CN1790707A - Multi-mode quickflashing memory IC - Google Patents
Multi-mode quickflashing memory IC Download PDFInfo
- Publication number
- CN1790707A CN1790707A CN 200410102230 CN200410102230A CN1790707A CN 1790707 A CN1790707 A CN 1790707A CN 200410102230 CN200410102230 CN 200410102230 CN 200410102230 A CN200410102230 A CN 200410102230A CN 1790707 A CN1790707 A CN 1790707A
- Authority
- CN
- China
- Prior art keywords
- flash memory
- fast flash
- crystal grain
- multimodal
- quickflashing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
- H01L2225/06562—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking at least one device in the stack being rotated or offset
Abstract
The invention relates to a multimode flash memory IC, which comprises: a packaged base with complex flash memory crystal particles and conversion device arranged on itself, inputting control signal into conversion device to control the crystal particles to switch memory mode.
Description
Technical field
The invention relates to a kind of multimodal integrated circuit, refer to a kind of multimodal quickflashing memory IC especially, can be used in 8 bits, 16 bits, 32 bits ... etc. various different modes.
Background technology
With general holder by comparison, because fast flash memory does not need electric power to keep the data that has stored, so behind power-off, the data that originally writes still can be stored in the holder, but also has the jumbo characteristic of small size, make fast flash memory be widely used in many portable 3C Products, the digital storage card (as CF, MMC, SM Card) that uses as individual action assistant (PDA), wireless mobile communication device (mobile phone, PHS etc.), digital camera collocation, card reader, action dish, adapter etc. all can be seen the application of fast flash memory.Generally speaking, fast flash memory is 8 bit patterns, yet, with the work development of technology, for example 8 bits, 16 bits, 32 bits even 64 bits etc. more the fast flash memory of multidigit unit also will occur thereupon, but the integrated circuit of general fast flash memory has just been determined its holder pattern and can't have been become also after encapsulation, therefore not only have many restrictions in the use, for making a merchant, identical fast flash memory crystal grain just can't be migrated after encapsulation, can easy in stock problem take place.
Summary of the invention
The object of the present invention is to provide a kind of multimodal quickflashing memory IC, comprising:
One package substrates:
The fast flash memory crystal grain of one plural number is mounted on this package substrates; And
One conversion equipment, be arranged on this package substrates, include a plurality of control lines and at least one input, this input receives an input controlling signal and switches plural number kind holder pattern, to control each fast flash memory crystal grain according to the holder pattern switched, make these a plurality of control lines respectively correspondence be connected to these fast flash memory crystal grain.
Wherein each fast flash memory crystal grain is N bit pattern.
Wherein this predetermined number is 2
M, this plural number kind holder pattern comprises Nx2
0～Nx2
MThe bit pattern, wherein, M=0 is a default integer.
Wherein also include a packaging body (body), encapsulation (packaging) these fast flash memory crystal grain and this conversion equipment.
Wherein these fast flash memory crystal grain are to be stacked on this package substrates.
Wherein, N=8 and M=2, and have four fast flash memory crystal grain to be mounted on this package substrates, and tool 8 bits, 16 bits and 32 bit patterns.
Wherein this conversion equipment also includes a plurality of external worlds and exports/go into end to send/to receive extraneous data, and each fast flash memory also includes a plurality of data and exports/go into end to be connected to this conversion equipment respectively, make this conversion equipment can be when each holder mode state, carry out these external worlds export/go into end and the corresponding conversion between the end is exported/gone into to these data.
Description of drawings
Fig. 1 is the encapsulating structure schematic diagram of a preferred embodiment of the present invention.
Fig. 2 is the circuit diagram of a preferred embodiment of the present invention.
Fig. 3 is the various modes schematic diagram of a preferred embodiment of the present invention.
Embodiment
Please refer to Fig. 1 is the encapsulating structure schematic diagram of a preferred embodiment of the present invention, as shown in the figure, four fast flash memory crystal grain, 11 interlaced with each other being stacked on the package substrates 10 is arranged, and encapsulate with packaging body 13; One conversion equipment 120 also is arranged on this package substrates 10, and encapsulate with identical packaging body 13, conversion equipment 120 has two inputs 121 to receive the input controlling signal in this example, so that being decoded, the input controlling signal decides the pattern of holder, conversion equipment 120 and have four control lines 122 respectively correspondence be connected to four fast flash memory crystal grain 11, switch several holder patterns to control each fast flash memory crystal grain 11.
Please refer to Fig. 2 is the circuit diagram of a preferred embodiment of the present invention.As shown in the figure, each fast flash memory crystal grain 11 is all 8 bit patterns, and all has activation (CF) pin position 110 and one group of I/O IO 0-7, and these four fast flash memory crystal grain 11 can be formed maximum 32 bit patterns altogether.Conversion equipment 120 receives the input controlling signal to change its pattern by input 121, if the input of incoming line M1 and incoming line M2 is respectively logical zero and logical zero, then is 8x2
0=8 bit patterns, if difference input logic " 0 " and logical one, then its pattern is 8x2
1=16 bit patterns if the two input is all logical one, then are 8x2
2=32 bit patterns; Conversion equipment 120 also includes activation pin hyte 20, and the activation pin position 110 of respectively corresponding each the fast flash memory crystal grain 11 of each activation pin position CE1-CE4 is to drive respectively; In addition, also have four groups of extraneous I/O TIO 0-7, TIO 8-15, TIO 016-23, reach TIO 24-31, because of of the I/O IO 0-7 respectively corresponding connection of various bit pattern with above-mentioned four fast flash memory crystal grain 11.Therefore visual various demands of user and give the switching that the various input controlling signal of input can be finished different mode.
Please refer to the various modes schematic diagram of a preferred embodiment of the present invention shown in Figure 3, when being respectively pattern one (8 bit), pattern two (16 bit) and pattern three (32 bit), the corresponding conversion schematic diagram that conversion equipment 120 is carried out; When its input state is in pattern for the moment, TIO 0-7 corresponds to the I/O IO 0-7 of the first fast flash memory crystal grain 11 respectively among the extraneous I/O TIO 0-31 of conversion equipment 120, extraneous I/O TIO 8-15 then corresponds to the I/O IO 0-7 of the second fast flash memory crystal grain 11 respectively, extraneous I/O TIO 16-23 corresponds to the I/O IO 0-7 of the 3rd fast flash memory crystal grain 11 respectively, and extraneous I/O TIO 24-31 corresponds to the I/O IO 0-7 of the 4th fast flash memory crystal grain 11 respectively, so can be considered four independently 8 bit fast flash memory crystal grain 11.
If pattern two (16 bit), then the first fast flash memory crystal grain 11 and the second fast flash memory crystal grain 11 are considered as same memory unit, the 3rd fast flash memory crystal grain 11 and the 4th fast flash memory crystal grain 11 are considered as another memory unit, with the connection mode of conversion equipment 120 as shown in the figure, TIO0 connects the IO0 of the first fast flash memory crystal grain 11, TIO1 then links the IO0 of the second fast flash memory crystal grain 11, TIO2 links the IO1 of the first fast flash memory crystal grain 11, and the IO1 that TIO3 then links the second fast flash memory crystal grain 11 complies with than analogizing; The corresponding situation of same TIO16-31 and the 3rd, the 4th fast flash memory brilliant thick 11 also is identical, and TIO16 connects the IO0 of the 3rd fast flash memory crystal grain 11, and TIO17 connects the IO0 of the 4th fast flash memory crystal grain 11, and is fixed corresponding mutually in the mode of jumping.
Pattern three is the situation of 32 bits, first, second, third, reach the 4th fast flash memory crystal grain 11 and all be considered as a whole memory unit, also there is the situation of jump to take place with the corresponding relation of conversion equipment 120, as shown in the figure, IO0, the TIO2 that IO0, the TIO1 that TIO0 connects the first fast flash memory crystal grain 11 connects the second fast flash memory crystal grain 11 connects the IO0 of the 3rd fast flash memory crystal grain 11, TIO3 connects the IO0 of the 4th fast flash memory crystal grain 11, and the rest may be inferred, is the pattern of 32 bits.So by the situation of the just changeable above-mentioned three kinds of patterns of conversion equipment 120, to meet user's demand.
The foregoing description is only given an example for convenience of description, and the interest field that the present invention advocated should be as the criterion so that claim is described certainly, but not only limits to the foregoing description.
Claims (7)
1. multimodal quickflashing memory IC comprises:
One package substrates:
The fast flash memory crystal grain of one plural number is mounted on this package substrates; And
One conversion equipment, be arranged on this package substrates, include a plurality of control lines and at least one input, this input receives an input controlling signal and switches plural number kind holder pattern, to control each fast flash memory crystal grain according to the holder pattern switched, make these a plurality of control lines respectively correspondence be connected to these fast flash memory crystal grain.
2. multimodal quickflashing memory IC as claimed in claim 1 is characterized in that, wherein each fast flash memory crystal grain is N bit pattern.
3. multimodal quickflashing memory IC as claimed in claim 1 is characterized in that, wherein this predetermined number is 2
M, this plural number kind holder pattern comprises Nx2
0～Nx2
MThe bit pattern, wherein, M=0 is a default integer.
4. multimodal quickflashing memory IC as claimed in claim 1 is characterized in that, wherein also includes a packaging body, encapsulates these fast flash memory crystal grain and this conversion equipment.
5. multimodal quickflashing memory IC as claimed in claim 1 is characterized in that, wherein these fast flash memory crystal grain are to be stacked on this package substrates.
6. multimodal quickflashing memory IC as claimed in claim 3 is characterized in that, wherein, and N=8 and M=2, and have four fast flash memory crystal grain to be mounted on this package substrates, and tool 8 bits, 16 bits and 32 bit patterns.
7. multimodal quickflashing memory IC as claimed in claim 1, it is characterized in that, wherein this conversion equipment also includes a plurality of external worlds and exports/go into end to send/to receive extraneous data, and each fast flash memory also includes a plurality of data and exports/go into end to be connected to this conversion equipment respectively, make this conversion equipment can be when each holder mode state, carry out these external worlds export/go into end and the corresponding conversion between the end is exported/gone into to these data.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410102230 CN1790707A (en) | 2004-12-16 | 2004-12-16 | Multi-mode quickflashing memory IC |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410102230 CN1790707A (en) | 2004-12-16 | 2004-12-16 | Multi-mode quickflashing memory IC |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1790707A true CN1790707A (en) | 2006-06-21 |
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ID=36788375
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200410102230 Pending CN1790707A (en) | 2004-12-16 | 2004-12-16 | Multi-mode quickflashing memory IC |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1790707A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102449762A (en) * | 2010-06-25 | 2012-05-09 | 合胜科技有限公司 | Memory device |
| CN105304130A (en) * | 2014-07-29 | 2016-02-03 | 华邦电子股份有限公司 | Flash memory apparatus and method for performing synchronous operation |
-
2004
- 2004-12-16 CN CN 200410102230 patent/CN1790707A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102449762A (en) * | 2010-06-25 | 2012-05-09 | 合胜科技有限公司 | Memory device |
| CN102449762B (en) * | 2010-06-25 | 2015-06-17 | 新普力科技有限公司 | Memory device |
| CN105304130A (en) * | 2014-07-29 | 2016-02-03 | 华邦电子股份有限公司 | Flash memory apparatus and method for performing synchronous operation |
| CN105304130B (en) * | 2014-07-29 | 2019-04-05 | 华邦电子股份有限公司 | Flash memory device and the method for executing simultaneously operating |
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