membrane.Therefore, do not add O in the etching gas
2Gas and add N
2Gas, the reduction of the titanium nitride film 80 in the time of can suppressing etching.Moreover, according to Fig. 8, with interpolation O
2Compare during gas, add N
2Bending (bowing) phenomenon that the width of the side its underpart during gas broadens is few, and the etching shape also can be improved.
More than, an example of embodiments of the present invention is described, but the present invention is not limited to this example and can adopts various forms.For example, in the above-described embodiment, stack membrane 84 is from the following trilamellar membrane of lamination TEOS film 81, sog film 82 and TEOS film 83 successively, but the present invention is also applicable to the etching of the stack membrane of other number of plies that comprises one deck sog film at least.In addition, the sog film 82 of stack membrane 84 can be for example SiLK (the login trade mark of ダ ウ ケ ミ カ Le society) of other silicon-coating class dielectric film, the Low-k film of HSQ film etc. (low dielectric constant film).Moreover the TEOS film 81,83 of stack membrane 84 also can be other cvd film, for example the Low-k film of HTO, BPSG, BSG, PSG or SiOC, SiOF etc.And the silicon class dielectric film except that sog film 82 also can be the film that forms by other film forming rule except that cvd film such as splash method, thermal oxidation method etc.The titanium nitride film 80 of counterdie also can be other nitrogen metal film, for example TaN film.Moreover the fluorocarbons class gas of supplying with as reacting gas also is not limited to C
4F
8, according to etching material also CF
4, CHF
3, C
2F
6, CH
2F
2Wait other fluorocarbons class gas.Moreover the present invention is also applicable to the etching of the substrates such as reticle mask that semiconductor wafer, FPD (flat-panel monitor), photomask are used.
Utilizability on the industry
The present invention is useful when etching contains the multilayer insulating film of silicon-coating class dielectric film.
Claims (11)
1. engraving method, etching is formed on stack membrane on the substrate, that have multilayer silicon class dielectric film, it is characterized in that:
Described stack membrane comprises the silicon-coating class dielectric film that utilizes rubbing method to form,
The etching gas that will contain fluorocarbons class gas and nitrogen and not contain oxygen imports in the process chamber, in this process chamber the stack membrane on the substrate is carried out etching.
2. engraving method as claimed in claim 1 is characterized in that:
Described silicon-coating class dielectric film is a sog film.
3. engraving method as claimed in claim 1 or 2 is characterized in that:
Adjust the import volume of nitrogen, and adjust the ratio of described silicon-coating class dielectric film and the etching speed of in addition silicon class dielectric film.
4. as each described engraving method of claim 1～3, it is characterized in that:
In described stack membrane, except that described silicon-coating class dielectric film, also comprise the CVD silicon class dielectric film that utilizes the chemical vapor deposition method to form.
5. engraving method as claimed in claim 4 is characterized in that:
Described CVD silicon class dielectric film is a silicon oxide layer.
6. engraving method as claimed in claim 5 is characterized in that:
The import volume of described nitrogen is adjusted into 30～40% flow of the whole flows of etching gas.
7. as each described engraving method of claim 1～6, it is characterized in that:
The counterdie of described stack membrane is the metal film of nitrogen class.
8. engraving method as claimed in claim 7 is characterized in that:
The metal film of described nitrogen class is a titanium nitride.
9. program that is used for realizing on computers each described engraving method of claim 1～8.
10. the recording medium of an embodied on computer readable is characterized in that:
Record the program that is used for realizing on computers each described engraving method of claim 1～8.
11. a plasma processing apparatus is characterized in that:
Control part with enforcement of rights requirement 1～8 each described engraving method.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005006332A JP2006196663A (en) | 2005-01-13 | 2005-01-13 | Etching method, program, recording, computer-readable recording medium, and plasma processor |
| JP2005006332 | 2005-01-13 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1819122A true CN1819122A (en) | 2006-08-16 |
| CN100508135C CN100508135C (en) | 2009-07-01 |
Family
ID=36802502
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100012803A Expired - Fee Related CN100508135C (en) | 2005-01-13 | 2006-01-12 | Etching method, program, computer readable storage medium and plasma processing apparatus |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2006196663A (en) |
| KR (1) | KR100761563B1 (en) |
| CN (1) | CN100508135C (en) |
| TW (1) | TWI390626B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102459704A (en) * | 2009-06-03 | 2012-05-16 | 应用材料公司 | Method and apparatus for etching |
| CN104704612A (en) * | 2012-11-01 | 2015-06-10 | 东京毅力科创株式会社 | Plasma treatment method and plasma treatment device |
| CN104704612B (en) * | 2012-11-01 | 2016-11-30 | 东京毅力科创株式会社 | Method of plasma processing and plasma processing apparatus |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015070232A (en) * | 2013-09-30 | 2015-04-13 | 株式会社東芝 | Semiconductor device manufacturing method and semiconductor manufacturing device |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4216922B2 (en) * | 1998-05-08 | 2009-01-28 | 東京エレクトロン株式会社 | Oxide film etching method |
| US5269879A (en) * | 1991-10-16 | 1993-12-14 | Lam Research Corporation | Method of etching vias without sputtering of underlying electrically conductive layer |
| JP4173454B2 (en) * | 1999-06-24 | 2008-10-29 | 株式会社ルネサステクノロジ | Manufacturing method of semiconductor integrated circuit device |
| JP2001077086A (en) * | 1999-08-31 | 2001-03-23 | Oki Electric Ind Co Ltd | Dry etching method of semiconductor device |
| JP4381526B2 (en) * | 1999-10-26 | 2009-12-09 | 東京エレクトロン株式会社 | Plasma etching method |
| EP1281193A2 (en) * | 2000-05-12 | 2003-02-05 | Tokyo Electron Limited | Method of high selectivity sac etching |
| JP2001351974A (en) * | 2000-06-08 | 2001-12-21 | Seiko Epson Corp | Manufacturing method of semiconductor device |
| JP4186045B2 (en) * | 2000-11-08 | 2008-11-26 | ダイキン工業株式会社 | Dry etching gas and dry etching method |
| JP2004200299A (en) * | 2002-12-17 | 2004-07-15 | Toshiba Corp | Method of manufacturing electronic device |
| JP2005005697A (en) * | 2003-05-21 | 2005-01-06 | Semiconductor Leading Edge Technologies Inc | Manufacturing method of semiconductor device |
-
2005
- 2005-01-13 JP JP2005006332A patent/JP2006196663A/en active Pending
-
2006
- 2006-01-11 KR KR1020060002951A patent/KR100761563B1/en not_active IP Right Cessation
- 2006-01-11 TW TW095101054A patent/TWI390626B/en not_active IP Right Cessation
- 2006-01-12 CN CNB2006100012803A patent/CN100508135C/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102459704A (en) * | 2009-06-03 | 2012-05-16 | 应用材料公司 | Method and apparatus for etching |
| CN102459704B (en) * | 2009-06-03 | 2014-08-20 | 应用材料公司 | Method and apparatus for etching |
| CN104704612A (en) * | 2012-11-01 | 2015-06-10 | 东京毅力科创株式会社 | Plasma treatment method and plasma treatment device |
| CN104704612B (en) * | 2012-11-01 | 2016-11-30 | 东京毅力科创株式会社 | Method of plasma processing and plasma processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2006196663A (en) | 2006-07-27 |
| KR20060082799A (en) | 2006-07-19 |
| KR100761563B1 (en) | 2007-09-27 |
| CN100508135C (en) | 2009-07-01 |
| TWI390626B (en) | 2013-03-21 |
| TW200633052A (en) | 2006-09-16 |
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