CN1760743A - Etching composition of thin-film transistor LCD - Google Patents

Etching composition of thin-film transistor LCD Download PDF

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CN1760743A
CN1760743A CNA2005101128499A CN200510112849A CN1760743A CN 1760743 A CN1760743 A CN 1760743A CN A2005101128499 A CNA2005101128499 A CN A2005101128499A CN 200510112849 A CN200510112849 A CN 200510112849A CN 1760743 A CN1760743 A CN 1760743A
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film transistor
film
etch combination
lcd
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CN100470345C (en
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李骐范
曺三永
申贤哲
金南绪
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Dongjin Semichem Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • ing And Chemical Polishing (AREA)
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Abstract

The invention relates to etching composition of thin-film transistor LCD device, especially relates to the etching composition containing nitric acid, acetic acid, villaumite, phosphate and water. The composition allows implementing wet-type etching on grid wiring material Mo/Al-Nd duplex film which constitutes TFT and ITO of pixel electrodes of the thin-film transistor LCD by single procedure in a manner that lower film Al-Nd does not generate undercut phenomena, so that good taper shape can be obtained, and at the same time, source/drain wiring material Mo single film can forms good configuration.

Description

The etch combination of Thin Film Transistor-LCD
Technical field
The present invention relates to the etch combination of Thin Film Transistor-LCD, more particularly, relate to following etch combination, by the mode of using described composition to adopt single operation promptly can the following film Al-Nd of portion not produce undercut phenomenon pixel electrode noncrystalline transparent metal film and the gate wirings material Mo/Al-Nd duplex film that constitutes TFT (thin film transistor (TFT)) in the Thin Film Transistor-LCD (TFT LCD) carried out Wet-type etching, and can obtain excellent taper, the single film of source/drain wiring material Mo also can form excellent profile (profile) simultaneously.
Background technology
Etching work procedure is the process that forms extremely fine circuit on substrate, and the same metal pattern of photoresist pattern that forms and form by the video picture operation.
Etching work procedure roughly is divided into Wet-type etching and dry-etching according to its mode, and Wet-type etching is to utilize reaction such as sour serial chemical reagent and metal and with its corrosion, with the part stripping beyond the photoresist pattern; Dry-etching is a metal of removing the extending part by speeding-up ion, thereby forms pattern.
Dry-etching is compared the advantage that has with Wet-type etching, have anisotropy profile, etching control power excellence.But the problem of existence is to install costliness, be difficult to large tracts of landization, also reduce owing to etching speed makes throughput rate slowly.
On the contrary, Wet-type etching is compared the advantage that has and is with dry-etching, can a large amount of and large-scale processing, throughput rate height, device are cheap because etching speed is fast.But the problem of existence is, etchant and the pure water use amount is many, waste liquid amount is many.
When carrying out dry-etching, in order to remove the partly solidified photoresist on surface, generally can append the plasma ashing operation, become the main cause of device price, activity time loss isoproductivity reduction and the reduction of goods competitive power, therefore, in fact mainly use Wet-type etching in actual field.
And the etchant that is used for Wet-type etching can specifically be suitable for according to the desired item of more accurate fine circuits, the kind that will carry out etched metal.
As an example, for the etchant of the single film of etching Al, following patent documentation 1 and patent documentation 2 are arranged, the etchant that is made of phosphoric acid, nitric acid, acetic acid, surfactant and water is wherein disclosed.
Following patent documentation 1 discloses the etchant that is used for etching Al-Nd film, and it is surfactant that described etchant contains phosphoric acid, nitric acid, acetic acid, water and fluorine carbon; Following patent documentation 3 discloses the etchant that is used for etching aluminium and ITO (indium tin oxide), and the acid that described etchant contains oxalic acid and the pH regulator of composition can be become 3 weight %～4.5 also contains hydrochloric acid, phosphoric acid, nitric acid; Following patent documentation 4 discloses the distribution etching solution that is used for etching silver or silver alloy, and described distribution contains phosphoric acid, nitric acid, acetic acid and sulfuric acid oxygen potassium with etching solution; Following patent documentation 5 discloses the etchant that is used for etching IZO (indium-zinc oxide), and described etchant contains hydrochloric acid, acetic acid, inhibitor and water.
In addition, following patent documentation 6 discloses and has been used for etching source electrode and the etchant of drain electrode with Mo or Mo-W (alloy of molybdenum and tungsten), and described etchant contains phosphoric acid, nitric acid, acetic acid, oxidation correctives and water.
But above-mentioned etchant in the past is owing to be only applicable to a kind of metal film of etching, and therefore the efficiency aspect of device and operation is relatively poor.Given this, the composition that a plurality of metal films of etching are simultaneously used is studied.
As an example, following patent documentation 7 and following patent documentation 8 disclose the etching solution that is used for etching Mo/Al or Mo/Al-Nd, Mo-W/Al-Nd duplex film, and described etching solution contains phosphoric acid, nitric acid, acetic acid and oxidation correctives; Following patent documentation 9 discloses the etching solution that is used for etching Mo/Al (Al-Nd)/Mo film, and described etching solution contains phosphoric acid, nitric acid, acetic acid and oxidation correctives.
In addition, following patent documentation 10 discloses a kind of etching solution, this etching solution all is suitable for for Mo/Al-Nd, Mo-W/Al-Nd, Mo/Al-Nd/Mo, Mo-W/Al-Nd/Mo-W, the single film of Mo and the single film of Mo-W, and described etching solution contains phosphoric acid, nitric acid, acetic acid, molybdenum etching inhibitor (ammonium salt) and water.
[patent documentation 1] korean patent application 10-2000-0047933 number
No. the 4th, 895,617, [patent documentation 2] United States Patent (USP)
[patent documentation 3] korean patent application 2001-0030192 number
[patent documentation 4] korean patent application 2001-0065327 number
[patent documentation 5] korean patent application 2002-0010284 number
[patent documentation 6] korean patent application 2001-0018354 number
[patent documentation 7] korean patent application 2000-0002886 number
[patent documentation 8] korean patent application 2001-0072758 number
[patent documentation 9] korean patent application 2000-0013867 number
[patent documentation 10] korean patent application 2002-0017093 number
In above-mentioned prior art, when the metal film that formation pixel electrode and grid and source/drain are used in the TFT of Thin Film Transistor-LCD forms sandwich construction, be difficult to obtain desirable profile,, require to use repeatedly simultaneously wet type operation and dry type operation in order to obtain desirable profile.
But if use Wet-type etching and dry-etching simultaneously, then the problem of Cun Zaiing is, because operation is numerous and diverse, thereby throughput rate reduces and expense increases, and is being disadvantageous aspect this.
Summary of the invention
In order to solve described prior art problems, the purpose of this invention is to provide a kind of etch combination and utilize described etch combination to make the method for Thin Film Transistor-LCD, adopt described etch combination only the gate wirings material Mo/Al-Nd duplex film that constitutes TFT in the Thin Film Transistor-LCD to be carried out etching by the mode that the wet type operation promptly can the following film Al-Nd of portion produce undercut phenomenon, can obtain excellent taper, source/drain single film of wiring material Mo and pixel electrode noncrystalline ITO also can form excellent profile simultaneously.
Another object of the present invention provides a kind of etch combination and utilizes described etch combination to make the method for Thin Film Transistor-LCD, gate wirings material Mo/Al-Nd duplex film, the single film of source/drain wiring material Mo and the pixel electrode noncrystalline ITO of TFT by described etch combination being applied to constitute Thin Film Transistor-LCD, can demonstrate excellent etch effect, thereby can increase the efficiency of device and reduce cost.
Another object of the present invention provides a kind of etch combination and utilizes described etch combination to make the method for Thin Film Transistor-LCD, described etch combination is not implemented the dry-etching that appends and only to carrying out Wet-type etching as the Mo/Al-Nd duplex film of gate wirings material and as the single film of Mo of source/drain wiring material behind Wet-type etching, will demonstrate excellent etch effect, thereby can simplify working process, and effectively reduce cost and boost productivity.
Another object of the present invention provides a kind of etch combination and utilizes described etch combination to make the method for Thin Film Transistor-LCD, in described etch combination, by the surface tension that reduces this etch combination it is spread well, can improve the etching homogeneity on the large substrate.
To achieve these goals, the invention provides a kind of etch combination of Thin Film Transistor-LCD, it comprises:
A) nitric acid of 5 weight %～20 weight %;
B) acetic acid of 5 weight %～20 weight %;
C) villiaumite of 0.01 weight %～2 weight %;
D) phosphate of 1 weight %～10 weight %;
E) oxidation adjuvant of 1 weight %～10 weight %; And
F) water of surplus.
In addition, the invention provides a kind of manufacture method of Thin Film Transistor-LCD, described method comprises with above-mentioned etch combination carries out etched step.
The advantage that etch combination of the present invention has is, even behind Wet-type etching, do not implement the dry-etching that appends, adopt described composition only pixel electrode ITO and the gate wirings material Mo/Al-Nd duplex film that constitutes TFT in the Thin Film Transistor-LCD to be carried out etching by the mode that the wet type operation promptly can the following film Al-Nd of portion produce undercut phenomenon, and can obtain excellent taper, the single film of source/drain wiring material Mo also can form excellent profile simultaneously.And, by described etch combination being applied to pixel electrode ITO, gate wirings material Mo/Al-Nd duplex film and the single film of source/drain wiring material Mo, have simplifying working process, increase the efficiency of device and reduce the effect of cost.
Description of drawings
Fig. 1 is the photo that expression is applied to the etch combination of one embodiment of the invention the formed profile of the single film of ITO;
Fig. 2 is the photo that expression is applied to the etch combination of one embodiment of the invention the formed profile of the single film of Mo;
Fig. 3 is the photo that expression is applied to the etch combination of one embodiment of the invention the result of Mo/Al-Nd duplex film and the single film of Mo;
Fig. 4 is the photo that expression is applied to the etch combination of one embodiment of the invention the result of Mo/Al-Nd duplex film and the single film of Mo;
Fig. 5 is the photo that expression is applied to the etch combination of one embodiment of the invention the result of Mo/Al-Nd duplex film and the single film of Mo;
Fig. 6 is the photo that expression is applied to the etch combination of comparative example 1 result of Mo/Al-Nd duplex film and the single film of Mo;
Fig. 7 is the photo that expression is applied to the etch combination of comparative example 2 result of Mo/Al-Nd duplex film and the single film of Mo;
Fig. 8 is the photo that expression is applied to the etch combination of comparative example 3 result of Mo/Al-Nd duplex film and the single film of Mo.
Embodiment
Below explain the present invention.
The etch combination of Thin Film Transistor-LCD of the present invention is characterised in that it comprises: a) 5 weight %～nitric acid of 20 weight %, b) the 5 weight %～acetic acid of 20 weight %, c) the 0.01 weight %～villiaumite of 2 weight %, d) the 1 weight %～phosphate of 10 weight %, e) oxidation adjuvant and the f of 1 weight %～10 weight %) water of surplus.
Be used for the material that nitric acid of the present invention, acetic acid and water can use the purity that can be used in semiconductor technology, also can use commercially available material or industrial grade made with extra care by the generally well-known method in this area and use.
Above-mentioned nitric acid a) that uses among the present invention can form aluminium oxide with reactive aluminum, and makes the molybdenum oxidation.
Above-mentioned nitric acid preferably contains 5 weight %～20 weight % in etch combination, and then preferably contains 6 weight %～15 weight %.Its content has the effect of the selection ratio that can regulate effectively between grid metal film and other layers in above-mentioned scope the time, and described grid metal film is made of upper membrane Mo film and lower film Al-Nd film.During particularly above-mentioned nitric acid less than 5 weight %, the problem of existence is can produce undercut phenomenon at the Mo/Al-Nd duplex film.And when surpassing 20 weight %, the profile of ITO and the single film of Mo is variation sometimes.
The above-mentioned b that uses among the present invention) acetic acid has the effect of the buffering agent that is used for reaction speed.
Above-mentioned acetic acid preferably contains 5 weight %～20 weight % in etch combination, and then preferably contains 8 weight %～15 weight %.Its content is in above-mentioned scope the time, and reaction speed improves etching speed aptly, has the effect that can boost productivity thus.
The above-mentioned c that uses among the present invention) etching speed of villiaumite decision noncrystalline ITO, its effect that has is, by using described etch combination, not only the Mo/Al-Nd duplex film can form excellent profile, and the single film of source/drain Mo also can form excellent profile.
The villiaumite that uses among the present invention is to dissociate F -Compound, can use NaF, NaHF 2, NH 4F, NH 4HF 2, NH 4BF 4, NH 4F-HF, KF, KHF 2, AlF 3, HBF 4, LiF, KBF 4Perhaps CaF 2Deng, preferably use NH 4F or NH 4F-HF.
Above-mentioned villiaumite preferably contains 0.01 weight %～2 weight % in etch combination, and then preferably contains 0.1 weight %～1 weight %.Its content is in above-mentioned scope the time, and the effect that has is not only can not produce the undercut phenomenon of lower film Al-Nd in the Mo/Al-Nd duplex film, and can form excellent profile simultaneously for ITO and the single film of Mo.
The above-mentioned d that uses among the present invention) phosphate can be regulated the etching speed of molybdenum, decomposes by the aluminium oxide of nitric acid oxidation.
The phosphate that uses among the present invention has H 3PO 4, NaH 2PO 4, Na 2HPO 4, Na 3PO 4, NH 4H 2PO 4, (NH 4) 2HPO 4, (NH 4) 3PO 4, KH 2PO 4, K 2HPO 4, K 3PO 4, Ca (H 2PO 4) 2, Ca 2HPO 4Perhaps Ca 3PO 4Deng, be preferably NH 4H 2PO 4Perhaps KH 2PO 4
Above-mentioned phosphate preferably contains 1 weight %～10 weight % in etch combination, and then preferably contains 1 weight %～5 weight %.Its content is in above-mentioned scope the time, and the effect that has is, not only can not produce the undercut phenomenon of lower film Al-Nd in the Mo/Al-Nd duplex film, and ITO and the single film of Mo can form excellent profile simultaneously, and can regulate etching speed.
The above-mentioned e that uses among the present invention) oxidation adjuvant can be regulated the etching speed of ITO, Mo, Mo/Al-Nd.
The oxidation adjuvant that uses among the present invention is CAN (ammonium ceric nitrate), the H that is used as strong oxidizer 2O 2, H 2SO 4Perhaps HClO 4Deng, be preferably H 2SO 4Perhaps HClO 4
Above-mentioned oxidation adjuvant preferably contains 1 weight %～10 weight % in etch combination, and then preferably contains 1 weight %～8 weight %.Its content is in above-mentioned scope the time, and the etching speed of ITO is the fastest, can be according to the sequential adjustment etching speed of Mo, Mo/Al-Nd.Simultaneously, can form excellent profile in single film of residue, Mo in the single film of ITO and the Mo/Al-Nd duplex film.
The above-mentioned f that uses among the present invention) water can be the surplus of etch combination, and described glassware for drinking water has the aluminium oxide that decomposes nitric acid and reactive aluminum and generate and the effect of dilution etch combination.
The water of above-mentioned surplus preferably uses the pure water that filters by ion exchange resin, and then especially preferably uses than the ultrapure water of resistance more than or equal to 18M Ω.
In addition, the invention provides the manufacture method of Thin Film Transistor-LCD, described method comprises uses the etch combination that is made of composition as mentioned above to carry out etched step.In the manufacture method of Thin Film Transistor-LCD of the present invention, utilized above-mentioned etch combination carry out etched etching work procedure before and certainly use the operation of the manufacture method be normally used for Thin Film Transistor-LCD afterwards.
The advantage that the manufacture method of Thin Film Transistor-LCD of the present invention has is, after the etch combination of the present invention that use contains mentioned component carries out Wet-type etching, even do not implement the dry-etching that appends, adopt described composition only pixel electrode ITO and the gate wirings material Mo/Al-Nd duplex film that constitutes TFT in the Thin Film Transistor-LCD to be carried out etching by the mode that the wet type operation promptly can the following film Al-Nd of portion produce undercut phenomenon, and can obtain excellent taper, thereby when subsequent handling, can prevent defective at the dip plane broken string, can prevent simultaneously the back taper phenomenon of the single film of source/drain wiring material Mo, and then can prevent/defective of lower floor's short circuit, and can form excellent profile.Also has following effect in addition: by described etch combination being applied to pixel electrode ITO and gate wirings material Mo/Al-Nd duplex film and the single film of source/drain wiring material Mo, can simplify working process, increase the efficiency of device and reduce cost, moreover, by reducing the surface tension of etch combination, etch combination can spread well, thereby can increase the etching homogeneity on large substrate.
Below list preferred embodiment in order to understand the present invention, but following embodiment only is an example of the present invention, scope of the present invention is not limited to following embodiment.
Embodiment 1
Mix the nitric acid of 15 weight %, the acetic acid of 10 weight %, the villiaumite of 0.5 weight %, the phosphate of 3 weight %, the oxidation adjuvant of 3 weight % and the water of surplus equably, produce etch combination.
Embodiment 2～3 and comparative example 1～3
Except in the foregoing description 1, using composition shown in the following table 1 and ratio of components, adopt with the same method of the foregoing description 1 and produce etch combination.At this moment, the unit of following table 1 is weight %.
Table 1
Project Embodiment Comparative example
1 2 3 1 2 3
Nitric acid 15 15 20 15 3 20
Acetic acid 10 15 10 10 15 3
Villiaumite 0.5 0.5 0.5 0.5 0.5 0.5
Phosphate 3 3 5 - 3 5
Oxidation adjuvant 3 8 8 3 8 8
Water Add to 100 weight %
The performance of the etch combination of making in the foregoing description 1～3 and the comparative example 1～3 is estimated by following method, and it the results are shown in Fig. 1～8 and the following table 2.
At first, after forming Mo/Al-Nd duplex film and the single film of Mo by sputter on the glass substrate, spray the etch combination of making in the foregoing description 1～3 and the comparative example 1～3 to the test film that has formed pattern by coating photoresist and video picture, carry out etch processes.Then, with the cross section after scanning electron microscope (SEM, the system S-4100 of society of Hitachi) the observation etching, estimate the etch combination performance.
Table 2
Project Embodiment Comparative example
1 2 3 1 2 3
Performance ○ ○ ○ × × ×
[notes] zero (well): the undercut phenomenon that can not produce lower film Al-Nd in the Mo/Al-Nd duplex film forms excellent profile and form excellent profile * (bad) in the single film of ITO in the single film of Mo: the undercut phenomenon that produces lower film Al-Nd in the Mo/Al-Nd duplex film forms bad profile and form bad profile in the single film of ITO in the single film of Mo
Can confirm by above-mentioned table 2, compare that the etch combination that the embodiment of the invention 1～3 is made all demonstrates superior etch effect to Mo/Al-Nd duplex film and Mo and the single film of ITO with the etch combination that comparative example 1～3 is made.
Specifically, when the etch combination of the embodiment of the invention 1 was applied to the single film of ITO, as shown in Figure 1, the angle of profile was 30 °～60 °, thereby excellent; Fig. 2 is that the etch combination with the embodiment of the invention 1 is applied to the single film of Mo, has 45 °～70 ° profile.Fig. 3 is the result who the etch combination of the embodiment of the invention 1 is applied to the Mo/Al-Nd duplex film, can confirm as the excellent profile that does not have undercut phenomenon.
On the contrary, for the comparative example 2 of nitric acid that does not use phosphatic comparative example 1 and contain the less than 5 weight % of minute quantity, as shown in Figure 6 and Figure 7, can confirm, produce undercut phenomenon in the Mo/Al-Nd duplex film, it is bad that the single film of Mo forms profile.
In addition, comparative example 3 for the acetic acid of the less than 5 weight % that contain minute quantity, as shown in Figure 8, in gate wirings material Mo/Al-Nd duplex film, produce stain and undercut phenomenon, for the single film of source/drain wiring material Mo, etching speed is very fast, and CD runs off (CD loss) variation greatly, the process management difficulty.And then can confirm, the single film of Mo forms back taper and then produce/defective of lower floor's short circuit.
In addition, in comparative example 2 (Fig. 7), produce the protrusion phenomenon of upper membrane Mo film and the undercut phenomenon of lower film Al-Nd film in the Mo/Al-Nd duplex film, compare with above-mentioned comparative example 2, as shown in Figure 4, can confirm that the etch combination of the foregoing description 2 does not produce the undercut phenomenon of lower film Al-Nd, can access excellent taper; In comparative example 3 (Fig. 8), the problem that produce bad taper in the single film of Mo, the upper membrane of lamination produces ladder topped (step coverage) in subsequent handling, compare with above-mentioned comparative example 3, as shown in Figure 5, can confirm that the etch combination of the foregoing description 2 can access the taper of excellence.
By The above results as can be known, compare with etch combination in the past, it is topped that etch combination of the present invention can form excellent ladder.

Claims (8)

1, a kind of etch combination of Thin Film Transistor-LCD, it comprises:
A) nitric acid of 5 weight %～20 weight %;
B) acetic acid of 5 weight %～20 weight %;
C) villiaumite of 0.01 weight %～2 weight %;
D) phosphate of 1 weight %～10 weight %;
E) oxidation adjuvant of 1 weight %～10 weight %; And
F) water of surplus.
2, the etch combination of Thin Film Transistor-LCD according to claim 1 is characterized in that, described Thin Film Transistor-LCD is the pixel electrode of TFT LCD, i.e. the single film of ITO.
3, the etch combination of Thin Film Transistor-LCD according to claim 1 is characterized in that, described Thin Film Transistor-LCD is the source/drain film of TFT LCD, i.e. the single film of Mo.
4, the etch combination of Thin Film Transistor-LCD according to claim 1 is characterized in that, described Thin Film Transistor-LCD is the gate electrode film of TFT LCD, i.e. the single film of Mo/Al-Nd.
5, the etch combination of Thin Film Transistor-LCD according to claim 1 is characterized in that, described c) villiaumite is selected from by NaF, NaHF 2, NH 4F, NH 4HF 2, NH 4BF 4, NH 4F-HF, KF, KHF 2, AlF 3, HBF 4, LiF, KBF 4And CaF 2In the group of forming more than a kind or a kind.
6, the etch combination of Thin Film Transistor-LCD according to claim 1 is characterized in that, described d) phosphate is selected from by H 3PO 4, NaH 2PO 4, Na 2HPO 4, Na 3PO 4, NH 4H 2PO 4, (NH 4) 2HPO 4, (NH 4) 3PO 4, KH 2PO 4, K 2HPO 4, K 3PO 4, Ca (H 2PO 4) 2, Ca 2HPO 4And Ca 3PO 4In the group of forming more than a kind or a kind.
7, the etch combination of Thin Film Transistor-LCD according to claim 1 is characterized in that, described e) oxidation adjuvant is selected from by CAN, H 2O 2, H 2SO 4And HClO 4In the group of forming more than a kind or a kind.
8, a kind of manufacture method of Thin Film Transistor-LCD, it comprises that any described etch combination carries out etched step in the employing claim 1～7.
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CN113322072A (en) * 2021-06-25 2021-08-31 江阴润玛电子材料股份有限公司 Compatible ITO etching solution and preparation method thereof
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CN113322072A (en) * 2021-06-25 2021-08-31 江阴润玛电子材料股份有限公司 Compatible ITO etching solution and preparation method thereof
CN113322072B (en) * 2021-06-25 2022-06-03 江阴润玛电子材料股份有限公司 Compatible ITO etching solution and preparation method thereof
CN116040951A (en) * 2021-10-28 2023-05-02 比亚迪股份有限公司 Glass etching liquid and preparation method thereof, striped glass and production method thereof

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