CN1760742A - Etching composition of thin-film transistor LCD - Google Patents
Etching composition of thin-film transistor LCD Download PDFInfo
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- CN1760742A CN1760742A CNA2005101128408A CN200510112840A CN1760742A CN 1760742 A CN1760742 A CN 1760742A CN A2005101128408 A CNA2005101128408 A CN A2005101128408A CN 200510112840 A CN200510112840 A CN 200510112840A CN 1760742 A CN1760742 A CN 1760742A
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- 239000010409 thin film Substances 0.000 title claims abstract description 33
- 238000005530 etching Methods 0.000 title abstract description 41
- 239000000203 mixture Substances 0.000 title abstract description 9
- 239000010408 film Substances 0.000 claims abstract description 60
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 24
- 150000002500 ions Chemical class 0.000 claims abstract description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 18
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 12
- 229910017604 nitric acid Inorganic materials 0.000 claims description 12
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 abstract description 24
- CBMSICGVCDVFQL-UHFFFAOYSA-N phosphonitrate Chemical compound [O-][N+](=O)OP(=O)=O CBMSICGVCDVFQL-UHFFFAOYSA-N 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 14
- 239000002184 metal Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 238000001312 dry etching Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000001105 regulatory effect Effects 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 2
- -1 alkali metal cation Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000036632 reaction speed Effects 0.000 description 2
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000006172 buffering agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 239000003651 drinking water Substances 0.000 description 1
- 235000020188 drinking water Nutrition 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 239000003456 ion exchange resin Substances 0.000 description 1
- 229920003303 ion-exchange polymer Polymers 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nonlinear Science (AREA)
- Computer Hardware Design (AREA)
- Mechanical Engineering (AREA)
- Optics & Photonics (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Weting (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention relates to an etching composition of thin-film transistor LCD, especially relates to thin-film transistor LCD containing phospho, nitric acid, acetic acid, H+ ion concentration moderator and water. The said composition can etch Mo/Al-Nd duplex film, which is used as grid wiring material of TFT of the thin-film transistor LCD, by only using wet-type procedure in a manner that lower film Al-Nd does not generate undercut phenomena, and can achieve good taper shape, meanwhile, source/drain wiring material Mo single film can also form good configuration.
Description
Technical field
The present invention relates to the etch combination of Thin Film Transistor-LCD, more particularly, relate to following etch combination, adopt mode that described composition can not produce undercut phenomenon with lower film Al-Nd that the gate wirings material Mo/Al-Nd duplex film of the TFT (thin film transistor (TFT)) that constitutes Thin Film Transistor-LCD (TFT LCD) is carried out Wet-type etching, and can obtain excellent taper, the single film of source/drain wiring material Mo also can form excellent profile (profile) simultaneously.
Background technology
Etching work procedure is the process that forms extremely fine circuit on substrate, and the same metal pattern of photoresist pattern that forms and form by the video picture operation.
Etching work procedure roughly is divided into Wet-type etching and dry-etching according to its mode, and Wet-type etching is to utilize reaction such as sour serial chemical reagent and metal and with its corrosion, with the part stripping beyond the photoresist pattern; Dry-etching is a metal of removing the extending part by speeding-up ion, thereby forms pattern.
Dry-etching is compared the advantage that has with Wet-type etching, have anisotropy profile, etching control power excellence.But the problem of existence is to install costliness, be difficult to large tracts of landization, also reduce owing to etching speed makes throughput rate slowly.
On the contrary, Wet-type etching is compared the advantage that has and is with dry-etching, can a large amount of and large-scale processing, throughput rate height, device are cheap because etching speed is fast.But the problem of existence is, etchant and the pure water use amount is many, waste liquid amount is many.
When carrying out dry-etching, in order to remove the partly solidified photoresist on surface, generally can append the plasma ashing operation, become the main cause of device price, activity time loss isoproductivity reduction and the reduction of goods competitive power, therefore, in fact mainly use Wet-type etching in actual field.
And the etchant that is used for Wet-type etching can specifically be suitable for according to the desired item of more accurate fine circuits, the kind that will carry out etched metal.
Korean patent application discloses a kind of etching solution 2002-0017093 number, this etching solution all is suitable for for Mo/Al-Nd, Mo-W/Al-Nd, Mo/Al-Nd/Mo, Mo-W/Al-Nd/Mo-W, the single film of Mo and the single film of Mo-W, and described etching solution contains phosphoric acid, nitric acid, acetic acid, molybdenum etching inhibitor (ammonium salt) and water.
But, if the grid of the TFT that constitutes Thin Film Transistor-LCD is carried out etching with metal film Mo/Al-Nd duplex film with above-mentioned etching or etchant in the past, then exist and to produce the protrusion phenomenon of top Mo film and the such problem of undercut phenomenon of bottom Al-Nd film, the protrusion phenomenon of this upper membrane must be implemented to append operation and remove, the undercut phenomenon of lower film exist the broken string of upper membrane or top and the bottom metal in the dip plane by problem of short-circuit.
And then, the problem that above-mentioned etch combination in the past exists is, when the source/drain that constitutes Thin Film Transistor-LCD is carried out etching with metal film Mo film, can cause taper bad, and make that in subsequent handling the ladder topped (step coverage) of upper membrane of lamination is bad.
Thereby, in fact need further etching solution to be studied, described etching solution not only all is suitable for the metal wiring material for grid and the source/drain of the TFT of in the past formation Thin Film Transistor-LCD, and the end point determination that can realize separately suiting (end pointdetection, EPD) and form excellent profile.
Summary of the invention
In order to solve described technical matters in the past, the purpose of this invention is to provide a kind of etch combination and utilize described etch combination to make the method for Thin Film Transistor-LCD, adopt mode that described etch combination only promptly can the following film Al-Nd of portion do not produce undercut phenomenon by the wet type operation that the gate wirings material Mo/Al-Nd duplex film of the TFT that constitutes Thin Film Transistor-LCD is carried out etching, and can obtain excellent taper, the single film of source/drain wiring material Mo also can form excellent profile simultaneously.
Another object of the present invention provides a kind of etch combination and utilizes described etch combination to make the method for Thin Film Transistor-LCD, by this etch combination being applied to constitute gate wirings material Mo/Al-Nd duplex film and the single film of source/drain wiring material Mo of Thin Film Transistor-LCD TFT, can demonstrate excellent etch effect, thereby can increase the efficiency of device and reduce cost.
Another object of the present invention provides a kind of etch combination and utilizes described etch combination to make the method for Thin Film Transistor-LCD, described etch combination is not implemented the dry-etching that appends and only gate wirings material Mo/Al-Nd duplex film and the single film of source/drain wiring material Mo is carried out Wet-type etching behind Wet-type etching, will demonstrate excellent etch effect, thereby can simplify working process, and effectively reduce cost and boost productivity.
Another object of the present invention provides a kind of etch combination and utilizes described etch combination to make the method for Thin Film Transistor-LCD, for described etch combination, by regulating the etch capabilities of etch combination, can all be suitable for for grid and source/drain wiring material, and to the etch effect excellence of each wiring material.
To achieve these goals, the invention provides a kind of etch combination of Thin Film Transistor-LCD, it comprises:
A) phosphoric acid of 50 weight %～75 weight %;
B) nitric acid of 1 weight %～15 weight %;
C) acetic acid of 1 weight %～15 weight %;
D) [the H of 0.1 weight %～5 weight %
+] the ion concentration correctives; And
E) water of surplus.
In addition, the invention provides a kind of manufacture method of Thin Film Transistor-LCD, described method comprises with above-mentioned etch combination carries out etched step.
The advantage that etch combination of the present invention has is, behind Wet-type etching, do not implement the dry-etching that appends, adopt mode that described composition only promptly can the following film Al-Nd of portion do not produce undercut phenomenon by the wet type operation that the gate wirings material Mo/Al-Nd duplex film of the TFT that constitutes Thin Film Transistor-LCD is carried out etching, and can obtain excellent taper, the single film of source/drain wiring material Mo also can form excellent profile simultaneously.And, by described etch combination being applied to gate wirings material Mo/Al-Nd duplex film and the single film of source/drain wiring material Mo, can simplify working process, increase the efficiency of device and reduce cost, moreover, by reducing the surface tension of etch combination, etch combination can spread well, thereby can increase the etching homogeneity on large substrate.
Description of drawings
Fig. 1 is the photo that expression is applied to the etch combination of one embodiment of the invention the result of Mo/Al-Nd duplex film and the single film of Mo;
Fig. 2 is the photo that etch combination in the past is applied to the result of Mo/Al-Nd duplex film and the single film of Mo.
Embodiment
Below explain the present invention.
The etch combination of Thin Film Transistor-LCD of the present invention is characterised in that it comprises: a) 50 weight %～phosphoric acid of 75 weight %, b) the 1 weight %～nitric acid of 15 weight %, c) the 1 weight %～acetic acid of 15 weight %, d) [the H of 0.1 weight %～5 weight %
+] ion concentration correctives and e) water of surplus.
Be used for the material that phosphoric acid of the present invention, nitric acid, acetic acid and water can use the purity that can be used in semiconductor technology, also can use commercially available material or the material of industrial grade made with extra care by the generally well-known method in this area and use.
Above-mentioned phosphoric acid a) that uses among the present invention has the effect of decomposing oxidation aluminium.
Above-mentioned phosphoric acid preferably contains 50 weight %～75 weight % in etch combination, and then preferably contains 64 weight %～72 weight %.Its content is in above-mentioned scope the time, nitric acid and reactive aluminum and the aluminium oxide that forms can suitably be decomposed, and etching speed is accelerated, and has the effect of boosting productivity.
The above-mentioned b that uses among the present invention) nitric acid and reactive aluminum and form aluminium oxide.
Above-mentioned nitric acid preferably contains 1 weight %～15 weight % in etch combination, and then preferably contains 4 weight %～8 weight %.Its content has the effect of the selection ratio that can regulate effectively between grid metal film and other layers in above-mentioned scope the time, and described grid metal film is made of upper membrane Mo film and lower film Al-Nd film.During particularly above-mentioned nitric acid less than 1 weight %, the problem of existence is can produce undercut phenomenon at the Mo/Al-Nd duplex film.
The above-mentioned c that uses among the present invention) acetic acid has the effect of the buffering agent that is used for reaction speed.
Above-mentioned acetic acid preferably contains 1 weight %～15 weight % in etch combination, and then preferably contains 5 weight %～10 weight %.Its content is in above-mentioned scope the time, and reaction speed improves etching speed aptly, has the effect that can boost productivity thus.
The above-mentioned d that uses among the present invention) [H
+] the ion concentration correctives has the effect of the etching speed of regulating molybdenum and aluminum metal.It is by regulating [H in the presence of same negative ion
+] ion amount and regulate the etching speed of metal.
Above-mentioned [H
+] the ion concentration correctives is ionic salt, kation can use NH
4+, N (CH
3)
4+Deng amine system, Li
+, Na
+, K
+Deng alkali metal cation, Mg
2+, Ca
2+Deng alkaline-earth metal kation or Fe
3+, Cu
2+Deng transition-metal cation etc., can use NO as negative ion
3 -, CH
3COO
-, PO
4 -Perhaps OH
-Deng.
Above-mentioned [H
+] the ion concentration correctives preferably contains 0.1 weight %～5 weight % in etch combination.Its content is in above-mentioned scope the time, and the effect that has is not only can not produce the undercut phenomenon of lower film Al-Nd in the Mo/Al-Nd duplex film, and the single film of Mo also can form excellent profile simultaneously.
The above-mentioned e that uses among the present invention) water can be the surplus of etch combination, and described glassware for drinking water has the aluminium oxide that decomposes nitric acid and reactive aluminum and generate and the effect of dilution etch combination.
The water of above-mentioned surplus preferably uses the pure water that filters by ion exchange resin, and then especially preferably uses than the ultrapure water of resistance more than or equal to 18M Ω.
In addition, the invention provides the manufacture method of Thin Film Transistor-LCD, described method comprises uses the etch combination that is made of composition as mentioned above to carry out etched step.In the manufacture method of Thin Film Transistor-LCD of the present invention, utilized above-mentioned etch combination carry out etched etching work procedure before and certainly use the operation of the manufacture method be normally used for Thin Film Transistor-LCD afterwards.
The advantage that the manufacture method of Thin Film Transistor-LCD of the present invention has is, after the etch combination of the present invention that use contains mentioned component carries out Wet-type etching, even do not implement the dry-etching that appends, adopt mode that described composition only promptly can the following film Al-Nd of portion do not produce undercut phenomenon by the wet type operation that the gate wirings material Mo/Al-Nd duplex film of the TFT that constitutes Thin Film Transistor-LCD is carried out etching, and can obtain excellent taper, thereby when subsequent handling, can prevent defective, can prevent the back taper phenomenon of the single film of source/drain wiring material Mo simultaneously at the dip plane broken string, and then can prevent/defective of lower floor's short circuit.Also has following effect in addition: by described etch combination being applied to gate wirings material Mo/Al-Nd duplex film and the single film of source/drain wiring material Mo, can simplify working process, increase the efficiency of device and reduce cost, moreover, by reducing the surface tension of etch combination, etch combination can spread well, thereby can increase the etching homogeneity on large substrate.
Below list preferred embodiment in order to understand the present invention, but following embodiment only is an example of the present invention, scope of the present invention is not limited to following embodiment.
Mix the phosphoric acid of 68 weight %, the nitric acid of 5 weight %, the acetic acid of 10 weight the %, [H of 1 weight % equably
+] water of ion concentration correctives KOH and surplus, produce etch combination.
Embodiment 2～4 and comparative example 1～4
Except in the foregoing description 1, using composition shown in the following table 1 and ratio of components, adopt with the same method of the foregoing description 1 and produce etch combination.At this moment, the unit of following table 1 is weight %.
Table 1
| Project | Embodiment | Comparative example | ||||||
| 1 | 2 | 3 | 4 | 1 | 2 | 3 | 4 | |
| Phosphoric acid | 68 | 64 | 67 | 65 | 68 | 64 | 67 | 65 |
| Nitric acid | 5 | 6 | 6 | 8 | 5 | 6 | 6 | 8 |
| Acetic acid | 10 | 10 | 10 | 10 | 10 | 10 | 10 | 10 |
| [H
+] the | 1 | 2 | 2 | 2 | - | - | - | - |
| Water | Add to 100 weight % | |||||||
The performance of the etch combination of making in the foregoing description 1～4 and the comparative example 1～4 is estimated by following method.
At first, after forming Mo/Al-Nd duplex film and the single film of Mo on the glass substrate, spray the etch combination of making in the foregoing description 1～4 and the comparative example 1～4, carry out etch processes to the test film that has formed pattern by coating photoresist and video picture.Then, carry out end point determination (EPD) after the etching, and pass through the profile that metal wiring is measured in 30% and 60% excessive etching (over etching), it the results are shown in the following table 2.
In addition, the etch combination of the foregoing description 1 and comparative example 1 is applied to Mo/Al-Nd duplex film and the single film of Mo after, (SEM, the system S-4100 of society of Hitachi) observes the cross section with scanning electron microscope, it the results are shown among Fig. 1 and Fig. 2.
Table 2
| Project | Embodiment | Comparative example | |||||||
| 1 | 2 | 3 | 4 | 1 | 2 | 3 | 4 | ||
| EPD | Very good | Well | Very good | Well | Very good | Very good | Very good | Well | |
| Profile | 30％ | Very good | Very good | Very good | Very good | Bad | Bad | Bad | Bad |
| 60％ | Very good | Very good | Very good | Very good | Very bad | Very bad | Bad | Bad | |
Can confirm that by above-mentioned table 2 compare with the etch combination that comparative example 1～4 is made, the etch combination that the embodiment of the invention 1～4 is made all demonstrates superior etch effect to Mo/Al-Nd duplex film and the single film of Mo.
In addition, shown in Figure 1 as the flying-spot microscope photo in etching cross section can be confirmed, for the Mo/Al-Nd duplex film of the etch combination of having used the embodiment 1 that makes by the present invention, can not produce undercut phenomenon, can form excellent profile for the single film of Mo simultaneously yet.
On the contrary, the situation of suitable etch combination in the past can be confirmed as shown in Figure 2, produces undercut phenomenon at the Mo/Al-Nd duplex film, and the single film formation of Mo profile is bad.
Claims (5)
1, a kind of etch combination of Thin Film Transistor-LCD, it comprises:
A) phosphoric acid of 50 weight %～75 weight %;
B) nitric acid of 1 weight %～15 weight %;
C) acetic acid of 1 weight %～15 weight %;
D) [the H of 0.1 weight %～5 weight %
+] the ion concentration correctives; And
E) water of surplus.
2, the etch combination of Thin Film Transistor-LCD according to claim 1 is characterized in that, described Thin Film Transistor-LCD is the gate electrode film of TFT LCD, i.e. the Mo/Al-Nd duplex film.
3, the etch combination of Thin Film Transistor-LCD according to claim 1 is characterized in that, described Thin Film Transistor-LCD is the source/drain film of TFT LCD, i.e. the single film of Mo.
4, the etch combination of Thin Film Transistor-LCD according to claim 1 is characterized in that, for described d) [H
+] the ion concentration correctives, kation is selected from by NH
4+, N (CH
3)
4+, Li
+, Na
+, K
+, Mg
2+, Ca
2+, Fe
3+And Cu
2+In the group of forming, negative ion is selected from by NO
3 -, CH
3COO
-, PO
4 -And OH
-In the group of forming.
5, a kind of manufacture method of Thin Film Transistor-LCD, it comprises that any described etch combination carries out etched step in the employing claim 1～4.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020040082378A KR101064626B1 (en) | 2004-10-14 | 2004-10-14 | Etching composition for tft lcd |
| KR1020040082378 | 2004-10-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1760742A true CN1760742A (en) | 2006-04-19 |
Family
ID=36706861
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2005101128408A Pending CN1760742A (en) | 2004-10-14 | 2005-10-14 | Etching composition of thin-film transistor LCD |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR101064626B1 (en) |
| CN (1) | CN1760742A (en) |
| TW (1) | TWI385804B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115948746A (en) * | 2022-12-30 | 2023-04-11 | 浙江奥首材料科技有限公司 | Al/Mo etching solution, and preparation method and application thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20170006480A (en) | 2015-07-08 | 2017-01-18 | 동우 화인켐 주식회사 | Etching solution composition for multi layers and manufacturing method of an array substrate for liquid crystal display using the same |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4074018B2 (en) * | 1998-12-22 | 2008-04-09 | 東芝松下ディスプレイテクノロジー株式会社 | Thin film patterning method |
| TWI255957B (en) * | 1999-03-26 | 2006-06-01 | Hitachi Ltd | Liquid crystal display device and method of manufacturing the same |
| JP4920140B2 (en) * | 2001-05-18 | 2012-04-18 | ゲットナー・ファンデーション・エルエルシー | Liquid crystal display device and manufacturing method thereof |
| KR100505328B1 (en) * | 2002-12-12 | 2005-07-29 | 엘지.필립스 엘시디 주식회사 | ETCHING SOLUTIONS AND METHOD TO REMOVE MOLYBDENUM RESIDUE FOR Cu MOLYBDENUM MULTILAYERS |
-
2004
- 2004-10-14 KR KR1020040082378A patent/KR101064626B1/en active IP Right Grant
-
2005
- 2005-09-27 TW TW094133525A patent/TWI385804B/en not_active IP Right Cessation
- 2005-10-14 CN CNA2005101128408A patent/CN1760742A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115948746A (en) * | 2022-12-30 | 2023-04-11 | 浙江奥首材料科技有限公司 | Al/Mo etching solution, and preparation method and application thereof |
| CN115948746B (en) * | 2022-12-30 | 2024-04-30 | 浙江奥首材料科技有限公司 | Al/Mo etching solution, and preparation method and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101064626B1 (en) | 2011-09-15 |
| KR20060033334A (en) | 2006-04-19 |
| TW200616233A (en) | 2006-05-16 |
| TWI385804B (en) | 2013-02-11 |
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