CN1815883A - Chip-type wave-filtering assembly - Google Patents
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- CN1815883A CN1815883A CN 200510007027 CN200510007027A CN1815883A CN 1815883 A CN1815883 A CN 1815883A CN 200510007027 CN200510007027 CN 200510007027 CN 200510007027 A CN200510007027 A CN 200510007027A CN 1815883 A CN1815883 A CN 1815883A
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- 238000001914 filtration Methods 0.000 title claims description 72
- 239000010410 layer Substances 0.000 claims abstract description 64
- 239000007787 solid Substances 0.000 claims abstract description 34
- 239000011229 interlayer Substances 0.000 claims abstract description 33
- 230000000694 effects Effects 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 45
- 229910010293 ceramic material Inorganic materials 0.000 claims description 5
- 239000003989 dielectric material Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 2
- 238000004891 communication Methods 0.000 abstract description 14
- 238000013461 design Methods 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 3
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- 238000010276 construction Methods 0.000 description 3
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- 241000237858 Gastropoda Species 0.000 description 2
- 230000008676 import Effects 0.000 description 2
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- 238000010295 mobile communication Methods 0.000 description 2
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- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
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Abstract
One end of filter is connected to system circuitry, and the other end is connected to ground. The filter module contains main body including left and right end faces. The main body includes parts: first base plate; first conductive layer coated on the first base plate according to first solid pattern; middle interlayer coated on the first conductive layer, and connected to the first base plate; second conductive layer coated on the second base plate according to second solid pattern; second base plate setup on the second conductive layer; two end poles set up on left and right end faces of the main body. The first and second conductive layers are insulated to each other, and connected to two end poles electrically respectively. It is partial overlapped between first solid pattern and second solid pattern. Thus, the filter presents maximal losser effect for specific frequency range of wireless communication for system circuitry.
Description
Technical field
The present invention relates to a kind of chip-type wave-filtering assembly, especially a kind of chip-type wave-filtering assembly that is the maximum attenuation characteristic in special frequency channel.
Background technology
Along with the appearance of action worker trend, apparent size the compact and development gesture that wireless communication function is incorporated into message digit circuit product become inevitable! The communication dealer is invariably in direction effort such as chipset unification, minimizing power consumption and chip volume dwindle, to cooperate the integration of multimedia expressive ability and mechanics of communication.Yet when the function of message digit system was improved gradually, the frequency range of subsidiary digital signal raise relatively; In addition, the Integration Design of the miniaturization of products, the harmonic wave of this higher frequency range digital signal and the wireless communication signal of constantly weeding out the old and bring forth the new (GSM, CDMA, PCS, 3G, WLAN or the like) will be interfering with each other and produce the phenomenon of distorted signals in internal system; Therefore, the message digit circuit in the system line design must add the signal attenuation line design at characteristic frequency, and when avoiding the transmitting/receiving wireless communication signal, the signal that this message digit circuit is existed interferes with each other.
With typical wireless telecommunications system mobile phone is example, when the display screen function rises to the high-resolution display screen, the signal frequency range that main system and display screen drive between the body circuit significantly raises, and because the restriction of product structure miniaturized design, antenna, ultimate range between radio frequency (RF) circuit and the above-mentioned holding wire has very harsh restriction in design, cause eventually and cause radio-frequency line and display screen to drive interfering with each other between the body circuit, produce the collection of letters or show bad, therefore must on the picture shows signal, design decay circuit, to solve this problem interfering with each other at RF special frequency channel or frequency.
The designing technique of general modal tool specific frequency attenuation characteristic filter circuit, shown in Fig. 1 and Figure 1A, indivedual inductance 10a and the electric capacity 11a formation LC filter circuits (low-pass filtering) of using of its expression can be at the in addition filtering of the signal of RF circuit characteristic frequency or frequency range or harmonic wave; Yet line design shown in Figure 1 need be used electric capacity and inductance simultaneously, because of it is the element with capacitance or inductance/resistance value, reaches the function of filtering characteristic frequency or frequency range with the matching Design of electric capacity or inductance two specific characters; Because the quantity of general information digital circuit holding wire is quite a lot of, take up space with promptly the arrange in pairs or groups design utmost point consumption of an inductance and an electric capacity of a message digit holding wire, obviously can't meet short and small frivolous application trend, even utilize chip-shaped array type (Array Type) assembly of microminiaturized size, still can produce the problem of application space for system that must miniaturized design.
Another common rule of doing is shown in Fig. 2 to Fig. 2 B, use has special construction, (assembly itself has the L-C-L structure as the chip-shaped integrated assembly of T type filter function, low pass filter in conjunction with two inductance element 10b, 10 ' b and a capacity cell 11b, with reference to figure 2A), reach the signal of RF circuit characteristic frequency or frequency range or the harmonic wave function of filtering in addition; Modular construction schematic diagram shown in Fig. 2 B, the chip-shaped integrated assembly of this T type filter function comprises the first base material 2b, arranges a plurality of first inductance element 10b and second inductance element, the 10 ' b, the dielectric layer 3b that covers this first inductance element 10b and the first assembly 10 ' b of this second inductance that are provided with, is laid in the cross conductive layer 4b on this dielectric layer 3b and covers second base material (not shown) on this cross conductive layer 4b in the last side of this first base material 2b, to form an integrated assembly with filter function of special construction.Wherein, this first inductance element 10b and this second inductance element 10 ' b are made into the snail shape; This first inductance element 10b is arranged at the side on this first base material 2b; These a plurality of second inductance element, 10 ' b are arranged at the opposite side on this first base material 2b and are electrically connected on described a plurality of first inductance element 10b one to one by a plurality of winding displacements, form each first inductance element 10b and second inductance element, 10 ' b is series connection; The setting of this cross conductive layer 4b, between this first inductance element 10b that is series connection and second inductance element, 10 ' b, also form a capacity cell 11b, and be conducting state to the outside extension of assembly and the external world or circuit board (not icon) by this cross conductive layer 4b, allow the signal ground of this characteristic frequency, reach the function that this set specific frequency signal is filtered.The chip-shaped integrated assembly of this T type filter function shown in Fig. 2 B, by the chip-shaped array of function integrated structure and the microminiaturization of size of components, can effectively solve the application space problem that the miniaturized design system must face, but for the chip-shaped assembly of microminiaturization itself, when making, easily be subject to and make precision and be difficult to improve (the meticulous helix of needs when being provided with) as the inductance of snail shape, insufficient space is (as spiral number decision inductance value, but the spiral number has restricted number because of the coating insufficient space, further limit scope of design) etc. problem, so that can't cooperate complexity in the increase design and preparation technology's difficulty with requirement specification.
Summary of the invention
Main purpose of the present invention is to provide a kind of chip-type wave-filtering assembly, can reach the filtering requirements that has the maximum attenuation characteristic at special frequency channel design, and can meet application with the chip-shaped assembly of simplified structure.
Of the present invention time a purpose is to provide a kind of chip-type wave-filtering assembly, uses existing manufacture craft and equipment and can make, and need not additionally set up higher equipment of required precision or production line, saves cost of manufacture and improves volume production efficient.
Another purpose of the present invention is to provide a kind of chip-type wave-filtering assembly, and Miniaturizable and array design and produce, and can solve the problem of real application systems usage space.
In order to achieve the above object, the invention provides a kind of in an end earth system circuit and in the chip-type wave-filtering assembly of other end ground connection.The two end electrodes that this chip-type wave-filtering assembly comprises the body with left and right sides both ends of the surface and is arranged at the described left and right sides both ends of the surface of this body respectively.Wherein, this body comprise first base material, by the first solid pattern be coated on first conductive layer on this first base material, covered with on this first conductive layer and be connected in the middle interlayer of this first base material, be coated with by the second solid pattern and be placed on second conductive layer on the interlayer in this and be arranged at second base material on this second conductive layer; This first conductive layer and this second conductive layer are electrically connected on described two end electrodes respectively, and this first conductive layer and this second conductive layer are mutual insulating, this first solid pattern and the second solid pattern and are the part crossover; Whereby, on this system line, form at least one and be the filter of maximum attenuation effect at special frequency channel from these wireless telecommunications.
According to chip-type wave-filtering assembly of the present invention, this special frequency channel that wherein can be the maximum attenuation effect is by the dielectric constant that interlayer possessed in this, crossover area, the shape of this crossover area or the quality factor of this chip-type wave-filtering assembly of thickness, this first solid pattern and this second solid pattern of interlayer are determined in this.
According to chip-type wave-filtering assembly of the present invention, wherein this first base material, second base material are made by insulating material.
According to chip-type wave-filtering assembly of the present invention, wherein this first base material is made by ceramic material, and this second base material is made by insulating polymeric material.
According to chip-type wave-filtering assembly of the present invention, should middle interlayer be that dielectric material is made wherein.
According to chip-type wave-filtering assembly of the present invention, wherein this first base material, this second base material be that dielectric material or semi-conducting material are made with this middle interlayer.
According to chip-type wave-filtering assembly of the present invention, wherein this body further comprises at least one stacking body, and this stacking body comprises middle interlayer and covers conductive layer on interlayer in this; This stacking body is stacked between this second conductive layer and this second base material in this body, and the conductive layer of this stacking body and this second, first conductive layer form staggered in regular turn setting.
According to chip-type wave-filtering assembly of the present invention, wherein this special frequency channel comprises that by about 700MHz be the frequency range of leading and having a predetermined decay intensity to about 1100MHz.
According to chip-type wave-filtering assembly of the present invention, wherein to have with 700MHz, 800MHz, 900MHz, 1000MHz or 1100MHz be that center decay and its decay intensity are the predetermined band of about 20dB to this special frequency channel.
According to chip-type wave-filtering assembly of the present invention, wherein this special frequency channel comprises that by about 1500MHz be the frequency range of leading and having a predetermined decay intensity to about 2200MHz.
According to chip-type wave-filtering assembly of the present invention, wherein to have with 1500MHz, 1600MHz, 1700MHz, 1800MHz, 1900MHz, 2000MHz, 2100MHz or 2200MHz be that center decay and its decay intensity are the predetermined band of about 20dB to this special frequency channel.
According to chip-type wave-filtering assembly of the present invention, wherein this special frequency channel comprises that by about 2.2GHz be the frequency range of leading and having a predetermined decay intensity to about 2.6GHz.
According to chip-type wave-filtering assembly of the present invention, wherein to have with 2.2GHz, 2.3GHz, 2.4GHz, 2.5GHz or 2.6GHz be that center decay and its decay intensity are the predetermined band of about 20dB to this special frequency channel.
This chip-type wave-filtering assembly utilization is by being scheduled to solid pattern coating and two conductive layers that overlap each other and being arranged at the middle interlayer that can be the different dielectric coefficient between this two conductive layer, make to have low-cost and this chip-type wave-filtering assembly of high-effect making concurrently, and in this chip-type wave-filtering assembly, form at least one and be the filter of maximum attenuation effect at special frequency channel.
Description of drawings
Fig. 1 is the schematic equivalent circuit of a known low-pass filtering assembly;
Figure 1A is the characteristic waveforms figure of this known low-pass filtering assembly;
Fig. 2 is the schematic equivalent circuit of another known low-pass filtering assembly;
Fig. 2 A is the characteristic waveforms figure of this known low-pass filtering assembly;
Fig. 2 B is the structural representation of this known low-pass filtering assembly;
Fig. 3 is the schematic equivalent circuit of chip-type wave-filtering assembly of the present invention;
Fig. 3 A is the characteristic waveforms figure of chip-type wave-filtering assembly of the present invention;
Fig. 4 is the structural representation of first embodiment of chip-type wave-filtering assembly of the present invention;
Fig. 5 is the structural representation of second embodiment of chip-type wave-filtering assembly of the present invention;
Fig. 6 is the structural representation of the 3rd embodiment of chip-type wave-filtering assembly of the present invention; And
Fig. 7 is the schematic equivalent circuit of the 4th embodiment of chip filtering type assembly of the present invention.
Wherein, description of reference numerals is as follows:
10b, 10 ' b inductance element 11b capacity cell
The cross conductive layer of interlayer 4b among the 3b
1 body, 2,3 termination electrodes
11 first base materials, 12 first conductive layers
Interlayer 14 second conductive layers in 13
15 second base materials, 30 inductance elements
31 capacity cells, 4 stacking bodies
Interlayer in 41 conductive layers 42
f
RSpecial frequency channel f
CCentre frequency
Embodiment
See also Fig. 3 and Fig. 3 A, the invention provides a kind of chip-type wave-filtering assembly, it has and is equivalent to the characteristic that an inductance element 30 is connected in series with capacity cell 31, utilize this chip-type wave-filtering assembly one end earth system circuit again, the Application Design of other end ground connection, can produce as shown in Figure 3A at special frequency channel f
RGive the characteristic of maximum attenuation effect, its centre frequency f
CCan be by formula f
C=1/ (2* π * √ LC) calculates and obtains; Wherein L is that inductance value, C are capacitance.Because this chip-type wave-filtering assembly is arranged on this system line and uses with the wireless telecommunications collocation, can be when this wireless communication signal transmitting-receiving, the frequency range that influences the wireless communication signal of this system line is maximum attenuation, avoids the signal of wireless communication signal and this system line to interfere with each other; When this system line is bonded to mobile phone, WLAN, the exhibition that may run into technology frequently comprises as follows: GSM (Global System For Mobile Communications, global system for mobile communications, frequency band is approximately with 900MHz, 1800MHz is main), CDMA (Code DivisionMultiple Access, code division multiple access, frequency band is approximately based on 1900MHz), DCS (frequency band is approximately based on 1700MHz), PCS (Personal Communications Services, person communication system, frequency band is approximately based on 1900MHz), 3G (3rd Generation, third generation mobile phone, and keep the 3G system according near the frequency range the ITU meeting appointment 2000MHz), WLAN (WirelessLAN, WLAN, frequency band is about 2.4GHz and 5.0～5.8GHz), Bluetooth (IEEE802.11 series, frequency band is approximately based on 2.4GHz) or the like, this special frequency channel that then need be maximum attenuation is looked closely this wireless communication signal and difference is arranged; Therefore, this special frequency channel can be followed and not limit to above-mentioned wireless telecommunications specification and determine, for example: comprise with 900MHz being the predetermined band at center, be the predetermined band at center, be the predetermined band at center, be the predetermined band at center, be the predetermined band at center with 2000MHz or be the predetermined band at center or the like with 2.4GHz, promptly represent this centre frequency f with 1900MHz with 1800MHz with 1700MHz
CDrop on communication specifications such as 900MHz, 1700MHz, 1800MHz, 1900MHz or 2.4GHz.In addition, matching problem for the fit end, each predetermined band may respectively extend a predetermined secondary frequency band in front and back, for example: with 900MHz is the extensible scope that is 700MHz to 1100MHz of predetermined band at center, then can further to develop with 700MHz be the predetermined band at center, be the predetermined band at center with 800MHz, be the predetermined band at center with 1000MHz, be the predetermined band at center with 1100MHz; By that analogy, with 1700MHz, 1800MHz, 1900MHz, 2000MHz is the extensible scope that is 1500MHz to 2200MHz of predetermined band at center, then can further to develop with 1500MHz be the predetermined band at center, be the predetermined band at center with 1600MHz, be the predetermined band at center with 2100MHz, be the predetermined band at center with 2200MHz; With 2.4GHz is the extensible scope that is 2.2GHz to 2.6GHz of predetermined band at center, then can further to develop with 2.2GHz be the predetermined band at center, be the predetermined band at center with 2.3GHz, be the predetermined band at center with 2.5GHz, be the predetermined band at center with 2.6GHz; Above-mentioned communication specification all can or overlap each other by the predetermined secondary frequency band that extends, avoids disturbing with certain protection system circuit.Moreover, main purpose of the present invention is to be the maximum attenuation effect at this special frequency channel, its predetermined decay intensity can be about 20dB, and 20dB is the decay intensity that present industry is usually assert, and should predetermined decay intensity is not subject to 20dB and can sets by client demand; Therefore, be that the predetermined band at center is an example with 700MHz, this special frequency channel is for being that center decay and its decay intensity are the predetermined band of about 20dB with 700MHz; All the other predetermined bands all can repeat no more by that analogy.
See also Fig. 4 to shown in Figure 7, be every enforcement aspect of chip-type wave-filtering assembly of the present invention.Consult Fig. 4 and Fig. 5, the two end electrodes 2,3 that this chip-type wave-filtering assembly comprises the body 1 with left and right sides both ends of the surface and is arranged at the described left and right sides both ends of the surface of this body 1 respectively.Wherein, this body 1 comprise first base material 11, by at least one first solid pattern be coated on first conductive layer 12 on this first base material 11, covered with on this first conductive layer 12 and be connected in the middle interlayer 13 of this first base material 11, be coated with by at least one second solid pattern and be placed on second conductive layer 14 on the interlayer 13 in this and be arranged at second base material 15 on this second conductive layer 14.
Wherein, the quantity of this second solid pattern is corresponding to the quantity setting of this first solid pattern, is to arrange in pairs or groups one to one by this first and second solid pattern to be the filter of maximum attenuation effect at the special frequency channel from these wireless telecommunications to form one or more on this system line.This first conductive layer 12 is electrically connected on described two end electrodes 2,3 respectively with this second conductive layer 14, and this first conductive layer 12 is mutual insulating and this first solid pattern and this second solid pattern with this second conductive layer 14 and is part crossover (overlap).As mentioned above, this first and second pattern all is coated with in solid mode, so avoid live width that prior art discloses make the difficulty of the required precision that meets with and insufficient space; In addition, avoid board, remove and avoid additionally developing new equipment, still can save cost of manufacture, can make, quicken to import manufacturing process and improve make efficiency with existing equipment and technology with the high accuracy making.
This special frequency channel that this chip-type wave-filtering assembly can present the maximum attenuation effect is the dielectric constant (polarization phenomena that each material can react for electric field) that possessed by interlayer in this 13, crossover area, the shape (specific wavelength can produce resonance and form standing wave in material, whether the shape of this crossover area is relevant with this specific wavelength as can be known) or the quality factor (Quality Factor) of this chip-type wave-filtering assembly of this crossover area of thickness, this first solid pattern and this second solid pattern of interlayer 13 determines in this.
First embodiment as Fig. 4, this first base material 11 is made by ceramic material, this second base material 15 is made by insulating polymeric material, interlayer 13 can be made by dielectric material (as ceramic material) in being somebody's turn to do, this chip-type wave-filtering assembly of present embodiment can be made in the thick-film type printing, makes this chip-type wave-filtering assembly have the stray inductance of capacitance characteristic and corresponding generation.Second embodiment as shown in Figure 5; this chip-type wave-filtering assembly can be made by the lamination type processing procedure; this first base material 11, this second base material 15 with should in interlayer 13 be that ceramic material or semi-conducting material are made, make this chip-type wave-filtering assembly except that capacitance characteristic and inductance characteristic, still hinder the function of characteristic with overvoltage protection characteristic or change.
In response to the middle interlayer 13 of being somebody's turn to do of different dielectric characteristic, this chip-type wave-filtering assembly may be implemented in the multiple-level stack mode.As the 3rd embodiment of Fig. 6, this body 1 comprises that further at least one stacking body 4 is stacked between this second conductive layer 14 and this second base material 15 of this body 1; This stacking body 4 comprises in one interlayer 42 and covers conductive layer on interlayer 42 41 in this that conductive layer 41 of this stacking body 4 forms staggered in regular turn setting with this second, first conductive layer 14,12; When piling up a stacking body 4, this conductive layer 41 be electrically connected on described left and right sides two end electrodes 2,3 one of them; When piling up plural this stacking body 4, this conductive layer 41 can be electrically connected described left and right sides two end electrodes 2,3 in regular turn respectively.This conductive layer 41 with should in the manufacturing materials of interlayer 42 and production method follow the processing procedure of this body 1 (can as first or second embodiment).
The conductive layer 41 that then discloses two stacking body 4, two stacking bodies 4 in the 3rd embodiment is in regular turn with this first conductive layer 12, second conductive layer 14 of this body 1 and is crisscross arranged, be separated with between forming between the above-mentioned conductive layer whereby above-mentioned in interlayer 42; Adjacent in twos described stacking body 4 is electrically connected with this conductive layer 41 of this two end electrodes 2,3 respectively.
The 4th embodiment as shown in Figure 7 discloses the schematic equivalent circuit that four filters are provided in this chip-type wave-filtering assembly, when this first conductive layer 12, this second conductive layer 14 follow four first solid patterns of coating, this second solid pattern respectively in the single component encapsulation, in this chip-type wave-filtering assembly, form four filters whereby, and be integrated into array type (Array Type) simultaneously, advance to solve the problem of real application systems usage space; As Fig. 7, it can be applied to the filtering application of a, b, four groups of different output inputs of c, d simultaneously.
By as can be known aforementioned, this chip-type wave-filtering assembly of the present invention has following advantage:
1. the solid pattern that applies according to different demands and overlap each other can omit needs the higher graph thinning of precision to make, not only avoid additionally developing new equipment, still can save cost of manufacture, and can make, quicken to import manufacture craft and improve make efficiency with existing equipment and technology.
2. the middle interlayer by being the different dielectric coefficient in twos between conductive layer, the crossover area, the component design such as shape of this crossover area of thickness, this first solid pattern and this second solid pattern of interlayer 13 in this, can select to make according to the special frequency channel of different demands, to adapt to the wireless telecommunication system of different size.
The above only is a preferable possible embodiments of the present invention, non-ly limits to claim of the present invention with this, so the equivalent structure that all application specification of the present invention or accompanying drawing content are carried out changes, all in like manner all is contained in the scope of the present invention.
Claims (13)
1. chip-type wave-filtering assembly, in an end earth system circuit and in other end ground connection, this system line and wireless telecommunications collocation are used; It is characterized in that this chip-type wave-filtering assembly comprises:
Body has left and right sides both ends of the surface, and this body comprises:
First base material;
First conductive layer is coated on this first base material by at least one first solid pattern;
In interlayer, covered with on this first conductive layer and be connected in this first base material;
Second conductive layer is coated with by at least one second solid pattern and is placed on this second base material, and wherein, the quantity of this second solid pattern is corresponding to this first solid pattern; And
Second base material is arranged on this second conductive layer; And
Two end electrodes is arranged at the described left and right sides both ends of the surface of this body respectively;
Wherein, this first conductive layer and this second conductive layer are electrically connected on this two end electrodes, this first conductive layer and this second conductive layer mutual insulating and this first solid pattern and this second solid pattern respectively and are the part crossover;
Whereby, on this system line, form at least one and be the filter of maximum attenuation effect at special frequency channel from these wireless telecommunications.
2. chip-type wave-filtering assembly as claimed in claim 1, this special frequency channel that it is characterized in that being the maximum attenuation effect are by the dielectric constant that interlayer possessed in this, crossover area, the shape of this crossover area or the quality factor of this chip-type wave-filtering assembly of thickness, this first solid pattern and this second solid pattern of interlayer are determined in this.
3. chip-type wave-filtering assembly as claimed in claim 1 is characterized in that this first base material, second base material are made by insulating material.
4. chip-type wave-filtering assembly as claimed in claim 3 is characterized in that this first base material is made by ceramic material, and this second base material is made by insulating polymeric material.
5. chip-type wave-filtering assembly as claimed in claim 3 is characterized in that interlayer is that dielectric material is made in this.
6. chip-type wave-filtering assembly as claimed in claim 1, it is characterized in that this first base material, this second base material and being somebody's turn to do middle interlayer be that dielectric material or semi-conducting material are made.
7. chip-type wave-filtering assembly as claimed in claim 6 is characterized in that this body further comprises at least one stacking body, and this stacking body comprises middle interlayer and covers conductive layer on interlayer in this; This stacking body is stacked between this second conductive layer and this second base material in this body, and the conductive layer of this stacking body and this second, first conductive layer form staggered in regular turn setting.
8. chip-type wave-filtering assembly as claimed in claim 1 is characterized in that this special frequency channel comprises that by about 700MHz be the frequency range of leading and having a predetermined decay intensity to about 1100MHz.
9. chip-type wave-filtering assembly as claimed in claim 8 is characterized in that it is that center decay and its decay intensity are the predetermined band of about 20dB that this special frequency channel has with 700MHz, 800MHz, 900MHz, 1000MHz or 1100MHz.
10. chip-type wave-filtering assembly as claimed in claim 1 is characterized in that this special frequency channel comprises that by about 1500MHz be the frequency range of leading and having a predetermined decay intensity to about 2200MHz.
11., it is characterized in that it is that center decay and its decay intensity are the predetermined band of about 20dB that this special frequency channel has with 1500MHz, 1600MHz, 1700MHz, 1800MHz, 1900MHz, 2000MHz, 2100MHz or 2200MHz as the chip-type wave-filtering assembly of claim 10.
12. chip-type wave-filtering assembly as claimed in claim 1 is characterized in that this special frequency channel comprises that by about 2.2GHz be the frequency range of leading and having a predetermined decay intensity to about 2.6GHz.
13., it is characterized in that it is that center decay and its decay intensity are the predetermined band of about 20dB that this special frequency channel has with 2.2GHz, 2.3GHz, 2.4GHz, 2.5GHz or 2.6GHz as the chip-type wave-filtering assembly of claim 12.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510007027 CN1815883A (en) | 2005-01-31 | 2005-01-31 | Chip-type wave-filtering assembly |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510007027 CN1815883A (en) | 2005-01-31 | 2005-01-31 | Chip-type wave-filtering assembly |
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| CN1815883A true CN1815883A (en) | 2006-08-09 |
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| CN 200510007027 Pending CN1815883A (en) | 2005-01-31 | 2005-01-31 | Chip-type wave-filtering assembly |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112953592A (en) * | 2021-01-22 | 2021-06-11 | RealMe重庆移动通信有限公司 | Radio frequency circuit, electronic equipment and transmission method of radio frequency signal |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112953592A (en) * | 2021-01-22 | 2021-06-11 | RealMe重庆移动通信有限公司 | Radio frequency circuit, electronic equipment and transmission method of radio frequency signal |
| CN112953592B (en) * | 2021-01-22 | 2023-04-07 | RealMe重庆移动通信有限公司 | Radio frequency circuit, electronic equipment and transmission method of radio frequency signal |
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