CN108878082B - Ultralow-capacitance electrostatic suppressor and preparation method thereof - Google Patents
Ultralow-capacitance electrostatic suppressor and preparation method thereof Download PDFInfo
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- CN108878082B CN108878082B CN201810619687.5A CN201810619687A CN108878082B CN 108878082 B CN108878082 B CN 108878082B CN 201810619687 A CN201810619687 A CN 201810619687A CN 108878082 B CN108878082 B CN 108878082B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/003—Thick film resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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Abstract
The invention provides an ultra-low capacitance electrostatic suppressor, which comprises a substrate, an electrode arranged on the surface of the substrate, at least one etching groove formed in the electrode, an electrostatic material filled in the etching groove, a protective layer covering the surfaces of the electrode and the electrostatic material, and two terminals respectively arranged on two sides of the substrate, wherein the electrostatic material comprises: insulating isolation powder, a solvent, a dispersing agent, conductive metal powder and an insulating coating material. The electrostatic suppressor realizes electrostatic protection by releasing energy through point discharge between conductive metal powder particles in an electrostatic material, has high reliability compared with the protection principle of a pressure-sensitive material, realizes ultralow capacitance of less than 0.05pF for the whole product, and can be applied to electrostatic protection of a high-frequency circuit; the formula system uses fewer raw materials, has low cost, is easy to produce by using a thick film process, and improves the reliability of the product in severe temperature and humidity environments by selecting high-temperature-resistant and humidity-resistant resin as a protective layer.
Description
Technical Field
The invention relates to the technical field of electrostatic protection, in particular to an electrostatic suppressor and a preparation method thereof.
Background
In recent years, electronic products are developed rapidly, the working environment of the electronic products has the characteristics of higher and higher signal frequency, wider and wider frequency band, lower and lower working voltage and the like, and the traditional overvoltage protection devices such as piezoresistors and the like are easy to cause high-frequency signal distortion due to overlarge self capacitance, so that the protection which is not suitable for high-frequency circuits is gradually replaced by static suppressors.
Most of the common electrostatic suppressors on the market adopt pressure-sensitive materials, and the common electrostatic suppressors are in a high-resistance state under low voltage according to the nonlinear volt-ampere characteristics of the pressure-sensitive materials; when high voltage passes through the pressure-sensitive material, the high voltage is discharged between crystal grains and crystal boundaries to form tunnel breakdown, and the energy is released to the ground in a low-resistance state, so that the protection of a post-stage circuit is realized. However, it is well known that the nonlinear volt-ampere characteristic of the voltage-sensitive material is poor, the clamping voltage is high at a high voltage and cannot match the electrostatic protection in a low-voltage environment, the leakage current is high at a low voltage, the power consumption of a circuit is high, the temperature rise is high, the voltage-sensitive material is easy to age and lose efficacy after being subjected to multiple impacts of static electricity, and the nonlinear volt-ampere characteristic is lost, so that the electrostatic protection function is lost.
Disclosure of Invention
In order to solve the problems, the invention discloses an electrostatic protection device which has ultralow capacitance, is resistant to more times of electrostatic impact and can stably have electrostatic protection characteristics for a long time, and a preparation method thereof, so that the electrostatic protection requirement of a high-frequency circuit is met.
In order to achieve the purpose, the invention provides the following technical scheme:
an ultra-low capacitance electrostatic suppressor comprises a substrate, an electrode arranged on the surface of the substrate, at least one groove formed in the electrode, an electrostatic material filled in the groove, a protective layer covering the surfaces of the electrode and the electrostatic material, and two terminals respectively arranged on two sides of the substrate, wherein the electrostatic material comprises the following components in parts by weight: 100 parts of primary slurry, 40-70 parts of conductive metal powder and 10-30 parts of insulating coating material, wherein the primary slurry comprises insulating isolation powder, a solvent and a dispersing agent, and the mass ratio of the insulating isolation powder is as follows: solvent: the dispersant is (49-70), (29-50) and (0.1-1).
Further, the insulating isolation powder particles are larger than the conductive metal powder particles.
Further, the insulating isolation powder is spherical silicon dioxide powder with D50 of 1.0-4.0 μm and a relative dielectric constant of 3.88 under 1 MHZ; the conductive metal powder is spherical nickel powder or silver powder or aluminum powder with the particle size D50 of 0.2-1.0 mu m.
Furthermore, the insulating coating material is phenolic resin, epoxy resin or silicon resin with low dielectric constant.
Further, the solvent is a mixture of terpineol and butyl cellosolve; the dispersing agent is soybean lecithin with longer solvent chain and strong adsorption capacity.
The invention also provides a preparation method of the ultralow capacitance electrostatic suppressor, which comprises the following steps:
primary pulping: uniformly mixing insulating isolation powder, a solvent and a dispersing agent, and performing ball milling for 1 hour to prepare slurry, wherein the isolation powder accounts for 49-70 parts of the total mass of the primary slurry; the solvent accounts for 29-50 parts of the total mass of the primary slurry; the dispersant accounts for 0.1-1 part of the total mass of the primary slurry;
secondary pulping: taking 100 parts of the mixed slurry, sequentially adding 10-30 parts of insulating coating materials and 40-70 parts of conductive metal powder into the slurry, uniformly mixing, rolling and grinding to prepare the slurry with the viscosity of 2-6 ten thousand Pa.S for boxing so as to facilitate subsequent printing;
The method comprises the steps of firstly drying a substrate for 20 minutes in a box type furnace at the temperature of 150 ℃ by using screen printing metal slurry or conductive adhesive, and then sintering and molding at the maximum temperature of about 850 ℃ for 15-20 minutes; if the conductive adhesive is selected, the conductive adhesive can be directly dried and formed in an oven at 150 ℃.
Etching the electrode formed in the step 2 by using laser to form at least one groove, wherein the width of the groove is 20-100 micrometers;
Filling the electrostatic material prepared in the step 1 in all grooves formed on the electrode in the step 3 by using screen printing, drying in a 120 ℃ drying oven for 12 hours, and drying in a 150 ℃ drying oven for 1 hour for curing and forming;
step 5, manufacturing a protective layer
Screen printing epoxy resin or silicon resin and phenolic resin on a substrate, and then curing and molding in an oven at 120 ℃ for 1 hour;
step 6, slitting, grading and end manufacturing
After the five steps are completed, the substrate is subjected to stripping, sputtering and classification to form chips meeting the size specification, and then the chips are electroplated on the end heads to be plated with nickel and tin, so that a finished product is finally formed.
Further, in the step 1, the insulating isolation powder particles are larger than the conductive metal powder particles.
Further, the insulating isolation powder in the step 1 is spherical silicon dioxide powder with D50 of 1.0-4.0 μm and a relative dielectric constant of 3.88 at 1 MHZ; the conductive metal powder is spherical nickel powder or silver powder or aluminum powder with the particle size D50 of 0.2-1.0 mu m.
Furthermore, the thickness of the nickel layer electroplated in the step 6 is 1-3 μm, and the thickness of the tin layer is 4-8 μm.
Compared with the prior art, the invention has the following advantages and beneficial effects:
1. the electrostatic protection is realized by releasing energy through point discharge among conductive metal powder particles in the electrostatic material, and the electrostatic protection has high reliability compared with the protection principle of a pressure-sensitive material; the formula system uses fewer raw materials, has low cost, is easy to produce by using a thick film process, and improves the reliability of the product in severe temperature and humidity environments by selecting high-temperature-resistant and humidity-resistant resin as a protective layer.
2. Because the granularity D50 of insulating isolation powder particles in the electrostatic material is larger than that of conductive metal powder particles, the spherical conductive metal powder particles are filled with the spherical insulating isolation powder particles to form perfect accumulation, and metal particle-insulating particle-metal particle units are formed in electrode grooves with limited width as much as possible, so that the service life of the product for resisting electrostatic impact is prolonged.
3. The electrostatic material adopts a material with a relative dielectric constant less than 6, an insulation resistance greater than 500 MOmega and a breakdown voltage greater than 1000V/mum as a substrate, so that the mechanical strength and the insulation resistance of the substrate after the product bears multiple electrostatic impacts can be ensured, and the stray capacitance of the product can be reduced; spherical silicon dioxide powder with the relative dielectric constant of 3.88 at 1MHZ is used as an insulating isolation material, so that the capacitance of a unit of metal particles, insulating particles and metal particles is reduced, and the capacitance of the whole product is reduced; meanwhile, the electrode adopts a mode of connecting a plurality of groove capacitors in series, and the capacitance of the whole product can be reduced. Therefore, the electrostatic suppressor provided by the invention has an ultra-small capacitance, the whole product realizes that the ultra-low capacitance is less than 0.05pF, and the electrostatic suppressor can be applied to electrostatic protection of a high-frequency line.
Drawings
Fig. 1 is a schematic structural diagram of an ultra-low capacitance electrostatic suppressor provided by the present invention.
FIG. 2 is a top view of the interior of the static suppressor of the present invention;
description of the drawings:
1-substrate, 2-electrode, 3-electrostatic material, 4-protective layer, 5-terminal.
Detailed Description
The technical solutions provided by the present invention will be described in detail below with reference to specific examples, and it should be understood that the following specific embodiments are only illustrative of the present invention and are not intended to limit the scope of the present invention.
The invention provides an ultra-low capacitance electrostatic suppressor, which comprises a substrate 1, an electrode 2, a protective layer 4 and two terminals 5, wherein the electrode is arranged on the surface of the substrate, one or more etching grooves are formed in the middle of the electrode, an electrostatic material 3 is filled in the etching grooves, the protective layer is covered on the surfaces of the electrode and the electrostatic material and used for protecting the internal electrode and the electrostatic material, and the two terminals are respectively arranged on the two sides of the substrate. The electrostatic material comprises insulating isolation powder, conductive metal powder, an insulating coating material, a solvent and a dispersing agent.
Specifically, the substrate can be made of a material with a relative dielectric constant of less than 6, an insulation resistance of more than 500 MOmega and a breakdown voltage of more than 1000V/mum under high frequency (more than or equal to 1 MHz). Such as alumina ceramics, aluminum nitride ceramics, FR-4 epoxy glass fiber board. The material can ensure the mechanical strength and the insulation resistance of the substrate after the product bears multiple times of electrostatic impact, and can also reduce the stray capacitance of the product. The electrode can be selected from high-temperature sintered metal paste, such as one or more mixed paste of silver, palladium and copper, and can also be selected from low-temperature cured conductive adhesive. The width of the etching groove in the middle of the electrode can be 20-100 μm, and the number of the etching grooves can be one or more. The protective layer can be made of any one of high-temperature resistant and damp-heat resistant epoxy resin, silicone resin and phenolic resin. The terminal is formed by sputtering a metal layer on the end of the substrate and then electroplating and coating a nickel layer and a tin layer.
The granularity D50 of insulating isolation powder particles in the electrostatic material is larger than that of conductive metal powder particles, so that perfect accumulation is formed by filling the spherical conductive metal powder particles with the spherical insulating isolation powder particles, and metal particle-insulating particle-metal particle units are formed in electrode grooves with limited width as much as possible, so that the service life of electrostatic impact resistance of the product is prolonged. Preferably, the insulating isolation powder can be spherical silicon dioxide powder with D50 of 1.0-4.0 μm and a relative dielectric constant of 3.88 under 1 MHZ; the spherical silicon dioxide powder with the relative dielectric constant of 3.88 at 1MHZ is used as an insulating and isolating material, so that the capacitance of a unit of metal particles, insulating particles and metal particles is reduced, and the capacitance of the whole product is reduced. The conductive metal powder can be spherical nickel powder or silver powder or aluminum powder with the particle size D50 of 0.2-1.0 mu m. The insulating coating material can be phenolic resin or epoxy resin or silicon resin with low dielectric constant, which can ensure that the electrostatic material can be attached to the substrate after being printed and cured, can also ensure that the insulating isolation powder particles and the conductive metal powder particles are completely wrapped and the relative positions of the insulating isolation powder particles and the conductive metal powder particles are fixed, and simultaneously ensures that the static electricity carries out point discharge between the conductive metal powder particles to release energy, thereby realizing the electrostatic protection function. The solvent is a mixture of terpineol and ethylene glycol butyl ether, wherein the terpineol accounts for 20-40% of the total mass of the solvent, and the ethylene glycol butyl ether accounts for 40-80% of the total mass of the solvent; the dispersing agent is soybean lecithin with longer solvent chain and strong adsorption capacity.
The static material of the static suppressor is formed by adopting conductive metal powder, isolation insulating powder, an insulating coating material, a dispersing agent and a solvent according to a certain proportion, and when the static suppressor is in a normal state (without ESD), metal conductive particles are separated by the insulating material and are in a high-resistance state of G omega level; under the condition of transient static electricity, the point discharge between adjacent metal conductive particles is conducted instantly when the breakdown voltage of the insulating material is reached, the on-resistance is very small, large current is allowed to pass, the current generated by the loop is discharged to the ground, and the voltage is clamped to a low value, so that the element is protected.
The invention also provides a preparation method of the ultralow capacitance electrostatic suppressor, which comprises the following steps:
1. the preparation method of the electrostatic material comprises the following specific steps:
primary pulping: uniformly mixing insulating isolation powder, a solvent and a dispersing agent, and performing ball milling for 1 hour to prepare slurry, wherein the isolation powder accounts for 49-70 parts of the total mass of the primary slurry; the solvent accounts for 29-50 parts of the total mass of the primary slurry; the dispersant accounts for 0.1-1 part of the total mass of the primary slurry;
secondary pulping: and taking 100 parts of the mixed primary slurry, sequentially adding 10-30 parts of insulating coating materials and 40-70 parts of conductive metal powder into the slurry, uniformly mixing, rolling and grinding to prepare the slurry with the viscosity of 2-6 ten thousand Pa.S for boxing so as to facilitate subsequent printing.
2. Electrode fabrication
The method comprises the following steps of (1) drying a substrate for 20 minutes in a box type furnace at 150 ℃ by using screen printing metal slurry (such as conductive slurry of silver paste, aluminum paste and the like) or conductive adhesive on the substrate, and then sintering and molding at the maximum temperature of about 850 ℃ for 15-20 minutes; if the conductive adhesive is selected, the conductive adhesive can be directly dried and formed in an oven at 150 ℃.
3. Electrode etching
Etching the electrode formed in the step 2 by using laser to form one or more grooves, wherein the width of each groove is 20-100 microns;
4. filling electrostatic material
And (3) filling the electrostatic material prepared in the step (1) in all grooves of the electrode in the step (3) by using screen printing, completely filling and filling the electrostatic material in gaps of the electrode, drying in a 120 ℃ drying oven for 12 hours, and drying in a 150 ℃ drying oven for 1 hour for curing and forming.
5. Fabrication of protective layer
Using screen printing high temperature and humidity resistant epoxy resin or silicone resin, phenolic resin on the substrate, curing and molding in a 120 ℃ oven for 1 hour to form protection of the electrode and the electrostatic material,
6. slitting, grading and end manufacturing
After the five steps are completed, the substrate is subjected to stripping, sputtering and classification to form chips meeting the size specification, and then the chips are electroplated on the end heads to be plated with nickel and tin, so that a finished product is finally formed. The thickness of the nickel layer is 1 to 3 μm, and the thickness of the tin layer is 4 to 8 μm.
By adopting the method, five groups of antistatic materials are prepared, the primary mixed slurry is prepared, and the mass ratio of the used raw materials is shown in table 1:
TABLE 1 quality ratio table of each raw material in primary mixed slurry
And preparing the antistatic material by using the prepared primary mixed slurry, wherein the mass ratio of the used raw materials is shown in Table 2:
TABLE 2 quality ratio table of raw materials in antistatic material
The materials are prepared according to the table, the electrostatic material slurry is prepared by the method, the capacitance of the ultralow capacitance electrostatic suppressor prepared based on the slurry can reach 0.03-0.05 pF (the capacitance obtained by five groups of experiments of L1-L5 is 0.03pF, 0.04pF, 0.05pF and 0.04pF respectively), and the ESD protection level can reach IEC61000-4-2 standard level 4, namely 8kV of contact discharge and 15kV of air discharge. The product can withstand more than 1000 standard electrostatic impacts without failure.
The technical means disclosed in the invention scheme are not limited to the technical means disclosed in the above embodiments, but also include the technical scheme formed by any combination of the above technical features. It should be noted that those skilled in the art can make various improvements and modifications without departing from the principle of the present invention, and such improvements and modifications are also considered to be within the scope of the present invention.
Claims (9)
1. An ultra-low capacitance electrostatic suppressor, characterized by: the electrostatic protection device comprises a substrate, strip electrodes arranged on the surface of the substrate, grooves formed in the electrodes, an electrostatic material filled in the grooves, a protective layer covering the surfaces of the electrodes and the electrostatic material, and two terminals respectively arranged on two sides of the substrate, wherein at least two grooves which are connected in series are formed in one strip electrode, and the electrostatic material comprises the following components in parts by mass: 100 parts of primary slurry, 40-70 parts of conductive metal powder and 10-30 parts of insulating coating material, wherein the primary slurry comprises insulating isolation powder, a solvent and a dispersing agent, and the mass ratio of the insulating isolation powder is as follows: solvent: the dispersant is (49-70), (29-50) and (0.1-1).
2. The ultra-low capacitance electrostatic suppressor of claim 1 wherein: the insulating isolation powder particles are larger than the conductive metal powder particles.
3. The ultra-low capacitance electrostatic suppressor of claim 2, wherein: the insulating isolation powder is spherical silicon dioxide powder with D50 of 1.0-4.0 mu m and a relative dielectric constant of 3.88 at 1 MHZ; the conductive metal powder is spherical nickel powder or silver powder or aluminum powder with the particle size D50 of 0.2-1.0 mu m.
4. The ultra-low capacitance electrostatic suppressor of claim 1 wherein: the insulating coating material is phenolic resin, epoxy resin or silicon resin.
5. The ultra-low capacitance electrostatic suppressor of claim 1 wherein: the solvent is a mixture of terpineol and ethylene glycol butyl ether; the dispersant is soybean lecithin.
6. A preparation method of an ultra-low capacitance electrostatic suppressor is characterized by comprising the following steps:
step 1, preparing an electrostatic material, which comprises the following specific steps:
primary pulping: uniformly mixing insulating isolation powder, a solvent and a dispersing agent, and performing ball milling for 1 hour to prepare slurry, wherein the isolation powder accounts for 49-70 parts of the total mass of the primary slurry; the solvent accounts for 29-50 parts of the total mass of the primary slurry; the dispersant accounts for 0.1-1 part of the total mass of the primary slurry;
secondary pulping: taking 100 parts of the mixed slurry, sequentially adding 10-30 parts of insulating coating materials and 40-70 parts of conductive metal powder into the slurry, uniformly mixing, rolling and grinding to prepare the slurry with the viscosity of 2-6 ten thousand Pa.S for boxing so as to facilitate subsequent printing;
step 2, electrode fabrication
The method comprises the steps of using screen printing metal slurry or conductive adhesive on a substrate, drying for 20 minutes in a 150 ℃ box type furnace, and then sintering and molding at the maximum temperature of 850 ℃ for 15-20 minutes; when the conductive adhesive is selected, the conductive adhesive is directly dried and formed in an oven at 150 ℃;
step 3, electrode etching
Etching the electrode formed in the step 2 by using laser to form at least one groove, wherein the width of the groove is 20-100 micrometers;
step 4, filling the electrostatic material
Filling the electrostatic material prepared in the step 1 in all grooves formed on the electrode in the step 3 by using screen printing, drying in a 120 ℃ drying oven for 12 hours, and drying in a 150 ℃ drying oven for 1 hour for curing and forming;
step 5, manufacturing a protective layer
Screen printing epoxy resin or silicon resin and phenolic resin on a substrate, and then curing and molding in an oven at 120 ℃ for 1 hour;
step 6, slitting, grading and end manufacturing
After the five steps are completed, the substrate is subjected to stripping, sputtering and classification to form chips meeting the size specification, and then the chips are electroplated on the end heads to be plated with nickel and tin, so that a finished product is finally formed.
7. The method of claim 6, wherein the particles of the insulating spacer powder in step 1 are larger than the particles of the conductive metal powder.
8. The method for preparing the electrostatic suppressor of ultra-low capacitance according to claim 7, wherein the insulating spacer powder in step 1 is spherical silica powder with D50 of 1.0-4.0 μm and a relative dielectric constant of 3.88 at 1 MHZ; the conductive metal powder is spherical nickel powder or silver powder or aluminum powder with the particle size D50 of 0.2-1.0 mu m.
9. The method for preparing the electrostatic suppressor of claim 6, wherein the thickness of the nickel layer electroplated in the step 6 is 1-3 μm, and the thickness of the tin layer is 4-8 μm.
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| CN101221847B (en) * | 2007-12-13 | 2011-11-16 | 上海长园维安电子线路保护股份有限公司 | Label type polymer base ESD protection device and manufacturing method thereof |
| CN102741948B (en) * | 2009-11-26 | 2016-05-25 | 釜屋电机株式会社 | Slurry, electrostatic protection parts and manufacture method thereof for electrostatic protection |
| CN104464993B (en) * | 2013-09-12 | 2017-02-08 | 中国振华集团云科电子有限公司 | Method for preparing static-suppressor functional slurry cured at low temperature |
| CN104464992B (en) * | 2013-09-12 | 2017-02-08 | 中国振华集团云科电子有限公司 | Method for preparing functional slurry of chip-type static suppressor |
| CN108337800B (en) * | 2018-02-13 | 2020-04-07 | 南京萨特科技发展有限公司 | Preparation method of static suppressor module |
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