CN1808727A - Manufacturing method of laminar structure of solar battery, electrodes of solar battery, and solar battery - Google Patents
Manufacturing method of laminar structure of solar battery, electrodes of solar battery, and solar battery Download PDFInfo
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- CN1808727A CN1808727A CNA2005100046538A CN200510004653A CN1808727A CN 1808727 A CN1808727 A CN 1808727A CN A2005100046538 A CNA2005100046538 A CN A2005100046538A CN 200510004653 A CN200510004653 A CN 200510004653A CN 1808727 A CN1808727 A CN 1808727A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
This invention relates to one process method to improve solar battery photo electricity conversion efficiency with multiple micrometer nanometer space layer structures, which comprises the following steps: Providing one baseboard with multiple nanometer ball layers on surface and forming at least one silicon layer on the nanometer layer and baseboard surface and removing the nanometer layer and forming one layer structure with multiple micro holes. This invention solar battery comprises one baseboard, one layer structure on the baseboard surface with multiple holes, one surface transparent protective layer on the layer structure, at least front point connected to the layer structure and at least one back point connected to the baseboard.
Description
Technical field
The invention relates to a kind of manufacture method, solar cel electrode and solar cell of layer structure of solar cell, refer to especially a kind ofly form one and have the layer structure in a plurality of sub-micron grades cavity and can promote the manufacture method of the photoelectric conversion efficiency of solar cell.
Background technology
Because the human at present main various energy sourceses that rely on, as uranium, natural gas and oil etc., all can use totally in decades to come in, scientist drops into a large amount of mental and physical efforts and money invariably in the application of exploitation alternative energy source, as solar energy, wind-force, wave power and underground heat, and all obtain good achievement.
But it is restricted that the utilization of wind-force, wave power and underground heat all has its region, must just can use at some environment, and as volcanic region or seashore limit, and its employed equipment is huge, as the water intaking pipeline of windmill and deep sea water.Therefore, the whole family of section is consistent has an optimistic view of the application of solar energy and drops into the relevant conversion equipment of a large amount of mental and physical efforts development, i.e. solar cell.
Each research unit utilizes various materials and utilizes various technologies to manufacture solar cell in the world at present, and the photoelectric conversion efficiency of resulting solar cell and being not quite similar.In addition, the material of solar cell can be divided into monocrystalline silicon, polysilicon, amorphous silicon; Three or five families comprise GaAs, indium phosphide, InGaP: two or six families comprise cadmium telluride, copper indium diselenide etc.And the highest photoelectric conversion efficiency is respectively: monocrystalline silicon 24.7%, polysilicon 19.8%, amorphous silicon 14.5%, arsenic record 25.7%, selenizing gallium indium 18.8%.Generally speaking, the photoelectric conversion efficiency of the solar cell of laboratory stage can reach more than 30%, but the solar cell in the volume production stage of being sold on the market, and its photoelectric conversion efficiency generally is lower than 20%, the space that still makes progress.And consider down the dual of cost and photoelectric conversion efficiency, at present with the application of silicon metal more (comprising monocrystalline silicon and polysilicon), but in the application of some lower-orders, as solar energy computer or solar energy wrist-watch, then use the material of lower but the amorphous silicon that price is more cheap of photoelectric conversion efficiency as solar cell.
In addition because the overall price of solar cell is too high, and the silicon wafer cost to account for the total cost of solar cell over half.Therefore, scientist wants to improve the photoelectric conversion efficiency of solar cell and the technology of seeking effectively to reduce cost invariably with exhausting one's ability, to improve the practicality of solar cell.At present, scientist's method of improving the photoelectric conversion efficiency of solar cell provide light absorption area (as utilize silicon nanowires as with the material of incident photon reaction) or increase the quantity (as anti-reflecting layer is set) of incident photon.But the technology of silicon nanowires is numerous and diverse, and needs to use metal solvent to promote the growth of silicon nanowires.These metal solvents not only additionally increase cost, and for silicon nanowires, these metal solvents are impurity and can hinder the transmission of electronics in silicon nanowires, influence the photoelectric conversion efficiency of solar cell.In addition, anti-reflecting layer is set utilizes complicated light shield and etch process that the surface etching of silicon wafer is become the triangle taper, and utilize the evaporation mode in triangle taper surface coated anti-reflecting layer.Produce yield and these technologies all can increase the price of solar cell and reduce it, be unfavorable for producing to increase its occupation rate of market in a large number.
Therefore, industry is needed a kind of solar cell and manufacture method thereof with high light photoelectric transformation efficiency badly, with price that significantly reduces solar cell and the application scenario that substitutes more scripts use non-renewable energies, the consumption of saving non-renewable energy.
Summary of the invention
The object of the present invention is to provide a kind of manufacture method, solar cel electrode and solar cell of solar cell layer structure.
For achieving the above object, solar cell provided by the invention forms the method for the layer structure with a plurality of micropores hole, comprising:
(A) provide one to have the plural layer nanosphere layer substrate on surface thereon, wherein these nanosphere layers are piled up by a plurality of nanospheres and form;
(B) form at least one silicon layer in these nanosphere lamellar spacings and this substrate portion upper surface; And
(C) remove these nanospheres, form one and have the layer structure in a plurality of micropores hole in the upper surface of this substrate.
Described method, wherein these nanosphere layers of the formation of step (A) comprise in the method for this upper surface of base plate:
(A1) colloidal solution that provides this substrate and to be positioned at this container, and this colloidal solution has these nanospheres and an interface activating agent;
(A2) place this substrate in this container, and this colloidal solution covers to this upper surface of base plate of small part; And
(A3) add the volatile solution of a tool in this container, remove this interface activating agent and form these nanosphere layers in this upper surface of base plate.
Described method, wherein this method also comprises a step (B1) after step (B), with this substrate and this silicon layer annealing in process.
Described method, wherein the material of this substrate is monocrystalline silicon, polysilicon, amorphous silicon, GaAs, indium phosphide, InGaP or copper indium diselenide.
Described method, wherein the material of these nanospheres is a silica.
Described method, wherein this silicon layer is to utilize organometallic chemistry gas phase brilliant method of heap of stone to be formed at these nanosphere lamellar spacings and this substrate portion upper surface.
Described method, wherein this silicon layer is a monocrystalline silicon.
Described method, wherein these nanospheres are to utilize a hydric acid solution to remove.
Described method, wherein this method also comprises a step (D) after step (C), forms at least one thin layer in this layer structure surface.
Described method, wherein this thin layer is to be formed at this layer structure surface with vapour deposition method.
Described method, wherein this substrate is that the material of P type silicon substrate and this thin layer is a phosphorus.
Described method, wherein this substrate is that the material of N type silicon substrate and this thin layer is a magnesium.
Described method, wherein this method also comprises a step (E) after step (D), with this substrate, this silicon layer and this thin layer annealing in process.
The electrode of solar cell provided by the invention comprises:
One has the substrate of a upper surface; And
One stratiform structure, this layer structure are positioned at this upper surface and have a plurality of micropores hole.
Described electrode, wherein the material of this substrate is monocrystalline silicon, polysilicon, amorphous silicon, GaAs, indium phosphide, InGaP or copper indium diselenide.
Described electrode, wherein the material of this layer structure is a monocrystalline silicon.
Described electrode, wherein this substrate is that the material of P type silicon substrate and this layer structure is a GaAs.
Described electrode, wherein this substrate is that the material of N type silicon substrate and this layer structure is a cadmium selenide.
Solar cell provided by the invention cooperates an external circuit, comprising:
One substrate;
One stratiform structure is positioned at this substrate surface and has a plurality of micropores hole;
One protective clear layer is positioned at this layer structure surface;
At least one front contact is electrically connected on this layer structure; And
At least one back of the body contact is electrically connected on this substrate;
Wherein, close the loop for being electrically connected on this front contact and this back of the body contact outside this.
Described solar cell, wherein this solar cell comprises that also one is folded in the end protective layer between this substrate and this back of the body contact.
Described solar cell, wherein the material of this layer structure is a monocrystalline silicon.
Described solar cell, wherein this substrate is that the material of P type silicon substrate and this layer structure is a GaAs.
Described solar cell, wherein this substrate is that the material of N type silicon substrate and this layer structure is a cadmium selenide.
Hence one can see that, because solar cell of the present invention comprises that one has the layer structure in a plurality of micropores hole, make solar cell of the present invention significantly to increase, significantly promote the photoelectric conversion efficiency of solar cell of the present invention with the aitiogenic surface area of the photon of incident ray.In addition and since the photoelectric conversion efficiency of solar cell of the present invention originally known solar cell be height, and the anti-reflecting layer (ARC) that does not need to be provided with a complex process can improve the ratio that incident light enters solar cell.So solar cell of the present invention can utilize better simply explained hereafter, not only reduce production costs and price, more can produce in a large number, significantly promote the occupation rate of solar cell in energy market, reduce the dependence of human society for fossil energy.
Formation of the present invention has the method for the layer structure in a plurality of micropores hole, the nanosphere that wherein is positioned at upper surface of base plate can be made of any material, is preferably silica (SiOx), pottery, gets methyl methacrylate (PMMA), titanium oxide (TiOx) or polystyrene (PS).The method that formation of the present invention has the layer structure in a plurality of micropores hole can also comprise a step (B1) after step (B), with this substrate and this silicon layer annealing in process.And the temperature during this annealing in process is preferable between 700 ℃ to 900 ℃.The employed substrate of method that formation of the present invention has the layer structure in a plurality of micropores hole can be made of any material, is preferably P type silicon substrate or N type silicon substrate.The method that formation of the present invention has the layer structure in a plurality of micropores hole comprises that any proper method of utilization is formed at these nanosphere lamellar spacings substrate portion upper surface therewith with silicon layer, is preferably organometallic chemistry gas phase brilliant method of heap of stone or sputtering method.The formed silicon layer of method that formation of the present invention has the layer structure in a plurality of micropores hole can be made of the silicon of any lattice kind, is preferably monocrystalline silicon, polysilicon or amorphous silicon.Formation of the present invention has the method for the layer structure in a plurality of micropores hole and can use the solution of any kind of that a plurality of nanospheres are removed, and is preferably hydrofluoric acid, formic acid, butanone or toluene.The method that formation of the present invention has a layer structure in a plurality of micropores hole can also comprise after step (C) and a step (D) form the surface of at least one thin layer in this layer structure, and the method that forms this at least one thin layer is preferably evaporation or sputter.When the employed substrate of method that has a layer structure in a plurality of micropores hole when formation of the present invention was P type silicon substrate, the material of this thin layer was preferably boron, gallium, beryllium or magnesium.When the employed substrate of method that has a layer structure in a plurality of micropores hole when formation of the present invention was N type silicon substrate, the material of this thin layer was preferably phosphorus, arsenic, sulphur or oxygen.The method that formation of the present invention has the layer structure in a plurality of micropores hole can also comprise a step (E) after step (D), with this substrate, this silicon layer and this thin layer annealing in process.And the temperature during this annealing in process is preferable between 700 ℃ to 900 ℃.
Solar cell of the present invention can comprise also that one is folded in the end protective layer between substrate and the back of the body contact.The substrate of solar cel electrode of the present invention can be made of any material, is preferably P type silicon substrate or N type silicon substrate.The layer structure of solar cel electrode of the present invention can be made of the silicon of any lattice kind, is preferably monocrystalline silicon, polysilicon or amorphous silicon.When the substrate of solar cel electrode of the present invention was P type silicon substrate, the material of this layer structure was preferably n type material, and it is for sneaking into VA or VIA element.When the substrate of solar cel electrode of the present invention was N type silicon substrate, the material of this layer structure was preferably P-type material, and it is for sneaking into IIA or IIIA element.The layer structure of solar cell of the present invention can have the micropore hole of virtually any size, and its average diameter is preferable between 150nm to 450nm.
The layer structure of solar cell of the present invention can be made of the silicon of any lattice kind, is preferably monocrystalline silicon, polysilicon or amorphous silicon.When the substrate of solar cell of the present invention was P type silicon substrate, the material of this layer structure was preferably n type material, and it is for sneaking into VA or VIA element.When the substrate of solar cell of the present invention was N type silicon substrate, the material of this layer structure was preferably P-type material, and it is for sneaking into IIA or IIIA element.
Description of drawings
Fig. 1 a, Fig. 1 b are for forming the method schematic diagram of the substrate with plural layer nanosphere layer.
Fig. 2 is the method schematic diagram that the formation of a preferred embodiment of the present invention has the layer structure in a plurality of micropores hole.
Fig. 3 is the electrode schematic diagram of the solar cell of another preferred embodiment of the present invention.
Fig. 4 is the schematic diagram of the solar cell of the another preferred embodiment of the present invention.
Embodiment
Because a preferred embodiment of the present invention forms the method with a plurality of micropore layer shape structures and must use one and have plural layer nanosphere layer in its surperficial substrate, so that narration earlier forms the step of this kind substrate is then as follows:
See also Fig. 1, at first, provide a P type silicon substrate 11 and a colloid solution 12, this colloidal solution 12 has a plurality of nanosphere (not shown) and an interface activating agent.Now is positioned over P type silicon substrate 11 in the container 13 of colloidal solution 12, and P type silicon substrate 11 is immersed in the colloidal solution 12.After waiting to leave standstill several minutes, a plurality of nanospheres 14 are piled up in the surface of P type silicon substrate 11 gradually and are stacked into plural layer nanosphere layer automatically.The material of these nanospheres is silica (SiOx), and its average diameter is between between the 150nm to 450nm.But in different application scenarios, can also use the nanosphere of polymethyl methacrylate (PMMA), polystyrene (PS) or titanium oxide (TiOx) material, and its size is not limited in aforesaid scope, can changes its size according to actual needs.
Subsequently, will have volatile acetone soln 15 examples and go in the container 13, aforementioned colloidal solution 12 will be vapored away.Treat colloidal solution 12 volatilized clean after, again P type silicon substrate 11 is taken out from container 13, just obtain one and have plural layer nanosphere layer in its surperficial P type silicon substrate 11.
Again as shown in Figure 2, the formation of a preferred embodiment of the present invention has the method for the layer structure in a plurality of micropores hole and utilizes the organometallic chemistry gas phase to build brilliant method (MOCVD) again, simultaneously form a silicon layer 21 in the gap of aforesaid plural layer nanosphere layer and the part surface of P type silicon substrate 11, and the P type silicon substrate 11 that will have silicon layer 21 carries out annealing in process with 700 ℃ to 900 ℃, so that it is neat to constitute the crystal grain phase arrangement of silicon layer 21 monocrystalline silicon.After finishing annealing steps, P type silicon substrate 11 and position silicon layer 21 are thereon immersed in the hydrofluoric acid solution (not shown), remove the nanosphere 14 that is arranged in silicon layer 21 and form a plurality of micropore holes 22 that are arranged in silicon layer 21.Be noted that if use the nanosphere of unlike material, then remove the required solution of nanosphere and inequality, even the material of nanosphere is polymethyl methacrylate (PMMA), the solution that then uses is formic acid (formic acid); If the material of nanosphere is polystyrene (PS), the solution that then uses is butanone or toluene.
After a plurality of micropores of formation hole 22 is in silicon layer 21, utilize the mode of evaporation to form one deck gallium film 23 again at silicon layer 21 upper surfaces, and utilize the mode of annealing in process, the composition of gallium film 23 is diffused in the silicon layer 21, make silicon layer 21 change into to have the N type silicon layer in a plurality of micropores hole.
Fig. 3 is the electrode schematic diagram of the solar cell of another preferred embodiment of the present invention, and this electrode is to utilize the preceding method manufacturing.Wherein, substrate 31 is the indium oxide tin glass of light-permeable, and the layer structure 32 on substrate 31 surfaces has a plurality of average diameters between the micropore hole 321 between the 150nm to 450nm.But in addition, the material of substrate 31 also can be lighttight monocrystalline silicon.Moreover when the material of substrate 31 was P type silicon substrate, the material of layer structure 32 was a GaAs, and when the material of substrate 31 was N type silicon, the material of layer structure 32 was a cadmium selenide.
Fig. 4 is the schematic diagram of the solar cell of the another preferred embodiment of the present invention, and solar cell 40 cooperates an external circuit (not shown), is electric energy with transform light energy and exports another device (not shown) to.Solar cell 40 has the part of identical function (P type silicon substrate 41, the layer structure 42 and the micropore hole 421 that are made of n type single crystal silicon) except having with electrode shown in Figure 3, also have electrodes 44 before the protective clear layer 43, two that is positioned at layer structure 42 upper surfaces, be positioned at the end protective layer 45 and the back electrode 46 of P type silicon substrate 41 lower surfaces.Wherein, the material of protective clear layer 43 is a glass, and the material of end protective layer 45 is a silicon dioxide, and the material of preceding electrode 44 and back electrode 46 is silver and be electrically connected on layer structure 42 respectively and P type silicon substrate 41.
When real-world operation, enter the inside of solar cell 40 via protective clear layer 43 from the photon of extraneous incident ray.Photon is collision back and forth between the layer structure 42 of solar cell 40 and P type silicon substrate 41, makes layer structure 42 and P type silicon substrate 41 produce a plurality of electronics and a plurality of electric cave simultaneously, and it is right promptly all to form a plurality of electronics-electric cave.At this moment, move towards P type silicon substrate 41 in those electric caves that are positioned at the layer structure 42 that is made of n type single crystal silicon, and those electronics that are positioned at P type silicon substrate 41 then move towards the layer structure 42 that is made of n type single crystal silicon.Electronics that these move and electric cave enter (not shown) in the external circuit by preceding electrode 44 and back electrode 46 respectively, form an electric current.At this moment, just that the photon of incident ray is the entrained power conversion of solar cell 40 is an electric energy, finishes the program of opto-electronic conversion.
The foregoing description is only given an example for convenience of description, and the interest field that the present invention advocated should be as the criterion so that claim is described, but not only limits to the foregoing description.
Claims (23)
1. a formation has the method for the layer structure in a plurality of micropores hole, comprising:
(A) provide one to have the plural layer nanosphere layer substrate on surface thereon, wherein these nanosphere layers are piled up by a plurality of nanospheres and form;
(B) form at least one silicon layer in these nanosphere lamellar spacings and this substrate portion upper surface; And
(C) remove these nanospheres, form one and have the layer structure in a plurality of micropores hole in the upper surface of this substrate.
2. the method for claim 1 is characterized in that, wherein these nanosphere layers of the formation of step (A) comprise in the method for this upper surface of base plate:
(A1) colloidal solution that provides this substrate and to be positioned at this container, and this colloidal solution has these nanospheres and an interface activating agent;
(A2) place this substrate in this container, and this colloidal solution covers to this upper surface of base plate of small part; And
(A3) add the volatile solution of a tool in this container, remove this interface activating agent and form these nanosphere layers in this upper surface of base plate.
3. the method for claim 1 is characterized in that, wherein this method also comprises a step (B1) after step (B), with this substrate and this silicon layer annealing in process.
4. the method for claim 1 is characterized in that, wherein the material of this substrate is monocrystalline silicon, polysilicon, amorphous silicon, GaAs, indium phosphide, InGaP or copper indium diselenide.
5. the method for claim 1 is characterized in that, wherein the material of these nanospheres is a silica.
6. the method for claim 1 is characterized in that, wherein this silicon layer is to utilize organometallic chemistry gas phase brilliant method of heap of stone to be formed at these nanosphere lamellar spacings and this substrate portion upper surface.
7. the method for claim 1 is characterized in that, wherein this silicon layer is a monocrystalline silicon.
8. the method for claim 1 is characterized in that, wherein these nanospheres are to utilize a hydric acid solution to remove.
9. the method for claim 1 is characterized in that, wherein this method also comprises a step (D) after step (C), forms at least one thin layer in this layer structure surface.
10. method as claimed in claim 9 is characterized in that, wherein this thin layer is to be formed at this layer structure surface with vapour deposition method.
11. method as claimed in claim 9 is characterized in that, wherein this substrate is that the material of P type silicon substrate and this thin layer is a phosphorus.
12. method as claimed in claim 9 is characterized in that, wherein this substrate is that the material of N type silicon substrate and this thin layer is a magnesium.
13. method as claimed in claim 9 is characterized in that, wherein this method also comprises a step (E) after step (D), with this substrate, this silicon layer and this thin layer annealing in process.
14. the electrode of a solar cell comprises:
One has the substrate of a upper surface; And
One stratiform structure, this layer structure are positioned at this upper surface and have a plurality of micropores hole.
15. electrode as claimed in claim 14 is characterized in that, wherein the material of this substrate is monocrystalline silicon, polysilicon, amorphous silicon, GaAs, indium phosphide, InGaP or copper indium diselenide.
16. electrode as claimed in claim 14 is characterized in that, wherein the material of this layer structure is a monocrystalline silicon.
17. electrode as claimed in claim 14 is characterized in that, wherein this substrate is that the material of P type silicon substrate and this layer structure is a GaAs.
18. electrode as claimed in claim 14 is characterized in that, wherein this substrate is that the material of N type silicon substrate and this layer structure is a cadmium selenide.
19. a solar cell cooperates an external circuit, comprising:
One substrate;
One stratiform structure is positioned at this substrate surface and has a plurality of micropores hole;
One protective clear layer is positioned at this layer structure surface;
At least one front contact is electrically connected on this layer structure; And
At least one back of the body contact is electrically connected on this substrate;
Wherein, close the loop for being electrically connected on this front contact and this back of the body contact outside this.
20. solar cell as claimed in claim 19 is characterized in that, wherein this solar cell comprises that also one is folded in the end protective layer between this substrate and this back of the body contact.
21. solar cell as claimed in claim 19 is characterized in that, wherein the material of this layer structure is a monocrystalline silicon.
22. solar cell as claimed in claim 19 is characterized in that, wherein this substrate is that the material of P type silicon substrate and this layer structure is a GaAs.
23. solar cell as claimed in claim 19 is characterized in that, wherein this substrate is that the material of N type silicon substrate and this layer structure is a cadmium selenide.
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| CNB2005100046538A CN100424898C (en) | 2005-01-21 | 2005-01-21 | Manufacturing method of laminar structure of solar battery, electrodes of solar battery, and solar battery |
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| CNB2005100046538A CN100424898C (en) | 2005-01-21 | 2005-01-21 | Manufacturing method of laminar structure of solar battery, electrodes of solar battery, and solar battery |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7758826B2 (en) | 2004-05-13 | 2010-07-20 | Nissan Diesel Motor Co., Ltd. | Structure of reducing agent container |
| US8173528B2 (en) | 2008-10-24 | 2012-05-08 | Wuxi Suntech Power Co., Ltd. | Gallium-doped monocrystalline silicon solar cell and manufacture method for the same |
| TWI466816B (en) * | 2009-12-30 | 2015-01-01 | Univ Tunghai | Vertically oriented nanowires array structure and method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004115734A (en) * | 2002-09-27 | 2004-04-15 | Nitto Denko Corp | Particle-dispersed resin sheet, substrate for image displaying device and image displaying device |
| JP4430333B2 (en) * | 2003-05-13 | 2010-03-10 | シャープ株式会社 | Organic solar cell and manufacturing method thereof |
| US20050072461A1 (en) * | 2003-05-27 | 2005-04-07 | Frank Kuchinski | Pinhole porosity free insulating films on flexible metallic substrates for thin film applications |
-
2005
- 2005-01-21 CN CNB2005100046538A patent/CN100424898C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7758826B2 (en) | 2004-05-13 | 2010-07-20 | Nissan Diesel Motor Co., Ltd. | Structure of reducing agent container |
| US8173528B2 (en) | 2008-10-24 | 2012-05-08 | Wuxi Suntech Power Co., Ltd. | Gallium-doped monocrystalline silicon solar cell and manufacture method for the same |
| TWI466816B (en) * | 2009-12-30 | 2015-01-01 | Univ Tunghai | Vertically oriented nanowires array structure and method thereof |
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