1239674 九、發明說明： 【發明所屬之技術領域】 本發明係有關於一種晶片裂^慮波元件’尤其是一種於 特定頻段呈最大衰減特性之晶#型濾、波元件。 【先前技術】 隨著行動工作者趨勢的出現’外觀尺寸的輕薄短小、 以及將無線通訊功能整合到資訊數位線路產品的發展勢成 必然！通訊業者無不在晶片組乎一化、減少耗電量以及晶 片體積的縮小等方向努力，以配合多媒體表現能力及通訊 技術的整合。然，當資訊數位系統的功能被逐漸提昇之際， 附帶數位信號的頻寬相對升高；此外，產品微型化的整合 設計，此一更高頻寬數位信號的諧波與不斷推陳出新的無 線通訊訊號（GSM、CDMA、PCS、3G ' WLAN等等），將會於 系統内部彼此干擾產生訊號失真的現象；是故，在系統線 路設計上的資訊數位線路，必須加入針對特定頻率的信號 衰減線路設計，避免收發無線通訊訊號時，對該資訊數值 線路存在之訊號互相干擾。 以典型之热線通訊設備一手機一為例，當顯示螢幕功 度顯示幕，主系統與顯示幕驅動機體 之間的彳&號頻見大幅升高，而因為產品結構微型化讲 天線、射頻⑽線路與上述信號線之間的ϊ 顯示常嚴苛的限制’終致造成射頻線路與 良’必須在畫面顯示信號上設計針對狀‘=== 1239674 哀減線路，以解決這種彼此干擾的問題。 矿 I最習見之具特定頻率衰減特性濾、波線路的設計技 ?二Ϊ如第—圖與第一A圖所示，係表示個別使用電感1〇 ^氣谷11構成LC濾波線路（低通滤波），可針對抓線路 4寸^頻率或頻段之信號或諧波加以濾除；然，第一圖所示 路設計需同時運用電容與電感，因其均為具有電容值 或笔感/阻抗值之元件，以電容或電感兩種特性之匹配設計 ，到濾除特定頻率或頻段之功能；因為一般資訊數位線路 信號線的數量相當多，以一條資訊數位信號線即搭配一顆 電感與一顆電容之設計方式極耗佔空間，顯然無法符合短 薄之應用趨勢，即使是利用微型化尺寸之晶片型多線 排型元件（Array Type)元件，對於必須微型化設計的系 統仍然會產生應用空間的問題。 另一習見做法則是如第二圖至第二B圖所示，使用具 有特殊結構’如T型濾波功能之晶片型整合元件（元件本 1具有L_C-L結構，結合兩電感性元件10b、10，b與一電 *性兀件llb之低通濾波器，參考第二A圖），來達到RF 、、泉路特疋頻率或頰段之信號或諧波加以濾除之功能；如第 圖所不之元件結構示意圖，該τ型濾波功能之晶片型 整合元件係包括第—基材2b、於該第一基材lb上一惻排 =設置之複數第HlGb與第二電感10，b、塗蓋隹該 第一電感性元件1 Ob與該第二電感性元件10，b之介電層 3b、佈設於該介電層3b上之十字型導電層4b、以及覆設 於該十字型導電層4b上之第二基材（未圖示），是以形成 =具有特殊結構之濾波功能之整合型元件。其中，該第一 電感性元件10b與該第二電感性元件1〇，b係製作呈卞面 1239674 螺旋狀；該第一電感性元件10b係設置於該第一基材lb 上之一側；該複數第二電感性元件10’ b係設置於該第一 基材lb上之另一側、且藉複數排線一對一電性連接於該複 數第一電感性元件10b，形成每一第一電感性元件10b與 第二電感性元件10’ b呈串聯狀態；該十字型導電層4b 的設置，在呈串聯狀態之該第一電感性元件10b與第二電 感性元件10’ b之間更形成有了一電容性元件lib，且藉 由該十字型導電層4b向元件外部延伸與外界或電路板（未 圖示）呈導通狀態，俾讓該特定頻率之信號接地，達成該 特定頻率信號被過濾之功能。如第二B圖所示之該T型濾 波功能之晶片型整合元件，藉由功能整合結構的晶片型多 線排化以及元件尺寸的微型化，可以有效解決微型化設計 系統必須面對的應用空間問題，但是對於微型化晶片型元 件本身，在製作時易受限於製作精度難以提昇（如平面螺 旋狀之電感設置時需要精細之螺旋線）、空間不足（如螺旋 數目決定電感值，但螺旋數目卻因塗佈空間不足而有數量 限制，進一步限縮了設計範圍）等問題，以致無法與需求 規格配合，增加設計上的複雜度以及製程的困難度。 緣是，發明人有感上述缺失，乃潛心研究並配合學理 之運用，提出一種設計合理且廣泛且有效改善上述缺失之 本發明。 【發明内容】 本發明之主要目的在於提供一種晶片型濾波元件，可 達到針對特定頻段設計具有最大衰減特性之濾波要求，並 以最簡化結構晶片型元件即可符合應用。 1239674 本發明之次一目的在於提供一種晶片型濾波元件，係 應用現有製程與設備即可製作，無須額外增設精度要求更 高之設備或生產線，節省製作成本與提昇量產效率。 本發明之又一目的在於提供一種晶片型濾波元件，係 可小型化與多線排型化設計與生產，可解決實際應用系統 使用空間的問題。 為了達成上述目的，本發明提供於一端搭接系統線 路、且於另一端接地之一種晶片型濾波元件。該晶片型濾 波元件係包含具有左右兩端面之本體、以及分別設置於該 本體之該左右兩端面之兩端電極。其中，該本體係包括第 一基材、按第一實心圖樣塗覆於該第一基材上之第一導電 層、覆滿於該第一導電層上且連接於該第一基材之中夾層 按第二實心圖樣塗蓋於該中夾層上之第二導電層、以及設 置於該第二導電層上之第二基材；該第一導電層與該第二 導電層係分別電連接於該兩端電極，該第一導電層與該第 二導電層係呈互相絕緣、該第一實心圖樣與第二實心圖樣 呈部分交疊；藉此，於該系統線路上形成至少一個針對來 自該無線通訊之特定頻段呈最大衰減效應之濾波器。 為了使貴審查委員能更進一步瞭解本發明之特徵及 技術内容，請參閱以下有關本發明之詳細說明，然而所記 載内容僅提供參考與說明用，並非用來對本發明加以限制 者。 【實施方式】 請參閱第三圖與第三A圖，本發明提供一種晶片型濾 波元件，其具有相當於一電感性元件30與電容性元件31 1239674 串接之特性，再利用該晶片型濾波元件一端搭接系統線 路’另一端接地之應用設計，可產生如第三A圖所示之針 對4寸疋頻段fR給予最大衰減效應之特性，其中心頻率 係可以由公式推算得之；其中L為電 感值、C為電容值。由於該晶片型濾波元件係設置於該系 統線路上與無線通訊搭配應用，能夠在該無線通訊訊號收 發時’將影響該系統線路之無線通訊訊號之頻段呈最大衰 減’避免無線通訊訊號與該系統線路之信號互相干擾；當 5亥系統線路結合至手機、無線區域網路，可能遇有的展頻 技術包括如下所示：GSM (Global System For Mobile1239674 IX. Description of the invention: [Technical field to which the invention belongs] The present invention relates to a wafer cracking wave element ', especially a crystal #type filter and wave element that exhibits maximum attenuation characteristics in a specific frequency band. [Previous technology] With the emergence of the trend of mobile workers, the appearance size is thin and short, and the development of integrating wireless communication functions into information digital circuit products is inevitable! The telecommunications industry is making efforts to integrate the chipset, reduce power consumption, and shrink the size of the chip to match the integration of multimedia performance and communication technology. However, when the function of the information digital system is gradually improved, the bandwidth of the digital signal attached is relatively increased. In addition, the integrated design of the product miniaturization, the harmonics of this higher frequency digital signal and the continuous development of new wireless communication signals ( GSM, CDMA, PCS, 3G 'WLAN, etc.), will interfere with each other within the system to cause signal distortion; therefore, the digital lines of information in the system line design must be designed for signal attenuation lines for specific frequencies. When transmitting and receiving wireless communication signals, avoid the interference of the signals existing on the information value line. Taking a typical hotline communication device, a mobile phone, as an example, when the screen power display screen is displayed, the frequency of 彳 & between the main system and the display drive body is greatly increased. Because of the miniaturization of the product structure, antennas, The display between the radio frequency line and the above signal line is often severely restricted. 'Finally, the radio frequency line is good and good.' You must design a targeted line on the screen display signal. '=== 1239674 Reduce the line to solve this mutual interference The problem. Mine I is most familiar with the design techniques of filtering and wave lines with specific frequency attenuation characteristics. As shown in the first figure and the first A figure, it means that the LC filter circuit (low-pass) Filtering), which can filter out signals or harmonics of the 4 inch frequency or frequency band of the catch line; however, the circuit design shown in the first figure requires the use of capacitors and inductors at the same time, because they have a capacitance value or stroke / impedance The value of components is designed by matching the two characteristics of capacitance or inductance to the function of filtering specific frequencies or frequency bands. Because the number of general information digital line signal lines is quite large, one information digital signal line is matched with an inductor and a The design method of a capacitor consumes a lot of space and obviously cannot meet the short and thin application trend. Even the use of miniaturized chip-type multi-line type components (Array Type) components will still produce applications for systems that must be miniaturized. The question of space. Another common practice is to use a chip-type integrated component with a special structure such as a T-type filtering function as shown in Figures 2 to 2B (the component book 1 has an L_C-L structure, combined with two inductive components 10b, 10, b and a low-pass filter of an electrical component llb (refer to Figure A), to achieve the function of filtering RF, quasi-pass frequency or buccal signal or harmonic; The schematic diagram of the component structure shown in the figure. The chip-type integrated component of the τ-type filtering function includes a first substrate 2b, a row on the first substrate lb = a plurality of HlGb and a second inductor 10, b provided. A dielectric layer 3b covering the first inductive element 1 Ob and the second inductive element 10, b, a cross-shaped conductive layer 4b disposed on the dielectric layer 3b, and a cross-shaped conductive layer 4b The second substrate (not shown) on the conductive layer 4b is formed as an integrated element with a filtering function with a special structure. Wherein, the first inductive element 10b and the second inductive element 10, b are fabricated in a spiral shape of 1236974; the first inductive element 10b is disposed on one side of the first substrate lb; The plurality of second inductive elements 10 ′ b are disposed on the other side of the first substrate lb, and are electrically connected to the plurality of first inductive elements 10 b one-to-one by a plurality of cables, forming each first An inductive element 10b and the second inductive element 10'b are in a series state; the cross-shaped conductive layer 4b is disposed between the first inductive element 10b and the second inductive element 10'b in a series state. A capacitive element lib is formed, and the cross-shaped conductive layer 4b is extended to the outside of the element to be in a conducting state with the outside world or a circuit board (not shown), so that the signal of the specific frequency is grounded to achieve the specific frequency. Signal filtering function. As shown in the second figure B, the chip-type integrated component of the T-type filtering function can effectively solve the applications that the miniaturized design system must face through the chip-type multi-line arrangement of the function integration structure and the miniaturization of the component size. Space problems, but for miniaturized wafer-type components themselves, it is easy to be limited during production when the production accuracy is difficult to improve (such as the need for a fine spiral when setting a planar spiral inductor), and the space is insufficient (such as the number of spirals determines the inductance value, but However, the number of spirals is limited due to insufficient coating space, which further limits the design range) and other problems, so that it cannot match the required specifications, increasing the complexity of the design and the difficulty of the process. The reason is that the inventor felt the aforesaid shortcomings, and devoted himself to studying and cooperating with the application of theories to propose a present invention with reasonable design, extensive and effective improvement of the aforesaid shortcomings. [Summary of the Invention] The main object of the present invention is to provide a chip-type filter element, which can meet the filtering requirements for designing a specific frequency band with maximum attenuation characteristics, and the chip-type element with the simplest structure can meet the application. 1239674 A second objective of the present invention is to provide a wafer-type filter element, which can be manufactured by using existing processes and equipment, without the need for additional equipment or production lines with higher accuracy requirements, saving manufacturing costs and improving mass production efficiency. Another object of the present invention is to provide a chip-type filter element, which can be miniaturized and multi-line-type designed and manufactured, and can solve the problem of the space used by practical application systems. In order to achieve the above object, the present invention provides a chip-type filter element which is connected to a system line at one end and is grounded at the other end. The wafer-type filter element includes a main body having left and right end surfaces, and two ends of electrodes provided on the left and right end surfaces of the body, respectively. Wherein, the system includes a first substrate, a first conductive layer coated on the first substrate according to a first solid pattern, covering the first conductive layer and being connected to the first substrate. The interlayer is coated with a second conductive layer on the middle interlayer and a second substrate disposed on the second conductive layer according to a second solid pattern; the first conductive layer and the second conductive layer are respectively electrically connected to The two ends of the electrode, the first conductive layer and the second conductive layer are insulated from each other, and the first solid pattern and the second solid pattern partially overlap; thereby, at least one of A filter with a maximum attenuation effect in a specific frequency band of wireless communication. In order to allow your reviewers to further understand the features and technical contents of the present invention, please refer to the following detailed description of the present invention. However, the contents are provided for reference and explanation only, and are not intended to limit the present invention. [Embodiment] Please refer to FIG. 3 and FIG. 3A. The present invention provides a chip-type filter element, which has the characteristics equivalent to a series connection of an inductive element 30 and a capacitive element 31 1239674, and then uses the chip-type filter. The application design that the component is connected to the system line at one end and grounded at the other end can produce the characteristic of giving the maximum attenuation effect to the 4 ”chirp band fR as shown in Figure 3A. Its center frequency can be calculated by the formula; where L Is the inductance value and C is the capacitance value. Because the chip-type filter element is arranged on the system line and used with wireless communication, it can 'maximize the frequency band of the wireless communication signal that affects the system line when the wireless communication signal is sent and received' to avoid the wireless communication signal and the system The signals of the lines interfere with each other. When the 5H system line is combined with mobile phones and wireless LANs, the spread spectrum technologies that may be encountered include the following: GSM (Global System For Mobile
Communications，全球移動通信系統，頻帶約以9〇〇mHz、 1800 MHz 為主）、CDMA ( Code Division Multiple Access， 分碼多重存取，頻帶約以l9〇〇 MHz為主）、DCS (頻帶約 Π00 MHz 為主）、PCS( Personal Communications Services， 個人通訊系統，頻帶約以1900 MHZ為主）、3G ( 3rdCommunications, the global mobile communications system, with a frequency band of approximately 900 mHz and 1800 MHz, CDMA (Code Division Multiple Access, code division multiple access, with a frequency band of approximately 190 MHz), and DCS (frequency band of approximately Π00 MHz-based), PCS (Personal Communications Services, personal communication system, frequency band around 1900 MHZ-based), 3G (3rd
Generation，第三代行動電話，且根據ITU會議指定2000 MHz附近的頻寬保留給3G系統）、WUN (Wireless LAN， 無線區域網路，頻帶約為2. 4 GHz以及5· 0〜5· 8 GHz)、Generation, the third generation of mobile phones, and according to the ITU conference designated the bandwidth around 2000 MHz reserved for 3G systems), WUN (Wireless LAN, wireless local area network, the frequency band is about 2. 4 GHz and 5.0 · 5 ~ 8 GHz),
Bluetooth (IEEE 802. 11 系列，頻帶約 2· 4 GHz 為主）等 等’則需呈最大衰減之該特定頻段端視該無線通訊訊號而 有不同；是以，該特定頻段可依循且不侷限上述之無線通 訊規格而決定，例如：包括以9〇〇 MHz為中心之預定頻段、 以1700 MHz為中心之預定頻段、以ι8〇〇 MHz為中心之預 定頻段、以1900 MHz為中心之預定頻段、以2〇〇〇 mHz為 中心之預定頻段、或以2· 4 GHz為中心之預定頻段等等， 即表示該中心頻率fc落在9〇〇 MHz、1700 MHz、1800 MHz、 1239674 1900 MHz或2· 4 GHz等通訊規格。此外，為配合客戶端的 匹配問題，每一預定頻段係可能前後各延伸一預定副頻 段，例如：以900 MHz為中心之預定頻段係可延伸呈700 MHz 至1100 MHz之範圍，則可進一步開發出以7〇〇 MHz為中心 之預定頻段、以800 MHz為中心之預定頻段、以1〇〇〇 MHz 為中心之預定頻段、以11 〇 〇 MHz為中心之預定頻段；以此 類推，以 1700 MHz、1800 MHz、1900 MHz、2000 MHz 為中 心之預定頻段係可延伸呈1500 MHz至2200 MHz之範圍， 則可進一步開發出以15〇〇 MHz為中心之預定頻段、以1600 丽z為中心之預定頻段、以21〇〇 MHz為中心之預定頻段、 以2200丽z為中心之預定頻段；以2 4GHz為中心之預定 頻段係可延伸呈2· 2 GHz至2.6 GHz之範圍，則可進一步 開發出以2· 2 GHz為中心之預定頻段、以2. 3GHz為中心 之預疋頻段、以2. 5 GHz為中心之預定頻段、以2. 6 GHz 為中心之預定頻段；上述通訊規格均可藉由延伸的預定副 頻段或互相交疊，以確實保護系統線路免於干擾。再者， 本t，之主要目的係針對該特定頻段呈最大衰減效應，其 ^疋，減強度係可為約2〇仙，2〇仙係為目前業界通常認 2的衰，強度’且該預定衰減強度係不受限於20 dB、且 葙：Ϊ二戶端需求設定；是以，“ 700 MHz為中心之預定 :、二二、騎定頻段係為以700 MHz為中心衰減、且其 =為約2〇 dB之預定頻段；其餘預定頻段均此 類推，不再贅述。 明多閲弟四圖至第七圖所示 _ 濾波元件之久㈣m Λ 為本I明之為晶片? 型濾波二 苓閱第四圖與第五圖，該晶 " ’糸包含具有左右兩端面之本體1、以及分別1 10 1239674 置方、及本版1之该左右兩端面之兩端電極2、3。其中，該 本，1係包㈣-基材u、按至少—第_實心圖樣塗覆於 ，玄第-基材11上之第一導電層12、覆滿於該第一導電層 12上且連接於該第—基材丨丨之中夾層η、按至少一第二 實心圖，塗蓋於該中失層13上之第二導電層14、以及設 置於該第二導電層14上之第二基材15。 、/、= °亥第一貝心圖樣之數量係相應於該第一實心圖 k之數里叹置，藉由該第一與第二實心圖樣呈一對一搭配 以方、m線路上形成—個或—個以上針對來自該無線通 訊定頻段呈最大衰減效應之濾波器。該第^ 導電層12 ，第層14係分別電連接於該兩端電極2、3，該 第一導電層12盥該第-遑垂a，， —d / /、弟—V電層W係呈互相絕緣、且該第 士 貫心圖樣呈部分交4 (〇veriap)。 與第二圖樣係均以實心方式塗佈，進以 =:::Γ露之線寬製作所遭遇精度要求與空間不 門精度製作之機台，除避免額外 作，加速導入製程與提高製$率能以現有設備與製程製 該晶片型濾波元件所能呈m : 係由該中夾層13所具備之介取^大衰減效應之該特定頻段 反應之極化現象）、該中夾^ Y/數（各材料對於電場所能 與該第二實心圖樣之交疊面^《厚度、該第-實心圖樣 波長可在材料中產生共:、該交疊面積之形狀（特定 狀與該特m是否成形相^波’可知該交疊面積的形 質因子（Quality Fact〇r) 該晶片型濾波元件之品 如第四圖之第一實施例，誃L定。 Λ乐 ''基材11係由陶瓷材料 11 1239674 所製成，該第二基材15係由高分子絕緣材料所製成，該中 夾層13係可由介電材料（如陶瓷材料）所製成，本實施例 之該晶片型濾波元件係可以厚膜式印刷來製作，俾使該晶 片型濾波元件具有電容特性以及相應產生之寄生電感。如 第五圖所示之第二實施例，該晶片型濾波元件係可以積層 式製程來製作，該第一基材11、該第二基材15與該中夾 層13係為陶瓷材料或半導體材料所製成，俾使該晶片型濾 波元件除電容特性與電感特性之外、尚兼具有過電壓保護 特性或變阻特性之功能。 因應不同介電特性之該中夾層13,該晶片型濾波元件 係可能以多層堆疊方式實施。如第六圖之第三實施例，該 本體1進一步包括至少一層疊體4堆疊於該本體1之該第 二導電層14與該第二基材15之間；該層疊體4係包括一 中夾層42以及覆設於該中夾層42上之導電層41，該層疊 體4之導電層41與該第二、第一導電層12、14形成依序 交錯之設置；當堆疊一個層疊體4時，該導電層41係電性 連接於該左右兩端電極2、3其中之一；當堆疊兩個以上之 該層疊體4，該導電層41係可依序分別電性連接該左右兩 端電極2、3。該導電層41與該中夾層42之製作材料與製 作方式係依循該本體1(可如第一或第二實施例）之製程。 於第三實施例内則揭露兩該層疊體4兩層疊體4之導 電層41與該本體1之該第一導電層12、第二導電層14呈 依序交錯設置，藉此形成上述導電層之間間隔有上述中夾 層42 ;兩兩相鄰之該層疊體4係分別與該兩端電極2、3 之該導電層41電性連接。 如第七圖之第四實施例係揭露該晶片型濾波元件内提 12 1239674 供四個濾波器之等效電路示意圖，當該第一導電層12、該 第二導電層14分別依循塗覆四個第一實心圖樣、該第二實 心圖樣於單一元件封裝内，藉此於該晶片型濾波元件内形 成四個濾波器，且同時整合呈多線排型（Array Type)，進 以解決實際應用系統使用空間的問題；如第七圖，其可同 時應用於a、b、c、d四組不同輸出輸入之濾波應用。 由前述可知，本發明之該晶片型渡波元件具有以下之 優點： 1 .依照不同需求而塗覆且互相交疊之實心圖樣可省 略需精度較高之細線化製作，不僅避免額外開發新設備， 尚可節省製作成本，並能以現有設備與製程製作，加速導 入製程與提高製作效率。 2 .通過兩兩導電層間呈不同介電係數之中夾層、該中 夾層13之厚度、該第一實心圖樣與該第二實心圖樣之交疊 面積、該交疊面積之形狀等元件設計，可依不同需求之特 定頻段選擇製作，以因應不同規格之無線通訊系統。 惟以上所述僅為本發明之較佳可行實施例，非因此即 拘限本發明之專利範圍，故舉凡應用本發明說明書或圖式 内容所為之等效結構變化，均同理皆包含於本發明之範圍 内，以保障發明者之權益，於此陳明。 【圖式簡單說明】 第一圖，係為一習知低通濾波元件之等效電路示意 圖； 第一A圖，係為該習知低通濾波元件之特性波形圖； 13 !239674 第二圖， 第二A圖， 第二B圖， 第三圖， 第三A圖， 第四圖， 第五圖， 第六圖， 第七圖， 係為另一習知低通濾波元件之等致電 一 圖； 示意 係為該習知低通滤波元件之特性波开3 . 係為該習知低通濾波元件之結構示咅图· 係為本發明晶片型濾'波元件之等效電路示立 圖； 不思 係為本發明晶片型濾波元件之特性波形圖· 係為本發明晶片型濾波元件之第一實施=之 結構示意圖； 係為本發明晶片型濾波元件之第二實施例之 結構不意圖； 係為本發明晶片型濾波元件之第三實施例之 結構示意圖；以及 係為本發明晶片濾波型元件之第四實施例之 等效電路示意圖。 ^主要元件符號說明】 第一習知 電感 第二習知 10 電容 11 電感性元件 中夾層 l〇b、10，b 3b 電容性元件 十字型導電層 lib 4b 本發明之晶片型濾波元件 14 1239674 本體 1 端電極 第一基材 11 第一導電層 中夾層 13 第二導電層 第二基材 15 電感性元件 電容性元件 31 層疊體 導電層 41 中夾層 特定頻段 f R 中心頻率Bluetooth (IEEE 802. 11 series, mainly with a frequency band of about 2.4 GHz), etc. 'The specific frequency band that requires the maximum attenuation varies depending on the wireless communication signal; therefore, the specific frequency band can be followed without limitation The above wireless communication specifications are determined, for example: including a predetermined frequency band centered at 900 MHz, a predetermined frequency band centered at 1700 MHz, a predetermined frequency band centered at ι 800 MHz, and a predetermined frequency band centered at 1900 MHz , A predetermined frequency band centered at 2000mHz, or a predetermined frequency band centered at 2.4 GHz, etc., it means that the center frequency fc falls at 900 MHz, 1700 MHz, 1800 MHz, 1239674 1900 MHz or Communication specifications such as 2.4 GHz. In addition, in order to meet the client's matching problem, each predetermined frequency band may be extended by a predetermined sub-band. For example, a predetermined frequency band centered at 900 MHz can be extended to a range of 700 MHz to 1100 MHz. A predetermined frequency band centered at 700 MHz, a predetermined frequency band centered at 800 MHz, a predetermined frequency band centered at 1000 MHz, and a predetermined frequency band centered at 11,000 MHz; and so on, at 1700 MHz The predetermined frequency bands centered at 1800 MHz, 1900 MHz, and 2000 MHz are in the range of 1500 MHz to 2200 MHz, and the predetermined frequency band centered at 15000 MHz and the predetermined centered center at 1600 MHz can be further developed. Frequency band, a predetermined frequency band centered at 2100 MHz, a predetermined frequency band centered at 2200 Liz; a predetermined frequency band centered at 24 GHz can be extended to a range of 2.2 GHz to 2.6 GHz, and it can be further developed A predetermined frequency band centered at 2.2 GHz, a pre-band frequency centered at 2.3 GHz, a predetermined frequency band centered at 2.5 GHz, and a predetermined frequency band centered at 2. 6 GHz; all of the above communication specifications can be borrowed by The extended predetermined sub-bands may overlap each other to securely protect system lines from interference. In addition, the main purpose of this t is to show the maximum attenuation effect for this specific frequency band. Its reduction strength can be about 20 cents, and the 20 cents is the attenuation generally recognized by the industry at present. The predetermined attenuation intensity is not limited to 20 dB, and 葙: Ϊ two client demand settings; based on, "700 MHz as the center of the predetermined :, two, two, the fixed frequency band is 700 MHz as the center of attenuation, and its = Is a predetermined frequency band of about 20dB; the rest of the predetermined frequency bands are the same, and will not be repeated. Please refer to Figure 4 to Figure 7 for more details. _ The long time of the filter element ㈣m Λ is the chip of the filter? As shown in Figures 4 and 5, the crystal " '糸 includes a main body 1 with left and right end surfaces, and 1 10 1239674 cubes, and two end electrodes 2, 3 of the left and right end surfaces of this version 1. Among them, the book, 1 is a package-substrate u, coated on at least the first solid pattern, the first conductive layer 12 on the first substrate 11 is covered with the first conductive layer 12 The second interlayer η connected to the first substrate 丨 丨 is coated on the second guide layer 13 on the middle loss layer 13 according to at least a second solid pattern. The electric layer 14 and the second base material 15 disposed on the second conductive layer 14. The number of first shell patterns is equivalent to the number of the first solid graph k, The first and second solid patterns are paired one-to-one with square or m lines to form one or more filters that have the greatest attenuation effect on the fixed frequency band from the wireless communication. The ^ conductive layer 12, the The layer 14 is electrically connected to the two electrodes 2 and 3, respectively, and the first conductive layer 12 is connected to the first -a, -d, /, and -V electrical layers W are insulated from each other, and the first The perforated pattern is partially delivered 4 (〇veriap). Both the second pattern and the second pattern are applied in a solid manner. Avoid extra work, speed up the introduction process and increase the production rate. The chip-type filter element can be produced with existing equipment and processes. M: It is the response of the specific frequency band that has a large attenuation effect in the middle sandwich 13. Polarization phenomenon), the middle ^ Y / number (each material can overlap with the second solid pattern for the electric field ^ "Thickness, the first-solid pattern wavelength can produce a total of: in the material, the shape of the overlap area (the specific shape and the special m form a phase ^ wave 'can know the shape factor of the overlap area ) The chip-type filter element is shown in the first embodiment of the fourth figure, and it is determined by L. The base material 11 is made of ceramic material 11 1239674, and the second substrate 15 is made of polymer insulation. The intermediate layer 13 can be made of a dielectric material (such as a ceramic material). The wafer-type filter element of this embodiment can be made by thick film printing so that the wafer-type filter element has a capacitance. Characteristics and corresponding parasitic inductance. As shown in the second embodiment shown in the fifth figure, the wafer-type filter element can be manufactured by a lamination process. The first substrate 11, the second substrate 15, and the interlayer 13 are made of a ceramic material or a semiconductor material. It is made so that the chip-type filter element has functions of overvoltage protection characteristic or variable resistance characteristic in addition to the capacitance characteristic and the inductance characteristic. According to the interlayer 13 having different dielectric characteristics, the chip-type filter element may be implemented in a multilayer stacking manner. As in the third embodiment of the sixth figure, the body 1 further includes at least one laminated body 4 stacked between the second conductive layer 14 and the second substrate 15 of the body 1; the laminated body 4 includes a middle The interlayer 42 and the conductive layer 41 overlying the middle interlayer 42. The conductive layer 41 of the laminated body 4 and the second and first conductive layers 12 and 14 are arranged in a staggered arrangement. When a laminated body 4 is stacked, The conductive layer 41 is electrically connected to one of the left and right electrodes 2 and 3. When two or more of the laminated body 4 are stacked, the conductive layer 41 is electrically connected to the left and right electrodes in order. 2, 3. The manufacturing materials and manufacturing methods of the conductive layer 41 and the intermediate interlayer 42 follow the manufacturing process of the main body 1 (which may be the same as the first or second embodiment). In the third embodiment, the two conductive layers 41 of the two laminated bodies 4 and the first conductive layer 12 and the second conductive layer 14 of the main body 1 are sequentially staggered, thereby forming the above conductive layers. The above-mentioned middle interlayer 42 is spaced therebetween; the two adjacent stacks 4 are electrically connected to the conductive layers 41 of the two electrodes 2 and 3, respectively. As shown in the fourth embodiment of the seventh figure, the chip-type filter element is provided with 12 1239674 equivalent circuit diagrams for four filters. When the first conductive layer 12 and the second conductive layer 14 are coated in accordance with four The first solid pattern and the second solid pattern are in a single component package, thereby forming four filters in the chip-type filter element, and simultaneously integrating into a multi-line type (Array Type) to solve practical applications The system uses space; as shown in the seventh figure, it can be applied to the filtering applications of four different output inputs a, b, c, and d at the same time. It can be known from the foregoing that the wafer type wave element of the present invention has the following advantages: 1. The solid pattern coated and overlapped according to different requirements can omit the thin line production that requires high accuracy, not only avoiding the additional development of new equipment, It can still save production costs, and can be produced with existing equipment and processes, speed up the introduction process and improve production efficiency. 2. Through the design of elements such as the interlayer with different dielectric coefficients between the two conductive layers, the thickness of the interlayer 13, the overlap area of the first solid pattern and the second solid pattern, the shape of the overlap area, etc., Choose to produce according to the specific frequency band of different needs, in order to respond to different specifications of wireless communication systems. However, the above description is only a preferred and feasible embodiment of the present invention, and therefore does not limit the patent scope of the present invention. Therefore, any equivalent structural changes made by applying the description or the schematic content of the present invention are included in the same reason Within the scope of the invention, in order to protect the rights and interests of the inventor, hereby. [Schematic description] The first diagram is a schematic diagram of an equivalent circuit of a conventional low-pass filter element. The first diagram A is a characteristic waveform diagram of the conventional low-pass filter element. 13! 239674 The second diagram The second picture A, the second picture B, the third picture, the third picture A, the fourth picture, the fifth picture, the sixth picture, and the seventh picture are for another conventional low-pass filter element. The schematic diagram is the characteristic wave opening of the conventional low-pass filter element. 3. It is the structural diagram of the conventional low-pass filter element. It is the equivalent circuit diagram of the wafer-type filter 'wave element of the present invention. ; Not thinking is the characteristic waveform diagram of the wafer-type filter element of the present invention · It is a schematic diagram of the structure of the first embodiment of the wafer-type filter element of the present invention; It is not intended to be the structure of the second embodiment of the wafer-type filter element of the present invention ; Is a schematic structural diagram of a third embodiment of the wafer filter element of the present invention; and is an equivalent circuit schematic of the fourth embodiment of the wafer filter element of the present invention. ^ Explanation of the symbols of the main components] First knowledge Inductance Second knowledge 10 Capacitance 11 Interlayer 10b, 10, b 3b inductive element Cross-type conductive layer lib 4b capacitive element 14 1239674 of the present invention 1 Terminal electrode first substrate 11 Interlayer in first conductive layer 13 Second conductive layer Second substrate 15 Inductive element Capacitive element 31 Laminated conductive layer 41 Interlayer specific frequency band f R Center frequency