CN1808191A - Color filter substrate and making method of substrate for liquid crystal display - Google Patents
Color filter substrate and making method of substrate for liquid crystal display Download PDFInfo
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- CN1808191A CN1808191A CN 200610008318 CN200610008318A CN1808191A CN 1808191 A CN1808191 A CN 1808191A CN 200610008318 CN200610008318 CN 200610008318 CN 200610008318 A CN200610008318 A CN 200610008318A CN 1808191 A CN1808191 A CN 1808191A
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- 238000000034 method Methods 0.000 title claims abstract description 56
- 239000000758 substrate Substances 0.000 title claims description 59
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 25
- 239000011159 matrix material Substances 0.000 claims abstract description 18
- 229920002120 photoresistant polymer Polymers 0.000 claims description 38
- 238000001259 photo etching Methods 0.000 claims description 22
- 238000005516 engineering process Methods 0.000 claims description 10
- 238000002834 transmittance Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 4
- 238000003384 imaging method Methods 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000004033 plastic Substances 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000000428 dust Substances 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 2
- 239000012780 transparent material Substances 0.000 claims 1
- 125000006850 spacer group Chemical group 0.000 abstract description 2
- 238000005530 etching Methods 0.000 abstract 3
- 239000003292 glue Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000010412 perfusion Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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- Optical Filters (AREA)
Abstract
Disclosed are a colorful light filter chip base board and a method for making the same which comprises steps of: providing a base board, forming black matrix on the base board and defining plural sub-pixel areas; forming colorful light filter chip with Red, Green and Blue on the sub-pixel areas, then forming transparent electrode layer on the black matrix and the colorful light filter chip; and forming a transparent light etching glue layer on the transparent layer, performing light etching on the transparent light etching glue layer and getting plural spacer and plural matched projection.
Description
Technical field
The present invention is relevant for a kind of LCD (multi-domain verticalalignment LCD of multiple block vertical orientation, hereinafter to be referred as MVA-LCD), be particularly to a kind of wall (spacers) and orientation projection of forming simultaneously in the method for colored filter substrate or array base palte, can reduce the cost of making MVA-LCD.
Background technology
LCD is the main flow of present flat-panel screens, and its principle is to utilize the dielectric anisotropy and the electric anisotropy of liquid crystal molecule, makes the ordered state conversion of liquid crystal molecule when extra electric field, causes liquid crystal film to produce various photoelectric effect.
The panel construction of LCD generally is formed by stacking by two plate bases, and defines distance between two plate bases with sept, and the perfusion of the space between two plate bases liquid crystal.Form counter electrode on two plate bases respectively, turning to and arranging in order to the control liquid crystal molecule.The panel of general Thin Film Transistor-LCD is made up of a slice thin-film transistor array base-plate and a slice colored filter substrate, isolates the gap that liquid crystal injects with sept between the two.
In the display product of giant-screen is used, in order to improve the quality of LCD, present technology comprises many quadrants vertical orientation technology (Multi-domain Vertical Alignment, MVA), for example: the PVA of Samsung (Patterned Vertical Alignment), the ASV (Advanced Super V liquid crystal) of Sharp exploitation, and transverse electric field drives (In-Plane Switching, IPS), for example: IPS of Hitachi (In-Plane Switching) and Super-IPS, two modes of hyundai electronics FFS (Fringe Field Switching) liquid crystal mode, and SFT (Super-fine TFT) technology of other OCB as Panasonic (Optical Compensated Birefringence) and NEC or the like, purpose all is to improve aperture opening ratio, improve parallax and visual angle, and improve the reaction velocity of liquid crystal simultaneously.Except wide viewing angle, MVA-LCD has more advantages such as high contrast, fast response time.The MVA-LCD element is at tft array substrate and colored filter (color filter, hereinafter to be referred as CF) definition orientation projection (protrusion) on the substrate, and the inclined design may command LCD alignment by the orientation projection is to form two kinds or four kinds of blocks, this alignment technique is called automatic block and forms (automatic domain formation is hereinafter to be referred as ADF) technology.The pattern of multiple orientation projection (as rib shape, zigzag and rhombus), disclosed with the shape (as triangle, semicircle, square) of multiple orientation projection, but the photoetching process that still need separate in manufacture process definition orientation projection and sept increase extra cost.
Please refer to the flow process of CF substrate of the existing making MVA-LCD of Figure 1A-Fig. 1 E.At first shown in Figure 1A, comprise substrate 100 is provided, black matrix" 105 is formed on the substrate 100, black-matrix layer 105 is defined pixel region 110 a plurality of times with the first road mask.Then shown in Figure 1B, form the colored filter 115 that comprises red (R), green (G), blue (B) respectively with the second road mask, the 3rd road mask, the 4th road mask and distinguish 110 in inferior pixel (sub-pixel).Then shown in Fig. 1 C, transparent electrode layer 120 is formed on black matrix" 105 and the colored filter 115.Then shown in Fig. 1 D, the photoresist material is formed on the transparent electrode layer 120, and defines sept (photospacer) 130 with the 5th road mask.Then shown in Fig. 1 E, another photoresist material is formed on the transparent electrode layer 120, and defines orientation projection 140 with the 6th road mask.
At last the array base palte subtend is arranged on this colored filter substrate 10, and in the space of two substrates, inserts liquid crystal, promptly finish the panel of MVA-LCD.
Existing as from the foregoing the colored filter substrate of making MVA-LCD needs six road masks altogether, comprises black matrix" together, CF (R, G, B) three roads, sept together, the orientation projection is together.How reducing processing step (as mask number, frequency of depositing) and then reduce production costs, is to need the problem that overcomes at present badly.
Summary of the invention
For solving above-mentioned prior art problems, the object of the present invention is to provide the method for making of a kind of colored filter substrate and base-board of liquid crystal display, simplify the technology of the colored filter substrate of MVA-LCD, reduce the manufacturing cost of MVA-LCD.
To achieve the above object of the invention, the invention provides a kind of sept and orientation projection of forming simultaneously in the method for colored filter substrate, mainly the making of sept with the orientation projection is incorporated in the same mask, this technology comprises provides substrate; Black matrix" is formed on the substrate; Black-matrix layer is defined pixel region a plurality of times; The colored filter that will comprise red (R), green (G), blue (B) is formed at time pixel region; Transparent electrode layer is formed on black matrix" and the colored filter; Form the transparent photomask glue-line on transparent electrode layer; And the transparent photomask glue-line is carried out a photoetching process to obtain a plurality of septs and a plurality of orientation projection simultaneously with a semi-transparency type mask.
The present invention also provides a kind of method for making of base-board of liquid crystal display of multiple block vertical orientation, comprising: array basal plate is provided; Form a photoresist layer on array base palte; And provide primary exposure-development process with the patterning photoresist layer, form a plurality of septs and orientation projection simultaneously.
Beneficial effect of the present invention is, reduces masking process one, and saves the time and the cost of deposition photoresist and photoetching process, can use the semi-transparency type photoresist with different transmittances to adjust the aspect ratio of sept and orientation projection.
Description of drawings
Figure 1A-Fig. 1 E is a series of cut-open views, shows that prior art formation sept and orientation projection are in the method for colored filter;
Fig. 2 A-Fig. 2 F is a series of cut-open views, shows in the preferred embodiment of the present invention to use positive photoetching rubber and semi-transparency type mask to form sept and orientation projection simultaneously in the method for colored filter;
Fig. 3 A-Fig. 3 B is a series of cut-open views, shows that the photoetching process of using negative photoresist and semi-transparency type mask in another preferred embodiment of the present invention is to form sept and orientation projection simultaneously in the method for colored filter.
Embodiment
In the first embodiment of the invention, shown in 2A figure, at first provide substrate 200, the composition of substrate attaches to the formed substrate of plastic base including but not limited to glass substrate, plastic base or glass substrate.Black matrix" 205 is formed on the substrate 200, and black matrix" 205 is defined a plurality of pixels (sub-pixel) district 210 with the first road mask, the chromatic filter layer that continues and make in order to separation, to increase color contrast, the material of black matrix" includes but not limited to black photosensitive resin or crome metal, the thickness of black photosensitive resin is approximately between the 1-2 micron, and the thickness of crome metal is approximately between the 1000-3000 dust.
Then shown in Fig. 2 B, the colored filter 215 that will comprise red (R), green (G), blue (B) with three road masks is formed at time pixel region 210.Utilize spin-coating method to form red pixel, by the mode of exposure imaging, form Red lightscreening plate at the predetermined inferior pixel region that forms red pixel, and remove the red pixel of all the other times pixel region again at inferior pixel region 210.Repeat this technology and just can get blue color filter, green color filter, and the thickness of colored filter is approximately between the 1-2.5 micron.Must be noted that the order that forms the optical filter color includes but not limited to said sequence.
Then shown in Fig. 2 C, transparent electrode layer 220 is formed on black matrix" 205 and the colored filter 215.The thickness of transparent electrode layer is about 500 to 2000 dusts, and its material includes but not limited to ITO, IZO or SnO.
Then shown in Fig. 2 D, form transparent positive photoresist layer 225 on transparent electrode layer 220.The method that forms transparent positive photoetching rubber is generally method of spin coating.
Then carry out committed step of the present invention, carry out photoetching process with 250 pairs of transparent positive photoresist layers 225 of semi-transparency type (halftone) mask, and semi-transparency type mask 250 comprises corresponding fate and the corresponding fate that forms sept of shadow zone 250c that forms the orientation projection of fate, semi-opaque region 250b that photic zone 250a correspondence is desired to remove.
Through behind the exposure imaging, form structure as Fig. 2 E, the photoresist of wherein corresponding photic zone 250a is removed fully; The photoresist of corresponding semi-opaque region 250b is partly removed, and forms orientation projection 225b; The photoresist of corresponding shadow zone 250c then keeps becomes sept 225a.The transmittance that shields the semi-transparent district of semi permeability mask when the shadow zone of semi-transparency type mask is about 0.9-0.5, and the aspect ratio of sept 225a and orientation projection 225b is about 10: 1-2: 1.Compare with prior art, the photoetching process of this committed step can obtain a plurality of sept 225a and a plurality of orientation projection 225b (height of orientation projection is about 1-1.5 micron, and width is about 6-12 micron) simultaneously, shown in Fig. 2 E.
Compare with six road masks of prior art, the present invention can lack one mask and save the time and the cost of deposition photoresist and photoetching process because the 5th road mask forms the orientation projection simultaneously.In addition, can use semi-transparency type photoresist to adjust the aspect ratio of sept and orientation projection with different transmittances.It should be noted that, the relative position of orientation projection 225a and sept 225b and shape only are used to illustrate among the figure, the configuration kenel that gets orientation projection and sept for the present invention is not limited to them, and those skilled in the art can do suitable adjustment according to actual needs.
Please refer to Fig. 2 F, as prior art array base palte 20 ' subtend is arranged on this colored filter substrate 20 at last, array base palte 20 ' comprises the thin film transistor (TFT) array that is formed on the substrate 295, though this figure only shows grid circuit 290.In addition, more be formed with dielectric layer 290 and transparency electrode 270 on the substrate 295.Transparency electrode 270 has slit 265, usually with colored filter substrate on orientation projection 225b be spaced, make the multiple quadrant homeotropic alignment of liquid crystal molecule 260 formation between two substrates.
And Fig. 3 A and Fig. 3 B show that the present invention uses another preferred embodiment of negative photoresist.The step of Fig. 3 A hookup 2A-Fig. 2 C wherein, for simplicity, similar elements will be continued to use identical symbol.
Then as shown in Figure 3A, form transparent negative photoresist layer 325 on transparent electrode layer 320, use method of spin coating to form transparent negative photoresist usually.
Then carry out photoetching process, and semi-transparency type mask 350 comprises the corresponding fate that forms this sept of a photic zone 350a with 350 pairs of transparent negative photoresist layers 325 of semi-transparency type mask; The corresponding fate that forms the orientation projection of one semi-opaque region 350b; An and shadow zone 350c correspondence fate of desiring to remove.
Through behind the exposure imaging, form structure as Fig. 3 B, the photoresist of wherein corresponding photic zone 350a keeps formation sept 325a; The photoresist of corresponding semi-opaque region 350b is partly removed, and forms orientation projection 325b; The photoresist of corresponding shadow zone 350c is then removed fully.
The transmittance that shields its semi-opaque region when semi-transparency type is about 0.1-0.5, and sept is about 10 with orientation bump height ratio: 1-2: 1.From the above, present embodiment uses negative photoresist also can obtain a plurality of sept 325a and a plurality of orientation projection 325b simultaneously.Compare with existing technology, except the described benefit of first embodiment, negative photoresist is generally cheap than positive photoetching rubber, compares with first embodiment and can save more costs.But positive photoetching rubber has preferable critical size, therefore can according to circumstances determine to use any photoresist.
At last as prior art the array base palte subtend is arranged on the colored filter substrate, and pour into liquid crystal in the space of two substrates, the panel of promptly finishing MVA-LCD is shown in Fig. 2 F.
Though the foregoing description forms orientation projection and sept simultaneously in the CF substrate-side, but the present invention is not restricted to this kind method, substrate also can be tft array substrate or COA (CF on array) substrate, those skilled in the art can according to circumstances need, and form orientation projection and sept simultaneously on a substrate with method of the present invention.
Beneficial effect of the present invention is, reduces masking process one, and saves the time and the cost of deposition photoresist and photoetching process, can use the semi-transparency type photoresist with different transmittances to adjust the aspect ratio of sept and orientation projection.
Above embodiment only is used to illustrate the present invention, is not to be used to limit protection scope of the present invention.
Claims (23)
1. one kind forms sept and orientation projection simultaneously in the method for colored filter substrate, it is characterized in that, comprising:
One substrate is provided;
Form a black matrix" on substrate, black-matrix layer is defined pixel region a plurality of times;
Form a plurality of colored filters at inferior pixel region;
Form a transparent electrode layer on black matrix" and colored filter;
Form a transparent photomask glue-line on transparent electrode layer; And
With a semi-transparency type mask transparent photomask glue-line is carried out a photoetching process to obtain a plurality of septs and a plurality of orientation projection simultaneously.
2. sept and the orientation projection of forming simultaneously as claimed in claim 1 is characterized in that in the method for colored filter substrate the material of black matrix" comprises crome metal or black photosensitive resin.
3. sept and the orientation projection of forming simultaneously as claimed in claim 2 is characterized in that in the method for colored filter substrate the thickness of black photosensitive resin is between the 1-2 micron, and the thickness of crome metal is between the 1000-3000 dust.
4. sept and the orientation projection of forming simultaneously as claimed in claim 1 is characterized in that in the method for colored filter substrate the thickness of colored filter is the 1-2.5 micron.
5. sept and the orientation projection of forming simultaneously as claimed in claim 1 is in the method for colored filter substrate, it is characterized in that, substrate consist of transparent material, substrate is that glass substrate, plastic base or glass substrate attach to the formed substrate of plastic base.
6. sept and the orientation projection of forming simultaneously as claimed in claim 1 is characterized in that in the method for colored filter substrate the material of transparent electrode layer comprises ITO, IZO or SnO.
7. sept and the orientation projection of forming simultaneously as claimed in claim 1 is characterized in that in the method for colored filter substrate the thickness of transparent electrode layer is about 500-2000 dust.
8. sept and the orientation projection of forming simultaneously as claimed in claim 1 is in the method for colored filter substrate, it is characterized in that, the transparent photomask glue-line is a positive photoetching rubber, and the semi-transparency type mask comprises the corresponding corresponding positive photoetching rubber that forms sept of a positive photoetching rubber and a shadow zone that forms the orientation projection of positive photoetching rubber, a semi-opaque region that a photic zone correspondence is desired to remove.
9. sept and the orientation projection of forming simultaneously as claimed in claim 8 is characterized in that in the method for colored filter substrate the transmittance of semi-opaque region is about 0.9-0.5.
10. sept and the orientation projection of forming simultaneously as claimed in claim 1 is characterized in that in the method for colored filter substrate the aspect ratio of sept and orientation projection is about 10: 1-2: 1.
11. sept and the orientation projection of forming simultaneously as claimed in claim 1 is in the method for colored filter substrate, it is characterized in that, the transparent photomask glue-line is a negative photoresist, and the semi-transparency type mask comprises the corresponding corresponding negative photoresist of orientation projection, the negative photoresist that a shadow zone correspondence is desired to remove of forming of negative photoresist, a semi-opaque region that forms sept of a photic zone.
12. sept and the orientation projection of forming simultaneously as claimed in claim 11 is characterized in that in the method for colored filter substrate the transmittance of semi-opaque region is about 0.1-0.5.
13. sept and the orientation projection of forming simultaneously as claimed in claim 1 is characterized in that in the method for colored filter substrate the height of orientation projection is about 1-1.5 micron, width is about 6-12 micron.
14. sept and the orientation projection of forming simultaneously as claimed in claim 1 is characterized in that in the method for colored filter substrate sept is formed on the black matrix".
15. the method for making of the base-board of liquid crystal display of a multiple block vertical orientation is characterized in that, comprising:
Array basal plate is provided;
Form a photoresist layer on array base palte; And
Provide primary exposure-development process with the patterning photoresist layer, form a plurality of septs and orientation projection simultaneously.
16. the method for making of the base-board of liquid crystal display of multiple block vertical orientation as claimed in claim 15 is characterized in that, substrate comprises TFT substrate or COA substrate.
17. the method for making of the base-board of liquid crystal display of multiple block vertical orientation as claimed in claim 15 is characterized in that, the mask that exposure imaging technology is used is the semi-transparency type mask.
18. the method for making of the base-board of liquid crystal display of multiple block vertical orientation as claimed in claim 17, it is characterized in that, photoresist layer is transparent positive photoetching rubber, and the semi-transparency type mask comprises: the positive photoetching rubber that a photic zone correspondence is desired to remove, the corresponding corresponding positive photoetching rubber that forms sept of a positive photoetching rubber and a shadow zone that forms the orientation projection of a semi-opaque region.
19. the method for making of the base-board of liquid crystal display of multiple block vertical orientation as claimed in claim 18 is characterized in that, the transmittance of semi-opaque region is about 0.9-0.5.
20. the method for making of the base-board of liquid crystal display of multiple block vertical orientation as claimed in claim 15 is characterized in that, the aspect ratio of sept and orientation projection is about 10: 1-2: 1.
21. the method for making of the base-board of liquid crystal display of multiple block vertical orientation as claimed in claim 17, it is characterized in that, photoresist layer is a transparent negative photoresist, and the semi-transparency type mask comprises: the corresponding corresponding negative photoresist of orientation projection, the negative photoresist that a shadow zone correspondence is desired to remove of forming of negative photoresist, a semi-opaque region that forms sept of a photic zone.
22. the method for making of the base-board of liquid crystal display of multiple block vertical orientation as claimed in claim 21 is characterized in that, the transmittance of semi-opaque region is about 0.1-0.5.
23. the method for making of the base-board of liquid crystal display of multiple block vertical orientation as claimed in claim 15 is characterized in that, the height of orientation projection is about 1-1.5 micron, and width is about 6-12 micron.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200610008318A CN100578267C (en) | 2006-02-17 | 2006-02-17 | Color filter substrate and making method of substrate for liquid crystal display |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200610008318A CN100578267C (en) | 2006-02-17 | 2006-02-17 | Color filter substrate and making method of substrate for liquid crystal display |
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| CN1808191A true CN1808191A (en) | 2006-07-26 |
| CN100578267C CN100578267C (en) | 2010-01-06 |
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Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN100397107C (en) * | 2006-09-13 | 2008-06-25 | 友达光电股份有限公司 | Method for fabricating color filter |
| US7894025B2 (en) | 2006-12-01 | 2011-02-22 | Au Optronics Corp. | Patterned color filter substrate and LCD utilizing the same |
| CN101226251B (en) * | 2007-01-18 | 2011-05-18 | 奇美电子股份有限公司 | Colorful light filtering substrate and manufacturing method thereof as well as LCD device |
| CN102269897A (en) * | 2010-06-02 | 2011-12-07 | 京东方科技集团股份有限公司 | Color film substrate and manufacturing method thereof, liquid crystal panel and liquid crystal display (LCD) |
| CN101598990B (en) * | 2009-06-11 | 2012-06-27 | 友达光电股份有限公司 | Touch panel and method for forming same |
| CN102981202A (en) * | 2012-12-07 | 2013-03-20 | 京东方科技集团股份有限公司 | Fabrication method of color filter |
| CN103019042A (en) * | 2012-11-29 | 2013-04-03 | 上海华力微电子有限公司 | Method for improving stability of alignment precision of high-transparency mask plate |
| CN103713392A (en) * | 2012-09-28 | 2014-04-09 | Nlt科技股份有限公司 | Space image forming element, method of manufacturing the same, display device, and terminal |
| CN104007621A (en) * | 2014-04-10 | 2014-08-27 | 友达光电股份有限公司 | Element substrate and method for manufacturing the same |
| CN105372867A (en) * | 2015-12-02 | 2016-03-02 | 深圳市华星光电技术有限公司 | Quantum dot color film substrate manufacturing method |
| CN105807473A (en) * | 2014-12-31 | 2016-07-27 | 上海仪电显示材料有限公司 | Method for preparing color filtering slice, color filtering slice and liquid crystal display panel |
| CN106249468A (en) * | 2016-11-01 | 2016-12-21 | 合肥鑫晟光电科技有限公司 | A kind of color membrane substrates and preparation method thereof, display floater and display device |
| CN106873252A (en) * | 2017-04-18 | 2017-06-20 | 深圳市华星光电技术有限公司 | Colored filter substrate and preparation method thereof |
| CN108761996A (en) * | 2018-04-27 | 2018-11-06 | 东旭（昆山）显示材料有限公司 | The manufacturing method of mask plate and its manufacturing method and colored filter |
| WO2019127674A1 (en) * | 2017-12-29 | 2019-07-04 | 深圳市华星光电半导体显示技术有限公司 | Method for fabricating black matrix and spacer |
| US10488699B2 (en) | 2017-12-29 | 2019-11-26 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Method for manufacturing black matrix and spacer |
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- 2006-02-17 CN CN200610008318A patent/CN100578267C/en not_active Expired - Fee Related
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN100397107C (en) * | 2006-09-13 | 2008-06-25 | 友达光电股份有限公司 | Method for fabricating color filter |
| US7894025B2 (en) | 2006-12-01 | 2011-02-22 | Au Optronics Corp. | Patterned color filter substrate and LCD utilizing the same |
| CN101226251B (en) * | 2007-01-18 | 2011-05-18 | 奇美电子股份有限公司 | Colorful light filtering substrate and manufacturing method thereof as well as LCD device |
| CN101598990B (en) * | 2009-06-11 | 2012-06-27 | 友达光电股份有限公司 | Touch panel and method for forming same |
| CN102269897A (en) * | 2010-06-02 | 2011-12-07 | 京东方科技集团股份有限公司 | Color film substrate and manufacturing method thereof, liquid crystal panel and liquid crystal display (LCD) |
| CN103713392A (en) * | 2012-09-28 | 2014-04-09 | Nlt科技股份有限公司 | Space image forming element, method of manufacturing the same, display device, and terminal |
| CN103019042B (en) * | 2012-11-29 | 2015-01-07 | 上海华力微电子有限公司 | Method for improving stability of alignment precision of high-transparency mask plate |
| CN103019042A (en) * | 2012-11-29 | 2013-04-03 | 上海华力微电子有限公司 | Method for improving stability of alignment precision of high-transparency mask plate |
| CN102981202B (en) * | 2012-12-07 | 2015-08-19 | 京东方科技集团股份有限公司 | A kind of method for making of colored filter |
| CN102981202A (en) * | 2012-12-07 | 2013-03-20 | 京东方科技集团股份有限公司 | Fabrication method of color filter |
| US9581906B2 (en) | 2014-04-10 | 2017-02-28 | Au Optronics Corporation | Device substrate and fabricating method thereof |
| CN104007621A (en) * | 2014-04-10 | 2014-08-27 | 友达光电股份有限公司 | Element substrate and method for manufacturing the same |
| CN105807473B (en) * | 2014-12-31 | 2019-06-28 | 上海仪电显示材料有限公司 | Production method, colour filter and the liquid crystal display panel of colour filter |
| CN105807473A (en) * | 2014-12-31 | 2016-07-27 | 上海仪电显示材料有限公司 | Method for preparing color filtering slice, color filtering slice and liquid crystal display panel |
| CN105372867A (en) * | 2015-12-02 | 2016-03-02 | 深圳市华星光电技术有限公司 | Quantum dot color film substrate manufacturing method |
| CN106249468A (en) * | 2016-11-01 | 2016-12-21 | 合肥鑫晟光电科技有限公司 | A kind of color membrane substrates and preparation method thereof, display floater and display device |
| CN106249468B (en) * | 2016-11-01 | 2023-04-18 | 合肥鑫晟光电科技有限公司 | Color film substrate, preparation method thereof, display panel and display device |
| CN106873252A (en) * | 2017-04-18 | 2017-06-20 | 深圳市华星光电技术有限公司 | Colored filter substrate and preparation method thereof |
| WO2019127674A1 (en) * | 2017-12-29 | 2019-07-04 | 深圳市华星光电半导体显示技术有限公司 | Method for fabricating black matrix and spacer |
| US10488699B2 (en) | 2017-12-29 | 2019-11-26 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Method for manufacturing black matrix and spacer |
| CN108761996A (en) * | 2018-04-27 | 2018-11-06 | 东旭（昆山）显示材料有限公司 | The manufacturing method of mask plate and its manufacturing method and colored filter |
| CN112859454A (en) * | 2021-02-26 | 2021-05-28 | Tcl华星光电技术有限公司 | Display panel, manufacturing method thereof and display device |
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