CN1787111A - Electric charge pump for controlling power consumption by voltage controlled oscillator - Google Patents

Electric charge pump for controlling power consumption by voltage controlled oscillator Download PDF

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Publication number
CN1787111A
CN1787111A CN 200410089226 CN200410089226A CN1787111A CN 1787111 A CN1787111 A CN 1787111A CN 200410089226 CN200410089226 CN 200410089226 CN 200410089226 A CN200410089226 A CN 200410089226A CN 1787111 A CN1787111 A CN 1787111A
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CN
China
Prior art keywords
charge pump
power consumption
mos transistor
controlled oscillator
voltage controlled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN 200410089226
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Chinese (zh)
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CN100552822C (en
Inventor
王楠
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Huahong Grace Semiconductor Manufacturing Corp
Original Assignee
Shanghai Hua Hong NEC Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Hua Hong NEC Electronics Co Ltd filed Critical Shanghai Hua Hong NEC Electronics Co Ltd
Priority to CNB200410089226XA priority Critical patent/CN100552822C/en
Publication of CN1787111A publication Critical patent/CN1787111A/en
Application granted granted Critical
Publication of CN100552822C publication Critical patent/CN100552822C/en
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Anticipated expiration legal-status Critical

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Abstract

The invention discloses a charge pump of controlling power consumption by voltage controlled oscillator, firstly connecting a forward diode, a reverse diode and a MOS transistor in series, and then connecting them to the output end of the charge pump, where the MOS transistor compares with the current of a reference current source by mirror structure, the comparative output voltage is used to control the input frequency of the charge pump. The invention effectively improves the power consumption of the charge pump as actually operating. And it can be applied to various EEPROM or Flash EEPROM circuits.

Description

Utilize the charge pump of voltage controlled oscillator control power consumption
Technical field
The present invention relates to a kind of SIC (semiconductor integrated circuit), particularly relate to a kind of nonvolatile memory (NVM) that is used for, utilize the charge pump of voltage controlled oscillator (VCO) control power consumption.
Background technology
Charge pump can adopt open loop or closed-loop fashion work.Wherein, in the circuit application of reality, adopt closed-loop fashion work mostly, in order to reduce power consumption.But fixed oscillator provides the charge mode of clock still to produce bigger power consumption, the i.e. constant power consumption of oscillator self under close-loop feedback.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of charge pump that utilizes voltage controlled oscillator control power consumption, and it adopts closed-loop fashion control charge pump, can effectively reduce power consumption.
For solving the problems of the technologies described above, the charge pump that utilizes voltage controlled oscillator control power consumption of the present invention, with a forward diode D2, backward dioded D1 be serially connected in the electric charge delivery side of pump after a MOS transistor MN1 connects, wherein, described MOS transistor MN1 compares by mirror-image structure and reference current source electric current, and relatively to be used to control the incoming frequency of charge pump be the VCO structure to output voltage V B.
Power consumption when the present invention has effectively improved the charge pump real work.Through various condition emulation, reached designing requirement.Can be applied in all kinds of EEPROM or the Flash eeprom circuit.
Description of drawings
Accompanying drawing is the schematic diagram that the present invention utilizes the charge pump of voltage controlled oscillator control power consumption.
Embodiment
As shown in the figure, the charge pump that utilizes voltage controlled oscillator control power consumption of the present invention, with a forward diode D2, backward dioded D1 be serially connected in the electric charge delivery side of pump after a MOS transistor MN1 connects, wherein, described MOS transistor MN1 compares by mirror-image structure and reference current source electric current, and relatively to be used to control the incoming frequency of charge pump be the VCO structure to output voltage V B.
The present invention adopts the mode of Current Feedback Control effectively to control power consumption.When the backward dioded D1 in the above-mentioned series circuit is not breakdown, no current flows through among the MOS transistor MN1, compare with reference current by MOS transistor MP1, the output higher voltage is given VTOI (current/charge-voltage convertor), the electric current that VTOI output is bigger is given ICO (current control oscillator), thereby the incoming frequency of charge pump is for the highest; D1 is reversed puncture along with diode, MOS transistor MN1 electric current progressively increases, MOS transistor MN2 and MP1 current ratio result constantly descend comparative voltage VB, be that the VTOI output current constantly descends, thereby the charge pump frequency of operation is constantly reduced, and reaches setting value until MOS transistor MN1 electric current, and circuit enters steady state (SS), this moment MOS transistor MN1, MN2 electric current and charge pump operating voltage reach stationary value.Because the electric current that MOS transistor MN1 flows through can be set at several uA by reference current source, so the power consumption of circuit can be controlled lessly.And the current source precision prescribed is relatively low, and its chip area can design to such an extent that save.

Claims (1)

1. charge pump that utilizes voltage controlled oscillator control power consumption, with a forward diode D2, backward dioded D1 be serially connected in the electric charge delivery side of pump after a MOS transistor MN1 connects, it is characterized in that: described MOS transistor MN1 compares by mirror-image structure and reference current source electric current, and relatively output voltage V B is used to control the incoming frequency of charge pump.
CNB200410089226XA 2004-12-08 2004-12-08 Utilize the charge pump of voltage controlled oscillator control power consumption Active CN100552822C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNB200410089226XA CN100552822C (en) 2004-12-08 2004-12-08 Utilize the charge pump of voltage controlled oscillator control power consumption

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB200410089226XA CN100552822C (en) 2004-12-08 2004-12-08 Utilize the charge pump of voltage controlled oscillator control power consumption

Publications (2)

Publication Number Publication Date
CN1787111A true CN1787111A (en) 2006-06-14
CN100552822C CN100552822C (en) 2009-10-21

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNB200410089226XA Active CN100552822C (en) 2004-12-08 2004-12-08 Utilize the charge pump of voltage controlled oscillator control power consumption

Country Status (1)

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CN (1) CN100552822C (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101635173B (en) * 2008-07-21 2012-10-03 上海华虹Nec电子有限公司 Method and circuit for self calibration of non-volatile memories, and non-volatile memory circuit
CN105071654A (en) * 2015-08-24 2015-11-18 北京兆易创新科技股份有限公司 Voltage conversion circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101635173B (en) * 2008-07-21 2012-10-03 上海华虹Nec电子有限公司 Method and circuit for self calibration of non-volatile memories, and non-volatile memory circuit
CN105071654A (en) * 2015-08-24 2015-11-18 北京兆易创新科技股份有限公司 Voltage conversion circuit
CN105071654B (en) * 2015-08-24 2017-12-22 北京兆易创新科技股份有限公司 A kind of voltage conversion circuit

Also Published As

Publication number Publication date
CN100552822C (en) 2009-10-21

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Legal Events

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C06 Publication
PB01 Publication
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C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20171218

Address after: Zuchongzhi road 201203 Shanghai Pudong New Area Zhangjiang High Tech Park No. 1399

Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation

Address before: No. 1188, Chuan Qiao Road, Pudong, Shanghai

Patentee before: Shanghai Huahong NEC Electronics Co., Ltd.

TR01 Transfer of patent right