CN1783470B

CN1783470B - Semiconductor device

Info

Publication number: CN1783470B
Application number: CN2005101189007A
Authority: CN
Inventors: 深泽则雄; 川原登志实; 森冈宗知; 大泽满洋; 松木浩久; 小野寺正德; 河西纯一; 丸山茂幸; 竹中正司; 新间康弘; 佐久间正夫; 铃木义美
Original assignee: Fujitsu Semiconductor Ltd
Current assignee: Socionext Inc
Priority date: 1996-07-12
Filing date: 1997-07-10
Publication date: 2013-02-06
Anticipated expiration: 2017-07-10
Also published as: CN100452376C; CN1783470A; CN1855466A

Abstract

The invention provides a semiconductor device. The invention is characterized in that the invention is composed of a semiconductor device with a projecting electrode formed on the surface thereof; a resin bed which is formed on the surface of the semiconductor device and is sealed on the projecting electrode except the top end part thereof; the projecting electrode is provided with a core part and a conductive film formed on the surface of the projecting core part.

Description

Semiconductor device

The application is to be that July 10, application number in 1997 are 02126233.0 the applying date, and denomination of invention is divided an application for the application for a patent for invention of " manufacture method of semiconductor device and semiconductor device ".

Technical field

The present invention relates to manufacture method, semiconductor device die for manufacturing and the semiconductor device of semiconductor device and semiconductor device, particularly relate to the semiconductor device with chip size packages structure.

Background technology

In the last few years, along with the requirement to the miniaturization of e-machine and device, people were seeking miniaturization and the densification of semiconductor device.Therefore, employing makes the shape of semiconductor device do one's utmost to seek miniaturization near the way of semiconductor device (chip).The scheme of the semiconductor device of so-called chip size packages structure has been proposed.

In addition, when making it multi-pipe pin because of densification and making the semiconductor device miniaturization, then the step pitch of external connection terminals will narrow down.For this reason, as saving the structure that forms spatially many external connection terminals, carried out the work of projection electrode as outside terminal.

Fig. 1 (A) shows an example of semiconductor device used in existing nude film (flip-chip) assembling.Be shown in the semiconductor device 1 with figure, rough segmentation is got up, by formations such as semiconductor device 2 (semiconductor chip) and a plurality of projection electrodes 4.

On the lower surface of semiconductor device 2, for example, a plurality of projection electrodes 4 that will become outside terminal have been formed rectangularly.This projection electrode 4 is owing to being the electrode that the soft metal with scolding tin etc. forms, thus be easy to damaged, thereby be difficult to implement loading and unloading and test.Equally, semiconductor device 2 is owing to being the exposed die state also, thereby is easy to damaged, therefore equally with projection electrode 4 is difficult to implement loading and unloading and tests.

In addition, want that above-mentioned semiconductor device 1 is assembled to assembling substrate 5 (for example, printed circuit board) and get on, shown in Fig. 1 (B), at first, form the projection electrode 4 that has formed at semiconductor device 1 at assembling substrate 5.Then, shown in Fig. 1 (C), so-called fill area 6 in filling between semiconductor device 2 and the assembling substrate 5 (with the region representation of band point).

This fill area 6 adopt relatively have mobile resin filling to the gap 7 that forms between semiconductor device 2 and the assembling substrate 5 (with the height of projection electrode about equally) in way formation.

The purpose of the fill area 6 that forms in this wise is set, for the junction between the electrode 5a that prevents projection electrode 4 and assembling substrate 5, or the junction between the electrode of projection electrode 4 and semiconductor device 2, the stress that the difference of the thermal expansion between the substrate 5 produces because of based semiconductor device 2 and assembling, and the stress that is added on the junction surface between semiconductor device 2 and the projection electrode 4 that the heat during because of assembling produces when opening is destroyed.

As mentioned above, fill area 6 is from preventing that destruction (the particularly destruction between electrode and the projection electrode 4) aspect between projection electrode 4 and the assembling substrate 5 from being favourable.Yet this fill area 6 owing to must be filled in the narrow gap 7 of formation between semiconductor device 2 and assembling substrate 5 goes, therefore filling operation is pretty troublesome, and, equably fill area 6 is configured to that to go in the whole gap 7 be difficult.Therefore, formed fill area 6 although exist, but still can be created between projection electrode 4 and the electrode 5a the junction surface or the destruction of projection electrode 4 on the junction surface between the electrode of semiconductor device 2, reduce the problem of the reliability in the assembling.

In addition, above-mentioned semiconductor device 1, owing to semiconductor device 2 is fitted on the substrate 5 under the state that is exposed to the outside, thus exist weak strength, thereby the problem of reliability reduction.

Moreover, because the formation of projection electrode 4 is on the electrode pad that directly is formed on the lower surface that is formed on semiconductor device 2, so the layout of electrode pad just intactly becomes the layout for projection electrode 4.That is, in above-mentioned semiconductor device, because wiring is walked by section, the low problem of the layout degree of freedom of the projection electrode 4 of external connection terminals will be become so exist within it.

Summary of the invention

The present invention is because above-mentioned those problems and inventing, and purpose provides and a kind ofly can improve the manufacturing efficient of semiconductor device and the semiconductor device of reliability.

In addition, another object of the present invention provides a kind of degree of freedom that can improve the terminal layout of semiconductor device, can improve semiconductor device and manufacture method and the assembling structure thereof of reliability simultaneously.

In order to solve above-mentioned problem, the invention provides a kind of semiconductor device, it is characterized in that possessing: the semiconductor device that is formed with from the teeth outwards projection electrode; And be formed on the surface of semiconductor device, seal up the resin bed except the above-mentioned projection electrode of the head portion of projection electrode; The conducting film that above-mentioned projection electrode has the core and forms on above-mentioned outstanding surface, core.

The present invention also provides a kind of semiconductor device, it is characterized in that possessing: the semiconductor device that is formed with from the teeth outwards projection electrode; Form on the surface of semiconductor device, seal up the resin bed except the above-mentioned projection electrode of the head portion of projection electrode; And connect the conducting film of using projection electrode, above-mentioned projection electrode to have the core and form on above-mentioned outstanding surface, core in the outside that the head portion of the above-mentioned projection electrode that has exposed forms from above-mentioned resin bed.

Another kind of semiconductor device provided by the invention is characterized in that possessing: the semiconductor device that is formed with from the teeth outwards projection electrode; And the top ends of the remaining above-mentioned projection electrode that forms on the surface of semiconductor device assigns to seal the resin bed of above-mentioned projection electrode, and the outer peripheral portion of above-mentioned semiconductor device is thinner than middle body.

Another semiconductor device provided by the invention is characterized in that possessing: the semiconductor device that is formed with from the teeth outwards at least one projection electrode; And the top ends of the remaining above-mentioned projection electrode that forms on the above-mentioned surface of semiconductor device assigns to seal the resin bed of above-mentioned projection electrode; Above-mentioned projection electrode is formed by conducting film and the surperficial of above-mentioned core that the surface in outstanding core forms.

Another semiconductor device provided by the invention is characterized in that possessing: the semiconductor device that is formed with from the teeth outwards at least one projection electrode; The top ends of the remaining above-mentioned projection electrode that forms on the above-mentioned surface of semiconductor device assigns to seal the resin bed of above-mentioned projection electrode; And connect in the outside that the head portion of the above-mentioned projection electrode that has exposed from above-mentioned resin bed forms and use projection electrode, above-mentioned projection electrode is formed by the core of giving prominence to and the conducting film that forms on surface, above-mentioned core.

In the manufacture method of semiconductor device of the present invention, it is characterized in that possessing following operation: resin-sealed operation, be used for being attached in the mould having formed the substrate that is equipped with a plurality of semiconductor device of projection electrode, then, on the equipping position of above-mentioned projection electrode, supply with resin, above-mentioned projection electrode and aforesaid substrate with above-mentioned resin-sealed, are formed resin bed; Projection electrode exposes operation, is used for above-mentioned resin at least head portion of above-mentioned projection electrode being exposed; Separation circuit is used for cutting off aforesaid substrate to be separated into semiconductor device one by one with above-mentioned resin bed.

If adopt this formation, by implementing resin-sealed operation, because be fragile, therefore the projection electrode of difficult loading and unloading, test will become the state that has carried out sealing with resin bed.This resin bed plays protection surface and relax the effect of the stress that occurs on the electrode of semiconductor device and the junction surface between the projection electrode.Expose in the operation at ensuing projection electrode, what make projection electrode is the processing that head portion exposes at least.Therefore, under the state after projection electrode exposes operation and finishes, projection electrode will become the state that can be electrically connected with the circuit substrate of outside etc.In the separation circuit of next implementing, with resin bed cut off formed resin bed substrate to be separated into semiconductor device one by one.So, just finished each semiconductor device.So, because resin bed forms in resin-sealed operation, so when the assembling semiconductor device, do not need to carry out again fill area and fill processing, assembling is processed become easily.Also have, to become the sealing resin of resin bed, since be not supply to semiconductor device and assembling between the substrate narrow place but the setting of projection electrode that supply to substrate facially go up and use the mould mold casting forming, so can positively form resin bed on the face setting of whole projection electrode.So; because for all projection electrodes; resin bed plays protective effect, thus can positively prevent when heating projection electrode with the electrode that assembles substrate between the junction surface and the destruction at the junction surface between projection electrode and the semiconductor device, can improve reliability.

Description of drawings

Fig. 1 is for the resin-sealed operation of explanation as the manufacture method of the semiconductor device of embodiments of the invention 1, and as the key diagram of the semiconductor device die for manufacturing of embodiments of the invention 1.Figure 1A～Fig. 1 C is the key diagram of an example of the existing semiconductor device of explanation and manufacture method thereof.

Fig. 2 is for the key diagram of explanation as the resin-sealed operation of the manufacture method of the semiconductor device of embodiments of the invention 1.

Fig. 3 is for the key diagram of explanation as the resin-sealed operation of the manufacture method of the semiconductor device of embodiments of the invention 1.

Fig. 4 is for the key diagram of explanation as the resin-sealed operation of the manufacture method of the semiconductor device of embodiments of the invention 1.

Fig. 5 is for the key diagram of explanation as the resin-sealed operation of the manufacture method of the semiconductor device of embodiments of the invention 1.

Fig. 6 is the key diagram that exposes operation for explanation as the projection electrode of the manufacture method of the semiconductor device of embodiments of the invention 1.(A) showing substrate after resin-sealed operation finishes, (B) is the expanded view with the part shown in the arrow A of (A).

Fig. 7 is the key diagram that exposes operation for explanation as the projection electrode of the manufacture method of the semiconductor device of embodiments of the invention 1.(A) just showing substrate at the state of stripping film, (B) is the expanded view with the part shown in the arrow B of (A).

Fig. 8 is within the manufacture method as the semiconductor device of embodiments of the invention 1, is used for the key diagram of explanation separation circuit.

Fig. 9 is for the key diagram of explanation as the semiconductor device of embodiments of the invention 1.

Figure 10 is as the manufacture method of the semiconductor device of embodiments of the invention 2 with as the key diagram of the semiconductor device die for manufacturing of embodiments of the invention 2 for explanation.

Figure 11 is the key diagram as the manufacture method of the semiconductor device of embodiments of the invention 3.

Figure 12 is the key diagram as the manufacture method of the semiconductor device of embodiments of the invention 4.

Figure 13 is the key diagram as the manufacture method of the semiconductor device of embodiments of the invention 5.

Figure 14 is the key diagram as the manufacture method of the semiconductor device of embodiments of the invention 5.

Figure 15 shows example with laminar resin as sealing resin.

Figure 16 shows the example that waters tank (potting) with compound as the feedway of sealing resin.

Figure 17 shows the example that sealing resin is set film one side.

Figure 18 is the key diagram as the manufacture method of the semiconductor device of embodiments of the invention 6.

Figure 19 is for the key diagram of explanation as the manufacture method of the semiconductor device of embodiments of the invention 7.(A) showing substrate after resin-sealed operation finishes, (B) is the expanded view with the part shown in the arrow C of (A).

Figure 20 is for the key diagram of explanation as the manufacture method of the semiconductor device of embodiments of the invention 7.(A) just showing substrate at the state of stripping film, (B) is the expanded view with the part shown in the arrow D of (A).

Figure 21 is the key diagram as the manufacture method of the semiconductor device of embodiments of the invention 7.

Figure 22 is the key diagram as the semiconductor device die for manufacturing of embodiments of the invention 3.

Figure 23 is the key diagram as the semiconductor device die for manufacturing of embodiments of the invention 4.

Figure 24 is the key diagram as the semiconductor device die for manufacturing of embodiments of the invention 5.

Figure 25 is the key diagram as the semiconductor device die for manufacturing of embodiments of the invention 6.

Figure 26 is the key diagram as the manufacture method of the semiconductor device of embodiments of the invention 2.

Figure 27 is the key diagram as the manufacture method of the semiconductor device of embodiments of the invention 3.

Figure 28 is the key diagram as the manufacture method of the semiconductor device of embodiments of the invention 8.

Figure 29 is the key diagram as the manufacture method of the semiconductor device of embodiments of the invention 9.

Figure 30 is the key diagram as the manufacture method of the semiconductor device of embodiments of the invention 10.

Figure 31 is the key diagram as the manufacture method of the semiconductor device of embodiments of the invention 11.

Figure 32 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 12 (its 1).

Figure 33 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 12 (its 2).

Figure 34 is the key diagram as the manufacture method of the semiconductor device of embodiments of the invention 13.

Figure 35 is the key diagram as the manufacture method of the semiconductor device of embodiments of the invention 14.

Figure 36 is the key diagram as the manufacture method of the semiconductor device of embodiments of the invention 15.

Figure 37 is the key diagram as the manufacture method of the semiconductor device of embodiments of the invention 16.

Figure 38 is the key diagram as the manufacture method of the semiconductor device of embodiments of the invention 17.

Figure 39 is the key diagram as the manufacture method of the semiconductor device of embodiments of the invention 18.

Figure 40 is the expanded view of substrate used in Figure 39.

Figure 41 is the key diagram as the manufacture method of the semiconductor device of embodiments of the invention 19.

Figure 42 is the key diagram as the manufacture method of the semiconductor device of embodiments of the invention 20.

Figure 43 is the key diagram as the manufacture method of the semiconductor device of embodiments of the invention 21.

Figure 44 is the key diagram as the manufacture method of the semiconductor device of embodiments of the invention 22.

Figure 45 is the key diagram as the manufacture method of the semiconductor device of embodiments of the invention 23.

The oblique view of Figure 46 shows the semiconductor device that has formed locating groove.

Figure 47 is the key diagram as the manufacture method of the semiconductor device of embodiments of the invention 24.

Figure 48 is the key diagram as the manufacture method of the semiconductor device of embodiments of the invention 25.

Figure 49 is the key diagram as the manufacture method of the semiconductor device of embodiments of the invention 26.

Figure 50 is the key diagram as the manufacture method of the semiconductor device of embodiments of the invention 27.

Figure 51 has illustrated the structure of common projection electrode.

Figure 52 is the key diagram as the assembly method of the semiconductor device of embodiments of the invention 1.

Figure 53 is the key diagram as the assembly method of the semiconductor device of embodiments of the invention 2.

Figure 54 is the key diagram as the assembly method of the semiconductor device of embodiments of the invention 3.

Figure 55 is the key diagram as the assembly method of the semiconductor device of embodiments of the invention 4.

Figure 56 is the key diagram as the assembly method of the semiconductor device of embodiments of the invention 5.

Figure 57 is the key diagram as the assembly method of the semiconductor device of embodiments of the invention 6.

Figure 58 is the key diagram as the assembly method of the semiconductor device of embodiments of the invention 7.

Figure 59 is the key diagram as the manufacture method of the semiconductor device of embodiments of the invention 28.

Figure 60 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 29 (its 1).

Figure 61 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 29 (its 2).

Figure 62 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 29 (its 3).

Figure 63 is the key diagram as the semiconductor device of embodiments of the invention 4.

Figure 64 is the key diagram as the assembly method of the semiconductor device of embodiments of the invention 8.

Figure 65 is the key diagram as the assembly method of the semiconductor device of embodiments of the invention 9.

Figure 66 is the key diagram as the assembly method of the semiconductor device of embodiments of the invention 10.

Figure 67 is the key diagram as the assembly method of the semiconductor device of embodiments of the invention 11.

Figure 68 is the key diagram (its 1) of the manufacture method of another kind of semiconductor device.

Figure 69 is the key diagram (its 2) of the manufacture method of another kind of semiconductor device.

Figure 70 is the key diagram (its 3) of the manufacture method of another kind of semiconductor device.

Figure 71 is the key diagram of the formation of another kind of semiconductor device.

Figure 72 is the key diagram (its 1) of the manufacture method of another kind of semiconductor device.

Figure 73 is the key diagram (its 2) of the manufacture method of another kind of semiconductor device.

Figure 74 is the key diagram (its 3) of the manufacture method of another kind of semiconductor device.

Figure 75 is the key diagram (its 4) of the manufacture method of another kind of semiconductor device.

Figure 76 shows the variation of the semiconductor device die for manufacturing of embodiments of the invention 6.

Figure 77 shows the variation of the semiconductor device die for manufacturing of embodiments of the invention 6.

Figure 78 is the key diagram as the semiconductor device of embodiments of the invention 30.

Figure 79 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 30 (its 1).

Figure 80 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 30 (its 2).

Figure 81 is the key diagram as the semiconductor device of embodiments of the invention 31.

Figure 82 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 31 (its 1).

Figure 83 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 31 (its 2).

Figure 84 is the key diagram as the semiconductor device of embodiments of the invention 32.

Figure 85 is the key diagram as the semiconductor device of embodiments of the invention 33.

Figure 86 is the key diagram as the semiconductor device of embodiments of the invention 34.

Figure 87 is the key diagram that residual resin is removed mechanism.

Figure 88 is the key diagram as the semiconductor device of embodiments of the invention 35.

Figure 89 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 35 (its 1).

Figure 90 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 35 (its 2).

Figure 91 is as the semiconductor device of embodiments of the invention 36 and the key diagram of manufacture method thereof.

Figure 92 is as the semiconductor device of embodiments of the invention 37 and the key diagram of manufacture method thereof.

Figure 93 is as the semiconductor device of embodiments of the invention 38 and the key diagram of manufacture method thereof.

Figure 94 is as the semiconductor device of embodiments of the invention 39 and the key diagram of manufacture method thereof.

Figure 95 is as the semiconductor device of embodiments of the invention 40 and the key diagram of manufacture method thereof.

Figure 96 is as the semiconductor device of embodiments of the invention 41 and the key diagram of manufacture method thereof.

Figure 97 is as the semiconductor device of embodiments of the invention 42 and the key diagram of manufacture method thereof.

Figure 98 is as the semiconductor device of embodiments of the invention 43 and the key diagram of manufacture method thereof.

Figure 99 is as the semiconductor device of embodiments of the invention 44 and the key diagram of manufacture method thereof.

Figure 100 is as the semiconductor device of embodiments of the invention 45 and the key diagram of manufacture method thereof.

Figure 101 is as the semiconductor device of embodiments of the invention 46 and the key diagram of manufacture method thereof.

Figure 102 is as the semiconductor device of embodiments of the invention 47 and the key diagram of manufacture method thereof.

Figure 103 shows another embodiment (its 1) of circuit board.

Figure 104 shows another embodiment (its 2) of circuit board.

Figure 105 shows another embodiment (its 3) of circuit board.

Figure 106 shows another embodiment (its 4) of circuit board.

Figure 107 shows another embodiment (its 5) of circuit board.

Figure 108 shows another embodiment (its 6) of circuit board.

Figure 109 shows another embodiment (its 7) of circuit board.

Figure 110 is the key diagram that is shown in the variation of the circuit board among Figure 106.

Figure 111 is as the semiconductor device of embodiments of the invention 48 and the key diagram of manufacture method thereof.

Figure 112 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 48 (its 1).

Figure 113 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 48 (its 2).

Figure 114 is as the semiconductor device of embodiments of the invention 49 and the key diagram of manufacture method thereof.

Figure 115 is as the semiconductor device of embodiments of the invention 50 and the key diagram of manufacture method thereof.

Figure 116 is the key diagram as the semiconductor device of embodiments of the invention 48～53.

Figure 117 is the key diagram of having used the various semiconductor devices of mechanical projection electrode.

Figure 118 is the key diagram as the semiconductor device of embodiments of the invention 54.

Figure 119 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 54 (its 1).

Figure 120 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 54 (its 2).

Figure 121 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 54 (its 3).

Figure 122 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 54 (its 4).

Figure 123 is the key diagram as the semiconductor device of embodiments of the invention 55.

Figure 124 is the key diagram as the semiconductor device of embodiments of the invention 56.

Figure 125 is the key diagram as the semiconductor device of embodiments of the invention 57.

Figure 126 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 55 (its 1).

Figure 127 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 55 (its 2).

Figure 128 is the key diagram as the assembling structure of the semiconductor device of embodiments of the invention 54.

Figure 129 is the key diagram as the assembling structure of the semiconductor device of embodiments of the invention 55.

Figure 130 is the key diagram as the assembling structure of the semiconductor device of embodiments of the invention 56.

Figure 131 is the key diagram as the assembling structure of the semiconductor device of embodiments of the invention 57.

Figure 132 is the key diagram as the assembling structure of the semiconductor device of embodiments of the invention 58.

Figure 133 is the key diagram as the assembling structure of the semiconductor device of embodiments of the invention 59.

Figure 134 is the key diagram as the assembling structure of the semiconductor device of embodiments of the invention 60.

Figure 135 is the key diagram as the semiconductor device of embodiments of the invention 57.

Figure 136 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 56 (its 1).

Figure 137 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 56 (its 2).

Figure 138 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 56 (its 3).

Figure 139 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 56 (its 4).

Figure 140 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 56 (its 5).

Figure 141 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 56 (its 6).

Figure 142 is the key diagram as the semiconductor device of embodiments of the invention 59.

Figure 143 is the key diagram as the semiconductor device of embodiments of the invention 60.

Figure 144 is the key diagram as the semiconductor device of embodiments of the invention 61.

Figure 145 is the key diagram as the semiconductor device of embodiments of the invention 62.

Figure 146 is the key diagram as the semiconductor device of embodiments of the invention 63.

Figure 147 is the key diagram as the semiconductor device of embodiments of the invention 64.

Figure 148 is the key diagram as the manufacture method of the semiconductor device of embodiments of the invention 57.

Figure 149 is the key diagram as the manufacture method of the semiconductor device of embodiments of the invention 65.

Figure 150 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 58 (its 1).

Figure 151 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 58 (its 2).

Figure 152 is the key diagram as the semiconductor device of embodiments of the invention 66.

Figure 153 is the key diagram as the manufacture method of the semiconductor device of embodiments of the invention 59.

Figure 154 is the key diagram as the manufacture method of the semiconductor device of embodiments of the invention 67.

Figure 155 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 60 (its 1).

Figure 156 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 60 (its 2).

Figure 157 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 60 (its 3).

Figure 158 is the key diagram as the semiconductor device of embodiments of the invention 68.

Figure 159 is the key diagram as the manufacture method of the semiconductor device of embodiments of the invention 61.

Figure 160 is the key diagram as the semiconductor device of embodiments of the invention 69.

Figure 161 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 62 (its 1).

Figure 162 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 62 (its 2).

Figure 163 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 62 (its 3).

Figure 164 is the key diagram as the semiconductor device of embodiments of the invention 70.

Figure 165 is the key diagram as the manufacture method of the semiconductor device of embodiments of the invention 63.

Figure 166 is the key diagram as the manufacture method of the semiconductor device of embodiments of the invention 71.

Figure 167 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 64 (its 1).

Figure 168 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 64 (its 2).

Figure 169 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 64 (its 3).

Figure 170 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 64 (its 4).

Figure 171 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 64 (its 5).

Figure 172 is the key diagram as the manufacture method of the semiconductor device of embodiments of the invention 72.

Figure 173 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 65 (its 1).

Figure 174 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 65 (its 2).

Figure 175 is as the key diagram of the manufacture method of the semiconductor device of embodiments of the invention 65 (its 3).

Figure 176 is the key diagram as the semiconductor device of embodiments of the invention 73.

Figure 177 is the key diagram as the manufacture method of the semiconductor device of embodiments of the invention 66.

Embodiment

Secondly, with accompanying drawing embodiments of the invention are described.

Fig. 1～Fig. 8 shows manufacture method as the semiconductor device of embodiments of the invention 1 along manufacturing sequence, and Fig. 9 then shows the semiconductor device that the manufacture method of the semiconductor device that is used as embodiments of the invention 1 is made.

At first, with Fig. 9 (A) and (B), the semiconductor device that will become embodiments of the invention 1 10 that usefulness is shown in the manufacture method manufacturing of Fig. 1～Fig. 8 describes.Taking it by and large semiconductor device 10, is made to as by semiconductor device 11, will become extremely simply consisting of that the projection 12 of projection electrode and resin bed 13 etc. consist of.

Semiconductor device 11 (semiconductor chip) is the device that has formed circuit on Semiconductor substrate, and it assembles on the face of a side and is equipped with a plurality of projection electrodes 12.Projection electrode 12 can become the formation that by copying for example sets solder ball, plays a part external connecting electrode.In the present embodiment, the formation of projection electrode 12 is made and directly sets the electrode pad (not drawing) that is formed on the semiconductor device 11.

In addition, resin bed 13 (with the region representation of band point) is made of the thermosetting resin such as polyimides, epoxy resin (thermoplastic resins of PPS, PEK, PES and thermal endurance liquid crystalline resin etc.) etc., forms in the whole formation side of semiconductor device 11.Although the projection electrode 12 that has therefore set on the semiconductor device 11 will become the state that is sealed by this resin bed, be constituted as the head portion of projection electrode is exposed from resin bed.That is, the remaining top ends of resin bed 13 are assigned to seal projection electrode 12 and are formed on the semiconductor device like that.

Be made into the semiconductor device 10 of above-mentioned formation, will become its all size substantially with the structure of the equal-sized so-called chip size packages of semiconductor chip 11.Therefore, semiconductor device 10 can be dealt with the in the last few years needs of the miniaturization of institute's special requirement fully.

In addition, as mentioned above, semiconductor device 10 is made the structure that forms resin bed 13 in semiconductor device 11 tops, and this resin bed is made the structure of remaining head portion sealing projection electrode.Therefore, the result will become as keeping fragile projection electrode 12 with resin bed 13, so the result will become and play a part identical with used fill area (referring to Figure 78) in the prior art for this resin bed 13.

That is, by means of resin bed 13, can prevent junction between semiconductor device 11, projection electrode 12, assembling substrate 14, projection electrode 12 and the connecting electrode 15 and the destruction of the junction between projection electrode 12 and the semiconductor device 11.

Fig. 9 (B) illustrates the key diagram that semiconductor device 10 is assembled to the method that gets on of assembling substrate 14.Want that semiconductor device 10 is assembled to assembling substrate 14 and get on, locate laggard luggage with projection electrode 12 and join being formed on the connecting electrode 15 of assembling on the substrate 14.

At this moment, become such formation: before assembling is processed, in semiconductor device 10, formed resin bed 13 at semiconductor device 11 in advance.Therefore, when processing semiconductor device 10 assemblings on the assembling substrate 14, do not need fill area is filled processing between semiconductor device 11 and the assembling substrate 14, assembling is processed become easily.

In addition, when semiconductor device 10 being assembled to assembling substrate 14 gets on, get in order to make scolding tin projection electrode 12 join connecting electrode 15 to, although heat, but because the projection electrode 12 usefulness resin beds 13 that set on the semiconductor device 11 keep, even if so between semiconductor device 11 and assembling substrate 14, thermal expansion difference has occured, also can positively assemble processing.

Have again, after semiconductor device 10 being assembled on the assembling substrate 14, even if in the situation that heat and so on, even if the thermal expansion difference between semiconductor device 11 and assembling substrate 14 has occured, because projection electrode 12 is kept by resin bed 13, so also can not peel off at

projection electrode

12 and 15 of connecting electrodes.Therefore, can improve the reliability of semiconductor device 10 in assembling.

Then, with Fig. 1～Fig. 8 the manufacture method (manufacture method of embodiment 1) of the semiconductor device 10 that becomes above-mentioned formation is described.

Semiconductor device 10 is said roughly, adopts and implements semiconductor device formation operation, and projection electrode forms operation, resin-sealed operation, and the way that projection electrode exposes operation and separation circuit etc. forms.At this each in-process, semiconductor device forms operation, the operation of substrate being carried out circuit formation etc. with excimer laser technology etc., and projection electrode to form operation be by copying etc. is carrying out circuit-formed semiconductor device 11 tops and form the formation of projection electrode 12.

This semiconductor device forms operation and projection electrode formation operation is implemented with well-known technology, and key component of the present invention is after the resin-encapsulated, so determine only each operation below the resin-sealed operation to be described in the following description.

Fig. 1～Fig. 5 shows resin-sealed operation.

Resin-sealed operation can also be subdivided into installing substrate operation, and resin bed forms operation, and stripping process.If resin-sealed operation begins, at first as shown in Figure 1, employing forms the way of operation and projection electrode formation operation via semiconductor device, the substrate 16 (big circular slice) that forms a plurality of semiconductor device 11 is attached in the semiconductor device die for manufacturing 20 goes.

Here, the semiconductor device that will become embodiments of the invention 1 structure with mould 20 (below, only be referred to as mould 20) is described.

Mould 20 is said roughly by patrix 21 and counterdie 22 and is consisted of.In this patrix 21 and counterdie 22, in be provided with the heater that does not draw among the figure, constitute the formation of the sealing resin 35 that can the melting back will say.

Patrix 21 is constituted as by means of unillustrated lowering or hoisting gear arrow Z1 in the drawings, carries out lifting action on the direction of Z2.In addition, the following quilt of patrix 21 is as cavity face 21a, and this cavity face 21a is made tabular surface.Therefore, the shape of patrix 21 is made extremely simple shape, can make at an easy rate patrix 21.

On the other hand, counterdie 22 is made of the 1st half counterdie 23 and the 2nd half counterdie 24.The 1st half counterdie 23 is made the shape corresponding with the shape of substrate 16, specifically, is set to the diameter dimension slightly larger than the diameter dimension of substrate 16.Substrate 16 is mounted on the cavity face 25 on the lower surface that is formed on the 1st half counterdie 23.In the present embodiment, the 1st half counterdie 23 has been made the formation that has been fixed.

In addition, the 2nd half counterdie 24 is made the annular shape substantially that the 1st half counterdie 23 is centered on.The 2nd half counterdie 24 is constituted as by means of unillustrated lowering or hoisting gear arrow Z1 in the drawings, carries out lifting action on the direction of Z2.In addition, the internal perisporium of the 2nd half counterdie 24 is by as cavity face 26, in the prescribed limit on the top of this cavity face 26, formed inclined plane 27 with the face that improves release property.

Under the state after resin-sealed operation begins, as shown in Figure 1, the 2nd half counterdie 24 has become to the state of the 1st half counterdie 23 after up moving on the Z2 direction, therefore, the described substrate 16 in top has been mounted to because of in the 1st and the 2nd half counterdie 23, the formed recess of 24 teamworks (cavity).At this moment, substrate 16 by installing for to make the face that has formed projection electrode 12 become upside, therefore, in the installing state the projection electrode 12 of substrate 16 formation become for patrix 21 state in opposite directions.

After being attached on the counterdie 22 as above, then, when the lower film 30 of state on indeformable ground is attached on the bottom of patrix 21, sealing resin is loaded projection electrode 12 tops of substrate 16 to substrate 16.

Film 30 for example can be used polyimides, vinyl chloride, and PC, Pet, quiet decomposability resin, the paper of synthetic paper etc., metal forming, perhaps their alloy can be selected those deteriorated materials of added heat can be because of the resin forming that will say in the back time.Used film 30 is selected except above-mentioned thermal endurance in the present embodiment, have flexible material.Here said elasticity refers in the sealing that will say in the back, and the head portion of projection electrode can sink to the elasticity of the sort of degree in the film 30.

On the other hand, sealing resin 35 is polyimides for example, the resin of epoxy resin (PPS, PEEK, the thermoplastic resin of PES and thermal endurance liquid crystalline resin etc.) etc., in the present embodiment, usefulness be to be this resin forming columniform formation.In addition, the mounting position of sealing resin 35 shown in Figure 29 (plane graph of counterdie 22), is chosen to be substantially middle position.Above, be the processing of substrate installing operation.

In addition, on top in the said substrate installing operation, the moment that sets film 30 is not limited to after being attached to substrate 16 in the lower bolster 22, also can become before being attached to substrate 16 in the lower bolster 2 to have set first film 30.

As mentioned above, after substrate installing operation finishes, implement with that resin bed and form operation.After resin bed formation operation begins, confirm heating by means of mould 20 be warmed up to the temperature that can make sealing resin 35 meltings after (if in the fully little situation of the height of sealing resin 35, then do not need to confirm), make patrix 21 mobile in the Z1 direction.

Employing makes patrix 21 in the mobile way of Z1 direction, and at first, patrix 21 touches on the upper surface of the 2nd half counterdie 24.At this moment, as mentioned above, owing to having set film 30 in the bottom of upper film 21, so touch the moment of the 2nd half counterdie 24 at patrix 21, as shown in Figure 3, film 30 becomes and is clamped state between patrix 21 and the 2nd half counterdie 24.At this constantly, in mould 20, formed by above-mentioned each

cavity face

24a, 25,26 cavitys that surround 28.

In addition, sealing resin 35 has elasticity (potential energy) by means of the patrix 21 that moves in the Z1 direction by film 30 is compressed, and, be raised to the temperature that can make resin 35 meltings, so, as shown in the drawing, sealing resin 35 will become and be the state in the expansion to a certain degree of substrate 16 tops.

After patrix 21 touched the 2nd half counterdie 24, afterwards, the globality ground, state limit that clamping films 30 is kept on patrix 21 and the 2nd half counterdie 24 limit moved downward in the Z1 direction.That is, patrix 21 and the 2nd half counterdie 24 are all mobile in the Z1 direction.

To this, consist of the 1st half counterdie 23 of counterdie 22, owing to keeping the state that is fixed, so along with patrix 21 and the 2nd half counterdie 24 on the Z1 direction motion and the volume of cavity 28 is reduced, therefore, the result becomes as carrying out resin forming (this resin forming method is called the compression forming method) on cavity 28 interior compression limits in sealing resin 35 limits.

Specifically, the sealing resin 35 that has loaded the central authorities of substrate 16 softens because being heated, and, since because of moving downward of patrix 21 compressed, so, sealing resin 35 because of by patrix 21 pushing broadenings from the outside Zhou Yanzhan of middle position.Like this, set on the substrate 16 projection electrode 12 just from middle position towards the outside in turn sealed resin seal.

At this moment, if the translational speed of patrix 21 and the 2nd half counterdie 24 is fast, it is believed that then the compressive strain that compression forming produces is high, can damage at projection electrode 12, if and the translational speed of patrix 21 and the 2nd half counterdie 24 is slow, the reduction of efficient then will occur to make.Therefore, the translational speed of patrix 21 and the 2nd half counterdie 24 should be selected the suitable translational speed that the said problem in top is occured together.

Moving downward of the said patrix 21 in top and the 2nd half counterdie 24 becomes as till being crimped into the state on the projection electrode 12 that is formed on the substrate 16 being performed until compacted film 30.In addition, under film 30 had been crimped into state on the projection electrode 12, sealing resin 35 had constituted the whole projection electrode 12 and the substrate 16 that form at substrate 16 has all been sealed.Shown in Fig. 4 is that resin bed forms the state after operation finishes.In resin bed forms state after operation finishes, because film 30 is by towards the substrate crimping, so the head portion of projection electrode 12 will become the state that sinks in the film 30.In addition, adopt to make sealing resin 35 set way on whole of substrate 16, form sealing resin layers 13 at projection electrode 12.

In addition, in advance the amount of resin of sealing resin layer 35 is measured, and set, so that form the moment that operation is through with at resin bed as shown in Figure 4, the height of resin bed 13 becomes and equates with the height of projection electrode 12 substantially.As mentioned above, adopt the in advance metering of the amount of resin of sealing resin 35 is way that neither can excessive suitable amount that also can be sufficient, form in the operation at resin bed, just can prevent from from mould 20, flowing out superfluous resin 35, perhaps conversely, resin 35 few becoming as can not positively sealing such shortcoming to projection electrode 12 and substrate 16.

Resin bed is then implemented stripping process after forming the operation end.In this stripping process, at first, make patrix 21 mobile in the Z2 direction.At this moment, become the state of fixed engagement owing to having touched in the position that the 2nd half counterdie 24 has formed the sloping portion 27 of resin bed 13, therefore substrate 16 and resin bed 13 become as being held the state on the counterdie 22.Therefore, make patrix 21 under the mobile state of Z2 direction, the result will become as only patrix 21 is also up mobile from film 30 disengagings.

Then, make 24 pairs of the 1st half counterdies 23 of the 2nd half counterdie mobile a little on the Z1 direction.Turn left from the center line of Fig. 5, show patrix 21 up mobile, and the state of the 2nd half time film 24 after a little moves on the Z1 direction.As mentioned above, adopt 24 pairs of the 1st half counterdies 23 of the 2nd half counterdie in the mobile way of Z1 direction, above-mentioned sloping portion 27 and resin bed 13 are thrown off.

As mentioned above, after sloping portion 27 and resin bed 13 disengagements, next the 2nd half counterdie 24 beginning are mobile in the Z2 direction.Like this, touch at the upper surface of the 2nd half counterdie 24 that sloping portion 27 touches on the sidewall of resin bed 13 in the film 30, therefore, up mobile along with the 2nd half counterdie 24, substrate 16 just moves and produces elastic force towards the Z2 direction.

Because film 30 is being kept the state with resin bed 13 fixed engagement, therefore adopt the way that film 30 is moved and produce elastic force, the substrate 16 that has formed resin bed 13 is thrown off from the 2nd half counterdie 23.Like this, as from shown in the center line right side of Fig. 5, the demoulding is out from mould for the substrate 16 that has formed resin bed 13.

In addition, in the example of Fig. 5, although exist the part 2 that makes the 1st half counterdie 23 and resin bed 13 fixed engagement, but because of this fixed engagement part narrow, therefore a little less than the fixed engagement power, therefore adopt to make the 2nd half counterdie 24 in the mobile way of Z2 direction, just can make substrate 16 positively demoulding from the 1st half counterdie 23.

As mentioned above, in the resin-sealed operation of the present embodiment, resin bed 13 forms in the operation at resin bed and is used mould 20 compression formings.In addition, the sealing resin 35 that will become resin bed 13 is not to resemble the narrow place that is filled in the prior art (referring to Figure 78) between semiconductor device 1 and the assembling substrate 5 but by the face top that be equipped with projection electrode 12 of mounting to substrate 16, the formation mold.

For this reason, just can be forming of substrate 16 positively form resin bed 13 on whole of projection electrode 12, and can positively form resin bed 13 substantially with on the narrow part that the height of projection electrode 12 equates.Like this, owing to all positively sealed by resin bed 13 at the whole projection electrode 12 that forms at substrate 16, so can positively keep whole projection electrodes 12 with resin bed 13.Therefore, when the heating that illustrated with Fig. 9, just can positively prevent the destruction of the office, junction surface between projection electrode 12 and the assembling substrate 14, can improve the reliability of semiconductor device.

In addition, as mentioned above, the counterdie 22 that consists of mould 20 is by the 1st half counterdie 23 that has been fixed and be constituted as the 2nd half counterdie 24 that can carry out lifting to the 1st half counterdie 23 and consist of.Therefore, adopt after having formed resin bed 13, make 24 pairs of the 2nd half counterdies the 1st half counterdie 23 carry out the way of lifting action, can make mould 20 have demoulding functions, so that can easily from mould 20, take out the substrate 16 that has formed resin bed 13.After above-mentioned resin-sealed operation finishes, implement with that projection electrode and expose operation.Fig. 6 and Fig. 7 show projection electrode and expose operation.In the moment that resin-sealed operation finishes, as shown in Figure 6, film 30 has just become the state with resin bed 13 fixed engagement.In addition, owing to film 30 consists of by having flexible material, so under the state that has formed resin bed 13, the head portion of projection electrode 12 has just become the 30 li states that go of film that sink to.That is, the head portion of projection electrode 12 has become the state that is not covered by resin bed 13 (enlarging this state that shows in Fig. 6 (B)).

Projection electrode at the present embodiment exposes in the operation, shown in Fig. 7 (A), and the processing that the film 30 that is fixably attached on 1 layer 13 is peeled off from resin bed 13.Adopt in this wise the way of stripping film 30 from the resin bed 13, as enlarge in Fig. 7 (B) illustrate, the head portion that the result just becomes as becoming as the projection electrode 12 that sinks to the state in the film 30 exposes from resin bed 13.Therefore just can assemble processing with the head portion of this projection electrode that has exposed 12.

As mentioned above, to expose operation only be the simple processing that film 30 is peeled off from resin bed 13 to the projection electrode of the present embodiment.Therefore, can be easily and efficient carry out well projection electrode and expose processing.

In addition, as above film 30 is being attached to when going in the mould 20, it is without distortion that film 30 has been set, and the cavity face 24a of upper film 21 has become smooth shape.Have, film 30 has the quality of homogeneity again, in its whole elasticity with homogeneous.Therefore, in resin-sealed operation, when projection electrode 12 sank in the film 30, its amount of sinking to was homogeneous.

So, expose in the operation at projection electrode, when film 30 strips down from resin bed 13, just can make the quantitative change of exposing of the projection electrode 12 that from resin bed 13, exposes become homogeneous, make the constant quality of semiconductor device and make when assembling and the zygosity homogenization between the connecting electrode 15.

In addition, in the explanation on top, expose in the operation at projection electrode, when film 30 strips down from resin bed 13, although what illustrate is the formation that projection electrode 12 exposes from resin bed 13 fully, but under the state of peeling off lower film 30, also can become the formation that is covered by resin molding (sealing resin 35) although the head portion of projection electrode 13 is extremely thin.Employing becomes the way of this formation, because resin molding protection has the upper part of the projection electrode 13 of fragile character, so can prevent from contacting the deteriorated of oxidation of occuring and so on outer gas because of projection electrode 13.

In addition, when projection electrode 13 being assembled to assembling substrate gets on, owing to do not need this resin molding, therefore must remove.Remove the moment of this resin molding, so long as before being assembled to assembling substrate gets on, what is constantly all right.

After above-mentioned projection electrode exposes the operation end, implement with that separation circuit.

Fig. 8 shows separation circuit.Shown in figure, in separation circuit, to each semiconductor chip 11, cut off substrate 16 with section cutting tool 29 with resin bed 13.Like this, just manufactured the semiconductor device shown in Figure 9 10 that had before illustrated.

In addition, having used the slicing treatment of section cutting tool 29, is the common processing of adopting in the manufacturing process of semiconductor device, is not the processing that is attended by what special difficulty.In addition, although formed resin bed 13 on substrate 16, section cutting tool 29 has the ability that resin bed 13 also can fully cut off.

Next, with Figure 10 to describing as the manufacture method of the semiconductor device of embodiments of the invention 2 with as the semiconductor device die for manufacturing 20A of embodiments of the invention 2 (below, only be referred to as mould 20A).Also have, in Figure 10, only give identical label and omit explanation for the formation identical with the formation of the embodiment 1 that before in Fig. 1～Fig. 9, had illustrated.

At first, the mould 20A of the present embodiment described.

The mould 20A of the present embodiment says roughly, also is made of patrix 21 and counterdie 22A, and upper film 21 is identical with the formation of the relative section shown in the embodiment with the 1st half counterdie 23 that consists of counterdie 22A.Yet, in the present embodiment, have following characteristics: be provided with the residual resin of removing residual resin at the 2nd half counterdie 24A and remove mechanism 40.

Residual resin is removed mechanism 40, says roughly, and by window part 41, tank (pot) 42, and the formation such as pressure control lever 43.Window part 41 is that this window part 41 is constituted as with tank 42 and is communicated with at the window that is formed on the part of the sloping portion 27 that the 2nd half counterdie 24A forms.

Tank 42 has cylindrical conformation, in the inside of this tank 42, the pressure control lever 43 that becomes piston structure is installed as sliding.This pressure control lever 43 is connected on the driving mechanism not shown in FIG., and the Z1 that is constituted as at figure can carry out lifting action to the 2nd half counterdie 24A on the Z2 direction.

Next, to possessing the residual resin that becomes above-mentioned formation and remove the manufacture method of the mould 20A of mechanism 40 semiconductor devices that implement, embodiments of the invention 2 and describe with having.Also have, owing in embodiment 2, in semiconductor manufacturing process, having feature in resin-sealed operation, determine only this resin-sealed operation to be described.

After the resin-sealed operation of the present embodiment begins, just implement substrate 16 installing operations.In substrate installing operation, shown in Figure 10 (A), substrate 16 is attached among the mould 20A goes.

Shown in figure, under the state after resin-sealed operation has just begun, the 2nd half counterdie 24A just become for for the 1st half counterdie 23 at the mobile state of Z1 direction, consisting of residual resin, to remove that the pressure control lever 43 of mechanism then become be that the allocation on the Z2 direction is mobile.When resemble in this wise substrate 16 is attached to counterdie 22A upper after, next, on the part 24a that film 30 is set patrix 21 in, sealing resin 35 mountings are arrived projection electrode 12 tops of substrate 16 and substrate 16.

After above-mentioned substrate installing operation finishes, then implement resin bed and form operation.After resin bed formation operation began, patrix 21 became as mobile in the Z1 direction, like this, shown in Figure 10 (B), just becomes patrix 21 and contacts with the 2nd half counterdie 24A, becomes the state for clamping films 30.

At this constantly, although formed in mould 20A by each

cavity face

24a, 25,26 cavitys that fence up 28 consist of the window part 41 that above-mentioned residual resin is removed mechanism 40, then become as opened the state of window at this cavity 28.

When upper film 21 with after the 2nd half counterdie 24A contacts, afterwards, the ground that upper film 21 and the 2nd half counterdie 24A keep the state limit globality of clamping films 30 with regard to the limit moves in the Z1 direction.Like this, resin 35 just carries out resin forming on cavity 28 inner edges compression limit.

At this moment, in order to prevent must suitably to select film 21 and the speed of the 2nd half lower bolster 4A on the Z1 direction to the damage of projection electrode 12 and for potting resin 35 suitably in the whole zone of cavity 28, this point front was said.Make patrix 21 and the speed of the 2nd half counterdie 24A on the Z1 direction suitably change this part thing, in other words, be equivalent to the compression pressure of the resin 35 in the cavity 28 is suitably changed.

In the present embodiment, employing arranges the way that residual resin is removed mechanism at mould 20A, become following formation: except control patrix 21 and the speed of the 2nd half counterdie 24A on the Z1 direction, adopt the way of driving pressure control lever 43, can also control the compression pressure of resin 35.Therefore, employing reduces the way that pressure control lever 43 acts on the active force on the Z2 direction, reduce the pressure of the sealing resin 35 in the cavity 28, increase the way that pressure control lever 43 is applied to the active force on the Z2 direction and adopt, improve the pressure of the sealing resin 35 in the cavity 28.

For example, want in the amount of resin of sealing resin 35 more than the capacity of the resin bed 13 that forms, and make because of resin in the situation of the pressure rise in the cavity 28, have and to become as not carrying out the possibility of suitable resin forming, but under these circumstances, shown in Figure 10 (C), the way that the pressure control lever 43 that employing makes residual resin remove mechanism 40 moves downward in the Z1 direction just can be removed residual resin by window part 41 in tank 42.

Therefore, employing arranges the way that residual resin is removed mechanism 40, just can when the formation of resin bed 13, side by side carry out the processing of removing of residual resin, become possibility so that always carry out resin forming with set compression stress, the formation of resin bed 13 is suitably carried out.Also have, can prevent that residual resin from leaking from mould when, even if because the measuring accuracy of sealing resin 35 is low also more not serious than embodiment 1, so can also make the metering facilitation of sealing resin 35.

After resin bed forms the operation end, then implement stripping process.The action of mould 20A in this stripping process, basically the same with embodiment 1, that is, at first, make patrix 21 when the Z2 direction is mobile, a little moves on the Z1 direction for the 1st half counterdie 23 to make the 2nd half counterdie 24A.

The center line of Figure 10 (D) left side shows and makes patrix 21 mobile in the Z2 direction, and makes the state of the 2nd half counterdie 24A after a little moves on the Z1 direction., as mentioned above, adopt make the 2nd half counterdie 24A to the 1st half counterdie 23 in the mobile way of Z1 direction, just can make the sloping portion 27 and resin bed 13 disengagements of the said mistake in front.

In addition, in the situation that the present embodiment, employing arranges the way that residual resin is removed mechanism 40, the way of residual resin is removed in employing in the formation position of window part 41, although the danger that burr occurs is arranged, but this burr also can adopt the 2nd half counterdie 24A is removed in the mobile way of Z1 direction.

As mentioned above, after sloping portion 27 and resin bed 13 disengagements, then the 2nd half counterdie 24A begins in the Z2 direction mobile, therefore, when the upper surface of the 2nd half counterdie 24A touches on the film 30, sloping portion 27 touches on the resin bed 13 again, and substrate 16 moves and generation elastic force in the direction of throwing off from mould 20A.Like this, shown in the center line right side of Figure 10 (D), formed substrate 16 demoulding from mould 20A of resin bed 13.

In addition, in the manufacture method of the present embodiment, owing to when resin forming, can be controlled to be the pressure in the cavity 28 set pressure, so can prevent from resin 35, staying air, gassing.Now, if the situation of bubble has occured in resin bed 13 for hypothesis imagination, then the possibility of the damage of crackles and so on occurs in this air bubble expansion at resin bed 13 when having because of heat treated.

Yet, adopt the way that residual resin is removed mechanism is set as above, owing to can prevent gassing on resin bed 13, so the danger of damage does not occur at resin bed 13, can improve the reliability of semiconductor device 10 when heating.

Next, to the of the present invention the 3rd and the manufacture method of the semiconductor device of the 4th embodiment describe.

Figure 11 shows the manufacture method of the semiconductor device of embodiments of the invention 4.In Figure 11, only give same label and omit explanation for the formation identical with the formation of the embodiment 1 that had illustrated with Fig. 1～Fig. 9, in addition, in Figure 12, only give same label and omit explanation for the formation identical with the formation of the embodiment 2 that had illustrated with Figure 10.

Embodiment 3 and 4 manufacture method is characterized in that forming resin beds 13 without film 30.Therefore, shown in Figure 11 (A) and Figure 12 (A), in the embodiment 1 that said from the top and 2 different substrate installing operations, film 30 is not set on the part 24a of patrix 21.

Therefore, the resin bed of then implementing after substrate installing operation forms in the operation, such as Figure 11 (B), (C) and Figure 12 (B), (C) shown in, the result becomes as patrix 21 directly pushes sealing resins 35, carries out the compression forming processing.Yet, because the cavity face 24a of patrix 21 has been made tabular surface, so can under good state, carry out the forming processes of resin bed 13.Also have, the processing in the stripping process is because of identical with the processing among the embodiment 1 or 2 that the front had been said, therefore omit its explanation.

As mentioned above, even if become the formation that does not set film 30, also can form resin bed 13.But, in the manufacture method of Application Example 3 and 4, owing to do not establish film 30, therefore under the state that has formed resin bed 13, will become as projection electrode 12 being buried fully underground the state in the resin bed 13.

For this reason, the projection electrode of implementing after resin-sealed operation finishes exposes in the operation, will become the processing of exposing for the head portion that only makes projection electrode 12 for carrying out in addition.To this processing that head portion of projection electrode 12 is exposed, determine to tell about in the back for ease of explanation.

Next, manufacture method as the semiconductor device of embodiments of the invention 5 is described.

Figure 13 and Figure 14 show the manufacture method of the semiconductor device of embodiments of the invention 5.In Figure 13 and Figure 14, only give same label and omit explanation for the formation identical with the formation of the embodiment 1 that had illustrated with Fig. 1～Fig. 9.

In the manufacture method of the present embodiment, it is characterized in that: in substrate installing operation, substrate 16 is being attached to go in the mould 20 before, shown in Figure 13 (A), in the 1st half counterdie 23, installed first and gone up reinforcement plate 50.This reinforcement plate 50 is selected to have the mechanical strength of regulation and the material of thermal diffusivity, particularly, for example, is made of the sheet material of aluminum.In addition, the diameter dimension of reinforcement plate 50 is set to slightly larger than the diameter dimension of substrate 16.In addition, on the surface of this reinforcement plate 50, be coated with and applied thermosetting bonding agent (not shown in FIG. come).

The installing of the reinforcement plate 50 that has become above-mentioned formation in the mould 20, owing to being the operation that reinforcement plate 50 is configured to the 1st half counterdie 23 top only, can extremely easily carry out, also can not make the resin-sealed operation trouble that becomes even if be provided with reinforcement plate 50.

Then, the function of the reinforcement plate 50 in the resin-sealed operation described.

After substrate installing operation finished resin and forms operation and begin, as mentioned above, patrix 21 and the 2nd half counterdie 24 were mobile in the Z1 direction, utilized the encapsulation process of the projection electrode 12 that sealing resin carries out to begin.At this moment, mould 20 has been warmed up to the temperature that can make the sort of degree of sealing resin 35 meltings.In addition, the bonding agent of the thermosetting resin said of top has been chosen to be the material of thermmohardening under lower temperature.Therefore, after resin forms operation and begins, with shorter time reinforcement plate 50 just bond to carry out on the substrate 16 integrated.Also have, reinforcement plate 50 also can become the formation that bonds in advance on the substrate 16.

Yet, such as Figure 13 (B), (C) shown in, in the present embodiment, the formation of resin bed 13 also can be carried out with the compression forming method.

Forming in the method for resin bed 13 with this compression forming method, owing to pushing the resin 35 of sealing resins and melting with patrix 21, effect has large pressure on the substrate 16.

In addition, want to form resin bed 13 and must make the sealing resin melting, for this reason, in mould 20, be assembled into heater.The heat that this heater occurs also is added on the substrate 16 that has been attached in the mould 20.Therefore, substrate 16 forms the possibility that heat that the pressure that produces and heater produce is out of shape with regard to having because of above-mentioned compression.Yet, in the present invention, since in substrate installing operation before being attached to substrate 16 in the mould 20, reinforcement plate 50 has been gone up in first installing, and become this reinforcement plate 50 has been joined to formation on the substrate 16, so in resin formed operation, substrate 16 was made the formation that has strengthened with reinforcement plate 50.Therefore, even if the heat that the pressure that compression forming produces or heater produce is added on the substrate 16, also can prevent the distortion of substrate 16, thereby, the rate of finished products of the semiconductor device of manufacturing can be improved.

Shown in Figure 14 is the formation end of resin bed 13, the substrate 16 of the state from mould 20 after the demoulding.Shown in figure, from mould 20 under the state after the demoulding, reinforcement plate 50 is still being kept the state that has bonded on the substrate 16 at substrate 16.Then, form in the separation circuit (referring to Fig. 8) of implementing after operation finishes at resin, connect reinforcement plate 50 with section cutting tool 29 and cut off together.

So, just will become at each semiconductor device and be set up the formation that has also set reinforcement plate 50.In addition, as described above, because the selected good material of thermal diffusivity of reinforcement plate 50, so the result becomes as being separated into each semiconductor device postpone, reinforcement plate 50 plays a part heating panel.For this reason, can improve the thermal diffusivity of the semiconductor device made from the manufacture method of the present embodiment.

Figure 15～Figure 17 shows the variation of said each embodiment in top.In addition, in each figure, only give same label and omit explanation for the formation identical with the formation of the embodiment 1 that had illustrated with Fig. 1～Fig. 9.

Among each embodiment that on top said, as sealing resin sealing resin 35, and become substrate 16 tops that it is loaded in being attached to mould 20 and carry out resin-sealed formation.Figure 15～variation shown in Figure 17 shows the other supply form of sealing resin.

In being shown in the example of Figure 15, it is characterized in that: used laminar resin 51 as sealing resin.As mentioned above, adopt the way with laminar resin 51, just can be positively at all formation resin bed 13 of substrate 16.

In addition, in the situation of the central authorities that sealing resin 35 are configured to substrate 16 because melting resin must be from mediad end stream, therefore need long molding time.To this, laminar resin 51, owing to being set as covering the top of substrate 16, directly sealing is positioned at the projection electrode 12 of bottom therefore the resin that the result has become as melting just need not flow.For this reason, owing to can shorten the required time of resin-sealed processing, so can shorten the time of resin-sealed operation.

In addition, in example shown in Figure 16, it is characterized in that: used liquid resin 52 as sealing resin.Because the liquid resin flowability is high, so can positively seal at short notice projection electrode 12.

Also have, in the example of Figure 17, it is characterized in that: before resin-sealed operation is implemented, with bonding agent 53 sealing resin 35A is set on the film 30 first.In addition, also can become such formation: behind sealing resin melting, sealing resin 35 is set on the film 30, then, adopt again the way that makes it to solidify that sealing resin 35 is set on the film 30.

So, just can adopt and to set sealing resin 35A first on the substrate 16 but set first way on the film 30, in substrate installing operation, carry out together the installation work of film 30 and the filling operation of sealing resin 35A, make substrate installation work efficient activity.

Next, the manufacture method as the semiconductor device of embodiments of the invention 6 is described.Figure 18 shows the resin-sealed operation of embodiment 6.In addition, in Figure 18, only give same label and omit explanation for the formation identical with the formation of the embodiment 1 that had illustrated with Fig. 1～Fig. 9.

In the front, with Figure 17 to before resin-sealed operation is implemented, being illustrated in the method that only sets first a sealing resin 35A on the film 30.To this, in the present embodiment, feature is every a plurality of sealing resin 35A that set continuously in interval with regulation on film 30.In addition, also be made such formation: carry on the Handling device direction of arrow in the drawings that film 30 usefulness do not draw.

In Figure 18 (A), what be positioned at mould 20 left sides is the substrate 16 that has formed resin bed 13, adopts to make resin bed 13 be fixably attached to way on the film 30, and substrate 16 has also become the state that is attached on the film 30.In addition, the sealing resin 35A that is positioned at mould 20 inside is this less important resin that carries out encapsulation process.The sealing resin 35A that is arranged in addition mould 20 right sides is the resin that will use in this resin-sealed processing.

Be shown in the state of Figure 18 (A), show the state after substrate installing operation finishes, become substrate 16 and be mounted to the state that has gone in the mould 20.In addition, in the present embodiment, enumerated the method for installing reinforcement plate 50 before installing substrate 16.

When substrate installing operation finishes, after resin-sealed operation begins, shown in Figure 18 (B), make patrix 21 and the 2nd half counterdie 24 mobile in the Z1 direction, seal the processing of projection electrode 12 with sealing resin 35A.Then, again adopt to make patrix 21 and the 2nd half counterdie 24 in the mobile way of Z1 direction, shown in Figure 18 (C), form resin bed 13 in substrate 16 tops.

After resin-sealed operation finishes, implement the same stripping process illustrated with the previous Fig. 5 of using, make substrate 16 demoulding from mould 20 that forms resin bed 13.At this moment, as mentioned above, adopt to make resin bed 13 be fixably attached to way on the film 30, substrate 16 has also become as being mounted to the state on the film 30.

As described above, after resin-sealed operation finishes, then start the Handling device of film 30, film 30 is moved to and next sealing resin 35A is attached to the position of going in the mould 20 gets on.In addition, in the time of the carrying operation carried out with this film 30, mould 20 is attached to reinforcement plate 50 and substrate 16 (not yet forming resin bed 13) in 20 and (that is, implements substrate and install operation), in this way, again become and be the state shown in Figure 18 (A).After, repeatedly implement the processing that the top was said.

As mentioned above, if adopt the method for the present embodiment, owing to adopting first the interval with unaffected the sort of degree when the resin-sealed processing sealing resin 35A, leaving an interval sets, in the moment that resin-sealed processing is through with, film 30 is moved, automatically be attached to the way of going in the mould 20 with the sealing resin 35A that will carry out the next one resin-sealed processing, so can implement continuously resin-sealed operation, thereby can improve the manufacturing efficient of semiconductor device.

Then, manufacture method as the semiconductor device of embodiments of the invention 7 is described.

Figure 19～Figure 21 is the key diagram as the manufacture method of the semiconductor device of embodiment 7.In Figure 19～Figure 21, only give same label and omit explanation for the formation identical with the formation of the embodiment 1 that had illustrated with Fig. 1～Fig. 9.

In the manufacture method of the embodiment 1 that has on top illustrated, become following formation: selected the film that can carry out strain as film 30, therefore, make the head portion of projection electrode 12 sink to way in the film 30 during the compression forming of employing in resin-sealed operation, expose at projection electrode film 30 is peeled off from resin bed 13, the head portion of projection electrode 12 is exposed.But having the head portion that makes projection electrode 12, to sink to the selected of such flexible film 30 with suitable amount be difficult.In addition, as shown in figure 18, in also the situation of film 30 as the carrier of carrying usefulness, if with the film 30 that can carry out strain, then when carrying, will stretch, exist the possibility that to carry out validly the transportation processing of substrate 16 and sealing resin 35A.

So, for solving such problem, just be necessary with or do not carry out strain, perhaps carry out hardly the film 30 of strain (below, unified be referred to as ' inelastic deformation ').In the present embodiment, selected the material of inelastic deformation as film 30A.But, even if selected the material of inelastic deformation as film 30A, also can with in Fig. 1～Fig. 5, illustrated be implemented in the processing of carrying out in the resin-sealed operation the samely.

The projection electrode that Figure 19～Figure 21 shows in the present embodiment exposes operation.In the moment that resin-sealed operation is through with, as shown in figure 19, film 30A becomes power and has been fixably attached to state on the resin bed 13.But, because film 30A consists of with the inelastic deformation material, so under the state that has formed resin bed 13, projection electrode 12 does not become the state that has sunk in the film 30, therefore, projection electrode 12 becomes as being sealed its all states (enlarging this state that shows in Figure 19 (B)) by resin bed 13.

In this state, shown in Figure 20 (A), the processing that the film 30A that is fixably attached on the resin bed 13 is peeled off from resin bed 13.But even if peeled off lower film 30A from resin bed 13, as expansion among Figure 20 (B) illustrates, the integral body of projection electrode 12 will be kept the state that is sealed by resin bed 13.

In addition, the state that is sealed by resin bed 13 in the integral body of the projection electrode 12 shown in this Figure 20 (B) is even if formerly with Figure 11 and illustrated having implemented without film 30 of Figure 12, in the situation of the resin-sealed operation of 30A, also can occur.

So, the integral body of projection electrode 12 by resin-sealed state under, formed semiconductor device and can not carry out and assemble being electrically connected between the substrate even if it is carried out separating treatment.Therefore, must carry out the processing of exposing from resin bed 13 for the head portion that makes projection electrode 12.Figure 21 (A) shows the method for exposing from resin bed 13 for the head portion that makes projection electrode 12.

In the present embodiment, shown in Figure 21 (A), the device that exposes from resin bed 13 as the head portion that makes projection electrode 12 has used laser irradiation device 60.As laser irradiation device 60, can consider that example is such as the carbon dioxide packing laser good to the processability of resin.

In addition, the cutting depth of the resin bed 13 that carries out with laser irradiation device 60 can be adjusted with the way of the energy of suitable setting laser irradiation unit 60.The top amount of the projection electrode 12 that therefore, can from resin bed 13, expose with good precision set.

Shown in Figure 21 (A), adopt with laser irradiation device 60 in the way of resin bed 13 tops operation laser the head portion of all projection electrodes 12 is exposed from resin bed 13.Figure 21 (B) shows the laser processing processing and finish the state that the head portion of projection electrode 12 has exposed from resin bed 13.

So, employing makes the way of the processing that the head portion of projection electrode 12 exposes from resin bed 13, even if as the film of film 30A with the material of inelastic deformation, even if implemented the film 30 that need not illustrate with Figure 11 and Figure 12, in the situation of the resin-sealed operation of 30A, also can make can to assembling substrate 14 carry out that appropriate assembling processes semiconductor device.

In addition, the processing that the head portion of projection electrode 12 is exposed from resin bed 13 is not limited to Ear Mucosa Treated by He Ne Laser Irradiation, in addition, it is also conceivable that excimer laser, etching, the utilization of mechanical lapping and sandblast etc.In this case, with in the excimer laser, the head portion that can make projection electrode 12 easily and precision expose well.In addition, using etching, in the situation of mechanical lapping or sandblast, the head portion of projection electrode 12 is being exposed.

Then, with Figure 22～Figure 25 semiconductor device of the present invention another embodiment with mould is described.

Figure 22 shows semiconductor device die for manufacturing 20C as embodiments of the invention 3 (below, be called mould 20C).In addition, in following Figure 22～Figure 25 that will illustrate, only give identical label and omit explanation for the formation identical with the mould 20 of the embodiment 1 of Fig. 1.

The feature of the semiconductor device die for manufacturing 20C of the present embodiment is: on the position of substrate 16 of mounting the 1st half counterdie 23C, be provided with that to make this substrate 16 be fixed to the 1st half time film 23C upper or from the fixing or mould emptier 70 of the 1st half counterdie 23C demoulding.This is fixed or mould emptier 70 rough segmentations play cause porous member 71, the formations such as air intake and exhaust system 73 and pipeline 74.Porous member 71 such as being made of porous ceramic or Porous metal, Porous resin etc., and being constituted as gas and can passing through its inside.

Pipeline 73 is formed at the bottom of porous member 71, and this pipeline 73 is constituted as and is being connected to after the set on the air-feeding-exhausting apparatus 72.Air-feeding-exhausting apparatus 72 is for example compressor and depression generator, is constituted as pipeline 73 is being supplied with compressed-air actuated force feed pattern, and carries out hand-off process between the attraction pattern that pipeline 73 is attracted to process.

Therefore, adopt to make air-feeding-exhausting apparatus 72 become way for the force feed pattern, compressed air is just supplied with porous members 71 by pipeline 73, is ejected into the outside by porous member 71 again.At this moment, in the situation that substrate 16 loaded on the 1st half counterdie 23C, the result just becomes as substrate 16 has had elastic force at stripping direction.This state is to be shown in the state of turning right from center line in Figure 22, below, this state is called demoulding state.

On the other hand, adopt air-feeding-exhausting apparatus 72 is become as attracting the way of pattern, exhaust apparatus 72 is given by pipeline 73 and is attracted to process.So, processing the negative pressure that occurs by this attraction is made less than porous member 71.At this moment, in the situation that substrate 16 loaded on the 1st half counterdie 23C, the result just becomes as substrate 16 and is attracted to porous member 71.This state is the state that is shown in center line left side in Figure 22, below this state is called stationary state.

As mentioned above, adopt the way that fixing or mould emptier 70 are set at mould 20C, because in stationary state, substrate 16 is fixed on the 2nd half counterdie 23C, so in resin-sealed processing, can prevent from occuring at substrate 16 distortion of deflections etc.In addition, can also correct the intrinsic deflection that substrate 16 has.Have again, when becoming demoulding state, owing to substrate 16 has had from the elastic force of the 1st half counterdie 23C demoulding, so can also improve the release property that substrate 16 is deviate from from mould 20C.

It itself is the semiconductor device die for manufacturing 20D (below, be called mould 20D) of embodiment 4 of the present invention that Figure 23 shows.

In the mould 20 of the above embodiments 1, it constitutes: the 1st half counterdie 23 has been fixed, and the 2nd half counterdie 24 carries out lifting action for the 1st half counterdie 23.To this, the feature of the formation of the mould 20D of the present embodiment is: the 2nd half counterdie 24D has been fixed, and the 1st half counterdie 23 carries out lifting action for the 2nd half counterdie 24D.

As the present embodiment, even if become the 1st half counterdie 23 for the formation that the 2nd half counterdie 24D carries out lifting action, in stripping process, also can make substrate 16 demoulding from mould 20 that has positively formed resin bed 13.In addition, in Figure 23, turn left from center line that what illustrate is the moving state of the 1st half counterdie 23D, what illustrate is the state that the 1st half counterdie 23D has moved downward and turn right from center line.

Figure 24 shows semiconductor device die for manufacturing 20E as embodiments of the invention 5 (below be called mould 20E)

In the mould 20 of the embodiment 1 that on top said, become following formation: adopt the way that forms sloping portion 27 at interior all sidewalls of the 2nd half counterdie 24, improve release property.To this, the mould 20E of the present embodiment, under the state that has formed cavity 28, the area that employing becomes the top with Area Ratio the 1st half counterdie 23 that fences up with the 2nd half counterdie 24E is the way of the formation of wide part also, just can become the formation that has formed the step part 74 of rectangular shape at the position that the 2nd half counterdie 24E is connected with the 1st half counterdie 23.As mentioned above, also can improve release property even if formed step part 74 at the 2nd half point counterdie 24E.In addition, because the shape of step is rectangle substantially, so can easily carry out the formation of step part 74.

Also have, in Figure 24, be shown in the state of turning left from center line, in order to throw off the state that makes after the 2nd half counterdie 24E moves downward from resin-sealed position from resin bed 13, turning right and be shown in from center line, is to make the upper moving substrate 16 that formed resin bed 13 state after the mould 20E demoulding that makes of the 2nd half counterdie 24E.

Figure 25 shows semiconductor device die for manufacturing 20F as embodiments of the invention 6 (below, be called mould 20F).

The feature of the mould 20F of the present embodiment is: at patrix 21F, formed on the contact-making surface between counterdie 22F (the 1st half counterdie 23F, the 2nd half counterdie 24F) and the resin bed 13 to adhere to and processed film 75.This adheres to processes film 75 because be chosen to be and the inadhering material of the resin that will become resin bed 13, so when the demoulding, can make the easily demoulding from mould 20F of substrate 16 that has formed resin bed 13.

Figure 76 and Figure 77 show the variation of embodiment 6.Figure 76 is in the little situation of the area of the upper surface of Area Ratio the 2nd half counterdie 23 of substrate 16, has set the example of film 30D at the upper surface of the 1st half counterdie 23.Like this, just can reduce sealing resin 35 and the area that the 1st half counterdie 23 directly contacts, can improve release property.

Also have, in the present embodiment, in the situation that the sort of attraction of carrying out before having illustrated with Figure 22 is processed, can also be pre-formed aperture (vacuum is used the hole) at the position of necessity of film 30.

In addition, the formation that equates substantially of Figure 77 area of showing the upper surface that makes the 1st half counterdie 23 and the area of substrate 16.In each above-mentioned example, because it is little all to constitute the area of upper surface of Area Ratio the 1st half counterdie 23 of substrate 16, so when carrying out resin-sealed processing, just become as resin bed 13 and also set formation on the side locations (lateral parts) of substrate 16.

To this, the way of the formation that the area that adopts the upper surface make the 1st half counterdie 23 and the area of substrate 16 equate substantially will become as making resin bed 13 only be formed at formation on the upper surface of substrate 16.So, according to the use form of substrate 16, can be optionally only set resin bed 13 on the upper surface of substrate 16 or except upper surface, also contain in the scope of lateral parts.

Also have, in the formation of Figure 77, as the mechanism of improving release property, for patrix 21 usefulness film 30, for 22 of counterdies with adhering to and processing film 75 (referring to Figure 25).

Next, the semiconductor device as embodiments of the invention 2 and 3 is described.

Figure 26 shows the semiconductor device 10A as embodiments of the invention 2, and Figure 27 shows the semiconductor device 10B as embodiments of the invention 3.In Figure 26 and Figure 27, only give identical label and omit explanation for the formation identical with the semiconductor device 10 of the embodiment 1 of Fig. 9.

The formation of the semiconductor device 10A of embodiment 2 is: carry a plurality of semiconductor device 11 and form modularization at objective table (stage) member 80.In addition, constituting of resin bed 13: in remaining head portion sealing projection electrode 12, always be sealed to till the sidepiece of semiconductor device 11.Have, objective table 80 is formed by the good material of thermal diffusivity (for example, copper or aluminium) again.

Be made the semiconductor device 10A of above-mentioned formation, owing to having used the good material of thermal diffusivity as objective table 80, also can have kept high thermal diffusivity even if carry upper a plurality of semiconductor device 11.

In addition, the feature of the semiconductor device 10B of embodiment 3 is: in the semiconductor device 10A of Figure 26, formed burrock part 81 at the periphery sidepiece of objective table 80.The height H 2 (Figure 27, representing with arrow) that begins from the device lift-launch face of the objective table 80 of this burrock part 81 is constituted as the height H 1 (representing with arrow the figure) that begins for the device lift-launch face from semiconductor device 11 and uprises.

Have, the height H 2 that begins from the device lift-launch face of the objective table 80 of burrock part 81 is constituted as for the device lift-launch face from semiconductor device 11 and begins ormal weight of height H 3 (representing with arrow the figure) step-down till the head portion of projection electrode 12 again.

Employing becomes the way of above-mentioned formation, when in order in the recess that consists of with burrock part 80 and objective table member 81, to form resin bed 13 during potting resin, be filled into the moment till the upper part of burrock part 81 at resin, just can be left the head portion sealing projection electrode 12 of projection electrode 12.Like this, just can easily form the resin 13 of the state of the head portion that has exposed projection electrode 12.

In addition, the embodiment 2 that on top said and 3 semiconductor device 10A among the 10B, adopt the upper surface at resin bed 13 to form the way of appending wiring, just can append wiring with this a plurality of semiconductor device 11 are interconnected and functionalization.

Next, embodiments of the invention 8 are described.Figure 28 is the key diagram of manufacture method of the semiconductor device of embodiment 8, and what illustrate is the substrate 16 of the state that finished of resin-sealed operation.In addition, Figure 28 (A) is the overall diagram of substrate 16, and Figure 28 (B) is the local expanded view of substrate 16.In addition, in Figure 28, only give identical label and omit explanation for the formation that the formation that illustrated with embodiment 1 with Fig. 1～Fig. 9 is identical.

In the manufacture method of the semiconductor device of the embodiment 1 that on top said, it constitutes: resin bed 13 is formed by single kind sealing resin 35., require all functions for this resin bed 13, for example from protection substrate 16 these tops, wish that resin bed 13 is hard resins, see and wish that then resin bed 13 is soft resins from relaxing the angle that is added to the stress on the projection electrode 12 when the assembling etc.But satisfying whole requirements with the resin of single kind is impossible actually.

So the feature of the present embodiment is: as resin used in resin-sealed operation, used the multiple sealing resin with different characteristics, therefore formed the resin bed 13A of multiple (being 2 kinds in the present embodiment), 13B.In being shown in the example of Figure 28, what illustrate is that resin bed 13A and resin bed 13B are piled up the structure that carries out behind the lamination.

So, want to form multiple resin bed 13A, 13B, in resin-sealed operation, at first, filling will become the sealing resin of resin bed 13A to form resin bed 13A in the mould, then, filling will become the sealing resin of resin bed 13B to form resin bed 13B in the mould.Perhaps, also can make in advance on the lamination of the top of the resin bed that will become resin bed 13A, will to become the sealing resin of structure of the sealing resin of resin bed 13B, with the method for once resin-sealed processing together landform resin layer 13A and 13B.

Employing resembles the present embodiment like this at the multi-layer resinous layer of substrate 16 superimposed layers 13A, and the way of 13B just can for example be used as hard resin the resin bed 13B that is positioned at the outside, and soft resin is used as the resin bed 13A that is positioned at the inboard.In the situation of making such formation; substrate 16 will become uses consisting of that the resin bed 13B that is made of hard resin positively protects; in addition, when assembling etc., the stress that is added on the projection electrode 12 then can absorb with the resin bed 13A that is made of soft resin.Therefore, can improve the reliability of the semiconductor device made from the present embodiment.

Then, embodiments of the invention 9 are described.

Figure 29 be for the semiconductor making method of explanation embodiment 9 key diagram, in Figure 29, only give identical label and omit explanation for the formation that the formation of the embodiment that illustrated with embodiment 1 with Fig. 1～Fig. 9 is identical.

In the present embodiment, although the embodiment that said with the top is the same, its feature also is: as sealing resin used in resin-sealed operation, with having a multiple sealing resin (being 2 kinds in the present embodiment) of different characteristics, but, to make mutually different resin bed 13A in above-described embodiment 8,13B carries out the structure behind the lamination, and in the present embodiment, then resin bed 13B is set on the circumferential position of substrate 16, resin bed 13A is set the locational structure (referring to Figure 29 (C)) that is fenced up by resin bed 13B.Below, the manufacture method of the semiconductor device in the present embodiment is described.

Figure 29 (A) illustrates is resin-sealed operation in the manufacture method of semiconductor device of the present embodiment.Used mould 20G in the resin-sealed operation of the present embodiment, although the structure that has the mould 20 that illustrated with Fig. 1 in embodiment 1 has become the structure that turns upside down, but for convenience of explanation, each of mould 20G consists of, and uses label and the title corresponding with the mould 20 that illustrated in embodiment 1 to represent.In addition, in the present embodiment, the embodiment 5 that said with the front is the same, has become the structure with reinforcement plate 50.Reinforcement plate 50 has been installed on the 1st half counterdie 23, and on the lower surface (with substrate 16 face in opposite directions) of reinforcement plate 50, has then set in advance the sealing resin 35A that will become resin bed 13A and the sealing resin 35B that will become resin bed 13B.This sealing resin 35B that will become resin bed 13B is equipped on the circumferential position of reinforcement plate 50, and the sealing resin 35A that will become resin bed 13A then is provided in its inside, so that sealed resin 35B fences up.Have, the substrate 16 that has formed projection electrode 12 is loaded in patrix 21 tops by film 30 again.

Being equipped with substrate 16 and sealing resin 35A, when the reinforcement plate 50 of 35B was attached in the mould 20G, the 1st half counterdie 23 just moved towards patrix 21, thereby implemented sealing resin 35A when as above, and the compression forming of 35B forms resin bed 13A, 13B.At this moment, because as mentioned above, sealing resin 35B is equipped on the circumferential position of reinforcement plate 50, sealing resin 35A is then set as sealed resin 35B and is fenced up, so under the in type state of resin, resin 13B is formed on the circumferential position of substrate 16, and resin bed 13A then is formed sealed resin 13B and fences up.

After above-mentioned resin-sealed operation finishes, shown in Figure 29 (B), just implement projection electrode and expose operation and remove film 30, form the semiconductor device 10C that is shown in Figure 29 (C) with this.

If adopt above-mentioned manufacture method, the resin bed 13B as on the circumferential position that will be set substrate 16 (semiconductor device) for example can select hard resin, then can select soft resin as the resin bed 13A that is centered on by this resin 13B.Like this, owing to will become consisting of that resin bed 13B that its periphery sidepiece is made of hard resin centers on the semiconductor device 10C of the present embodiment manufacturing, so will become the structure of positively being protected by this resin bed 13B for substrate 16 and reinforcement plate 50.Thereby, can improve the reliability of semiconductor device 10C.

In addition, be positioned at the resin bed 13A of the inboard of resin bed 13B, owing to forming with soft resin, even if therefore in when assembling etc. projection electrode 12 has been added stress, because this stress also can be absorbed in the resin bed 13A that is made of soft resin, so can relax the stress that is added on the projection electrode 12.Like this, even if because of this point, also can improve the reliability of semiconductor device 10C.

Then, embodiments of the invention 10 and embodiment 11 are described.

Figure 30 is the key diagram for the manufacture method of the semiconductor device of explanation embodiment 10, and Figure 31 is the key diagram for the manufacture method of the semiconductor device of explanation embodiment 11.In Figure 30 and Figure 31, only give identical label and omit explanation for the formation that the formation of the embodiment 9 that illustrated with the embodiment 1 that illustrated with Fig. 1～Fig. 9 with Figure 29 is identical.

In the manufacture method of the embodiment 10 that is shown in Figure 30, the embodiment 9 that said with the front is the same, and feature is: in resin-sealed operation, sealing resin 35 is set on the reinforcement plate 50 in advance.In addition, in the manufacture method of the embodiment 11 that is shown in Figure 31, feature is: frame part 54 integraty when being set on the reinforcement plate 50, sealing resin 35 is set on the reinforcement plate 50 in advance.

So, adopt in resin-sealed operation, in advance sealing resin 35 is set reinforcement plate 50, the way on the 50A, according to can be reinforcement plate 50,50A be as the part of mould 20G.Specifically, just can be increasing plate 50,50A is as the part of the 1st half counterdie 23.

By means of this, just can reduce sealing 135 areas that directly touch on the 1st half counterdie 23 (mould 20G), just can not want the operation of removing that has been attached to the useless resin on the needed mould in the prior art, just can simplify the operation in the resin-sealed operation.

Particularly in the manufacture method of embodiment 11, adopt the way that framework 54 is set at reinforcement plate 50, just can form recess 55 in substrate 16 position in opposite directions with reinforcement plate 50A, just can be this recess 55 as cavity.In the formation of having used flat reinforcement plate 50 shown in Figure 30, sealing resin 35 has touched the 2nd half counterdie 24, and the operation of removing of the useless resin on this contact portion just becomes as necessary.

But, if be used in embodiment shown in Figure 31 11, then can become the formation that makes sealing resin 35 not touch mould 20G fully, therefore just can not want the operation of removing of the useless resin that has been attached on the mould 20G fully.

In addition, in the

above embodiments

10 and 11, adopt with the good material of thermal diffusivity and form reinforcement plate 50, the way of 50A can also improve semiconductor device 10D, the heat dissipation characteristics of 10E.In addition, Figure 30 (B) shows the semiconductor device 10D that makes with the manufacture method of embodiment 10, and Figure 31 (B) shows the semiconductor device 10E that makes with the manufacture method of embodiment 11.

Embodiments of the invention 12 then are described.

Figure 32 and Figure 33 are the key diagrams of manufacture method of the semiconductor device of embodiment 12.In Figure 32 and Figure 33, only give identical label and omit explanation for the formation that the formation that illustrated with embodiment 1 with Fig. 1～Fig. 9 is identical.

The feature of the manufacture method of the present embodiment is: in the sealing resin operation, each embodiment that at first said with the front is the same, form resin bed 13 (the 1st resin bed) on the surface of the substrate 16 that has formed projection electrode 12 afterwards, formed the 2nd resin bed 17 at the back side of substrate 16.Below, with Figure 32 and Figure 33 the concrete resin-sealed processing in the present embodiment is described.

Figure 32 (A)～Figure 32 (B) show 13 compression formings of the 1st resin bed to forming of substrate 16 the lip-deep operation of projection electrode 12.In the processing shown in this Figure 32 (A)～Figure 32 (B), and in embodiment 1, be identical processing with the illustrated processing of Fig. 1～Fig. 4.Therefore, omit the explanation that the formation of the 1st resin bed 13 is processed.

When adopting the way of implementing the processing among Figure 32 (A)～Figure 32 (B), after the surface of substrate 16 (projection electrode formation face) forms the 1st resin bed 13, from mould 20, take out substrate 16, refill after turning upside down to be set in the mould 20 and go.That is, so that the face that has formed projection electrode 12 of substrate 16 and the 1st half counterdie 23 are attached to substrate 16 in the mould 20 in opposite directions goes like that.Then, shown in Figure 33 (D), the 2nd sealing resin 36 is loaded on the upper surface of the substrate 16 that is loaded the 1st half counterdie 23 top.

Then, shown in Figure 33 (E), adopt the way that patrix 21 and the 2nd half counterdie 24 are moved downward, compression forming the 2nd sealing resin 36.By means of this, shown in Figure 33 (F), a side also forms the 2nd resin bed 17 at the back side of substrate 16.

Figure 33 (G) shows the produced semiconductor device 10E of manufacture method with the present embodiment.Shown in figure, the formation of semiconductor device 10E is: the lip-deep while of the 1st resin bed 13 compression formings to the substrate 16 (semiconductor chip) that has formed projection electrode 12, and compression forming the 2nd resin bed 17 on the back side of substrate 16.

As mentioned above, employing is in resin-sealed operation, after the surface of the substrate 16 that has set projection electrode 12 has formed the 1st resin bed 13, the way that the back side of this substrate 16 is covered forms the 2nd resin bed 17 so that just can make the balance of the semiconductor device 10E of manufacturing become good.

Namely, because substrate 16 (semiconductor device) is different from the sealing resin coefficient of thermal expansion, only setting in the formation of the 1st resin bed 13 on the surface of substrate 16 (having formed projection electrode 12), just having the possibility that deflections occurs because of surface and back side generation thermal expansion rate variance at substrate 16 at substrate 16.Yet, as the manufacture method of the present embodiment, adopt the way of all using

resin bed

13,17 to cover to the surface of substrate 16 and the back side, just can make the balance of semiconductor device 10E become good.Like this, just can prevent from semiconductor device 10E deflection occuring in when heating etc.

In addition, in manufacture method of the present invention, the 1st resin bed 13 that can also set the surface at substrate 16 is chosen to be the resin with different characteristics with the 2nd resin bed 17 that the back side at substrate 16 sets.For example, adopt the way that soft resin is chosen to be the 1st resin bed 13, just can relax the stress that is added on the projection electrode 12.

In addition, adopt the way that hard resin is chosen to be the 2nd resin bed 17 that is equipped on the back side, just can positively protect substrate 16 in the situation that added external force.Have again, adopt the way that the good resin of thermal diffusivity is chosen to be the 2nd resin bed 17, just can improve the thermal diffusivity of semiconductor device 10E.

Then, embodiments of the invention 13 are described.

Figure 34 is the key diagram of manufacture method of the semiconductor device of embodiment 13.In Figure 34, for illustrated with Fig. 1～Fig. 9 embodiment 1, use Figure 32, the embodiment 12 identical formations that Figure 33 illustrated are only given identical label and are omitted explanation.

Also be in the manufacture method of the present embodiment when the surface of the substrate 16 that has formed projection electrode 12 has formed the 1st resin bed 13, form the 2nd resin bed 17 at the back side of substrate 16.But in the manufacture method of the embodiment that illustrated with Figure 32 and Figure 33, at first, adopt the way of the operation of implementing Figure 32 (A)～Figure 32 (C), form the 1st resin bed 13, secondly, employing is taken out the substrate 16 that has formed the 1st resin bed 13 and is made it to turn upside down from mould 20, implement the way of the operation of Figure 32 (D)～Figure 32 (F) above that again, forms the 2nd resin bed 17.Therefore, in the manufacture method of embodiment 12, need to carry out 2 times compression forming, the manufacturing efficient of not talkative semiconductor device 10E is good.

So the feature of the manufacture method of the present embodiment is: so that just can form simultaneously the 1st and the

2nd resin bed

13 and 17 with compression forming once.For this reason, in the present embodiment, become following formation: in resin-sealed operation, substrate 16 is attached to go in the mould 20 when, shown in Figure 34 (A), at first after being attached to the 2nd sealing resin 36 on the substrate 16, refilling and establish substrate 16 so that load on the 2nd sealing resin 36, set at an upper portion thereof again the 1st sealing resin 35.At this moment, the 2nd sealing resin 36 is contacted with the back side of substrate 16, and loaded the 1st sealing resin 35 in forming of substrate 16 on the surface of projection electrode 12.

Figure 34 (B) shows the state of implementing compression forming.Shown in figure, because the state that substrate 16 is clipped in the middle by the 1st sealing resin 35 and the 2nd sealing resin 36, so, on the surface and the back side of substrate 16, can while compression forming sealing resin 35,36.In addition, Figure 34 (C) shows compression forming to be finished, and has formed the 1st resin bed 13 on the surface of substrate 16, has formed the state of the 2nd resin bed 17 on the back side of substrate 16.

In addition, Figure 34 (D) is the semiconductor device made from the manufacture method of the present embodiment, and it consists of formation with the semiconductor device 10E of manufacturing in embodiment 1 identical (semiconductor device with the manufacture method manufacturing of the present embodiment also represents with label 10E).As mentioned above, because in the manufacture method of the present embodiment, do not need to resemble the operation that substrate 16 is turned upside down the manufacture method of embodiment 12, can process with compression forming once and form together the 1st resin bed 13 and the 2nd resin bed 17, so can improve the manufacturing efficient of semiconductor device 10E.

Then, embodiments of the invention 14 are described.

Figure 35 is the key diagram of manufacture method of the semiconductor device of embodiment 14.In Figure 35, for illustrated with Fig. 9 the identical formation of embodiment 1 only give identical label and omit explanation.

In each embodiment that the front was said, the example of having enumerated spherical projection electrode as projection electrode is illustrated, but in the present embodiment, it is characterized in that: used upright projection electrode 18 as projection electrode.This upright projection electrode 18 has cylindrical shape, can form with for example galvanoplastic.As mentioned above because upright projection electrode 18 has cylindrical shape, so be made spherical projection electrode 12 ratios, the area of its head portion broadens.

As the present embodiment, even if being made for upright projection electrode 18, the structure of projection electrode also can use the same processing of each embodiment of saying with the top, carry out resin-sealed operation and projection electrode and expose operation.Figure 35 (A) (B) shows in resin-sealed operation, and the substrate 16 that has formed upright projection electrode 18 has been attached to state in the mould 20 (not drawing).In addition, Figure 35 (B) is the local expanded view of Figure 35 (A).In this installing state, will be at the head portion installing film 30A of upright projection electrode 18.

This film 30A is identical with the formation of film shown in Figure 9, is constituted as and is not easy to carry out strain.The way of resin-sealed processing, compression forming resin bed 13 between the surface of film 30A and substrate 16 are implemented in employing for the substrate 16 of this state.

After resin-sealed operation finishes, shown in Figure 35 (C), carry out the processing of peeling off the film 30A that is fixably attached on the resin bed 13 from resin bed 13 (with the region representation of band point).But even if peeled off film 30A from resin bed 13, as expansion among Figure 35 (D) illustrates, upright projection electrode 18 is removed outside its head portion, still keeps the state that has been embedded in the resin bed 13.

; in the embodiment 7 that had before illustrated with Figure 19～Figure 21; because projection electrode 12 has been made spherical; therefore under it all has been sealed in state in the resin bed 13; the area that exposes from resin bed 13 is little, therefore will carry out the sort of processing that projection electrode 12 is exposed shown in Figure 21 from resin bed 13.

To this, thus in the present embodiment since usefulness be that the area with head portion that the upright projection electrode 18 of cylindrical shape exposes from resin bed 13 broadens.Therefore, shown in Figure 35 (D), even if only keep constant from the state that resin bed 13 strips down film 30A, also can be electrically connected fully.Like this, just no longer need to the necessary processing that projection electrode 12 is exposed from resin bed 13 in the situation with spherical projection electrode 12, the manufacturing process that can simplify semiconductor device.

In addition, in the present embodiment, in the situation that needs further improve being electrically connected property, also can implement the processing that upright projection electrode 18 is exposed from resin bed 13.Also have, in the following description, be defined in the situation of only saying projection electrode 12, refer to the general name of spherical projection electrode 12 and upright projection electrode 18, in the situation that needs individually illustrate, then separate and be referred to as spherical projection electrode 12, upright projection electrode 18.

Next, embodiments of the invention 15 are described.

Figure 36 is the key diagram of manufacture method of the semiconductor device of embodiment 15.In Figure 36, for illustrated with Fig. 1～Fig. 9 embodiment 1, only give identical label and omit explanation with the embodiment 14 identical formations that Figure 35 illustrated.

In the manufacture method of the present embodiment, feature is: adopting the enforcement projection electrode to expose the way of operation, what make projection electrode 12 is after head portion exposes from resin bed 13 at least, connect as the outside of another projection electrode with projection electrode (below, be referred to as outside the connection to use projection electrode) 90 also forming on the head portion of this projection electrode 12 (usefulness is upright projection electrode 18 in the present embodiment).

This outside connects with projection electrode 90 employings implements the outside way formation that forms operation with projection electrode that connects.This outside connection forms operation with projection electrode, can use the projection electrode formation technology of common enforcement, can answer by copying, galvanoplastic, or dull and stereotyped (dimpleplate) method of indenture etc.Like this, after having implemented projection electrode and exposing operation, implement this outside and connect the way that forms operation with projection electrode, just can form at the head portion of upright projection electrode 18 and outside the connection use projection electrode 90.

As shown in this embodiment, employing is being implemented after projection electrode exposes operation, implement outside the connection to form operation with projection electrode, head portion at upright projection electrode 18 forms the outside way that connects with projection electrode 90, just can improve in the assembling that semiconductor device is assembled to when assembling substrate and getting on.

That is and since projection electrode 12 be formed on form with substrate 16 (semiconductor chip) on the electrode top, so its shape will diminish inevitably.So, this little projection electrode 12 as the situation that is electrically connected to the external connection terminals on the assembling substrate under, just exist the possibility that assembling substrate and projection electrode 12 can not positively be connected.

Yet, the outside that arranges in the present embodiment connects with projection electrode 90, because and the projection electrode 12 that has been formed on the substrate 16 separates, can not affect substrate 16 and projection electrode 12 (but need to be electrically connected with projection electrode 12) so can freely design, the formation that can be applied to the assembling substrate gets on.So, adopt the head portion at projection electrode 12 to set the outside way that connects with projection electrode 90, just can improve to be provided with and outsidely connect with the semiconductor device of projection electrode 90 and assemble assembling between the substrate.

Secondly, embodiments of the invention 16 are described.

Figure 37 is the key diagram of manufacture method of the semiconductor device of embodiment 16.In Figure 37, for illustrated with Fig. 1～Fig. 9 embodiment 1, only give identical label and omit explanation with the embodiment 15 identical formations that Figure 36 illustrated.

In the present embodiment, feature is: connect with projection electrode and form in the operation forming the outside outside that connects with projection electrode 90, with the grafting material 91 with stress alleviating function (below, be called stress and relax material) projection electrode 12 is connected with projection electrode engages with the outside.In addition, in the present embodiment, another feature is: connect as the outside and used post (pole) shape electrode 92 with projection electrode.

Stress relaxes grafting material 91, can use to have ratio such as the scolding tin of high fusion point also of added temperature when the assembling.In addition, for example can use the palladium silk as columnar electrode 92.Projection electrode 12 relaxes grafting material 91 with columnar electrode 92 usefulness stress and engages.In addition, because scolding tin is more soft metal, so on the bonding station between projection electrode 12 and the columnar electrode 92, adopt to make to consist of the way that stress relaxes the scolding tin distortion of grafting material 91, just can absorb the stress that is added on the columnar electrode 92.

If employing the present embodiment, because having the stress mitigation grafting material of stress alleviating function, projection electrode 12 and columnar electrode 92 usefulness engage, even if so added external force at columnar electrode 92, stress has occured, this stress also can be relaxed grafting material by stress and relax, and can prevent from being delivered to projection electrode 12 and get on.Like this, just can prevent from damaging at substrate 16 (semiconductor device) with external stress, therefore can improve the reliability of the semiconductor device of manufacturing.

In addition, adopt columnar electrode 92 as the outside way that connects with projection electrode, with spherical electrode ratio, just can improve and external connection terminals (external connection terminals of assembling substrate one side or experimental rig one side) between connection status become good.

In addition, spherical electrode is difficult to form, and is easy to produce heterogeneity at height (diameter), but will with filamentous columnar electrode, then can obtain with good precision the electrode of same length, thereby can prevent inhomogenous generation.Have, columnar electrode 92 is owing to can flexibly carrying out the buckling distortion, therefore columnar electrode 92 itself also has the function that relaxes stress again.The mitigation of the stress in the time of therefore, can more positively carrying out the external force input.

Then, embodiments of the invention 17 are described.

Figure 38 is the key diagram of manufacture method of the semiconductor device of embodiment 17.In Figure 38, for illustrated with Fig. 1～Fig. 9 the identical formation of embodiment 1 only give identical label and omit explanation.

Among the embodiment 1 that on top said, for projection electrode 12 is exposed from resin bed 13, selected resilient material as film 30, and film 30 is being set moment on the projection electrode 12, the head portion of projection electrode 12 is sunk in the film 30 go, so, as shown in Figure 7, in the moment of peeling off lower film 30, the head portion of projection electrode 12 is exposed from resin bed 13.But in the method for this embodiment 1, the head portion that exists the projection electrode 12 that exposes from resin bed 13 diminishes, and reduces and assemble the possibility of the electrical connection between the substrate.

On the other hand, in the embodiment 7 that the front was said, as film 30A, selected the material of hard, become in the moment of peeling off lower film 30A, the state that the head portion of projection electrode 12 does not expose from resin bed 13 is for the head portion that makes projection electrode 12 exposes from resin bed 13, as shown in Figure 7, used the method that makes it to expose with laser irradiation device 60 grades.Yet, with the method for embodiment 7, expose from resin bed 13 in order to make projection electrode 12, huge equipment need to be arranged.

So in the present embodiment, shown in Figure 38 (A), feature is: in resin-sealed order, in the time of as the film of the selected hard material of film 30B, used forming the film of protuberance 19 with projection electrode 12 position in opposite directions of this film 30B.Below, the resin-sealed operation of having used the film 30B that is formed with this protuberance 19 is described.In Figure 38, do not draw mould.

Figure 38 (B) shows substrate 16, and sealing resin 35 and film 30B are attached to the state in the mould.In this state, the protuberance 19 that has formed film 30B is positioned as and is formed on the substrate 16 projection electrode 12 in opposite directions.In addition, film 30B is formed by the resin material of hard, and protuberance 19 is formed by more soft resin material.That is, in the present invention, film 30B consists of (also can become in addition, the integrated formation with same material) with protuberance 19 by different materials.

Figure 38 (C) shows over against sealing resin 35 and carries out the state that compression forming is processed.The protuberance 19 that has been formed on the film 30B when this compression forming is processed has become the state that is pushed on the projection electrode 12.Therefore, concerning the zone of protuberance 19 pushing projection electrodes 12, sealing resin 35 can not be attached on the projection electrode 12.And, because protuberance 19 usefulness soft resins consist of, adopt to make protruding 19 ways of carrying out the flexible distortion, just can make the contact area hem width between projection electrode 12 and the protuberance 19.

Figure 38 (D) shows projection electrode and exposes operation, and what illustrate is to get on except the state of film 30B from substrate 16.As previously mentioned, in the zone of protuberance 19 pushing projection electrodes 12, owing to sealing resin is not attached on the projection electrode 12, so under the state of having removed film 30B, this zone will become has revealed state out from resin bed 13.And in the present embodiment, the area that projection electrode 12 exposes from resin bed 13 broadens than with the method for the embodiment 1 that the front was said.

Therefore, if adopt the manufacture method of the present embodiment, needn't just can be easily and projection electrode 12 is exposed from resin bed 13 with huge equipment.In addition, because the area that can expose from resin bed 13 is wide, for example, shown in Figure 38 (E), connect with in the situation of projection electrode 90 even if at the head portion at projection electrode 12 outer electrode is set, projection electrode 12 and outside the connection with projection electrode 90 are engaged.

Then, embodiments of the invention 18 are described.

Figure 39 and Figure 40 are the key diagrams of manufacture method of the semiconductor device of embodiment 18.In Figure 39 and Figure 40, only give identical label and omit explanation for the formation identical with the embodiment 1 that illustrated with Fig. 1～Fig. 9.

In the present embodiment, be characterised in that formation method and the structure thereof of the projection electrode 12A that will be formed on the substrate 16.This projection electrode 12A is formed at lip-deep connecting electrode 98 tops of being located at substrate 16.Want to form projection electrode 12A, at first will form on the top of connecting electrode 98 core 99 (with the region representation of band point).This core 99 is formed by resilient resin (for example, polyimides etc.).

Concrete method as the 98 tops formation core 99 in the coupling part, at first, to become the resin (photosensitive polyimides) of core 99 in whole coating of substrate 16, make it to become the thickness of regulation, then remove the resin of connecting electrode 98 position in addition with photoetching technique.Like this, just can form in connecting electrode 98 tops core 99.

Next, form conducting film 100, so that all surfaces of this core 99 is all covered.This conducting film 100 can form with the film formation technology of galvanoplastic and sputtering method etc., and its substrate one side end and connecting electrode 98 are electrically connected.As the material of conducting film 100, can select the flexible while that has to a certain degree, also have the metal of low resistance.Adopt the way of implementing above processing, just can form projection electrode 12A.In addition, 102 among the figure is dielectric films.

As what find out from above-mentioned explanation, the formation of projection electrode 12A is: 99 surface has formed conducting film 100 in the core.As mentioned above, core 99 has elasticity, and conducting film 100 is also formed by the flexible material that has to a certain degree, so to projection electrode 12A stress is occuring such as External Force Actings such as whens assembling, this stress also can carry out strain and is absorbed by means of core 99 and conducting film 100.Therefore, can prevent that this stress is added on the substrate 16, can be suppressed on the substrate 16 and damage.

At this, projection electrode 12A is described the height of resin bed 13.Figure 39 (A) illustrates is that the head portion of projection electrode 12A is than resin bed 13 outstanding formation outward also.In this consists of, wide owing to what expose from resin bed 13 owing to projection electrode 12A, so in the situation that be provided with outside the connection with projection electrode 90, projection electrode 12A broadened with outside the connection with the bonding area between the projection electrode 90, so that projection electrode 12A and outside the connection with projection electrode 90 are engaged.

In addition, Figure 39 (B) shows the surface of projection electrode 12A and resin bed 13 is become conplane formation.Semiconductor device with this formation can be used as the semiconductor device that LCC (leadless chip carrier, Wireless Chip Carrier) constructs, and can improve packaging density.

In addition, Figure 39 (C) head portion of showing projection electrode 12A is in than resin bed 13 low locational formation also.Therefore, formed for the recess 101 that projection electrode 12A is exposed at resin bed 13.In this consists of, in the situation that be provided with outside the connection with projection electrode 90, because recess 101 plays a part to carry out the outside location that connects with projection electrode 90, so with the constituent ratio that is shown in Figure 39 (A), can easily carry out projection electrode 12A and be connected with the localization process between the projection electrode 90 with outside.

On the other hand, in the present embodiment, as shown in figure 40, become the formation that the connecting electrode 98 being located at the electrode pad 97 on the substrate 16 (semiconductor chip) and will forming projection electrode 12A is separated, becoming is formation with lead-out wiring 96 connecting electrode pads 97 and connecting electrode 98.

As shown in figure 39, on the head portion of projection electrode 12A, be provided with outside the connection with in the formation of projection electrode 90, from improving the assembling aspect, generally the outside connected and set greatlyr than projection electrode 12A with projection electrode 90.Therefore, in the little situation of distance between the adjacent step pitch of projection electrode 12A, exist the outside that can make disposed adjacent and connect the danger that contacts with each other with projection electrode 90.

So, in being shown in the example of Figure 40, adopt the way with lead-out wiring 96 connecting electrode pads 97 and connecting electrode 98, strengthened the step pitch of the connecting electrode 98 that will form.So, just can avoid disturbing with 90 of projection electrodes in adjacent outside connection.

Next, embodiments of the invention 19 are described.

Figure 41 is the key diagram of manufacture method of the semiconductor device of embodiment 19.In Figure 41, only give identical label and omit explanation for the formation identical with the embodiment 1 that illustrated with Fig. 1～Fig. 9.

In the manufacture method of embodiment 19, shown in Figure 41 (A), before implementing resin-sealed operation, (among the figure, with dashed lines X represents will to cut off the position of substrate in the separation circuit that implement the back.Below, be called off-position) on, the lower wider off-position ditch 105 of Width formed first.The width dimensions that the width dimensions of this off-position ditch 105 is set at least the section cutting tool 29 that will say than the back is large.

In addition, in the resin-sealed operation of then implementing, when forming resin bed 13, in this off-position ditch 105, also fill sealing resin 35 formation off-position resin beds 106.Then, in the separation circuit of implementing after resin-sealed operation finishes, shown in Figure 41 (B), the off-position X place in the off-position ditch 105 of having filled off-position resin bed 106 cuts off substrate 16 with section cutting tool 29.

If adopt the manufacture method of the said the present embodiment in top, then in separation circuit, can prevent from substrate 16 and resin bed 13 crackle occuring.It is the reasons are as follows.

A kind of formation that does not form the off-position ditch of now supposition imagination, then the result will become in separation circuit, cut off the substrate 16 that has formed thinner membranaceous resin bed 13.Used the cut-out of section cutting tool 29 to process and to be added to large stress on the substrate 16.Therefore, if use this cutting-off method, then can have thin resin bed 13 is stripped down from substrate 16, the danger that perhaps cracks at resin bed 13 and substrate 16.To this, if the manufacture method with the present embodiment, employing forms the wide way of cutting end position ditch 105 of width at off-position X place, the result will become as separating among the worker at chip, cut off processing in the off-position ditch 105 that has formed off-position resin bed 106.At this moment, the become thickness of the resin bed 13 that forms than the position at other of the thickness of off-position resin bed 106 is thick, its mechanical strength grow.And, because off-position resin bed 106 and substrate 16 are than having flexibility, so play a part the stress that absorption occurs.

So, owing to because cut off processing the stress that occurs under the state that the absorption that is cut off position resin bed 106 weakens, be added on the substrate 16, so can prevent from resin bed 13 and substrate 16 crackle occuring, can improve the fabrication yield of semiconductor device.

In addition, shown in Figure 41 (C), in the moment separation circuit finishes, will become the formation that off-position resin bed 106 has exposed on the side of substrate 16.Therefore, become as protect the formation of the sidepiece of substrates 16 with off-position resin bed 106, can suppress the situation that substrate 16 directly is subjected to the impact of external environment condition.

Also have, in the transportation processing of semiconductor device, used handler, this handler also can be constructed to control the part of having exposed of off-position resin bed 106, like this, just can prevent from injuring substrate 16 because of the loading and unloading processing.

Next, embodiments of the invention 20 are described.

Figure 42 is the key diagram of manufacture method of the semiconductor device of embodiment 20.In Figure 42, for the embodiment 1 that illustrated with Fig. 1～Fig. 9, only give identical label and omit explanation with the embodiment 19 identical formations that illustrated with Figure 41.

In the manufacture method of above-described embodiment 19, although become the formation that has formed off-position ditch 105 at off-position X place, but in the manufacture method of the present embodiment, shown in Figure 42 (A), feature is: the off-position X that cut off substrate 16 is clipped in the middle has formed counter stress mitigation ditch 110a, 110b.Therefore, the result becomes as in separation circuit, and the position of relaxing between structure 110a, the 110b at a counter stress cuts off substrate 16.

In addition, adopt to form the way that a counter stress relaxes

ditch

110a, 110b, in resin-sealed operation, shown in Figure 42 (B), the inside formation stress that relaxes

ditch

110a, 110b at stress relaxes resin bed 111a, 111b.This stress relaxes

resin bed

111a, 111b than the thickness thickening of the resin bed 13 that forms in other parts, its mechanical strength grow.And, because stress relaxes

resin bed

111a, 111b and substrate 16 than having flexibility, so have the function of the stress that absorption occurs.

In the above-described configuration, in separation circuit, if the position of relaxing between ditch 110a, the 110b at a counter stress cuts off substrate 16, then will add large stress relaxing at stress on the substrate 16 between ditch 110a, the 110b (below, this part is called substrate cut-off parts 16a).Therefore, just might crackle occur at substrate cut-off parts 16a and the resin bed 13 that forms at an upper portion thereof.But, owing on the formation position of this substrate cut-off parts 16a, do not form the important inscape of projection electrode 12 and electronic circuit etc., so can not become problem even if crackle has occured yet.

On the other hand, because although the stress that cut-out substrate cut-off parts 16a occurs is passed on to the side, but the stress that has formed after filling owing to the two side portions at substrate cut-off parts 16a relaxes

ditch

110a, 110b, so the stress that occurs when cutting off will relax among ditch 110a, the 110b at stress and be absorbed.

So, just can prevent from projection electrode 12 and the zone that formed electronic circuit etc. crackle occuring, and can not make the stress influence that occurs at substrate cut-off parts 16a place to the outside (side that has formed electronic circuit of substrate 16) outward, formation position from stress mitigation structure 110a, 110b.What in addition, Figure 42 (C) illustrated is the state that separation circuit has finished.

Then, embodiments of the invention 21 are described.

Figure 43 is the key diagram of manufacture method of the semiconductor device of embodiment 21.In Figure 43, for the embodiment 1 that illustrated with Fig. 1～Fig. 9, only give identical label and omit explanation with the embodiment 19 identical formations that illustrated with Figure 41.

In the manufacture method of the present embodiment, before implementing resin-sealed operation, adopt the way of implementing the 1st separation circuit, substrate 16 is separated into one by one semiconductor device 112.On this semiconductor device 112 one by one, be formed with respectively projection electrode 112 and electronic circuit (not drawing).

The 1st separation circuit is then implemented resin-sealed operation after finishing.In this resin-sealed operation, shown in Figure 43 (A), separated semiconductor device 112 in the 1st separation circuit is arranged lift-launch to the film member 113 that will become base material.At this moment, semiconductor device 112 usefulness bonding agents carry on the film member 113.In addition, shown in Figure 43 (A), be arranged as so that between adjacent semiconductor device 112, form gap portion 114.

As mentioned above, when semiconductor device 112 is carried behind film member 113 tops, just carry out the compression forming of resin and process, when the surface of each semiconductor device 112 forms resin bed 13, form off-position resin bed 106 at gap portion 114.Then, the projection electrode of implementing to make at least head portion of projection electrode 12 to expose exposes operation.Figure 43 (B) shows the state after each above processing has finished.

After above processing finishes, then implement the 2nd separation circuit.In the 2nd separation circuit, the cut-off part reason is namely carried out in the position between adjacent semiconductor device 112 in the position that has formed off-position resin bed 106, cut off off-position resin bed 106 with film 113.Like this, shown in Figure 43 (C), the semiconductor device 112 that has formed resin bed 13 is opened with regard to separated, then shown in Figure 43 (D), removes film member 113.

In the manufacture method of the present embodiment of on top saying, in the 1st separation circuit, cut off in advance the way of substrate 16 owing to adopting, be separated into each semiconductor device 112, so when in resin-sealed operation, carrying semiconductor device 112 on the basal component 113, can carry different types of semiconductor device 112 and to basal component, go.Therefore, in the situation that a plurality of semiconductor device are set in the same resin bed 13, the semiconductor device 112 that sets different kinds and characteristic can be made up, the degree of freedom of design can be improved.In addition, even if in the present embodiment, can certainly obtain the effect of the embodiment 19 that illustrated with Figure 41.

Embodiments of the invention 22 then are described.

Figure 44 is the key diagram of manufacture method of the semiconductor device of embodiment 22.In Figure 44, only give identical label and omit explanation for the formation identical with the embodiment 21 that illustrated with Figure 43.The manufacture method of the present embodiment, although identical with the embodiment 21 that illustrated with Figure 43 substantially, difference is: what use as basal component in resin-sealed operation in embodiment 21 is film member 113, to this, what use as basal component in the present embodiment, is heating panel 115.

Therefore, in resin-sealed operation, semiconductor device 112 is carried to this heating panel 115, in the 2nd separation circuit, cuts off heating panel 115 with off-position resin bed 106.Yet, in embodiment 21, after the 2nd separation circuit finishes, remove film member 113, but in the present embodiment, but become the formation of after the 2nd separation circuit finishes, not removing the processing of heating panel 115.So, will become the formation that is set up residual lower heating panel 115 for the semiconductor device in manufacturing, therefore can improve the thermal diffusivity of semiconductor device.

Then, embodiments of the invention 23 are described.

Figure 45 and Figure 46 are the key diagrams of manufacture method of the semiconductor device of embodiment 23.In Figure 45 and Figure 46, only give identical label and omit explanation for the formation identical with the embodiment 1 that illustrated with Fig. 1～Fig. 9.

The feature of the manufacture method of the present embodiment is: at least after the enforcement of resin-sealed operation, and before implementing separation circuit, as shown in figure 46, form locating groove 120 at resin bed 13.

As mentioned above, adopt the way that forms locating groove 120 at resin bed 13, when for example the semiconductor device 10F that has made being tested processing, can go as benchmark is attached in the experimental rig take this locating groove 120.In addition, adopt the way that before implementing separation circuit, forms locating groove 120, just can form locating groove 120 to a plurality of semiconductor device 10F together, can improve the formation efficient of locating groove 120.

Form this locating groove 120, for example as shown in figure 45, can adopt with section cutting tool 29 to form in the way that resin bed 13 carries out half scribing.As mentioned above, adopt the way that forms locating groove 120 by means of half scribing, common employed scribing technology just can form locating groove 120 in the separation circuit owing to being used in, thus can be easily and precision form well locating groove.

Then.Embodiments of the invention 24 are described.

Figure 47 is the key diagram of manufacture method of the semiconductor device of embodiment 24.In Figure 47, only give identical label and omit explanation for the formation identical with the embodiment 1 that illustrated with Fig. 1～Fig. 9.

The feature of the manufacture method of the present embodiment is: at least after the enforcement of resin-sealed operation, and before implementing separation circuit, as shown in figure 47, form locating groove 121 at the back side of substrate 16.

As mentioned above, adopt the way that forms locating groove 121 at the back side of substrate 16, just can be the same with embodiment 23, carry out the location of semiconductor device take locating groove 121 as benchmark.Particularly in the location in when assembling since projection electrode 12 towards assembling substrate one side, can not identify it from top even if formed locating groove 120 at resin bed 13.

But, adopt and resemble the present embodiment forms first locating groove 121 like this on the back side of substrate 16 way, even if then when the assembling of semiconductor device, also can identify locating groove 121, can carry out the assembling of high progress and process.In addition, the formation of locating groove 121 can form with the way that section cutting tool 29 carries out half scribing with embodiment 23 the same employings at the back side of substrate 16.

Next, embodiments of the invention 25 and 26 are described.

Figure 48 is the key diagram of manufacture method of the semiconductor device of embodiment 25, and Figure 49 is the key diagram of manufacture method of the semiconductor device of embodiment 26.In Figure 48 and Figure 49, only give identical label and omit explanation for the formation identical with the embodiment 1 that illustrated with Fig. 1～Fig. 9.

The feature of the manufacture method of embodiment 25 is: the embodiment 23 that said with the top, 24 the same forms locating groove 122.Figure 48 (C) shows the locating groove 122 that forms at resin bed 13 with the present embodiment.

Form locating groove 122, at first will be shown in Figure 48 (A), be applied in the resin-sealed operation film that has formed protuberance 31 as film 30C in the position that does not hinder with projection electrode 12.Figure 48 (B) shows in resin-sealed operation, the film 30C with protuberance 31 is configured to state on the substrate 16 in opposite directions.Shown in figure, protuberance 31 is positioned at projection electrode 12 not in opposite directions the position.Therefore, after resin-sealed operation finishes, form location 122 with this protuberance 31 at resin bed 13.

On the other hand, the feature of the manufacture method of embodiment 26 is: form locator protrusions 123 at resin bed 13.Figure 49 (C) shows the locator protrusions 123 that forms at resin bed 13 with the present embodiment.

Form locator protrusions 123, at first will be shown in Figure 49 (A), be applied in the resin-sealed operation film that has formed recess 32 as film 30C in the position that does not hinder with projection electrode 12.Figure 49 (B) shows in resin-sealed operation, the film 30C with recess 32 is configured to state on the substrate 16 in opposite directions.Shown in figure, recess 32 is positioned at projection electrode 12 not in opposite directions the position.Therefore, after resin-sealed operation finishes, form locator protrusions 123 with this recess 32 at resin bed 13.

If the embodiment 25 and 26 that adopts the top to say, in resin-sealed operation, employing is applied in the way of the film 30C that has formed protuberance 31 or recess 32 on the position that does not hinder with projection electrode 12, just can form locating groove 122 or the locator protrusions 123 that will become positioning datum at resin bed 13.So, for example semiconductor device is being tested and assembled when processing, just can position processing take this locating groove 122 or locator protrusions 123 as benchmark, can simplify localization process.

Next, embodiments of the invention 27 are described.

Figure 50 is the key diagram of manufacture method of the semiconductor device of embodiment 27.In Figure 50, only give identical label and omit explanation for the formation identical with the embodiment 1 that illustrated with Fig. 1～Fig. 9.

The feature of the manufacture method of the present embodiment is: setting within a plurality of projection electrode 12, set first the lower projection electrode 12 that will become positioning datum (below, this projection electrode 12 is called location projection electrode 12B), after resin-sealed operation finishes, the way that employing is processed the locational resin bed 13 of the formation of the outstanding 12B of this location usefulness is so that can identify common projection electrode 12 and location projection electrode 12B.In addition, the location is with the formation of projection electrode 12B itself, and is the same with common projection electrode 12.

Figure 50 (A) shows resin-sealed operation and projection electrode exposes the substrate 16 that operation finishes rear state.Under this state, the thickness with homogeneous forms resin bed 13 in substrate 16 tops, therefore can not identify projection electrode 12 and location projection electrode 12B.

But, in the present embodiment, shown in Figure 50 (B), the location has been carried out making it the processing of attenuation with the nearby thickness of locational resin bed 13 of projection electrode 12B.Therefore, just can identify common projection electrode 12 and location projection electrode 12B.In addition, be used for making the location processing of projection electrode 12B identificationization, such as utilizing the projection electrode of on top saying to expose excimer laser used in the operation, etching, mechanical lapping or sandblast etc., therefore, can greatly not change because carrying out process of resin the manufacturing equipment of semiconductor device.

At this, identification projection electrode 12 and the method for location with projection electrode 12B are described.Location projection electrode 12B shown in Figure 50 (C) enlarges, that Figure 50 (D) illustrates then is the location projection electrode 12B that sees from top.On the other hand, shown in Figure 51 (A) enlarges is common projection electrode 12, and what Figure 51 (B) illustrated then is the common projection electrode 12 of seeing from top.

As mentioned above, because the location is identical with the formation of common projection electrode 12 with projection electrode 12B, therefore only use each projection electrode 12, the formation of 12B just can not be identified.Yet because each

projection electrode

12,12B has the shape of spherical or American football shape, so the diameter dimension of seeing from top changes because of the degree of depth of burying underground the resin bed 13.

That is, because common projection electrode 12 is embedded in the resin bed 13 dearly, the area that exposes is little,, shown in Figure 51 (B), the diameter dimension L2 that sees from top diminishes.To this, the area that exposes from resin bed 13 by means of the process of resin of carrying out saying the top with projection electrode 12B of location is large, and therefore, shown in Figure 50 (D), the diameter dimension L1 change of seeing from top is (L1＞L2) greatly.

Like this, adopt and detect each projection electrode 12 of seeing from top, the way of the diameter dimension of 12B just can be identified common projection electrode 12 and location projection electrode 12B.So, can be to locate the localization process that carry out semiconductor device with projection electrode 12B as benchmark.

Then, the assembly method of the semiconductor device of each embodiment manufacturing of saying with the top described.

Figure 52 shows the assembly method as embodiment 1.Figure 52 (A) shows the assembly method with the produced semiconductor device 10 of manufacture method of the said embodiment 1 in top, and its structure is with the grafting material 125 of solder(ing) paste etc. projection electrode 12 to be joined to assemble substrate 14 and get on.Figure 52 (B) shows the assembly method with the produced semiconductor device 10G of manufacture method of the said embodiment 14 in top, and its structure is that the grafting material 125 with solder(ing) paste etc. joins upright projection electrodes 18 to assembling substrate 14 and gets on.Figure 52 (C) shows the assembly method with the produced semiconductor device 10H of manufacture method of the said embodiment 15 in top, and its structure is to join on the assembling substrate 14 with projection electrode 90 with the connection of the outside on the head portion that sets projection electrode 12 to go.

Figure 53 shows the assembly method as embodiment 2.The feature that is shown in the assembly method of figure is: after on semiconductor device 10 being assembled to assembling substrate 14, set fill area 126.

The formation of Figure 53 (A) is: after being formed on projection electrode 12 on the semiconductor device 10 and directly being assembled on the assembling substrate 14, set again fill area 126, and the formation of Figure 53 (B) is: after on projection electrode 12 being joined to assembling substrate 14 by grafting material 125, set fill area 126 again.

As mentioned above, because

semiconductor device

10,10A～10H that the individual embodiment that said with the top makes have formed resin bed 13,13A, 13B, so the protection of substrate 16 can positively be carried out with this resin bed 13,13A, 13B on the surface of substrate 16.

Yet,

projection electrode

12,18,90 with the position that engages of assembling substrate 14 on but have because of each

projection electrode

12,18,90 and revealed the out danger of oxidation.In addition, exist in the situation of large difference at each assembling substrate 14 coefficient of thermal expansion with substrate 16, exist to each

projection electrode

12,18,90 and assembling substrate 14 between bonding station add the danger of large stress.Therefore, oxidation and mitigation stress in order to prevent from occuring in above-mentioned position also can become the formation that sets fill area.

Figure 54 shows as the assembly method of embodiment 3 (enumerated and had the outside example that connects with the semiconductor device 10H of projection electrode 90).The feature of the assembly method of the present embodiment is: when assembling the heat dissipation electrical fan is set on the semiconductor device 10H.

The formation of Figure 54 (A) is: be provided with heat dissipation electrical fan 127 for a semiconductor device 10H, and the formation of Figure 54 (B) is: semiconductor device 10H has set heat dissipation electrical fan 128 for a plurality of (being 2 among the figure).In addition, to the step of assembling assembling semiconductor device 10H on the substrate 14, both can be decided to be after being fixed to semiconductor device 10H on the heat dissipation electrical fan 127,128, to refill and be fitted on assembling substrate 14 and get on, also can be fixed to again the heat dissipation electrical fan after assembling on the substrate 14 and get on semiconductor device 10H is assembled to.

Figure 55 shows the assembly method as embodiment 4.Adopted in the present embodiment with inserter substrate 130 a plurality of semiconductor devices 10 have been assembled to the method that assembling substrate 14 gets on.It constitutes: semiconductor device 10 joins on the inserter substrate 130 with projection electrode 12, and each inserter substrate 130 usefulness substrates joint is electrically connected respectively with projection electrode 129.Therefore, it constitutes: inserter substrate 130 formed respectively connecting electrode 130A, 130b on its upper surface and the lower surface, and each connecting electrode 130a, 130b connects with internal wiring.

If adopt assembly method of the present invention, because semiconductor device 10 is set, can improve the packaging density of the semiconductor device 10 on the unit are of assembling substrate 14 under the state of a plurality of laminations.Effective being formed in the situation that semiconductor device 10 is memories of the present embodiment particularly.

Figure 56 shows the assembly method as embodiment 5.In the present embodiment, show the semiconductor device 10A of the embodiment 2 that had before illustrated with Figure 26 carry go on the inserter substrate 131 after, again this inserter substrate 131 is assembled to the method that assembling substrate 14 gets on.Inserter substrate 131 used in the present embodiment is multi-layer wire substrates, when will form the upper electrode that connects semiconductor device 10A on the surface thereon, also is equipped with the assembling projection electrode 136 that engages for assembling substrate 14 on lower surface.

Figure 57 shows the assembly method as embodiment 6.In the present embodiment, show the semiconductor device 10A of embodiment 2 is carried on the 1st inserter substrate 131, again it with other electronic unit 135 carry go on the 2nd inserter substrate 132 after, the 2nd inserter substrate 132 is assembled to the method that assembling substrate 14 gets on.The 1st inserter substrate 132 also is multiwiring board, when will form the upper electrode that connects the 1st inserter substrate 131 and electronic unit 135 on the surface thereon, also is equipped with the assembling projection electrode 137 that engages for assembling substrate 14 on lower surface.

In addition, Figure 58 shows the assembly method as embodiment 7.In being shown in the assembly method as embodiment 6 of Figure 57, it constitutes: only the upper surface at the 2nd inserter substrate 132 sets the 1st inserter substrate 131 and the electronic unit 135 that carries semiconductor-on-insulator device 10A, sets assembling projection electrode 137 at lower surface.

To this, in the present embodiment, on the upper surface of the 2nd inserter substrate 132 and this two sides of lower surface, all be equipped with the 1st inserter substrate 131 and the electronic unit 135 that has carried semiconductor-on-insulator device 10A.In addition, and being electrically connected between the outside, be made with the circuit board edge connector 138 on the side part (being left end portion among the figure) that is formed on the 2nd inserter substrate 132 and carry out.

With constituting of each assembly method of Figure 55～Figure 58 explanation: between

semiconductor device

10,10A and assembling substrate 14 (or circuit board edge connector connect connector), exist inserter substrate 131～133.Since this inserter substrate 131～133rd, multiwiring board, so the cabling of the wiring in the substrate is able to easily and has degree of freedom ground carry out, the matching between the projection electrode 12 (the outside connection with projection electrode 90) that can easily seek

semiconductor device

10,10A and the electrode that assembles substrate 14 (or connector) side.

Next, to describing as the manufacture method of the semiconductor device of embodiment 28 with as the semiconductor device of embodiments of the invention 7.

At first, with Figure 63 the semiconductor device 10J as embodiment 4 is described.In Figure 63, only give identical label and omit explanation for the formation identical with the semiconductor device 10 of the embodiment 1 that illustrated with Fig. 9.The semiconductor device 10J of the present embodiment says roughly, by substrate 16 (semiconductor device), and resin bed 13, and the formation such as external connecting electrode 40.Substrate 16 plays a part semiconductor device, has also formed the external connecting electrode 140 that is electrically connected with outside terminal when having formed electronic circuit on the device surface.In addition, resin 113 is formed the surface coverage of substrate 16, so external connecting electrode 140 also is constituted as and is sealed by resin bed 13.

Yet the feature of the semiconductor device 10J of the present embodiment is: this outer electrode 140 is constituted as that external connecting electrode 140 has revealed out to the side on the interface between substrate 16 and the resin bed 13.That is, semiconductor device 10J constitutes: do not have projection electrode, replace without projection electrode with the external connecting electrode 140 that exposes at the sidepiece of semiconductor device 10J and be electrically connected with the assembling substrate.

As mentioned above, because the semiconductor device 10J of the present embodiment need not form projection electrode, just can with external connecting electrode 140 assembling semiconductor device 10J, so can simplify formation and the manufacturing process of semiconductor device 10J, can reduce cost and improve manufacturing efficient.In addition, the formation of external connecting electrode 140 is the sidepieces that have been exposed to semiconductor device 10J, so, as the back will be told about in detail, can be with the state assembling semiconductor device 10J that stands for assembling substrate 14.

Then, the manufacture method as the semiconductor device of embodiment 28 is described.The manufacture method of embodiment 28 is to make the method for the semiconductor device 10J that is shown in Figure 63.

In the manufacture method of the semiconductor device of the present embodiment, do not implement projection electrode and form operation, after having implemented semiconductor device and forming operation, implement immediately resin-sealed operation.In semiconductor device forms operation, when the surface of substrate 16 forms the electronic circuit of regulation, also formed lead-out wiring 96 the ground and be connected 98 etc. as before illustrating with Figure 40.Then, form in the operation at semiconductor device, externally form external connecting electrode 140 on the connecting electrode 98.

Figure 59 shows the substrate 16 that semiconductor device forms the state that operation has been through with.Shown in figure, in the present embodiment, the formation position of external connecting electrode 140 is compiled on the one side that is equipped on the rectangular area (zone that fences up with solid line among the figure) that is equivalent to a semiconductor device.

After above-mentioned substrate forms the operation end, implement with that resin-sealed operation.In this resin-sealed operation, substrate 16 is installed in the compression forming of carrying out resin bed 13 in the mould.In addition, the processing that embodiment that resin-sealed operation owing to carry out was said with the top 1 is identical is therefore omit its explanation.

Adopt the way that finishes resin-sealed operation, on whole of substrate 16, all will form resin bed 13.Therefore, become as forming in the operation formed lead-out wiring 96 and connecting electrode 98 etc. at substrate by resin-sealed formation.So, after resin-sealed operation finishes, owing to not forming projection electrode in the present embodiment, expose operation so need not carry out projection electrode, just can implement separation circuit.

In the present embodiment, feature is: formed position cuts off substrate 16 in this separation circuit.In Figure 59, the position shown in the dotted line is exactly the off-position of substrate 16.The way that employing is cut off with resin bed 13 on this off-position, the part of outer electrode 140 just is cut off, thereby, can make it and constitute the semiconductor device 10J that outer electrode 140 exposes to the side on the interface between substrate 16 and the resin bed 13.

As mentioned above, if adopt the manufacture method of the present embodiment, then on top among said each embodiment needed projection electrode form operation and projection electrode and expose operation and all no longer need, only cut off the substrate 16 that has formed resin bed 13 in the position that has formed external connecting electrode 140, just can make this external connecting electrode 140 from resin bed 13, be exposed to the outside, can easily make semiconductor device 10J.

Next, with the manufacture method of Figure 60～Figure 62 explanation as the semiconductor device of embodiment 29.The manufacture method of embodiment 29 also is to make the method for the semiconductor device 10J that is shown in Figure 63.In addition, in Figure 60～Figure 62, give same label and omit its explanation for the formation identical with the formation that is shown in Figure 59.

As mentioned above, if the manufacture method of the embodiment 28 that illustrated with Figure 59 can be easy to make semiconductor device 10J.But, if the manufacture method with embodiment 28, then in separation circuit, must carry out the cut-off part reason in the position shown in the dotted line of Figure 59 and these two bit positions of the position shown in the solid line, in addition, it is the part of not wanting (being somebody's turn to do part is not thrown away) that the part that represents with arrow W among the figure has become.Therefore, in the manufacture method of embodiment 28, the cut-out efficient that has in the separation circuit is bad, and aspect effectively the utilizing of substrate 16 also disadvantageous shortcoming.

To this, in the present embodiment, with the previous embodiment that illustrated 28 ratios, the simplification of separation circuit and the advantages such as effective utilization of substrate 16 are arranged.Below, the manufacture method of the present embodiment is described.

Figure 60 shows the substrate 16 that semiconductor device in the present embodiment forms the state after operation has finished.Figure 60 (A) is the overall diagram of substrate 16, and Figure 60 (B) is within a plurality of semiconductor device that are formed on the substrate 16, and expansion shows the semiconductor device that represents with label 11a, 11b in Figure 60.Shown in Figure 60 (B), in the present embodiment, although also the formation position of external connecting electrode 140 is compiled on the one side that is equipped on the semiconductor device 11a, the 11b that become rectangle, but be in the present embodiment, feature is: external connecting electrode 140 is by communization between adjacent semiconductor device 11a, 11b.

After above-mentioned substrate forms the operation end, implement with that resin-sealed operation, as forming resin 13 on the surface of substrate that Figure 61 is shown in 16.Like this, just will become as form the formation that this formed lead-out wiring 96 of operation and connecting electrode 98 are also sealed by resin bed 13 at substrate.

After resin-sealed operation finishes, then implement separation circuit, cut off substrate 16 in the position that has formed external connecting electrode 140.Among Figure 61 (B), the position shown in the dotted line is exactly the off-position of substrate 16.Employing is on this off-position, cut off the way of substrate 16 with resin bed 13, external connecting electrode 140 just is cut off at middle position substantially, shown in Figure 62, just can make the semiconductor device 10J that outer electrode 140 exposes to the side on the interface between substrate 16 and the resin bed 13.

At this moment, as mentioned above, in the present embodiment, external connecting electrode 40 communization between adjacent semiconductor device 11a, 11b.Therefore, adopt the way of once cutting off processing, just can in 2 adjacent semiconductor device 11a, 11b, make respectively external connecting electrode 140 be exposed to the outside.

So, just can improve the manufacturing efficient of semiconductor device 10J, in addition, if adopt the manufacture method of the present embodiment, can also effectively utilize substrate 16 and can not occur in the part of not wanting that represents with arrow W among Figure 59.

Then explanation is as the assembly method of the semiconductor device of embodiments of the invention 8～embodiment 11.In addition, the assembly method of the semiconductor device of embodiment 8～embodiment 11 is that the semiconductor device 10J that is shown in Figure 63 is assembled to the method that assembling substrate 14 gets on.Figure 64 shows the assembly method as the semiconductor device 10J of embodiments of the invention 8.The assembly method of the present embodiment is that single semiconductor device 10J is assembled on the assembling substrate.

As mentioned above, the formation of semiconductor device 10J is: revealed out at its outside external connecting electrode 140.Therefore, adopt so that the side 141 that this external connecting electrode 140 has exposed and the way that assembling substrate 14 assembles in opposite directions just can make semiconductor device 10J assemble with the state that assembling substrate 14 is stood like that.In the example of Figure 64, be that the grafting material 142 with solder(ing) paste and so on makes external connecting electrode 140 engage with assembling substrate 14, use this way, make semiconductor device 10J to assemble assembling the state that substrate 14 stands.In addition, in the example of Figure 64 (B), in advance the outside is connected and set on the external connecting electrode 140 with projection electrode 143, adopt again to make this outside connection join the way of assembling on the substrate 14 to projection electrode 143, semiconductor device 10J is assembled with the state that assembling substrate 14 is stood.

As mentioned above, the way that employing makes semiconductor device 10J assemble with the state that assembling substrate 14 is stood, be assembled to the constituent ratio of assembling on the substrate 14 under the state of recumbency with making semiconductor device 10J, can reduce the assembling area of semiconductor device 10J, thereby, can improve the packaging density of semiconductor device 10J.

Figure 65 and Figure 66 show the assembly method as the semiconductor device 10J of embodiments of the invention 9 and embodiment 10.The assembly method of each embodiment is that 22 (being 4 in the present embodiment) semiconductor device 10J is assembled to the method for assembling on the substrate 14.

In the embodiment 9 that is shown in Figure 65, feature is: when many of semiconductor device 10J is stood they are assembled into state arranged side by side, and with bonding agent 144 adjacent semiconductor device 10J are engaged.Bonding between this adjacent semiconductor device 10J, carry out before getting on although be constituted as in the present embodiment joining assembling substrate 14 to, also can constitute with semiconductor device 10J is joined to assemble substrate get on when the consistent bonding processing of carrying out between semiconductor device 10J.

Semiconductor device 10J and assembling engaging between the substrate 14, the same with Figure 64 (B), use to adopt first the outside to be connected to set on the external connecting electrode 140 with projection electrode 143, again this outside connection is joined to the method that the way on the assembling substrate 14 is assembled with projection electrode 143.Yet semiconductor device 10J and assembling engaging between the substrate 14 also can be adopted the method with the grafting material 142 that is shown in Figure 64 (A).

On the other hand, in the embodiment 10 shown in Figure 66, feature is: when making the vertical dress of a plurality of semiconductor device 10J, make it to be assembled into state arranged side by side, and with support member 145 adjacent semiconductor device 10J is supported as founding the state of dress.In addition, the semiconductor device 10J in the present embodiment is the same with the assembly method of the joint that assembles 14 of substrates and embodiment 9, has adopted the outside method that connects with projection electrode 143 of using.

Support member 145 is made of the good metal of thermal diffusivity, has formed the dividing wall 146 of isolating adjacent semiconductor device 10J.Each semiconductor device 10J bonds on a pair of dividing wall 146 with bonding agent, and so, semiconductor device 10J just is fixed on the support member 145.

In addition, semiconductor device 10J is fixed to method on the support member 145, is not limited to bondingly, for example also can constitute to adopt a pair of dividing wall 146 is fixed the way that semiconductor device 10J is clipped in the middle.If adopt the assembly method of the semiconductor device 10J of the said embodiment 9 in top and 10, a plurality of semiconductor device 10J componentization was processed afterwards.Therefore when assembling, can carry out a plurality of semiconductor device 10J take parts as unit together processing to the assembling of assembling on the substrate 14, thereby can improve the efficiency of assembling of semiconductor device 10J.

Figure 67 shows the assembly method as the semiconductor device 10J of embodiments of the invention 11.In the assembly method of the present embodiment, feature is: by inserter substrate 147 a plurality of (being 4 in the present embodiment) semiconductor device 10J is assembled on the assembling substrate 14.

In the present embodiment, show after carrying a plurality of semiconductor device 10J of the assembly method of having used the embodiment 9 that before illustrated with Figure 65 on the inserter substrate 147, again inserter substrate 147 is assembled to the method that assembling substrate 14 gets on.Used inserter substrate 147 is multi-layer wire substrates in the present embodiment, the surface will be upper thereon when will form the upper electrode 148 that connects each semiconductor device 10J, on the lower electrode 149 that lower surface forms, be equipped with for the assembling usefulness projection electrode 136 that assembles substrate 14 and engage.In addition, upper electrode 148 and lower electrode 149, the internal wiring 150 that has been used in the inside formation of inserter substrate 147 connects.

If adopt the assembly method of the present embodiment, owing to will become the formation that between semiconductor device 10J and aglucon plate 14, has inserter substrate 147, so can improve semiconductor device 10J is assembled to the degree of freedom that assembling substrate 14 gets on.

Then, formation and the manufacture method thereof of the semiconductor device 160 of other different from said each semiconductor device 10 in front, 10A～10J are described.Figure 68 and Figure 69 are the key diagrams of the manufacture method of semiconductor device 160, and Figure 70 then shows the formation of semiconductor device 160.

Shown in Figure 70, to say roughly, semiconductor device 160 is by a plurality of semiconductor device 161, inserter substrate 162, the outside connection with formations such as projection electrode 163 and resin beds 164.

A plurality of semiconductor device 161 are carried to advance on the upper surface of plate 162 to inserter with electronic component 165.Upper surface at inserter substrate 162 is formed with upper electrode 166, and this upper electrode 166 is connected with semiconductor device and is connected with wire 168.

In addition, on the lower surface of inserter substrate 162, be formed with lower electrode 167, on this lower electrode 167, be connected with outside the connection with projection electrode 163.On this inserter substrate 162, formed through hole 169, with this through hole 169 be electrically connected upper electrode 166 and lower electrode 167.So, becoming is that semiconductor device 161 and outside are connected the formation that has been electrically connected with projection electrode 163.Have, resin bed 164 forms with the said technology for compressing and forming in top, has formed so that the upper surface of inserter substrate 162 is covered again.

So, even if with wire semiconductor device 161 is electrically connected in the semiconductor device 160 of the formation on the outside (inserter substrate 162), also can form resin bed 64 with technology for compressing and forming.

On the other hand, want to make the semiconductor device 160 of having made above-mentioned formation, shown in Figure 68, at first, carry semiconductor device 161 usefulness bonding agents on the upper surface of inserter substrate 162.At this moment, if necessary, also carry together attached electronic component 165.Then, the enforcement wire bonds is equipped on wire 168 upper electrode 166 on the upper surface that is formed on inserter substrate 162 and has been formed between the pad on the top of partly leading device 161.Secondly, the lower electrode 167 on the lower surface that is formed on inserter substrate 162, for example by copying sets the outside and connects on the usefulness projection electrode 163.

As mentioned above, semiconductor device 161, outside connect set on the inserter substrate 162 with projection electrode 163 and wire after, this inserter substrate 162 is attached in the mould of resin-sealed usefulness and goes, use the compression forming method, form resin bed 164 on the surface of inserter substrate 162.Then, the assigned position in Figure 69 shown in the with dashed lines cuts off this inserter substrate 162, uses this way, just can form the semiconductor device 160 shown in Figure 70.

In addition, Figure 71～Figure 75 also is semiconductor device 170, the formation of 170A and the key diagram of manufacture method thereof of different other of the explanation semiconductor device 10, the 10A～10J that speak out from front one.Figure 71 is the key diagram of the formation of semiconductor device 170, and Figure 72 and Figure 73 are the key diagrams of the manufacture method of semiconductor device 170, Figure 74 be semiconductor device 170A the key diagram of formation, Figure 75 is the key diagram of the manufacture method of semiconductor device 170A.

The formation of semiconductor device 170 is extremely simple, and rough says, by semiconductor device 171, resin-encapsulated 172 and metal film 173 consist of.A plurality of electrode pads 174 have been formed on the upper surface of semiconductor device 171.In addition, the formation of resin-encapsulated 172 is to make for example molding for epoxy resin with the technology for compressing and forming that the front was said.On the fitting surface 175 of this resin-encapsulated 172, formed resin projection 177 integraty.

In addition, metal film 173 is formed the resin projection 175 that is formed on the resin-encapsulated 172 is covered.Be equipped with wire 178 between the electrode pad 174 of saying in this metal film 173 and front, become the formation that metal film 173 and semiconductor device 171 is electrically connected for this wire 178.

The semiconductor device 170 that has been made above-mentioned formation no longer needs the such lead of existing SSOP and outer lead, being used for carrying out cabling area from from lead to the outer lead cabling and the area of lead itself no longer needs, and can make semiconductor device 170 miniaturizations.

In addition, form the solder ball that resembles the existing BGA and use mounted board owing to being no longer necessary for, so can also reduce the cost of semiconductor device 170.Moreover, since resin projection 177 and metal film 173 carry out teamwork play a part with the scolding tin projection electrode of the semiconductor device of BGA type equal, so can improve assembling.

Secondly, the manufacture method of semiconductor device 170 is described with Figure 72 and Figure 73.Make semiconductor device 170, prepare first the lead frame 180 shown in Figure 72.This lead frame 180 is for example formed by copper (Cu), on the position corresponding with the formation position of the said resin projection 177 in top, has formed the recess corresponding with the shape of resin projection 177 181.Form metal film 173 on the surface of this recess 181 again.

On the lead frame 180 that becomes above-mentioned formation, at first, carry semiconductor-on-insulator device 171.Semiconductor device 171 is carried to lead frame 180.Then, lead frame 180 is mounted on the wire bonds device and metal 178 to be set the electrode pad 174 that is formed on the semiconductor device 171 and has been formed between the metal film 173 on the lead frame 180.Like this, just become as during the semiconductor 171 and the formation that has been electrically connected of metal film 173.Figure 72 shows the state after above said processing finishes.

When above-mentioned wire 178 set end after, then form resin-encapsulated 172 so that semiconductor device 171 is sealed in the top of lead-in wire 180.In the present embodiment, formed resin-encapsulated 172 with the compression forming method.Figure 73 shows the lead frame 180 that has formed resin-encapsulated 172.

After the formation processing of the said resin-encapsulated 172 in top finished, the cut-off part reason was carried out in the position that just is shown in broken lines in Figure 71, simultaneously, implemented from separation resin encapsulation 172 separation circuits with formation semiconductor device 170 on 180 that go between.The way that this separation circuit employing is soaked in lead frame 180 and dissolves in the corrosive liquid is carried out.Used corrosive liquid has been selected and has been had only corrosion lead-in wire 280 in this separation circuit, does not corrode the corrosive liquid of the character of metal film 173.

Therefore, adopt lead frame 180 complete dissolved ways, resin-encapsulated 172 is separated from lead frame 180.At this moment, will become for setting the state on the resin projection 177, so will form the semiconductor device 170 shown in Figure 71 owing to metal film 173.So, adopt the way that resin-encapsulated 172 is separated by means of the dissolving lead frame from lead frame 180, just can really and easily make resin-encapsulated 172 from the separating treatment that lead frame 180 separates, can improve rate of finished products.

On the other hand, the formation of the semiconductor device 170A shown in Figure 74 is a plurality of semiconductor device 171 to be set in the resin-encapsulated 172.So, adopt the way that in a resin-encapsulated 172, sets a plurality of semiconductor device 171, just can make semiconductor device 170A multifunction.In addition, the manufacture method of this semiconductor device 170A is with identical substantially with the manufacture method of Figure 72 and Figure 73 explanation, and difference only is that the place of incision shown in Figure 75 is different.Omit the detailed description to the manufacture method of semiconductor device 170A for this reason.

Figure 78～Figure 80 shows as the semiconductor device of embodiments of the invention 30 and manufacture method thereof.At first, with Figure 78 the semiconductor device 210 as embodiments of the invention 30 is described.In each embodiment of following explanation, although enumerate the semiconductor device of T-BGA (band carry a ball grid array, Tape-Ball Grid Array) structure the present invention is described, also can use the present invention for other the semiconductor device of BGA structure.

Semiconductor device 210, rough segmentation is got up, by semiconductor device 211, circuit board 212, framework 213, the formations such as projection electrode 216 and resin-encapsulated 215.Semiconductor device 211 is so-called nude films, has formed a plurality of projection electrodes 216 on its lower surface.This semiconductor device 211 adopts the way of carrying out the flip-chip bonding, electric property ground and mechanically being connected on the circuit board 212.

Circuit board 212 is by substrate film 217 (flexible base material), the formations such as lead-in wire 218 and dielectric film 219 (solder resist (layer)).Substrate film 217 is the flexible insulating properties films that have such as polyimides etc., has formed the lead-in wire 218 of compulsory figure on this substrate film 217 such as the conductive metal with Copper Foil etc.

In addition, substrate film 217 is larger than its thickness with lead-in wire 218 and dielectric film 219, and its mechanical strength also is set highly.Therefore, just become lead-in wire 218 and dielectric film 219 and be held formation on the substrate film 217.In addition, as mentioned above, because substrate film 217 has flexibility, and the thickness of lead-in wire 218 and dielectric film 219 is thin, so circuit board is constituted as can crooked formation.Also have, on the position of the substantially central authorities of this substrate film 217, formed the installation hole 217a that is used for installing semiconductor device 211.

On the other hand, lead-in wire 218 is made following formation: formed accordingly a plurality ofly with the number that sets the projection electrode 216 on the semiconductor device 211, and formed inner lead portion 220 and external lead portion 221 integraty.Inner lead portion 220 is the parts that are positioned at the inboard of lead-in wire 218, and external lead portion 221 is the parts that are positioned at periphery for inner lead portion 220, is the part that connects projection electrode 214.

Dielectric film 219 is resin moldings that polyamides rolls the insulating properties of imines etc., on the formation position of projection electrode 214, has formed connecting hole 219a.Be made the formation that is electrically connected by this connecting hole 219a lead-in wire 218 and projection electrode 214.Become and be the formation with these dielectric film 219 protection lead-in wires 218.

On the other hand, framework 213 is formed by the metal material of for example copper or aluminium and so on.On the middle body of this framework 213, formed and be constructed so that and the installation hole 217a cavity 223 in opposite directions that is formed on the above-mentioned substrate film 217.In the present embodiment, cavity is constituted as the hole of up/down perforation framework 213.It is a rectangle that this framework 213 is made under the state of top view, therefore, adopts the way that forms cavity 223, and framework 213 has just become the structure with rectangular shape.

With bonding agent 222 the said circuit board 212 in front is joined on the lower surface of the framework 213 of making above-mentioned formation, so just become as the circuit board 212 with flexibility being fixed to the formation on the framework 213.Under circuit board 212 had been set state on the framework 213, the inner lead portion 220 of the said lead-in wire 218 in front was constituted as and extends in the cavity 223.Semiconductor device 211 on the inner lead portion 220 that extends in this cavity 223, therefore, has been become the formation that semiconductor device 211 has been positioned at cavity 223 inside by flip-chip bonded.

In addition, 221 quilts of external lead portion of lead-in wire 218 set lower surface one side for being positioned at framework 213, and will set projection electrode 214 on this external lead portion 221.In the present embodiment, as projection electrode 214, this projection electrode 214 adopts the way that joins on the external lead portion 221 by the connecting hole 219 that is formed on the dielectric film 219 to form solder ball solder ball.

At this moment, as mentioned above, the external lead portion 221 that sets projection electrode 214 has been positioned at lower surface one side of framework 213, even if with having flexible circuit board 212, external lead portion 221 also can limit its flexible distortion with framework 213.Therefore, even if with having flexible circuit board 212, on the position of the projection electrode 214 that will set, do not have the inhomogenous such possibility of generation, so can improve assembling yet.

In addition, in the cavity 223 of having installed semiconductor device 211, set sealing resin 215.Sealing resin 215 forms with the compression forming method as described later.Employing sets the way of sealing resin 215 in cavity 223; because semiconductor device 211;

projection electrode

216, and 218 the inner lead portion 220 of going between will become by resin-sealed formation, so can positively protect the inner lead portion 220 of semiconductor 211 and lead-in wire 218.

Then, with Figure 79 the manufacture method (manufacture method of embodiment 30) of the semiconductor device 210 that becomes above-mentioned formation is described.

Semiconductor device 210, rough segmentation is got up, the way manufacturing of the following operation of available enforcement.These operations are: the semiconductor device that forms semiconductor device 211 forms operation; The circuit board that forms circuit board 212 forms operation; The projection electrode that forms projection electrode 214 forms operation; The device that semiconductor device 211 is carried on the circuit board 212 carries operation; Carry out resin-sealed resin-sealed operation with 215 pairs of semiconductor device of sealing resin, 211 grades; Carry out all operations of the test procedure etc. of various reliability tests.

At above-mentioned each in-process, semiconductor device forms operation, circuit board forms operation, projection electrode forms operation, and device carries operation and the test procedure, carries out with well-known technology, because key of the present invention is after resin-sealed operation, so, in the following description, only resin-sealed operation is described.

Figure 79 shows the embodiment 30 of resin-sealed operation.

After resin-sealed operation begins, at first, shown in Figure 79, employing forms operation via semiconductor device, circuit board forms the way of operation and device lift-launch operation etc., the circuit board 212 that carries semiconductor-on-insulator device 211 is attached in the semiconductor device die for manufacturing 224 (below, only be referred to as mould) goes.Here, the structure of mould 224 described.Divide roughly, mould 224 is made of patrix 225 and counterdie 226.In this patrix 225 and counterdie 226, all establish the heater that comes not shown in FIG. in, constitute that the sealing resin of state carries out heating and melting before the moulding that can will say the back.

Constituting of patrix 225 can with next lowering or hoisting gear arrow Z1 in the drawings not shown in FIG., be carried out lifting action on the Z2 direction.In addition, the lower surface of patrix 225 is regarded cavity face 225, and this cavity face 225 has been made tabular surface.Therefore, the shape of patrix 225 has been made extremely simple shape, can make at an easy rate patrix 225.

On the other hand, counterdie 226 is made of the 1st half counterdie 228 and the 2nd half counterdie 229, and the formation of the 1st half counterdie 228 is the inside that has been equipped on the 2nd half counterdie 229.The the 1st and the

2nd half counterdie

228 and 229 be made can be respectively with the elevating mechanism that comes not shown in FIG. at Z1, the formation that moves independently on the Z2 direction.

In addition, in the present embodiment, the cavity face 230 on the upper surface that is formed at the 1st half counterdie 228 sets resin film 231, and sealing resin 227 mountings are carried out resin-sealed processing behind the top of this resin film 231.Here used resin film 231 can be with for example polyimides, vinyl chloride, PC, Pet, quiet decomposability resin, and can select those can be because of the material of added abominableization of heat when the resin forming described later.

In resin-sealed operation, at first, the circuit board 212 that carries semiconductor-on-insulator device 211 is attached in the mould 224.Specifically, patrix 225 and the 2nd half counterdie 229 are separated, between installing circuit board 212.Then, patrix 225 and the 2nd half counterdie 229 are moved as mutually close, with patrix 225 and the 2nd half counterdie 229 circuit board 212 is clipped in the middle.Figure 79 shows to adopt and makes circuit board 212 be sandwiched in way between patrix 225 and the 2nd half counterdie 229, circuit board 212 is attached to state in the mould 224.

In addition, the sealing resin 227 that has carried the 1st half counterdie 228 top is the resins such as polyimides, epoxy resin (thermoplastic resins of PPS, PEEK, PES and thermal endurance liquid crystalline resin etc.) etc., in the present embodiment, usefulness is that to have made this resin forming be the resin of the formation of cylindrical shape.227 loading position of sealing resin has been chosen to be the substantially middle position of the 1st half counterdie 228 so that with carry on the circuit board 212 semiconductor device 211 in opposite directions.

As mentioned above, after being attached to circuit board 212 in the mould 224, then, the compression of just implementing sealing resin 227 forms to be processed.After beginning form is processed in compression, confirm to be warmed up to by means of the heat seal resin 227 that is produced by mould 224 can the temperature of melting after, make the 2nd half counterdie 228 moving on the Z2 direction.

The 2nd half counterdie 228 is moving on the Z2 direction by means of making, and the sealing resin 227 behind the heat fusing is also upper moving excessively, and very fast sealing resin 227 will reach circuit board 212 places.Then, adopt to make the 1st half counterdie 228 further moving way, compression seal resin 227, sealing resin 227 enters in the cavity 223 from the part of leaving between inner lead portion 220 and the semiconductor device 211.

At this moment, as mentioned above, sealing resin 227 is further compressed by means of the pushing of the 1st half counterdie 228, and sealing resin 227 just advances in cavity 223 with this compression ratio.The way of above-mentioned resin-sealed processing is carried out in employing; shown in Figure 78; sealing resin 215 is formed at the top with semiconductor device 211 in cavity 223, so just becomes the state of sealed resin 215 protections of semiconductor device 211, projection electrode 216 and inner lead portion 220.

As mentioned above, in the resin-sealed operation of the present embodiment, the result become for: resin forming (this resin forming method is called the compression forming method) is carried out on mould 224 interior compression limits in sealing resin 227 limits.So, adopt the way that forms sealing resin 227 with the compression forming method, also can be to potting resin in the narrow gap portion that is formed between semiconductor device 211 and the circuit board 212.

In addition, because the words briquetting pressure with compression forming can be low, so can also prevent from when resin forming, producing distortion at circuit board 224, or prevent that load is added on the position that is electrically connected (that is, the connecting portion between projection electrode 216 and the inner lead portion 220) between semiconductor device 211 and the circuit board 212.Like this, just can prevent in resin-sealed operation, cut off the connection between semiconductor device 211 and the circuit board 212, just can carry out the high resin-sealed processing of reliability.

In addition, when carrying out above-mentioned resin-sealed operation, if the translational speed of the 1st half counterdie 228 is fast, the briquetting pressure part that then produces because of compression forming increases sharp, link position between play electrode 216 and inner lead portion 220 etc. is located, and the danger that damage occurs is just arranged.And if the translational speed of the 1st half counterdie 228 is slow, then it is believed that because briquetting pressure is low, so or produce the position to fill sealing resin 227, or because the time-consuming manufacturing efficient that reduces when resin-sealed.So the translational speed of the 1st half counterdie 228 is chosen to be the suitable speed that above-mentioned opposite problem does not occur.

When having formed sealing resin 215 as described above, implement with that the processing that circuit board 212 is taken out from mould 224.Want circuit board 212 is taken out from mould 224, at first, the 1st half counterdie 229 is moved downward in the Z1 direction.At this moment, owing on the cavity face 230 of the 1st half counterdie 228, be equipped with the good resin film of release property 231, so the 1st half counterdie 228 is easy to leave from sealing resin 215.After the 1st half counterdie 228 left from sealing resin 215 as described above, this patrix 225 and the 2nd half counterdie 229 were mobile in the direction of leaving mutually, so, just can take out circuit board 212 from mould 224.In addition, the moment that the 1st half counterdie 228 is moved, even if with make the half counterdie 229 and patrix 225 moment of moving is synchronization, what problem can not occur especially.

After as above circuit board 212 being taken out, then form projection electrode 214 at circuit board 212 from mould 224.Although the formation method of this projection electrode 214 has multiple, but in the present embodiment, employing be to have made in advance solder ball, after this solder ball being copied on the connecting hole 219a that is formed on the circuit board 212, heat-treat, make it to join to the method on the lead-in wire 218.Adopt the way through above-mentioned a series of manufacture method, just can make the semiconductor device of Figure 78.

On the other hand, Figure 80 shows the embodiment 31 of the resin-sealed operation of implementing when making the semiconductor device 210 of Figure 78.In Figure 80, the formation identical with the formation of Figure 79 only given same label and omitted explanation.

In the resin-sealed operation of Figure 78, the resin film 31 that is used for the raising release property constitutes the cavity face 230 that only is provided in the 1st half counterdie 228.But, shown in Figure 79, the position that contacts with sealing resin is arranged also on the cavity face 225a of patrix 225.

Therefore, in the resin-sealed operation of the present embodiment, feature is: also be equipped with the good resin film of release property 232 on the cavity face 225a of patrix 225.The material of the resin film 231 that the material of this resin film 232 also can be said with the top is identical.In addition, set resin film 232, should before being attached to circuit board 212 in the mould 224, first resin film 232 be set on the cavity face 225a of patrix 225, then, use again patrix 225 and the 12nd half counterdie 229 clamping sealing resin 215.

Then, semiconductor device 210A as embodiments of the invention 31 is described.

Figure 81 shows the semiconductor device 210A as embodiment 31.In Figure 81, the formation identical with the semiconductor device of the embodiment 30 of Figure 78 given same label and omitted explanation.

The feature of the semiconductor device 210A of the present embodiment is: assembling one side at sealing resin 215 is provided with heating panel 233.These heating panel 233 usefulness for example good metal of thermal diffusivity of aluminium and so on form.Like this, heating panel 233 is set the way on the sealing resin 215 of encapsulated semiconductor device 211, just can dissipate the heat that in semiconductor device 211, is occured with good efficient by heating panel 233.The temperature that therefore can suppress semiconductor device 211 rises, the reliability in the time of can improving semiconductor device 210A work.

The semiconductor device 210A of the present embodiment, the semiconductor device 210 of the embodiment 30 that says with respect to the front, the setting towards becoming as turning upside down of circuit board 212.That is, become as set substrate film 217 at orlop, go between 218 on the lamination successively above that, the formation of dielectric film 219.

Therefore, with bonding agent 222 dielectric film 219 is bonded on the framework 213, formed the connecting hole 217b that will set projection electrode 214 at substrate film 217.So, adopt the suitably way of selected connecting

hole

217a, 217b, circuit board 212 set towards, be decided to be take substrate film 217 as upside, or all not serious take dielectric film 219 as upside conversely.

Figure 82 and Figure 83 are the key diagrams of resin-sealed operation within the manufacturing process of the semiconductor device 210A of Figure 81.In Figure 81 and Figure 83, the formation identical with the formation of Figure 79 and Figure 80 given identical label and omitted explanation.

In the resin-sealed operation of Figure 82, feature is: replace the resin film 231 of Figure 79, set on the cavity face 230 of the 1st half counterdie 228 scattering 233.Therefore, sealing resin 227 is by the top of mounting to heating panel 233.In addition, because that the size of heating panel 233 is set to is slightly less than the size of cavity face 230, so can not hinder because setting heating panel 233 movement of the 1st half counterdie 228.

As mentioned above, having used the compression forming of the sealing resin 227 of the mould 224 that has set heating panel 233 and processed, is the same with processing with the compression forming of Figure 79 explanation basically.But sealing resin 227 is accompanied by the upper moving of the 1st half counterdie 228, is pushed to and carries out carrying out compression forming on the upper moving heating panel 223.

At this moment, because heating panel 223 is not good with the release property of sealing resin 227, and, heating panel 233 only loads on the metal the 1st half counterdie 228, so after stating 215 moulding in sealing, when the 1st half counterdie 228 is moved downward, heating panel 233 will become the state that has been attached on the sealing resin 215.That is, adopt to implement the way of resin-sealed operation, can carry out simultaneously heating panel 233 is set processing on the sealing resin 215, thereby can easily make the semiconductor device 210A with heating panel 233.

In the resin-sealed operation of Figure 83, feature is: when heating panel 233 is set cavity face 230 tops of the 1st half counterdie 228, with the same shown in Figure 80 the good resin film 232 of thermal diffusivity is set on the cavity face 225a of patrix 225.

Therefore, even if with the resin-sealed operation of the present embodiment, also can easily make the semiconductor device 210A with heating panel 233, and, sealing resin 215 is easily left from the cavity face 225a of patrix 225.

Then explanation is as the semiconductor device 210B of embodiments of the invention 32.

Figure 83 shows the semiconductor device 210B as embodiments of the invention 32.In Figure 84, to the formation identical with the semiconductor device 210 of the embodiment 30 that is shown in Figure 78, only give same label and omit explanation.

The semiconductor device 210B of the present embodiment is the same with the semiconductor device 210A of embodiment 31, feature is: when the 1st heating panel 233 being set on the assembling side (lower surface among the figure) of sealing resin 215, in upper surface one side of framework 213 the 2nd heating panel 234 is set.The 2nd heating panel 234 is also the same with the 1st heating panel 233, and the metal good by the thermal diffusivity of for example aluminium and so on forms.

So, employing is clipped in the middle semiconductor device 211 way of

heating panel

233 and 234 is set respectively at an upper portion thereof and at a lower portion thereof, just can more effectively distribute the heat that occurs in semiconductor device 211, can improve the heat dissipation characteristics of semiconductor device 210B.

On the other hand, in the semiconductor device 210B of the present embodiment, as the method that semiconductor device 211 and circuit board 212 are electrically connected, usefulness be wire 235.Therefore, the method that is connected with circuit board 212 as semiconductor device 211, its constitute at first the 2nd heating panel 234 usefulness for example bonding agent (not shown in FIG.) bond on the upper surface of framework 213, then form the bottom that is consisted of by the 2nd heating panel 234 at the cavity 223 that is formed on the framework 213.

Then, when bonding to semiconductor device 211 on the 2nd heating panel 234 in this cavity 223 with bonding agent 236, circuit board 212 is bonded on the lower surface among the figure of framework 213.Then, after framework 213 sets the 2nd heating panel 234 and circuit board 212, between the lead-in wire 218 of circuit board 212 and semiconductor device 211, set wire 235 with the wire bonds method.

Then, after this wire bonds processing finished, the embodiment that said with the top was the same, formed sealing resin 215 with the compression forming method.Because when this compression forming, set heating panel 234 on the top of semiconductor device 211 and framework 213, so sealing resin 215 need not directly contact with patrix 225, thereby can improve release property.

In addition, the heating panel 234 among the said embodiment in top, in the situation that so not large in semiconductor device 211 heating, the high material of non-selected thermal diffusivity not necessarily just also can be with the low material of thermal diffusivity.

Then explanation is as the semiconductor device 210C of embodiments of the invention 33.

Figure 85 shows the semiconductor device 210C as embodiments of the invention 33.In Figure 85, to the formation identical with the semiconductor device 210B of the embodiment 32 that is shown in Figure 84, only give same label and omit explanation.

Being set to framework 213A on the semiconductor device 210C of the present embodiment has been made and has made with the heating panel 234 among the semiconductor device 210B of Figure 84 explanation and the formation of framework 213 forming as one.Therefore will become at the cavity 223A that framework 213A forms as the Bottom Shape that has of bottom 237 is arranged.Semiconductor device 211 usefulness bonding agents 236 are fixed on this bottom 237, and substrate 212 then sets on the lower surface among the figure of framework 213A.Therefore, even if with the formation of the present embodiment, also can carry out the wire bonds between semiconductor device 211 and circuit board 212.

In the formation of the semiconductor device 210C of above-mentioned the present embodiment, owing to can reduce components and parts number and manufacturing process with the semiconductor device 210B ratio of embodiment 32, so can lower the cost of semiconductor device 210C.In addition, even if in the semiconductor device 210C of the formation of the present embodiment, as the formation method of sealing resin 215, also can use the compression forming method.

Then explanation is as the semiconductor device of embodiments of the invention 34

Figure 86 shows the semiconductor device 210D as embodiments of the invention 34.In Figure 86, to the formation identical with the semiconductor device 210B of the embodiment 32 that is shown in Fig. 7, only give same label and omit explanation.

The feature of the semiconductor device 210D of the present embodiment is: adopt to become the formation way of semiconductor device 211 being carried the top of arriving wiring plate 212A, so that also formed projection electrode 214 on the position of the positive bottom of semiconductor device 211.Therefore, the circuit board 212A of the present embodiment is different from semiconductor device 210～210C of the embodiment that said in the front, does not form installation hole 217a.

As described in the present embodiment, adopt the top that semiconductor device 211 is carried circuit board 212A, on the position of the positive bottom of semiconductor device 211, also form the way of projection electrode 214, can be so that at the equipping position of projection electrode 214 degree of freedom be arranged, also, can make semiconductor device 210D miniaturization.In addition, even if in the semiconductor device 210D of the present embodiment, as the formation method of sealing resin 215, also can use the compression forming method.

Next, other embodiment of resin sealing process is described with Figure 87.In Figure 87, the formation identical with the mould 224 of before having said with Figure 79 only given same label and slightly explanation.

Rough segmentation is got up, and mould 224A used in the present embodiment also is made of patrix 225 and counterdie 226A.But the used mould 224A of the present embodiment is the mould that can form together can the be a plurality of processed continuously formation of the what is called of a plurality of (being 2 in the present embodiment) sealing resin 215.

The formation of patrix 225 is identical substantially with the patrix that is arranged in the mould 224 shown in Figure 79.Yet, as mentioned above, because the formation of the mould 224A of the present embodiment is to carry out a plurality of continuous processing, so its shape is formed greatly.In addition, counterdie 226A is by the 1st and the

2nd half counterdie

228, and 229A consists of, and has been made the formation that 2 the 1st half counterdies 228 are equipped on the inside of the 2nd half counterdie 229A.

In addition, in the present embodiment, on the middle position of the 2nd half counterdie 229A, also be provided with the residual resin of removing residual resin and remove mechanism 240.This residual resin is removed mechanism 240 and is said roughly by window part 241, the formations such as tank 242 and pressure control lever 243.Window part 241 is the windows that form in the wall section 238 that the 2nd half counterdie 229A forms, and this window 241 has become the formation that is communicated with tank 242.

Tank 242 has cylindrical conformation, and the inside of this tank 242 is equiped with the pressure control lever 243 that has become piston structure slidably.This pressure control lever 243 has been connected on the driving mechanism that does not draw, and it constitutes can Z1 for the 2nd half counterdie 229A, carries out lifting action on the Z2 direction.

Then, possess the residual resin that becomes above-mentioned formation and remove the resin-sealed operation of the mould 224A of mechanism 240 and describe having used.

After the resin-sealed operation of the present embodiment begins, at first, implement substrate installing operation, install in the operation at substrate, circuit board 212 is attached among the mould 224A goes.Under the state after resin-sealed operation has just begun, counterdie 226A becomes the state that has moved downward for to patrix 225 on the Z1 direction, consists of the resin-sealed pressure control lever 243 of removing mechanism 240 and then becomes as moving to the state of upper moving extreme position.

For the mould 224A of this state, at first, after resin film 231 being set the top of each the 1st half counterdie 228, mounting sealing resin 227.Then, after carrying circuit board 212 to the top of the 2nd half counterdie 229A, patrix 225 and counterdie 226A are moved, so that adjacent to each other, circuit board 212 is clamped between patrix 225 and the counterdie 226A.Figure 87 shows circuit board 212 is clamped in state between patrix 225 and the counterdie 226A.At this constantly, the top of the 1st half counterdie 228 in mould 224A, although can form cavity part 239 (space segment), the tank 242 that the residual resin that the formation top was said is removed mechanism 240 has become as be communicated to the formation on the cavity part 239 by window part 241.

As mentioned above, when circuit board 212 being clamped between patrix 225 and the counterdie 226A, each the 1st half counterdie 228 all begins on the Z1 direction moving.Like this, sealing resin 227 carries out resin forming on cavity part 239 internal edges compression limit.At this moment, resin-sealed in order positively semiconductor device 211 to be carried out, must be set as suitable speed to the translational speed of each the 1st half counterdie 228.The translational speed of the 1st half counterdie 228 is suitably changed, in other words, the pressure of the sealing resin 227 in the cavity part 239 is suitably changed with being equivalent to.

In the present embodiment, employing arranges the way that residual resin is removed mechanism 240 in mould 224A, just become except the translational speed of the 1st half counterdie 228, can also use the up and down way of driving pressure control lever 243, the formation of the compression pressure of control sealing resin 227.Specifically, adopt the way that pressure control lever 243 is moved downward, the pressure of the sealing resin in the cavity part 239 makes way moving on the pressure control lever 243 with step-down and adopt, and the pressure of the sealing resin in the cavity part 239 will uprise.

For example, larger than the volume of the sealing resin 215 of wanting to form in the amount of resin of sealing resin 227, in the situation of the pressure in the cavity part 239 because of the residual resin rising, just have and can not carry out the danger of suitable resin forming.Therefore, under these circumstances, the way that adopts the pressure control lever 243 make residual resin remove mechanism 240 to move downward in the Z1 direction, by window part 241 residual resin except going in the tank 242.

Like this, even if residual resin has occured in supposition, also can make the pressure decreased in the cavity part 239.

So, employing arranges the way that residual resin is removed mechanism 240, just can when the sealing resin moulding, carry out simultaneously the processing of removing of residual resin, just can be forever carry out resin forming with pressure suitably, just can carry out well the forming processes of sealing resin 215.In addition, when can preventing that residual resin from leaking from mould 224A, even if owing to the measuring accuracy of sealing resin 227 also has no relations than the low of the various embodiments described above.So can also make the metering facilitation of sealing resin 227.

In addition, after having formed sealing resin 215, then implement stripping process, make circuit board 212 demoulding from mould 224A that has formed sealing resin 215.

As mentioned above, if adopt the resin-sealed operation of the present embodiment, owing to being to be controlled to be optimum pressure to the pressure in the cavity part 239 at resin forming, so can prevent residual lower air in sealing resin, gassing.

In the situation that carry out heat treated after the resin-sealed operation, will there be the danger that the damage of crackles etc. occurs at sealing resin 215 because of this air bubble expansion in a kind of situation that bubble has occured in sealing resin 215 of now supposition imagination.Yet, as described above, adopt the way that residual resin is removed mechanism 240 is set, owing to can prevent at sealing resin 215 interior gassings, so just do not have when heating the danger at sealing resin 215 interior gassings, thereby can improve the reliability of semiconductor device.

Semiconductor device and the manufacture method thereof of embodiments of the invention 35～47 then, are described.In Figure 88～Figure 102, for those formations corresponding with the formation of the semiconductor device 210 of the embodiment 30 that is shown in Figure 78 and Figure 90, only give same label and omit explanation.

Figure 88 shows the semiconductor device 210E as embodiments of the invention 35, and Figure 89 and Figure 90 show the manufacture method of semiconductor device 210.The feature of the semiconductor device 210E of embodiment 35 is: on circuit board 245, side at semiconductor device 211, form the extension 246 (referring to Figure 89 (A)) that in long way extends out, employing is along the way of framework 213 bendings, this extension 246 is drawn out to upper surface one side of framework 213, simultaneously, formed projection electrode 214 in the extension 246 of the upper surface that is positioned at framework 213.

Used circuit board 212 is the same in the semiconductor device 210 among used wiring base plate 245 and the embodiment 30 in the present embodiment, and by substrate film 217, lead-in wire 218 and dielectric film 219 consist of.But the material ratio of used substrate film among the substrate film 217 of the circuit board of the present embodiment 245 and the embodiment 30 has been selected the material that is easier to carry out the flexible distortion.

In addition, circuit board 245 and lower surface framework 213 part in opposite directions, the same with embodiment 30, be fixed on the framework 213 with bonding agent 222.Therefore, even if extension 246 become formation on the upper surface that extends to framework 213, do not have extension 246 yet and occur from the phenomenon that framework 213 strips down and so on.

If adopt the semiconductor device 210E that has become above-mentioned formation, because projection electrode 214 will become the formation for upper surface one side that is equipped on framework 213, and do not set other the construct of heating panel 233 etc. on the upper surface of framework 213, so, can have the formation position that projection electrode 214 is set on degree of freedom ground.In addition, semiconductor device 210 ratios with the embodiment 30 of lower surface one side that projection electrode 214 is set framework 213 can make the miniaturization of device shape.

Next, the manufacture method of the semiconductor device 210E that becomes above-mentioned formation is described.Want to make semiconductor device 210E, at first will make the such circuit board 245 shown in Figure 89 (A) and Figure 103.Constituting of this circuit board 245: formed extension 246 on the limit the outer Thursday at the base portion 251 of the rectangular shape that will carry semiconductor device 211.

In addition, on the middle body of base portion 251, formed the installation hole 248 (being shown among Figure 103) of installing semiconductor device 211, from this installation hole 248 to locational ground (land) part 249 that is formed at the projection electrode 214 that will set extension 246, formed lead-in wire 218.In addition, the shape of extension 246 is made platform shape shape, so that when carrying out bending, adjacent extension 246 can not colluded together to each other.

Also have; although lead-in wire 218 has been protected with dielectric film 219, (referring to Figure 90 (E)) become and has been the formation position on ground; namely be removed at the formation position of projection electrode 214 upper nonconductive Film 219, lead-in wire 218 has revealed formation out.In addition, Figure 103 expansion shows the circuit board 245 shown in Figure 89 (A).

In upper surface one side of the circuit board 245 that becomes above-mentioned formation, in the time of face-down bonding semiconductor-on-insulator device 211, with bonding agent 222 bonding frameworks 213.At this moment, used framework 213 is owing to setting extension 246 in its periphery as mentioned above in the present embodiment, so be made the shape less than framework used among the embodiment 30 213.In addition, Figure 89 (A) shows the circuit board 245 of the state that carries semiconductor-on-insulator device 211.

Then, such as Figure 89 (A), (B) shown in, the circuit board 245 that is equipped with semiconductor device 211 and framework 213 is attached among the mould 224B.Used mould 224B has formed the cavity 250 of taking in semiconductor device 211 and framework 213 in patrix 225A in the present embodiment.

After being attached to circuit board 245 among the mould 224B, then shown in Figure 89 (C), make on the 1st half counterdie 228 that has loaded at an upper portion thereof upper sealing resin 227 by heating panel 233 moving, the compressed moulding of sealing resin.So, shown in Figure 89 (D), just become the sealed resin-sealed formation of scope for the regulation of semiconductor device 211 and circuit board 245.Simultaneously, also become as heating panel 215 and be bonded to formation on the sealing resin.

When as mentioned above after circuit board 245 has formed sealing resin 245, circuit board 245 will the demoulding from mould 224B.Figure 90 (E) shows the circuit board 245 after the mould 224B demoulding.Shown in figure, circuit board 245 has become as having formed the formation from the base portion 251 that carries semiconductor-on-insulator device 211 to the extension 246 that the side in long way extends out.Under the state after this firm demoulding, base portion 251 has become with extension 246 and has been state at grade.In the present embodiment, on the upper surface of this extension 246, will apply the 2nd bonding agent 247.

As mentioned above, behind upper surface coating the 1st bonding agent 247 that is being formed at the extension 246 on the circuit board 245, the bending operation of real crooked extension 246 with that.In bending operation, the direction that represents with arrow in figure is carried out the bending process to extension 246, this extension 246 usefulness the 2nd bonding agent 247 after the bending bond on the upper surface of framework 21.

Figure 90 (G) shows the circuit board 245 of the state after bending operation finishes.Shown in figure, adopt the way become on the upper surface that is bent to form extension 246 and is drawn out to framework 213, the result will become and be the formation position as the above ground portion 249 of the formation position of projection electrode 214, be positioned at the top of framework 213.

Then, implement projection electrode and form operation, by copying formation projection electrode 214 for example on the above ground portion 249 on 213 the top that is positioned at that the top said, the semiconductor device 210E of formation shown in Figure 88.As mentioned above, because the manufacture method of the semiconductor device 210E of the present embodiment is the same with manufacture method illustrated in embodiment 30, also can carry out with the compression forming method formation of sealing resin 215, so can the high semiconductor device 210E of fabrication reliability.In addition, extension 246 is drawn out to the processing on the upper surface of framework 213, owing to also can only carry out being bent to form of extension 246, therefore can easily carry out.

Semiconductor and the manufacture method thereof of embodiments of the invention 36 then, are described.Figure 91 is as the semiconductor device 210F of embodiments of the invention 36 and the key diagram of manufacture method thereof.In addition, in Figure 91, the formation identical with the formation that is shown in Figure 88～Figure 90 only given same label and omitted explanation.

Figure 91 (D) shows the semiconductor device 210F as embodiments of the invention 36.The formation of the semiconductor device 210E of the embodiment 5 that the formation of the semiconductor device 210F of the present embodiment and top were said is identical.But, in its manufacture method, such as Figure 91 (A), (B) shown in, be not the 2nd bonding agent 247 is coated onto first on the circuit board 245 but is coated onto that this point is different on the framework 213.Like this, the coating position of the 2nd bonding agent 247 no matter be as embodiment 35, is coated onto on the circuit board 245, or resemble be coated onto on the framework 213 the present embodiment all right.

Semiconductor device and the manufacture method thereof of embodiments of the invention 37 then, are described.Figure 92 is as the semiconductor device 210G of embodiments of the invention 37 and the key diagram of manufacture method thereof.In Figure 92, the formation identical with the formation that is shown in Figure 88～Figure 90 only given same label and omitted explanation.

Figure 92 (D) shows the semiconductor device 210G as embodiments of the invention 37.The formation of the semiconductor device 210G of the present embodiment, for the embodiment 35 of the said mistake in top and 36 semiconductor device 210E, 210F, it is different on the formation this point that turns upside down that the configuration of circuit board 245 has become.That is, shown in Figure 92 (A), circuit board 245 has become as beginning in turn lamination substrate film 217 from lower floor, lead-in wire 218, the formation of dielectric film 219.Therefore, be bent to form, when extension 246 has been positioned at the top of framework 213, on substrate film 217, forming for making projection electrode 214 and the lead-in wire 218 connecting hole 217b that link to each other.As shown in this embodiment, even if become the structure that sets upside down circuit board 245 for semiconductor device 210E, the 210F of embodiment 35 and embodiment 36, also can realize having the semiconductor device 210G with the same effect of semiconductor device 210E, the 210F of embodiment 35 and 36.In addition, in the formation of the present embodiment, not necessarily leave no choice but form dielectric film 219 can not, adopt the way that framework 213 and each bonding agent 222,247 material is decided to be the material with electrical insulating property, just can not want dielectric film 219.In this case, can reduce the cost of circuit board 245.

Next, semiconductor device and the manufacture method thereof of embodiments of the invention 38 are described.Figure 93 is as the semiconductor device 210H of embodiments of the invention 38 and the key diagram of manufacture method thereof.In Figure 93, the formation identical with the formation that is shown in Figure 88～Figure 90 only given same label and omitted explanation.

Figure 93 (D) shows the semiconductor device 210H as embodiments of the invention 38.The feature of the semiconductor device 210H of the present embodiment is: to make extension 246 bend to framework 213 1 sides among semiconductor device 210E, the 210F of the embodiment 35～embodiment 37 that said in the front, the 210G different, make extension 246 bend to heating panel 233 1 sides.Shown in Figure 93 (A), the formation of used circuit board 245 is in the present embodiment, begins in turn lamination substrate film 217 from the upper strata, lead-in wire 218 and dielectric film 219.Therefore, in the situation that extension 246 is bent to form heating panel 233 1 sides, will become following state: substrate film 217 exposes at the lower surface of semiconductor device 210H, and dielectric film 219 and heating panel 233 are in opposite directions.For this reason, on substrate film 217, formed the connecting hole 217b that is used for connecting projection electrode 214 and lead-in wire 218.In addition, owing to will be fixed to extension 246 on the heating panel 233, so on dielectric film 219, coated the 2nd bonding agent 247.

As mentioned above, set the circuit board 245 of connecting hole 217b and the 2nd bonding agent 247 shown in Figure 93 (B), extension 246 is bent to heating panel 233 1 sides as shown by arrows.Like this, when extension 246 usefulness bonding agents 247 are fixed on the heating panel 233, connecting hole 217b become below opened the state of window.Then, by copying etc. forms the projection electrode 214 with lead-in wire 218 states that are electrically connected in connecting hole 217b.Like this, just can make the semiconductor device 210H shown in Figure 93 (D).

Semiconductor device 210H with above-mentioned manufacture method is made owing to will become the formation that is positioned at the bottom of heating panel 233 for extension 246, becomes the formation that has been exposed to the outside for semiconductor device 211.Therefore, can distribute the heat that semiconductor device 211 is occured with good efficient, can improve the heat dissipation characteristics of semiconductor device 210H.

In addition, even if in the semiconductor device of the present embodiment, because extension 246 is bent, on this sweep, will form projection electrode 214, so can make the semiconductor device miniaturization.

Semiconductor device and the manufacture method thereof of embodiments of the invention 39 then, are described.Figure 94 is as the semiconductor device 210I of embodiments of the invention 39 and the key diagram of manufacture method thereof.In Figure 94, the formation identical with the formation that is shown in Figure 88～Figure 90 only given same label and omitted explanation.

Figure 94 (D) shows the semiconductor device 210I as embodiments of the invention 39.The formation of semiconductor device 210I of the present invention is identical with the formation of the semiconductor device 210H of above-described embodiment 38.But have not identical: be not the 2nd bonding agent 247 is coated onto on the circuit board 245 but is coated onto on the heating panel 233.Like this, the coating position of the 2nd bonding agent 247 no matter be as embodiment 38, is coated onto on the circuit board 245, or resemble be coated onto on the framework 213 the present embodiment all right.

Semiconductor device and the manufacture method thereof of embodiments of the invention 40 then, are described.Figure 95 is as the semiconductor device 210J of embodiments of the invention 40 and the key diagram of manufacture method thereof.In Figure 95, the formation identical with the formation that is shown in Figure 88～Figure 90 only given same label and omitted explanation.

Figure 95 (D) shows the semiconductor device 210J as embodiments of the invention 40.The feature of the semiconductor device 210J of the present embodiment is: have heat dissipation electrical fan 252 is set structure on the semiconductor device 210I that the front illustrated with Figure 94.The formation of this heat dissipation electrical fan 252 is to use such as bonding agent etc. to be fixed on semiconductor device 211 and the framework 213.As mentioned above, the semiconductor device 210J of the present embodiment is owing to having the circuit board structure identical with the semiconductor device 210I shown in Figure 94, even if therefore in the present embodiment, also can be made the formation that makes extension 246 bend to heating panel 233 1 sides on the bottom that is provided in semiconductor device 211.So, adopt to make extension 246 bend to the way of heating panel 233 1 sides, the upper surface of semiconductor device 211 just becomes as having revealed state out.

Therefore, adopt heat dissipation electrical fan 252 is set way on the exposed portions serve of partly leading device 211, with the constituent ratio that the upper surface that makes semiconductor device 211 shown in Figure 94 exposes, can dissipate with good efficient the heat of generation in semiconductor device 211.

In addition, because the upper surface of semiconductor device 211 is by 252 coverings of heat dissipation electrical fan, so the heat dissipation electrical fan also plays a part the protection member of protection semiconductor device 211.Therefore, adopt the way that heat dissipation electrical fan 252 is set, just can improve the reliability of semiconductor device 210J.

Semiconductor device and the manufacture method thereof of embodiments of the invention 41 then, are described.Figure 96 is as the semiconductor device 210K of embodiments of the invention 41 and the key diagram of manufacture method thereof.In Figure 96, the formation identical with the formation that is shown in Figure 84 and Figure 88～Figure 90 only given same label and omitted explanation.

Figure 96 (D) shows the semiconductor device 210K as embodiments of the invention 41.There is similar structure in the semiconductor device 210K of the present embodiment and front with the semiconductor device 210B of the embodiment 32 of Figure 84 explanation.Specifically, it is characterized in that: upper surface one side that the 2nd heating panel 234 is set to framework 213.The 2nd heating panel 234 is also the same with the 1st heating panel 232, is formed by the good metal of thermal diffusivity such as aluminium etc.

So, adopting is clipped in the middle semiconductor device 211 to divide at an upper portion thereof and at a lower portion thereof sets heating panel 233,234 way, just can dissipate the heat that is occured in semiconductor device 211 with better efficient, can improve the reliability of semiconductor device 210K.

The manufacture method of semiconductor device 210K then, is described.In the semiconductor device 210K of the present embodiment, what use as the method that connects semiconductor device 211 and wiring 2 plates 245 is wire 235.Therefore, for being connected with circuit board, semiconductor device 211 carries out the wire connection, at first, to bond to the 2nd heating panel 234 on the upper surface of framework 213 with bonding agent for example (not shown in FIG. come) and make it integrated, become being formed at cavity 223 on the framework 213 and form the formation of utilizing the bottom that the 2nd heating panel 234 forms.

Next, when bonding to semiconductor device 211 on the 2nd heating panel 234 in this cavity 223 with bonding agent 236, circuit board 245 is bonded on the lower surface among the figure of framework 213.Then, after setting the 2nd heating panel 234 and circuit board 245 on the framework 213, with the wire bonds method wire 235 is set between the lead-in wire 218 and semiconductor device 211 of circuit board 245.

Then, after this wire bonds processing finished, described embodiment was the same with the top, formed sealing resin 215 with the compression forming method.When carrying out this compression forming, as mentioned above, owing to setting heating panel 234 on the top of semiconductor device 211 and framework 213, so sealing resin 215 need not directly contact with patrix 225, thereby can improve release property.Figure 96 (A) shows through the above-mentioned circuit board 245 that has set upper heating panel 234, wire 235 and sealing resin 215 of processing like that.In addition, in the present embodiment, although become the formation of having used heating panel 234, also can replace with the low sheet material of heat dissipation characteristics without heating panel 234.

Then, such as Figure 98 (B), (C) shown in, make the extension 246 that is formed on the circuit board 245 bend towards said heating panel 234 1 sides in top, and be fixed on the heating panel 234 with the 2nd adhesives 247.So, adopt by copying that projection electrode 214 is set to the way on 3 above ground portions that expose 249 on the extension 246, just can make the semiconductor device 210K that is shown in Figure 96 (D).

Semiconductor device and the manufacture method thereof of embodiments of the invention 42 and embodiment 43 then, are described.Figure 97 is as the semiconductor device 210L of embodiments of the invention 42 and the key diagram of manufacture method thereof.Figure 98 is as the semiconductor device 210M of embodiments of the invention 43 and the key diagram of manufacture method thereof.In Figure 97 and Figure 98, the formation identical with the formation that is shown in Figure 88～Figure 90 and Figure 96 only given same label and omitted explanation.

Figure 97 (D) shows the semiconductor device 210L as embodiments of the invention 42.The semiconductor device 210L of the present embodiment, the semiconductor device 210K as embodiment 41 that had said with the top is the same, and its upper surface one side that constitutes at framework 213 has been provided with heating panel 234.But the semiconductor device 210L of the present embodiment is for the semiconductor device 210K as embodiment 41, and the configuration of its circuit board 245 has become the formation for turning upside down.

That is, shown in Figure 97 (A), circuit board 245 becomes as beginning in turn lamination substrate 217 from lower floor, the formation of lead-in wire 219 and dielectric film 219.So, even if become the state that turns upside down for the semiconductor device 210K circuit board 245 as embodiment 41, also can realize and semiconductor device 210L as the identical effect of the semiconductor device 210K of embodiment 41.

In addition, in the formation of the present embodiment, extend 2246 and be constituted as the formation that is bent to upside towards the 2nd heating panel 234 1 sides.In addition, in the formation of the present embodiment, not necessarily leave no choice but form dielectric film 219 can not, adopt the way that framework 213 and each bonding agent 222,247 material is decided to be the material with electrical insulating property, just can not want dielectric film 219.

Figure 98 (D) shows the semiconductor device 210M as embodiments of the invention 43.The semiconductor device 210M of the present embodiment is also the same with the semiconductor device 210K as embodiment 41 that the top had been said, and its upper surface one side that constitutes at framework 213 has been provided with heating panel 234.But, feature is: among semiconductor device 210K, the 210L for the embodiment 41 that said in the front and 42, make extension 246 bend to the 2nd heating panel 234 1 sides, in the semiconductor device 210M of the present embodiment, then make extension 246 bend to heating panel 233 1 sides.In addition, make extension 246 crooked and bond to method on the heating panel 233, identical with the semiconductor device 210H of the embodiment 38 that had before illustrated with Figure 93, therefore omit its explanation.

If adopt the semiconductor device 210M of the present embodiment, because extension 246 is constituted as the bottom that is positioned at heating panel 233, be that the 2nd heating panel 233 has been exposed to outside formation so become.For this reason, just the heat that in semiconductor device 211, is occured can be dissipated with good efficient, thereby the heat dissipation characteristics of semiconductor device 210M can be improved.Also have, even if in the semiconductor device 210M of the present embodiment, owing to extension 246 is bent, and at this sweep formation projection electrode 214, therefore can make semiconductor device 210M miniaturization.

Next, semiconductor device and the manufacture method thereof of embodiments of the invention 44 are described.Figure 99 is as the semiconductor device 210N of embodiments of the invention 44 and the key diagram of manufacture method thereof.In Figure 99, the formation identical with the formation that is shown in Figure 37 and Figure 88～Figure 90 only given same label and omitted explanation.

Figure 99 (D) shows the semiconductor device 210N as embodiments of the invention 44.With the formation that sets the framework 213A on the semiconductor device 210N of the present embodiment be: used the 2nd heating panel 234 in the semiconductor device that Figure 96 illustrates integrated with framework 213.The cavity 223A that therefore will be formed on the framework 213A has become as having the Bottom Shape that has of bottom 237.

Bottom semiconductor device 211 is fixed to bonding agent 236 on 237, circuit board 245 then quilt sets among the figure of framework 213A on the lower surface.Therefore, even if with the formation of the present embodiment, also can carry out the wire bonds between semiconductor device 211 and the circuit board 245.In addition, in the formation of the semiconductor device 210N of the present embodiment since with the semiconductor device 210K ratio of embodiment 41, can reduce components and parts number and manufacturing process, so can reduce the cost of semiconductor device 210N.

The manufacture method of semiconductor device 210N then, is described.In the manufacture method of the semiconductor device 210N of the present embodiment, as the method that semiconductor device 211 and circuit board 245 are electrically connected, also used wire 235.For this reason, at first, with bonding agent 236 semiconductor device 211 is bonded on the bottom 237 that framework 213 forms, simultaneously, circuit board 245 is bonded among the figure of framework 213A on the lower surface, then, with the wire bonds method wire 235 is set between the lead-in wire 218 and semiconductor device 211 of circuit board 245.

When this wire key with after finishing, each embodiment that said with the top is the same, forms sealing resin 215 with the compression forming method.

When carrying out this compression forming, adopt to form the way of bottom 237, framework 213A becomes and is conplane state, and sealing resin 215 need not directly contact patrix 225, thereby can improve release property.Figure 99 (A) shows through above-mentioned and has set upper heating panel 234, the circuit board 245 behind wire 235 and the sealing resin 215 after processing like that.

Then, such as Figure 96 (B), (C) shown in, upper surface one side being formed on extension 246 on the circuit board 245 and bending to framework 213A is fixed on the heating panel 234 with the 2nd bonding agent 247.Then, by copying etc. are set to projection electrode 214 the way on the above ground portion 249 of the state that exposes in extension 246, make the semiconductor device 210N shown in Figure 99 (D).

Semiconductor device and the manufacture method thereof of embodiments of the invention 45 and embodiment 46 then, are described.Figure 100 is as the semiconductor device 210P of embodiments of the invention 45 and the key diagram of manufacture method thereof.Figure 101 is as the semiconductor device 210Q of embodiments of the invention 46 and the key diagram of manufacture method thereof.In Figure 100 and Figure 101, the formation identical with the formation that is shown in Figure 88～Figure 90 and Figure 99 only given same label and omitted explanation.

Figure 100 (D) shows the semiconductor device 210P as embodiments of the invention 45.The semiconductor device 210P of the present embodiment, the semiconductor device 210N as embodiment 44 that had said with the top is the same, and it constitutes and formed bottom 237 integraty on framework 213A.But the formation of the semiconductor device 210P of the present embodiment is: become for the semiconductor device 210N as embodiment 44, the configuration of circuit board 245 has been turned upside down and has been come.

That is, shown in Figure 100 (A), circuit board 245 becomes as beginning in turn lamination substrate film 217 from lower floor, the formation of lead-in wire 219 and dielectric film 219.So, even if for the semiconductor device 210N as embodiment 44, circuit board 245 has become the state that turns upside down, and also can realize and semiconductor device 210P as the identical effect of the semiconductor device 210N of embodiment 44.

In addition, in the formation of the present embodiment, extension 246 is constituted as the formation that is bent to upside towards upper surface one side of framework 213A.In addition, in the formation of the present embodiment, not necessarily leave no choice but form dielectric film 219 can not, adopt the way that framework 213A and each bonding agent 222,247 material is decided to be the material with electrical insulating property, just can not want dielectric film 219.

Figure 101 (D) shows the semiconductor device 210Q as embodiments of the invention 46.The semiconductor device 210Q of the present embodiment is also the same with the semiconductor device 210N as embodiment 44 that the top had been said, and it constitutes and formed bottom 237 integraty on framework 213A.But, in the semiconductor device 210Q of the present embodiment, feature is: among semiconductor device 210N, the 210P for the embodiment 44 that said in the front and 45, make extension 246 bend to upper surface one side of framework 213A, in the semiconductor device 210Q of the present embodiment, then make extension 246 bend to heating panel 233 1 sides.In addition, make extension 246 crooked and bond to method on the heating panel 233, identical with the semiconductor device 210H of the embodiment 38 that had before illustrated with Figure 93, therefore omit its explanation.

If adopt the semiconductor device 210Q of the present embodiment, because extension 246 is constituted as the bottom that is positioned at heating panel 233, and will form projection electrode 214 in this position, so can make semiconductor device 210Q miniaturization.In addition, owing to not setting any construct on the top of framework 213A, so adopt the way that the material of framework 213A is chosen to be the good material of thermal diffusivity, just the heat that in semiconductor device 211, is occured can be dissipated with good efficient, thereby the heat dissipation characteristics of semiconductor device 210Q can be improved.

Semiconductor device and the manufacture method thereof of embodiments of the invention 47 then, are described.Figure 102 is as the semiconductor device 210R of embodiments of the invention 47 and the key diagram of manufacture method thereof.In Figure 102, the formation identical with the formation that is shown in Figure 88～Figure 90 and Figure 99 only given same label and omitted explanation.

Figure 102 (F) shows the semiconductor device 210R as embodiments of the invention 47.Set the framework 213A on the semiconductor device 210R of the present embodiment, have with the identical formation of the framework 213A among the semiconductor device 210N of Figure 99 explanation.Be that constituting of framework 213A has the bottom 237 that has been integrally formed.

Yet used circuit board 245A is different from the wiring plate 245 in being shown in Figure 89 (A) and Figure 103 in the present embodiment, is not formed for installing the installation hole 248 of semiconductor device 211 on base portion 251A.Here, expansion shows circuit board 245A used in the semiconductor device 210R of the present embodiment in Figure 106.

Shown in figure, the above ground portion 249 that will set projection electrode 214 in the back has been formed on the base portion 251A of circuit board 245A, extend to form base portion 251A outer Thursday each extension on the limit the lateral border part on, formed the connecting electrode 253 with semiconductor device 211 wire bonds.The lead-in wire 218 that this connecting electrode 253 and above ground portion 249 usefulness have been formed on extension 246 and the base portion 251A is electrically connected.

Become the circuit board 245 of above-mentioned formation, shown in Figure 102 (A), base portion 251A is positioned on the bottom 237 of framework 213A, is fixed on this sidepiece 237 with bonding agent (not shown in FIG. come) etc.Under this state, extension 246 becomes the state for the periphery outside outward that extends to framework 213A.In addition, in the inside that is formed at the cavity 223A on the framework 213A, carry semiconductor-on-insulator device 211 with bonding agent 236, on the lower surface of framework 213A, also coated for the bonding agent 247A that extension 246 is fixed on the framework 213A.

After on the above-mentioned bottom 237 that like that the base portion 251A of circuit board 245A is fixed to framework 213A, in the present embodiment, each embodiment that said from the top is different, and at first enforcement is bent to form the bending operation of extension 246 and need not implements resin-sealed operation.Specifically, as using shown in the arrow among Figure 102 (B), crooked extension 246 is fixed on the framework 213A with bonding agent 247A.

The way of above-mentioned bending operation is carried out in employing, shown in Figure 102 (C), in the extension 246 connecting electrodes 253 that form and semiconductor device 211 become near state.Under this state, with the wire bonds method wire 235 is set between connecting electrode 253 and the semiconductor device 211.Figure 102 (D) shows wire 235 is set state between connecting electrode 253 and the semiconductor device 211.

In the present embodiment, become following formation: after bending operation and the wire bonds operation that sets wire 235 of the above-mentioned extension 246 of bending finish, implement resin-sealed operation to form sealing resin 215.Figure 102 (E) shows the circuit board 245 that has formed sealing resin 215.This resin-sealed operation can be carried out with above-mentioned mould 224, thereby, can form sealing resin 215 with the compression forming method.In addition, in the present embodiment, with the formation of sealing resin 215 in, also used the method (referring to Figure 82) that sets heating panel 233.

To above-mentioned such when having formed sealing resin 215, form projection electrodes 214 with for example replica method at above ground portion 249 with that, make the semiconductor device 210R that is shown in Figure 102.So, the semiconductor device 210R of manufacturing does not form cavity 223A owing to the position that will form outstanding 214 is bottom 237 1 sides of framework 213A on this position, so can be the formation zone of the whole zone of bottom 237 as projection electrode 214.For this reason, can set the step pitch that sets of projection electrode 214 widely, perhaps can increase the number of projection electrode 214.

Other embodiment of circuit board 245 used among semiconductor device 210E～210R of each embodiment that said the top then, are described with Figure 104～Figure 110.In Figure 104～Figure 110, the formation corresponding with the formation of the circuit board 245 that had before illustrated with Figure 103 only given same label and omitted explanation.

The circuit board 245B that is shown in Figure 104 is the circuit board of flip-chip bonded semiconductor device 211 types (below be called the TAB type).Therefore, inner lead portion 220 is made the formation of the inside that is projected into installation hole 243.The feature of the circuit board 245B of the present embodiment is: in bending operation, removed the substrate film 217 that is bent the position.The way of substrate film 217 is removed in employing, because lead-in wire 218 will become the state that exposes, weakened is so set the solder resist (layer) 245 that is easy to deflection on the position removing of this substrate film 217.

If adopt the circuit board 245B made above-mentioned formation, then can prevent the generation of the bulge of circuit board 245B on bending position, can improve circuit board 245 and framework 213,213A, the being adjacent to property between the heating panel 233,234 etc.So, owing to can prevent that circuit board 245B from from framework 213,213A, peeling off on the heating panel 233,234, so can improve the reliability of semiconductor device 210E～210R.In addition, as described above, adopt to make circuit board 245B and framework 213,213A, heating panel 233,234 etc. becomes the way of the state that has been adjacent to, and can also make semiconductor device 210E～210R miniaturization.

In addition, the feature that is shown in the circuit board 245C of Figure 105 is: the circuit board that makes semiconductor device 211 and lead-in wire 218 maqting types (below, be called the wire connecting-type) with the wire bonds method.Therefore, different from circuit board 245, the 245A of the TAB type that is shown in Figure 103 and Figure 104, inner lead portion 220 is not projected into the inside of installation hole 248.

In addition, be shown in the circuit board 245A among Figure 106, said owing to the front, omit its explanation here.

In addition, the circuit board 245D that is shown in Figure 107 is the circuit board of TAB type, in the present embodiment, it is characterized in that: the shape of each extension 246A is triangle.So, adopt extension 246A is become triangular shaped way, just can set pad portion 249 along consisting of hypotenuse.

So, pad portion 249 that just can be adjacent (namely, projection electrode 249) set step pitch and widen, can be in order to carry out the formation of pad portion 249, simultaneously, can also make and partly lead device 211 densifications, even if so that increase the number of projection electrode 214, also can deal with fully this.In addition, in being shown in the embodiment of Figure 107, although what illustrate is the example that the shape of extension 246A is become leg-of-mutton shape, but the shape of extension 246A is not subject to triangle, so long as can widen the shape that sets step pitch of pad portion 249, it also can be other shape.

In addition, the circuit board 245E that is shown in Figure 108 is the circuit board of TAB type, it is characterized in that: the shape of extension 246A has become the leg-of-mutton while, has removed the position that is bent of substrate film 217.If adopt the circuit board 245E of the present embodiment, owing to can prevent that circuit board 245B is from framework 213,213A, peel off on the heating panel 233,234 etc., so can improve miniaturization and the reliability of device, and, can also make the formation facilitation and the densification that can deal with semiconductor device 211 of pad 249.In addition, even if in the present embodiment, also set to protect the solder resist (layer) 254 of lead-in wire 218 on the position removing of substrate film 217.

In addition, circuit board 245F, the 245G, the 245H that are shown in Figure 109 are the circuit boards of TAB type, and feature is: adopt the way that forms connecting hole at substrate film 217 (using the region representation of band point among the figure), form above ground portion 249.The extension 246 that constitutes that is shown in the circuit board 245F of Figure 109 (A) is made as a whole with base portion 251, setting solder resist (layer) behind the substrate film 217 of having removed bent portion and be shown in constituting of Figure 109 (B) circuit board 245G, be shown in the circuit board 245H of Figure 109 (C), then on base portion 251A, formed above ground portion 249.

Circuit board 245F, the 245G of the present embodiment can be applied to the semiconductor device 210G (referring to Figure 92) that had before illustrated, 210H (referring to Figure 93), 210I (referring to Figure 94), 210J (referring to Figure 95) 210L (referring to Figure 97), 210M (referring to Figure 98), 210P (referring to Figure 100) goes among the 210Q (referring to Figure 101).In addition, the not line substrate 245H of the present embodiment can be applied among the semiconductor device 210R (referring to Figure 102) that has before illustrated and go.

Figure 109 shows before the circuit board 245I as the variation of circuit board 245A that illustrated with Figure 106, specifically, enlarges the forming section that shows connecting electrode 253 region representation of band point (among the figure with).

In the circuit board 245I of the present embodiment, feature is: connecting electrode 253 is set as making it to become be the jagged while, the corner part 253a of each connecting electrode 253 is formed have curve shape.Adopt becoming jagged way owing to can enlarge the area of each connecting electrode 253, so and semiconductor device 211 between set wire 235 when, can simplify wire bonds and process (processing is electrically connected).

In addition, employing makes the corner part 253a of each connecting electrode 253 form the way with curve shape, when for example making semiconductor device 211 and connecting electrode 253 carry out wire bonds, the stress that occurs when touching bonding tool (supersonic bonding instrument) used in the engaging between wire 235 and connecting electrode 253 can be dispersed in, thereby the processing that is electrically connected between wire 235 and the connecting electrode 253 can be positively carried out.

Semiconductor device and the manufacture method thereof of embodiments of the invention 48 then, are described with Figure 111～Figure 118.In Figure 111～Figure 118, the formation corresponding with the formation of the semiconductor device 210E of the embodiment 35 that is shown in Figure 88～Figure 90 only given same label and omitted explanation.

Figure 111 shows the semiconductor device 210S of embodiments of the invention 48, and Figure 112 and Figure 113 show the manufacture method of semiconductor device 210S.The feature of the semiconductor device 210S of the present embodiment is: used so-called mechanical projection electrode 255 as projection electrode.The formation of machinery projection electrode 255 is: adopt the way that the lead-in wire 218 that is formed on the circuit board 245J is carried out plastic working, make it to highlight to form projection electrode from circuit board 245J.

As mentioned above, because mechanical projection electrode 255 adopts 218 ways of carrying out plastic working that go between are formed, so as illustrated among each illustrated embodiment of front, can be not in the situation that the necessary sphere material of by copying therefore can reduce the components and parts number and operation is simplified.Also have as plastic processing method, because can be with for example using punch press (instrument) 218 only to carry out the simple processing of punch process to going between, so can form the mechanical projection electrode 255 (projection electrode) of cheap and easy formation.

Secondly, the manufacture method of semiconductor device 210S is described.Figure 112 (A) shows the state after the circuit board 245J that has formed mechanical projection electrode 255 has implemented resin-sealed operation.Shown in figure, in the present embodiment, mechanical projection electrode 255 has been formed on the extension 246 of circuit board 245J.

Show the part (forming section of mechanical projection electrode 255) that in Figure 112 (A), represents with arrow A in this expansion of Figure 112 (B)～112 (D) here.Shown in each figure, the formation of mechanical projection electrode 255 can become all forms.Below, each formation is described.

Be shown in the mechanical projection electrode 255A of Figure 112 (B), it is characterized in that: adopt 218 ways that make it with dielectric film 219 integraty ground punch process (plastic working) that go between, make it to highlight the connecting hole 217b on being formed on substrate film 217, adopt the way that lead-in wire 218 and dielectric film 219 are highlighted, core (core) 256 is set will be in the recess that the back side of mechanical projection electrode 255A one side forms again.

The mechanical projection electrode 255A of above-mentioned formation, owing to be that lead-in wire 218 carries out punch process with dielectric film 219, so do not need the processing of removing of dielectric film 219, thereby can simplify the formation operation of mechanical projection electrode 255A.In addition, owing in the recess that the back side of mechanical projection electrode 255A one side will form inevitably, will set core 155A, so when assembling semiconductor device 210S, even if in the situation that mechanical projection electrode 255A is urged, the thing that mechanical projection electrode 255A can not deform and so on yet.

In the formation shown in Figure 112 (C), adopt after having removed dielectric film 219, to 218 ways of carrying out punch process (plastic working) that go between, form mechanical projection electrode 255B.In addition, in the present embodiment, also in the recess of the back side one side that will be formed on mechanical projection electrode 255B, set core 256.

The mechanical projection electrode 255B of above-mentioned formation owing to only 218 carrying out punch process to going between, so carry out the constituent ratio of Figure 112 (B) of punch process with dielectric film 219, can form with good precision the shape of mechanical projection electrode 255B.Namely, although it is believed that this can be influential for the shape that exists inhomogenous mechanical projection electrode 255B on the thickness that is formed in dielectric film 219, but in the formation of the present embodiment, but can not affect the thickness of dielectric film 219, therefore can form the high mechanical projection electrode 255B of precision.

The feature that is shown in the formation of Figure 112 (D) is: in the formation when above-mentioned Figure 112 (B) institute, without core 256, the 2nd bonding agent 247 is filled into and will be formed in the recess of the back side one side of mechanical projection electrode 255C.

As mentioned above, although the 2nd bonding agent 247 plays a part extension 246 is fixed on framework 213 grades, adopt the way that is cured, the 2nd bonding agent 247 is become as having the hardness of regulation.Therefore, adopt to make the 2nd bonding agent 247 be filled into the way of going in the above-mentioned recess, can make the 2nd bonding agent 247 play a part with core 256 equal.

So, adopt the 2nd bonding and 247 ways that are used as core 256, and be shown in Figure 112 (B), constituent ratio (C) when can reducing the components and parts number, can also be simplified the formation operation of mechanical projection electrode 255C.

Though when with in each above-mentioned formation method which after circuit board 245J has formed mechanical projection electrode 255, just semiconductor device 211 flip-chip bonded to this circuit board 245J, then, implement resin-sealed operation with the compression forming method, become the state shown in Figure 113.Then, shown in Figure 113, implement bending operation, extension 246 is bent to upper surface one side of framework 213, be fixed on the framework 213 with the 2nd bonding agent 247.With this, make the semiconductor device 210S shown in Figure 111.

Semiconductor device 210T and manufacture method thereof as embodiments of the invention 49 have been gone out during Figure 114.Formerly among the semiconductor device 210S and manufacture method thereof with Figure 111～Figure 113 explanation, as the method for attachment between semiconductor device 211 and the circuit board 245J, used flip-chip method.

To this, in the present embodiment, shown in Figure 114, feature is: with wire 235 semiconductor device 211 and circuit board 245J are coupled together.So, even if used the formation of mechanical projection electrode 255, no matter also can be with any method in TAB method or the wire bonds method.In addition, for the semiconductor device 210S and the manufacture method thereof that had illustrated with Figure 111～Figure 113, owing to the present embodiment only is that semiconductor device 211 is different from the connection structure between the circuit board 245J, other formation is all identical, so omit its explanation.

Semiconductor device and the manufacture method thereof of embodiments of the invention 50 then, are described.Figure 115 is as the semiconductor device 210U of embodiments of the invention 50 and the key diagram of manufacture method thereof.In Figure 115, the formation identical with the formation that is shown in Figure 102 and Figure 111～Figure 112 only given same label and omitted explanation.

Figure 115 (F) shows the semiconductor device 210U as embodiments of the invention 50.The framework 213A that has set on the semiconductor device 210U of the present embodiment has identical formation with the semiconductor device 210R that illustrated with Figure 102.That is, constituting of framework 213A has the bottom 237 of integraty ground formation.In addition, used constituting of circuit board 245K formed projection electrode 255 on base portion 251A in the present embodiment.

Become the circuit board 245K of above-mentioned formation, shown in Figure 115 (A), base portion 251A is positioned the bottom of framework 213A and divides 237 tops, and is fixed on this sidepiece 237 with the 2nd bonding agent 247 on the lower surface that sets circuit board 245K among the figure.Under this state, extension 246 becomes as extend to the state in the outside from the periphery of framework 213A.In addition, be formed at the inside of the cavity 223A on the framework 213A with bonding agent 236 lift-launch semiconductor-on-insulator devices 211.

After on the above-mentioned bottom 237 that like that the base portion 251A of circuit board 245A is fixed to framework 213A, need not implement resin-sealed operation, such as Figure 115 (B), (C) shown in, crooked extension 246 is fixed on the framework 213A with bonding agent 247A.Then, use the wire bonds method, set wire 235 at

semiconductor device

211 and 253 of connecting electrodes.Figure 114 (D) shows wire 235 is set state between connecting electrode 253 and the semiconductor device 211.

After having set as above wire 235, implement with that resin-sealed operation.Figure 115 (E) shows circuit board 245K is attached to state among the mould 224C.In the present embodiment, owing to before implementing resin-sealed operation, having formed mechanical projection electrode 255 at circuit board 245K, so in the patrix 225B of mould 224C, formed the patchhole 257 that inserts mechanical projection electrode 255.

In the present embodiment, in the formation of sealing resin, also used the compression forming method.Also have, in the present embodiment, in the time of with the formation of sealing resin 215, also used the method that sets heating panel 233.Then, adopt the way that forms sealing resin 215, make the semiconductor device 210U shown in the figure 115 (F).

The semiconductor device 210U that makes as described above, the same with the semiconductor device 210R that is shown in Figure 102, the formation position of machinery projection electrode 255 will become the bottom 237 of framework 213A, owing on this position, not forming cavity 223A, can all assign the whole zone of bottom 237 as the formation zone of mechanical projection electrode 255.Therefore, or can set the step pitch that sets of mechanical projection electrode 255 widely, or can increase the number that sets of mechanical projection electrode 255.

Figure 116 shows the various semiconductor devices of having used mechanical projection electrode 255.Figure 116 (A) is among the semiconductor device 10A of the embodiment 31 that formerly illustrated with Figure 81, has used the semiconductor device 210V that mechanical projection electrode 255 consists of as projection electrode.Figure 116 (B) is among the semiconductor device 10B of the embodiment 32 that formerly illustrated with Figure 84, has used the semiconductor device 210W that mechanical projection electrode 255 consists of as projection electrode.Also have, Figure 116 (C) is among the semiconductor device 10D of the embodiment 34 that formerly illustrated with Figure 89, has used the semiconductor device 210X that mechanical projection electrode 255 consists of as projection electrode.

As shown in each figure, even if deposit among 210V～210X at the semiconductor device that is not bent to form extension 246, also can application machine projection electrode 255.In addition, among each the semiconductor device 210V～210X in being shown in Figure 116, formation and above-mentioned semiconductor device 210A beyond the mechanical projection electrode 255,210B, 210D are the same, therefore omit its explanation.

Semiconductor device and the manufacture method thereof of embodiments of the invention 51 then, are described.Figure 117 is as the semiconductor device 210Y of embodiments of the invention 51 and the key diagram of manufacture method thereof.In Figure 117, the formation identical with the formation that is shown in Figure 115 only given same label and omitted explanation.

Figure 117 (E) shows the semiconductor device 210Y as embodiments of the invention 51.The feature of the semiconductor device 210Y of the present embodiment is: for said each embodiment in front, made framework 213 is not set, the formation of 213A.Therefore, semiconductor device 211 has just become the formation that only keeps with sealing resin.So, employing becomes removal framework 213,213A, the way that only keeps the formation of semiconductor device 211 with sealing resin, can be the further miniaturization of semiconductor device 210Y, simultaneously, can also be minimized cost and assembling operation is simplified because reducing the components and parts number.

Then explanation has become the manufacture method of the semiconductor device 210Y of above-mentioned formation.Although what enumerate as projection electrode in the following description is the example of having used mechanical projection electrode 255, for the semiconductor device of having used the projection electrode beyond the mechanical projection electrode, following semiconductor making method also is suitable for.

Figure 117 (A) shows when being pre-formed mechanical projection electrode 255, and the circuit board 246L that has also carried semiconductor-on-insulator device 211 is installed in the state in the mould.In the present embodiment, with wire 235 semiconductor device 211 and circuit board 245L are electrically connected.In addition, the mould 224C used at the present embodiment is the same with the mould that is shown in Figure 115 (B), has formed the patchhole 257 that inserts mechanical projection electrode 255 in patrix 225B.

After being attached to circuit board 246L among the mould 24C, mobile patrix 225B and counterdie 226 make it close, shown in Figure 117 (B), will become as circuit board 246L being clamped in the state between patrix 225B and the counterdie 226.

Then, shown in Figure 117 (C), make on the 1st patrix 228 and move, sealing resin is with the wiper seal semiconductor device 211 of regulation, wire 235 etc.That is, in the present embodiment, in the formation of sealing resin 215, also can use the compression forming method.In the present embodiment, owing to having become heating panel 233 mountings being carried out resin-sealed formation under the state on the top of the 1st half counterdie 228, so can in the formation of sealing resin, set heating panel 233.

Figure 117 (D) shows the circuit board 245L state of the demoulding from mould 224C that has formed as above sealing resin 215 that makes.Under this state, circuit board 245L has become the state that has formed the unwanted extension 258 that the sidepiece at formed sealing resin 215 extends out.This unwanted extension 258 just cuts off after having carried out demoulding processing and removes, and makes the semiconductor device 210Y shown in Figure 117 (E) with this.Figure 118 shows the semiconductor device 310A as embodiments of the invention 54.Figure 118 (A) is the profile of semiconductor device 310A, and Figure 118 (B) is the end view of semiconductor device 310A.

The formation of the semiconductor device 30A of the present embodiment is extremely simple, divides roughly, and by semiconductor device 312, battery lead plate 314A, sealing resin 316A and outstanding terminal 318 consist of.Semiconductor device 312 (semiconductor chip) is the device that has formed electronic circuit in Semiconductor substrate, has formed a plurality of projection electrodes 322 in its fitting surface one side.The formation of these a plurality of projection electrodes 322 is: by copying sets for example solder ball, and joins on the battery lead plate 314 with the back bonding method.In addition, can also be with Reflow Soldering etc.

As mentioned above, adopt to make semiconductor device 312 and battery lead plate 314 carry out the way of flip-chip bonded, with the constituent ratio that is connected with wire, can make to engage the little spatialization in needed space, can make semiconductor device 310A miniaturization.In addition, owing to can shorten the length of arrangement wire of office, junction surface, so can also reduce impedance, can improve electrology characteristic.Have again, owing to can make the narrow pitch step pitch of 322 of adjacent projection electrodes, therefore can also deal with multi-pipe pin.

In addition, above-mentioned battery lead plate 314 plays a part so-called inserter, is formed by the conductive metal of for example copper alloy and so on.This battery lead plate 314 shown in Figure 119 (A), consists of (as described later, Figure 119 (A) show the lead frame state battery lead plate 314) by a plurality of metal plate patterns 326 of the graphics shape with regulation.

This metal plate pattern 326, when the projection electrode 322 of semiconductor device 312 being joined among the figure on the lower surface, outstanding terminal 318 join to from as on the different face of the face that sets of the semiconductor device 312 of upper surface among the figure.Therefore, metal plate pattern 326 play a part to be electrically connected projection electrode 322 and outstanding terminal 318.In addition, shown in Figure 118 (B), expose from the side of sealing resin 316A the end of metal plate pattern 326, has formed sidepiece terminal 320.

Outstanding terminal 318 is spherical outstanding (projection electrodes) that for example are made of scolding tin, as mentioned above, has joined on the battery lead plate 314.Should be electrically connected on the corresponding set projection electrode 322 by metal plate pattern by outstanding terminal 318.

Sealing resin 316A forms semiconductor device 312, and the part of battery lead plate 314 and projection electrode 318 seals.Sealing resin 316A is polyimides for example, and epoxy resin etc. have the resin of insulating properties, form the size of the minimum that is enough to covering protection semiconductor device 312.Therefore, can make the semiconductor device miniaturization.

In addition, under the attitude that has formed sealing resin 316A, constituting of the back side 328 of semiconductor device 312 exposed from sealing resin 316A.Because the back side 328 of semiconductor device 312 does not form electronic circuit etc., and is the higher position of strength ratio, so even if the back side 328 is exposed what can not produce yet improper especially from sealing resin 316A.In addition by means of the back side is exposed from sealing resin 316A, because the heat that occurs in semiconductor device 312 is from this back side 328 to external cooling, so, can improve on the contrary the radiating efficiency of semiconductor device 310A.

As mentioned above, under the state that has formed sealing resin 316A, expose from the side of sealing resin 316A the end of battery lead plate 314, has formed sidepiece terminal 320.As mentioned above, adopt to constitute to make the therefrom way exposed of the side of sealing resin 316A of sidepiece terminal 320, just can be sidepiece terminal 320 as outstanding terminal the time, can also be used as the external connection terminals that is connected with other substrate or device.

Figure 28 shows the assembling structure as the semiconductor device of embodiments of the invention 54, shows the semiconductor device 210A of above-mentioned formation is assembled to the state that assembles on the substrate 332.Shown in figure, under confined state, the result become for outstanding terminal 318 the bottom surface of sealing resin 316A with assemble between the substrate 32, can not observe from the outside or the testing tool of linking probe etc.

But, in semiconductor device 310A, because its formation is that sidepiece terminal 320 is exposed from sealing resin 316A, so even if after on semiconductor device 312 being assembled to assembling substrate 332, also can carry out with this sidepiece terminal 320 action test of semiconductor device 310A.Thereby, can easily carry out the discovery of defective semiconductor device, rate of finished products and reliability in the time of can improving assembling.

Turn back to again Figure 118, go on to say semiconductor device 310A.

Above-mentioned sealing resin 316A not only covers semiconductor device 312, also forms on the face that engages upper outstanding terminal 318 with battery lead plate 314.Therefore, outstanding terminal 318 also plays a part to protect with sealing resin 316A.Thereby, can prevent owing to adding that external force etc. makes outstanding terminal 318 break away from from semiconductor device 310A.In addition because sealing resin has insulating properties, so even if the setting in the high situation of density of outstanding terminal 318 (that is, narrow step pitch situation under), also can prevent from being short-circuited between outstanding terminal adjacent when assembling.

Also have, outstanding terminal 318, under the state that has formed sealing resin 316A, it constitutes from sealing resin 316A and exposes.Therefore, in when assembling, can positively be connected to outstanding terminal 318 and assemble on the substrate 332, in addition, shown in Figure 128, can be the same with BGA (Ball Grid Array) treat semiconductor device 310A, can improve assembling.

Be directed to the battery lead plate 314A that is set on the semiconductor device 310A here.

As mentioned above, because battery lead plate 314A is metallic plate, so adopt way in the sealing resin 316A that makes this battery lead plate 314A be located at protection semiconductor device 312, just can make 314A under the battery lead plate play the effect of the reinforcement of enhancing sealing resin 316A.Therefore, the protection of semiconductor device 312 can be more positively carried out, thereby the reliability of semiconductor device 310A can be improved.In addition, battery lead plate 314A is between the outstanding terminal 318 that works as external connection terminals and sidepiece terminal 320 and semiconductor device 312.Therefore, the formation that from resembling prior art external connection terminals is directly connected on the semiconductor device is different, in the inside of semiconductor device 310A, uses battery lead plate 314A, can be at semiconductor device 312 and outstanding terminal 318, the cabling that connects up between the sidepiece terminal 320.Therefore, adopt the way that battery lead plate 314A is set, just can improve the degree of freedom of layout of the terminal of semiconductor device 312 and external connection terminals (giving prominence to terminal 318, sidepiece terminal 320).

Also have, because battery lead plate 314A is made of conductive metal, and in general, conductive metal (in the situation that the present embodiment, copper or gold) thermal conductivity better than sealing resin 316A, so the heat that in semiconductor device 312, occurs by battery lead plate 314A to external cooling.Therefore, can dissipate the heat that in semiconductor device 312, is occured with good efficient, can assure stably working of semiconductor device 312.

The manufacture method of the semiconductor device 310A of above-mentioned formation then, is described.

Figure 119～Figure 122 is the key diagram of semiconductor device 310A and manufacture method thereof.In Figure 119～Figure 122, the formation corresponding with the formation that is shown in Figure 118 only given same label and omitted explanation.

The manufacture method of the present embodiment has: battery lead plate forms operation; The chip carrying operation; Outstanding terminal forms operation; Sealing resin forms operation and cuts off operation.Form in the operation at battery lead plate, adopt the metallic plate to for example being consisted of by the copper alloy (for example, Cu-Ni-Sn system) as lead material to carry out the way that figure is shaped and processes, form the lead frame 324A with a plurality of battery lead plates 314.Form the figure shaping of implementing in the operation at this battery lead plate and process, carry out with etching method or punch process method.This etching method or punch process method, in general semiconductor manufacturing process, this lead frame forming method is common gimmick commonly used.Therefore, adopt the way with etching method or punch process method, need not increase equipment, just can form lead frame 324.

Figure 119 (A) enlarges the part that shows lead frame 324A, shows 4 battery lead plate 314A.In the manufacture method of the present embodiment, carry out a plurality of simultaneously processing owing to having constituted, so described as figure, 324A has formed a plurality of battery lead plate 314A at lead-in wire.

This battery lead plate 314A as mentioned above, is made of a plurality of metal plate patterns 326.This metal plate pattern 326 is owing to can set arbitrarily wiring pattern in above-mentioned figure is shaped processing, so, therefore the cabling that can connect up with battery lead plate 314A, can make the terminal layout of the external connection terminals that will form at battery lead plate 314A have the degree of freedom.

On the other hand, Figure 119 (B) shows the semiconductor device 312 that carries on the above-mentioned battery lead plate 314A (lead frame 324A) (312A～312C).In the present embodiment, become the formation of carrying 3 semiconductor device 312A～312C at a battery lead plate 314A.In addition, in each semiconductor device 312A～312C, also be equipped with respectively for the projection electrode 322 that is electrically connected with battery lead plate 314A.

Shown in figure, the size of semiconductor device 312A～312C is not necessarily the same.In addition, be formed at metal plate pattern 326 on each battery lead plate 314A be constituted as be formed on each semiconductor device 312A～312C on the formation position of projection electrode 322 corresponding.

After above-mentioned battery lead plate forms the operation end, implement with that the chip carrying operation.In this chip carrying operation, semiconductor device 312A～312C is carried on the battery lead plate 214A, processing is electrically connected.Figure 120 (A) (B) shows semiconductor device 312A～312C is carried state on the battery lead plate 314A.

In the present embodiment, as the method that semiconductor device 312A～312C is joined on the battery lead plate 314A, adopted electrode 322 is directly joined to flip-chip method on the battery lead plate 314A.Adopt the way with this flip-chip method, as mentioned above, when can make the little spatialization of bonding area between semiconductor device 312A～312C and the battery lead plate 314A, can also reduce the connection impedance.

After said chip is carried the operation end, implement with that outstanding terminal and form operation.Should form operation at the outstanding terminal 318 of assigned position formation of the metal plate pattern 326 that consists of battery lead plate 314A by outstanding terminal.Outstanding terminal 318 usefulness solder ball consist of, and join on the metal plate pattern 326 with for example replica method.Figure 121 shows the battery lead plate 314A that sets outstanding terminal 318.Should give prominence to terminal 318, as mentioned above, adopt the way of the wiring pattern of suitably selected metal plate pattern 316, be set as rectangular.

After above-mentioned outstanding terminal forms the operation end, then implement sealing resin and form operation.Form in the operation at the sealing resin, (312A～312C) the lead frame 324A with outstanding terminal 318 is attached in the mould, forms sealing resin 316A with the compression forming method having set semiconductor device 312.Adopt the way that forms sealing resin 316A, semiconductor device 312 and battery lead plate 314A are sealed.Therefore, the sealed resin 316A of semiconductor device 312 and battery lead plate 314A protection, thereby, can improve the reliability of semiconductor device 310A.

Figure 122 shows the lead frame 324A that has formed sealing resin 316A.Shown in figure, under the state that has formed sealing resin 316A, semiconductor device 312 (expose from sealing resin 316A, and outstanding terminal 318 is constituted as its top established part is highlighted from sealing resin 316A by the back side of 312A～312C).So, employing is exposed the back side of semiconductor device 312 from sealing resin 316A way, when can improve radiating efficiency, employing highlights the head portion of outstanding terminal 318 from sealing resin 316A way can improve assembling.

After above-mentioned sealing resin forms the operation end, then implement to cut off operation.Cut off in the operation at this, in order to carry out a plurality of aggregation process, cut off sealing resin 316A and lead frame 324A (battery lead plate 314A) in each position, boundary (dotted line position that represents with A-A among Figure 122) of the semiconductor device of a plurality of formation.With this, form the semiconductor device 310A shown in Figure 118.

As mentioned above, adopt the way of cutting off lead frame 324A (battery lead plate 314A) with sealing resin 316A, the result just becomes as the off-position of battery lead plate 314A and must expose from the side of sealing resin 316A, forms sidepiece 320.Therefore, can be this sidepiece 320 as external connection terminals.

The manufacture method of the semiconductor device 310B of embodiment 55 then, is described.

Figure 123 (A) shows the profile of semiconductor device 310B, and Figure 123 (B) shows the ground plan of semiconductor device 310B.In Figure 123, the formation identical with the semiconductor device 310A of the embodiment 54 that had illustrated with Figure 118 only given same label and omitted explanation.In following each embodiment that will illustrate, also carry out same processing.

The formation of the semiconductor device 310A of above-described embodiment 54 is: form outstanding terminal 318 at battery lead plate 314A, this outstanding terminal 318 is exposed from sealing resin 316A.To this, the feature of the semiconductor device 310B of the present embodiment is: outstanding terminal 318 is not set, battery lead plate 314A is directly exposed from sealing resin 316B.

The semiconductor device 310B of the present embodiment because protruding end 318 not being set, can reducing the components and parts number and can simplify manufacturing process.In addition, because battery lead plate 314A except exposing from the side of sealing resin 316B, also exposes from the bottom surface, form external connection terminals, so can assemble in side and this two side of bottom surface.

Figure 130 shows semiconductor device 310B is assembled to the structure that assembles on the substrate 332.Shown in figure, semiconductor device 310B has faced down with scolding tin 336 and has been assembled on the assembling substrate 332.At this moment, scolding tin 336 not only on the bottom surface portions of battery lead plate 314A, also welds round sidepiece terminal 320 on lateral parts.

In addition, the semiconductor device 310C of the embodiment 56 that the semiconductor device 310B of the present embodiment can also will say with the back is the same, only assembles with sidepiece terminal 320, thereby can improve the degree of freedom of assembling structure.

The manufacture method of the semiconductor device 310C of embodiment 56 then, is described.

Figure 124 is the key diagram of the semiconductor device 310C of embodiment 56, and Figure 124 (A) shows the section of semiconductor device 310C, Figure 124 (B) show semiconductor device 310C above.

The formation of the semiconductor device 310B of above-described embodiment 55 is: the bottom surface of battery lead plate 314A and side end are all exposed from sealing resin 316B, but the feature of the semiconductor device 310C of the present embodiment is: the side part of battery lead plate 314A is exposed from sealing resin 316C, formed sidepiece terminal 320.

In the semiconductor device 310C of the present embodiment, because it constitutes: remaining sidepiece terminal 320, battery lead plate 314A is buried underground among the sealing resin 316C, so can prevent from because of external force or thermal stress battery lead plate 314A being stripped down from sealing resin 316C, can improve the reliability of semiconductor device 310C.

The manufacture method of the semiconductor device 310D of embodiment 57 then, is described.

Figure 125 is the key diagram of the semiconductor device 310D of embodiment 57, Figure 125 (A) shows the section of semiconductor device 310D, Figure 125 (B) show semiconductor device 310D above, Figure 125 (C) shows the bottom surface of semiconductor device 310D.

The feature of the semiconductor device 310D of the present embodiment is: formed standing shape terminal (outstanding terminal) 330 on battery lead plate 314B.This standing shape terminal 330 adopts the way formation of battery lead plate 314B being carried out plastic working (for example, punch process), so it constitutes: make standing shape terminal 330 and battery lead plate 314B integrated.In addition, can also replace the formation that becomes the other object of installing conductivity.

In addition, the formation of standing shape terminal 330 is processed and can be formed together in above-mentioned electrode forming process.Therefore, adopt the way that forms standing shape terminal 330, can not make manufacturing process's complicated, in addition, the constituent ratio with form standing shape terminal 330 with other member can reduce the components and parts number.

The standing shape terminal 330 of above-mentioned formation, such as Figure 125 (A), (B) shown in, it constitutes from the bottom surface of sealing resin 316D and exposes.So, adopt the way that standing shape terminal 330 is exposed from the bottom surface of sealing resin 316D, just can make standing shape terminal 330 play the effect of external connection terminals.

Figure 134 shows above-mentioned semiconductor device 310D is assembled to the state that assembles on the substrate 332.Shown in figure, although semiconductor device 310D is assembled on the assembling substrate 332 with scolding tin 354, but at this moment constituting of standing shape terminal 330 revealed out from bottom surface and the side of sealing resin 316D, so, can increase and scolding tin 354 between bonding area, thereby, can positively be connected to standing shape terminal 330 on the aglucon plate 332.

In addition, because constituting except prominent shape terminal 330 and sidepiece terminal 320 of battery lead plate 314B all is embedded among the sealing resin 316D, can make 330 insulation of adjacent standing shape terminal with sealing resin 316D.For this reason, when assembling not can because of scolding tin 354 in the thing that 330 of standing shape terminals are short-circuited and so on, can improve the reliability of assembling.

Figure 126 and Figure 127 show the manufacture method of the semiconductor device of embodiment 55, show the manufacture method of above-mentioned semiconductor device 310D.

The manufacture method of the present embodiment, because the manufacture method for the embodiment 54 that had illustrated with Figure 119～Figure 122, only battery lead plate forms operation, it is different with the cut-out operation that sealing resin forms operation, other operation is all the same, so in the following description, only battery lead plate being formed operation describes.

Battery lead plate at the present embodiment forms in the operation, when formation has had the lead frame 324B of battery lead plate 314B, standing shape terminal 330 is also carried out plastic working together.Why resembling the cut-out processing that together is used to form in this wise battery lead plate 314B and be used for carrying out the plastic working of standing shape terminal 330, is because adopt the way of suitably setting the formation of the mould that forms lead frame 324B, can be easy to realize.

Figure 126 shows to adopt and implements the lead frame 324B that battery lead plate forms the way formation of operation.In the figure, be exactly standing shape terminal 330 with the part of shadow representation, this standing shape terminal 330 has the shape that highlights for battery lead plate 314B.So, if adopt the present embodiment, because can be in the formation of in the formation of battery lead plate 314B, carrying out standing shape terminal 330, so can simplify the manufacturing process of semiconductor device 310D.

In addition, shown in Figure 127, in sealing resin forms operation, sealing resin 316D formed standing shape terminal 330 is exposed from sealing resin 316D.In order resembling standing shape terminal 330 to be exposed from sealing resin 316D, to adopt to become the way that the cavity face that makes mould used in sealing resin formation operation touches the state on the standing shape terminal 330, just can easily realize.

In addition, the off-position in cutting off operation is positioned at the dotted line position that represents with A-A among Figure 127, is chosen to be the side that makes standing shape terminal 330 and exposes from the side of sealing resin 316D.Therefore, shown in Figure 134, when assembling, scolding tin 354 can always around the side to standing shape terminal 330, can positively weld.

Then, illustrate the semiconductor device 310A～310D of the various embodiments described above is assembled to the assembling structure that gets on of assembling substrate 332.

Figure 128～Figure 134 shows the assembling structure as semiconductor device 310A～310D of embodiment 54～60.Be shown in the assembling structure of embodiment 54 of the semiconductor device 310A of Figure 128 for assembling, assembling is shown in the assembling structure of embodiment 56 of the semiconductor device 310B of Figure 130, and the assembling structure of embodiment 60 that assembling is shown in the semiconductor device 310D of Figure 134 illustrated.So omit its explanation here.

Figure 129 shows the assembling structure of the semiconductor device of embodiment 55.

The assembling structure of the present embodiment is the assembling structure as an example of the semiconductor device 310A of embodiment 54 example, it is characterized in that: assembling is set on the outstanding terminal 318 that will form outside terminal with projection electrode 334, with projection electrode 334 semiconductor device 310A is joined on the assembling substrate 332 by this assembling again.

So, become and adopt the way that with projection electrode 334 semiconductor device 310A is joined to the structure on the assembling substrate 332 by assembling, just can similarly assemble semiconductor device 310A with BGA (Ball GridArray), just can improve assembling and deal with multi-pipe pin.

In addition, because outstanding terminal 318 is formed on the battery lead plate 314A, be conditional so strengthen its volume, but assembling can at random be set with the volume of projection electrode 334.Therefore, employing makes in 334 scopes that are not short-circuited of projection electrode assembling become the way of maximum with the volume of projection electrode 334 in adjacent assembling, just can increase the engaging force between semiconductor device 310A and the assembling substrate 332, thereby can improve the reliability of assembling.Originally close the assembling structure of example for the semiconductor device 310A of other embodiment, 310B, 310D also can use.

Figure 131 shows the assembling structure of the semiconductor device of embodiment 57.

The assembling structure of the present embodiment is the assembling structure as an example of the semiconductor device 310B of embodiment 55 example, it is characterized in that: with mounting structure 338 semiconductor device 310B is joined on the assembling substrate 332.

Mounting structure 338 is made of connecting contact pin 340 and align member 342.Connect pin 340 and consisted of by for example flexible conductive metal material (for example, the spring material of conductivity being arranged), be provided on the position corresponding with the position of working as external connection terminals of battery lead plate 314A.In addition, align member 342 is formed by the material with flexible and insulating properties of silica gel etc., plays a part to make connecting contact pin 340 to be positioned on the above-mentioned assigned position.

Become the mounting structure 338 of above-mentioned formation, under the state after assembling, the upper part of connecting contact pin 340 engages (for example scolding tin joint) to the battery lead plate 314A of semiconductor device 310B, and the end portion of connecting contact pin 340 then joins on the assembled base half 332.

Therefore, in the assembling structure of the present embodiment, will become as having the formation of connecting contact pin between external connection terminals and the assembling substrate.Connecting contact pin 340 is owing to being flexible formation as mentioned above, even if so such as when heating etc. semiconductor device 310B with assemble the stress that thermal expansion difference has occured between the substrate 332 to result from, this stress also can be absorbed by means of making connecting contact pin 340 flexibles.In addition, in the situation of the contact pin of non-flexible, then can absorb stress with align member 342.

Therefore, also can positively keep the engagement state between semiconductor device 310B and the assembling substrate 322 even if added above-mentioned stress, can improve the reliability of assembling.At this moment, keep the align member 342 of connecting contact pin 340 also to have flexibility owing to having become to make, so, need not stop the flexibility of connecting contact pin 340, just can positively carry out the absorption of stress.

Also have, because connecting contact pin 340 has been reserved the position by align member 342, so when assembling, need not carry out each connecting contact pin 340 and semiconductor device 310B (battery lead plate 314A), or the localization process between each connecting contact pin 340 and the assembling substrate 332, can make the assembling work facilitation.In addition, the structure of the present embodiment is for the semiconductor device 310A of other embodiment, and 310B, 310D also can use.

Figure 132 shows the assembling structure of the semiconductor device of embodiment 58.

The assembling structure of the present embodiment, what enumerate is structure as an example of the semiconductor device 310C of embodiment 56 example, it is characterized in that: with socket 344 semiconductor device 310C is assembled on the assembling substrate 332.The formation of socket 344 is to have the lead portion 348 that is configured such that the installing part 346 that will install semiconductor device 310C and the sidepiece terminal 320 that has exposed in the side of sealing resin 316C couple together.Then, semiconductor device 310C is attached on the installing part 346, after the sidepiece terminal 320 to the top of lead portion 348 and semiconductor device 310C is electrically connected, the lower bond of lead portion 348 (for example scolding tin joint) to assembling substrate 332.So, by socket 344 semiconductor device 310C is assembled on the assembling substrate 332.

So, employing becomes the way that semiconductor device 310C is assembled to the formation on the assembling substrate 332 with socket 344, because semiconductor device 310C is to the loading and unloading of assembling substrate 332, only semiconductor device 310C is loaded and unloaded to socket 344 and get final product, so can be in order to carry out the loading and unloading of semiconductor device 310C.For this reason, even if in the situation that such as maintenance etc. needs exchange semiconductor device 310C, also can easily exchange processing.

In addition, the formation of being located at the lead portion 348 on the socket 344 is: set the sidepiece of installing part 346, the sidepiece terminal 320 of semiconductor device 310C then has been exposed on the side of sealing resin 316C.Therefore, under the state that semiconductor device 310C is attached on the installing part 346, because lead portion 348 and sidepiece terminal 320 are in opposite directions, just can carry out connection between lead portion 348 and the semiconductor device 310C so lead-in wire 348 is detoured, thereby can simplify the structure of socket 344.

Figure 133 shows the assembling structure of the semiconductor device of embodiment 59.

The assembling structure of the present embodiment is identical with the assembling structure of above-described embodiment 58, also is with lead portion 350 semiconductor device 310C to be assembled on the assembling substrate 332.But feature is: replaced installing part 346 with chip mounting table (Die Stage) 352.

The socket 351 of the present embodiment is made of the lead portion 350 that forms with blaster fuse frame material integraty ground and chip mounting table 352.Chip mounting table 352 is parts of installing semiconductor device 310C, is formed with a plurality of lead portion 350 in its periphery.Constituting of this lead portion 350: the part of itself and semiconductor device 310C part is in opposite directions bent towards the top, right angle, is electrically connected with sidepiece terminal 320.

Use the socket 351 of having made above-mentioned structure even if adopt, also can the loading and unloading of easily carrying out semiconductor device 310C the same as the assembling structure of embodiment 58.In addition, are formations of integraty owing to consisting of lead portion 350 and the chip mounting table 352 of socket 351, so when can reducing the components and parts number, also so that can easily make socket.

Then, semiconductor device 310E as embodiment 58 is described.

Figure 135 is the profile as the semiconductor device 310E of embodiment 58.The semiconductor device 310E of the present embodiment, the semiconductor device 310A for above-described embodiment 54 is characterized in that: be provided with heating panel (radiating component) 356 thereon on the surface.

Heating panel 356 has been selected the good and lightweight material of thermal conductivity such as aluminium etc.This heating panel 356 bonds on semiconductor device 312 and the sealing resin 316A with the high bonding agent of thermal conductivity.So, adopt the locational way that heating panel 356 is set the close semiconductor device 312 of sealing resin 316A, just can dissipate with good efficient the heat that in semiconductor device 312, is occured.Particularly in the present embodiment, the back side 328 of semiconductor device 312 has become the formation of exposing from sealing resin 316A, and the constituting of heating panel 356 directly bonds to this and revealed on the back side 328 out.Therefore, between heating panel 356 and semiconductor device 312, there is not the bad sealing resin 316A of thermal conductivity, better consists of so can become heat dissipation characteristics.

Then, the manufacture method (manufacture method of embodiment 56) of the semiconductor device 310E that becomes above-mentioned formation described.

Figure 136～Figure 141 is the key diagram of the manufacture method of semiconductor device 310E.In addition, in Figure 136～Figure 141, only give same label and omit its explanation for the formation corresponding with the formation shown in Figure 119～Figure 122 used in the manufacture method of embodiment 54.

The manufacture method of the present embodiment is characterized in that for the manufacture method of embodiment 54: at least before implementing the chip carrying operation, implement installation procedure on the heating panel 356 is located and be installed to semiconductor device 312.

In addition, battery lead plate forms operation, the chip carrying operation, and outstanding terminal forms operation, and sealing resin forms operation and cuts off operation and basically carry out the processing same with embodiment 54.

Figure 136 adopt to implement the local expanded view that battery lead plate forms the lead frame 324A that operation forms, and the zone that with dashed lines surrounds among the figure is the zone corresponding with semiconductor device 310E (below, this zone is called engaging zones 358).

Figure 137 is the key diagram of chip installation procedure.In the chip installation procedure, form first the heating panel 356 that has identical area with above-mentioned engaging zones 358, again in these heating panel 356 tops semiconductor device 312 (312A～312C) locate and join on the position corresponding with the equipping position that sets to battery lead plate 314A.So, each semiconductor device 312 (312A～312C) just is fixed on the equipping position that sets on the battery lead plate 314A, and, can process 3 semiconductor device 312A～312C together.In the example of Figure 137, each heating panel 356 is separated into the size corresponding with engaging zones 358, be made formation separately, but also can be shown in Figure 138, with joining part 360 heating panel 360 are connect for the formation position with each engaging zones 358 of lead frame 324A and to be mapped.

After above-mentioned chip installation procedure finishes, then implement chip carrying operation and outstanding terminal and form operation.Figure 139 and Figure 140 show the lead frame 324A of the state after chip carrying operation and the end of outstanding terminal formation operation.Figure 139 enlarges to show heating panel 356 is installed to part on the lead frame 324A, and Figure 140 shows then that it is all.

In the chip carrying operation, adopt that (heating panel 356 of 312A～312C) sets the way on the lead frame 324A, the semiconductor device 312 (lift-launch of the 312A～312C) processing that is electrically connected to the battery lead plate 314A installing semiconductor device 312.As mentioned above, in the present embodiment, before implementing the chip carrying operation, implemented semiconductor device 312 (the chip installation procedure of the location and installation of 312A～312C) to the heating panel 356.Therefore in the chip carrying operation, adopt the way of heating panel 356 location and installation to the bonding part 358 of lead frame 324A, just can be together (lift-launch of 312A～312C) is to battery lead plate 314A a plurality of semiconductor device 312.

So, owing in the chip carrying operation, no longer needing to carry out each semiconductor device 312 (location of 312A～312C), as long as to the large heating panel 356 of shape and battery lead plate 314A (lead frame 324A) positioning instant can, so can make the localization process facilitation.

In addition, adopt to use with the joining part 360 shown in Figure 138 the be mapped way of structure of setting of a plurality of heating panels 356 and engaging zones, can locate more semiconductor device 312 together and carry on the battery lead plate 314A (lead frame 324A), make and process more facilitation, improve the manufacturing efficient of semiconductor device 310E.After above-mentioned chip carrying operation finishes, then implement sealing resin and form operation.In the sealing resin formed operation, (312A～312C) and the lead frame 324A of outstanding terminal 318 were attached in the mould and go, with compression forming method formation sealing resin 316A setting semiconductor-on-insulator device 312.At this moment, in the present embodiment, owing to become as at the state that has set heating panel 356 on each battery lead plate 314A, so can be the part of this heating panel 356 as counterdie.

Figure 141 shows the lead frame 324A that has formed sealing resin 316A.Shown in figure, because sealing resin 316A is formed at from heating panel 356 toward interior inboard, so the release property in the time of can improving the demoulding.Then, after above-mentioned sealing resin formation operation finishes, then implement to cut off operation, the position that employing represents with the A-A dotted line in Figure 141 cuts off the way of processing, forms the semiconductor device 310E shown in Figure 135.

Next, semiconductor device 310F as embodiment 59 is described.

Figure 142 is the profile as the semiconductor device 310F of embodiment 59.The semiconductor device 310F of the present embodiment, the semiconductor device 310E for the above embodiments 58 is characterized in that: the top at heating panel 356 has also set heat dissipation electrical fan 362.

Heat dissipation electrical fan 362 adopts in the way that a plurality of electric fan parts 361 are set, and makes its area of dissipation become large.In addition, heat dissipation electrical fan 362 bonds on the top of heating panel 356 with the good bonding agent of thermal conductivity.So, adopt heat dissipation electrical fan 362 is set way on the heating panel 356 of fan-shaped, just can further improve radiating efficiency, can more effective cooling semiconductor device 312.

Semiconductor device 310G～310J of embodiment 60～63 then, is described.The feature of this each semiconductor device 310G～310J is: all constitute and adopt the way that sets heating panel 356, so that the heat that occurs from semiconductor device 312 dissipates with good efficient.

Figure 143 shows the 60 semiconductor device 310G as embodiment.The formation of the semiconductor device 310G of the present embodiment is: set heating panel 356 at the semiconductor device 310B of above-described embodiment 55 (referring to Figure 123).Figure 144 shows the semiconductor device 310H as embodiment 61.The semiconductor device 310H of the present embodiment constitutes: have mounting structure used in the assembling structure of above-described embodiment 57 338 (by seeing Figure 131), and, on the top of semiconductor device 312, set heating panel 356.

In addition, Figure 145 shows the semiconductor device 310I as embodiment 62.The semiconductor device 310I of the present embodiment constitutes: set heating panel 356 at the semiconductor device 310C of the above embodiments 56 (referring to Figure 124).In addition, Figure 146 shows the semiconductor device 310J as embodiment 63.The semiconductor device 310J of the present embodiment constitutes: set heating panel 356 at the semiconductor device 310D of the above embodiments 57 (referring to Figure 125).So, adopt the way that sets respectively heating panel 356 at each semiconductor device 310G～310J, just can improve radiating efficiency.

Figure 147 is the key diagram of the semiconductor device 310K of embodiment 64, and Figure 147 (A) is the profile of semiconductor device 310K, and Figure 147 (B) is the ground plan of semiconductor device 310K.The semiconductor device 310K of the present embodiment, rough segmentation is got up, by semiconductor device body 370, inserter 372, the formations such as anisotropic conductive film 374 and external connection terminals 376.

Semiconductor device body 370 is by semiconductor device 378, the formations such as projection electrode 380 and resin bed 382.Semiconductor device 378 (semiconductor chip) is the device that has formed electronic circuit in Semiconductor substrate, has set a plurality of projection electrodes 380 on it assembles the face of a side.Projection electrode 380 be made with replica method for example set solder ball formation, play a part external connecting electrode.

Resin bed 382 (with the region representation of band point) is made of the thermosetting resin such as polyimides, epoxy resin (thermoplastic resins of PPS, PEK, PES and heat-resisting liquid crystalline resin etc.) etc., and the projection electrode that has been formed at semiconductor device 378 forms on whole of side.Therefore, be equipped on constituting of projection electrode 380 on the semiconductor device 378: although become by the state of sealing resin 382 sealings, this exposes the head portion of projection electrode 380 from sealing resin layer 382.That is, resin bed 382 has been formed on the semiconductor device 378, so that remaining head portion seals projection electrode 380.

Made the semiconductor device body 370 of above-mentioned formation, its all large young pathbreaker become for substantially with the packaging structure of the equal-sized so-called chip size of semiconductor device 378.In addition, as mentioned above, the formation of semiconductor device body 370 is: formed resin bed 382 in semiconductor device 378 tops, and these resin bed 382 remaining head portions seal to projection electrode 380.Therefore just to become be to keep fragile projection electrodes 380 with resin bed 382 to the result, thereby this resin bed 382 becomes as playing a part identical with fill area 306.

In addition, inserter 372A plays a part intermediate member that semiconductor device body 370 is connected with external connection terminals 376, is made of wiring pattern 384A and basal component 386A.In the present embodiment, feature is: utilized TAB (Tape AutomatedBonding, band carries automated bonding) band as inserter 372.So, adopt the way of TAB band as inserter 372, because in general, the TAB band can be used as the composed component of semiconductor device and supplies with at an easy rate, so can reduce the cost of semiconductor device 310K.The wiring pattern 384A that consists of inserter 372A has been made the formation of copper being carried out printed wiring.Basal component 386 for example is made of the insulative resin of polyimides system, be formed at semiconductor device body 370 on position corresponding to the formation position of projection electrode 380 on be formed through hole 388.

In addition, anisotropic conductive film 374 is the films of having sneaked into the conductivity filler in the flexible resin with cementability.Therefore anisotropic conductive film 374 has cementability and simultaneously to the conductivity of press direction.This anisotropic conductive film 374 as shown in the figure, is present between semiconductor device body 370 and the inserter 372A.

So semiconductor device body 370 and inserter 372A carry out bonding by means of the cementability that anisotropic conductive film 374 has.In addition, carrying out this when bonding, because semiconductor device body 370 is by towards inserter 372A pushing, so semiconductor device body 370 and inserter 372A are electrically connected by means of anisotropic conductive film 374.

In addition, external connection terminals 376 is made of solder ball, and links to each other with wiring pattern 384 by the hole 388 that is formed on the basal component 336A.This external connection terminals 376 is equipped on the face of a side opposite with the lift-launch face of semiconductor device body 370, so that do not hinder the lift-launch of semiconductor device body 370.

Also have, the semiconductor device 310K of the present embodiment constitutes: make the step pitch that sets that sets step pitch and set the external connection terminals 376 on the inserter 372A of the projection electrode 380 that is formed on the semiconductor device body 370 become same step pitch.The area of area when meanwhile, also becoming the top view that makes anisotropic conductive film 374 and inserter 372A during with the top view of semiconductor device body 370 equates substantially.

As mentioned above, adopt setting step pitch and having set the way that step pitch becomes same step pitch that sets of external connection terminals 376 on the inserter 372A of the projection electrode 380 be formed on the semiconductor device body 370, just can reduce the shape of anisotropic conductive film 374 and inserter 372A, just can make semiconductor device 310K miniaturization.Yet, owing to above-mentioned constituting of inserter 372A is formed on the basal component 386A, so can form arbitrarily figure in this basal component 386A top.That is, on basal component 386A, can carry out the cabling of wiring pattern 384A.

Employing resembles the way of carrying out in this wise the cabling of wiring pattern 384 in basal component 386A top, just can with the formation location independent ground that is arranged at the projection electrode 380 on the semiconductor device body 370 set external connection terminals 376 equipping position.Therefore, when setting the terminal layout of external connection terminals 376, owing to can improve its degree of freedom, can make the design of semiconductor device body 370 and the wires design facilitation that will assemble the assembling substrate of semiconductor device 310K.

In addition, as mentioned above, owing to anisotropic conductive film 374 has cementability and for press direction conductivity is arranged, so can semiconductor device body 370 be engaged with inserter 372A with this anisotropic conductive film 374.At this moment, the cementability that has with anisotropic conductive film 374 makes semiconductor device body 370 mechanically engage with inserter 372A, uses the anisotropic conductive that has to make semiconductor device body 370 and inserter 372A carry out electricity and engages (connection).

So, so because anisotropic conductive film 374 has cementability and these both sides' of conductivity characteristic and the constituent ratio of carrying out each function with different members, can reduce the components and parts number and reduce assembling number in man-hour.

Also have, because anisotropic conductive film 374 has flexibility, and, be present between semiconductor device body 370 and inserter 372A, so can make this anisotropic conductive film 374 play buffer film.Therefore, the stress that occurs between semiconductor device body 370 and the inserter 72A (such as thermal stress etc.) can relax with anisotropic conductive film 374, can improve the reliability of semiconductor device 310K.

The manufacture method of semiconductor device 310K then, is described.

Figure 148 shows the manufacture method (manufacture method of embodiment 57) of semiconductor device 310K.As shown in the figure, want to make semiconductor device 310K, form first semiconductor device body 370, anisotropic conductive film 374, and inserter 72A.Then, as shown in the figure, after the location of having carried out semiconductor device body 370 and inserter 72A, anisotropy conducting film 374 is installed between semiconductor device body 370 and the inserter 372A, towards inserter 372A pushing semiconductor device body 370.

So as mentioned above, the cementability that anisotropic conductive film 374 has makes semiconductor device body 370 mechanically engage with inserter 72A, use the anisotropic conductive that has to make semiconductor device body 370 and inserter 372A carry out electricity and engage.Therefore, if adopt the manufacture method of the present embodiment, owing to mechanicalness joining process and the electrical engagement that can carry out together between semiconductor device body 370 and the inserter 72A are processed, so can simplify the manufacturing process of semiconductor device 310K.

As mentioned above, after the joining process between semiconductor device body 370 and the inserter 372A finished, then by copying joined the external connection terminals 376 that is made of solder ball on the inserter 372A to.At this moment, owing to being replicated in the heating atmosphere of external connection terminals 376 carried out, so in the laggard hand-hole 388 of external connection terminals 376 meltings, the wiring pattern 384A with inserter 372A is electrically connected again.

At this moment, as mentioned above, owing to external connection terminals 376 will enter in the hole 388 that has been formed on the inserter 372A, so the engaging force grow between external connection terminals 376 and the inserter 372A.Therefore, can prevent that external connection terminals 376 from from inserter 372A disengagement, can improve the reliability of semiconductor device 310K.

Then explanation is as the semiconductor device 310L of embodiment 65.

Figure 149 enlarges the key position of the semiconductor device 310L that shows embodiment 65.In Figure 149, only give same label and omit its explanation for the formation corresponding with the formation of the semiconductor device 310K of the embodiment 64 that had illustrated with Figure 147.The feature of the semiconductor device 310L of the present embodiment is: the insulating component 394 of the thickness with regulation is set inserter 372A top.This insulating component 394 is insulating resins of polyimides system for example, has been formed with connecting hole 396 on the position corresponding with the formation position of the projection electrode 380 that is set to.

If adopt the semiconductor device 310L that has made above-mentioned formation, when being attached to semiconductor device body 370 among the inserter 372A, during towards inserter 372A pushing semiconductor device body 370, by means of this pushing force, anisotropic conductive film 374 distortion and elastic force has been arranged.At this moment, particularly in the formation position of connecting hole 396, anisotropic conductive film 374 attempts enter in the narrow connecting hole 396, and therefore, the interior pressure in the connecting hole 396 will uprise.

So and since the pressure concentration of the anisotropic conductive film 374 in the connecting hole 396 uprise, also will uprise so be blended into the density of the conductivity filler in the anisotropic conductive film 374.Therefore, the conductance in the connecting hole 396 of anisotropic conductive film 374 is improved, thereby can positively carry out being electrically connected between semiconductor device body 370 and the inserter 372A.

Figure 150 and Figure 151 show the manufacture method (manufacture method of embodiment 58) of semiconductor device 310L.In Figure 150 and Figure 151, for only give same label for formation corresponding to the formation shown in used Figure 148 of manufacture method of explanation embodiment 57 and omit its explanation.In addition, in following manufacture method, the method for processing a plurality of semiconductor device 310L is described

Make semiconductor device 310L and will make first with other operation in advance and formed a plurality of semiconductor device bodies 370, the TAB of anisotropic conductive film 374 and inserter 272A is with 392.

Be with when 392 forming this TAB, thereon (will install the face of big circular slice 390) on surface with semiconductor device body 370 position in opposite directions on form insulating component 394.This insulating component 394, for example can utilizing, the formation technology of photoresist forms.In addition, when forming this insulating component 394, on position corresponding to the formation position of projection electrode 380, to form first connecting hole 396.

Then, shown in Figure 150, behind the location of having carried out projection electrode 380 and connecting hole 396, anisotropic conductive film 374 is installed in big circular slice 390 and TAB is with between 392, and is with 392 pushing big circular slices 390 towards TAB.

By means of this, the cementability that has with anisotropic conductive film 374 makes semiconductor device body 370 mechanically engage with inserter 372A, uses the anisotropic conductive that has to make semiconductor device body 370 and inserter 372A carry out electricity and engages.At this moment, as mentioned above owing to improving in the conductivity of connecting hole 396 interior anisotropic conductive film 374, thus can be certain carry out being electrically connected between projection electrode 380 and the wiring pattern 384.

State after Figure 151 shows big circular slice 390 and TAB engages with 392.When resemble big circular slice 390 and TAB are finished with 392 joining process after, then, the dotted line position place that represents with A-A in Figure 151 cuts off processing.So, form each semiconductor device 370 and inserter 372A, form the semiconductor device 310L shown in Figure 149.

Therefore, if adopt the manufacture method of the present embodiment, owing to the mechanical engagement that can carry out together between semiconductor device body 370 and the inserter 372A is processed and the electrical engagement processing, so can simplify the manufacturing process of semiconductor device 310L.In addition, owing to can carry out in the present embodiment so-called a plurality of simultaneously processing, so can improve the manufacturing efficient of semiconductor device 310L.

Have again, in general in having used the structure that is electrically connected of anisotropic conductive film 374, exist the problem of the rate of finished products reduction that is electrically connected, but in the present embodiment, employing can positively be carried out being electrically connected between projection electrode 380 and the wiring pattern 384 setting the way of the insulating component 394 that has formed connecting hole 396 with semiconductor device body 370 (insulation projection electrode 380) position in opposite directions.Therefore, can improve the reliability of semiconductor device 310L.

Then, semiconductor device 310M as embodiment 66 is described.

Figure 152 shows the semiconductor device 310M of embodiment 66, and what Figure 152 (A) illustrated is the section of semiconductor device 310M, and what Figure 152 (B) illustrated is the bottom surface of semiconductor device 310M.In Figure 152, only give same label and omit its explanation for the formation corresponding with the formation of the semiconductor device 310K of the embodiment 64 that illustrated with Figure 147.

In the semiconductor device 310K of the above embodiments 64, in order to seek miniaturization, it constitutes: make the step pitch that sets that sets step pitch and set the external connection terminals 376 on the inserter 372A of the projection electrode 380 that is formed on the semiconductor device body 370 become same step pitch.

To this, in the semiconductor device 310M of the present embodiment, feature is: with respect to the step pitch that sets that is formed on projection electrode 380 on the semiconductor device body 370, set the step pitch that sets that sets the external connection terminals 376 on the inserter 372B greatly.Meanwhile, the area of inserter 372B has broadened with respect to semiconductor device body 370.

So, adopt external connection terminals 376 set step pitch set than projection electrode 380 set the large way of step pitch, can further improve the degree of freedom of cabling of the wiring pattern 384B of inserter 372B top.Specifically, shown in Figure 152 (B), the formation position of the connecting hole 396 that sets projection electrode 380 and the equipping position of external connection terminals 376 are left, connect this connecting hole 396 and external connection terminals 376 with wiring pattern 384B.

Therefore, the degree of freedom of the terminal layout of external connection terminals 376 can be improved, the terminal design facilitation can be made.In addition, even if make narrow pitch step pitch between the electrode of projection electrode 380 owing to the densification of semiconductor device body 370, owing to can make projection electrode 380 different from the equipping position of external connection terminals 376, so also can easily deal with above-mentioned narrow step pitch.

Figure 153 shows the manufacture method (manufacture method of embodiment 59) of above-mentioned semiconductor device 310M.In the figure, what illustrate is not a plurality of simultaneously treated methods, but forms singly the method for semiconductor device 310M.

In the manufacture method of the semiconductor device 310M of the present embodiment, formed semiconductor device body 370 with other operation in advance, anisotropic conductive film 374 and inserter 372B.Then, behind the location of having carried out projection electrode 380 and connecting hole 396, anisotropic conductive film 374 is installed between semiconductor device body 370 and the inserter 372B and towards inserter 372B pushing semiconductor device body 370.

By means of this, the cementability that has with anisotropic conductive film 374 makes semiconductor device body 370 mechanically engage with inserter 372B, uses the anisotropic conductive that has to make semiconductor device body 370 carry out electricity with inserter 372 and engages.By means of this, form the semiconductor device 310M that is shown in Figure 152.

Therefore, even if with the manufacture method of the present embodiment, because the mechanical engagement that can carry out together between semiconductor device body 370 and the inserter 372B processes and the electrical engagement processing, so can simplify the manufacturing process of semiconductor device 310M.

Then, semiconductor device 310N as embodiment 67 is described.

The profile of Figure 154 has illustrated the semiconductor device 310N as embodiment 67.In Figure 154, the formation corresponding with the formation of the semiconductor device 310K of the embodiment 64 that had illustrated with Figure 147 only given same label and omitted its explanation.The formation of the semiconductor device 310K of above-described embodiment 64 is: used the capable film 374 of anisotropic conductive in the engaging between semiconductor device body 370 and inserter 372A, become make semiconductor device body 370 with inserter 372A carry out electric property and mechanicalness engages.

To this, the feature of the semiconductor device 310N in the present embodiment is: bonding agent 398 and conductive paste 3100 (electroconductive member) are set replace the capable film 374 of anisotropic conductive.

Bonding agent 398 is insulating resins of polyimides system for example, even if selected the material that also has the flexibility of regulation after sclerosis.This bonding agent 398 is present between semiconductor device body 370 and the inserter 372A, plays a part to make semiconductor device body 370 and inserter 372A to be adhesively fixed.In addition, on the position corresponding with the formation position of projection electrode 380 of bonding agent 398, formed through hole 3120.

Therefore on the other hand, the cementability that conductivity high 3100 has regulation constitutes also and will enter within the above-mentioned through hole 3120.

This conductive paste 3100 adopts the way that is present in the through hole 3100, plays a part to make semiconductor device body 370 and inserter 372A to be electrically connected.Specifically, with conductive paste 3100 projection electrode 380 and wiring pattern 384A are electrically connected, by means of this, semiconductor device body 370 and inserter 372A are electrically connected.

As mentioned above, in the semiconductor device 310N of the present embodiment, bonding agent 398 makes semiconductor device body 370 and inserter 372A carry out mechanicalness and engages, and conductive paste 3100 then makes semiconductor device body 370 and inserter 372A carry out electric property joint (connection).So, adopt different member (bonding agents 398, conductive paste 3100) carries out that the mechanicalness of carrying out engages and the way of electric property joint when semiconductor device body 370 is engaged with inserter 372A, just can select the best member of each function (mechanicalness engages, electric property joint).Therefore, just can positively carry out simultaneously semiconductor device body 370 and engage and electric property joint with mechanicalness between the inserter 372A, can improve the reliability of semiconductor device 310N.

Also have, even if because bonding agent 398 also has the flexibility of regulation after sclerosis, and, be present between semiconductor device body 370 and the inserter 372A, so this bonding agent 398 also plays a part buffer film.Therefore, can relax the stress that between semiconductor device body 370 and inserter 372A, occurs by means of bonding agent 398.In addition and since the semiconductor device 310N of the present embodiment constitute projection electrode 380 set step pitch and external connection terminals 376 set step pitch be set as equal, so can make semiconductor device 310N miniaturization.

Figure 155～Figure 157 shows the manufacture method (manufacture method of embodiment 60) of semiconductor device 310N.In Figure 155～Figure 157, only give same label and omit its explanation for the formation corresponding with used Figure 150 of manufacture method of explanation embodiment 58 and the formation shown in Figure 151.In addition, in the following description, the method for processing simultaneously a plurality of semiconductor device 310N is described.

For will making this semiconductor device 310N, in other operation, form in advance the big circular slice 390 that has been formed with a plurality of semiconductor device bodies 370, bonding agent 398 and the TAB that has formed a plurality of inserter 372B are with 392.

When forming this semiconductor device body 370, having formed on a plurality of projection electrode 380, coated respectively conductive paste 3100.In addition, on the position corresponding with the formation position of projection electrode 380 of bonding agent 398, worn in advance through hole 3120.In addition, be with 392 o'clock forming TAB, thereon the surface (face of installing big circular slice 390) with positions semiconductor device body 370 phases on form insulating component.

This insulating component 394 can for example utilize the formation technology of photoresist to form.In addition, when forming this insulating component 394, to form connecting hole 396 in the position corresponding with the formation position of projection electrode 380 first.

Then, behind the location of having carried out projection electrode 380 and connecting hole 396, bonding agent 398 is installed in big circular slice 390 and TAB is with between 392, big circular slice 390 is bonded to TAB to be with on 392, like this, make with bonding agent 398 big circular slice 390 and TAB be with 392 carry out mechanicalness bonding in, conductive paste 3100 is entered in through hole 3102 and the connecting hole 396, big circular slice 390 and wiring pattern 384A are electrically connected.State after Figure 156 shows big circular slice 390 and TAB engages with 392.

So, after big circular slice 390 and TAB finished with 392 joining process, the position that then represents with A-A in Figure 156 cut off processing.So, just can form semiconductor device body 370 and inserter 372B, can form the semiconductor device 310N (the semiconductor device 310N that is shown in Figure 154 shows the formation that insulating component 394 is not set) that is shown in Figure 154.

In above-mentioned manufacture method, although be the method for processing simultaneously a plurality of semiconductor device 310N, but shown in Figure 157, also can make singly semiconductor device 310N.

The semiconductor device 310P of embodiment 168 then, is described.

The profile of Figure 158 has illustrated the semiconductor device 310P of embodiment 68.In Figure 158, for the formation of the formation correspondence of the semiconductor device 310N of the embodiment 67 that had illustrated with Figure 154, only give same label and omit its explanation.

In the semiconductor device 310N of the above embodiments 67, in order to seek miniaturization, having constituted the configuration that makes the projection electrode 380 that is formed on the semiconductor device body 370, to establish step pitch be same step pitch with the step pitch that sets that has set the external connection terminals 376 on the inserter 372A.

To this, the semiconductor device 310P of the present embodiment establishes step pitch for the configuration that is formed on the projection electrode 380 on the semiconductor device body 370, it is characterized in that: set the step pitch that sets that sets the external connection terminals 376 on the inserter 372A greatly.Corresponding therewith, the area of inserter 372B broadens for the area of semiconductor device body 370.

So, adopt and establish step pitch for the configuration of projection electrode 380, make the way that step pitch is set greatly that sets of external connection terminals 376, just can further improve the degree of freedom of the cabling of the wiring pattern 374B on the inserter 372B.So, can improve the degree of freedom of the terminal layout of external connection terminals 376, when making the terminal design facilitation, even if the step pitch of 380 of projection electrodes stricturization also can easily deal with it.

Figure 159 shows the manufacture method (manufacture method of embodiment 61) of above-mentioned semiconductor device 310P.In the figure, what illustrate for example is not the method for carrying out simultaneously a plurality of processing, but forms the method for semiconductor device 310P one by one.

In the manufacture method of the semiconductor device 310P of the present embodiment, also be in other operation, to have formed first in advance semiconductor device body 370, bonding agent 398 and inserter 372B.When forming semiconductor device body 370, coated first respectively conductive paste 3100 on a plurality of projection electrode 380 forming.On the position corresponding with the formation position of projection electrode 380 of bonding agent 398, put in advance through hole 3102.In addition, on the position corresponding with the formation position of projection electrode 380 of insulating component 394, also formed connecting hole 396.

Then, behind the location of having carried out projection electrode 380 and connecting hole 396, bonding agent 398 is installed between big circular slice 390 and the inserter 372B, big circular slice 390 is bonded on the inserter 372B, like this, make with bonding agent 398 big circular slice 390 and inserter 372B carry out mechanicalness bonding in, conductive paste 3100 is entered in through hole 3102 and the connecting hole 396, big circular slice 390 and wiring pattern 384A are electrically connected.Adopt the way of implementing above processing, form the semiconductor device 310P that is shown in Figure 158.

Then, semiconductor device 310Q as embodiment 69 is described.

The profile of Figure 160 has illustrated the semiconductor device 310Q of embodiment 69.In Figure 160, for the formation of the formation correspondence of the semiconductor device 310N of the embodiment 67 that had illustrated with Figure 154, only give same label and omit its explanation.

The semiconductor device 310N of the above embodiments 67, what use as electroconductive member is conductive paste 3100, and become the formation that makes semiconductor device body 370 and inserter 372A electrical engagement (connection) with this conductive paste 3100, to this, the feature of the semiconductor device 310Q of the present embodiment is: column projection electrode 3104 (electroconductive member) is set replaces conductive paste 3100.

Column projection electrode 3104 is set on the assigned position on the wiring pattern 384A that is formed on the inserter 372A (position corresponding with projection electrode 380).In addition, these column projection electrode 3104 usefulness wire bonds technology form.Particularly, use the wire bonds device, at first the head portion at the spun gold that extends out from cavity forms gold goal, then, this gold goal is pressed on the afore mentioned rules position of wiring pattern 384A.

Then, make capillary carry out ultrasonic vibration the gold goal ultrasonic welding to wiring pattern 384A.Then, after clamping spun gold, make the up moving spun gold that cuts off of capillary.By means of carrying out above-mentioned processing, form column projection electrode 3104 at wiring pattern 384A.This column projection electrode 3104 is connected on the projection electrode 380 by through hole 3102, and therefore, semiconductor device body 370 and inserter 372A play a part to be electrically connected.

As mentioned above, in the semiconductor device 310Q of the present embodiment, bonding agent 398 mechanicalness bond semiconductor device body 370 and inserter 372A, column projection electrode 3104 electrical engagement (connection) semiconductor device body 370 and inserter 372A.Employing resembles and uses in this wise different members (bonding agent 398, column projection electrode 3104) carries out that mechanicalness engages and the way of electric property combination, mechanicalness of carrying out between semiconductor device body 370 and the inserter 372A that can be certain engages and the combination of electric property, can improve the reliability of semiconductor device 310Q.

In addition, because under connection status, column projection electrode 3104 connects being highlighted under the state that electrode 380 eats into, so can positively carry out being electrically connected between column projection electrode 3104 and the projection electrode 380.Also have, because constituting of the semiconductor device 310Q in the present embodiment is that the step pitch that sets that sets step pitch and external connection terminals 376 of projection electrode 380 is set as and equates, so can make semiconductor device 310Q miniaturization.

Figure 161～Figure 163 shows the manufacture method (manufacture method of embodiment 62) of semiconductor device 310Q.In Figure 161～Figure 163 to only give same label and omit its explanation for formation corresponding to the formation shown in the used Figure 155～Figure 157 of the manufacture method that embodiment 60 is described.In following manufacture method, the method for processing simultaneously a plurality of semiconductor device 310Q is described.

Want to make semiconductor device 310Q, will be first form the big circular slice 390 that form a plurality of semiconductor device bodies 370 with other operation, bonding agent 398 and the TAB that has formed a plurality of inserter 372B are with 392.

Be with 392 o'clock forming this TAB, thereon surface (face of installing big circular slice 390) with semiconductor device body 370 position in opposite directions on form insulating component 394.When forming insulating component 394, form connecting hole 396 in the position corresponding with the formation position of projection electrode 380, form column projection electrode 3104 in the wiring pattern 384A top of the inside of connecting hole 396 again.

Then, behind the location of having carried out projection electrode 380 and connecting hole 396, bonding agent 398 is installed between big circular slice 390 and the inserter 372B, the limit is with pushing on 392 to big circular slice 390 to TAB, and the limit is fixed.So, be with in 392 with bonding agent 398 mechanicalnesses joint big circular slice 390 and TAB, column projection electrode 3104 becomes the state of eating into for being highlighted electrode 380 by through hole 3102 and connecting hole 396, so projection electrode 380 and wiring pattern 384A just carry out electrical engagement with column projection electrode 3104.Figure 162 shows the state after big circular slice 390 and TAB engage with 392.

So, after big circular slice 390 and TAB finished with 392 joining process, then, the dotted line position place that represents with A-A in Figure 162 cut off processing.By means of this, form one by one semiconductor device body 370 and inserter 376B, form semiconductor device 310Q (the semiconductor device 310N that is shown in Figure 160 shows the formation that insulating component 394 is not set).

In above-mentioned manufacture method, although explanation is the method for processing simultaneously a plurality of semiconductor device 310Q, shown in Figure 163, also can make semiconductor device 310Q one by one.

Then, semiconductor device 310R as embodiment 70 is described.

The profile of Figure 164 has illustrated the semiconductor device 310R of embodiment 70.In Figure 164, for the formation of the formation correspondence of the semiconductor device 310Q of the embodiment 69 that had illustrated with Figure 160, only give same label and omit its explanation.

In the semiconductor device 310Q of the above embodiments 69, in order to seek miniaturization, having constituted the configuration that makes the projection electrode 380 that is formed on the semiconductor device body 370, to establish step pitch be same step pitch with the step pitch that sets that has set the external connection terminals 376 on the inserter 372A.

To this, the semiconductor device 310R of the present embodiment establishes step pitch for the configuration that is formed on the projection electrode 380 on the semiconductor device body 370, it is characterized in that: set the step pitch that sets that sets the external connection terminals 376 on the inserter 372B greatly.Corresponding therewith, the area of inserter 372B broadens for the area of semiconductor device body 370.

So, adopt and establish the way that step pitch is set greatly that sets that step pitch makes external connection terminals 376 for the configuration of projection electrode 380, just can improve the degree of freedom of the cabling of the wiring pattern 374B on the inserter 372B in one step of part.So, can improve the degree of freedom of the terminal layout of external connection terminals 376, when making the terminal design facilitation, even if the step pitch of 380 of projection electrodes stricturization also can easily deal with it.

Figure 165 shows the manufacture method (manufacture method of embodiment 63) of above-mentioned semiconductor device 310Q.In the figure, what illustrate for example is not the method for carrying out simultaneously a plurality of processing, but forms the method for semiconductor device 310Q one by one.

In the manufacture method of the semiconductor device 310Q of the present embodiment, also be in other operation, to have formed first in advance semiconductor device body 370, bonding agent 398 and inserter 372B.At this moment, on the position corresponding with the formation position of projection electrode 380 of bonding agent 398, put in advance through hole 3102.In addition, inserter 372B is upper when forming insulating component 394, also formed connecting hole 396 on the position corresponding with the formation position of projection electrode 380 of insulating component 394.Moreover, formed first column projection electrode 3104 with above-mentioned wire bonds technology on the wiring pattern 384A in being exposed to connecting hole 396.

Then, behind the location of having carried out projection electrode 380 and connecting hole 396, bonding agent 398 is installed between big circular slice 390 and the inserter 372B, the limit is with pushing on 392 to big circular slice 390 to TAB, and the limit is fixed.So, be with in 392 with bonding agent 398 mechanicalnesses joint big circular slice 390 and TAB, column projection electrode 3104 becomes the state of eating into for being highlighted electrode 380 by through hole 3102 and connecting hole 396, the way of above processing is carried out in employing, projection electrode 380 and wiring pattern 384A just carry out electrical engagement with column projection electrode 3104, so, form the semiconductor device 310R shown in Figure 164.

Then, semiconductor device 310S as embodiment 71 is described.

The profile of Figure 166 has illustrated the semiconductor device 310S of embodiment 71.In Figure 166, for the formation of the formation correspondence of the semiconductor device 310N of the embodiment 67 that had illustrated with Figure 154, only give same label and omit its explanation.

Semiconductor device 310N～310R of the embodiment 67～70 that the front was said, as electroconductive member, with be electrical cream 3100 or column projection electrode 3104, and become the formation that makes semiconductor device body 370 and inserter 372A electrical engagement (connection) with this electrical cream 3100 or column projection electrode 3104.To this, the feature of the semiconductor device 310S of the present embodiment is: setting is striden lead-in wire 3106 (electroconductive members) and is replaced above-mentioned electrical cream 3100 or column projection electrode 3104.

Stride lead-in wire 3106 and form as a wholely with being formed on wiring pattern 384C on the inserter 372C, be constituted as from the outer peripheral edge portion of inserter 372 and extend out to (towards the direction of semiconductor device body 370) toward tiltedly upper.In addition, this formation position of striding lead-in wire 3106 has been set to corresponding with the formation position of projection electrode 380.

Want to form to stride and go between 3106, will be in advance remove the basal component 386C corresponding with the forming section of striding lead-in wire 3106 of the inserter 372C that has formed with dry corrosion method etc., make it to become by means of this and be monomer, wiring pattern 337C towards above-mentioned oblique upper to being bent to form.So, stride lead-in wire 3106 in the formation of the outer peripheral edge portion position of inserter 372C.This is striden lead-in wire 3106 equipping positions of walking around bonding agent 398 and is connected on the projection electrode 380, therefore, plays a part to make semiconductor device body 370 and inserter 372A to be electrically connected.In addition, projection electrode 380 and to stride the link position of lead-in wire between 3106 resin-sealed with protective layer (cover).Like this, just can prevent from striding lead deformation because adding that external force etc. makes, can improve the reliability of semiconductor device 310S.

As mentioned above, in the semiconductor device 310S of the present embodiment, bonding agent 398 mechanicalness bond semiconductor device body 370 and inserter 372A, column projection electrode 3104 electrical engagement (connection) semiconductor device body 370 and inserter 372A.Employing resembles and uses in this wise different members (bonding agent 398, column projection electrode 3104) carries out that mechanicalness engages and the way of electric property combination, mechanicalness of carrying out between semiconductor device body 370 and the inserter 372A that can be certain engages and the combination of electric property, can improve the reliability of semiconductor device 310S.

In addition owing to not having the bonding agent 398 of insulating properties striding between lead-in wire 3106 and the projection electrode 380, so can improve stride go between 3106 and projection electrode 380 between the reliability that is electrically connected.Have again, have elasticity owing to striding lead-in wire 3106, therefore when connecting, stride lead-in wire 3106 and be crimped onto on the projection electrode 380 with having elastic force.Therefore, even if with this way also can improve stride the lead-in wire 3106 and projection electrode 380 between the reliability that is electrically connected.

Figure 167～Figure 171 shows the manufacture method (manufacture method of embodiment 64) of semiconductor device 310S.In Figure 167～Figure 171 to only give same label and omit its explanation for formation corresponding to the formation shown in the used Figure 155～Figure 157 of the manufacture method that embodiment 60 is described.In following manufacture method, the method for processing simultaneously a plurality of semiconductor device 310S is described.

Want to make semiconductor device 310S, shown in Figure 167, in other operation, form first in advance the big circular slice 390 that has formed a plurality of semiconductor device bodies 370, bonding agent 398 and inserter 372C.In addition, when forming this inserter 372C, form with above-mentioned formation method first and stride lead-in wire 3106.

Then, after having carried out projection electrode 380 and the location of striding lead-in wire 3106, bonding agent 398 is installed between big circular slice 390 and the inserter 372C, the limit pushes the limit to each inserter 372C on the big circular slice 390 and is fixed.So shown in Figure 168, big circular slice 390 and inserter 372C just are joined together with bonding agent 398.In addition, stride lead-in wire 3106, adopt the way be pressed on the projection electrode 380, use the elastic force that produces to be crimped onto on the projection electrode 380, thereby, projection electrode 380 and stride lead-in wire 3106 and can positively be electrically connected.

As mentioned above; when big circular slice 390 and inserter 372C mechanicalness are engaged; and projection electrode 380 and striding after lead-in wire 3106 is electrically connected, then at least comprise projection electrode 380 with the big circular slice 390 of striding the link position between the lead-in wire 3106 and inserter 372C between formation protective layer resin 3108.This protective layer resin 3108 both can constitute with potting (potting) method and form, and also can form with the moldings formed therefrom method.

So, after the formation processing of protection resin bed 3108 finished, the position that then represents with A-A in Figure 169 cut off processing.So, can form the semiconductor device 310S that is shown in Figure 154.In above-mentioned manufacture method, although be the method for processing simultaneously a plurality of semiconductor device 310S, but shown in Figure 171 and Figure 173, also can make singly semiconductor device 310S.

Then, semiconductor device 310T as embodiment 72 is described.

The profile of Figure 172 (A) has illustrated the semiconductor device 310T as embodiment 72.In Figure 172, for the formation of the formation correspondence of the semiconductor device 310N of the embodiment 67 that had illustrated with Figure 154, only give same label and omit its explanation.Semiconductor device 310N～310S of the embodiment 67～71 that the front was said, as electroconductive member, with be electrical cream 3100 or column projection electrode 3104 or stride the lead-in wire 3106, and become with this electrical cream 3100 or column projection electrode 3104 or or stride lead-in wire 3106 and make semiconductor device body 370 and inserter 372A, the formation of 372B electrical engagement (connection).

To this, the feature of the semiconductor device 310T of the present embodiment is to become following formation: as electroconductive member connecting contact pin 3110 and align member 3112 are assembled on the inserter 327D, replace above-mentioned conductive paste 3100 or column projection electrode 3104.

The inserter 372D of the present embodiment, rough segmentation is got up, by connecting contact pin 3110, align member 3112, bonding agent 3114, basal component 3116 formations such as grade.Connecting contact pin 3110 is equipped on the position corresponding with the formation position of projection electrode 380, under the state of having assembled, when making its upper part join on the projection electrode 380, end portion is joined on the projection electrode 380.In addition, align member 3112 has the locational effect of formation that this connecting contact pin 3110 is positioned projection electrode 380, is formed by the flexible material of silicon rubber etc.

As mentioned above, keep the align member 3112 of connecting contact pin 3110, be adhesively fixed on the basal component 3116 by bonding agent 3114.At this moment, with the position in opposite directions, formation position of the projection electrode 380 of basal component 3116 on formed hole 388, connecting contact pin 3,110 2388 links to each other with external connection terminals 376 by this.Figure 172 (B) enlarges the link position that shows between connecting contact pin 3110 and the external connection terminals 376.Shown in figure, connecting contact pin 3110 with by eat into stateful connection to external connection terminals 376, thereby can positively be electrically connected.

In becoming the semiconductor device 310T of above-mentioned formation, because when being attached to the upper part of connecting contact pin 3110 on the projection electrode 380, end portion has joined on the external connection terminals 376, is present in formation between projection electrode 380 and the external connection terminals 376 so become as connecting contact pin 3110.

Because this connecting contact pin 3110 is flexible formations, even if such as when the heating etc. between semiconductor device body 370 and inserter 37D2 so that stress to have occured because of the thermal expansion rate variance, this stress also can be absorbed because this connecting contact pin 3110 has flexibility.Therefore, even if added stress, also can positively keep being connected between external connection terminals 376 and the projection electrode 380.

In addition, connecting contact pin 3110 is positioned and the forming on position corresponding to position of projection electrode 380 by align member.Therefore, when assembling, the localization process between each connecting contact pin 3110 and projection electrode 380 or the external connection terminals 376 need not be carried out again, assembling work can be easily carried out.

Have again, because align member is formed by flexible member, as mentioned above, even if connecting contact pin 3110 flexibles, align member 3112 also can followed its flexible, so also can be absorbed in the stress that occurs between semiconductor device body 370 and the inserter 37D2 with align member 3112.

Figure 173～Figure 175 shows the manufacture method (manufacture method of embodiment 65) of semiconductor device 310T.In Figure 173～Figure 175 to only give same label and omit its explanation for formation corresponding to the formation shown in the used Figure 155～Figure 157 of the manufacture method that embodiment 60 is described.In following manufacture method, the method for processing simultaneously a plurality of semiconductor device 310T is described.

Want to make semiconductor device 310T, shown in Figure 173, in other operation, form first in advance the big circular slice 390 that has formed a plurality of semiconductor device bodies 370, keep align member 3112, bonding agent 3114 and the basal component 3116 of connecting contact pin 3110.On the position corresponding with the formation position of projection electrode 380 of bonding agent 3114 and basal component 3116, hole 388 and through hole 3102 have been formed first.

Then, carrying out after projection electrode 380 and location insert 3110 the location of shaking, the limit heating edge pushes big circular slice 390 to inserter 372D (connecting contact pin 3110, align member 3112, bonding agent 3114, basal component 3116).By means of this, shown in Figure 174, connect to insert 3110 the upper part of shaking and be embedded in the projection electrode 380, and end portion is embedded in the external connection terminals 376.Therefore, projection electrode 380 and external connection terminals 376 just are electrically connected by connecting contact pin 3110.

So, after the connection processing between projection electrode 380 and the external connection terminals 376 finished, then, the dotted line position place that represents with A-A in Figure 174 cut off processing.By means of this, form the semiconductor device 310T that is shown in Figure 172 (A).In above-mentioned manufacture method, although explanation is the method for processing simultaneously a plurality of semiconductor device 310T, shown in Figure 175, also can make semiconductor device 310T one by one.

Then, semiconductor device 310U as embodiment 73 is described.

The profile of Figure 176 has illustrated the semiconductor device 310U as embodiment 73.In Figure 176, for the formation of the formation correspondence of the semiconductor device 310T of the embodiment 72 that had illustrated with Figure 172, only give same label and omit its explanation.

In the semiconductor device 310T of the above embodiments 72, in order to seek miniaturization, having constituted the configuration that makes the projection electrode 380 that is formed on the semiconductor device body 370, to establish step pitch be same step pitch with the step pitch that sets that has set the external connection terminals 376 on the inserter 372D.

To this, the semiconductor device 310U of the present embodiment establishes step pitch for the configuration that is formed on the projection electrode 380 on the semiconductor device body 370, it is characterized in that: set the step pitch that sets that sets the external connection terminals 376 on the inserter 372B greatly.Corresponding therewith, the area of inserter 372B broadens for the area of semiconductor device body 370.

So, adopt and establish the way that step pitch is set greatly that sets that step pitch makes external connection terminals 376 for the configuration of projection electrode 380, just can improve the degree of freedom of the cabling of the wiring pattern 384B on the inserter 372B in one step of part.So, can improve the degree of freedom of the terminal layout of external connection terminals 376, when making the terminal design facilitation, even if the interelectrode step pitch of projection electrode 380 (connect to insert and shakes 3110) stricturization also can easily deal with it.

Figure 177 shows the manufacture method (manufacture method of embodiment 66) of above-mentioned semiconductor device 310T.In the figure, what illustrate for example is not the method for carrying out simultaneously a plurality of processing, but forms the method for semiconductor device 310T one by one.

In the manufacture method of the semiconductor device 310T of the present embodiment, in other operation, form first in advance semiconductor device body 370, keep the align member 3112 of connecting contact pin 3110, bonding agent 3114 and inserter 372B.At this moment, on the position corresponding with the formation position of projection electrode 380 of bonding agent 3114, formed first through hole 3102.

Then, carrying out the location of projection electrode 380 with positioning insertion pin 3110, and behind the location between positioning insertion pin 3110 and the connecting hole 396, the limit heating edge pushes semiconductor device body 370 in inserter 372B.So, connect to insert 3110 the upper part of shaking and be embedded in the projection electrode 380, and end portion is embedded in the external connection terminals 376.Therefore, projection electrode 380 and external connection terminals 376 just are electrically connected by connecting contact pin 3110.The way of above processing is carried out in employing, just can form the semiconductor device 310U shown in Figure 176.

Above, embodiments of the invention have been described, but the present invention is not limited to above-described embodiment, also comprise other embodiment and variation etc.

Claims

1. semiconductor device is characterized in that possessing:

Be formed with the substrate of electronic circuit, wherein, the off-position place of substrate is formed with the off-position ditch;

The projection electrode that forms on the surface of described substrate; And

The top ends of the remaining above-mentioned projection electrode that forms on the surface of described substrate assigns to seal the resin bed of above-mentioned off-position ditch and projection electrode, and above-mentioned resin bed is thicker than the other parts of above-mentioned resin bed at above-mentioned off-position ditch place,

Described resin bed is formed by compression forming,

Described resin bed non-mold release agent,

Wherein, described semiconductor device cuts off substrate make with section cutting tool with resin bed at the off-position place of substrate.