CN1794441A - Manufacturable cowp metal cap process for copper interconnects - Google Patents
Manufacturable cowp metal cap process for copper interconnects Download PDFInfo
- Publication number
- CN1794441A CN1794441A CN200510105104.XA CN200510105104A CN1794441A CN 1794441 A CN1794441 A CN 1794441A CN 200510105104 A CN200510105104 A CN 200510105104A CN 1794441 A CN1794441 A CN 1794441A
- Authority
- CN
- China
- Prior art keywords
- palladium
- chloride
- copper
- solution
- acetic acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 88
- 239000010949 copper Substances 0.000 title claims abstract description 88
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 87
- 238000000034 method Methods 0.000 title claims abstract description 66
- 230000008569 process Effects 0.000 title claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 title description 11
- 239000002184 metal Substances 0.000 title description 11
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 170
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims abstract description 144
- 238000010899 nucleation Methods 0.000 claims abstract description 79
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 60
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims abstract description 34
- 238000007747 plating Methods 0.000 claims abstract description 18
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 11
- 239000010941 cobalt Substances 0.000 claims abstract description 11
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 11
- 239000010937 tungsten Substances 0.000 claims abstract description 11
- 239000000243 solution Substances 0.000 claims description 62
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 49
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 31
- 239000013078 crystal Substances 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 22
- 238000007772 electroless plating Methods 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 17
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 16
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 15
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims description 14
- 239000007864 aqueous solution Substances 0.000 claims description 14
- 230000008021 deposition Effects 0.000 claims description 13
- 235000006408 oxalic acid Nutrition 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 10
- 229910052698 phosphorus Inorganic materials 0.000 claims description 10
- 239000011574 phosphorus Substances 0.000 claims description 10
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 8
- 229960001484 edetic acid Drugs 0.000 claims description 8
- 239000011780 sodium chloride Substances 0.000 claims description 8
- 235000002639 sodium chloride Nutrition 0.000 claims description 8
- 235000019270 ammonium chloride Nutrition 0.000 claims description 7
- 239000008139 complexing agent Substances 0.000 claims description 7
- 239000001103 potassium chloride Substances 0.000 claims description 7
- 235000011164 potassium chloride Nutrition 0.000 claims description 7
- CEYULKASIQJZGP-UHFFFAOYSA-L disodium;2-(carboxymethyl)-2-hydroxybutanedioate Chemical compound [Na+].[Na+].[O-]C(=O)CC(O)(C(=O)O)CC([O-])=O CEYULKASIQJZGP-UHFFFAOYSA-L 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- MUJIDPITZJWBSW-UHFFFAOYSA-N palladium(2+) Chemical compound [Pd+2] MUJIDPITZJWBSW-UHFFFAOYSA-N 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 2
- 235000011167 hydrochloric acid Nutrition 0.000 claims 6
- 238000005406 washing Methods 0.000 claims 6
- 239000011148 porous material Substances 0.000 claims 3
- 150000002500 ions Chemical class 0.000 abstract description 7
- 229910045601 alloy Inorganic materials 0.000 abstract description 2
- 239000000956 alloy Substances 0.000 abstract description 2
- 230000000536 complexating effect Effects 0.000 abstract 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 abstract 1
- YJVFFLUZDVXJQI-UHFFFAOYSA-L palladium(ii) acetate Chemical compound [Pd+2].CC([O-])=O.CC([O-])=O YJVFFLUZDVXJQI-UHFFFAOYSA-L 0.000 abstract 1
- 239000000463 material Substances 0.000 description 9
- 239000007787 solid Substances 0.000 description 6
- 238000005507 spraying Methods 0.000 description 6
- 101150003085 Pdcl gene Proteins 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000084 colloidal system Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- PYRZPBDTPRQYKG-UHFFFAOYSA-N cyclopentene-1-carboxylic acid Chemical compound OC(=O)C1=CCCC1 PYRZPBDTPRQYKG-UHFFFAOYSA-N 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- WETWJCDKMRHUPV-UHFFFAOYSA-N acetyl chloride Chemical compound CC(Cl)=O WETWJCDKMRHUPV-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- KTVIXTQDYHMGHF-UHFFFAOYSA-L cobalt(2+) sulfate Chemical compound [Co+2].[O-]S([O-])(=O)=O KTVIXTQDYHMGHF-UHFFFAOYSA-L 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 229960004643 cupric oxide Drugs 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 235000013569 fruit product Nutrition 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1229—Composition of the substrate
- C23C18/1241—Metallic substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
- C23C18/1608—Process or apparatus coating on selected surface areas by direct patterning from pretreatment step, i.e. selective pre-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
- C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
- C23C18/1837—Multistep pretreatment
- C23C18/1844—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/48—Coating with alloys
- C23C18/50—Coating with alloys with alloys based on iron, cobalt or nickel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76874—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroless plating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/0716—Metallic plating catalysts, e.g. for direct electroplating of through holes; Sensitising or activating metallic plating catalysts
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/072—Electroless plating, e.g. finish plating or initial plating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Thermal Sciences (AREA)
- Chemically Coating (AREA)
Abstract
A method to electrolessly plate a CoWP alloy on copper in a reproducible manner that is effective for a manufacturable process. In the method, a seed layer of palladium (Pd) is deposited on the copper by an aqueous seeding solution of palladium acetate, acetic acid and chloride. Thereafter, a complexing solution is applied to remove any Pd ions which are adsorbed on surfaces other than the copper. Finally, a plating solution of cobalt (Co), tungsten (W) and phosphorous (P) is applied to the copper so as to deposit a layer of CoWP on the Pd seed and copper.
Description
Technical field
The present invention relates to be used for the formation of cobalt/tungsten/phosphorus (CoWP) metal cap of copper-connection, more particularly, but relate to the manufacture method that is used on copper-connection, forming CoWP metal cap.
Background technology
By metallization medium layer, the patterned media layer is to form groove, and the groove in the depositing metal layers filled media layer forms the metallization pattern on the integrated circuit then.Typically, metal level is filling groove not only, and covers whole semiconductor wafer.Therefore, adopt chemico-mechanical polishing (CMP) or etch-back method to remove unnecessary metal, so that only keep the metal in the groove.
Along with wiring width in the integrated circuit continue dwindle, the conductivity of wiring material becomes and becomes more and more important.Optional materials of aluminum and other material, for example better conductive copper is compared attraction and is diminished.Except having good conductivity, copper is more deelectric transferred than aluminium, and electromigration is the characteristic that importance increases with the increase of the current density that reduces and apply of cloth cross-sectional area.Because copper has low cost, easily processing, lower electromigration sensitiveness and less resistivity, so copper is counted as the attractive substitute of aluminium.
Copper as wiring material has several important disadvantages.It can rapid diffusion enters and passes the deielectric-coating of silicon substrate and for example silicon dioxide.Diffuse into adjacent areas of dielectric and can cause between two interconnection lines, forming guiding path, produce electrical short.Diffuse into adjacent silicon substrate and can cause junction leakage, thereby destroy device.The adhesive force of copper and dielectric cap is also very poor.Replace aluminium to require to overcome these problems with copper as interconnection material.
For alleviate copper and on cover the sticking problem of dielectric cap, proposed multiple metal cap and come the covering copper interconnection, with improve with on cover the adhesive force of dielectric cap.A kind of such metal cap cover material that has proposed is CoWP.People's such as Dubin United States Patent (USP) 5,695,810, people's such as people's such as Edelstein United States Patent (USP) 6,153,935 and Sambucetti United States Patent (USP) 6,323,128, by quoting here, in conjunction with its disclosure, they all disclose the electroless deposition of CoWP.In people's such as Dubin patent, the CoWP of electroless plating is used as the barrier layer between copper and the medium.People such as Dubin disclose also that sputter palladium (Pd) seed crystal is used to adhere to CoWP on medium, but when CoWP during as the metal cap on copper, depositing seed crystal.
In people's such as Edelstein patent, before the electroless deposition of CoWP, the Pd solution by unexposed component forms the Pd seed crystal on the copper wiring material.By strong complexing agent such as ethylenediamine, citrate, or the aqueous solution of ethylenediamine tetra-acetic acid is removed residual Pd seed crystal (not sticking on the copper).
In people's such as Sambucetti patent, the copper wiring material is through H
2SO
4The Pd solution-treated of unexposed component is used in preliminary treatment subsequently, to cause the deposition of Pd seed crystal, then with comprising at least the natrium citricum of 15g/l or the unnecessary Pd ion of solution removal of ethylenediamine tetra-acetic acid.Use CoWP electroless plating copper wiring material then.
People's such as Babu United States Patent (USP) 4,956,197 by quoting here, in conjunction with its disclosure, discloses electroless plating nickel or copper on dielectric substrate.Dielectric substrate is through NH
3The preliminary treatment of plasma is then with the PdCl that comprises HCl
2The seeding solution-treated.PdCl
2Be the extremely strong seeding solution of a kind of aggressivity, so can not accept for copper-connection of the present invention.
People's such as Akai United States Patent (USP) 4,622,069 by quoting here, in conjunction with its disclosure, discloses electroless plating nickel or copper on ceramic substrate.Before electroless plating, ceramic substrate with organic Pd seeding solution-treated with deposition Pd seed crystal.
Though those skilled in the art has made effort, but still need a kind of manufacture method that is used to copper-connection deposition CoWP cap layer.
Therefore, an object of the present invention is, obtain a kind of can control well and method repeatably, be used to copper-connection deposition CoWP cap layer.
Another object of the present invention is, obtains a kind of method that is used to copper-connection deposition CoWP cap layer, and this method provides durable seed crystal with Pd seeding solution for CoWP making the minimized while of the chemical erosion of copper-connection.
With reference to below to explanation of the present invention after, it is more obvious that these and other objects of the present invention will become.
Summary of the invention
By providing according to a first aspect of the invention, carry out the method for electroless plating on the copper in being included in substrate or on the substrate, reached purpose of the present invention, this method may further comprise the steps:
Palladium, acetic acid and the muriatic seeding aqueous solution are put on described substrate, only on the described copper and not form the palladium inculating crystal layer on the remainder at described substrate;
Complex solution is put on described substrate, to remove the palladium ion that on described substrate, adsorbs; And
With the described copper of plating bath electroless plating that comprises cobalt, tungsten and phosphorus, with deposition one deck cobalt, tungsten and phosphorus on described palladium seed crystal.
According to a second aspect of the invention, provide a kind of method that on copper, deposits inculating crystal layer, may further comprise the steps:
Palladium, acetic acid and the muriatic aqueous solution are put on described copper, only on described copper, to form the palladium inculating crystal layer.
According to a third aspect of the invention we, provide the method for carrying out electroless plating on a kind of copper in being included in semiconductor wafer or on the semiconductor wafer, may further comprise the steps:
Preparation has the semiconductor wafer that copper zone and no copper zone are arranged;
Palladium, acetic acid and the muriatic aqueous solution are put on described semiconductor wafer, only on described no copper zone, not form the palladium inculating crystal layer described have on the copper zone;
Complex solution is put on described semiconductor wafer, to remove the palladium ion that on described no copper zone, adsorbs; And
With the described copper of plating bath electroless plating that comprises cobalt, tungsten and phosphorus, with deposition one deck cobalt, tungsten and phosphorus on described palladium seed crystal.
According to a forth aspect of the invention, provide a kind of seeding solution that is used for depositing Pd seed crystal on copper, this solution comprises palladium, acetic acid and the muriatic aqueous solution.
Description of drawings
Believe that feature of the present invention is novel, in appended claims, at length illustrated essential characteristic of the present invention.Accompanying drawing only is for illustrative purposes, does not draw in proportion.But, the present invention may be better understood tissue and the method for operation of the detailed introduction by with reference to the accompanying drawings itself, wherein:
Fig. 1 is schematically illustrating of copper-connection, shows the preferred embodiments of the present invention.
Fig. 2 shows the figure of the effect of the pneumatic filter that filters colloidal solid from the seeding groove.
Embodiment
In more detail with reference to the accompanying drawings, especially with reference to figure 1, show the typical products and its 10 of the preferred embodiment of the present invention.Goods 10 comprise substrate 12, and preferably Semiconductor substrate most preferably is a semiconductor wafer.Semiconductor wafer can be made of any semi-conducting material such as silicon, SiGe or GaAs etc.Substrate 12 can have circuit and the further feature far with the present invention.Cambium layer 14 on substrate 12, and this layer 14 is insulating barrier preferably, most preferably are the dielectric layers as oxide (for example silicon dioxide).In layer 14, form the groove 16 that holds copper 20.Be used for electronic application as fruit product 10, be necessary between copper 20 and layer (for example medium) 14, to form lining 18.This lining is conventional and can be made of the CoWP alloy, but more generally by the bilayer formation of TaN (tantalum nitride) and Ta (tantalum).At last, goods 10 comprise the CoWP 22 of one deck electroless plating on copper 20.Pd is not shown in Fig. 1, and Pd is generally used for " seeding " copper effectively and equably to deposit CoWP.If lining is arranged, this lining is not usually by seeding or plating.
Other people have proposed with the precursor of Pb seed crystal as the CoWP of electroless plating.Yet, but found that the prior art solutions that other people propose is not suitable in the manufacturing of absolute demand repetition methods.Especially true in the electronics industry of copper wiring very little (present level of existing semiconductor manufacturing is about 90nm).
The inventor has proposed a kind of electroless deposition process, and this method is less to the erosion of copper, and makes and can cause that on no copper surface the colloid of the spuious plating of CoWP minimizes.
According to the present invention, a kind of method that is used in being included in substrate or carries out electroless plating on the copper on the substrate is disclosed.Just, this copper can be in groove, as shown in Figure 1, and also can be simply on the surface of substrate.In most preferred embodiment of the present invention, substrate is a semiconductor wafer.
In the first step of the inventive method, the copper surface is alternatively by prerinse, to remove any residue of handling operation from prime.For example, when substrate was semiconductor wafer, it can pass through chemico-mechanical polishing, and this will residual BTA (BTA) passivation layer.In this case, wish that prerinse copper is to remove BTA or other residue.The inventor has proposed two kinds of prewashed submethods.In first kind of prerinse submethod, goods 10 are heated one period scheduled time (for example, 30 to 120 minutes) and, apply oxalic acid solution to goods 10 subsequently in nitrogen to 100 ℃, be preferably 5 gram (g)/liter (l).Preferred the method when residue that available baking is removed is under the situation if any BTA.In the optional submethod of another kind, when applying oxalic acid, can in nitrogen, toast.Assist in removing at any cupric oxide that occurs on the copper and remove any copper particle that occurs on may no copper zone with oxalic acid at goods 10.Can apply oxalic acid by spraying on the goods 10 or simply goods 10 being immersed in the oxalic acid groove.
Next step of this method applies the Pd seeding aqueous solution to goods 10.Can apply seeding solution by spraying or immersion, and at room temperature carry out usually.According to the present invention, the Pd seeding solution of invention is included in the active component of palladium, acetic acid and chloride (being the component of chloride) in the aqueous solution.The inventor finds a small amount of but the chloride of effective dose causes repeatably method, wherein effective seeding under resistance (Rs) the increase situation seldom of copper cash.Conventional Pd seeding solution comprises palladium bichloride or palladium sulfate.Yet such seeding solution is too strong for the copper aggressivity, and is especially true when copper is used for electronic application.If Pd seeding solution aggressivity is too strong, will etches away too many copper, thereby increase the resistance of residual copper unfriendly.The pH value of Pd seeding solution also is so, minimizes to cause undesirable colloid to form.
Preferred Pd seeding solution comprises about 0.01 to 0.5g/l palladium, the acetic acid of 0.25 to 5 percent by volume and 3 to 10ppm chloride, and most preferably, the acetic acid of the palladium of 0.01g/l, 0.25 to 1 percent by volume and 3 arrives the chloride of 10ppm.Chloride is as the actual adding of compound, and wherein the chloride component of compound is used for the seeding reaction.The example of suitable chloride cpd includes but not limited to hydrochloric acid (HCl), sodium chloride (NaCl), potassium chloride (KCl), ammonium chloride (NH
4Cl) and palladium bichloride (PdCl
2), wherein hydrochloric acid is most preferred.Though PdCl
2Can be used as chloride, should be appreciated that be used for seeding reaction Pd seldom, most Pd derive from acetic acid Pd.PdCl
2, as noted, or not do not connect up because the aggressivity of seeding is understood defective copper too by force as the main source of supply of Pd.
For obtain repeatably and thereby the method that can make, must the muriatic amount of strict control.The measurer of palladium and acetic acid has the concentration range of broad.Be lower than about 0.01g/l if palladium is reduced to, the Pd seeding difficulty that becomes then, and if palladium is increased to above 0.05g/l because the formation of palladium colloid,, also can the resistance of copper cash be had a negative impact except seed crystal becomes more the instability.Acetic acid is reduced to floor level, 0.25 percent by volume, and most preferably be 1 percent by volume, will cause the highest seed crystal growing amount.Be lower than about 0.25 percent by volume if acetic acid is reduced to, Pd is not dissolved in the solution so, thereby seeding is had a negative impact.Percent by volume surpasses 5 higher concentration acetic acid obstruction Pd seeding, thus the feasible seeding copper effectively that is difficult to.The muriatic interpolation of relatively small amount is the key of Pd seeding solution success.Muriatic preferable range is at 3/1000000ths to 10 (ppm), this scope preferably spray Pd seeding solution than low side, and preferably goods 10 are immersed Pd seeding solution in the higher-end of this scope.Have been found that if chloride is lowered too much (for example, if acetic acid Pd is that about 0.01g/l and acetic acid are about 0.25 percent by volume, when being lower than about 2.5ppm), be invalid seeding, if and chloride is raised De Taigao (for example, if acetic acid Pd is that 0.01g/l and acetic acid are 1 percent by volume, when being higher than 10ppm), the aggressivity of Pd seeding solution becomes too strong, thereby increases the resistance of copper.In general, the scope of pH value should be 2.3 in 3.65, most preferably less than 3, with prevention formation palladium colloid and effective seeding.
Even said components in claimed range, also needs each component concentrations that is mutually related is regulated, to guarantee that Rs is not had effectively seeding of adverse effect ground.If the concentration of palladium is high-end its concentration range, chloride should its scope than low side, otherwise will increase Rs.For acetic acid, the acetic acid of higher concentration can hinder effective seeding, and needs the palladium and the chloride of higher concentration.In case a kind of component (palladium, acetic acid, chloride) is raised or reduces and exceeded claimed range, change other component and just become difficult to guarantee effective seeding and good Rs, even may.
The inventor also finds, although as mentioned above palladium seeding groove is controlled, can form colloidal solid.Not wishing has such colloidal solid, because their positions that to be CoWP in undesirable position may form form.Therefore, the inventor makes Pd seeding solution circulate by pneumatic filter, preferably is not more than the pneumatic filter of 0.006um with pore-size, and it filters out most colloidal solids effectively.With reference to figure 2, make the Pd seeding step of seeding solution with palladium sulfate during, utilize the pneumatic filter of pore-size for 0.02um or 0.006um.Use the sample of CoWP plating seeding subsequently, determine the growing amount that obtains by short circuit demonstration mensuration.(forming short circuit is because at colloidal solid, if having, plating CoWP on the colloidal solid between the copper cash when the more CoWP of plating, will cause the short circuit between the copper cash.) can see that in case the thickness of COWP arrives about 75um, for the filter of 0.02um, growing amount just begins to descend.On the other hand, for the filter of 0.006um, growing amount allows CoWP to be plated to 150um unexpectedly and growing amount decline do not occur.For the latter's sample, plating stops at the 150um place.Though the result who is to use sulfuric acid Pd seeding solution shown in the figure, can expect, use acetic acid Pd seeding solution of the present invention can obtain identical result.
In aforementioned seeding step, discrete Pd ion is attracted on the surface of no copper probably.Do not wish to have the Pd ion of absorption because on their positions beyond the copper for the electroless deposition of CoWP is provided as nuclear location, so should avoid.For removing the Pd ion of such absorption, to goods 10 apply (as, by spraying or immerse) complex solution to be to remove the Pd ion of absorption.Preferably, complex solution comprises the natrium citricum or the ethylenediamine tetra-acetic acid (EDTA) of the amount of 25g/l.Preferably at room temperature apply this complex solution.
The final step of the method according to this invention is with the plating bath electroless plating copper that comprises cobalt, tungsten and phosphorus, so that deposit the CoWP layer on copper.Plating bath can spray on the goods 10 and maybe goods 10 can be immersed in the plating bath.Used plating bath comprises the cobaltous sulfate of 6g/l, the natrium citricum of 25g/l, the boric acid of 30g/l, the sodium hypohosphate of 8g/l, the ammonium tungstate of 2.5g/l and the surfactant of 0.05g/l, for example can be from Dow Chemical, the L95 that Midland, Michigan obtain.The pH value of plating bath is adjusted into 8.95 with NaOH, and the temperature of plating bath is 73 ℃.
Example
Behind the example below reference, it is more obvious that advantage of the present invention will become.
Prepare a series of samples.Each sample seeding aqueous solution seeding that comprises palladium, acetic acid, hydrochloric acid and water, but as listed in the table, every kind amount in change palladium, the acetate and hydrochloride.Some samples are immersed in the seeding solution, and other sample seeding solution spraying.Then, each sample all passes through the complex solution effect, to remove the Pd ion of absorption, uses CoWP plating bath electroless plating then.The result represents in following table.
| Sample number | Acetic acid Pd g/l | Acetic acid volume % | HCl ppm | Spraying (S) or immersion (I) | The result |
| 1 | 0.005 | 1 | 3 | S | Invalid seeding |
| 2 | 0.01 | 0.25 | 2 | S | Invalid seeding |
| 3 | 0.01 | 0.25 | 3 | S | Effective seeding, Rs increases few |
| 4 | 0.01 | 0.25 | 5 | S | Effective seeding, Rs increases few |
| 5 | 0.01 | 0.25 | 10 | S | Effective seeding, Rs increases |
| 6 | 0.01 | 1 | 3 | S | Effective seeding, Rs increases few |
| 7 | 0.01 | 1 | 3 | I | Effective seeding, Rs increases few |
| 8 | 0.01 | 1 | 5 | S | Effective seeding, Rs increases few |
| 9 | 0.01 | 1 | 5 | I | Effective seeding, Rs increases few |
| 10 | 0.01 | 1 | 10 | S | Effective seeding, Rs increases |
| 11 | 0.01 | 1 | 10 | I | Effectively seeding hangs down Rs |
| 12 | 0.01 | 5 | 10 | S | Invalid seeding |
| 13 | 0.01 | 5 | 20 | S | Rs increases |
| 14 | 0.05 | 1 | 3 | S | Effective seeding |
| 15 | 0.05 | 1 | 5 | S | Rs increases |
| 16 | 0.07 | 1 | 3 | S | Rs increases |
Top example illustrates the validity of the claimed range of seeding solution of the present invention, and the correlation between each component in the seeding solution also has been described.
In sample 1 and 2, the concentration of acetic acid Pd or hydrochloric acid is too low, causes invalid seeding.Sample 3 to 11 and sample 14 are in preferable range and obtained good result.For sample 5 and 10, though effective seeding, the concentration of hydrochloric acid that applies for spraying is high slightly, thereby causes the increase of Rs.If apply seeding by immersion, will obtain Rs increases less effective seeding.
Though sample 12 in preferable range, is invalid seeding.This concentration owing to acetic acid is higher.Higher acetate concentration has hindered effective seeding, and requires the concentration of acetic acid Pd and/or hydrochloric acid higher.Yet when concentration of hydrochloric acid was higher, for example at the 20ppm shown in the sample 13, but it was very high to obtain effective seeding Rs.
Sample 15 and 16 has all caused high Rs, though sample 15 is in preferable range.Because acetic acid Pd is high-end its concentration range,, be less than 5ppm at least so hydrochloric acid should be in the low side of its concentration range.On the other hand, when acetic acid Pd has exceeded preferable range high-end, even, also have very high Rs for the hydrochloric acid of the very low concentration shown in sample 16.
Concerning about those skilled in the art of the present disclosure, obviously, only otherwise break away from spirit of the present invention, can exceed at this specifically described embodiment the present invention is carried out other modification.Therefore, such modification only is considered as included in the scope of the present invention that is limited by appended claims.
Claims (44)
1. carry out the method for electroless plating on the copper in being included in substrate or on the substrate, may further comprise the steps:
Palladium, acetic acid and the muriatic seeding aqueous solution are put on described substrate, only on the described copper and not form the palladium inculating crystal layer on the remainder at described substrate;
Complex solution is put on described substrate, to remove the palladium ion that on described substrate, adsorbs; And
With the described copper of plating bath electroless plating that comprises cobalt, tungsten and phosphorus, with deposition one deck cobalt, tungsten and phosphorus on described palladium seed crystal.
2. according to the method for claim 1, also be included in the step of the described copper of prerinse before described substrate applies the described step of seeding solution.
3. according to the method for claim 2, wherein said pre-wash step comprises, heats described substrate down at 100 ℃ in nitrogen, applies oxalic acid solution to described substrate subsequently.
4. according to the method for claim 2, wherein said pre-wash step comprises to described substrate and applies oxalic acid solution.
5. according to the process of claim 1 wherein that described palladium, acetic acid and muriatic solution comprise the palladium of 0.01g/l, the acetic acid of 0.25 to 5 percent by volume and 3 to 10ppm chloride.
6. according to the method for claim 5, wherein said chloride is selected from: hydrochloric acid, sodium chloride, potassium chloride, ammonium chloride and palladium bichloride.
7. according to the method for claim 5, wherein said chloride is a hydrochloric acid.
8. according to the process of claim 1 wherein that described palladium, acetic acid and muriatic solution comprise the palladium of 0.01g/l, the acetic acid of 0.25 to 1 percent by volume and 3 to 10ppm chloride.
9. method according to Claim 8, wherein said chloride is selected from: hydrochloric acid, sodium chloride, potassium chloride, ammonium chloride and palladium bichloride.
10. method according to Claim 8, wherein said chloride is a hydrochloric acid.
11. according to the process of claim 1 wherein that described complex solution comprises complexing agent, described complexing agent is selected from: natrium citricum and ethylenediamine tetra-acetic acid (EDTA).
12. according to the method for claim 11, wherein said complexing agent exists with the amount of 25g/l.
13. the method according to claim 1 comprises circulation step, by the described at least seeding solution of pneumatic filter circulation, to remove undesirable particle.
14. according to the method for claim 13, wherein said pneumatic filter has 0.006 micron average pore size.
15. the method for a deposition inculating crystal layer on copper may further comprise the steps:
Palladium, acetic acid and the muriatic aqueous solution are put on described copper, only on described copper, to form the palladium inculating crystal layer.
16., also be included in the step of the described copper of prerinse before described copper applies the described step of seeding solution according to the method for claim 15.
17. according to the method for claim 16, wherein said pre-wash step comprises, heats described copper down at 100 ℃ in nitrogen, applies oxalic acid solution to described copper subsequently.
18. according to the method for claim 16, wherein said pre-wash step comprises to described copper and applies oxalic acid solution.
19. according to the method for claim 15, wherein said palladium, acetic acid and muriatic solution comprise the palladium of 0.01g/l, the acetic acid of 0.25 to 5 percent by volume and 3 to 10ppm chloride.
20. according to the method for claim 19, wherein said chloride is selected from: hydrochloric acid, sodium chloride, potassium chloride, ammonium chloride and palladium bichloride.
21. according to the method for claim 19, wherein said chloride is a hydrochloric acid.
22. according to the method for claim 15, wherein said palladium, acetic acid and muriatic solution comprise the palladium of 0.01g/l, the acetic acid of 0.25 to 1 percent by volume and 3 to 10ppm chloride.
23. according to the method for claim 22, wherein said chloride is selected from: hydrochloric acid, sodium chloride, potassium chloride, ammonium chloride and palladium bichloride.
24. according to the method for claim 22, wherein said chloride is a hydrochloric acid.
25. the method according to claim 15 comprises circulation step, by the pneumatic filter described seeding solution that circulates, to remove undesirable particle.
26. according to the method for claim 25, wherein said pneumatic filter has 0.006 micron average pore size.
27. carry out the method for electroless plating on the copper in being included in semiconductor wafer or on the semiconductor wafer, may further comprise the steps:
Preparation has the semiconductor wafer that copper zone and no copper zone are arranged;
Palladium, acetic acid and the muriatic aqueous solution are put on described semiconductor wafer, only on described no copper zone, not form the palladium inculating crystal layer described have on the copper zone;
Complex solution is put on described semiconductor wafer, to remove the palladium ion that on described no copper zone, adsorbs; And
With the described copper of plating bath electroless plating that comprises cobalt, tungsten and phosphorus, with deposition one deck cobalt, tungsten and phosphorus on described palladium seed crystal.
28., also be included in the step of the described copper of prerinse before described semiconductor wafer applies the described step of seeding solution according to the method for claim 27.
29. according to the method for claim 28, wherein said pre-wash step comprises, heats described semiconductor wafer down at 100 ℃ in nitrogen, applies oxalic acid solution to described semiconductor wafer subsequently.
30. according to the method for claim 28, wherein said pre-wash step comprises to described semiconductor wafer and applies oxalic acid solution.
31. according to the method for claim 27, wherein said palladium, acetic acid and muriatic solution comprise the palladium of 0.01g/l, the acetic acid of 0.25 to 5 percent by volume and 3 to 10ppm chloride.
32. according to the method for claim 31, wherein said chloride is selected from: hydrochloric acid, sodium chloride, potassium chloride, ammonium chloride and palladium bichloride.
33. according to the method for claim 31, wherein said chloride is a hydrochloric acid.
34. according to the method for claim 27, wherein said palladium, acetic acid and muriatic solution comprise the palladium of 0.01g/l, the acetic acid of 0.25 to 1 percent by volume and 3 to 10ppm chloride.
35. according to the method for claim 34, wherein said chloride is selected from: hydrochloric acid, sodium chloride, potassium chloride, ammonium chloride and palladium bichloride.
36. according to the method for claim 34, wherein said chloride is a hydrochloric acid.
37. according to the method for claim 27, wherein said complex solution comprises complexing agent, described complexing agent is selected from: natrium citricum and ethylenediamine tetra-acetic acid (EDTA).
38. according to the method for claim 37, wherein said complexing agent exists with the amount of 25g/l.
39. the method according to claim 27 comprises circulation step, by the described at least seeding solution of pneumatic filter circulation, to remove undesirable particle.
40. according to the method for claim 39, wherein said pneumatic filter has 0.006 micron average pore size.
41. according to the method for claim 27, wherein said copper-clad is drawn together copper interconnect wiring.
42. a seeding solution that is used for depositing Pd seed crystal on copper comprises palladium, acetic acid and the muriatic aqueous solution.
43. according to the seeding solution of claim 42, wherein said palladium, acetic acid and the muriatic aqueous solution comprise the palladium of 0.01g/l, the acetic acid of 0.25 to 5 percent by volume and 3 to 10ppm chloride.
44. according to the seeding solution of claim 42, wherein said palladium, acetic acid and the muriatic aqueous solution comprise the palladium of 0.01g/l, the acetic acid of 0.25 to 1 percent by volume and 3 to 10ppm chloride.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/905,230 US7253106B2 (en) | 2004-12-22 | 2004-12-22 | Manufacturable CoWP metal cap process for copper interconnects |
| US10/905,230 | 2004-12-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1794441A true CN1794441A (en) | 2006-06-28 |
| CN100356547C CN100356547C (en) | 2007-12-19 |
Family
ID=36596524
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB200510105104XA Expired - Fee Related CN100356547C (en) | 2004-12-22 | 2005-09-22 | Manufacturable cowp metal cap process for copper interconnects |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US7253106B2 (en) |
| CN (1) | CN100356547C (en) |
| TW (1) | TWI371080B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101911265B (en) * | 2008-03-19 | 2012-07-04 | 日矿金属株式会社 | Electronic member wherein barrier-seed layer is formed on base |
| CN102569167A (en) * | 2010-12-16 | 2012-07-11 | 中芯国际集成电路制造(北京)有限公司 | Method for forming dual damascene structure |
| CN103137457A (en) * | 2011-12-05 | 2013-06-05 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method of FinFET contact structure |
| CN103945654A (en) * | 2013-01-18 | 2014-07-23 | 北大方正集团有限公司 | Method for leaving palladium ions in non-metallized holes of passivation circuit board and circuit board manufactured through same |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2374359C2 (en) * | 2003-05-09 | 2009-11-27 | Басф Акциенгезельшафт | Compositions for de-energised deposition of triple materials for semiconsuctor industry |
| US7237334B2 (en) * | 2005-08-18 | 2007-07-03 | Intel Corporation | Method of providing a printed circuit board using laser assisted metallization and patterning of a microelectronic substrate |
| US8361237B2 (en) * | 2008-12-17 | 2013-01-29 | Air Products And Chemicals, Inc. | Wet clean compositions for CoWP and porous dielectrics |
| EP2233608B1 (en) * | 2009-03-23 | 2016-03-23 | ATOTECH Deutschland GmbH | Pre-treatment process for electroless nickel plating |
| US8211776B2 (en) | 2010-01-05 | 2012-07-03 | International Business Machines Corporation | Integrated circuit line with electromigration barriers |
| US9123726B2 (en) | 2013-01-18 | 2015-09-01 | International Business Machines Corporation | Selective local metal cap layer formation for improved electromigration behavior |
| US9076847B2 (en) | 2013-01-18 | 2015-07-07 | International Business Machines Corporation | Selective local metal cap layer formation for improved electromigration behavior |
| US9865673B2 (en) | 2015-03-24 | 2018-01-09 | International Business Machines Corporation | High resistivity soft magnetic material for miniaturized power converter |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60195077A (en) | 1984-03-16 | 1985-10-03 | 奥野製薬工業株式会社 | Catalyst composition for ceramic electroless plating |
| US4956197A (en) | 1986-10-27 | 1990-09-11 | International Business Machines Corporation | Plasma conditioning of a substrate for electroless plating |
| US5882736A (en) * | 1993-05-13 | 1999-03-16 | Atotech Deutschland Gmbh | palladium layers deposition process |
| US5695810A (en) | 1996-11-20 | 1997-12-09 | Cornell Research Foundation, Inc. | Use of cobalt tungsten phosphide as a barrier material for copper metallization |
| DE19734974A1 (en) * | 1997-08-13 | 1999-02-25 | Hoechst Ag | Production of supported catalyst for vinyl acetate production |
| US6495200B1 (en) * | 1998-12-07 | 2002-12-17 | Chartered Semiconductor Manufacturing Ltd. | Method to deposit a seeding layer for electroless copper plating |
| US6323128B1 (en) | 1999-05-26 | 2001-11-27 | International Business Machines Corporation | Method for forming Co-W-P-Au films |
| US6153935A (en) | 1999-09-30 | 2000-11-28 | International Business Machines Corporation | Dual etch stop/diffusion barrier for damascene interconnects |
| JP3307375B2 (en) * | 1999-10-04 | 2002-07-24 | 日本電気株式会社 | Method for manufacturing semiconductor device |
| US6468833B2 (en) | 2000-03-31 | 2002-10-22 | American Air Liquide, Inc. | Systems and methods for application of substantially dry atmospheric plasma surface treatment to various electronic component packaging and assembly methods |
| JP4181332B2 (en) * | 2002-03-26 | 2008-11-12 | 松下電器産業株式会社 | Thin film manufacturing method and manufacturing apparatus |
| US6821324B2 (en) * | 2002-06-19 | 2004-11-23 | Ramot At Tel-Aviv University Ltd. | Cobalt tungsten phosphorus electroless deposition process and materials |
| US6797312B2 (en) * | 2003-01-21 | 2004-09-28 | Mattson Technology, Inc. | Electroless plating solution and process |
| US6794288B1 (en) * | 2003-05-05 | 2004-09-21 | Blue29 Corporation | Method for electroless deposition of phosphorus-containing metal films onto copper with palladium-free activation |
| US20050085031A1 (en) * | 2003-10-15 | 2005-04-21 | Applied Materials, Inc. | Heterogeneous activation layers formed by ionic and electroless reactions used for IC interconnect capping layers |
| US7205233B2 (en) * | 2003-11-07 | 2007-04-17 | Applied Materials, Inc. | Method for forming CoWRe alloys by electroless deposition |
| JP4436124B2 (en) * | 2003-12-25 | 2010-03-24 | 三菱重工業株式会社 | Denitration catalyst regeneration method |
| US20050161338A1 (en) * | 2004-01-26 | 2005-07-28 | Applied Materials, Inc. | Electroless cobalt alloy deposition process |
| US20050170650A1 (en) * | 2004-01-26 | 2005-08-04 | Hongbin Fang | Electroless palladium nitrate activation prior to cobalt-alloy deposition |
-
2004
- 2004-12-22 US US10/905,230 patent/US7253106B2/en not_active Expired - Fee Related
-
2005
- 2005-09-22 CN CNB200510105104XA patent/CN100356547C/en not_active Expired - Fee Related
- 2005-12-02 TW TW094142694A patent/TWI371080B/en not_active IP Right Cessation
-
2007
- 2007-05-22 US US11/751,788 patent/US7407605B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101911265B (en) * | 2008-03-19 | 2012-07-04 | 日矿金属株式会社 | Electronic member wherein barrier-seed layer is formed on base |
| CN102569167A (en) * | 2010-12-16 | 2012-07-11 | 中芯国际集成电路制造(北京)有限公司 | Method for forming dual damascene structure |
| CN103137457A (en) * | 2011-12-05 | 2013-06-05 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method of FinFET contact structure |
| CN103945654A (en) * | 2013-01-18 | 2014-07-23 | 北大方正集团有限公司 | Method for leaving palladium ions in non-metallized holes of passivation circuit board and circuit board manufactured through same |
Also Published As
| Publication number | Publication date |
|---|---|
| US7253106B2 (en) | 2007-08-07 |
| TW200625528A (en) | 2006-07-16 |
| CN100356547C (en) | 2007-12-19 |
| US20060134911A1 (en) | 2006-06-22 |
| TWI371080B (en) | 2012-08-21 |
| US7407605B2 (en) | 2008-08-05 |
| US20070215842A1 (en) | 2007-09-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100356547C (en) | Manufacturable cowp metal cap process for copper interconnects | |
| KR100745388B1 (en) | Process for fabricating a semiconductor device | |
| US6821909B2 (en) | Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application | |
| US6436816B1 (en) | Method of electroless plating copper on nitride barrier | |
| US7285494B2 (en) | Multiple stage electroless deposition of a metal layer | |
| US7432200B2 (en) | Filling narrow and high aspect ratio openings using electroless deposition | |
| US6180523B1 (en) | Copper metallization of USLI by electroless process | |
| US7205228B2 (en) | Selective metal encapsulation schemes | |
| US7622382B2 (en) | Filling narrow and high aspect ratio openings with electroless deposition | |
| US6486055B1 (en) | Method for forming copper interconnections in semiconductor component using electroless plating system | |
| CN1516895A (en) | Barrier enhancement process for copper interconnects | |
| US6911229B2 (en) | Structure comprising an interlayer of palladium and/or platinum and method for fabrication thereof | |
| US7064065B2 (en) | Silver under-layers for electroless cobalt alloys | |
| US7442267B1 (en) | Anneal of ruthenium seed layer to improve copper plating | |
| US6509262B1 (en) | Method of reducing electromigration in copper lines by calcium-doping copper surfaces in a chemical solution | |
| US6875260B2 (en) | Copper activator solution and method for semiconductor seed layer enhancement | |
| US7223694B2 (en) | Method for improving selectivity of electroless metal deposition | |
| US6621165B1 (en) | Semiconductor device fabricated by reducing carbon, sulphur, and oxygen impurities in a calcium-doped copper surface | |
| KR20090102464A (en) | Electroless plating solution and plating method using the same | |
| JP4343366B2 (en) | Copper deposition on substrate active surface | |
| KR100858873B1 (en) | A method for forming damscene metal wire using copper electroless plating |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20171107 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171107 Address after: American New York Patentee after: Core USA second LLC Address before: American New York Patentee before: International Business Machines Corp. |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20071219 Termination date: 20190922 |