CN1815694A - Semiconductor processing process - Google Patents
Semiconductor processing process Download PDFInfo
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- CN1815694A CN1815694A CN 200510005975 CN200510005975A CN1815694A CN 1815694 A CN1815694 A CN 1815694A CN 200510005975 CN200510005975 CN 200510005975 CN 200510005975 A CN200510005975 A CN 200510005975A CN 1815694 A CN1815694 A CN 1815694A
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Abstract
The semiconductor processing procedure is in use for grinding, cutting semiconductor and expanding to subsequent encapsulation procedure for adhering semiconductor on carrier, stacking semiconductor etc. after grinding, cutting procedures. Photic material is pasted on electrical connection surface of the semiconductor. Non-electrical connection surface is ground. Cutting procedure is carried out through the photic material toward to the semiconductor in order to obtain smaller crystal grains. The easy operation can reduce defective rate. In subsequent procedures said above, the photic material is adhered to crystal grains to protect them. The photic material and adhesive bonding martial can be removed from crystal grains easily since these materials will lose their stickiness after receiving light beam.
Description
Invention field
This case is the processing procedure of relevant semiconductor grinding, cutting, especially relevant semiconductor grinding, cutting and the follow-up attached processing procedure that is affixed on encapsulation such as carrier, semiconductor stack of semiconductor, more particularly relevant grinding wafer, cutting and gained crystal grain is attached to be affixed on the processing procedure of encapsulation such as carrier, gained crystal grain pile up.
Background technology
Compactization of element is the trend of the relevant industry of IC semiconductor, and for example United States Patent (USP) 5,793, and 108 is disclosed, pile up the polycrystalline sheet under known encapsulation architecture, must be with the wafer wear down to 2-4mils.
Known processing procedure with the wafer wear down, disclosed as United States Patent (USP) 6527627,6159071 etc., its typical step is shown in Fig. 1 a-1f.Among Fig. 1 a, at the front 2 (surface) of wafer 1 Continuous pressing device for stereo-pattern 3 with weld pad 6, so that the back side 4 to wafer 1, grind (shown in Fig. 1 b) with milling tool 30, must approach wafer 11 (shown in Fig. 1 c) after the grinding, with wafer cutting will with framework 5 be pasted on the back side 14 (shown in Fig. 1 d) of thin wafer 11, will approach the adhesive tape 3 that the front 2 of wafer 11 glue again and remove (shown in Fig. 1 e), so that cut (shown in Fig. 1 f) with cutting tool 40 execution wafers.
Adopt above-mentioned processing procedure, thin wafer 11 stress after the grinding are residual and warpage (as shown in Figure 2) often takes place, and easily cause the difficulty of subsequent job, and easily cause wafer to break.Wafer 11 after the thinning is cutting into wafer or crystal grain 21 backs (as shown in Figure 3) in addition, because of too thin, so move at wafer 21 and to be loaded on substrate 7 processing procedure of (as shown in Figure 4) (Die Bond), what wafer 21 took place in the operation of picking up (pick up) (picking up wafer 21 with pick-up head [pick-up head] 50 as shown in Figure 3) easily breaks 8, even (as shown in Figure 4), wafer also can take place when wafer 21 is positioned over substrate 7 breaks 8.
Easily cause the bad problem of quality for solving wafer thinning, United States Patent (USP) 6264535 discloses a kind of technology (shown in Fig. 5 a-5e), it only cuts (with cutting tool 40) to depression 9 (not on earth) are arranged by the front 2 of wafer 1 with wafer 1 earlier, tape 3 in the front 2 of wafer then, grind (with milling tool 30) again from the back side 4 of wafer 1, obtain a collection of crystal grain of cutting apart 21 after the grinding, continue and paste with framework 12 at the back side 4 of crystal grain 21, the adhesive tape 3 with crystal grain front 2 removes at last.Though this processing procedure may reduce the wafer breakage problem that warpage caused of thinning wafer, its step complicated (for example Continuous pressing device for stereo-pattern repeatedly, framework or the like), and cost is higher; Moreover it is helpless to solve thin crystal grain (cutting apart the back gained) and in successive process damaged problem takes place easily.Now with reference to Japan Patent 2003059871, Japan Patent 2003059871 is also for solving similar problem, it is to the used adhesive tape of mill/cutting processing procedure, subsides are to add strong film, this booster action that adds strong film comes from-structural support layer, is to be made of a kind of heat-softened resin that possesses particular storage elasticity (storage elastictiy).As solution, perhaps can bring into play some effects with this kind reinforcement, but relate to the use of special material, cost and operation complexity raise.Now again with reference to Japan Patent 11265928, Japan Patent 11265928 is also for solving similar problem, and its front with wafer to be ground is attached to-surface of special flat board, this surperficial roughness is controlled in the particular range.This front with wafer is attached to the solution of special surface, promptly enables to bring into play effect to a certain degree, also may not help avoid a difficult problem and the fraction defective of known wafer thinning subsequent job.Have to supervise and do not exist as yet in desirable solution, so this case provides a kind of processing procedure, phase makes relevant industry exempt or reduce operations such as thinning (for example grinding), cutting to ill effect or quality fraction defective that semiconductor element produced, simultaneously also to the successive process of operations such as thinning, cutting, the effect of simplification is provided or falls the benefit of cost.
Summary of the invention
One of this case purpose is, exempts or reduce the ill effect of thinning operation (for example grinding) to the semiconductor element quality.
Two of this case purpose is, exempts or reduce the ill effect of cutting operation to the semiconductor element quality.
Three of this case purpose is, to the successive process of semiconductor element cutting operation, for example DieBond (crystal grain is secured to substrate), crystal grain pile up or the like packaging operation, exempt or reduce the fraction defective of semiconductor element.
Four of this case purpose is, to the successive process of semiconductor element cutting operation, the effect of simplification is provided or falls the benefit of cost.
A kind of semiconductor processing process of this case, be applied to semiconductor, this semiconductor comprises semiconductor and is electrically connected non-electric-connecting of face and semiconductor, non-electric-connecting this semi-conductive original thickness of distance definition of this semiconductor to this semi-conductor electricity joint face, it is characterized in that this semiconductor processing process comprises:
A kind of transmission substance is affixed on this semi-conductor electricity joint face;
Grind this semiconductor from non-electric-connecting of this semiconductor, obtain non-electric-connecting of a new semiconductor, non-electric-connecting distance that arrives this semi-conductor electricity joint face of this new semiconductor is less than this original thickness; And
Carry out a cutting operation and obtain at least one first crystal grain towards this semiconductor through this transmission substance, this first crystal grain comprises a crystal grain and is electrically connected non-electric-connecting of face and a crystal grain, the crystal grain electrical connection face of this first crystal grain is the some of this semi-conductor electricity joint face, non-electric-connecting of the crystal grain of this first crystal grain is the some of non-electric-connecting of this new semiconductor, and the crystal grain electrical connection face of this first crystal grain is with this transmission substance.
Wherein also comprise: grind before this semiconductor, place one to grind support platform, this non-electric-connecting exposure together with this transmission substance this semiconductor; And
Carry out before this cutting operation, place all cut branch to hold platform together with this transmission substance this semiconductor, this non-electric-connecting towards this cutting support platform, this transmission substance exposure.
Wherein this transmission substance is affixed on this semi-conductor electricity joint face, be to use a kind of adhesive substance between this transmission substance and this semi-conductor electricity joint face, this adhesive substance possesses a characteristic: lose the viscosity between itself and this semi-conductor electricity joint face in response to a kind of light.
Wherein also comprise:
By the printing opacity of this transmission substance, allow this kind light arrive this adhesive substance, the viscosity that this adhesive substance is electrically connected with the crystal grain of this first crystal grain between the face is lost; And
This transmission substance and this adhesive substance are moved apart this first crystal grain.
Wherein also comprise:
With this first crystal grain together with this transmission substance dislocation in a carrier, non-electric-connecting of the crystal grain of this first crystal grain is pasted this carrier;
By the printing opacity of this transmission substance, allow this kind light arrive this adhesive substance, the viscosity that this adhesive substance is electrically connected with the crystal grain of this first crystal grain between the face is lost; And
This transmission substance and this adhesive substance are moved apart this first crystal grain.
Wherein this adhesive substance comprises one first adhesive-layer, one second adhesive-layer and a thin layer, this first adhesive-layer contacts this transmission substance, this second adhesive-layer contacts this semi-conductor electricity joint face, this thin layer is between this first adhesive-layer and this second adhesive-layer, this thin layer and this first adhesive-layer possess a characteristic: allow this kind light penetration, this second adhesive-layer possesses a characteristic: lose viscosity in response to this kind light.
Wherein this kind light is ultraviolet ray.
Wherein this transmission substance comprises at least a among both such as glass, plastic cement.
Wherein this cutting operation comprises:
Through this transmission substance know the line of cut of this semi-conductor electricity joint face; And
According to this line of cut this transmission substance and this semiconductor are cut.
Wherein also comprise:
Obtain at least one second crystal grain by this cutting operation, this second crystal grain also comprises a crystal grain and is electrically connected non-electric-connecting of face and a crystal grain, the crystal grain electrical connection face of this second crystal grain is the some of this semi-conductor electricity joint face, non-electric-connecting of the crystal grain of this second crystal grain is the some of non-electric-connecting of this new semiconductor, and the crystal grain of this second crystal grain is electrically connected face also with this transmission substance;
Non-electric-connecting crystal grain electrical connection face of pasting this first crystal grain of the crystal grain of this second crystal grain formed piling up of two crystal grain;
By the printing opacity of this transmission substance, allow this kind light arrive this adhesive substance of this transmission substance and this second intergranule, the viscosity that this adhesive substance is electrically connected with the crystal grain of this second crystal grain between the face is lost; And
This transmission substance and this adhesive substance are moved apart this second crystal grain.
Wherein also comprise:
This first crystal grain is pasted before this carrier, waits at least a among both in non-electric-connecting of the crystal grain of an appointed part of this carrier and this first crystal grain, is coated with a kind of sticking outstanding agent.
Wherein should the agent of sticking work comprise at least a among the threes such as elargol, non-conductive glue, B-stage glue.
Wherein also comprise:
This second crystal grain is pasted before this first crystal grain, is electrically connected at least a among both such as face in the non-electric-connecting crystal grain with this first crystal grain of the crystal grain of this second crystal grain, is coated with a kind of sticking outstanding agent.
Wherein should the agent of sticking work comprise at least a among the threes such as elargol, non-conductive glue, B-stage glue.
Wherein also comprise:
One carrier is provided;
Wait at least a among both in non-electric-connecting of the crystal grain of an appointed part of this carrier and this first crystal grain, be coated with a kind of B-stage glue;
This first crystal grain is placed this carrier, and non-electric-connecting of the crystal grain of this first crystal grain connects this appointed part via this B-stage glue;
Carry out one and add hot work, allow this B-stage glue heat up and generation viscosity;
By the printing opacity of this transmission substance, allow a kind of light arrive this adhesive substance, the viscosity that this adhesive substance is electrically connected with the crystal grain of this first crystal grain between the face is lost; And
This transmission substance and this adhesive substance are moved apart this first crystal grain.
Wherein also comprise:
The boundary obtains at least one second crystal grain by this cutting operation, this second crystal grain also comprises a crystal grain and is electrically connected non-electric-connecting of face and a crystal grain, the crystal grain electrical connection face of this second crystal grain is the some of this semi-conductor electricity joint face, non-electric-connecting of the crystal grain of this second crystal grain is the some of non-electric-connecting of this new semiconductor, and the crystal grain electrical connection face of this second crystal grain posts this transmission substance;
Be electrically connected at least a among both such as face in non-electric-connecting crystal grain of the crystal grain of this second crystal grain, be coated with a kind of B-stage glue with this first crystal grain;
Carry out this and add before the hot work, the crystal grain that non-electric-connecting of the crystal grain of this second crystal grain is connected this first crystal grain via this B-stage glue is electrically connected face;
By the printing opacity of this transmission substance, allow a kind of light arrive this adhesive substance of this transmission substance and this second intergranule, the viscosity that this adhesive substance is electrically connected with the crystal grain of this second crystal grain between the face is lost; And
This transmission substance and this adhesive substance are moved apart this second crystal grain.
A kind of semiconductor processing process of the present invention, be applied to semiconductor, this semiconductor comprises semiconductor and is electrically connected non-electric-connecting of face and semiconductor, non-electric-connecting this semi-conductive original thickness of distance definition of this semiconductor to this semi-conductor electricity joint face, it is characterized in that this semiconductor processing process comprises:
A kind of transmission substance is affixed on this semi-conductor electricity joint face via a kind of adhesive substance;
Grind this semiconductor from non-electric-connecting of this semiconductor, obtain non-electric-connecting of a new semiconductor, non-electric-connecting distance that arrives this semi-conductor electricity joint face of this new semiconductor is less than this original thickness;
Non-electric-connecting of this new semiconductor, be coated with a kind of B-stage glue; And
Carry out a cutting operation and obtain at least one crystal grain towards this semiconductor through this transmission substance, this first crystal grain comprises a crystal grain and is electrically connected non-electric-connecting of face and a crystal grain, the crystal grain electrical connection face of this first crystal grain is the some of this semi-conductor electricity joint face, non-electric-connecting of the crystal grain of this first crystal grain is the some of non-electric-connecting of this new semiconductor, the crystal grain electrical connection face of this first crystal grain posts this transmission substance, and non-electric-connecting of the crystal grain of this first crystal grain has this kind B-stage glue; And
This first crystal grain is placed a carrier together with this transmission substance, and non-electric-connecting this kind of process of the crystal grain of this first crystal grain B-stage glue connects this carrier;
Carry out one and add hot work, allow this B-stage glue heat up and generation viscosity;
By the printing opacity of this transmission substance, allow a kind of light arrive this adhesive substance, the viscosity that this adhesive substance is electrically connected with the crystal grain of this first crystal grain between the face is lost; And
This transmission substance and this adhesive substance are moved apart this first crystal grain.
Wherein also comprise:
Obtain at least one second crystal grain by this cutting operation, this second crystal grain also comprises a crystal grain and is electrically connected non-electric-connecting of face and a crystal grain, the crystal grain electrical connection face of this second crystal grain is another part of this semi-conductor electricity joint face, non-electric-connecting of the crystal grain of this second crystal grain is another part of non-electric-connecting of this new semiconductor, the crystal grain of this second crystal grain is electrically connected face and also posts this transmission substance, and the non-electric-connecting face of the crystal grain of this second crystal grain is also with this B-stage glue;
Carry out this and add before the hot work, the crystal grain that this B-stage glue of non-electric-connecting process of the crystal grain of this second crystal grain is connected this first crystal grain is electrically connected face;
Allow a kind of light arrive this adhesive substance of this transmission substance and this second intergranule, the viscosity that this adhesive substance is electrically connected with the crystal grain of this second crystal grain between the face is lost; And
This transmission substance and this adhesive substance are moved apart this second crystal grain.
A kind of semiconductor processing process of the present invention, be applied to semiconductor, this semiconductor comprises semiconductor and is electrically connected non-electric-connecting of face and semiconductor, non-electric-connecting this semi-conductive original thickness of distance definition of this semiconductor to this semi-conductor electricity joint face, it is characterized in that this semiconductor processing process comprises:
A kind of transmission substance is affixed on this semi-conductor electricity joint face via a kind of adhesive substance;
Grind this semiconductor from non-electric-connecting of this semiconductor, obtain non-electric-connecting of a new semiconductor, non-electric-connecting distance that arrives this semi-conductor electricity joint face of this new semiconductor is less than this original thickness; And
, carry out a cutting operation and obtain at least one less semiconductor towards this semiconductor through the image that this transmission substance manifested according to this semiconductor, this less semiconductor is with the some of a part of and this adhesive substance of this transmission substance.
Wherein also comprise:
With this adhesive substance that a kind of this less semiconductor of light directive is had, make the viscosity forfeiture between this adhesive substance and this less semiconductor; And
This transmission substance and this adhesive substance are moved apart this less semiconductor.
Wherein this adhesive substance comprises an adhesive-layer, and this adhesive-layer possesses a characteristic: receive this kind light and make viscosity forfeiture between this adhesive substance and this less semiconductor.
Wherein this adhesive-layer is a kind of UV glue, and this kind light is ultraviolet ray.
Description of drawings
For further specifying concrete technology contents of the present invention, below in conjunction with embodiment and accompanying drawing describes in detail as after, wherein:
A kind of relevant preceding case of Fig. 1 a-1f explanation.
Some shortcomings of case before Fig. 2-4 explanation is relevant.
The another kind of relevant preceding case of Fig. 5 a-5e explanation.
One of Fig. 6 a-6h explanation this case semiconductor processing process is represented embodiment.
One of the subsequent job of Fig. 7 a-7c explanation this case Fig. 6 a-6h is represented embodiment.
What the crystal grain of Fig. 8 a-8c explanation this case semiconductor processing process piled up one represents embodiment.
Fig. 9 illustrates that one of adhesive substance 69 in this case semiconductor processing process represents embodiment.
Embodiment
Represent embodiment with reference to one of figure 6a-6h explanation this case semiconductor processing process, it is applied to semiconductor 60, this semiconductor 60 comprises semiconductor and is electrically connected face 61 and semiconductor non-electric-connecting 62, and an original thickness 63 is arranged, to the distance definition of this semi-conductor electricity joint face 61, the representative embodiment of this semiconductor processing process comprises this original thickness 63 by non-electric-connecting 62 of this semiconductor:
With a kind of transmission substance 64, for example glass, plastic cement etc. are affixed on this semi-conductor electricity joint face 61;
Grind (with milling tool 30) this semiconductor 60 from non-electric-connecting 62 of this semiconductor, obtain non-electric-connecting 65 of a new semiconductor, non-electric-connecting 65 distance 70 that arrives this semi-conductor electricity joint face 61 of this new semiconductor is less than this original thickness 63, these semiconductor 60 thinnings just, preferred version is, before grinding this semiconductor 60, this semiconductor 60 is placed in one grinds support platform (not being shown in figure); And
Carry out a cutting operation (with cutting tool 40) and obtain one first crystal grain 66 (or less semiconductor) or a plurality of crystal grain towards this semiconductor 60 through this transmission substance 64, this first crystal grain 66 comprises a crystal grain and is electrically connected face 67 and a crystal grain non-electric-connecting 68, it is the some of this semi-conductor electricity joint face 61 that the crystal grain of this first crystal grain 66 is electrically connected face 67, non-electric-connecting 68 of the crystal grain of this first crystal grain 66 is the some of non-electric-connecting 65 of this new semiconductor, the crystal grain of this first crystal grain 66 is electrically connected face 67 still with this transmission substance 64 (just crystal grain is electrically connected the some that face 67 still is pasted with transmission substance 64), preferred version is, before cutting this semiconductor 60, this semiconductor 60 is placed in all cut branch holds platform 73.
In the above-mentioned semiconductor processing process, this transmission substance 64 be affixed on this semi-conductor electricity joint face 61, be to use a kind of adhesive substance 69 between this transmission substance 64 and this semi-conductor electricity joint face 61, this adhesive substance 69 possesses a characteristic: lose the viscosity between itself and this semi-conductor electricity joint face 61 in response to a kind of light (for example ultraviolet ray).So, printing opacity by this transmission substance 64, allow this kind light arrive this adhesive substance 69, the viscosity that this adhesive substance 69 is electrically connected with the crystal grain of this first crystal grain 66 between the face 67 is lost, and just can easily this transmission substance 64 be moved apart this first crystal grain 66 with this adhesive substance 69.For example shown in Fig. 6 g, with a pick-up head (pick-up head) 74, with this first crystal grain 66 together with these transmission substance 64 dislocations in a carrier 71 (shown in Fig. 6 h), non-electric-connecting 68 of the crystal grain of this first crystal grain 66 is pasted an appointed part (for example one of this carrier 71 surface 76 or part that should surface 76) of this carrier 71, printing opacity by this transmission substance 64, allow this kind light 72 arrive this adhesive substance 69, the viscosity that this adhesive substance 69 is electrically connected with the crystal grain of this first crystal grain 66 between the face 67 is lost, and just can conveniently this transmission substance 64 be moved apart this first crystal grain 66 with this adhesive substance 69.
This carrier 71 of the stickup that the crystal grain of above-mentioned first crystal grain 66 is non-electric-connecting 68, be to adopt a kind of sticking outstanding agent 75 (for example elargol, non-conductive glue, B-stage glue or the like), just: this first crystal grain 66 is pasted before this carrier 71, non-electric-connecting 68 of the crystal grain of the part of surface 76 (or should) and this first crystal grain 66 waits at least a among both in the surface 76 of this carrier 71, and coating should the agent 75 of sticking work.As if should the agent 75 of sticking work being a kind of B-stage glue, then must carry out one and add hot work, allow this B-stage glue heat up and generation viscosity.
Fig. 7 a-7c illustrates a plurality of crystal grain 66 of operation gained such as thinning cutting of Fig. 6 a-6h and pastes (with its non-electric-connecting 68 stickup) in carrier 71, and arrive adhesive substance 69 through transmission substance 64 with ultraviolet beam 77, the viscosity that this adhesive substance 69 is electrically connected with the crystal grain of this first crystal grain 66 between the face 67 is lost, and uses a pick-up head (pick-up head) 74 that this transmission substance 64 is moved apart this first crystal grain 66 with this adhesive substance 69 then.
Fig. 8 a illustrates crystal grain and piles up, the crystal grain that operation is won 66 such as thinning cutting of Fig. 6 a-6h are pasted on carrier 71, and the crystal grain that operation gained one second crystal grain 86 such as thinning cutting of Fig. 6 a-6h are pasted on this first crystal grain 66 is electrically connected face 67 (crystal grain of first crystal grain 66 is electrically connected the face 67 former transmission substances of having 64 and has removed with adhesive substance 69, shown in Fig. 7 b 66).This second crystal grain 86 also comprises a crystal grain and is electrically connected face 67 and a crystal grain non-electric-connecting 68, it also is the some of this semi-conductor electricity joint face 61 (shown in Fig. 6 a-6f) that the crystal grain of this second crystal grain 86 is electrically connected face 67, non-electric-connecting 68 of the crystal grain of this second crystal grain 86 is the some of this new semiconductor non-electric-connecting 65 (shown in Fig. 6 a-6f), and the crystal grain of this second crystal grain 86 is electrically connected the some that face 67 also has this transmission substance 64 (also shown in Fig. 6 a-6f).The crystal grain that is pasted on this first crystal grain 66 of above-mentioned second crystal grain 86 is electrically connected face 67, be to adopt a kind of sticking outstanding agent 85 (for example elargol, non-conductive glue, B-stage glue or the like), just: the crystal grain that this second crystal grain 86 is pasted on this first crystal grain 66 is electrically connected before the face 67, be electrically connected face 67 in non-electric-connecting 68 crystal grain with this first crystal grain 66 of the crystal grain of second crystal grain 86 and wait at least a among both, coating should the agent 85 of sticking work.If should the agent 85 of sticking work as the agent 75 of sticking work, also be a kind of B-stage glue, then must carry out one and add hot work, allow this B-stage glue heat up and produce viscosity, preferred version is: finish after all (a plurality of crystal grain) piles up in carrier 71, carry out this and add hot work.
After finishing the piling up of each crystal grain shown in Fig. 8 a, obtain shown in Fig. 8 b, then according to shown in Fig. 7 b, arrive adhesive substance 69 (attached work is electrically connected face 67 in the crystal grain of second crystal grain 86) with ultraviolet beam 77 through transmission substance 64, the viscosity that this adhesive substance 69 (attached work is electrically connected face 67 in the crystal grain of second crystal grain 86) is electrically connected with the crystal grain of this second crystal grain 86 between the face 67 is lost, shown in Fig. 8 c, this transmission substance 64 and this adhesive substance 69 are moved apart this second crystal grain 86 (being electrically connected face 67 from the crystal grain of this second crystal grain 86) then with a pick-up head (pick-up head) 74.
In the above-mentioned semiconductor processing process, also can be behind this semiconductor 60 of thinning (for example above-mentioned grinding), should glue work agent 75 (not being shown in figure) in non-electric-connecting 65 (being shown in Fig. 6 d) coating of this new semiconductor, so, each crystal grain that cutting operation obtains (first crystal grain 66 shown in Fig. 6 f for example, second crystal grain 86 or the like shown in Fig. 8 a) non-electric-connecting 68 of crystal grain all glues work agent 75 (not being shown in figure) with being somebody's turn to do, then according to Fig. 6 g, 6h, non-electric-connecting 68 of the crystal grain of first crystal grain 66 directly is affixed on carrier 71, also can contrast Fig. 8 a, the crystal grain that non-electric-connecting 68 of the crystal grain of second crystal grain 86 directly is affixed on this first crystal grain 66 is electrically connected face 67.The agent 75 of sticking work can be elargol, non-conductive glue, B-stage glue or the like, if the sticking outstanding agent of adopting 75 is a B-stage glue, then first crystal grain 66 is affixed on carrier 71, and second crystal grain 86 be affixed on this first crystal grain 66 after, need to carry out one and add hot work, allow this B-stage glue heat up and generation viscosity.
Above-mentioned this adhesive substance 69 one represent embodiment to be shown in Fig. 9.Adhesive substance 69 is a ultraviolet film (UV films) among Fig. 9, it comprises one first adhesive-layer 81, one second adhesive-layer 82, an and thin layer 83, these first adhesive-layer, 81 these transmission substances 64 of contact, this second adhesive-layer 82 these semi-conductor electricity joint faces of contact (electrical connection face 61 of semiconductor 60 for example, crystal grain 66, the electrical connection face 67 of crystal grain 86 etc.), this thin layer 83 is between this first adhesive-layer 81 and this second adhesive-layer 82, this thin layer 83 possesses a characteristic with this first adhesive-layer 81: allow ultraviolet beam penetrate, this second adhesive-layer 82 is a kind of UV glue (a UV glue), it possesses a characteristic: lose viscosity in response to ultraviolet beam, for example, this second adhesive-layer 82 receives a ultraviolet beam 92 and just loses viscosity, thus, if there is ultraviolet beam 92 to arrive this second adhesive-layer 82, this second adhesive-layer 82 is just lost viscosity, just make the viscosity forfeiture between this adhesive substance and this semi-conductor electricity joint face 67, this transmission substance 64 also just can be moved apart this semi-conductor electricity joint face easily with this adhesive substance 69, and (for example crystal grain 66, the electrical connection face 67 of crystal grain 86, or the electrical connection face 61 of semiconductor 60 etc.).The preferable approach that ultraviolet beam 92 arrives this second adhesive-layer 82 is, through this transmission substance 64, this first adhesive-layer 81, this thin layer 83 etc.
Claims (22)
1. semiconductor processing process, be applied to semiconductor, this semiconductor comprises semiconductor and is electrically connected non-electric-connecting of face and semiconductor, non-electric-connecting this semi-conductive original thickness of distance definition of this semiconductor to this semi-conductor electricity joint face, it is characterized in that this semiconductor processing process comprises:
A kind of transmission substance is affixed on this semi-conductor electricity joint face;
Grind this semiconductor from non-electric-connecting of this semiconductor, obtain non-electric-connecting of a new semiconductor, non-electric-connecting distance that arrives this semi-conductor electricity joint face of this new semiconductor is less than this original thickness; And
Carry out a cutting operation and obtain at least one first crystal grain towards this semiconductor through this transmission substance, this first crystal grain comprises a crystal grain and is electrically connected non-electric-connecting of face and a crystal grain, the crystal grain electrical connection face of this first crystal grain is the some of this semi-conductor electricity joint face, non-electric-connecting of the crystal grain of this first crystal grain is the some of non-electric-connecting of this new semiconductor, and the crystal grain electrical connection face of this first crystal grain is with this transmission substance.
2. semiconductor processing process according to claim 1 is characterized in that, wherein also comprises: grind before this semiconductor, place one to grind support platform, this non-electric-connecting exposure together with this transmission substance this semiconductor; And
Carry out before this cutting operation, place all cut branch to hold platform together with this transmission substance this semiconductor, this non-electric-connecting towards this cutting support platform, this transmission substance exposure.
3. semiconductor processing process according to claim 1, it is characterized in that, wherein this transmission substance is affixed on this semi-conductor electricity joint face, be to use a kind of adhesive substance between this transmission substance and this semi-conductor electricity joint face, this adhesive substance possesses a characteristic: lose the viscosity between itself and this semi-conductor electricity joint face in response to a kind of light.
4. semiconductor processing process according to claim 3 is characterized in that, wherein also comprises:
By the printing opacity of this transmission substance, allow this kind light arrive this adhesive substance, the viscosity that this adhesive substance is electrically connected with the crystal grain of this first crystal grain between the face is lost; And
This transmission substance and this adhesive substance are moved apart this first crystal grain.
5. semiconductor processing process according to claim 3 is characterized in that, wherein also comprises:
With this first crystal grain together with this transmission substance dislocation in a carrier, non-electric-connecting of the crystal grain of this first crystal grain is pasted this carrier;
By the printing opacity of this transmission substance, allow this kind light arrive this adhesive substance, the viscosity that this adhesive substance is electrically connected with the crystal grain of this first crystal grain between the face is lost; And
This transmission substance and this adhesive substance are moved apart this first crystal grain.
6. semiconductor processing process according to claim 3, it is characterized in that, wherein this adhesive substance comprises one first adhesive-layer, one second adhesive-layer and a thin layer, this first adhesive-layer contacts this transmission substance, this second adhesive-layer contacts this semi-conductor electricity joint face, this thin layer is between this first adhesive-layer and this second adhesive-layer, this thin layer and this first adhesive-layer possess a characteristic: allow this kind light penetration, this second adhesive-layer possesses a characteristic: lose viscosity in response to this kind light.
7. semiconductor processing process according to claim 3 is characterized in that, wherein this kind light is ultraviolet ray.
8. semiconductor processing process according to claim 1 is characterized in that, wherein this transmission substance comprises at least a among both such as glass, plastic cement.
9. semiconductor processing process according to claim 1 is characterized in that, wherein this cutting operation comprises:
Through this transmission substance know the line of cut of this semi-conductor electricity joint face; And
According to this line of cut this transmission substance and this semiconductor are cut.
10. semiconductor processing process according to claim 5 is characterized in that, wherein also comprises:
Obtain at least one second crystal grain by this cutting operation, this second crystal grain also comprises a crystal grain and is electrically connected non-electric-connecting of face and a crystal grain, the crystal grain electrical connection face of this second crystal grain is the some of this semi-conductor electricity joint face, non-electric-connecting of the crystal grain of this second crystal grain is the some of non-electric-connecting of this new semiconductor, and the crystal grain of this second crystal grain is electrically connected face also with this transmission substance;
Non-electric-connecting crystal grain electrical connection face of pasting this first crystal grain of the crystal grain of this second crystal grain formed piling up of two crystal grain;
By the printing opacity of this transmission substance, allow this kind light arrive this adhesive substance of this transmission substance and this second intergranule, the viscosity that this adhesive substance is electrically connected with the crystal grain of this second crystal grain between the face is lost; And
This transmission substance and this adhesive substance are moved apart this second crystal grain.
11. semiconductor processing process according to claim 5 is characterized in that, wherein also comprises:
This first crystal grain is pasted before this carrier, waits at least a among both in non-electric-connecting of the crystal grain of an appointed part of this carrier and this first crystal grain, is coated with a kind of sticking outstanding agent.
12. semiconductor processing process according to claim 11 is characterized in that, wherein should the agent of sticking work comprises at least a among the threes such as elargol, non-conductive glue, B-stage glue.
13. semiconductor processing process according to claim 10 is characterized in that, wherein also comprises:
This second crystal grain is pasted before this first crystal grain, is electrically connected at least a among both such as face in the non-electric-connecting crystal grain with this first crystal grain of the crystal grain of this second crystal grain, is coated with a kind of sticking outstanding agent.
14. semiconductor processing process according to claim 13 is characterized in that, wherein should the agent of sticking work comprises at least a among the threes such as elargol, non-conductive glue, B-stage glue.
15. semiconductor processing process according to claim 3 is characterized in that, wherein also comprises:
One carrier is provided;
Wait at least a among both in non-electric-connecting of the crystal grain of an appointed part of this carrier and this first crystal grain, be coated with a kind of B-stage glue;
This first crystal grain is placed this carrier, and non-electric-connecting of the crystal grain of this first crystal grain connects this appointed part via this B-stage glue;
Carry out one and add hot work, allow this B-stage glue heat up and generation viscosity;
By the printing opacity of this transmission substance, allow a kind of light arrive this adhesive substance, the viscosity that this adhesive substance is electrically connected with the crystal grain of this first crystal grain between the face is lost; And
This transmission substance and this adhesive substance are moved apart this first crystal grain.
16. semiconductor processing process according to claim 15 is characterized in that, wherein also comprises:
The boundary obtains at least one second crystal grain by this cutting operation, this second crystal grain also comprises a crystal grain and is electrically connected non-electric-connecting of face and a crystal grain, the crystal grain electrical connection face of this second crystal grain is the some of this semi-conductor electricity joint face, non-electric-connecting of the crystal grain of this second crystal grain is the some of non-electric-connecting of this new semiconductor, and the crystal grain electrical connection face of this second crystal grain posts this transmission substance;
Be electrically connected at least a among both such as face in non-electric-connecting crystal grain of the crystal grain of this second crystal grain, be coated with a kind of B-stage glue with this first crystal grain;
Carry out this and add before the hot work, the crystal grain that non-electric-connecting of the crystal grain of this second crystal grain is connected this first crystal grain via this B-stage glue is electrically connected face;
By the printing opacity of this transmission substance, allow a kind of light arrive this adhesive substance of this transmission substance and this second intergranule, the viscosity that this adhesive substance is electrically connected with the crystal grain of this second crystal grain between the face is lost; And
This transmission substance and this adhesive substance are moved apart this second crystal grain.
17. semiconductor processing process, be applied to semiconductor, this semiconductor comprises semiconductor and is electrically connected non-electric-connecting of face and semiconductor, non-electric-connecting this semi-conductive original thickness of distance definition of this semiconductor to this semi-conductor electricity joint face, it is characterized in that this semiconductor processing process comprises:
A kind of transmission substance is affixed on this semi-conductor electricity joint face via a kind of adhesive substance;
Grind this semiconductor from non-electric-connecting of this semiconductor, obtain non-electric-connecting of a new semiconductor, non-electric-connecting distance that arrives this semi-conductor electricity joint face of this new semiconductor is less than this original thickness;
Non-electric-connecting of this new semiconductor, be coated with a kind of B-stage glue; And
Carry out a cutting operation and obtain at least one crystal grain towards this semiconductor through this transmission substance, this first crystal grain comprises a crystal grain and is electrically connected non-electric-connecting of face and a crystal grain, the crystal grain electrical connection face of this first crystal grain is the some of this semi-conductor electricity joint face, non-electric-connecting of the crystal grain of this first crystal grain is the some of non-electric-connecting of this new semiconductor, the crystal grain electrical connection face of this first crystal grain posts this transmission substance, and non-electric-connecting of the crystal grain of this first crystal grain has this kind B-stage glue; And
This first crystal grain is placed a carrier together with this transmission substance, and non-electric-connecting this kind of process of the crystal grain of this first crystal grain B-stage glue connects this carrier;
Carry out one and add hot work, allow this B-stage glue heat up and generation viscosity;
By the printing opacity of this transmission substance, allow a kind of light arrive this adhesive substance, the viscosity that this adhesive substance is electrically connected with the crystal grain of this first crystal grain between the face is lost; And
This transmission substance and this adhesive substance are moved apart this first crystal grain.
18. semiconductor processing process according to claim 17 is characterized in that, wherein also comprises:
Obtain at least one second crystal grain by this cutting operation, this second crystal grain also comprises a crystal grain and is electrically connected non-electric-connecting of face and a crystal grain, the crystal grain electrical connection face of this second crystal grain is another part of this semi-conductor electricity joint face, non-electric-connecting of the crystal grain of this second crystal grain is another part of non-electric-connecting of this new semiconductor, the crystal grain of this second crystal grain is electrically connected face and also posts this transmission substance, and the non-electric-connecting face of the crystal grain of this second crystal grain is also with this B-stage glue;
Carry out this and add before the hot work, the crystal grain that this B-stage glue of non-electric-connecting process of the crystal grain of this second crystal grain is connected this first crystal grain is electrically connected face;
Allow a kind of light arrive this adhesive substance of this transmission substance and this second intergranule, the viscosity that this adhesive substance is electrically connected with the crystal grain of this second crystal grain between the face is lost; And
This transmission substance and this adhesive substance are moved apart this second crystal grain.
19. semiconductor processing process, be applied to semiconductor, this semiconductor comprises semiconductor and is electrically connected non-electric-connecting of face and semiconductor, non-electric-connecting this semi-conductive original thickness of distance definition of this semiconductor to this semi-conductor electricity joint face, it is characterized in that this semiconductor processing process comprises:
A kind of transmission substance is affixed on this semi-conductor electricity joint face via a kind of adhesive substance;
Grind this semiconductor from non-electric-connecting of this semiconductor, obtain non-electric-connecting of a new semiconductor, non-electric-connecting distance that arrives this semi-conductor electricity joint face of this new semiconductor is less than this original thickness; And
, carry out a cutting operation and obtain at least one less semiconductor towards this semiconductor through the image that this transmission substance manifested according to this semiconductor, this less semiconductor is with the some of a part of and this adhesive substance of this transmission substance.
20. semiconductor processing process according to claim 19 is characterized in that, wherein also comprises:
With this adhesive substance that a kind of this less semiconductor of light directive is had, make the viscosity forfeiture between this adhesive substance and this less semiconductor; And
This transmission substance and this adhesive substance are moved apart this less semiconductor.
21. semiconductor processing process according to claim 20 is characterized in that, wherein this adhesive substance comprises an adhesive-layer, and this adhesive-layer possesses a characteristic: receive this kind light and make viscosity forfeiture between this adhesive substance and this less semiconductor.
22. semiconductor processing process according to claim 21 is characterized in that, wherein this adhesive-layer is a kind of UV glue, and this kind light is ultraviolet ray.
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| CNB2005100059754A CN100383929C (en) | 2005-02-01 | 2005-02-01 | Semiconductor processing process |
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| CNB2005100059754A CN100383929C (en) | 2005-02-01 | 2005-02-01 | Semiconductor processing process |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105500137A (en) * | 2014-10-14 | 2016-04-20 | 株式会社迪思科 | Grinding apparatus |
| CN112635412A (en) * | 2020-12-21 | 2021-04-09 | 苏州日月新半导体有限公司 | Semiconductor structure and method for manufacturing semiconductor structure |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW494449B (en) * | 2001-02-06 | 2002-07-11 | United Microelectronics Corp | Method for fabricating test piece of transmission electron microscope |
| FR2823012B1 (en) * | 2001-04-03 | 2004-05-21 | Commissariat Energie Atomique | METHOD FOR SELECTIVELY TRANSFERRING AT LEAST ONE ELEMENT OF AN INITIAL MEDIUM ON A FINAL MEDIUM |
| JP2003147300A (en) * | 2001-11-12 | 2003-05-21 | Lintec Corp | Surface protecting sheet in grinding wafer rear and method for producing semiconductor chip |
| FR2837981B1 (en) * | 2002-03-28 | 2005-01-07 | Commissariat Energie Atomique | PROCESS FOR HANDLING SEMICONDUCTOR LAYERS FOR THEIR SLOWDOWN |
| JP4565804B2 (en) * | 2002-06-03 | 2010-10-20 | スリーエム イノベイティブ プロパティズ カンパニー | Laminate including ground substrate, method for producing the same, method for producing ultrathin substrate using laminate, and apparatus therefor |
| JP2004186281A (en) * | 2002-11-29 | 2004-07-02 | Sekisui Chem Co Ltd | Method of manufacturing ic chip |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105500137A (en) * | 2014-10-14 | 2016-04-20 | 株式会社迪思科 | Grinding apparatus |
| CN112635412A (en) * | 2020-12-21 | 2021-04-09 | 苏州日月新半导体有限公司 | Semiconductor structure and method for manufacturing semiconductor structure |
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| CN100383929C (en) | 2008-04-23 |
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