CN1758448A - High-brightness Im-Ga-Al nitride LED and its manufacturing method - Google Patents
High-brightness Im-Ga-Al nitride LED and its manufacturing method Download PDFInfo
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- CN1758448A CN1758448A CNA2004100849151A CN200410084915A CN1758448A CN 1758448 A CN1758448 A CN 1758448A CN A2004100849151 A CNA2004100849151 A CN A2004100849151A CN 200410084915 A CN200410084915 A CN 200410084915A CN 1758448 A CN1758448 A CN 1758448A
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Abstract
This invention discloses a bright InGaAlN LED and its manufactured method, said LED includes a substrate, a first conductive nitride layer, an active layer, a second conductive nitride layer, a first contact layer, a second contact layer and a conductive photic zone, among which, the first contact layer has a first band-gap and a first doped concentration set on the second nitride layer, the second contact layer has a second band-gap and a second doped density on the first contact layer, the two doped concentrations are greater than a preset concentration separately and the first band-gap is smaller than the second, the second contact layer is smaller than a preset thickness to generate a tunnel effect between the photic zone and the second contact layer when the LED is working.
Description
Technical field
The present invention relates to a kind of structure and manufacture method thereof of high brightness LED, more specifically, relate to a kind of high-brightness Im-Ga-Al nitride LED of low-work voltage, and need not use high-dopant concentration to reduce operating voltage.
Background technology
Light-emitting diode (LED) is different with conventional light source because of its principle of luminosity, structure etc., make that LED has that volume is little, high-reliability, can produce in a large number and can the cooperation demand make characteristics such as various large-scale elements, be applied to indoor or outdoors large display screen curtain usually.Compared to conventional light source, LED has no filament, power consumption is little, the product reaction speed is fast advantage, also can be widely used in various fields such as communication, electronics.Improve the crystal grain brightness of LED, reduce the element power consumption, then become important research direction to increase the competitiveness in market.
In recent years, in order to improve the brightness of light-emitting diode, conductive euphotic zone (as tin indium oxide, zinc oxide etc.) is applied on the electrooptical device miscellaneous widely, for example Thin Film Transistor-LCD (TFTLCD), Organic Light Emitting Diode (OLED) and light-emitting diode etc.Yet the forward drop when light-emitting diode is worked is low and keep stable, need form ohmic contact with conductive euphotic zone, and this also is one of required subject matter that overcomes when making high brightness LED.
Tin indium oxide is a kind of current material that is used for conductive euphotic zone.People such as Oberman disclose one nickel/au film coating between tin indium oxide and p type gallium indium nitride layer in United States Patent (USP) case numbers 5,925,897.People such as Lin are in U.S. Patent number 6,465, disclose the point-like conductive euphotic zone in 808 its extinction area is diminished, and have increased luminous efficiency.People such as Ludowise disclose a kind of conductive euphotic zone of multilayer in United States Patent (USP) case numbers 6,287,947, between tin indium oxide and p type gallium nitride layer.Above-mentioned prior art can cause that forward voltage is not good because on different rough surfaces, build brilliant wayward, and the influence of hydrogen passivation effect (hydrogen passivation effect).
About reducing forward voltage aspect, below prior art use an intermediary layer to contact with conductive euphotic zone.People such as Okazaki disclose some metal intermediary layers (for example magnesium, nickel, gold, zinc, and titanium etc.) and form ohmic contact in United States Patent (USP) case numbers 5,977,566.When using metal as intermediary layer, though can form ohmic contact with conductive euphotic zone, metal level can absorb light and cause light transmission not good, and then has reduced luminous efficiency.People such as Jou disclose a kind of high-dopant concentration (greater than 5 * 10 in United States Patent (USP) case number 6,078,064
18Cm
-3) p type contact layer be used as intermediary layer, for example GaAs, aluminum gallium arsenide or gallium phosphide.People such as Suzuki disclose a kind of selectivity p type charge carrier high-dopant concentration in United States Patent (USP) case numbers 6,479,836 superlattice layer (super-lattice layer) to be to reduce forward voltage, for example InGaN/gallium nitride, aluminium gallium nitride alloy/gallium nitride or the like.And utilize oxygen that indium tin oxide layer provides to convert nickel to nickel oxide with as intermediary layer.Though use the intermediary layer of high-dopant concentration to form ohmic contact with conductive euphotic zone, high-dopant concentration also increases charge carrier diffusion image, and then causes element stability and reliability to reduce.
From the above mentioned as can be known, provide a kind of have simultaneously stability and reliability, and the time have in work that the high brightness LED of good forward voltage is real its necessity.
Summary of the invention
The present invention is used for solving the variety of issue that the prior art light-emitting diode is run into.
One aspect of the present invention is to provide a high brightness LED, and has contact layer and stable and the low operating voltage of low doping concentration.
The present invention provides a high brightness LED on the other hand, produces tunnel effect between the conductive euphotic zone and second contact layer during its work, and by the forward voltage of the THICKNESS CONTROL conductive euphotic zone of second contact layer.
Another aspect of the invention provides a high brightness LED, and its contact layer uses the InGaN aluminum with higher light transmittance.
The present invention discloses a kind of high brightness LED, comprises substrate, first conductivity type nitride layers, active layer, second conductivity type nitride layers, first contact layer, second contact layer and conductive euphotic zone.First conductivity type nitride layers is positioned on the substrate with as a coating layer.Active layer is positioned on first conductivity type nitride layers with as a luminescent layer.Second conductivity type nitride layers is positioned on the active layer with as a coating layer.First contact layer has first band gap and first doping content, and is positioned on second conductivity type nitride layers.Second contact layer has second band gap and second doping content, and is positioned on first contact layer.Conductive euphotic zone is positioned on second contact layer.
First doping content and second doping content are respectively greater than a predetermined concentration, and first band gap is less than second band gap.Second contact layer makes and produce a tunnel effect between the conductive euphotic zone and second contact layer when light-emitting diode is worked less than a predetermined thickness.Light emitting diode construction disclosed by the invention can reduce operating voltage, and can stablize running under general voltage source of supply.Contact layer need not use high-dopant concentration, can further reduce the charge carrier diffusion effect and forward voltage maintenance is stablized.In addition, operating voltage can be controlled by the thickness of second contact layer, and second contact layer can be controlled at desirable scope by crystal technique of heap of stone, and this makes technologic complexity and problem reduce significantly.
Description of drawings
Figure 1A is the schematic diagram according to the high brightness LED of the present invention's one specific embodiment;
Figure 1B is the energy rank schematic diagram of high brightness LED shown in Figure 1A;
Fig. 2 A is the schematic diagram according to the high brightness LED of another specific embodiment of the present invention;
Fig. 2 B is the energy rank schematic diagram of high brightness LED shown in Fig. 2 A; And
Fig. 3 is the schematic diagram according to the high brightness LED of the another specific embodiment of the present invention.
Description of reference numerals
10 high brightness LEDs, 102 substrates
104 first conductivity type nitride layers, 106 active layers
108 second conductivity type nitride layers, 110 first contact layers
112 second contact layers, 114 conductive euphotic zones
20 high brightness LEDs, 202 substrates
204 n type gallium nitride layers, 206 active layer
208 P type gallium nitride layers, 210 first contact layers
212 second contact layers, 214 indium tin oxide layers
30 high brightness LEDs, 302 substrates
304 P type aluminium gallium nitride alloy layers, 306 active layer
308 N type aluminium gallium nitride alloy layers, 310 first contact layer
312 second contact layers, 314 zinc oxide films
Embodiment
Figure 1A is the schematic diagram according to the high brightness LED 10 of the present invention's one specific embodiment.Figure 1B is the energy rank schematic diagram of high brightness LED shown in Figure 1A.With reference to Figure 1A, high brightness LED 10 comprises substrate 102, first conductivity type nitride layers 104, active layer 106, second conductivity type nitride layers 108, first contact layer 110, second contact layer 112 and conductive euphotic zone 114.The material of substrate 102 comprises any existing material, for example silicon substrate, carborundum, GaAs or the like.First conductivity type nitride layers 104 is positioned on the substrate 102 to be positioned at as a coating layer, active layer 106 on first conductivity type nitride layers 104 to be positioned at as a luminescent layer, second conductivity type nitride layers 108 on the active layer 106 with as a coating layer.First conductivity type nitride layers 104, active layer 106, the second conductive type nitride layer 108 comprise any existing material.In this embodiment, first conductivity type nitride layers 104 is that a P type gallium nitride layer, second conductivity type nitride layers 108 are that a n type gallium nitride layer and active layer 106 are a gallium indium nitride layer.Active layer 106 is as the luminescent layer of a high brightness LED of the present invention, and its principle of luminosity is existing technology with mechanism, does not repeat them here.
First contact layer 110 is positioned on second conductivity type nitride layers 108, and has one first band gap and one first doping content.Second contact layer 112 is positioned on first contact layer 110, and has one second band gap and one second doping content.Conductive euphotic zone 114 is positioned on second contact layer 112.The material of conductive euphotic zone 114 comprises existing material, for example tin indium oxide, zinc oxide, indium oxide, zirconia etc.The material of first contact layer 110 and second contact layer 112 comprises Im-Ga-Al nitride, and it consists of In
xGa
yAl
zN, and x+y+z=1,0≤x, y, z≤1.Wherein first band gap of first contact layer 110 less than second band gap, first doping content and second doping content of second contact layer 112 respectively greater than 5 * 10
16Cm
-3, and the thickness of second contact layer 112 is less than 20 dusts (Angstrom).In this embodiment, first contact layer 110 and second contact layer 112 mix for the P type.By the characteristic of first contact layer 110 and second contact layer 112, when light-emitting diode 10 work, produce a tunnel effect between the conductive euphotic zone 114 and second contact layer 112.
In the middle of prior art, form the mode of ohmic contact, use a low band gaps material, must have high-dopant concentration simultaneously with as contact layer.The restriction of low band gaps has reduced the elasticity that the contact layer material is selected.For example, generally when using indium in the contact layer, can reduce the light transmission of material, yet in the prior art,, more or less need in the contact layer material, to use indium in order to meet the low band gaps restriction of contact layer.And the present invention can improve this restriction, can more clearly understand the operation principle of high brightness LED of the present invention with reference to Figure 1B.The present invention only needs the band gap of the band gap of first contact layer less than second contact layer on band gap.For example: contact layer consists of In
xGa
yAl
zN, and x+y+z=1,0≤x, y, z≤1, when x was zero, contact layer of the present invention did not comprise indium, has improved the selection elasticity and the advantage of materials used.In addition, need in the middle of the prior art to use high-dopant concentration (greater than 5 * 10
18Cm
-3) reach ohmic contact, yet, when improving doping content, also be accompanied by many shortcomings.Doping content can make when improving that diffusion effect increases, and these unnecessary ions diffusion can cause the stability of element and reliability to reduce.Moreover the doping content raising can make the absorptance of contact layer increase, and causes the luminous efficiency of element to reduce.In addition, high-dopant concentration also has easy oxidation, passivation shortcomings such as (passivation).The present invention allow than under the low doping concentration (greater than 5 * 10
16Cm
-3), can form ohmic contact, solve the deficiencies in the prior art.
Use high-dopant concentration to come Control work voltage compared to prior art, the invention provides the operating voltage that easier mode is come control element on the technology.The present invention is by being controlled in second contact layer 112 within the predetermined thickness, that is the tunnel width D of tunnel effect (being shown in Figure 1B), just can reach the operating voltage of control light-emitting diode 10.The thickness of second contact layer 112 is generally less than 20 dusts, just can effectively produce tunnel effect, the band gap that this moment, electronics need not crossed over second contact layer 112, and directly pass through second contact layer 112 by tunnel effect.The thickness of second contact layer 112 can be reached good control by crystal technique of heap of stone.Because control thickness is come easily than doping content, therefore the invention provides stable and reliable high brightness LED.Must be noted that at this thickness of first contact layer does not influence the operating voltage of light-emitting diode of the present invention.
Fig. 2 A is the schematic diagram according to the high brightness LED 20 of another specific embodiment of the present invention.Fig. 2 B is the energy rank schematic diagram of high brightness LED shown in Fig. 2 A.With reference to Fig. 2 A, high brightness LED 20 comprises substrate 202, n type gallium nitride layer 204, active layer 206, P type gallium nitride layer 208, first contact layer 210, second contact layer 212 and indium tin oxide layer 214.First contact layer 210 has one first band gap and one first doping content.Second contact layer 212 has one second band gap and one second doping content.The material of first contact layer 210 and second contact layer 212 comprises Im-Ga-Al nitride, and it consists of In
xGa
yAl
zN, and x+y+z=1,0≤x, y, z≤1.Wherein first band gap of first contact layer 210 less than second band gap, first doping content and second doping content of second contact layer 212 respectively greater than 5 * 10
16Cm
-3The thickness of first contact layer 210 is 10 dusts, and the thickness of second contact layer 212 is 20 dusts.The present invention is by being controlled in second contact layer 212 within the predetermined thickness, that is the tunnel width D of tunnel effect (being shown in Fig. 2 B), just can reach the operating voltage of control light-emitting diode 20.The band gap that this moment, second contact layer 212 need not crossed in the hole, and directly pass through second contact layer 212 by tunnel effect.It should be noted that at this those skilled in the art should know that other characteristic of present embodiment is identical with advantage and the above embodiments, do not repeat them here.
Fig. 3 is the schematic diagram according to the high brightness LED 30 of another specific embodiment of the present invention.With reference to Fig. 3, high brightness LED 30 comprises substrate 302, P type aluminium gallium nitride alloy layer 304, active layer 306, N type aluminium gallium nitride alloy layer 308, first contact layer 310, second contact layer 312 and zinc oxide film 314.First contact layer 310 has one first band gap and one first doping content.Second contact layer 312 has one second band gap and one second doping content.The material of first contact layer 310 and second contact layer 312 comprises Im-Ga-Al nitride, and it consists of In
xGa
yAl
zN, and x+y+z=1,0≤x, y, z≤1.Wherein first band gap of first contact layer 310 less than second band gap, first doping content and second dopant concentration of second contact layer 3 12 respectively greater than 5 * 10
16Cm
-3The thickness of first contact layer 310 is 600 dusts, and the thickness of second contact layer 312 is 10 dusts.The present invention just can reach the operating voltage of control light-emitting diode 30 by second contact layer 312 is controlled within the predetermined thickness.It should be noted that at this those skilled in the art should know that other characteristic of present embodiment is identical with advantage and the above embodiments, do not repeat them here.
The present invention also discloses a kind of method that forms Im-Ga-Al nitride LED, and comprising provides a substrate.Form one first conductivity type nitride layers on substrate, with as a coating layer.Form an active layer on first conductivity type nitride layers, with as a luminescent layer.Form one second conductivity type nitride layers on active layer, with as a coating layer.Form one first InGaN aluminium lamination on second conductivity type nitride layers, and the first InGaN aluminium lamination have one first band gap and one first doping content.Form one second InGaN aluminium lamination on the first InGaN aluminium lamination, and the second InGaN aluminium lamination have one second band gap and one second doping content.First band gap is less than second band gap, and first doping content and second doping content are greater than a predetermined concentration.Form a conductive euphotic zone on this second InGaN aluminium lamination.The second InGaN aluminium lamination makes and produce a tunnel effect between the conductive euphotic zone and the second InGaN aluminium lamination when light-emitting diode is worked less than a predetermined thickness.
Specific embodiment from the above mentioned the invention provides a kind of have simultaneously stability and reliability as can be known, and has the good forward high brightness LED and the manufacture method thereof of voltage when work.But those skilled in the art should be known in the above embodiments in order to describe the present invention, and right the technology of the present invention still can have many modifications and variation.Therefore, the present invention is not limited to the description of above specific embodiment, and claim of the present invention desires to comprise all, and this type of is revised and variation, with real spirit according to the invention of energy and scope.
Claims (10)
1. light-emitting diode comprises:
One substrate;
One first conductivity type nitride layers is positioned on this substrate with as a coating layer;
One active layer is positioned on this first conductivity type nitride layers with as a luminescent layer;
One second conductivity type nitride layers is positioned on this active layer with as a coating layer;
One first contact layer is positioned on this second conductivity type nitride layers, and this first contact layer has one first band gap;
One second contact layer is positioned on this first contact layer, and this second contact layer has one second band gap, and wherein this first band gap is less than this second band gap; And
One conductive euphotic zone is positioned on this second contact layer;
Wherein this second contact layer makes and produce a tunnel effect between this conductive euphotic zone and this second contact layer when this light-emitting diode work less than a predetermined thickness.
2. light-emitting diode as claimed in claim 1, wherein:
This first contact layer has one first doping content; And
This second contact layer has one second doping content, and this first doping content and this second doping content are respectively greater than a predetermined concentration.
3. light-emitting diode as claimed in claim 2, wherein this is predefined for 5 * 10
16Cm
-3
4. light-emitting diode as claimed in claim 1, wherein this predetermined thickness is 20 dusts.
5. light-emitting diode as claimed in claim 1, wherein this first contact layer is an Im-Ga-Al nitride.
6. light-emitting diode as claimed in claim 1, wherein this second contact layer is an Im-Ga-Al nitride.
7. light-emitting diode as claimed in claim 1, wherein this conductive euphotic zone comprises tin indium oxide, zinc oxide, indium oxide, zirconia etc.
8. method that forms Im-Ga-Al nitride LED comprises:
One substrate is provided;
Form one first conductivity type nitride layers on this substrate, with as a coating layer;
Form an active layer on this first conductivity type nitride layers, with as a luminescent layer;
Form one second conductivity type nitride layers on this active layer, with as a coating layer;
Form one first InGaN aluminium lamination on this second conductivity type nitride layers, this first InGaN aluminium lamination has one first band gap and one first doping content;
Form one second InGaN aluminium lamination on this first InGaN aluminium lamination, this second InGaN aluminium lamination has one second band gap and one second doping content, wherein this first band gap is less than this second band gap, and this first doping content and this second doping content are greater than a predetermined concentration; And
Form a conductive euphotic zone on this second InGaN aluminium lamination;
Wherein this second InGaN aluminium lamination makes and produce a tunnel effect between this conductive euphotic zone and this second InGaN aluminium lamination when this light-emitting diode work less than a predetermined thickness.
9. method as claimed in claim 16, wherein this predetermined concentration is greater than 5 * 10
16Cm
-3
10. method as claimed in claim 16, wherein this predetermined thickness is 20 dusts.
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|---|---|---|---|
| CNB2004100849151A CN100356596C (en) | 2004-10-10 | 2004-10-10 | High-brightness Im-Ga-Al nitride LED and its manufacturing method |
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| CNB2004100849151A CN100356596C (en) | 2004-10-10 | 2004-10-10 | High-brightness Im-Ga-Al nitride LED and its manufacturing method |
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| CN1758448A true CN1758448A (en) | 2006-04-12 |
| CN100356596C CN100356596C (en) | 2007-12-19 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103545405A (en) * | 2013-11-11 | 2014-01-29 | 天津三安光电有限公司 | Nitride light emitting diode |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3160914B2 (en) * | 1990-12-26 | 2001-04-25 | 豊田合成株式会社 | Gallium nitride based compound semiconductor laser diode |
| JP3333356B2 (en) * | 1995-07-12 | 2002-10-15 | 株式会社東芝 | Semiconductor device |
| KR100267839B1 (en) * | 1995-11-06 | 2000-10-16 | 오가와 에이지 | Nitride semiconductor device |
| JPH11251685A (en) * | 1998-03-05 | 1999-09-17 | Toshiba Corp | Semiconductor laser |
| US6078064A (en) * | 1998-05-04 | 2000-06-20 | Epistar Co. | Indium gallium nitride light emitting diode |
-
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103545405A (en) * | 2013-11-11 | 2014-01-29 | 天津三安光电有限公司 | Nitride light emitting diode |
| WO2015067096A1 (en) * | 2013-11-11 | 2015-05-14 | 厦门市三安光电科技有限公司 | Nitride light-emitting diode |
| CN103545405B (en) * | 2013-11-11 | 2016-03-30 | 天津三安光电有限公司 | Iii-nitride light emitting devices |
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| Publication number | Publication date |
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| CN100356596C (en) | 2007-12-19 |
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Effective date of registration: 20060310 Address after: Hsinchu city of Taiwan Province Applicant after: Jingyuan Optoelectronics Co., Ltd. Address before: Hsinchu Science Industrial Park, Taiwan Applicant before: Guolian Photoelectric Science and Technology Co., Ltd. |
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