CN104464992A - Method for preparing functional slurry of chip-type static suppressor - Google Patents
Method for preparing functional slurry of chip-type static suppressor Download PDFInfo
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- CN104464992A CN104464992A CN201310429127.0A CN201310429127A CN104464992A CN 104464992 A CN104464992 A CN 104464992A CN 201310429127 A CN201310429127 A CN 201310429127A CN 104464992 A CN104464992 A CN 104464992A
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Abstract
The invention discloses a method for preparing functional slurry of a chip-type static suppressor. The preparation method comprises the following steps: 1. mixing the following compounds: 30-40 parts by mass of lead oxide, 30-45 parts by mass of alumina, 4-6 parts by mass of silica, 15-25 parts by mass of boron trioxide, and 2-6 parts by mass of zinc oxide; 2. performing ball milling of the mixture above and drying at a temperature of 100 DEG C; 3. heating the dried raw materials at a temperature elevated to 1200 DEG C in three hours and maintaining the temperature for 1 hour, then cooling naturally; 4. performing vibration milling and ball milling of ceramic substances resulting from a reaction to obtain ceramic powder, and carrying out a granularity test and a specific surface area test; 5. adding a certain amount of aluminium powder and glass powder into the ceramic powder, fully mixing, and adding an organic carrier to roll into the slurry. The functional slurry developed in the invention can be applied to a chip-type static suppressor which is able to bear static impact of 8KV voltage for more than 1000 times.
Description
Technical field
The present invention relates to a kind of overvoltage protection element material that electrostatic is produced, particularly relate to a kind of preparation method utilizing thick-film technique platform to make small size chip static suppressor function slurry used.
Background technology
Static discharge (Electrostatic Discharge, ESD) be cause electronic product to be subject to excessive electric stress (Electrical Overstress, EOS) main cause lost efficacy, main static discharge pattern comprises: human-body model (HBM), machine discharge mode (MM), element charge mode (CDM) and electric field induction pattern (FIM).
Under normal circumstances, the harm form of static discharge to electronic product has: one, and electrostatic pulse directly impacts electronic product, causes device failure, and wherein portable type electronic product is especially easily subject to the damage of the ESD that human contact produces.Two, electrostatic impact metal object, the electromagnetic field produced instantaneously causes neighbouring electronic product afunction.
Along with the development of electronic communication technology and surface mounting technology SMT (Surface Mount Technology), high density, miniaturization and light-weighted electronic device, become the main flow in market.But, because its operating voltage is low, be very easily subject to the threat of static discharge; Simultaneously because device feature size reduces gradually, the active layer of integrated circuit and gate oxide relatively thinner, more responsive to the impact of circuit immediate current, voltage.Therefore ESD will cause electronic device and the irreversible infringement of Circuits System, and electronic product cannot normally be worked.According to the estimation of U.S.'s Bell Laboratory, the whole world is integrated circuit manufacturing industry one only, reaches tens billion of dollar every year because electrostatic discharge effect causes damage.
In order to suppress electrostatic hazard, have employed a lot of measure: mainly comprise Si semiconductor ESD device, packet routing device (TVS), varistor, polymer ESD device etc., these devices can both reduce the voltage and the energy that flow to circuit, it is made to reach a lower level, avoid ESD to the damage of assembly and components and parts, but respectively there are pluses and minuses, such as Si semiconductor ESD device has polarity, can only one direction protective circuit, and capacitance and leakage current high, expensive; Multilayer chip varistor also has accurate clamping ability poor, and leakage current, electric capacity are large, the shortcoming of complex process.
The static suppressor related in the present invention adopts thick film print technology: be printed on aluminium oxide ceramic substrate by electrostatic inhibit feature layer, then the glass paste of serviceability excellence is encapsulated, have technique simple, be convenient to the features such as production, the miniaturization of products, cost are low, excellent performance.
The core material of this device and static suppressor slurry; this material system is high resistance when being applied in low-voltage; it is low resistance state when being applied in high voltage; therefore can parallel connection ground connection in circuit; when ESD occurs; rapidly energy can be directed into ground, play the effect of the whole electronic line component of available protecting.
At present, the static suppressor of the type is mainly towards highly reliable, low trigger voltage, low clamping voltage future development, and its deciding factor is exactly material, therefore great to the Research Significance of this slurry.
Summary of the invention
The present invention is directed to existing electrostatic defending components and parts complex manufacturing technology, the more high deficiency of cost, a kind of preparation method of thick film static suppressor function slurry is provided.
For achieving the above object, the invention provides following technical scheme:
A preparation method for chip static suppressor function slurry, comprises the following steps:
Step (1): in mass ratio by lead oxide 30 ~ 40, alundum (Al2O3) 30 ~ 45, silicon dioxide 4 ~ 6, diboron trioxide 15 ~ 25, zinc oxide 2 ~ 6 is fully mixing first, then adds deionized water, ball milling 1.5 ~ 2.5h, rotating speed 300 ~ 350 revs/min, the ball-milled mixtures obtained is 80 ~ 120 DEG C of dry for standby;
Step (2): prepare ceramic powder, comprises following sub-step,
Step (2.1): the raw material that step (1) is dried is risen to 1000 ~ 1300 DEG C in 2.5 ~ 3.5h and after being incubated 0.5 ~ 1.5h, naturally cooling and obtain whiteware;
Step (2.2): first vibration is carried out to step (2.1) gained pottery, makes granularity be less than 2mm, then ball milling 3 ~ 5h, rotating speed 350 ~ 400 revs/min, and 80 ~ 120 DEG C of oven dry, to pulverize 80 ~ 120 mesh sieves for subsequent use;
Step (3): rolling chip static suppressor function slurry, comprises following sub-step,
Step (3.1): the ceramic powder obtain step (2.2) and pre-prepd metal powder and glass dust carry out testing graininess;
Step (3.2): take 100 parts of ceramic powders, adds 15 ~ 40 parts of glass dust and 5 ~ 15 parts of metal powders, fully mixes, then add the organic carrier accounting for total solid powder quality 15 ~ 30%, utilize three-high mill to roll slurry.
As the further scheme of the present invention: described ceramic powder is 0.1 ~ 20 μm by granularity after vibration, ball milling.
As the present invention's further scheme: described ceramic powder is 1 ~ 10 μm by granularity after vibration, ball milling.
As the further scheme of the present invention: with agate tank planetary ball mill 2h, rotating speed 322rpm in step (1), the ball-milled mixtures obtained is 100 DEG C of dry for standby; Ball in described agate tank: material: the mass ratio of water is 3:1:1.
As the further scheme of the present invention: with agate tank planetary ball mill 4h in step (2.2), rotating speed 387 revs/min, and 100 DEG C of oven dry, to pulverize 100 mesh sieves for subsequent use, ball in described agate tank: expect: the mass ratio of water is 2:1:1.
As the further scheme of the present invention: the solid material of described chip static suppressor function slurry contains glass dust, a main bonding effect, the glass dust with suitable softening point and thermal coefficient of expansion is selected according to the sintering temperature of chip static suppressor function slurry, used in the present invention is a class lead borosilicate glass powder, softening point 450 ~ 500 DEG C, granularity 0.1 ~ 2 μm.
As the further scheme of the present invention: described metal powder is silver, copper, nickel or aluminium, granularity is 0.1 ~ 5 μm.
As the present invention's further scheme: described metal powder is aluminium powder, granularity 1 ~ 5 μm.
As the further scheme of the present invention: described organic carrier is prepared under condition of water bath heating by ethyl cellulose and butyl carbitol, plays and is uniformly dispersed by solid material, and be applicable to the effect of thick film screen typography platform.
As the further scheme of the present invention: the sintering temperature of described chip static suppressor function slurry is determined by the metal powder characteristic in slurry, and when the metal powder chosen is aluminium powder, sintering temperature, at 600 DEG C, sinters in air.
Compared with prior art; the invention has the beneficial effects as follows: electronic devices and components chip type, miniaturization are inevitable developing direction; and chip static suppressor is indispensable at electronic circuit as protection class components and parts, therefore high performance static suppressor function slurry can effectively advance chip static suppressor to miniaturization, low trigger voltage, low clamping voltage, the strong direction fast development of resistance to impact ability.The invention solves a key problem: prepare a kind of thick film electrostatic defending slurry; at 600 ~ 850 DEG C, a kind of composite film is burnt till after this slurry is dried by silk screen printing; this composite film has very strong electrostatic rejection ability; when can solve electrostatic generation in very little space; quick response, to release energy and resistance to high energy impact events such as to ask at the topic; effectively can protect electrostatic, play the effect protecting whole circuit.The chip static suppressor function slurry that metal powder of the present invention adopts aluminium powder to prepare has good combination property, and slurry to be applied on chip static suppressor the electrostatic of resistance to 8KV impact ability number of times more than 1000 times, trigger voltage and clamping voltage lower.
Accompanying drawing explanation
Fig. 1 is the image utilizing sem observation after chip static suppressor function slurry of the present invention burns till.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
A kind of preparation method of chip static suppressor function slurry, utilize the glass with nonlinear resistance property, metal and ceramic three-phase composite thing material system, ceramic phase containing many oxide, glassy phase ensure that this material system is high resistance when being applied in low-voltage, and suitable Metal Phase ensures that this material is low resistance state when being applied in high voltage: under 20V voltage, resistance is generally at more than 10G Ω, ensure that when not having electrostatic to occur in normal operating circuit, leakage current is low to moderate receives peace rank, this possesses clear superiority compared to zinc oxide varistor etc.
In addition, suitable ratio is adopted for metal powder, glass dust and ceramic powder, guarantee around metal powder coated by ceramic phase, thus can not ohmic contact be formed in electrostatic shots, substantially increase resistance to impact ability.
Embodiment 1
In the embodiment of the present invention, the preparation method of described chip static suppressor function slurry, step is as follows:
Step (1): in mass ratio by lead oxide 30, alundum (Al2O3) 30, silicon dioxide 4, diboron trioxide 15, zinc oxide 2 is fully mixing first, then adds deionized water, with agate tank planetary ball mill 1.5h, rotating speed 300 revs/min, the ball-milled mixtures obtained is 80 DEG C of dry for standby;
Step (2): prepare ceramic powder, comprises following sub-step,
Step (2.1): the raw material that step (1) is dried is risen to 1000 DEG C in 2.5h and after being incubated 0.5h, naturally cooling and obtain whiteware;
Step (2.2): first vibration is carried out to step (2.1) gained pottery, makes granularity be less than 2mm, then use agate tank planetary ball mill 3h, rotating speed 350 revs/min, and 80 DEG C of oven dry, to pulverize 80 mesh sieves for subsequent use;
Step (3): rolling chip static suppressor function slurry, comprises following sub-step,
Step (3.1): the ceramic powder obtain step (2.2) and pre-prepd metal powder and glass dust carry out testing graininess;
Step (3.2): take 100 parts of ceramic powders, adds 15 parts of glass dust and 5 parts of metal powders, fully mixes, then add the organic carrier accounting for total solid powder quality 15%, utilize three-high mill to roll slurry.
Embodiment 2
In the embodiment of the present invention, the preparation method of described chip static suppressor function slurry, step is as follows:
Step (1): in mass ratio by lead oxide 35, alundum (Al2O3) 40, silicon dioxide 5, diboron trioxide 20, zinc oxide 4 is fully mixing first, then adds deionized water, with agate tank planetary ball mill 2h, rotating speed 322 revs/min, the ball-milled mixtures obtained is 100 DEG C of dry for standby;
Step (2): prepare ceramic powder, comprises following sub-step,
Step (2.1): the raw material that step (1) is dried is risen to 1200 DEG C in 2h and after being incubated 1h, naturally cooling and obtain whiteware;
Step (2.2): first vibration is carried out to step (2.1) gained pottery, makes granularity be less than 2mm, then use agate tank planetary ball mill 4h, rotating speed 387 revs/min, and 100 DEG C of oven dry, to pulverize 100 mesh sieves for subsequent use;
Step (3): rolling chip static suppressor function slurry, comprises following sub-step,
Step (3.1): the ceramic powder obtain step (2.2) and pre-prepd metal powder and glass dust carry out testing graininess;
Step (3.2): take 100 parts of ceramic powders, adds 30 parts of glass dust and 10 parts of metal powders, fully mixes, then add the organic carrier accounting for total solid powder quality 20%, utilize three-high mill to roll slurry.
Embodiment 3
In the embodiment of the present invention, the preparation method of described chip static suppressor function slurry, step is as follows:
Step (1): in mass ratio by lead oxide 40, alundum (Al2O3) 45, silicon dioxide 6, diboron trioxide 25, zinc oxide 6 is fully mixing first, then adds deionized water, with agate tank planetary ball mill 2.5h, rotating speed 350 revs/min, the ball-milled mixtures obtained is 120 DEG C of dry for standby;
Step (2): prepare ceramic powder, comprises following sub-step,
Step (2.1): the raw material that step (1) is dried is risen to 1300 DEG C in 3.5h and after being incubated 1.5h, naturally cooling and obtain whiteware;
Step (2.2): first vibration is carried out to step (2.1) gained pottery, makes granularity be less than 2mm, then use agate tank planetary ball mill 5h, rotating speed 400 revs/min, and 120 DEG C of oven dry, to pulverize 120 mesh sieves for subsequent use;
Step (3): rolling chip static suppressor function slurry, comprises following sub-step,
Step (3.1): the ceramic powder obtain step (2.2) and pre-prepd metal powder and glass dust carry out testing graininess;
Step (3.2): take 100 parts of ceramic powders, adds 40 parts of glass dust and 15 parts of metal powders, fully mixes, then add the organic carrier accounting for total solid powder quality 30%, utilize three-high mill to roll slurry.
To those skilled in the art, obviously the invention is not restricted to the details of above-mentioned one exemplary embodiment, and when not deviating from spirit of the present invention or essential characteristic, the present invention can be realized in other specific forms.Therefore, no matter from which point, all should embodiment be regarded as exemplary, and be nonrestrictive, scope of the present invention is limited by claims instead of above-mentioned explanation, and all changes be therefore intended in the implication of the equivalency by dropping on claim and scope are included in the present invention.Any Reference numeral in claim should be considered as the claim involved by limiting.
In addition, be to be understood that, although this specification is described according to execution mode, but not each execution mode only comprises an independently technical scheme, this narrating mode of specification is only for clarity sake, those skilled in the art should by specification integrally, and the technical scheme in each embodiment also through appropriately combined, can form other execution modes that it will be appreciated by those skilled in the art that.
Claims (10)
1. a preparation method for chip static suppressor function slurry, is characterized in that, comprise the following steps:
Step (1): in mass ratio by lead oxide 30 ~ 40, alundum (Al2O3) 30 ~ 45, silicon dioxide 4 ~ 6, diboron trioxide 15 ~ 25, zinc oxide 2 ~ 6 is fully mixing first, then adds deionized water, ball milling 1.5 ~ 2.5h, rotating speed 300 ~ 350 revs/min, the ball-milled mixtures obtained is 80 ~ 120 DEG C of dry for standby;
Step (2): prepare ceramic powder, comprises following sub-step,
Step (2.1): the raw material that step (1) is dried is risen to 1000 ~ 1300 DEG C in 2.5 ~ 3.5h and after being incubated 0.5 ~ 1.5h, naturally cooling and obtain whiteware;
Step (2.2): first vibration is carried out to step (2.1) gained pottery, makes granularity be less than 2mm, then ball milling 3 ~ 5h, rotating speed 350 ~ 400 revs/min, and 80 ~ 120 DEG C of oven dry, to pulverize 80 ~ 120 mesh sieves for subsequent use;
Step (3): rolling chip static suppressor function slurry, comprises following sub-step,
Step (3.1): the ceramic powder obtain step (2.2) and pre-prepd metal powder and glass dust carry out testing graininess;
Step (3.2): take 100 parts of ceramic powders, adds 15 ~ 40 parts of glass dust and 5 ~ 15 parts of metal powders, fully mixes, then add the organic carrier accounting for total solid powder quality 15 ~ 30%, utilize three-high mill to roll slurry.
2. the preparation method of chip static suppressor function slurry according to claim 1, it is characterized in that, described ceramic powder is 0.1 ~ 20 μm by granularity after vibration, ball milling.
3. the preparation method of chip static suppressor function slurry according to claim 1 and 2, it is characterized in that, described ceramic powder is 1 ~ 10 μm by granularity after vibration, ball milling.
4. the preparation method of chip static suppressor function slurry according to claim 1, is characterized in that, with agate tank planetary ball mill 2h in step (1), and rotating speed 322 revs/min, the ball-milled mixtures obtained is 100 DEG C of dry for standby; Ball in described agate tank: material: the mass ratio of water is 3:1:1.
5. the preparation method of chip static suppressor function slurry according to claim 1, it is characterized in that, with agate tank planetary ball mill 4h in step (2.2), rotating speed 387 revs/min, and 100 DEG C of oven dry, to pulverize 100 mesh sieves for subsequent use, ball in described agate tank: material: the mass ratio of water is 2:1:1.
6. the preparation method of chip static suppressor function slurry according to claim 1, is characterized in that, what described glass dust adopted is a class lead borosilicate glass powder, softening point 450 ~ 500 DEG C, granularity 0.1 ~ 2 μm.
7. the preparation method of chip static suppressor function slurry according to claim 1, it is characterized in that, described metal powder is silver, copper, nickel or aluminium, and granularity is 0.1 ~ 5 μm.
8. the preparation method of the chip static suppressor function slurry according to claim 1 or 7, it is characterized in that, described metal powder is aluminium powder, granularity 1 ~ 5 μm.
9. the preparation method of chip static suppressor function slurry according to claim 1, it is characterized in that, described organic carrier is prepared under condition of water bath heating by ethyl cellulose and butyl carbitol.
10. the preparation method of the chip static suppressor function slurry according to claim 1 or 7, it is characterized in that, the sintering temperature of described chip static suppressor function slurry is determined by the metal powder characteristic in slurry, when the metal powder chosen is aluminium powder, sintering temperature, at 600 DEG C, sinters in air.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107629466A (en) * | 2017-09-20 | 2018-01-26 | 苏州晶讯科技股份有限公司 | A kind of function slurry for chip macromolecule static suppressor |
| CN108154982A (en) * | 2017-12-20 | 2018-06-12 | 广东爱晟电子科技有限公司 | A kind of chip type fixed resistance and preparation method thereof |
| CN108878082A (en) * | 2018-06-13 | 2018-11-23 | 南京萨特科技发展有限公司 | A kind of ultra-low capacitance static suppressor and preparation method thereof |
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| CN1805649A (en) * | 2005-12-30 | 2006-07-19 | 上海维安热电材料股份有限公司 | Macromolecular ESD protective component and its manufacturing method |
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| CN1805665A (en) * | 2005-12-30 | 2006-07-19 | 上海维安热电材料股份有限公司 | Manufacturing method of strip type macromolecular ESD protective device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107629466A (en) * | 2017-09-20 | 2018-01-26 | 苏州晶讯科技股份有限公司 | A kind of function slurry for chip macromolecule static suppressor |
| CN108154982A (en) * | 2017-12-20 | 2018-06-12 | 广东爱晟电子科技有限公司 | A kind of chip type fixed resistance and preparation method thereof |
| CN108878082A (en) * | 2018-06-13 | 2018-11-23 | 南京萨特科技发展有限公司 | A kind of ultra-low capacitance static suppressor and preparation method thereof |
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