CN1805665A - Manufacturing method of strip type macromolecular ESD protective device - Google Patents
Manufacturing method of strip type macromolecular ESD protective device Download PDFInfo
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- CN1805665A CN1805665A CN 200510112429 CN200510112429A CN1805665A CN 1805665 A CN1805665 A CN 1805665A CN 200510112429 CN200510112429 CN 200510112429 CN 200510112429 A CN200510112429 A CN 200510112429A CN 1805665 A CN1805665 A CN 1805665A
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Abstract
The invention relates to a method for producing the new paster macromolecule base ESD protective device, which comprises: preparing preset pattern on the copper layer of PCB board; proportioning the raw materials for preparing the core material; preparing slurry and printing the core material; solidifying the core material; printing the packing layer; solidifying the packing layer and the upper electrode; incising; detecting the appearance; and classifying. Wherein, the prepared core material is compound material comprising macromolecule adhesive, conductive particles, insulated particles, and semi-conductive particles, while said macromolecule adhesive is one or the mixture of organic silicon resin, epoxide resin and rubber; said conductive particle is one or mixture of nickel powder, nickel carbonoxide and aluminum powder; said semi-conductive particle is one or mixture of zinc oxide, barium titanate and silicon carbide; and said insulated particle is one or mixture of silicon dioxide, alumina and magnesia.
Description
Technical field
The present invention relates to the manufacture method of overvoltage protection element, relate in particular to a kind of manufacture method of label type polymer base ESD protection device
Technical background
Modern electrical equipment just develops towards the integrated direction of miniaturization, and the function that while equipment has from strength to strength.This trend makes this class device very responsive to overvoltage, and especially Electrostatic Discharge is more and more serious to the loss that infringement brought of equipment.
Along with the development of mechanics of communication, the speed of modern communication equipment transmission data is more and more faster, and the I/O port of these equipment usually can be subjected to the harm of static discharge.This has just required a kind of static suppressor, can import ground to the strong electrostatic pulse that static discharge produces, thereby the workpiece of equipment is effectively protected.Though and more existing overvoltage protection elements also can endanger by preventing electro-static discharge (ESD); but the natural capacity of these devices itself is the tens of pico farads or the higher order of magnitude; during with these device protection high speed data transfer device ports; owing to too high natural capacity produces bigger insertion loss, data distortion takes place or problem such as lose thereby make in the high speed data transfer process.This just presses for us and makes a kind of electrostatic defending components and parts, and its natural capacity is several pico farads even lower numerical value, the high electric current that produces in the time of effectively handling the ESD transition, and the reliability of device is higher.
Because the natural capacity of high score base device is very little, if can be a kind of polymer-based ESD protective device of raw material preparing with the macromolecule matrix, so just can effectively lower the natural capacity of this class device, and the ESD that can satisfy high speed data transfer equipment protects.And high score base ESD device is easier to make paster class device, and this class device has the little advantage of geometry simultaneously, meets very much the trend of device miniaturization.This product of the numerous and confused research and development of some top electronic protection components and parts manufacturers in the world in recent years.Wherein more famous manufacturer comprises: Raychem, Copper, Litte1fuse, poly-ancient cooking vessel or the like, their released one after another oneself label type polymer base ESD protection devices.This class size of devices can be accomplished: 1812,1206,0805,0603,0402 or the like, even at a multichannel protection circuit such as element the inside integrated 2 tunnel, 4 tunnel.And the natural capacity of device itself is accomplished below the 1pf.Device can must arrive tens of volts to the electrostatic pulse clamper to different scopes such as hundreds of volts by needs according to different.And the ability of the esd pulse surge that device can bear can satisfy the standard of IEC 61000-4-2, and device stands tens of to thousands of inferior surge impacts.These companies with regard to this series products application multinomial patent.
Polymer-based ESD protective device often is designed to SMD device.This class device becomes relation in parallel with protected circuit.Be high-impedance state under the normal working voltage, when static discharge took place, the ESD protective device was because quantum tunneling effect changes low resistive state in the extremely short time, electrostatic current guiding ground.
This family macromolecule base ESD protective device is made up of four parts, can be referring to the structure chart of accompanying drawing 1 SMD high score base ESD device: substrate 1, termination electrode 2, core 4, protective layer 3 compositions.Wherein substrate 1 can be Al
2O
3Deng electronic ceramic, also can be the PCB epoxy plate.Protective layer 3 is generally epoxy and seals material.Core 4 is a polymer-based composite, and it has good pressure-sensitive character.The key core step that is prepared as this class device of research and development of core.
The structure of this core 4 can be referring to the structure chart of accompanying drawing 2 polymer-based ESD device core layers: with macromolecule matrix 7 is binding agent, in binding agent, insert inorganic particulates such as conductive particle 6, semiconductor particle 5, insulating particle 8, after these composite materials mix, obtain the core slurry, then according to the polymer-based ESD paster of the prepared of paster device device.
Summary of the invention
The object of the invention is to provide a kind of manufacture method of label type polymer base ESD protection device.
Goal of the invention of the present invention is achieved by the following technical solution: a kind of manufacture method of novel label type polymer base ESD protection device, the steps include: the figure that preparation designs in advance on pcb board copper layer, the raw material of preparation core is prepared burden in proportion, slurrying, printing core slurry, solidify core, the printing encapsulated layer, solidify encapsulated layer, upper end electrode, scribing, outward appearance detects, the test stepping, braid, wherein preparing core is composite material, comprise high polymer binder, conductive particle, insulating particle, semiconductor particle, described high polymer binder are organic siliconresin, epoxy resin, a kind of or its composition in the rubber; Described conductive particle can be a kind of or its composition in nickel powder, carbonyl nickel, the aluminium powder; Described semiconductor particle is a kind of or its composition in zinc oxide, barium titanate, the carborundum; Described insulating particle is a kind of or its composition in silicon dioxide, aluminium oxide, the magnesium oxide.
On the such scheme basis, the radius of described conductive particle is the 5-500 micron; Described semiconductor particle particle diameter is the 5-100 micron, or selects nanometer particle for use; The particle diameter of described insulating particle is the 5-100 micron, perhaps uses the particle of nanometer scale.
The each component volume content is in the described core: conductive particle 5-40%, insulating particle are that 5-20%, semiconductor particle are 10-40%, and high polymer binder is 40-60%.
Used substrate can be electronic ceramic substrate or printed circuit board (PCB) go back the oxygen plate.
When the core slurry for preparing is printed on the substrate, be provided with a groove between two electrodes, or the groove of a plurality of indentation arrangement, groove width is between the 2-30 mil.
In the process of above-mentioned preparation core, can stir high polymer binder with high speed agitator earlier, add conductive particle, semiconductor particle, insulating particle then successively, high polymer binder is evenly firm the bonding together of these three kinds of particles in core, thereby constitutes a core matrix network.Principle of the present invention is: high polymer binder plays bonding, disperses, cuts off inorganic particulate.The particle of these different sizes mates mutually and is dispersed in the macromolecule matrix, thereby has constituted a composite material network.Be distributed with between conductive particle: macromolecule matrix, insulating particle, semiconductor particle, the electric conductivity of these materials is relatively poor relatively.So this composite material network is high resistance state under operating voltage, almost can not form current path, has only faint leakage current.When an Electrostatic Discharge takes place, between certain voltage lower conductor particle these are nonconducting material generation quantum tunneling effect originally, the composite material network changes low resistance state rapidly into, at this moment very large electric current is arranged from composite material network flow mistake.
Description of drawings
The structure chart of the SMD high score base of Fig. 1 ESD device
The structure chart of the polymer-based ESD device of Fig. 2 core layer
The SMD polymer-based ESD device fabrication process flow figure of Fig. 3.
Embodiment
Shown in the SMD polymer-based ESD device fabrication process flow figure of Fig. 3, manufacture method of the present invention, it is following steps in regular turn: the figure that preparation designs in advance on pcb board copper layer, with the preparation core raw material prepare burden in proportion, slurrying, printing core slurry, curing core, printing encapsulated layer, curing encapsulated layer, upper end electrode, scribing, outward appearance detection, test stepping, braid.Among the present invention, the preparation of core slurry is the core of the whole course of processing, and core is the composite system of macromolecule matrix, conductive particle, semiconductor particle, insulating particle.According to the form below prescription is got organic siliconresin A, the B component of Dow Corning company, by 1: 1 quality than weighing, with high speed agitator be stirred to color of resin evenly till.First in regular turn weighing conductive particle, sneak in the resin that stirs, stir a period of time till conductive particle is evenly distributed in resin, weighing semiconductor particle again, at last, the weighing insulating particle is sneaked in the resin that stirs, and stirs a period of time till insulating particle is evenly distributed in resin.On the slurry coating substrate that mixes.Contained curing agent in our used organic siliconresin A, the B component, so mixed slurry is as long as by specification requires to heat just can well solidify under the condition of 150 ℃/1h.Thereby finish with the raw material of preparation core prepare burden in proportion, slurrying, printing core slurry, the process of solidifying core.
When the core slurry for preparing is printed on the substrate, can only carve a groove between two electrodes, also can carve a plurality of groove indentations and arrange, and total groove width can change between the 2-40 mil.
Component resistance and the trigger voltage such as the following table of each embodiment preparation:
| The prescription sequence number | Proportioning components (mass percent wt%) | Resistance (ohm) | The representative value of trigger voltage (volt) | |||
| Ni | SiC | SiO 2 | Silicone resin | |||
| Embodiment 1 | 42 | 5.8 | 0.2 | 52 | 3.5*10 8 | 330 |
| | 40 | 11.1 | 0.2 | 48.7 | 2*10 8 | 360 |
| | 37.5 | 15.9 | 0.2 | 46.4 | 4*10 8 | 306 |
| Embodiment 4 | 36 | 18.8 | 0.2 | 45 | 4.1*10 8 | 240 |
| Embodiment 5 | 44 | 5.8 | 0.2 | 50 | 1.7*10 8 | 35 |
| Embodiment 6 | 41.5 | 11.1 | 0.2 | 47.2 | 4.7*10 8 | 22 |
| Embodiment 7 | 39.3 | 15.9 | 0.2 | 44.6 | 3.8*10 8 | 150 |
| Embodiment 8 | 37.9 | 18.8 | 0.2 | 43.1 | 3.2*10 8 | 90 |
Claims (5)
1. the manufacture method of a novel label type polymer base ESD protection device, the steps include: the figure that preparation designs in advance on pcb board copper layer, the raw material of preparation core is prepared burden in proportion, slurrying, printing core slurry, solidify core, the printing encapsulated layer, solidify encapsulated layer, upper end electrode, scribing, outward appearance detects, the test stepping, braid, wherein preparing core is composite material, comprise high polymer binder, conductive particle, insulating particle, semiconductor particle, described high polymer binder are organic siliconresin, epoxy resin, a kind of or its composition in the rubber; Described conductive particle can be a kind of or its composition in nickel powder, carbonyl nickel, the aluminium powder; Described semiconductor particle is a kind of or its composition in zinc oxide, barium titanate, the carborundum; Described insulating particle is a kind of or its composition in silicon dioxide, aluminium oxide, the magnesium oxide.
2. the manufacture method of novel label type polymer base ESD protection device according to claim 1, it is characterized in that: the radius of described conductive particle is the 5-500 micron; Described semiconductor particle particle diameter is the 5-100 micron, or selects nanometer particle for use; The particle diameter of described insulating particle is the 5-100 micron, perhaps uses the particle of nanometer scale.
3. the manufacture method of novel label type polymer base ESD protection device according to claim 1 and 2, it is characterized in that the volume content of each component in core is in the core: conductive particle 5-40%, insulating particle are that 5-20%, semiconductor particle are that 10-40%, high polymer binder are 40-60%.
4. the manufacture method of novel label type polymer base ESD protection device according to claim 1 is characterized in that: used substrate can be electronic ceramic substrate or printed circuit board (PCB) go back the oxygen plate.
5. the manufacture method of novel label type polymer base ESD protection device according to claim 4, it is characterized in that: when the core slurry for preparing is printed on the substrate, be provided with a groove between two electrodes, or the groove of a plurality of indentation arrangement, groove width is between the 2-40 mil.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101124290A CN100559919C (en) | 2005-12-30 | 2005-12-30 | The manufacture method of label type polymer base ESD protection device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101124290A CN100559919C (en) | 2005-12-30 | 2005-12-30 | The manufacture method of label type polymer base ESD protection device |
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| CN1805665A true CN1805665A (en) | 2006-07-19 |
| CN100559919C CN100559919C (en) | 2009-11-11 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103797669A (en) * | 2011-09-14 | 2014-05-14 | 株式会社村田制作所 | ESD protection device and method of manufacturing same |
| CN104464993A (en) * | 2013-09-12 | 2015-03-25 | 中国振华集团云科电子有限公司 | Method for preparing static-suppressor functional slurry cured at low temperature |
| CN104464992A (en) * | 2013-09-12 | 2015-03-25 | 中国振华集团云科电子有限公司 | Method for preparing functional slurry of chip-type static suppressor |
| CN112770614A (en) * | 2020-12-07 | 2021-05-07 | 深圳顺络电子股份有限公司 | Electrostatic suppressor and manufacturing method thereof |
-
2005
- 2005-12-30 CN CNB2005101124290A patent/CN100559919C/en active Active
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103797669A (en) * | 2011-09-14 | 2014-05-14 | 株式会社村田制作所 | ESD protection device and method of manufacturing same |
| US9117834B2 (en) | 2011-09-14 | 2015-08-25 | Murata Manufacturing Co., Ltd. | ESD protection device and method for producing the same |
| CN103797669B (en) * | 2011-09-14 | 2016-08-17 | 株式会社村田制作所 | ESD protective device and manufacture method thereof |
| CN104464993A (en) * | 2013-09-12 | 2015-03-25 | 中国振华集团云科电子有限公司 | Method for preparing static-suppressor functional slurry cured at low temperature |
| CN104464992A (en) * | 2013-09-12 | 2015-03-25 | 中国振华集团云科电子有限公司 | Method for preparing functional slurry of chip-type static suppressor |
| CN104464992B (en) * | 2013-09-12 | 2017-02-08 | 中国振华集团云科电子有限公司 | Method for preparing functional slurry of chip-type static suppressor |
| CN104464993B (en) * | 2013-09-12 | 2017-02-08 | 中国振华集团云科电子有限公司 | Method for preparing static-suppressor functional slurry cured at low temperature |
| CN112770614A (en) * | 2020-12-07 | 2021-05-07 | 深圳顺络电子股份有限公司 | Electrostatic suppressor and manufacturing method thereof |
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| Publication number | Publication date |
|---|---|
| CN100559919C (en) | 2009-11-11 |
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Owner name: SHANGHAI CHANGYUAN WAYON CIRCUIT PROTECTION CO., L Free format text: FORMER NAME: SHANGHAI CHANGYUAN WEIAN ELECTRONIC LINE PROTECTION CO., LTD. |
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Address after: 200092, Siping Road, Shanghai, No. 701, 715-Z Patentee after: Shanghai Changyuan Wayon Circuit Protection Co.,Ltd. Address before: 200092, Siping Road, Shanghai, No. 701, 715-Z Patentee before: Shanghai Changyuan Wayon Circuit Protection Co.,Ltd. |
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Address after: 200083 806, floor 8, No. 125, Liuying Road, Hongkou District, Shanghai Patentee after: Shanghai Wei'an Electronic Co.,Ltd. Address before: 200092, Siping Road, Shanghai, No. 701, 715-Z Patentee before: Shanghai Changyuan Wayon Circuit Protection Co.,Ltd. |
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Address after: Room 806, 8th floor, 125 Liuying Road, Hongkou District, Shanghai 200083 Patentee after: Shanghai Weian Electronics Co.,Ltd. Address before: 806, 8th floor, 125 Liuying Road, Hongkou District, Shanghai 200083 Patentee before: Shanghai Wei'an Electronic Co.,Ltd. |
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