CN1787111A - Electric charge pump for controlling power consumption by voltage controlled oscillator - Google Patents
Electric charge pump for controlling power consumption by voltage controlled oscillator Download PDFInfo
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- CN1787111A CN1787111A CN 200410089226 CN200410089226A CN1787111A CN 1787111 A CN1787111 A CN 1787111A CN 200410089226 CN200410089226 CN 200410089226 CN 200410089226 A CN200410089226 A CN 200410089226A CN 1787111 A CN1787111 A CN 1787111A
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- charge pump
- power consumption
- mos transistor
- controlled oscillator
- voltage controlled
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Abstract
The invention discloses a charge pump of controlling power consumption by voltage controlled oscillator, firstly connecting a forward diode, a reverse diode and a MOS transistor in series, and then connecting them to the output end of the charge pump, where the MOS transistor compares with the current of a reference current source by mirror structure, the comparative output voltage is used to control the input frequency of the charge pump. The invention effectively improves the power consumption of the charge pump as actually operating. And it can be applied to various EEPROM or Flash EEPROM circuits.
Description
Technical field
The present invention relates to a kind of SIC (semiconductor integrated circuit), particularly relate to a kind of nonvolatile memory (NVM) that is used for, utilize the charge pump of voltage controlled oscillator (VCO) control power consumption.
Background technology
Charge pump can adopt open loop or closed-loop fashion work.Wherein, in the circuit application of reality, adopt closed-loop fashion work mostly, in order to reduce power consumption.But fixed oscillator provides the charge mode of clock still to produce bigger power consumption, the i.e. constant power consumption of oscillator self under close-loop feedback.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of charge pump that utilizes voltage controlled oscillator control power consumption, and it adopts closed-loop fashion control charge pump, can effectively reduce power consumption.
For solving the problems of the technologies described above, the charge pump that utilizes voltage controlled oscillator control power consumption of the present invention, with a forward diode D2, backward dioded D1 be serially connected in the electric charge delivery side of pump after a MOS transistor MN1 connects, wherein, described MOS transistor MN1 compares by mirror-image structure and reference current source electric current, and relatively to be used to control the incoming frequency of charge pump be the VCO structure to output voltage V B.
Power consumption when the present invention has effectively improved the charge pump real work.Through various condition emulation, reached designing requirement.Can be applied in all kinds of EEPROM or the Flash eeprom circuit.
Description of drawings
Accompanying drawing is the schematic diagram that the present invention utilizes the charge pump of voltage controlled oscillator control power consumption.
Embodiment
As shown in the figure, the charge pump that utilizes voltage controlled oscillator control power consumption of the present invention, with a forward diode D2, backward dioded D1 be serially connected in the electric charge delivery side of pump after a MOS transistor MN1 connects, wherein, described MOS transistor MN1 compares by mirror-image structure and reference current source electric current, and relatively to be used to control the incoming frequency of charge pump be the VCO structure to output voltage V B.
The present invention adopts the mode of Current Feedback Control effectively to control power consumption.When the backward dioded D1 in the above-mentioned series circuit is not breakdown, no current flows through among the MOS transistor MN1, compare with reference current by MOS transistor MP1, the output higher voltage is given VTOI (current/charge-voltage convertor), the electric current that VTOI output is bigger is given ICO (current control oscillator), thereby the incoming frequency of charge pump is for the highest; D1 is reversed puncture along with diode, MOS transistor MN1 electric current progressively increases, MOS transistor MN2 and MP1 current ratio result constantly descend comparative voltage VB, be that the VTOI output current constantly descends, thereby the charge pump frequency of operation is constantly reduced, and reaches setting value until MOS transistor MN1 electric current, and circuit enters steady state (SS), this moment MOS transistor MN1, MN2 electric current and charge pump operating voltage reach stationary value.Because the electric current that MOS transistor MN1 flows through can be set at several uA by reference current source, so the power consumption of circuit can be controlled lessly.And the current source precision prescribed is relatively low, and its chip area can design to such an extent that save.
Claims (1)
1. charge pump that utilizes voltage controlled oscillator control power consumption, with a forward diode D2, backward dioded D1 be serially connected in the electric charge delivery side of pump after a MOS transistor MN1 connects, it is characterized in that: described MOS transistor MN1 compares by mirror-image structure and reference current source electric current, and relatively output voltage V B is used to control the incoming frequency of charge pump.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB200410089226XA CN100552822C (en) | 2004-12-08 | 2004-12-08 | Utilize the charge pump of voltage controlled oscillator control power consumption |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB200410089226XA CN100552822C (en) | 2004-12-08 | 2004-12-08 | Utilize the charge pump of voltage controlled oscillator control power consumption |
Publications (2)
Publication Number | Publication Date |
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CN1787111A true CN1787111A (en) | 2006-06-14 |
CN100552822C CN100552822C (en) | 2009-10-21 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CNB200410089226XA Active CN100552822C (en) | 2004-12-08 | 2004-12-08 | Utilize the charge pump of voltage controlled oscillator control power consumption |
Country Status (1)
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CN (1) | CN100552822C (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101635173B (en) * | 2008-07-21 | 2012-10-03 | 上海华虹Nec电子有限公司 | Method and circuit for self calibration of non-volatile memories, and non-volatile memory circuit |
CN105071654A (en) * | 2015-08-24 | 2015-11-18 | 北京兆易创新科技股份有限公司 | Voltage conversion circuit |
-
2004
- 2004-12-08 CN CNB200410089226XA patent/CN100552822C/en active Active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101635173B (en) * | 2008-07-21 | 2012-10-03 | 上海华虹Nec电子有限公司 | Method and circuit for self calibration of non-volatile memories, and non-volatile memory circuit |
CN105071654A (en) * | 2015-08-24 | 2015-11-18 | 北京兆易创新科技股份有限公司 | Voltage conversion circuit |
CN105071654B (en) * | 2015-08-24 | 2017-12-22 | 北京兆易创新科技股份有限公司 | A kind of voltage conversion circuit |
Also Published As
Publication number | Publication date |
---|---|
CN100552822C (en) | 2009-10-21 |
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Effective date of registration: 20171218 Address after: Zuchongzhi road 201203 Shanghai Pudong New Area Zhangjiang High Tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: No. 1188, Chuan Qiao Road, Pudong, Shanghai Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |
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