CN1794461A - Cmos图像传感器及其制造方法 - Google Patents
Cmos图像传感器及其制造方法 Download PDFInfo
- Publication number
- CN1794461A CN1794461A CNA2005101328283A CN200510132828A CN1794461A CN 1794461 A CN1794461 A CN 1794461A CN A2005101328283 A CNA2005101328283 A CN A2005101328283A CN 200510132828 A CN200510132828 A CN 200510132828A CN 1794461 A CN1794461 A CN 1794461A
- Authority
- CN
- China
- Prior art keywords
- transfer gate
- semiconductor substrate
- image sensor
- cmos image
- photodiode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 239000004065 semiconductor Substances 0.000 claims abstract description 40
- 238000002955 isolation Methods 0.000 claims abstract description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 238000000059 patterning Methods 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
本发明公开了一种CMOS图像传感器及其制造方法,其形成沟槽形状的转移栅,用于更好地传输由入射到光电二极管的光产生的电子,以获得改善的传输特性。该CMOS图像传感器包括:半导体衬底,具有由浅沟槽隔离区限定的至少一个有源区;光接收区,形成在半导体衬底的表面;以及转移栅,掩埋在光接收区与至少一个有源区之间的半导体衬底中,转移栅具有预定深度的构槽形状。
Description
本申请要求于2004年12月23日提交的韩国专利申请第10-2004-0111470号的权利,其全部内容结合于此作为参考。
技术领域
本发明涉及一种互补金属氧化物半导体(CMOS)图像传感器,更具体地说,涉及一种CMOS图像传感器及其制造方法,其采用便于由入射到光电二极管的光产生的电子的传输的沟槽形状的转移栅。
背景技术
图像传感器是把光学图像转换成电信号的半导体装置,可分成CMOS图像传感器或电荷耦合器件,其包括多个相互邻近设置的金属-氧化物-硅(MOS)电容器,其中,载荷子存储于电容器中并被传输至电容器。另一方面,CMOS图像传感器采用CMOS技术,并采用控制电路和信号处理电路作为外围电路,包括一种转换模式,这种转换模式使用与排列在半导体(硅)衬底上的单位像素数目对应的多个MOS晶体管,顺序检测单位像素的输出。
CMOS图像传感器包括用于感应光的光感应区(例如,光电二极管)和用于将感应到的光处理成电信号的逻辑电路区。入射到光电二极管的光产生电子-空穴对,其中,空穴被吸引到半导体衬底中,并且电子积聚在光电二极管中。在由导电材料层(通常使其图案化,以被沉积在半导体衬底表面上的光电二极管附近)形成的栅的控制下,积聚的电子选择性地开启上述MOS晶体管之一。光电二极管通过使用基于栅结构形成的掩模的离子注入处理而形成在半导体衬底中。
然而,由于离子注入处理的光掩模处理固有的不准确性,栅通常部分暴露,以使离子也通过栅的暴露部分被注入硅衬底。因此,形成在栅以下的沟道区可能受到注入的离子的影响,导致整个阵列的晶体管特性变化,从而降低了产量。
发明内容
因此,本发明的目的在于提供一种CMOS图像传感器及其制造方法,其基本上消除了由于相关技术的限制和缺陷导致的一个或多个问题。
本发明的目的在于提供一种CMOS图像传感器及其制造方法,有助于电子的流动性。
本发明的另一目的在于提供一种CMOS图像传感器及其制造方法,能够获得改善的传输特性。
本发明的另一目的在于提供一种CMOS图像传感器及其制造方法,能够防止用于形成光电二极管的离子注入法(ion-plantationprocess)对沟道区的不利影响。
本发明的另一目的在于提供一种CMOS图像传感器及其制造方法,其提高了整个像素阵列的晶体管的均匀性并提高了产量。
本发明的其它优点、目的和特征将至少部分地在随后的说明书中阐述,通过以下实施例,对于本领域技术人员来说部分将变得明显,或者可以通过实施本发明而了解。本发明的目的和其它优点可以通过在说明书、权利要求、以及附图中所特别指出的结构来实现和达到。
为了实现根据本发明的目的的这些目标和其它优点,如本文中具体实施和概括描述的,提供了一种CMOS图像传感器,包括:半导体衬底,具有由浅沟槽隔离区限定的至少一个有源区;光接收区,形成在半导体衬底的表面;以及转移栅(transfer gate),掩埋在光接收区和至少一个有源区之间的半导体衬底中,转移栅为具有预定深度的沟槽形状。
在本发明的另一方面,提供了一种用于制造CMOS图像传感器的方法。该方法包括:在半导体衬底中形成沟槽;用多晶硅填充沟槽;通过使多晶硅图案化以保持在沟槽中,形成转移栅;使用光掩模处理,通过将N-型离子注入半导体衬底,然后将P-型离子注入光电二极管的表面区域,在转移栅的一侧上形成轻掺杂区作为光电二极管;以及,通过将N+型离子注入半导体衬底,在转移栅的另一侧上形成有源区作为重掺杂区。
应该了解,本发明的以上概括描述和以下详细描述是示范性和说明性的,目的在于提供所要求的本发明的进一步的说明。
附图说明
附图提供了对本发明的进一步理解,并且被结合到本申请中构成本申请的一部分,与说明书一起描述本发明,用于说明本发明的原理。在附图中:
图1是根据本发明的CMOS图像传感器的剖视图;以及
图2至图7是示出根据本发明的用于制造CMOS图像传感器的方法的剖视图。
具体实施方式
以下将详细描述本发明的优选实施例,其实例在附图中示出。在所有附图中尽可能使用相同的参考标号表示相同或相似的部件。
CMOS图像传感器被构成为像素阵列,每个像素均由四个晶体管和一个光电二极管的排列组成。
如图1所示,根据本发明的CMOS图像传感器的半导体衬底(硅衬底)100包括光电二极管PD,作为形成在半导体衬底的预定表面中的光接收区。有源区130(最好由多晶硅形成)被掩埋在呈沟槽形状的半导体衬底100中。这样,如果转移栅210被开启,则在半导体衬底100的内部深处形成在沟槽下面从光电二极管PD延伸至有源区130的沟道区140。因此,通过开启转移栅210,在几乎没有损失的情况下,根据入射到光电二极管PD的光学(光)信号产生的积聚电子沿着沟道区140从光电二极管移动到有源区130。这里,光电二极管PD由在表面的P-型区120和在表面下的N-型区110(例如,邻近沟道区140)构成,有源区130是与光电二极管PD隔开预定间隔的N+型区。
图2至图7示出根据本发明的优选实施例的用于制造CMOS图像传感器的方法。
参照图2,在半导体衬底100上形成氮化物膜(未示出)并使其图案化。使用氮化物膜作为掩模,通过蚀刻半导体衬底,在半导体衬底100的硅中形成沟槽101。蚀刻沟槽101,以达到预定深度,从而确定至少等于浅沟槽隔离区的深度的转移栅210的厚度,厚度最好为3000或更厚。
参照图3,在半导体衬底100上沉积多晶硅200层,以填充沟槽101并覆盖由场效氧化膜选择性地形成的浅沟槽隔离区(未示出)。浅沟槽隔离区用于将半导体衬底100划分为多个有源区,从而限定每个有源区130。
参照图4,通过使多晶硅200图案化而形成填充沟槽101的转移栅210。从而,经过图案化的多晶硅层保留在沟槽101的区域中和周围。因为用于移动由光电二极管PD产生的电子的转移栅210形成充分深的沟槽形状,所以不管后续用来形成光电二极管PD的光掩模处理的微小不准确性如何,都有助于电子的移动性,从而获得改善的传输特性。
参照图5,在以上获得的结构上沉积光刻胶(PR)膜,并图案化,以形成覆盖转移栅210的一部分(一侧)的光刻胶图案50,从而暴露半导体衬底100的另一侧和邻近区域。光刻胶图案50用于在后续光掩模处理中遮蔽转移栅210以形成光电二极管PD。这样,使用光刻胶图案50作为掩模,N-型离子被注入半导体衬底100的暴露区,以形成轻掺杂区110。
从而,即使发生了光掩蔽不准确,使得在离子注入过程中转移栅210被部分暴露,但因为转移栅具有掩埋在衬底中的沟槽形状,由于用于形成转移栅210的沟槽101(很厚地形成以具有至少3000的深度)足够深,所以在转移栅下的沟道区140中不会发生离子注入。因此,即使由于光刻胶图案50的不准确形成而导致转移栅210部分暴露,也不会对沟道区140产生损害或负面影响。
参照图6,使用光刻胶图案50作为掩模,P-型离子被注入半导体衬底100的暴露区,以在N-型区110上形成朝向表面的P-型区120。这样,完成了由P-型区120和N-型区110组成的光电二极管PD。
参照图7,在去除光刻胶图案50后,使用另一掩模以在转移栅210的另一侧(即,在沟槽101的另一侧)上形成有源区130,作为源极或漏极。这样,N+型离子被注入半导体衬底100的非掩模区以形成重掺杂区。
通过采用上述根据本发明的CMOS图像传感器及其制造方法,由于用于使通过入射到光电二极管的光产生的电子移动的转移栅形成为沟槽形状,因而改善了传输特性。此外,由于沟槽形状的转移栅,转移栅的沟道区在半导体衬底的内部形成了足够的深度转移栅,因而减小了由表面电荷和表面损害导致的漏电流。而且,由于光电二极管的轻掺杂离子注入层与沟道区隔离,因而能够消除轻掺杂离子注入层与沟道区之间的耗尽区的寄生电容,从而提高了晶体管的速度。
以上所述仅为本发明的优选实施例而已,并不用于限制本发明,对于本领域的技术人员来说,本发明可以有各种更改和变化。凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (14)
1.一种CMOS图像传感器,包括:
半导体衬底,具有由浅沟槽隔离区限定的至少一个有源区;
光接收区,形成在所述半导体衬底的表面中;以及
转移栅,被掩埋在所述光接收区与所述至少一个有源区之间的所述半导体衬底中,所述转移栅具有预定深度的沟槽形状。
2.根据权利要求1所述的CMOS图像传感器,其中,所述转移栅由多晶硅形成。
3.根据权利要求1所述的CMOS图像传感器,其中,所述光接收区是光电二极管。
4.根据权利要求1所述的CMOS图像传感器,其中,所述转移栅的预定深度至少等于所述浅沟槽隔离区的深度。
5.根据权利要求1所述的CMOS图像传感器,其中,所述转移栅的预定深度不小于3000。
6.根据权利要求1所述的CMOS图像传感器,其中,所述光接收区离所述至少一个有源区预定间隔设置。
7.根据权利要求1所述的CMOS图像传感器,其中,所述有源区(130)是N+区,所述光接收区是由位于所述半导体衬底的表面的P-型区和形成在所述P-型区下方的N-型区构成的光电二极管,并且其中,所述N-型区邻近从所述光电二极管延伸至所述至少一个有源区的沟道区。
8.一种用于制造CMOS图像传感器的方法,包括:
在半导体衬底中形成沟槽;
用多晶硅填充所述沟槽;
通过图案化所述多晶硅以保持在所述沟槽中来形成转移栅;
使用光掩模处理,通过将N-型离子注入所述半导体衬底、然后将P-型离子注入所述光电二极管的表面区域,在所述转移栅的一侧上形成轻参杂区作为光电二极管;
通过将N+型离子注入所述半导体衬底,在所述转移栅的另一侧上形成有源区作为重掺杂区。
9.根据权利要求8所述的方法,其中,所述光掩模处理包括:
根据所述转移栅和有源区的形成,通过在包括图案化的多晶硅的半导体衬底上沉积光刻胶膜和图案化所述光刻胶膜,形成光刻胶图案。
10.根据权利要求9所述的方法,其中,所述轻掺杂区的形成通过使用所述光刻胶图案作为掩模来执行。
11.一种用于制造CMOS图像传感器的方法,包括:
通过浅沟槽隔离区在半导体衬底中限定至少一个有源区;
在所述半导体衬底的表面形成光接收区;以及
将转移栅掩埋在所述光接收区和所述至少一个有源区之间的所述半导体衬底中,所述转移栅具有预定深度的沟槽形状。
12.根据权利要求11所述的方法,其中,所述沟槽的形成确定了所述转移栅的预定厚度。
13.根据权利要求12所述的方法,其中,所述预定厚度至少等于所述浅沟槽隔离区的深度。
14.根据权利要求12所述的方法,其中,所述预定厚度不小于3000。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040111470 | 2004-12-23 | ||
KR1020040111470A KR100658925B1 (ko) | 2004-12-23 | 2004-12-23 | Cmos 이미지 센서 및 그 제조 방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1794461A true CN1794461A (zh) | 2006-06-28 |
Family
ID=36610402
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2005101328283A Pending CN1794461A (zh) | 2004-12-23 | 2005-12-22 | Cmos图像传感器及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20060138486A1 (zh) |
KR (1) | KR100658925B1 (zh) |
CN (1) | CN1794461A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110491891A (zh) * | 2019-07-23 | 2019-11-22 | 德淮半导体有限公司 | Cmos图像传感器的像素结构及其形成方法 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100884976B1 (ko) * | 2006-12-29 | 2009-02-23 | 동부일렉트로닉스 주식회사 | 이미지 센서의 제조 방법 |
US7768047B2 (en) * | 2007-05-10 | 2010-08-03 | Micron Technology, Inc. | Imager element, device and system with recessed transfer gate |
KR100959442B1 (ko) * | 2007-12-26 | 2010-05-25 | 주식회사 동부하이텍 | 이미지 센서 및 그 제조방법 |
US7781718B2 (en) * | 2008-05-30 | 2010-08-24 | Omnivision Technologies, Inc. | Globally reset image sensor pixels |
US8089036B2 (en) * | 2009-04-30 | 2012-01-03 | Omnivision Technologies, Inc. | Image sensor with global shutter and in pixel storage transistor |
US8658956B2 (en) * | 2009-10-20 | 2014-02-25 | Omnivision Technologies, Inc. | Trench transfer gate for increased pixel fill factor |
US8637910B2 (en) | 2009-11-06 | 2014-01-28 | Samsung Electronics Co., Ltd. | Image sensor |
JP5537523B2 (ja) * | 2011-09-22 | 2014-07-02 | 株式会社東芝 | 固体撮像装置 |
KR101968197B1 (ko) | 2012-05-18 | 2019-04-12 | 삼성전자주식회사 | 이미지 센서 및 이의 형성 방법 |
KR102087233B1 (ko) | 2013-01-17 | 2020-03-10 | 삼성전자주식회사 | 수직 구조 전송 게이트 전극을 갖는 시모스 이미지 센서 및 제조방법 |
JP2014199898A (ja) * | 2013-03-11 | 2014-10-23 | ソニー株式会社 | 固体撮像素子および製造方法、並びに、電子機器 |
KR102433575B1 (ko) | 2015-10-12 | 2022-08-19 | 삼성전자주식회사 | 이미지 센서 |
US11527563B2 (en) | 2020-04-20 | 2022-12-13 | Taiwan Semiconductor Manufacturing Company Limited | Photodetector using a buried gate electrode for a transfer transistor and methods of manufacturing the same |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100289371B1 (ko) * | 1998-04-10 | 2001-06-01 | 김영환 | 고체촬상소자의제조방법 |
KR20020045165A (ko) * | 2000-12-08 | 2002-06-19 | 박종섭 | 전자운송 효율을 향상시킬 수 있는 이미지 센서 및 그제조 방법 |
KR100748323B1 (ko) * | 2001-06-26 | 2007-08-09 | 매그나칩 반도체 유한회사 | 이미지센서 제조 방법 |
US7187018B2 (en) * | 2003-06-25 | 2007-03-06 | Micron Technology, Inc. | Reduced barrier photodiode/transfer gate device structure of high efficiency charge transfer and reduced lag and method of formation |
KR100558530B1 (ko) * | 2003-09-23 | 2006-03-10 | 동부아남반도체 주식회사 | 씨모스 이미지 센서 및 그 제조 방법 |
US7217968B2 (en) * | 2004-12-15 | 2007-05-15 | International Business Machines Corporation | Recessed gate for an image sensor |
-
2004
- 2004-12-23 KR KR1020040111470A patent/KR100658925B1/ko not_active IP Right Cessation
-
2005
- 2005-12-22 CN CNA2005101328283A patent/CN1794461A/zh active Pending
- 2005-12-23 US US11/315,149 patent/US20060138486A1/en not_active Abandoned
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110491891A (zh) * | 2019-07-23 | 2019-11-22 | 德淮半导体有限公司 | Cmos图像传感器的像素结构及其形成方法 |
Also Published As
Publication number | Publication date |
---|---|
KR100658925B1 (ko) | 2006-12-15 |
US20060138486A1 (en) | 2006-06-29 |
KR20060072749A (ko) | 2006-06-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1794461A (zh) | Cmos图像传感器及其制造方法 | |
KR100416821B1 (ko) | 고체촬상소자, 그 구동방법 및 고체촬상장치 | |
EP2282345B1 (en) | Imaging sensor with transfer gate having multiple channel sub-regions | |
US6486521B2 (en) | Optimized floating P+ region photodiode for a CMOS image sensor | |
US7541210B2 (en) | Method for fabricating CMOS image sensor | |
US20070012966A1 (en) | Image Sensors and Methods of Fabricating Same | |
KR100450670B1 (ko) | 포토 다이오드를 갖는 이미지 센서 및 그 제조방법 | |
US7955924B2 (en) | Image sensor and method of manufacturing the same | |
CN101192570B (zh) | Cmos图像传感器 | |
TW202203445A (zh) | 增加有效通道寬度之電晶體 | |
US20100084695A1 (en) | Method of fabricating cmos image sensor | |
CN113451340A (zh) | 具有增加的有效沟道宽度的晶体管 | |
US7615838B2 (en) | CMOS image sensor and method for manufacturing the same | |
CN100428487C (zh) | Cmos图像传感器的光电二极管及其制造方法 | |
US20080035969A1 (en) | CMOS image sensors and methods of forming the same | |
CN110021614B (zh) | 用于经增强图像传感器性能的源极跟随器装置 | |
US8013365B2 (en) | CMOS image sensor configured to provide reduced leakage current | |
KR100388459B1 (ko) | 포토다이오드 영역에 트렌치를 구비하는 이미지 센서 및그 제조 방법 | |
KR20030001116A (ko) | 이미지센서 및 그 제조 방법 | |
KR100788483B1 (ko) | 이미지 센서의 픽셀 구조 및 그 제조 방법 | |
US20220278148A1 (en) | Tilted transfer gate for advanced cmos image sensor | |
JP2003318383A (ja) | 固体撮像素子およびその製造方法 | |
US20230307474A1 (en) | Dual depth junction structures and process methods | |
US10388688B2 (en) | Method of forming a shallow pinned photodiode | |
KR0155789B1 (ko) | 고체촬상장치의 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20060628 |