CN1778505A - Production of extremely profiled fine electrode for processing electric spark - Google Patents
Production of extremely profiled fine electrode for processing electric spark Download PDFInfo
- Publication number
- CN1778505A CN1778505A CN 200410095293 CN200410095293A CN1778505A CN 1778505 A CN1778505 A CN 1778505A CN 200410095293 CN200410095293 CN 200410095293 CN 200410095293 A CN200410095293 A CN 200410095293A CN 1778505 A CN1778505 A CN 1778505A
- Authority
- CN
- China
- Prior art keywords
- profiled
- extremely
- fine electrode
- photoresist
- electrically
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Abstract
A technology for manufacturing a shaped very long and fine electrode used for electrospark machining includes such steps as coating photoresist onto electrically conductive substance, aligning the mask with said substrate, optical exposing, developing to obtain a microstructure, electrocasting metal in the seam of said microstructure, repeating above-said steps, and removing photoresist and substrate to obtain said metallic electrode.
Description
Technical field
The present invention relates to the manufacture method of the extremely profiled fine electrode that spark machined uses, belong to the special process and Micrometer-Nanometer Processing Technology field.
Background technology
Spark machined is widely used in industry as one of special processing technology.Along with the development of miniaturization in the industry, precise treatment, dark aperture especially the dark aperture of abnormity be processed into developing direction with high added value.Carry out spark-erosion sinking processing, corresponding tool-electrode must be arranged.Industrial quarters generally adopts hot candied method to produce micro-electrode now, this method is very suitable for circular electrode, but being difficult to make special-shaped electrode, is that the making of special-shaped hot candied mould is very difficult on the one hand, is that size and dimension is difficult to accurate control in the hot candied process on the other hand.The applicant has proposed a kind of manufacture method of micro-electrode of spark-erosion sinking processing usefulness in patent ZL00121477.2, obtain special-shaped micro-electrode by electroforming in the hole that forms in degree of depth photoetching, because the photoetching degree of depth is not more than 2 millimeters usually in this method, therefore electrode length also just is not more than 2 millimeters, and this has just limited the degree of depth of processing aperture.
Summary of the invention
The objective of the invention is to, provide the manufacture method of the extremely profiled fine electrode that spark machined uses, to overcome the not enough shortcoming of electrode length among the patent ZL00121477.2.Directly grow differently on base vertically upward with electrode among the patent ZL00121477.2, electrode removes at last to hold up behind the substrate and uses with the base upwards growth that couches on electrically-conductive backing plate in this patent.The another one difference is in addition, and the shape of shaped electrode is not directly to form by photoetching in this patent, but synthesize by the layering manufacturing.
For achieving the above object, the technical scheme taked of the present invention is:
The manufacture method of the extremely profiled fine electrode that a kind of spark machined of the present invention is used is characterized in that, comprises the steps:
Step 1: resist coating on electrically-conductive backing plate;
Step 2: mask plate is aimed at post-exposure with electrically-conductive backing plate, obtains the photoresist micro-structural after the development;
Step 3: electroforming metal in the slit of photoresist micro-structural;
Step 4: repeat the 1-3 step;
Step 5: obtain required metal electrode after removing photoresist and electrically-conductive backing plate.
Wherein said electrically-conductive backing plate is the silicon chip or the sheet glass of titanium plate, surperficial evaporation metal chromium and copper.
Wherein said photoresist is the positive glue of AZ series or the negative glue of SU8 series.
Wherein said mask plate is the glass plate of surface applied Micropicture chromium film.
Wherein said metal is copper, silver, gold, iron, cobalt or nickel.
Description of drawings
Be the effect that further specifies technical characterictic of the present invention and can reach, the present invention made a detailed description below in conjunction with drawings and Examples, wherein:
The manufacture process schematic diagram of the extremely profiled fine electrode that Fig. 1 uses for spark machined of the present invention;
The stereoscan photograph of the extremely profiled fine electrode that the spark machined that Fig. 2 obtains after enforcement for the embodiment of the invention is used.
The specific embodiment
At first see also shown in Figure 1, the manufacture method of the extremely profiled fine electrode that spark machined of the present invention is used, its manufacture process by the gluing of continuous repetition, aim at photoetching, electroforming constitutes, obtain removing photoresist and electrically-conductive backing plate has just obtained electrode at last after the required structure.With double-deck T shape electrode is example.
The manufacture method of the extremely profiled fine electrode that a kind of spark machined of the present invention is used is characterized in that, comprises the steps:
Step 1: be coated with last layer photoresist 2 on electrically-conductive backing plate 1, described electrically-conductive backing plate can be the silicon chip or the sheet glass of titanium plate, surperficial evaporation metal chromium and copper, and described photoresist is the positive glue of AZ series or the negative glue of SU8 series;
Step 2: mask plate 3 is aimed at post-exposure with electrically-conductive backing plate 1, develops to obtain plastic structure, and described mask plate is the glass plate of surface applied Micropicture chromium film;
Step 3: electroforming metal 4 in the hole of plastic structure, and described metal is copper, silver, gold, iron, cobalt or nickel;
Step 4: on the electrically-conductive backing plate 1 that contains photoresist 2 and metal 4, be coated with last layer photoresist 5 again;
Step 5: mask plate 6 is aimed at post-exposure with the electrically-conductive backing plate 1 that contains photoresist 2 and metal 4, develops to obtain new plastic structure;
Step 6: electroforming metal 7 in new plastic structure hole;
Step 7: obtain the electrode that metal 4 and metal 7 constitute behind removal photoresist 2,5 and the electrically-conductive backing plate 1.
Employing has the general ultraviolet photoetching machine of alignment device.For different photoresists, adopt corresponding special-purpose developer solution and the liquid that removes photoresist.Electroforming is carried out in electrotyping bath, and technological parameter is identical with common electroforming.
Seeing also shown in Figure 2ly again, is the stereoscan photograph of the extremely profiled fine electrode used of spark machined that the embodiment of the invention obtains after enforcement.
The length of T shape electrode is 2 millimeters among the figure, and the width of horizontal line is 380 microns, and thickness is 120 microns, and the width of vertical line is 320 microns, and thickness is 80 microns.Surface at metallic titanium plate is coated with SU8-10 glue with spin-coating method, and 70 ℃ were toasted 3 hours down, and thickness is 150 microns.Litho machine ultraviolet wavelength is 316 nanometers, and intensity is 1000 watts, exposes 10 minutes, develops 40 minutes.Copper facing in the copper sulphate electroplate liquid (plating solution formula is to add 25 milliliters of sulfuric acid in the cupric sulfate pentahydrate of 200 grams per liters), current density is 10 milliamperes/square centimeter, temperature is 35 ℃, when copper grows into thickness near photoresist, stops to electroplate.Be coated with SU8-10 glue with spin-coating method again on the titanium plate surface that contains photoresist and metallic copper, 70 ℃ were toasted 7 hours down, and thickness is 350 microns.Litho machine ultraviolet wavelength is 316 nanometers, and intensity is 1000 watts, exposes 40 minutes, develops 180 minutes.Copper facing in the copper sulphate electroplate liquid (plating solution formula is to add 25 milliliters of sulfuric acid in the cupric sulfate pentahydrate of 200 grams per liters), current density is 10 milliamperes/square centimeter, temperature is 35 ℃, when copper grows into thickness near photoresist, stops to electroplate.In liquid is removed photoresist in special use, remove the SU8 photoresist, in 20% hydrofluoric acid, remove the titanium plate, just obtain copper electrode.During scanning electron microscopic observation, electron accelerating voltage is 20 kilovolts, and multiplication factor is 56 times.
Claims (5)
1, the manufacture method of the extremely profiled fine electrode used of a kind of spark machined is characterized in that, comprises the steps:
Step 1: resist coating on electrically-conductive backing plate;
Step 2: mask plate is aimed at post-exposure with electrically-conductive backing plate, obtains the photoresist micro-structural after the development;
Step 3: electroforming metal in the slit of photoresist micro-structural;
Step 4: repeat the 1-3 step;
Step 5: obtain required metal electrode after removing photoresist and electrically-conductive backing plate.
2, the manufacture method of extremely profiled fine electrode according to claim 1 is characterized in that, wherein said electrically-conductive backing plate is the silicon chip or the sheet glass of titanium plate, surperficial evaporation metal chromium and copper.
3, the manufacture method of extremely profiled fine electrode according to claim 1 is characterized in that, wherein said photoresist is the positive glue of AZ series or the negative glue of SU8 series.
4, the manufacture method of extremely profiled fine electrode according to claim 1 is characterized in that, wherein said mask plate is the glass plate of surface applied Micropicture chromium film.
5, the manufacture method of extremely profiled fine electrode according to claim 1 is characterized in that, wherein said metal is copper, silver, gold, iron, cobalt or nickel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410095293 CN1778505A (en) | 2004-11-19 | 2004-11-19 | Production of extremely profiled fine electrode for processing electric spark |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410095293 CN1778505A (en) | 2004-11-19 | 2004-11-19 | Production of extremely profiled fine electrode for processing electric spark |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1778505A true CN1778505A (en) | 2006-05-31 |
Family
ID=36769034
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200410095293 Pending CN1778505A (en) | 2004-11-19 | 2004-11-19 | Production of extremely profiled fine electrode for processing electric spark |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1778505A (en) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100544874C (en) * | 2006-10-20 | 2009-09-30 | 南京航空航天大学 | Electrochemical corrosion processing method with micro fine cylindrical group electrode |
| CN101817108A (en) * | 2010-03-24 | 2010-09-01 | 江苏大学 | Method and device for realizing photoelectrochemical micro-etch processing of masked electrode |
| CN102147569A (en) * | 2010-12-02 | 2011-08-10 | 天津海鸥表业集团有限公司 | Processing method of micro-component in multi-layer structure and solidified SU-8 photoresist sheet |
| CN102320559A (en) * | 2011-09-14 | 2012-01-18 | 上海交通大学 | Preparation method of hollow-structured micro-array electrode |
| CN102723259A (en) * | 2012-06-12 | 2012-10-10 | 大连理工大学 | UV-LIGA (Ultraviolet-Lithografie, Galvanoformung, Abformung) method for manufacturing multi layers of mini-type inductance coils on silicon substrate |
| CN102054667B (en) * | 2009-10-29 | 2012-11-07 | 北大方正集团有限公司 | Method for applying photoresist lifting-off technology to protect photoetching alignment marks |
| CN103021803A (en) * | 2011-09-26 | 2013-04-03 | 上海华虹Nec电子有限公司 | Method for protecting thick metal layer photoetching alignment mark |
| CN104909335A (en) * | 2015-04-28 | 2015-09-16 | 苏州含光微纳科技有限公司 | Preparation method of high depth to width ratio micro electric spark array electrode |
| CN105220185A (en) * | 2015-10-29 | 2016-01-06 | 广东工业大学 | A kind of preparation method of super oleophobic micro-pillar array Surface Texture |
| CN105223788A (en) * | 2015-10-08 | 2016-01-06 | 济南市半导体元件实验所 | A kind of photoetching technological method of efficient stripping photoresist mask |
| CN102124409B (en) * | 2008-08-20 | 2016-04-20 | 尼瓦洛克斯-法尔股份有限公司 | The method of multi-layer metal parts is manufactured by UV-LIGA technology |
| CN106702439A (en) * | 2016-12-22 | 2017-05-24 | 南京理工大学常熟研究院有限公司 | Directional electrocasting method of miniature metal tube |
| CN109128403A (en) * | 2018-07-24 | 2019-01-04 | 杭州电子科技大学 | Metal surface method for manufacturing microstructure and device based on atomic migration orientation regulation |
| CN110806496A (en) * | 2019-10-10 | 2020-02-18 | 上海应用技术大学 | All-metal micro-inertia system device and processing method thereof |
| CN112981470A (en) * | 2021-02-05 | 2021-06-18 | 吉林大学 | Electroforming copper solution, preparation method and application thereof, and copper electrode |
-
2004
- 2004-11-19 CN CN 200410095293 patent/CN1778505A/en active Pending
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100544874C (en) * | 2006-10-20 | 2009-09-30 | 南京航空航天大学 | Electrochemical corrosion processing method with micro fine cylindrical group electrode |
| CN102124409B (en) * | 2008-08-20 | 2016-04-20 | 尼瓦洛克斯-法尔股份有限公司 | The method of multi-layer metal parts is manufactured by UV-LIGA technology |
| CN102054667B (en) * | 2009-10-29 | 2012-11-07 | 北大方正集团有限公司 | Method for applying photoresist lifting-off technology to protect photoetching alignment marks |
| CN101817108A (en) * | 2010-03-24 | 2010-09-01 | 江苏大学 | Method and device for realizing photoelectrochemical micro-etch processing of masked electrode |
| CN102147569A (en) * | 2010-12-02 | 2011-08-10 | 天津海鸥表业集团有限公司 | Processing method of micro-component in multi-layer structure and solidified SU-8 photoresist sheet |
| CN102147569B (en) * | 2010-12-02 | 2012-10-10 | 天津海鸥表业集团有限公司 | Processing method of micro-component in multi-layer structure and solidified SU-8 photoresist sheet |
| CN102320559A (en) * | 2011-09-14 | 2012-01-18 | 上海交通大学 | Preparation method of hollow-structured micro-array electrode |
| CN102320559B (en) * | 2011-09-14 | 2014-06-18 | 上海交通大学 | Preparation method of hollow-structured micro-array electrode |
| CN103021803A (en) * | 2011-09-26 | 2013-04-03 | 上海华虹Nec电子有限公司 | Method for protecting thick metal layer photoetching alignment mark |
| CN102723259A (en) * | 2012-06-12 | 2012-10-10 | 大连理工大学 | UV-LIGA (Ultraviolet-Lithografie, Galvanoformung, Abformung) method for manufacturing multi layers of mini-type inductance coils on silicon substrate |
| CN102723259B (en) * | 2012-06-12 | 2015-03-11 | 大连理工大学 | UV-LIGA (Ultraviolet-Lithografie, Galvanoformung, Abformung) method for manufacturing multi layers of mini-type inductance coils on silicon substrate |
| CN104909335A (en) * | 2015-04-28 | 2015-09-16 | 苏州含光微纳科技有限公司 | Preparation method of high depth to width ratio micro electric spark array electrode |
| CN104909335B (en) * | 2015-04-28 | 2016-06-29 | 苏州含光微纳科技有限公司 | A kind of preparation method of high depth-to-width ratio micro electric spark array electrode |
| CN105223788A (en) * | 2015-10-08 | 2016-01-06 | 济南市半导体元件实验所 | A kind of photoetching technological method of efficient stripping photoresist mask |
| CN105220185A (en) * | 2015-10-29 | 2016-01-06 | 广东工业大学 | A kind of preparation method of super oleophobic micro-pillar array Surface Texture |
| CN106702439A (en) * | 2016-12-22 | 2017-05-24 | 南京理工大学常熟研究院有限公司 | Directional electrocasting method of miniature metal tube |
| CN109128403A (en) * | 2018-07-24 | 2019-01-04 | 杭州电子科技大学 | Metal surface method for manufacturing microstructure and device based on atomic migration orientation regulation |
| CN110806496A (en) * | 2019-10-10 | 2020-02-18 | 上海应用技术大学 | All-metal micro-inertia system device and processing method thereof |
| CN112981470A (en) * | 2021-02-05 | 2021-06-18 | 吉林大学 | Electroforming copper solution, preparation method and application thereof, and copper electrode |
| CN112981470B (en) * | 2021-02-05 | 2022-03-08 | 吉林大学 | Electroforming copper solution, preparation method and application thereof, and copper electrode |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1778505A (en) | Production of extremely profiled fine electrode for processing electric spark | |
| DE69208348T2 (en) | Electrochemical micromachining tool and method for applying patterns by means of stencils on thin metal films on a non-conductive or poorly conductive surface | |
| JP5214243B2 (en) | Manufacturing process of micro and nano devices | |
| WO2007064804A1 (en) | Electroform, methods of making electroforms, and products made from electroforms | |
| CN1693182A (en) | Deep submicron three-dimensional rolling mould and its mfg. method | |
| US20070170064A1 (en) | Method of electrolytically depositing materials in a pattern directed by surfactant distribution | |
| WO2005100642A1 (en) | Electrochemical deposition process and devices obtained by such process | |
| US9636639B2 (en) | Porous metallic membrane | |
| KR101165396B1 (en) | Forming method of nano structure using the metal nano ring pattern | |
| US20070034518A1 (en) | Method of patterning ultra-small structures | |
| CN1740404A (en) | Method for making metal grating template | |
| JP2001207288A (en) | Method for electrodeposition into pore and structure | |
| JP4257676B2 (en) | Forming of three-dimensional microstructures by plating | |
| CN1142462C (en) | Method for manufacturing formed electrode for micro electric discharge machining | |
| JPH10140399A (en) | Pattern forming method | |
| US20210047745A1 (en) | Electrochemical additive manufacturing of articles | |
| CN111748829A (en) | Three-beat-type liquid-based metal ion source electrodeposition micro additive manufacturing method | |
| KR20080029101A (en) | Printed circuit board and manufacturing method thereof | |
| CN1590593A (en) | Model manufacturing method | |
| KR102279623B1 (en) | Manufacturing Method of Flexible Circuit Board Using Master Mold with Fine Pattern | |
| CN112904664B (en) | Micro-nano die and manufacturing method thereof | |
| CN1745199A (en) | Formwork manufacture | |
| CN114657624B (en) | Electrochemical preparation method of metal nanowire array | |
| KR101106694B1 (en) | Metal nono ring pattern and forming method of the same | |
| CN1635406A (en) | Method for manufacturing light guiding plate core |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |