CN1807699A - Wafer electroplating apparatus for improving process uniformity - Google Patents

Wafer electroplating apparatus for improving process uniformity Download PDF

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Publication number
CN1807699A
CN1807699A CNA2005101362621A CN200510136262A CN1807699A CN 1807699 A CN1807699 A CN 1807699A CN A2005101362621 A CNA2005101362621 A CN A2005101362621A CN 200510136262 A CN200510136262 A CN 200510136262A CN 1807699 A CN1807699 A CN 1807699A
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CN
China
Prior art keywords
wafer
cathode
plating
plating apparatus
recited
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Pending
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CNA2005101362621A
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Chinese (zh)
Inventor
全昶宣
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication of CN1807699A publication Critical patent/CN1807699A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/06—Suspending or supporting devices for articles to be coated

Abstract

Disclosed is a wafer electroplating apparatus, which includes an electroplating bath comprising an anode in the electroplating bath, an electroplating solution, and a cathode located on the top of the electroplating bath and on to which a wafer is mounted. The cathode comprises a first portion electrically connected to an edge of the wafer, and a second portion extending from the first portion and electrically connected to a side of the wafer. The direct contact of the cathode with the side and front edges of the wafer ensures uniform distribution of the electrical field on the wafer during the electroplating process. Consequently, a uniform thickness of metal film deposition is achieved.

Description

Wafer electroplating apparatus for improving process uniformity
Technical Field
The present invention relates to a wafer plating apparatus, and more particularly, to a wafer plating apparatus for improving uniformity of metal film deposition of a wafer plating process and a method thereof.
Background
There are many electroplating methods for depositing metal films on wafers, such as chemical vapor deposition, physical vapor deposition, and electrochemical reactions. However, electroplating methods using electrochemical reactions are currently more popular because these methods provide better quality metal deposition on wafers than other techniques.
Fig. 1 shows a cross-sectional view of a conventional wafer plating apparatus. The wafer plating apparatus 10 includes: a plating tank 11 that accommodates a plating solution 14; an anode 13 located in a bottom portion of the plating tank 1 l; and an annular cathode 12 on which the wafer W is directly mounted. The power source is directly connected between and applied to the anode 13 and the cathode 12. In this conventional electroplating arrangement, a metal (e.g., copper) is electrochemically reduced and deposited as a film onto the wafer surface.
Fig. 2A shows a top view of a conventional planar ring-type cathode 12. This shape has a disadvantage because the very likely misalignment (misalignment) of the wafer W supported on the cathode results in insufficient contact of the wafer with the cathode, including contamination of possible impurities on the wafer. These conditions can lead to inefficient and inadequate metal film deposition on the wafer.
Similarly, in fig. 2B, locations α (the area on the wafer not in contact with the cathode) and β (the area on the wafer with less metal film deposition) appear as a result of the above.
These problems exist in the prior art, which result in irregularities in the deposition of metal films on the wafer.
Disclosure of Invention
In one embodiment of the present invention, a wafer electroplating apparatus is constructed in which electrodes are in direct contact with both the face and the front edge (front edge) of the wafer.
According to one embodiment of the present invention, a wafer plating apparatus comprises: an electroplating bath; electroplating solution; an anode positioned within the base portion of the plating cell; and a cathode mounted on the top of the plating bath, on which the wafer is placed. The cathode further includes: a first portion electrically connected to an edge of the wafer; and a second portion extending from the first portion and electrically connected to a side of the wafer.
In one embodiment of the invention, the second portion of the cathode is structurally matched to the side of the wafer.
In one embodiment of the invention, the second portion of the cathode is recessed to match the convex edge of the wafer (covex edge).
In an embodiment of the invention, the cathode further comprises a third portion for aligning the wafer, wherein the third portion extends from the second portion in the planar direction.
In one embodiment of the invention, the third portion of the cathode is inclined upwardly and outwardly toward the top edge of the plating bath.
In another embodiment of the invention, the cathode is annular and is electrically connected to the entire edge of the wafer. The cathode is preferably a conductive material.
According to still another embodiment of the present invention, a wafer plating apparatus includes: a plating tank containing a plating solution; an anode positioned within the base portion of the plating bath; and a cathode mounted on top of the plating bath, wherein the cathode is in direct contact with the wafer. Preferably, the cathode comprises: a planar portion in contact with a face of the wafer; arecess extending from the planar portion and configured to match the raised edge of the wafer; and an inclined portion extending from the recessed portion and inclined upwardly and outwardly toward a top edge of the plating tank.
In another embodiment of the present invention, a plating bath includes: an inlet through which the plating solution is supplied into the plating tank; and an outlet through which the used plating solution is discharged out of the plating tank.
In one embodiment of the invention, the cathode is any shape, but is most preferably structurally formed to contact both the side and the edge of the wafer; thus allowing for a uniform distribution of current across the wafer; thereby allowing for attraction of equivalent areas of metal deposition. As a result, the metal film deposited on the wafer is uniform in thickness.
Drawings
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate exemplary embodiments of the invention and together with the description serve to explain the principles of the invention. In the drawings:
FIG. 1 is a sectional view showing the structure of a conventional wafer plating apparatus;
fig. 2A and 2B are a top view and a cross-sectional view showing a conventional wafer plating apparatus;
FIG. 3 is a cross-sectional view showing a wafer plating apparatus according to an embodiment of the present invention;
FIG. 4 is a cross-sectional view further illustrating a wafer plating apparatus according to an embodiment of the present invention;
FIG. 5 is an enlarged cross-sectional view illustrating a cathode in a wafer plating apparatus according to an embodiment of the present invention; and
fig. 6 is a partially enlarged perspective sectional view illustrating a cathode in a wafer plating apparatus according to an embodiment of the present invention.
Detailed Description
Preferred embodiments of the present invention will be described below with reference to the accompanying drawings. This invention may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will fully convey the scope of the invention to those skilled in the art. Like reference numerals refer to like elements throughout the specification.
Fig. 3 is a sectional view showing a wafer plating apparatus according to an embodiment of the present invention. Fig. 3 shows a wafer plating apparatus 100. Fig. 3 shows the principle of electroplating by electrolysis in a wafer electroplating apparatus, in which metal ions are reduced to elemental metal and deposited as a film on a wafer. The wafer plating apparatus 100 includes: a plating tank 110 that contains a plating solution 140; an electrode 130 positioned within the plating bath 110; and an electrode 120 on which the wafer W is placed.
The plating solution 140 contained in the plating tank 110 is an electrolyte solution including an aqueous solution of a metal salt. For example, copper sulfate (CuSO)4) The aqueous solution may be used to plate a copper film on the surface of the wafer W.
In another embodiment of the present invention as shown in fig. 4, the plating bath 110 may further include an inlet 150 for supplyingan electrolyte and an outlet 160 for discharging a used electrolyte.
As shown in fig. 3, electrode 130 is located in the base portion of plating cell 110 and serves as an anode or positive electrode where electrochemical oxidation occurs. While electrode 120 acts as a cathode or negative electrode, located at the top of plating bath 110, where the reduction takes place.
Anode 130 is preferably a metal or similar material. As shown in fig. 3, the anode 130 is made of copper. Similarly, the cathode 120 is preferably made of a conductive material.
When current is applied, the current is carried by the movement of electrons from the anode 130 to the cathode 120 and by the movement of ions in the solution 140. The movement of positively charged cations in the solution in the direction towards the cathode 120 is electrically equivalent to the movement of negatively charged electrons in the opposite direction from the anode 130 to the cathode 120. Positively charged ions in solution 140 migrate to electrode 120 where they are reduced and deposited as elemental metal. As a result, a metal film is deposited on the surface of the charged wafer W because the wafer is placed directly on the cathode 120.
Meanwhile, at the electrode 130, as current passes, the metal, such as copper, in the anode 130 is oxidized into copper ions, releasing two electrons per copper atom. Ideally, the anode 130 loses mass and the cathode 120 gains equal mass as copper is transferred from the anode into the solution 140 and from the solution 140 to the cathode 120.
The cathode 120 may be of any shape; but preferably forms a ring pattern and is configured to support the circular wafer W while contacting the outer circumference (outer circle) of the wafer W. The direct contact of the cathode 120 with the wafer W ensures electrical conduction of the wafer W. Thecathode 120 may be formed of any metal; but the metal containing stainless steel (SUS) is most preferable. The wafer W is placed on the cathode 120 where the outer circumferential surface of the front face (front face) W1 (see fig. 5) thereof is located on the cathode 120; and the front side W1 is in direct contact with the cathode 120.
Fig. 5 is an enlarged sectional view illustrating a cathode in a wafer plating apparatus according to an embodiment of the present invention, and fig. 6 is a partially enlarged perspective sectional view illustrating the cathode in the wafer plating apparatus according to an embodiment of the present invention.
Referring to fig. 5 and 6, the cathode 120 is configured to include a planar portion 120a for contacting the planarized edge of the front face W1 of the wafer W, and a recessed portion (concave portion)120b for contacting the convex side face W2 of the wafer W. When power is applied to the electrodes, current flows uniformly through the front side W1 and through the side W2 of the wafer W. As a result, the application of current in side W2 ensures that the wafer is still charged even when the front side W1 has impurities. Thus, the metal film will still be deposited uniformly on the surface of the wafer.
In another embodiment of the present invention, the cathode 120 may be installed to have any elastic force (elastic force) uniformly distributed toward the wafer W; but most preferably maintains the elasticity of the aligned position of the wafer W with respect to the cathode 120.
Further, in another embodiment of the present invention, the cathode 120 includes an inclined portion 120c that is inclined upwardly and outwardly toward the top of the electrolytic cell 110. The inclined portion 120c enables the wafer W to be properly placed on and aligned with the cathode 120 for an efficient plating process.
In one embodiment of the invention, the cathode 120 acts as a negative electrode. In addition, the cathode 120 provides a uniform electrical conduction state of the wafer because the portion 120a is in direct contact with the side W1 and the inclined portion 120b is in direct contact with the edge W2. However, the shape of the cathode 120 can be modified according to the shape of the edge or side W2 of the wafer W.
The following description is the operation of the wafer plating apparatus 100 having the above-described elements. An illustrative example is shown in FIG. 4, where copper sulfate (CuSO)4) The aqueous solution is the electrolyte 140 for plating the copper film on the front side W1 of the wafer W.
The wafer W is placed on the cathode 120 and positioned so as to allow the edge of the front side W1 to be in direct contact with the cathode 120. In this support position, side or edge W2 is also allowed to directly contact cathode 120. Then, power is applied to the electrodes 120 and 130, resulting in the wafer W being electrically conductive.
In solution, copper sulfate is ionized into copper ions Cu2+Sulfate ion SO4 2-Hydrogen ion H+Hydroxyl ion OH-And hydronium ion H3O+。
At the same time, at the positive electrode 130, an oxidation reaction generates electrons e-According to the half reaction (half-reaction):
，
the copper ions in solution migrate to the negative electrode 120 where they are reduced and deposited as elemental copper, according to a half reaction:
，
since the side or edge W2 and the front face W1 of the wafer W are in direct contact with the cathode 120 through the planar portion 120a, the recessed portion 120b and the inclined portion 120c, the conductive state with the electric field is uniformly distributed on the wafer W. Thus, the configuration as an embodiment of the present invention alleviates irregular coverage during the plating process.
Although the present invention has been described in connection with the embodiments of the present invention and illustrated in the accompanying drawings, it is not limited thereto. It will be apparent to those skilled in the art that many alternatives, modifications, and variations can be made without departing from the spirit and scope of the invention.

Claims (11)

1. A wafer plating apparatus, comprising:
an electroplating bath;
an anode disposed at a lower portion of the plating tank;
electroplating solution; and
a cathode disposed on top of the plating bath and on which the wafer is placed, wherein the cathode includes a first portion electrically connected to an edge of the wafer and a second portion extending from the first portion and electrically connected to a side of the wafer.
2. Wafer plating apparatus as recited in claim 1 wherein said second portion of the cathode is sized and shaped to contact a side edge of said wafer.
3. Wafer plating apparatus as recited in claim 2 wherein said second portion of the cathode is recessed to substantially conform to a convex side edge of said wafer.
4. Wafer plating apparatus as recited in claim 1 wherein the cathode further includes a third portion extending from said second portion provided for aligning said wafer.
5. The wafer plating apparatus of claim 4, wherein the third portion of the cathode is shaped in an outwardly and upwardly inclined pattern at the top of the plating tank.
6. Wafer plating apparatus as recited in claim 1 wherein the cathode is annular and is electrically connected to the entire edge of the wafer.
7. A wafer plating apparatus, comprising:
a plating tank containing a plating solution;
an anode disposed at a lower portion of the plating tank; and
a cathode disposed on top of the plating bath and on which the wafer is placed;
wherein the cathode comprises:
a planar portion in direct contact with a face of the wafer;
a recessed portion extending from the planar portion and substantially mating with the convex side of the wafer; and
an inclined portion extending from the recessed portion and inclined upwardly and outwardly at a top of the plating tank.
8. The wafer plating apparatus of claim 7, wherein the plating cell comprises:
an inlet through which a plating solution is supplied into the plating tank; and
an outlet through which the used plating solution is discharged out of the plating tank.
9. Wafer plating apparatus as recited in claim 7 wherein said plating solution comprises an aqueous copper sulfate solution and said anode comprises a metal.
10. Wafer plating apparatus as recited in claim 7 wherein said cathode is stainless steel.
11. Wafer plating apparatus as recited in claim 7 wherein said cathode is annular and is electrically connected to the entire edge of said wafer.
CNA2005101362621A 2004-12-29 2005-12-26 Wafer electroplating apparatus for improving process uniformity Pending CN1807699A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR115407/04 2004-12-29
KR1020040115407A KR100634446B1 (en) 2004-12-29 2004-12-29 Wafer plating apparatus for improving process uniformity

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CN1807699A true CN1807699A (en) 2006-07-26

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CN115323470B (en) * 2022-10-11 2023-03-10 之江实验室 Device for realizing electroplating of multiple wafers

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US6303010B1 (en) * 1999-07-12 2001-10-16 Semitool, Inc. Methods and apparatus for processing the surface of a microelectronic workpiece
US6254760B1 (en) * 1999-03-05 2001-07-03 Applied Materials, Inc. Electro-chemical deposition system and method
EP1470268A2 (en) * 2000-10-03 2004-10-27 Applied Materials, Inc. Method and associated apparatus for tilting a substrate upon entry for metal deposition
US20050189228A1 (en) * 2004-02-27 2005-09-01 Taiwan Semiconductor Manufacturing Co., Ltd. Electroplating apparatus

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KR100634446B1 (en) 2006-10-16
US20060137977A1 (en) 2006-06-29

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Open date: 20060726