CN1777346B - Plama treatment device - Google Patents

Plama treatment device Download PDF

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Publication number
CN1777346B
CN1777346B CN2005101253060A CN200510125306A CN1777346B CN 1777346 B CN1777346 B CN 1777346B CN 2005101253060 A CN2005101253060 A CN 2005101253060A CN 200510125306 A CN200510125306 A CN 200510125306A CN 1777346 B CN1777346 B CN 1777346B
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CN
China
Prior art keywords
plasma
electrode
gas
plasma source
substrate
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Expired - Fee Related
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CN2005101253060A
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Chinese (zh)
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CN1777346A (en
Inventor
申寅澈
张圣基
金兑昱
柳炅昊
郑修然
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Kc Ltd By Share Ltd
KCTech Co Ltd
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KC Tech Co Ltd
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Publication date
Priority claimed from KR1020040092904A external-priority patent/KR101071429B1/en
Priority claimed from KR1020040115329A external-priority patent/KR20060075949A/en
Priority claimed from KR1020040114723A external-priority patent/KR20060076333A/en
Priority claimed from KR1020050046225A external-priority patent/KR101195137B1/en
Priority claimed from KR1020050073542A external-priority patent/KR100773725B1/en
Priority claimed from KR1020050076654A external-priority patent/KR100541867B1/en
Application filed by KC Tech Co Ltd filed Critical KC Tech Co Ltd
Publication of CN1777346A publication Critical patent/CN1777346A/en
Application granted granted Critical
Publication of CN1777346B publication Critical patent/CN1777346B/en
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Plasma Technology (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

The invention relates to a plasma treatment device, which can improve the uniformity of the plasma density, plasma electrode structure, electrode manufacturing method and electrode cooling method which is fit for the substrate enlargement. Additionally, it relates to the plasma source and plasma treatment device and control method. The inventive ion source has a plurality of electrode unit and a pair of electrode plates. The pair of electrode plates makes the electrode unit assemble based on the width of the treated articles so that the electrode plates are disposed on the treated articles. Further, the electrode unit comprises: unit electrode plate, electrode formed on the unit electrode plate and gap groove formed on one side of the unit electrode plate.

Description

Plasma treatment appts
Technical field
The present invention relates to plasma (plasma) processing unit, more particularly, relate to the uniformity that can improve plasma density, and the plasma electrode structure of the trend that maximizes applicable to nearest substrate and electrode manufacturing method thereof, electrode cooling means.
In addition, relate to the plasma source that utilizes above-mentioned plasma electrode structure and plasma treatment appts, with and control method.
Background technology
Generally, producing must be through the matting of substrate in the process of FPD such as TFT LCD, PDP, OLED and semiconductor element etc.
The matting of substrate has in the past been used the wet type operation, but recently, the plasma technologies that use as the dry cleaning technology more.
Fig. 1 is the drawing that expression utilizes the cleaning device 100 of general plasma source 130.
As shown in Figure 1, the cleaning device 100 that utilizes plasma source 130 is by plasma source 130, power supplier 140, gas supply device 120, constitute with transfer device 160, described plasma source 130 is the jet surface oxygen base of LCD glass (glass) 150 to cleaning object, described power supplier 140 applies alternating voltage to above-mentioned plasma source 130, described gas supply device 120 is supplied with nitrogen by the pipe arrangement that is connected with above-mentioned plasma source 130, oxygen, gases such as air, described transfer device 160 is transferred with certain speed LCD glass 150 when plasma source 130 is implemented the plasma atmospheric pressure discharges to a direction.
If observe the cleaning process in such cleaning device 100, then be known as below and realize cleaning describedly, that is: the transfer device 160 that is formed on the bottom of LCD glass 150 is that LCD glass 150 is transferred to a direction with certain speed with cleaning object, and the plasma source 130 that is formed on top this moment is implemented the plasma atmospheric pressure discharges to the surface of LCD glass 150.
At this moment, in above-mentioned cleaning device 100, above-mentioned plasma source 130 is connected by high-voltage line with power supplier 140 to its supply power.
At this moment, the voltage that power supplier 140 produces is that peak value is the high pressure about 1kv～40kv, and because high-voltage line exposes externally environment, therefore, often owing to exposing the danger that has electric security incident.
In addition, in the operation of built-in mode, the situation that unusual gas device unusual of non-plasma source 130 often takes place or interrupt the handover of LCD glass 150 owing to the reason on the operation temporarily, and not only need to stop transfer device 160 this moment, and have to close plasma source 130.
If according to such needs, close plasma source 130, in a single day opening after then closing needs stabilizing take, in addition, exist the performance of performance own to need several minutes temporal loss, the loss on the expense before.
Fig. 2 a to Fig. 2 d is the drawing of illustrated plasma source 200 in the presentation graphs 1.
Fig. 2 a is the vertical view of plasma source 200, and Fig. 2 b is the schematic side sectional view of illustrated plasma source 200 among Fig. 2 a.
Shown in Fig. 2 a and Fig. 2 b, plasma source 200 in the past has in two sides from the gas of gas supply device supply gas supplies with 8 altogether of port 200a, 200b, 200c, 200d, 200e, 200f, 200g, 200h.
In addition, supply with the main body that gas that port 200a, 200b, 200c, 200d, 200e, 200f, 200g, 200h flow into fills up plasma source 200 by 8 gas altogether, and its top has gas distributor (gas distributor) 210, and the gas of above-mentioned inflow is evenly distributed in plasma source inside.
In addition, the bottom of gas distributor 210 have produce by dielectric charging and discharge isoionic on/bottom dielectric 220,230.
In addition, in order to apply alternating voltage on last/bottom dielectric 220,230, the bottom surfaces that reaches bottom dielectric 230 on top dielectric 220 forms upper electrode (not shown) and lower electrode (not shown) respectively.
If it is observe gas flow path and substrate cleaning process that the quilt in the plasma source 200 that constitutes like this flows into, then as described below.
Promptly, at first supply with the upper buffer layer 240 that gas that port flows into temporarily fills up the plasma source main body by 8 gas altogether, afterwards, the 1st gas inflow entrance 211,212 of the central authorities of the gas that is stored in upper buffer layer 240 by being formed on gas distributor 210 flow into lower buffer layer 250.
Afterwards, the 2nd gas inflow entrance 221,222 of the two sides of the gas that flow into lower buffer layer 250 by being formed on top dielectric 220 flow into dielectric space, next door 260 and produces plasma, and the plasma that produces is injected by the flow export 231 that is formed on the dielectric of bottom, and cleans the organic substance 280 on the LCD glass 270.
At this moment, be actually the uniformity that forms gas density and as the effect of buffer area performance resilient coating, it only is lower buffer layer 250, the density that flow into the gas in dielectric space, next door 260 is compared on the contrary when only having a resilient coating and is descended, and exists moving of gas flow to go up the problem that turbulent flow (turbulent flow) takes place.
Fig. 2 c is the cutaway view that the electrode structure in the illustrated plasma source 200 among Fig. 2 b is shown in detail.
Shown in Fig. 2 c, plasma electrode structure in the past is the electrode structure of the mode of the following stated, produces plasma in DBD (medium stops discharge) mode between the dielectric electrode of a pair of subtend that is:.After this, discharge reacting gas, and be in the object being treated of its underpart by excitation of plasma by the gas discharge outlet that is formed on one of them electrode.
Such plasma electrode structure forms upper electrode 223 and lower electrode 233, make it possible to top dielectric 220 and bottom dielectric 230 mutually towards the opposing face on surface apply high voltage source.
After the one side of above-mentioned top dielectric and bottom dielectric 220,230 forms the electrode 223,233 of metallic film form, need to cover the 1st and the 2nd protective film 224,234 that is used to protect above-mentioned metallic film.Why be because the patience of the bioactive molecule that metal pair is produced by plasma very a little less than.
In addition, can have the cooling device portion (not shown) that is contacted with the surface and cools off above-mentioned upper electrode 223, but above-mentioned cooling device portion can use the water-cooled structure that can make the cooling water circulation of supplying with from the outside, also can use the air-cooled type heating panel.
Yet, exist above-mentioned cooling device portion to be difficult for being provided with, the problem that rises according to the price that plasma source is set of above-mentioned cooling device portion.
Fig. 2 d is the amplification drawing of the bottom dielectric electrode that is formed with gas discharge outlet 231 in the illustrated electrode structure among Fig. 2 c.
Shown in Fig. 2 d, along the wall of bottom dielectric 230 discharge (face discharge).The face discharge that produce this moment is concentrated the 2nd diaphragm 234 of the electrode edge portion of damage thickness relative thin by the surface that the electrode of discharge takes place in high-octane active ion damage.
Thereby,, therefore, exist erosive velocity to quicken, the problem that sharply shorten electrode life because the diaphragm that the face discharge is followed corrodes and causes that electrode directly exposes under above-mentioned discharge thus.
On the other hand, turn to along with nearest LCD plate is large-scale 6,7 generations or on, handle the also corresponding maximization of FPD processing unit of operations such as cleanings, plating, for this reason, two dielectric parallel-plates also need maximization.
Yet, forming with large-scale dielectric parallel-plate under the situation of electrode, utilize bonding or bolt etc. in order to keep the interval between two electrodes, but this moment may be owing to thermal deformation produces stress.
This is the degree of ignoring under the situation of small-sized electrode structure, and to the distortion accumulation of length direction, therefore, the stress concentration phenomenon is serious in the electrode structure that maximizes, and the possibility of destroying dielectric insulation eventually uprises.
In addition, in use because a variety of causes the combination of the microscopic checks in dielectric aging or dielectric etc., the destruction that may insulate, and need to change the whole dielectric plate that insulation breakdown takes place this moment, therefore, it exists on the expense or constitutes the problem of wasting on the operation.
Summary of the invention
The present invention makes in order to solve the above problems, and purpose is to provide the uniformity that can improve plasma density, and the plasma electrode structure and the plasma source of the trend that maximizes applicable to nearest substrate.
In addition, purpose is to provide the face that prevents in electrode discharge, thereby, can improve the plasma electrode structure and the plasma source in the life-span of electrode.
In addition, the danger that purpose is to provide the generation that can eliminate high pressure to follow, the plasma treatment appts that can reduce the loss of time that the opening/closing action of plasma source causes.
To achieve the above object, plasma treatment appts in the embodiments of the invention, it is characterized in that, comprise: at the plasma source of substrate with to the power supplier of described plasma source supply power, the power inverter and the described plasma source integral type that will produce high pressure in described electrode feedway form with plasma spraying.
Other preferred embodiment, it is characterized in that, comprise: with plasma spraying at the plasma source of substrate, support described plasma source, and in the height adjusting portion of the height of described substrate adjusted plasma source, drive the drive division of described height adjusting portion and control the master control part of described drive division.
The plasma source of one embodiment of the present of invention is characterized in that, comprises: supply with port from the gas of outside supply gas; And gas distributor, it comprises with described gas supplies with inner space that port is connected and so that flows at least one the gas jetting hole that the length direction along top that the gas of described inner space is dispersed in inside, source keeps predetermined distance formation.
Other preferred embodiment is characterized in that, in plasma source, at configuration of the top of substrate and the identical a plurality of plasma sources of the size of described substrate.
Another other preferred embodiment, it is characterized in that, comprise: a pair of haplotype battery lead plate that is assembled with a plurality of units electrode unit, make the gas generation plasma discharge that flow into the plasma generation space that is formed between the described pair of electrodes plate, and the gas ion that produces is ejected on the object being treated.
In addition, it is characterized in that, described unit electrode unit is assembled according to the width of described object being treated.
In addition, it is characterized in that described unit electrode unit comprises: unit electrode plate, be formed on the electrode on the described unit electrode plate and be formed on the clearance groove of a side of described unit electrode plate.
Another other preferred embodiment, it is characterized in that, comprise: by pair of electrodes with evenly be formed on the plasma electrode that at least one the oxide film thereon layer on surface in the described pair of electrodes constitutes, make the gas generation plasma discharge that flow into the plasma generation space that is formed between the described pair of electrodes plate, and the gas ion that produces is ejected on the object being treated.
The plasma source of one embodiment of the present of invention is characterized in that, described pair of electrodes is separated by and plasma generation space that wherein forms and the oxide film thereon layer that evenly is formed on the surface of at least one in the described pair of electrodes.
According to another side of the present invention as can be known, provide a kind of plasma to produce manufacture method, it is characterized in that, utilize metal and form electrode itself, and evenly form oxide film thereon on the whole surface of described electrode with electrode.
In addition, provide a kind of plasma to produce the cooling means of using electrode, it is characterized in that, flow into the plasma that is formed between the described pair of electrodes plate and produce the gas generation plasma discharge in space and the gas ion that produces is ejected in the plasma processing method of object being treated making, to expose above described upper electrode whole under the operation gas that flows into, and, cool off described upper electrode by the heat exchange between operation gas and the upper electrode.
In addition, provide a kind of control method of plasma treatment appts, comprise:
(a) control plasma source the master control part gathering system have N/R information step,
(b) by in the information of described (a) collection step, judge whether be the anomaly that can have a direct impact described plasma source,
(c) according to the judged result of described (b) step, if not the anomaly that described plasma source is directly exerted an influence, then described master control part keep the open mode of described plasma source and be lifted to regulation height step and
(d), if the anomaly that can directly exert an influence to described plasma source, then close the step of described plasma source according to the judged result of described (b) step.
Description of drawings
Fig. 1 is the drawing that expression utilizes the cleaning device of general plasma source.
Fig. 2 a to Fig. 2 d is the drawing of illustrated plasma source in the presentation graphs 1.
Fig. 3 a to Fig. 3 b is the drawing of the plasma source processing unit of expression one embodiment of the present of invention.
Fig. 4 a to Fig. 4 b is expression other the drawing of plasma treatment appts of embodiment of the present invention.
Fig. 5 a to Fig. 5 c is the drawing of the plasma source of expression one embodiment of the present of invention.
Fig. 6 a to Fig. 6 d is expression other the drawing of plasma source of embodiment of the present invention.
Fig. 7 a to Fig. 7 c is the drawing of expression as unit (cell) the shape electrode structure of the plasma electrode structure of one embodiment of the present of invention.
Fig. 8 a is the drawing that the plasma in the haplotype electrode structure that illustrates among presentation graphs 7a to Fig. 7 c produces state, and Fig. 8 b is the drawing of the flow of the reacting gas ion of discharging by a plurality of bottom holes in the expression said units type electrode structure.
Fig. 9 a and Fig. 9 b are expression other the drawings of plasma electrode structure of embodiment of the present invention.
Figure 10 a to Figure 10 d be will illustrate among Fig. 9 a and Fig. 9 b the plasma electrode structure compare with plasma electrode structure in the past and represent the not drawing of generating plane discharge.
Figure 11 is the schematic sectional view that is suitable for the plasma electrode structure of electrode cooling means of the present invention.
Embodiment
Below, the drawing with reference to additional is elaborated to preferred embodiment of the present invention.
Shown in Fig. 3 a, plasma treatment appts of the present invention comprises to the substrates such as LCD glass as process object and sprays isoionic plasma source 331 and to the power supplier of above-mentioned plasma source 331 supply powers.
At this, power supplier is made of power inverter 332 that produces big high pressure and the control board 350 of controlling above-mentioned plasma source 331, be that above-mentioned power inverter 332 is isolated from power supplier in the present invention, and form one with above-mentioned plasma source 331.
That is be to connect between the power inverter 332 of plasma source 331 and generation high pressure, by high-voltage line 334.At this moment, because the danger to the outside is followed in the generation of high pressure, therefore, form the lid that covers plasma source 331, power inverter 332 and connect this high-voltage line 334.Above-mentioned lid makes and external discrete with the electron waves shielding material, can constitute one-piece type plasma source 330 with juncture.
In addition, one-piece type plasma source 330 can not form under the prerequisite of the high-voltage line 334 that connects plasma source 331 and power inverter 332, can be integrated with the form that power inverter 332 is built in plasma source 331.
In addition, the electron waves that the lid of one-piece type plasma source 330 is followed for the generation that not only can shield high pressure, and prevent from by the voltage that high-voltage line 334 applies surrounding environment to be caused noise, and form by metal material.
In addition, control board 350 separates with power inverter 332, and is therefore, general by 370 connections of domestic power supply line between above-mentioned power inverter 332 and the control board 350.At this moment, on said power 370, apply home-use 110V～220V voltage, therefore, human body is not caused any harm.
In addition, said power 370 is extending length as required, thereby, can suitably adjust and be used to be provided with the position of control board 350 and the configuration of said power 370.Like this, be provided with on the space unrestrictedly, therefore, when long-term the use, can enjoying the benefit on the space.
Fig. 3 b is the example that one-piece type plasma source 330 constitutes internally-arranged type, is the drawing of the connection status between one-piece type plasma source 330 of expression and the control board 350.
Shown in Fig. 3 b, when one-piece type plasma source 330 is connected with control board 350, have only power line 370 and sense line 360 to expose externally.
At this moment, be related to the control of one-piece type plasma source 330, may therefore, send very big heat because the magnitude of current of power line 370 is big by induction power.
Thereby, need to twine power line 370 and prevent security incidents such as electric leakage by shielding conductor (shielding line) 372.
At this, as shielding conductor 372, preferably, by flexible tube (flexible pipe) form of aluminium or SUS metal materials such as (Su Shigang) formation.
In addition, the sense line 360 of the state in induction plasma source 330 can be connected with control board 350.
Fig. 4 a and Fig. 4 b are the drawings of formation of the plasma treatment appts 400 of expression other embodiment of the present invention.
Shown in Fig. 4 a, the plasma treatment appts 400 of other embodiment of the present invention has: the transfer device of transferring with certain speed as the substrate 440 of process object, with aforesaid substrate 440 450 and spray isoionic plasma source 410 to the substrate of being transferred by above-mentioned transfer device 450 440.
In addition, have and be used to regulate the height adjusting portion 430 of above-mentioned plasma source 410 and be formed on the top of above-mentioned height adjusting portion 430 and the breach adjusting portion 420 that is used to regulate between substrate 440 and the plasma source 410 the fine breach that produces.
In addition, has the master control part 470 that is used to drive the operation afflux portion (manifold) 460 of height adjusting portion 230 and controls aforesaid operations afflux portion 460.
In addition, the height adjusting portion 430 that is used for plasma source 410 is raised to or is lowered to the height of regulation can be made of air pressure or hydraulic type cylinder, ball-screw (ball screw).
In addition, operation afflux portion 460 can drive above-mentioned height adjusting portion 430 by air pressure, oil pressure or mechanical type, electronic type.
At this, under the situation of air pressure or hydraulic type, operation afflux portion 460 is the drive divisions that are made of a plurality of electromagnetically operated valves, and drives height adjusting portion 430 by the mode of open/closed valve.
In addition, it is no abnormal that the transducer of the appropriate location of master control part 470 by making equipment attached to FPD etc. and sensory perceptual system have, and collect the information of the whole situation of equipment.
After this, find by acquisition of information any when unusual, judgement should be closed (off) plasma source 410, still should keep state and the operation height adjusting portion 430 of opening (on), plasma source 410 is lifted to the height that is unlikely to substrate 440 is caused the regulation of damage.
In atmospheric plasma processing unit 400 of the present invention,, then as described below if the control procedure of observing plasma source 410 when unusual takes place in FPD manufacturing process.
Under the situation that transfer device 450 stops, whether master control part 470 has N/R information (the 1st step) by gathering systems such as transducers.
After this, master control part 470 is by collected information, judges whether the anomaly that exerts an influence for direct article on plasma source, also is the reason (the 2nd step) in the unusual or manufacturing process of other unusual equipments of non-plasma source.
Afterwards, judged result, under the situation of the reason in the unusual or manufacturing process of other unusual equipments that is non-plasma source, master control part 470 makes substrate 440 rise to the height (the 3rd step) of regulation under the state of opening (on) plasma source 410.
Yet,, close plasma source 410 (the 4th step) for plasma source 410 if the anomaly that article on plasma 410 directly exerts an influence (for example, electric power system is unusual, supply gas unusual etc.) takes place.
After anomaly is eliminated, wait when moving ion source 410 once more, check the state of plasma source 410.At this moment, open under (on) state in the standby if be in, then reset (on-＞down) and behind the home position, begin operation, close under (off) state if be in, after then opening (on) plasma source 410, begin operation (the 5th step) behind the stabilizing take through regulation.
Temporal loss during FPD manufacturing process that the stabilizing take when like this, other the plasma treatment appts 400 of embodiment of the present invention can be eliminated opening/closing as the weakness of in the past plasma treatment appts causes.That is, can be simply by on the plasma source 410/drive down and avoid the uneven plasma of processed substrate to expose, simultaneously, can reduce the temporal loss that stabilisation is followed.
Fig. 4 b is expression other the drawing of an embodiment of height adjusting portion 430 of plasma treatment appts of embodiment of the present invention.
Shown in Fig. 4 b, above-mentioned height adjusting portion 430 has: the power conversion of the horizontal direction of stroke (stroke) reception and registration of cylinder 434 that the opening/closing by electromagnetically operated valve drives and length that will be by above-mentioned cylinder 434 is the voussoir (wedge block) 435 of vertical direction.
In addition, have: utilize energy to make the plasma source rising (up) of adhering to arrive loading part (1oad) 431 of the height of regulation by voussoir 435 conversions.
In addition, owing to the height that the two sides of plasma source is risen to regulation, therefore, above-mentioned cylinder 434, voussoir 435 and loading part 431 form a pair of of symmetry in two sides.
In addition, the central authorities in height adjusting portion 430 have: the identical connecting portion 432 of power that keeps left and right sides cylinder 434 to apply to voussoir 435 by long stroke.
In addition,, arrive identical height owing to can improve (up) at both sides loading part 431 make plasma source rise (up) during by connecting portion 432 to the height of regulation, therefore, the plasma source that the is lifted state of keeping in balance.
If it is observe the height adjustment process of the plasma treatment appts that constitutes like this, then as described below.
If the master control part of plasma treatment appts (not shown) is sent the order that plasma source is raised to the height of regulation under open mode, the operation afflux portion (not shown) that then obtains the order of master control part (not shown) will drive cylinder 434.
At this, operation afflux portion is the drive division that is made of a plurality of electromagnetically operated valves, and the mode by open/closed valve drives cylinder 434.
In addition, cylinder 434 is made of vapour-pressure type or hydraulic type cylinder 434, and if open valve and by air pressure or oil pressure actuated cylinder 434, then the linear running energy with cylinder 434 is communicated to voussoir 435 by stroke.
Afterwards, voussoir 435 utilizes the energy that is communicated to that the loading part 431 that is attached with plasma source is risen to about the height of regulation.
In addition, when plasma source is raise, keep connecting portion 432 identical to the power that voussoir 435 applies, make plasma source attached to left and right sides loading part 431 under the prerequisite that does not tilt, under the state of the height of regulation, keep in balance by the stroke of the length of both sides cylinder 434.
Below, the plasma source that constitutes above-mentioned plasma treatment appts is described.
Fig. 5 a to Fig. 5 c is the drawing of the plasma source 500 of expression one embodiment of the invention.
Fig. 5 a is the vertical view of the plasma source 500 of one embodiment of the invention, and Fig. 5 b is the stereogram of above-mentioned plasma source 500, and Fig. 5 c is the side sectional view of above-mentioned plasma source 500.
Shown in Fig. 5 a, supply with the side that port 500a is formed on above-mentioned plasma source 500 by the gas of gas supply device (not shown) supply gas.
This will be in the past 8 gases supply with ports and be reduced to 1 and reduce oxidizing gases pipe arrangement line.
Shown in Fig. 5 b and Fig. 5 c, the plasma source 500 of one embodiment of the invention is modes that medium stops discharge (DBD:Dielectric Barrier Discharge).
Above-mentioned plasma source 500 has: gas distributor (gas distributor) 510, described gas distributor 510 are used to make the gas that flows into by gas supply port to be evenly distributed on the inner space, source.
Above-mentioned gas distributor 510, its section are many those loop-shaped, are the flue form of hollow on the whole.
In addition, a side is supplied with port with gas and is connected, and gas flows into to hollow interior space.
In addition, on the top of outer peripheral face, keep the compartment of terrain to form a plurality of gas jetting holes 511 at length direction.
In addition, the diameter of above-mentioned gas spray-hole 511 is in 1～10mm scope, and the uniformity in order to keep the plasma source gas inside to distribute, the diameter of above-mentioned gas spray-hole is 5mm preferably.
If it is observe the gas flow (flow) that flows into by above-mentioned gas distributor 510, then as described below.
At first, supplying with the hollow bulb that gas that port flows into flow into gas distributor 510 by gas is the inner space.At this moment, flow into the gas of inner space of above-mentioned gas distributor 510 as flowing into inner space, source 550 by a plurality of gas jetting holes 511 from fountain water spray.
Therefore this, compare in the past because the effect of resilient coating is played in inner space, whole source 550, can increase the amount of the gas that flow into inner space, source 550.
In addition, owing to can push top dielectric 520 sides to the gas that will flow into gas distributor 510 than bigger in the past pressure, therefore, above-mentioned gas can have inhomogeneity distribution, is directed flowing into dielectric space, next door 560.
At this moment, flow into the inflow entrance 521,522 of gas by on top dielectric 520, forming of inner space, source 550, flow in the dielectric space, next door 560.
Afterwards, if on being formed on/on the bottom dielectric 520,530 on/lower electrode (not shown) applies voltage, then flow into the gas generation plasma reaction in dielectric space, next door 560, and the dielectric hole, a plurality of bottom of the bottom surfaces of the oxygen base that produces by being formed on bottom dielectric 530 or gap (slit) 531 are to the main body external discharge of plasma source 500 from plasma reaction.
In addition, being discharged into outside oxygen base is ejected into as the surface of the substrate 570 of cleaning object and eliminates the organic substance 580 on substrate 57 surfaces.
Thereby, improve the uniformity of the density of source gas inside, flow the cleaning efficiency of the plasma source that can maximize with laminar flow (laminar flow) guiding gas fluid before plasma produces.
Fig. 6 a to Fig. 6 d is expression other the drawing of plasma source 600 of embodiment of the present invention.
Shown in Fig. 6 a, other the plasma source 600 of embodiment of the present invention dispose the oxygen base (O radical) that will from reaction, produce on the jet surface of substrate 640/bottom 2 plasma source 610a, 610b.
At this, plasma source 600 can be configured to stagger mutually on the direction of advance of aforesaid substrate 640 (laterally), and on the direction (vertically) outside the advancing of aforesaid substrate 640 can with the ground configuration and constitute the grid form side by side mutually that coincide of the size of aforesaid substrate.
Vertically be set up in parallel in addition ,/when bottom 2 plasma source 610a, 610b, the whole vertical extension of plasma source 610a, the 610b of 2 rectangle forms is at least more than the vertical extension of substrate 640.
Why be because turn to along with the LCD plate is large-scale 6,7 generations or on, and also corresponding its maximization that becomes of plasma source, and do not need to make large-scale plasma source this moment, just can a plurality of existing sizes of portrait configuration or small-sized plasma source and obtain identical effect.
In addition, by on laterally staggering mutually/bottom 2 plasma source 610a, 610b, can eliminate four angular zones of the simple vertical fine gap space that produces when arranging in the mode of block form.
In addition, for make above-mentioned on/ bottom plasma source 610a, 610b and atmosphere separate, and has to be equipped with the atmosphere shielded box 620 around whole above-mentioned plasma source 610a, 610b.
In addition so that become easier attached to the surface treatments such as organic cleaning of substrate 640, the heater (not shown) of heating aforesaid substrate 640 can be formed on above-mentioned on/side of bottom plasma source 610a, 610b.
The quantity of the plasma source that illustrated other plasma source of the present invention can be by changing configuration among Fig. 6 a or the simple mode of shape are carried out various distortion.
Fig. 6 b to Fig. 6 d is the concrete example to this, and will with the difference of the plasma source that illustrates among Fig. 6 a emphasis as an illustration.
Fig. 6 b is that 2 plasma sources of illustrated being arranged on/bottom constitute the mode that repeats again once among Fig. 6 a.
That is, 4 plasma source 610a, 610b, 610c, 610d can be made of the following stated, that is: dispose side by side mutually on vertical, and be the grid that staggers mutually in the horizontal.
In addition, when vertically being set up in parallel 4 plasma source 610a, 610b, 610c, 610d in the plane, plasma source 610a, the 610b of 4 rectangle forms, the whole vertical extension of 610c, 610d are at least more than the vertical extension of substrate 640.
Fig. 6 c with grid mode multiple configuration illustrated 4 plasma sources among Fig. 6 b, be a formation that enlarges the irradiated area of plasma source.
That is, 8 600a, 600b, 600c, 600d, 600e, 600f, 600g, 600h can constitute the grid system of configuration that staggers mutually on the whole irradiated area to substrate 640.
As mentioned above, dispose a plurality of only vertical little plasma sources of size, thereby, need and not using under the prerequisite of a large-scale plasma source, respond actively at the maximization of substrate tendency.
In addition, if a plurality of plasma sources of grid system multiple configuration to stagger then can be transferred fireballing situation to substrate 640 and also fully eliminate organic substance.
In addition, increase the quantity of the plasma source that is constituted more, can on substrate 640, produce uniform plasma and surface treatments such as the cleaning that maximizes more.
Fig. 6 d such as Fig. 6 b, have in the identical formation that vertically disposes 4 plasma source 610a, 610b, 610c, 610d in the grid mode, to vertical expansion, and its end face is deformed into foursquare structure from the past rectangle but difference is the size of 4 plasma source 610a, 610b, 610c, 610d replaced laterally.
This is to produce even and stable plasma, and increases another other the mode of the formation of plasma irradiated area.
Below, describe using plasma electrode structure at above-mentioned plasma source.
Fig. 7 a to Fig. 7 c is the plasma electrode structure of one embodiment of the invention, is the drawing of expression unit (cell) type electrode structure 720.
Usually, plasma source uses the electrode structure of DBD type, and the electrode structure of above-mentioned DBD type can form in horizontal or vertical parallel subtend plate mode.
Shown in Fig. 7 a, unit electrode unit 710 has: unit electrode plate 711, be formed on the electrode 712 on the above-mentioned unit electrode plate 711 and be formed on the clearance groove 713 of a side of above-mentioned unit electrode plate 711.
At this, unit electrode plate 711 is the thin plate forms with the thickness about 0.1mm～3mm, and has the form of the parallelogram that tilts with oblique line.At this moment, the inclination angle is the angle between 0～90 °, preferably, and the angular range between 30～45 °.
In addition, with the shape of unit electrode plate 711 parallelogram of having given an example, even but as triangle substrate and inverted triangle substrate in the horizontal mode of configuration etc. side by side alternately, can be deformed into non-parallel tetragonal other shape.
In addition, the unit electrode plate 711 main dielectric plates that use, its material can be used the pottery of silicon dioxide, aluminium oxide, zirconium dioxide, titanium dioxide, yittrium oxide etc.
In addition, the metal that electrode 712 can conductibility such as coating silver, copper, aluminium be good on unit electrode plate 711 and forming.At this moment, for the edge effect (edge effect) that minimizes electrode 712, preferably, form on the surface of unit electrode plate 711 concavo-convex, and at recessed coated inside.
In addition, corroded by reactant gas in order to prevent electrode 712, preferably, the diaphragm coating of character that will have acid resistance, anti-isoiony is on above-mentioned electrode 712.
Side in above-mentioned unit electrode plate 711 has formed clearance groove 713.At this moment, the clearance groove that is formed on the parallel-plate of a side plays a role as inflow entrance, and the clearance groove that is formed on the parallel-plate of opposite side plays a role as the outlet of discharging the reacting gas ion that forms in dividing plate dielectric space.
Fig. 7 b is an illustrated unit electrode unit 710 and form the drawing of an embodiment of haplotype battery lead plate 720 of the present invention among the expression Pareto diagram 7a.
Shown in Fig. 7 b, haplotype battery lead plate 720 of the present invention is to be the aggregate of the horizontal unit electrode unit 710 that disposes illustrated little unit electrode unit 710 among a plurality of Fig. 7 a side by side and form of direction of advance of substrate along object being treated.
In addition, unit electrode plate 710 is configuration side by side laterally, and simultaneously, the unit electrode unit 710 that forms by clearance groove 713 subtends forms groove, thereby, form a plurality of reacting gas inflow entrances.
The haplotype battery lead plate 720 of the present invention of Gou Chenging is the aggregate of little unit electrode unit 710 as described above, therefore, do not need to make the large size ceramic plate, the mode of the number that the size variation of unit electrode unit 710 control substrates is arranged just can adapt to the trend of the maximization of substrate simply.
Fig. 7 c is the drawing that illustrated haplotype battery lead plate of the present invention embodies an embodiment who is horizontal parallel type DBD type among the presentation graphs 7b.
Shown in Fig. 7 c, the plasma source 700 with haplotype electrode structure of the present invention disposes the haplotype battery lead plate shown in Fig. 7 b in the horizontal subtend in top and the bottom.
That is, above-mentioned upper electrode plate 720 and lower electrode plate 740 are configured to the mutual subtend of the state of mutual horizontal parallel, and the part that still forms electrode is each other back to the structure that disposes.
In addition, upper electrode plate 720 and lower electrode plate 750 are made of the aggregate of illustrated unit electrode unit 710,740 among Fig. 7 a.
In addition, the above-mentioned elementary cell unit structure of bottom is that the unit electrode unit is different with top, disposes continuously with the form of turning over.
That is, the unit electrode unit 710 on top has: have the shape of the parallelogram that tilts with oblique line top unit electrode plate 711, be formed on the upper electrode 712 on the above-mentioned top unit electrode plate 711 and be formed on the upper gap groove 713 of a side of above-mentioned top unit electrode plate 711.
In addition, the unit electrode unit 740 of bottom has: top unit electrode plate 711 with the form of upset towards the bottom of bottom surfaces unit electrode plate 741, be formed on the lower electrode 742 on the above-mentioned bottom unit electrode plate 741 and be formed on the underclearance groove 743 of a side of above-mentioned bottom unit electrode plate 741.
In addition, in order to keep the interval between top unit electrode plate 711 and the bottom unit electrode plate 741, embed precision machined partition to the centre.
In addition, the top of upper electrode 712 can have: make the gas flow uniforming device that is evenly distributed on the length direction of battery lead plate from the gas of haplotype electrode structure inflow.At this moment, the gas flow uniforming device can utilize the form of overlapping porous plate of multilayer or made from porous material etc.
In addition, a plurality of units electrode unit 710 that forms upper gap groove 713 interconnects and forms upper slot 714.At this moment, above-mentioned upper slot 714 can be used as from the inflow entrance of gas supply device gas supplied and plays a role.
In addition, under the situation of lower channel 743, also form lower channel 744 in the mode identical with top.At this moment, above-mentioned lower channel 744 plays a role to the outlet that substrate sprays as the reacting gas ion that makes dielectric space, the next door generation that forms by two parallel-plates.
On the other hand, keep predetermined distance and form underclearance groove 743 with upper gap groove 713, and stagger mutually configuration upper slot 714 and lower channel 744 are not leaked the gas that flows into by upper slot 714 from lower channel 744.
Thereby the gas that flows into by upper slot 714 is through between two electrodes, and through plasma discharge, and spray by lower channel 744.
In addition, a plurality of lower channel 744 are favoured the gap morphology configuration of oblique line of the direction of advance of aforesaid substrate, thereby, the uniformity of the plasma treatment performance in the substrate of inline processed can be improved.
In addition, when applying voltage, be connected energising between 712 of a plurality of upper electrodes and the upper electrode, under the situation of a plurality of lower electrodes 742, only with between the lower electrode be connected energising too for plasma discharge.
Fig. 8 a is the drawing that the plasma in the haplotype electrode structure that illustrates among the presentation graphs 7a to 7c produces state, and Fig. 8 b is the drawing of expression by the flow of the reacting gas ion of a plurality of lower channel discharges in the said units electrode structure.
Shown in Fig. 8 a and Fig. 8 b, if the lower channel that gas is discharged from is made as the gap of very little seam, the pressure of length direction that then can keep being applied to electrode is certain.Thereby, can keep roughly the same from the isoionic flow of each lower channel injection, this can keep the uniformity of the flow of plasma discharge on the whole length direction of electrode.
In addition, each flow is in the central part maximum of lower channel, and weak more the closer to the end parts of lower channel.But if a plurality of lower channel are constituted the gap morphology that favours the direction of advance of substrate with oblique line, then the two ends of the lower channel of adjacency overlap each other, and therefore, may lose the isoionic inhomogeneities of spraying from each lower channel.
That is,, therefore, can guarantee the uniformity of the isoionic density of all injections because the end parts of lower channel adjacent to each other is overlapping.
Fig. 9 a and Fig. 9 b are expression other the drawings of plasma electrode structure 800 of embodiment of the present invention.
Shown in Fig. 9 a, be used to form isoionic high frequency electric source in order to apply, other the plasma electrode structure 800 of embodiment of the present invention has in top and the bottom: the plate shaped upper electrode 811 of subtend parallel to each other and lower electrode 821.
In addition, form uniform oxide film thereon (membrance) layer 810,820 respectively on the whole surface of upper electrode 811 and lower electrode 821, between above-mentioned upper electrode and lower electrode, form plasma and produce space 830.
In addition, form the gas inflow entrance (not shown) that makes processing gas inflow plasma generation space 830 in order to produce plasma.The above-mentioned gas inflow entrance can be formed on electrode or be formed on the sidepiece that above-mentioned plasma produces the space.
In addition, if above-mentioned electrode 811 is applied alternating voltage, the processing gas that then flow into plasma generation space 830 is excited and carries out plasma reaction.At this moment, so that the processing gas ion that is excited (cation, electronics, foundation etc.) is injected into object being treated (glass, semiconductor wafer etc.), the gas discharge outlet 823 of more than one hole (hole) or gap morphology runs through lower electrode 821 and oxide film thereon layer 820 and forms.
On the other hand, be to utilize pottery to form the dielectric next door in the past, and formed the metal electrode film on its surface, by on above-mentioned electrode film once more the method for covered with protective film form the plasma electrode structure.
But, in the present invention, form two electrodes of upper electrode 811 and lower electrode 821, form the gas discharge outlet 823 that runs through above-mentioned lower electrode.
Afterwards, utilize anodic oxidation coating forming method (Anodizing) to form oxide film thereon layer 810,820 on the whole surface of two electrodes 811,821.
In addition, shown in Fig. 9 a, on upper electrode 811 and lower electrode 821, all form oxide film thereon layer 810,820, but can be only form the oxide film thereon layer on therein the electrode, especially can be only form the oxide film thereon layers and use at the lower electrode 821 of the generating plane discharge of the medial surface of gas discharge outlet 823.
In addition, upper electrode 811 and lower electrode 821 are main to use aluminium alloys, but can use surface energy natural or artificially form the alloy of oxide film thereon.
Suppose that titanium (Ti), magnesium (Mg), zinc (Zn), tantalum (Ta) etc. are corresponding therewith.
In addition, the oxide film thereon layer that forms by above-mentioned anodic oxidation coating forming method is aluminium oxide (Al 2O 3) crystallization, this is the material of applying flexibly as the dielectric of DBD electrode such as aluminium usually.Outside, can use titanium oxide, magnesium oxide (Mgo), zinc oxide (ZnO), tantalum oxide etc.
Thereby; above-mentioned oxide film thereon layer itself can be used as dielectric and plays a role; because the oxide film thereon layer itself has superior corrosion resistance and anti-isoiony; therefore; film does not separately need protection; thereby, also play a role as the upper electrode 811 of the above-mentioned aluminium alloy form of protection and the diaphragm of lower electrode 821.
In addition, the anodic oxidation coating forming method is that aluminum alloy anode is completely infused in the electrolyte, utilizes electrolysis, forms the oxide film thereon layer on the whole surface of above-mentioned electrode.
Thereby no matter how complicated the shape of electrode is, also can form uniform oxide film thereon layer on the whole surface of above-mentioned electrode.
That is, form flat portions and the gas discharge outlet of the oxide film thereon layer of identical thickness until electrode.
In addition,, but do not limit therewith, can use the various metals that can form the oxide film thereon layer by the anodic oxidation coating forming method as the above-mentioned metal electrode aluminium alloy of having given an example.
In addition, the oxide film thereon layer is except aluminium oxide, and the oxide film thereon layer of the metal of applying flexibly as above-mentioned metal electrode also can use.
Fig. 9 b is formed with the oxide film thereon layer of gas discharge outlet 823 and the amplification drawing of lower electrode in the illustrated electrode structure among Fig. 9 a.
Shown in Fig. 9 b, when DBD discharges, the accumulation of other utmost points forms electric field at the surface of oxide film thereon layer 820 and basalis, but by the oxide film thereon layer 820 that the whole surface at lower electrode 821 evenly forms, electric field can not be formed by air layer.
In addition, lower electrode 821 is not to be the form of existing metallic film (4～20 μ m), but bucket (bulk) state (1～5mm) aluminum alloy anode, therefore, do not take place as in the existing metallic film in the electric field effect of edge part, the intensive phenomenon of electric field does not take place yet.
Owing to can fundamentally prevent like this, the surperficial generating plane discharge of lower electrode 821.
Figure 10 a to Figure 10 d be will illustrate among Fig. 9 a and Fig. 9 b the plasma electrode structure compare with in the past plasma electrode structure and drawing that the presentation surface discharge does not take place.
Figure 10 a represents the initial condition that other the plasma electrode of embodiment of the present invention forms.
In addition, Figure 10 b represents that plasma continuous discharge effluxion is after 100 hours, different with plasma electrode structure (with reference to Figure 10 c and Figure 10 d) in the past near circle (gas discharge outlet), oxide film thereon layer and electrode are not produced the infringement phenomenon, and identical with the initial condition of Figure 10 a.
Figure 11 is the schematic sectional view for the plasma electrode structure that is suitable for electrode cooling means of the present invention.
Generally, the abnormal temperature of electrode is 20 to 150 ℃, under the situation more than 150 ℃, take place because thermal expansion and the damage of plasma module, or temperature rises and problem such as cleaning object is impaired.
Thereby the present invention as shown in figure 11, makes the inflow entrance of operation gas be positioned at the top of upper electrode 911.At this moment, the low relatively operation gas of temperature is through above the above-mentioned upper electrode 911, and can cool off above-mentioned upper electrode 911, thereby, keep the cleaning temperature of above-mentioned upper electrode 911.
Especially, the influx of above-mentioned operation gas is supplied with suitable amount according to the area of processed substrate 970, thus, when can realize utilizing operations such as isoionic cleaning, can prevent that above-mentioned upper electrode 911 is overheated.
The influx of such operation gas was increased by the area of the substrate 970 of plasma treatment big more needs more, described in detail in the following embodiments according to the influx of the operation gas of the area of its substrate.
Above-mentioned operation gas mainly can use N 2Gas, O 2The air of gas or purification also can use Ar, Ne, Xe or He.
(being suitable for routine 1:5) for substrate
Generally, distinguish generation according to the area of the substrate in the manufacturing that is used in display unit, 5 generation its area of substrate be 1,100mm * 1,200mm.
Processing area relatively little 5 generation substrate plasma source be to flow into 250 to 600LPM operation gas, thereby, can prevent the overheated of isoionic generation and upper electrode 911.
As described above 250 to 600LPM operation gas is flow into upper electrode 911 above, can prevent the overheated of upper electrode 911.
In addition, the operation gas of this inflow gas inflow entrance by top insulator 910 again flow into dielectric space, next door between top insulator 910 and the lower isolator 920, and produces plasma by the potential difference of upper electrode 911 and lower electrode 921.
The plasma of Chan Shenging is ejected into substrate, treatment substrate by the plasma jet inlet that is provided in lower electrode 921 and lower electrode 920 like this.
(being suitable for routine 2:7) for substrate
For make display unit 7 generation substrate area be 1,870mm * 2,200mm or 1,950mm * 2,250mm, for the size of the plasma source of handling such plasma treatment 7 generation substrate, bigger than the plasma source of the processing 5 generation substrate in the above-mentioned suitable example 1.
When handling so bigger substrate, prevent the bigger overheated of upper electrode 911, need to increase the flow of operation gas, 7 generation substrate situation under, the flow of operation gas is made as 600 to 1000LPM.
In the scope of the operation gas of above-mentioned definition, can carry out preferred plasma treatment and prevent the overheated of upper electrode 911.
(being suitable for routine 3:8) for substrate
For make display unit 8 generation substrate area be 2,160mm * 2,460mm.
For handle large tracts of landization 8 generation substrate its size of plasma source compare the plasma source of the processing 7 generation substrate in the above-mentioned suitable example 2, bigger, need can to prevent from and then increase the overheated of the plasma treatment of flow of operation gas and upper electrode 911.
Flow into to handle 8 generation substrate the flow of operation gas of plasma treatment appts when being 800 to 1400LPM, can prevent the overheated of the plasma treatment of wishing and upper electrode 11.
(being suitable for routine 4:9) for substrate
9 generation substrate be the large tracts of land of 2400mm * 2800mm, for the plasma source of handling this substrate the compare processing plasma source of the substrate in generation in the past, bigger in 9 generation.
For handle when the upper electrode 911 that keeps such plasma source is in 20 to 150 ℃ of scopes 9 generation substrate, with so that the flow of the operation gas that flows into through the top of this upper electrode 911 is made as 800 to 1800LPM.
As above as can be known, plasma electrode of the present invention structure not only can use at plasma source, and can use and be the electrode structure in the device of the variety of way of plasma discharge.
In addition, plasma source of the present invention and utilize this surface processing device mainly to use LCD glass as substrate, but be not limited thereto, on display panel used large substrates such as OLED, PDP, can be suitable for.
In addition, plasma treatment appts of the present invention can be useful in semiconductor, FPD (the Flat Panel Display) manufacturing installation of variety of ways such as utilizing isoionic cleaning device, electroplanting device, Etaching device.
In addition, also can be useful in the surface processing device of variety of ways such as synthesizing of metal or high molecular surface treatment, novel substance.
Thereby, the invention is not restricted to above-mentioned suitable example, even the technical staff with common knowledge in present technique field carries out design alteration in the scope that does not break away from technological thought of the present invention, also belong in the scope of the present invention.
(effect of invention)
As mentioned above, plasma treatment appts of the present invention will produce high pressure and dangerous big power converter part is separated from power supplier, and separated power converter and plasma source is integrated.
Thus, can eliminate that electron waves shieldings and high-voltage line expose environment externally and danger that electric shock accidents, fire incident etc. take place prevent that the high pressure that is applied to plasma source from producing noise, thereby the stabilisation in article on plasma source also plays contribution function.
In other preferred embodiments, owing to generally by power line one-piece type plasma source is connected with control panel, therefore, not only can improves stability, and improve spatial benefit in the setting of control panel and the configuration of power line.
In addition, have or not unusually in the induction whole system, and anomaly is when taking place, if this phenomenon is the phenomenon that has a direct impact of article on plasma source not, then be not related to and close when stating plasma source and staying open state, above-mentioned plasma source is lifted to specified altitude.
Thus, the temporal loss that the action of the opening/closing of the plasma source when reducing FPD manufacturing process causes, its result can improve the productivity of manufacturing process.
In addition, even stay open state, also the position with plasma source rises to not to the surperficial ashing (over ashing) of processed substrate or the height of face coat material injury, therefore, can prevent the bad of processed substrate.
In addition, owing to rise to the height of regulation, therefore, when the operation gas flow, do not cause stagnation behavior, thereby, life-span that can plasma treatment appts.
On the other hand, plasma source of the present invention thus, is compared the side of 1 gas supply side interruption-forming at plasma source in the past, can access simplification and the apparent aesthetic feeling of gas pipe arrangement line.
In addition, owing to have gas distributor, compare in the past, not only can increase the amount of the gas that flow into the inner space, source, and push the gas that is flowed into to the plasma generating unit with bigger pressure, wherein, described gas distributor has the drum of hollow, has at an upper portion thereof a plurality of gas jetting holes.
Thereby, prevent the turbulent flow (turbulent flow) of the gaseous fluid that the inside at plasma source in existing mode takes place, mode with laminar flow (laminar flow) before producing plasma guides flowing of gaseous fluid, can improve the uniformity of the gas density of inside, source.
Other preferred embodiment is the trend that the nearest substrate of reply maximizes, and is equipped with undersized a plurality of plasma source, rather than coincide that to process object be the size of substrate and be equipped with a large-scale plasma source.
Thus, can overcome when making difficulty that a large-scale plasma source causes and restriction, can bring into play and use an effect that large-scale plasma source is identical.
In addition, the contrast cleaning object is that the big or small clathrate of substrate disposes a plurality of plasma sources, thereby, compare when using a large-scale plasma source, can produce more uniform stable plasma.
In addition, a plurality of plasma sources of multiple configuration clathrate configuration also can fully be eliminated organic matter to fireballing base plate transfer speed.
In addition, in order to enlarge the plasma irradiated area, with the vertical expansion of the size of plasma source, rather than horizontal expansion, or pass through to consist of the surface treatment effect that maximizes in the configuration of small size increase plasma source.
On the other hand, plasma electrode structure of the present invention can consist of by the size that simply the unit electrode unit the is contrasted processed substrate mode that disposes arranged side by side.
Thus, the trend that only maximizes according to substrate, the arrangement number that changes above-mentioned unit electrode unit get final product, therefore, does not substantially need to make large size ceramic, can elasticity tackles the variation of size of substrate.
In addition, even because the microscopic checks in ceramic post sintering and the operation, or the reason of internal voids etc. is in the textural generation defective of plasma electrode, also as long as change the unit electrode unit, therefore, do not need as in the past, to change whole dielectric parallel-plate, thereby, can reduce epoch-makingly and keep maintenance cost.
In addition, when manufacturing cell's property electrode structure, not only by processing and manufacturing, and can utilize mould etc. stably to produce in a large number, therefore, can reduce manufacturing expense.
In addition, the structure stable aspect on, the thermal deformation that produces when plasma discharge is the unit's of being limited in electrode unit also, do not accumulate with whole unit type electrode structure, therefore, no matter how big the size of electrode becomes, and also can minimize the problem that thermal deformation causes.
In addition, can elimination be ejected into the isoionic inhomogeneities of substrate by utilizing the gas discharge outlet of arranging with the oblique line form along the direction of advance of substrate.
Especially, can in the operations such as PR ashing of the glass of built-in processing, guarantee the uniformity of plasma treatment performance.
Other preferred embodiment can form the oxide film thereon layer on the surface of electrode, makes above-mentioned oxide film thereon layer itself play the effect of dielectric and diaphragm.
That is, with inequality in the past,, therefore, naturally oversimplify the generation operation of electrode, and have the effect that reduces the manufacturing unit price epoch-makingly owing to can eliminate the operation of formation metallic film on the pottery of high price and the operation of coating protection cuticula.
In addition, owing to use the aluminum alloy anode of tubbiness attitude,, therefore, can prevent the generation of face discharge, and can prolong the life-span of electrode by the oxide film thereon layer of anodic oxidation coating forming method formation homogeneous thickness.
Even electrode cooling means of the present invention is not used cooling device separately, also can the electrode that be applied with the plasma treatment appts of high pressure be cooled to suitable temperature by regulating the inflow direction and the flow of operation gas.
Thus, have simplification equipment, and the facilitation effect of keeping and managing.
In addition, be easy to expansion electrode, have the effect of the autgmentability that improves device.
Meanwhile, the present invention improves the temperature of operation gas, and can easily make plasma with the operation gas of this high temperature by the heat exchange cooling electrode between operation gas and the electrode time, has the effect of the efficient that improves plasma treatment appts.

Claims (6)

1. a plasma treatment appts is characterized in that, comprising:
Supply with the inner space that port flows into operation gas by gas;
Across at interval a plurality of gas jetting holes being set, and the operation gas that will flow into described inner space is dispersed in the gas distributor in plasma generation space along the length direction of outer peripheral face, and described gas distributor is hollow tubular; With
Substrate is carried out the upper electrode and the lower electrode of plasma treatment by making the operation gas that flows into described plasma generation space carry out plasma discharge.
2. plasma treatment appts as claimed in claim 1 is characterized in that,
On described lower electrode, be formed with a plurality of holes that the plasma that formed by described plasma discharge is passed through.
3. plasma treatment appts as claimed in claim 1 is characterized in that,
On described lower electrode, be formed with at least one groove that the plasma that formed by described plasma discharge is passed through.
4. plasma treatment appts as claimed in claim 1 is characterized in that,
The upper surface integral body of described upper electrode is exposed at by described gas distributor and flows in the operation gas in described plasma generation space.
5. plasma treatment appts as claimed in claim 1 is characterized in that,
Described upper electrode is cooled by the heat exchange between described operation gas and the described upper electrode.
6. plasma treatment appts as claimed in claim 1 is characterized in that,
The flow of described operation gas and the area of described substrate are proportional.
CN2005101253060A 2004-11-15 2005-11-15 Plama treatment device Expired - Fee Related CN1777346B (en)

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KR1020040092903A KR20060047072A (en) 2004-11-15 2004-11-15 Surface treatment system for substrate using plasma source
KR1020040092904A KR101071429B1 (en) 2004-11-15 2004-11-15 plasma source
KR1020040115329A KR20060075949A (en) 2004-12-29 2004-12-29 Plasma apparatus
KR10-2004-0115329 2004-12-29
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KR1020040114723A KR20060076333A (en) 2004-12-29 2004-12-29 Atmospheric pressure plasma apparatus and method for controlling the same
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KR1020050046225A KR101195137B1 (en) 2005-05-31 2005-05-31 Cell type electrode structure and atmospheric pressure plasma apparatus using it
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KR1020050073542A KR100773725B1 (en) 2005-08-11 2005-08-11 Method to cooling electrode of cleaning device for large area substrate
KR10-2005-0076654 2005-08-22
KR1020050076654A KR100541867B1 (en) 2005-08-22 2005-08-22 Manufacturing method of electrode for atmospheric pressure plasma and electrode structure and atmospheric pressure plasma apparatus using it
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CN102896114A (en) * 2011-07-26 2013-01-30 中国科学院微电子研究所 Novel normal-pressure double-medium blocking flat-opening type active free radical cleaning equipment
CN102921675B (en) * 2011-08-10 2017-01-25 中国科学院微电子研究所 Novel large-area discharge normal-pressure plasma free radical cleaning spray gun
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CN112867219B (en) * 2021-03-01 2024-09-03 中国空气动力研究与发展中心空天技术研究所 Underwater pulse discharge plasma exciter and flow control method

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