CN1779954A - Light-emitting diode radiating substrate and production thereof - Google Patents
Light-emitting diode radiating substrate and production thereof Download PDFInfo
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- CN1779954A CN1779954A CNA2004100957584A CN200410095758A CN1779954A CN 1779954 A CN1779954 A CN 1779954A CN A2004100957584 A CNA2004100957584 A CN A2004100957584A CN 200410095758 A CN200410095758 A CN 200410095758A CN 1779954 A CN1779954 A CN 1779954A
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Abstract
A heat dissipating substrate of LED is composed of a low-expansibility layer and the high-heat-conductivity layers at both sides of said low-expansibility layer. Its advantage is high heat dissipating efficiency. Its preparing process is also disclosed.
Description
Technical field
The present invention relates to a kind of heat-radiating substrate and manufacture method thereof of light-emitting diode, relate in particular to the heat-radiating substrate that is applicable to light-emitting diode and the manufacture method of heat-radiating substrate.
Background technology
Face the application of following light-emitting diode (LED) in illumination and demonstration, make light-emitting diode (LED) must break away from the scope of traditional little electric current, electric current is increased to several times even hundreds of times, and on the power consumption of light-emitting diode (LED), also must be the increase of several times even hundreds of times.Certainly,, the manufacture of traditional light-emitting diode (LED) must be carried out big change, wherein, in the heat radiation of light-emitting diode (LED), must do more effective improvement, to promote the luminous efficiency of light-emitting diode (LED) in order to reach the high brightness effect.
Tradition light-emitting diode (LED) grows up on suitable substrate ray structure by the building crystal to grow mode, and for example the of heap of stone brilliant substrate of AlInGaP material is just selected the GaAs material for use; The of heap of stone brilliant substrate of AlInGaN material is then selected sapphire (Sapphire) material for use, but the made substrate heat conduction efficiency of these materials is not high, make when the high electric current that increases according to multiple is imported, can't evacuate according to the heat that multiple increases, and cause brilliant semiconductor light emitting structure of heap of stone under thermal effect, producing luminous efficiency seriously decays, simultaneously, allow brilliant semiconductor light emitting structure of heap of stone be under the condition of high temperature for a long time, its life-span can therefore seriously shorten, so that must do effective processing to the heat evacuation at the light-emitting diode (LED) of high power applications.
In view of this, just there is further heat-radiating substrate to apply to the development of light-emitting diode (LED), its practice is for to remove traditional GaAs substrate, semiconductor light emitting structure is adhered on the Si substrate, utilize the thermal conduction effect of Si substrate better than GaAs substrate, therefore can reach the purpose that reduces the decay of light-emitting diode (LED) luminous efficiency, but the Si substrate is a semi-conducting material, therefore along with the rising of temperature, its heat-conducting effect is decline rapidly thereupon, yet other semiconductor substrate also is so, so that can not effectively solve the heat dissipation problem of light-emitting diode.
At occurring in nature heat conduction best material is metal, its heat-conducting effect is all good than semiconductor substrate, as gold, silver, copper or aluminium etc., and its thermal conduction characteristic not Yin Wendu rising and descend rapidly, but these metals can not be directly as the substrate of light-emitting diode (LED), because the coefficient of expansion of metal is much larger than the coefficient of expansion of semi-conducting material, if directly directly be adhered to light-emitting diode (LED) structure on the metal substrate, then in the manufacture process of light-emitting diode (LED) structure, merge as heat, baking etc. all can destroy its lattice structure because of the thermal expansion of metal substrate, and cause light-emitting diode (LED) structural failure, therefore how to seek suitable heat-radiating substrate and manufacture method also is important problem.
Therefore, the inventor is according to these shortcomings and according to being engaged in the correlation experience that manufactures a product for many years, and concentrated the observation and research concentrated on studies and cooperated the utilization of scientific principle, and proposes a kind of reasonable in design and effectively improve the invention of this shortcoming.
Summary of the invention
Purpose of the present invention is to provide a kind of heat-radiating substrate of light-emitting diode, and it can produce the effect of high heat conduction and low bulk, and is suitable as the heat-radiating substrate of light emitting diode construction.
According to aforementioned goal of the invention, the invention provides a kind of heat-radiating substrate of light-emitting diode, be used for light emitting diode construction is arranged on this heat-radiating substrate, disperse the heat of this light emitting diode construction with conduction, this heat-radiating substrate comprises the micro-structure of low expansion bodies and high heat conductive body, and interconnect and pin down, to form the light-emitting diode radiating substrate of high-thermal-conductivity low-expansibility.
A kind of heat-radiating substrate of light-emitting diode, be used for light emitting diode construction is arranged on this heat-radiating substrate, disperse the heat of this light emitting diode construction with conduction, this heat-radiating substrate comprises low bulk layer body and high thermal conductivity layer body, and this high thermal conductivity layer body is fixedly installed on this low bulk layer body upside and downside respectively, utilizing this high thermal conductivity layer body to conduct the heat of this light emitting diode construction, and limit the degrees of expansion of this high thermal conductivity layer body by this low bulk layer body.
A kind of heat-radiating substrate of light-emitting diode is used for light emitting diode construction is arranged on this heat-radiating substrate, disperses the heat of this light emitting diode construction with conduction, and this heat-radiating substrate comprises the plate body that copper-tungsten or copper molybdenum alloy are formed.
A kind of heat-radiating substrate manufacture method of light-emitting diode, its step comprises:
Form low bulk layer body; And
Form the high thermal conductivity layer body respectively at this low bulk layer body upside and downside, forming the heat-radiating substrate of high heat conduction and low bulk, and this low bulk layer body and this high thermal conductivity layer body interconnect and limit.
A kind of heat-radiating substrate manufacture method of light-emitting diode, its step comprises:
High heat conduction powder and low bulk powder are provided;
Mix this high heat conduction powder and this low bulk powder;
This mixed high heat conduction powder of pressing and low bulk powder become solid shape; And the solid of this pressing of sintering, to form the heat-radiating substrate of high-thermal-conductivity low-expansibility.
A kind of heat-radiating substrate manufacture method of light-emitting diode, its step comprises:
The low bulk powder is provided;
This low bulk powder of pressing becomes solid shape;
Solid after this pressing of sintering has the sintered body of hole with formation;
The liquid phase high heat conductive body is contained in the hole that is impregnated into this sintered body; And
In this sintered body, solidify this liquid phase high heat conductive body, to form the heat-radiating substrate of high-thermal-conductivity low-expansibility.
In sum,, can produce the effect of high heat conduction and low bulk, and when making this light emitting diode construction be arranged on this heat-radiating substrate, can not destroy light emitting diode construction because of expanding with heat and contract with cold of this heat-radiating substrate by the heat-radiating substrate of light-emitting diode of the present invention.
Description of drawings
Fig. 1 is the constitutional diagram of light emitting diode construction body of the present invention and heat-radiating substrate;
Fig. 2 is a stratiform light-emitting diode radiating substrate schematic diagram of the present invention;
Fig. 3 is another schematic diagram of stratiform light-emitting diode radiating substrate of the present invention;
Fig. 4 is the light-emitting diode radiating substrate schematic diagram of sintered body shape of the present invention;
Fig. 5 is another schematic diagram of light-emitting diode radiating substrate of sintered body shape of the present invention;
Fig. 6 is the light-emitting diode radiating substrate schematic diagram with alloy composition of the present invention.
Embodiment
See also Fig. 1 to shown in Figure 6, the present invention is a kind of heat-radiating substrate of light-emitting diode, be used for light emitting diode construction 10 is arranged on this heat-radiating substrate 20, disperse the heat of this light emitting diode construction 10 with conduction, this heat-radiating substrate 20 comprises the heat-radiating substrate 20 that low expansion bodies 21 and high heat conductive body 22 constitute, and this low expansion bodies 21 and this high heat conductive body 22 are interconnected pin down, to form the light-emitting diode radiating substrate of high-thermal-conductivity low-expansibility.
See also shown in Figure 2, the heat-radiating substrate 20 of this light-emitting diode wherein, comprise low bulk layer body 21 ' and high thermal conductivity layer body 22 ', and this high thermal conductivity layer body 22 ' is fixedly connected on the both sides up and down of this low bulk layer body 21 ' respectively, when therefore this light emitting diode construction 10 being arranged on this high thermal conductivity layer body 22 ', can utilize this high thermal conductivity layer body 22 ' to conduct the heat that this light emitting diode construction 10 produces, and limit the degrees of expansion of this high thermal conductivity layer body 22 ' by this low bulk layer body 21 ', destroy with the expansion of the lattice of avoiding this light emitting diode construction 10 because of this high thermal conductivity layer body 22 ', and this low bulk layer body 21 ' can be tungsten (W) metal plate or molybdenum (Mo) metal plate, and these plate bodys be roll compacting together or weld together, or this high thermal conductivity layer body 22 ' can be sintered body, and it is separately positioned on the both sides up and down of this low bulk plate body 21 '.
In addition, the heat-radiating substrate manufacture method of this light-emitting diode the steps include:
Form low bulk layer body 21 '; And
Form high thermal conductivity layer body 22 ' respectively at this low bulk layer body 21 ' upside and downside, this low bulk layer body 21 ' interconnects and limits this high thermal conductivity layer body 22 ' with this high thermal conductivity layer body 22 ' and expands.Wherein these layers body can utilize evaporation, plating, founding or electroforming mode to make.See also shown in Figure 3ly, can further form this low bulk layer body 21 ' respectively, and add this high thermal conductivity layer body 22 ' in its outside in regular turn, therefore form multi-lamellar heat-radiating substrate 20 in the outside of this high thermal conductivity layer body 22 '.
See also shown in Figure 4, wherein the heat-radiating substrate 20 of this light-emitting diode comprises the micro-structure of low expansion bodies 21 and high heat conductive body 22, and interconnect and pin down, to form the light-emitting diode radiating substrate 20 of high-thermal-conductivity low-expansibility, wherein the micro-structure of this low expansion bodies 21 is a low bulk powder 21 "; as be tungsten (W) metal-powder or molybdenum (Mo) metal-powder; diamond powder or carborundum (SiC) powder etc.; the micro-structure of this high heat conductive body 22 can be high heat conduction powder 22 ", as be metal powders such as copper, and make this low bulk powder 21 with sintering processing " and this high heat conduction powder 22 " sintering the heat-radiating substrate 20 of sintered body into, its manufacturing step comprises:
High heat conduction powder 22 is provided " and low bulk powder 21 ";
Mix this high heat conduction powder 22 " and this low bulk powder 21 ";
This mixed high heat conduction powder 22 of pressing " and low bulk powder 21 " solid shape become; And this solid that is pressed into of sintering, to form the heat-radiating substrate 20 of high-thermal-conductivity low-expansibility.
See also shown in Figure 5, another manufacture method, its step comprises:
Provide low bulk powder 21 ";
This low bulk powder 21 of pressing " become solid shape;
Solid after this pressing of sintering has the sintered body of hole with formation;
Liquid phase high heat conductive body 22 is contained in the hole that is impregnated into this sintered body; And
In this sintered body, solidify this liquid phase high heat conductive body 22, to form the heat-radiating substrate 20 of high-thermal-conductivity low-expansibility.
And wherein this liquid phase high heat conductive body is copper metallic solutions such as (Cu).
In addition, see also shown in Figure 6ly, the heat-radiating substrate 20 available copper tungsten alloys or the copper molybdenum alloy manufacturing of this light-emitting diode, and can utilize sintered copper tungsten alloy powder or copper molybdenum alloy powder are to form the heat-radiating substrate 20 of high heat transfer low bulk.
By above narration to the preferable specific embodiment of the present invention, feature of the present invention and spirit can be more clearly described in hope.Yet above disclosed preferred embodiment is not to be used for limiting invention which is intended to be protected.On the contrary, the above-mentioned explanation and the change arrangement of various isotropisms thereof all belong to invention which is intended to be protected.Therefore the protection range of the present patent application patent should be done the broadest explanation according to above-mentioned explanation, contain simultaneously described claim with and all may be impartial in fact change and impartial arrangements.
The drawing reference numeral explanation
10 light emitting diode constructions, 20 heat radiation plate bodys
21 low expansion bodies, 21 ' low bulk layer body
21 " low bulk powder 22 high heat conductive bodies
22 ' high thermal conductivity layer body 22 " high heat conduction powder
Claims (27)
1. the heat-radiating substrate of a light-emitting diode, be used for light emitting diode construction is arranged on the described heat-radiating substrate, disperse the heat of described light emitting diode construction with conduction, it is characterized in that, described heat-radiating substrate comprises the micro-structure of low expansion bodies and high heat conductive body, and interconnect and pin down, to form the light-emitting diode radiating substrate of high-thermal-conductivity low-expansibility.
2. the heat-radiating substrate of light-emitting diode as claimed in claim 1 is characterized in that, the micro-structure of described low expansion bodies and high heat conductive body is a powder, and is interconnected to sintered body.
3. the heat-radiating substrate of light-emitting diode as claimed in claim 1 is characterized in that, the micro-structure of described low expansion bodies is a powder, and is interconnected to the sintered body with hole, and described high heat conductive body is molten places in the hole of described sintered body.
4. the heat-radiating substrate of light-emitting diode as claimed in claim 1 is characterized in that, the micro-structure of described low expansion bodies can be tungsten metal-powder or molybdenum powder, diamond powder or silicon carbide powder.
5. the heat-radiating substrate of light-emitting diode as claimed in claim 1 is characterized in that, the micro-structure of described high heat conductive body can be the copper metallic object.
6. the heat-radiating substrate of a light-emitting diode is used for light emitting diode construction is arranged on the described heat-radiating substrate, disperses the heat of described light emitting diode construction with conduction, it is characterized in that described heat-radiating substrate comprises:
Low bulk layer body; And
The high thermal conductivity layer body, it is fixedly installed on described low bulk layer body upside and downside respectively, conducts the heat of described light emitting diode construction to utilize described high thermal conductivity layer body, and is limited the degrees of expansion of described high thermal conductivity layer body by described low bulk layer body.
7. the heat-radiating substrate of light-emitting diode as claimed in claim 6 is characterized in that, described low bulk layer body is tungsten metal level or molybdenum layer.
8. the heat-radiating substrate of light-emitting diode as claimed in claim 6 is characterized in that, described high thermal conductivity layer body can be copper metal layer.
9. as the heat-radiating substrate of claim 7 or 8 described light-emitting diodes, it is characterized in that described layer body is plate body.
10. the heat-radiating substrate of light-emitting diode as claimed in claim 6 is characterized in that, described high thermal conductivity layer body is a sintered powder.
11. the heat-radiating substrate of a light-emitting diode, be used for light emitting diode construction is arranged on the described heat-radiating substrate, disperse the heat of described light emitting diode construction with conduction, it is characterized in that, described heat-radiating substrate comprises the plate body that copper-tungsten or copper molybdenum alloy are formed.
12. the heat-radiating substrate manufacture method of a light-emitting diode is characterized in that, its step comprises:
Form low bulk layer body; And
Form the high thermal conductivity layer body respectively at described low bulk layer body upside and downside, forming the heat-radiating substrate of high heat conduction and low bulk, and described low bulk layer body and described high thermal conductivity layer body interconnect and limit.
13. the heat-radiating substrate manufacture method of light-emitting diode as claimed in claim 12 is characterized in that, described layer body be roll compacting together.
14. the heat-radiating substrate manufacture method of light-emitting diode as claimed in claim 12 is characterized in that, described layer body is to weld together.
15. the heat-radiating substrate manufacture method of light-emitting diode as claimed in claim 12 is characterized in that, described layer body is to utilize the mode of evaporation to make.
16. the heat-radiating substrate manufacture method of light-emitting diode as claimed in claim 12 is characterized in that, described layer body is to utilize the mode of electroplating to make.
17. the heat-radiating substrate manufacture method of light-emitting diode as claimed in claim 12 is characterized in that, described layer body is to utilize the mode of founding to make.
18. the heat-radiating substrate manufacture method of light-emitting diode as claimed in claim 12 is characterized in that, described layer body is to utilize the mode of electroforming to make.
19. the heat-radiating substrate manufacture method of light-emitting diode as claimed in claim 12 is characterized in that, described low bulk layer body can be tungsten metal level or molybdenum layer.
20. the heat-radiating substrate manufacture method of light-emitting diode as claimed in claim 12 is characterized in that, described high thermal conductivity layer body can be copper metal layer.
21. the heat-radiating substrate manufacture method as claim 19 or 20 described light-emitting diodes is characterized in that, described layer body is plate body.
22. the heat-radiating substrate manufacture method of a light-emitting diode is characterized in that, its step comprises:
High heat conduction powder and low bulk powder are provided;
Mix described high heat conduction powder and described low bulk powder;
Described mixed high heat conduction powder of pressing and low bulk powder become solid shape; And
The solid of the described pressing of sintering is to form the heat-radiating substrate of high-thermal-conductivity low-expansibility.
23. the heat-radiating substrate manufacture method of light-emitting diode as claimed in claim 22 is characterized in that, described low bulk powder is tungsten metal-powder, molybdenum powder, diamond powder or silicon carbide powder.
24. the heat-radiating substrate manufacture method of light-emitting diode as claimed in claim 22 is characterized in that, described high heat conduction powder is the copper metal powder body.
25. the heat-radiating substrate manufacture method of a light-emitting diode is characterized in that, its step comprises:
The low bulk powder is provided;
The described low bulk powder of pressing becomes solid shape;
Solid after the described pressing of sintering has the sintered body of hole with formation;
The liquid phase high heat conductive body is contained in the hole that is impregnated into described sintered body; And
In described sintered body, solidify described liquid phase high heat conductive body, to form the heat-radiating substrate of high-thermal-conductivity low-expansibility.
26. the heat-radiating substrate manufacture method of light-emitting diode as claimed in claim 25 is characterized in that, described low bulk powder is tungsten metal-powder or molybdenum powder, diamond powder or silicon carbide powder.
27. the heat-radiating substrate manufacture method of light-emitting diode as claimed in claim 25 is characterized in that, described liquid phase high heat conductive body is the copper molten metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100957584A CN100505222C (en) | 2004-11-19 | 2004-11-19 | Light-emitting diode radiating substrate and production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100957584A CN100505222C (en) | 2004-11-19 | 2004-11-19 | Light-emitting diode radiating substrate and production thereof |
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| Publication Number | Publication Date |
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| CN1779954A true CN1779954A (en) | 2006-05-31 |
| CN100505222C CN100505222C (en) | 2009-06-24 |
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| CNB2004100957584A Active CN100505222C (en) | 2004-11-19 | 2004-11-19 | Light-emitting diode radiating substrate and production thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011113288A1 (en) * | 2010-03-15 | 2011-09-22 | 厦门聚萤光电科技有限公司 | High power led illuminating device |
| CN103931006A (en) * | 2011-11-11 | 2014-07-16 | 株式会社新王材料 | Substrate for light emitting elements, light emitting module, and method for manufacturing light emitting module |
| CN106931331A (en) * | 2015-12-31 | 2017-07-07 | 深圳市光峰光电技术有限公司 | A kind of cooling base and preparation method thereof, related light emitting module and preparation method |
| CN113970872A (en) * | 2020-07-24 | 2022-01-25 | 中强光电股份有限公司 | Wavelength conversion element and projector |
-
2004
- 2004-11-19 CN CNB2004100957584A patent/CN100505222C/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011113288A1 (en) * | 2010-03-15 | 2011-09-22 | 厦门聚萤光电科技有限公司 | High power led illuminating device |
| CN103931006A (en) * | 2011-11-11 | 2014-07-16 | 株式会社新王材料 | Substrate for light emitting elements, light emitting module, and method for manufacturing light emitting module |
| CN103931006B (en) * | 2011-11-11 | 2017-03-01 | 日立金属株式会社 | The manufacture method of light-emitting component substrate, luminescence component and luminescence component |
| CN106931331A (en) * | 2015-12-31 | 2017-07-07 | 深圳市光峰光电技术有限公司 | A kind of cooling base and preparation method thereof, related light emitting module and preparation method |
| CN113970872A (en) * | 2020-07-24 | 2022-01-25 | 中强光电股份有限公司 | Wavelength conversion element and projector |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100505222C (en) | 2009-06-24 |
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