CN1797017A - Breakdown testing structure for capacitor of preventing damage caused by middle and large current of semiconductor device - Google Patents
Breakdown testing structure for capacitor of preventing damage caused by middle and large current of semiconductor device Download PDFInfo
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- CN1797017A CN1797017A CN 200410093468 CN200410093468A CN1797017A CN 1797017 A CN1797017 A CN 1797017A CN 200410093468 CN200410093468 CN 200410093468 CN 200410093468 A CN200410093468 A CN 200410093468A CN 1797017 A CN1797017 A CN 1797017A
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Abstract
The invention is a capacitor breakdown testing structure for preventing heavy current damage in a semiconductor, comprising: a capacitor (C), and a testing power supply (SMU1) connected across (or in parallel with) the capacitor (C), and characterized in also comprising a voltage dividing resistor (R) connected in series between the anode plate of the capacitor (C) and the testing power supply (SMU1); and the capacitor (C), the voltage dividing resistor (R) and the testing power supply (SMU1) are connected in series to compose a testing circuit.
Description
Technical field
The present invention relates to a kind of test structure of semiconductor devices, particularly prevent the test structure of the big electrical injuries of semiconducter device testing.
Background technology
Be the capacitor breakdown test structure of medium with gate oxidation silicon in the semiconductor devices, comprise with gate oxidation silicon being the capacitor and the testing power supply that is connected across on the capacitor of medium, in the capacitor breakdown test, when the gate oxidation silicon dielectric breakdown of capacitor, two electric pole short circuits that are equivalent to capacitor (C), thereby can produce very big electric current in the moment that punctures, but, tester table can't in time limit big electric current, cause test probe to damage, and the big electric current that occurs during puncture can burn the metal electrode connecting line of capacitor arrangement.
Figure 1A is existing capacitor breakdown test structure synoptic diagram.Figure 1B is the existing preceding equivalent circuit diagram of gate oxidation silicon dielectric breakdown that prevents big electrical injuries capacitor in the semiconductor devices.Fig. 1 C is the existing equivalent circuit diagram of capacitor breakdown test structure when short circuit that prevents big electrical injuries in the semiconductor devices.See from Figure 1A and Fig. 1 C, when the gate oxidation silicon dielectric layer of capacitor (C) is breakdown, be added to the negative electrode and the anode in short circuit of the testing power supply on capacitor (C) the puncture test structure, produce instantaneous big breakdown current, instantaneous big breakdown current burns the metal electrode connecting line of capacitor (C), damages the test probe of tester table.Instantaneously hit the definite position that the shown existing capacitor breakdown test structure that prevents big electrical injuries in the semiconductor devices be can not determine capacitor breakdown greatly.Transient high-current board during capacitor breakdown can not detect, and board will judge that capacitor does not puncture, and continues to apply voltage and tests.Because the metal connecting line of capacitor burns, cause measurement circuit to disconnect, board can only detect little electric current, will increase voltage to voltage limiting value always, can't obtain actual voltage breakdown.Simultaneously, because the metal connecting line of capacitor burns, can't carry out failure analysis, can't judge whether the gate oxidation silicon dielectric layer punctures when the metal connecting line of capacitor burns, can not determine that it is because the transient high-current short-circuit test that cause or that can not continue capacitor (C) that the gate oxidation silicon dielectric breakdown of capacitor (C) produces that the metal connecting line burns.
Can not definitely determine the shortcoming of the damage position of capacitor in order to overcome capacitor testing structure in the conventional semiconductor device, propose the present invention.
Summary of the invention
The objective of the invention is, propose a kind of new capacitor breakdown test structure that prevents big electrical injuries in the semiconductor devices.
The capacitor breakdown test structure that prevents big electrical injuries in the semiconductor devices according to a technical scheme of the present invention, comprise: capacitor (C), the testing power supply (SMU1) of cross-over connection (perhaps in parallel) on capacitor (C) are connected on the plate of capacitor (C) and the voltage grading resistor (R) between the testing power supply (SMU1); Capacitor (C) and, voltage grading resistor (R) and testing power supply (SMU1) be connected in series and constitute the capacitor breakdown test loop.In the test process, the measuring current (I) in the gate oxidation silicon dielectric breakdown Pretesting loop of capacitor (C) is little, and measuring current is generally less than 1 * 10
-5A, therefore, the voltage drop scope that causes on the voltage grading resistor of connecting in test loop (R) is at 1-10mV, voltage drop on the voltage grading resistor (R) of series connection is very little for the puncture test structure influence of capacitor, when the gate oxidation silicon dielectric breakdown of capacitor (C), two electrodes of capacitor (C) are straight-through, testing power supply voltage (V) all is added on the voltage grading resistor (R), if the puncture test voltage (V) on the capacitor breakdown test structure is 10V, breakdown current (I) scope when so, capacitor (C) punctures in the test loop is 0.01-0.1A.Thereby can not produce big breakdown current (I), and can avoid capacitor (C) metal electrode connecting line to burn, can not damage test probe yet, can determine exactly that simultaneously capacitor (C) damage is that gate oxidation silicon dielectric breakdown by capacitor causes.
According to the capacitor breakdown test structure that prevents big electrical injuries in the semiconductor devices of the present invention, the voltage grading resistor (R) of a series connection that is increased in the test loop is the part formation with silicon active area (AA) in the semiconductor devices or polysilicon (poly) layer, only need existing silicon active area (AA) in the semiconductor devices or polysilicon (poly) layer one one to be connected in the test loop of capacitor (C) as voltage grading resistor (R), just can constitute according to the capacitor breakdown test structure of electrical injuries greatly that prevents in the semiconductor devices of the present invention with the metal connecting line.Therefore, on manufacturing process, do not need to increase additional processing step, only need change existing metal connecting line composition a little.Therefore can not increase production cost.The resistance value scope of voltage grading resistor (R) can be selected 100 ohm to 1000 ohm according to actual gate oxidation silicon dielectric layer thickness.
According to the capacitor breakdown test structure that prevents big electrical injuries in the semiconductor devices of the present invention, increase a series connection voltage grading resistor in the test loop, the capacitor class that capacitor breakdown test structure of the present invention can be used for various semiconductor devices punctures test, comprise ILD (metal interlayer medium)/metal interlevel insulation) puncture test, and the puncture of IMI (metal-insulator-metal type)/PIP (polycrystalline silicon-on-insulator-polysilicon) electric capacity test.
Description of drawings
The following description of carrying out in conjunction with the drawings the present invention may be better understood purpose and advantage of the present invention, accompanying drawing is an ingredient of instructions, accompanying drawing illustrates principle of the present invention and feature with the word segment of instructions, demonstrates the embodiment that represents the principle of the invention and feature in the accompanying drawing.
In the accompanying drawing:
Figure 1A is existing capacitor breakdown test structure synoptic diagram;
Figure 1B is the equivalent circuit diagram of existing capacitor breakdown test structure before puncture;
Fig. 1 C is the equivalent circuit diagram of existing capacitor breakdown test structure when short circuit occurring behind gate oxidation silicon dielectric breakdown;
Fig. 2 A is the capacitor testing structural representation that prevents big electrical injuries in the semiconductor devices according to one embodiment of the invention;
Fig. 2 B is the equivalent circuit diagram of capacitor breakdown test structure before the gate oxidation silicon dielectric breakdown of capacitor that prevents big electrical injuries in the semiconductor devices according to one embodiment of the invention; With
Fig. 2 C is the equivalent circuit diagram when occurring short circuit according to the capacitor breakdown test structure in the semiconductor devices of one embodiment of the invention behind the gate oxidation silicon dielectric breakdown of capacitor.
Embodiment
Below specifically describe the capacitor breakdown test structure that prevents big electrical injuries in the semiconductor devices by of the present invention referring to Fig. 2 A, Fig. 2 B and Fig. 2 C.
Referring to Fig. 2 A, as showing among Fig. 2 A, comprise according to the capacitor breakdown test structure of big electrical injuries in the semiconductor devices that prevents of the present invention: the test loop that a resistors in series (R) that is provided with between the plate of capacitor (C), testing power supply (SMU1) and capacitor C and the testing power supply (SMU1) is connected in series and constitutes.
Fig. 2 B demonstrates the equivalent circuit diagram of capacitor breakdown test structure before the gate oxidation silicon dielectric breakdown of capacitor that prevents big electrical injuries in the semiconductor devices according to of the present invention.See from figure B, a voltage grading resistor (R), the voltage V on the voltage grading resistor (R) are set between the plate of capacitor and the testing power supply in the test loop
REqual leakage current I
LeakWith the product of the resistance value R of voltage grading resistor (R), according to Ohm law promptly, V
R=I
Leak* R.The resistance value R scope of voltage grading resistor (R) is 100 ohm to 1000 ohm, uses the resistance value R of different voltage grading resistors (R) according to voltage breakdown.Leakage current I
LeakCurrent value be I
Leak＜＜1 * 10
-5So A is V
R＜＜10mv.
Fig. 2 C is the equivalent circuit diagram of the capacitor breakdown test structure that prevents the big electrical injuries in the semiconductor devices according to one embodiment of the invention when short circuit occurring behind the gate oxidation silicon dielectric breakdown of capacitor.Referring to Fig. 2 C, see from Fig. 2 C, behind the gate oxidation silicon dielectric breakdown of capacitor (C), two pole plates of capacitor (C) are straight-through, become the metal connecting line, therefore, testing power supply (SMU1) is connected with voltage grading resistor (R), electric current in the test loop (I) equals the resistance value R resulting merchant of testing power supply voltage (V) divided by voltage grading resistor (R), according to Ohm law, i.e. and I=V/R.If test voltage (V) is less than 10V, the resistance value R of voltage grading resistor (R) is 100 ohm, and the test loop electric current I is less than being 0.1A, I＜10V/100=0.1A so.
See that from Fig. 2 C behind the gate oxidation silicon dielectric breakdown of capacitor (C), test voltage (V) all is added on the voltage grading resistor (R), big breakdown current can not occur, thereby can not burn the metal connecting line, can not damage test probe.Owing to can not burn connecting line, be that the gate oxidation silicon dielectric breakdown of capacitor causes so can determine the capacitor damage.
More than describe the capacitor breakdown test structure that prevents the big electrical injuries in the semiconductor devices of the present invention in detail.But the invention is not restricted to detailed description herein.The technician of the industry should be appreciated that, implements with other form.Therefore, by whole technical schemes of the present invention, cited embodiment just is used to illustrate the present invention rather than restriction the present invention, and the present invention is not limited to the details of describing herein.The scope of protection of present invention is defined by appending claims.
Claims (4)
1, prevents the capacitor breakdown test structure of the big electrical injuries in the semiconductor devices, comprise: capacitor (C), and the testing power supply (SMU1) of cross-over connection (perhaps in parallel) on capacitor (C), it is characterized in that, also comprise the plate that is connected on capacitor (C) and the voltage grading resistor (R) between the testing power supply (SMU1); Capacitor (C) and voltage grading resistor (R) and testing power supply (SMU1) the formation test loop that is connected in series.
According to the capacitor breakdown test structure of claim 1, it is characterized in that 2, capacitor (C) uses the gate oxidation silicon of semiconductor devices as medium.
According to the capacitor breakdown test structure of claim 1, it is characterized in that 3, voltage grading resistor (R) constitutes with the part of silicon active area in the semiconductor devices or the part of polysilicon layer.
According to the capacitor breakdown test structure of claim 1, it is characterized in that 4, the resistance value R scope of voltage grading resistor (R) is 100 ohm to 1000 ohm, use the resistance value R of different voltage grading resistors (R) according to voltage breakdown.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100934686A CN100405073C (en) | 2004-12-22 | 2004-12-22 | Breakdown testing structure for capacitor of preventing damage caused by middle and large current of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100934686A CN100405073C (en) | 2004-12-22 | 2004-12-22 | Breakdown testing structure for capacitor of preventing damage caused by middle and large current of semiconductor device |
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| Publication Number | Publication Date |
|---|---|
| CN1797017A true CN1797017A (en) | 2006-07-05 |
| CN100405073C CN100405073C (en) | 2008-07-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100934686A Expired - Fee Related CN100405073C (en) | 2004-12-22 | 2004-12-22 | Breakdown testing structure for capacitor of preventing damage caused by middle and large current of semiconductor device |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101387681B (en) * | 2008-11-05 | 2011-04-06 | 南通海立电子有限公司 | Apparatus for detecting recessive breakdown of large-capacity capacitor |
| CN103018500A (en) * | 2012-11-29 | 2013-04-03 | 上海华力微电子有限公司 | Device for preventing probe on semi-automatic probe station from being burnt |
| CN103337468A (en) * | 2013-06-27 | 2013-10-02 | 上海华力微电子有限公司 | Testing structure |
| CN103869111A (en) * | 2014-02-21 | 2014-06-18 | 上海华力微电子有限公司 | Universal needle file and use method thereof |
| CN104142459A (en) * | 2013-05-09 | 2014-11-12 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor detection circuit and method |
| CN106124961A (en) * | 2016-09-19 | 2016-11-16 | 武汉新芯集成电路制造有限公司 | A kind of test structure |
| CN112327120A (en) * | 2021-01-06 | 2021-02-05 | 南京莉上网络科技有限公司 | Capacitor breakdown resistance detection system |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60185174A (en) * | 1984-03-05 | 1985-09-20 | Hitachi Ltd | Evaluation of insulative film |
| JPS6279375A (en) * | 1985-10-02 | 1987-04-11 | Seiko Instr & Electronics Ltd | Evaluation of insulation film |
| JPH0769385B2 (en) * | 1986-05-09 | 1995-07-31 | 沖電気工業株式会社 | Semiconductor device testing method and device |
| JPS63124437A (en) * | 1986-11-14 | 1988-05-27 | Hitachi Ltd | Apparatus for evaluation of insulator thin film for semiconductor element |
| KR100282432B1 (en) * | 1998-08-31 | 2001-02-15 | 김영환 | Time dependent dielectric breakdown test pattern and method for testing tddb of mos capacitor dielectric |
| JP2000269290A (en) * | 1999-03-18 | 2000-09-29 | Toshiba Corp | Test structure and evaluation method using the same |
| CN1588102A (en) * | 2004-08-19 | 2005-03-02 | 信息产业部电子第五研究所 | Breakdown test method for medium relative to time in high temperature constant electric field |
-
2004
- 2004-12-22 CN CNB2004100934686A patent/CN100405073C/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101387681B (en) * | 2008-11-05 | 2011-04-06 | 南通海立电子有限公司 | Apparatus for detecting recessive breakdown of large-capacity capacitor |
| CN103018500A (en) * | 2012-11-29 | 2013-04-03 | 上海华力微电子有限公司 | Device for preventing probe on semi-automatic probe station from being burnt |
| CN104142459A (en) * | 2013-05-09 | 2014-11-12 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor detection circuit and method |
| CN103337468A (en) * | 2013-06-27 | 2013-10-02 | 上海华力微电子有限公司 | Testing structure |
| CN103869111A (en) * | 2014-02-21 | 2014-06-18 | 上海华力微电子有限公司 | Universal needle file and use method thereof |
| CN103869111B (en) * | 2014-02-21 | 2016-08-17 | 上海华力微电子有限公司 | A kind of universal needle stand and using method thereof |
| CN106124961A (en) * | 2016-09-19 | 2016-11-16 | 武汉新芯集成电路制造有限公司 | A kind of test structure |
| CN112327120A (en) * | 2021-01-06 | 2021-02-05 | 南京莉上网络科技有限公司 | Capacitor breakdown resistance detection system |
| CN112327120B (en) * | 2021-01-06 | 2021-07-23 | 乐清海创智能科技有限公司 | Capacitor breakdown resistance detection system |
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| Publication number | Publication date |
|---|---|
| CN100405073C (en) | 2008-07-23 |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20111205 |
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Effective date of registration: 20111205 Address after: 201203 Shanghai Zhangjiang Road, Zhangjiang High Tech Park of Pudong New Area No. 18 Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai Zhangjiang Road, Zhangjiang High Tech Park of Pudong New Area No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
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Granted publication date: 20080723 Termination date: 20181222 |
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| CF01 | Termination of patent right due to non-payment of annual fee |