CN101055906A - High-brightness LED and its making method - Google Patents
High-brightness LED and its making method Download PDFInfo
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- CN101055906A CN101055906A CNA2006100724210A CN200610072421A CN101055906A CN 101055906 A CN101055906 A CN 101055906A CN A2006100724210 A CNA2006100724210 A CN A2006100724210A CN 200610072421 A CN200610072421 A CN 200610072421A CN 101055906 A CN101055906 A CN 101055906A
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- epitaxial layer
- emitting diode
- brightness led
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Abstract
The invention provides a high-brightness LED, comprising: a transparent substrate, which is formed by materials including aluminium arsenide gallium (AlxGa1-xAs); a luminescent layer, which grows up on the transparent substrate, and is formed by materials including aluminum phosphide gallium indium (AlGaInP); a window layer, which grows up on this luminescent layer, and is formed by materials including GaP; an upper electrode layer, which forms an ohm contact with the window layer; as well as a lower electrode layer, which forms an ohm contact with the transparent substrate, in which the x value in molecular formula AlxGa1-xAs of the transparent substrate material is set as a numerical value which makes the transparent substrate to have a transmissivity with high energy gap to the specific wavelength light sent by the luminescent layer.
Description
Technical field
The present invention relates to a kind of light-emitting diode and manufacture method thereof, relate in particular to a kind of high brightness LED and manufacture method thereof, can solve the problem of the photon of substrate absorption in the past.
Background technology
Light-emitting diode is a kind of semiconductor element, with p type and n N-type semiconductor N be combined into.When by minimum electric current, can give out light because of the compound of electronics and electric hole, different with the principle of general white heat bulb or fluorescent tube.But when light in semiconductor is inner produce after, having only small part can break away from semiconductor surface becomes and can utilize light source, is most ofly promptly absorbed in semiconductor inside again.How overcoming this shortcoming, is very important problem.
AlGaInP (AlGaInP) epitaxial layer of in the past growing on GaAs (GaAs) substrate is to obtain high brightness LED (LED).But because GaAs material itself at room temperature has the low energy gap of 1.424ev, therefore, the light that is sent after the AlGaInP quaternary compound is stimulated can be absorbed by substrate, and causes the brightness of light-emitting diode to decline to a great extent.Though, in No. 5376580 patent of United States Patent (USP), disclose, after element crystals growth of heap of stone was finished, substrate that will extinction was removed fully, and then with wafer in conjunction with (wafer bonding) mode, with combination of elements to gallium phosphide (GaP) transparency carrier.In addition, in No. 5008718 patent of United States Patent (USP), disclose, on substrate, utilize crystals growth method of heap of stone to finish element, on element, build the thicker gallium phosphide transparency carrier of crystals growth one deck then again, and the substrate of extinction is removed, then regrowth window layer.But the technology of these technology is not only complicated, and the degree of difficulty height, and its cost also thereby improve.
Therefore, how to develop a kind of high brightness LED and manufacture method thereof,, then become the major subjects that the present invention will study intensively to solve the above problems.
Summary of the invention
Therefore, main purpose of the present invention is for providing a kind of high brightness LED and manufacture method thereof, it is by each the elemental composition ratio in the control III-V compound semiconductor, and the light emitting diode base plate that acquisition has the high grade of transparency, to reduce the luminance loss of luminescent layer.
Another object of the present invention is that growth improves the electric current diffusivity thus by the formed window layer of the thicker III-V compound semiconductor of the high grade of transparency, low resistance and thickness on luminescent layer, and this window layer and electrode form ohmic contact.
For achieving the above object, the invention provides a kind of high brightness LED, comprising: transparency carrier, it is by comprising aluminum gallium arsenide (Al
xGa
1-xAs) material forms; Luminescent layer, it is to grow on this transparency carrier, and is formed by the material that comprises AlGaInP (AlGaInP); The window layer, it is to grow on this luminescent layer, and is formed by the material that comprises GaP; Upper electrode layer, itself and this window layer forms ohmic contact; And lower electrode layer, itself and this transparency carrier forms ohmic contact, wherein, and the molecular formula Al of this transparency carrier material
xGa
1-xX value among the As is that the emission wavelength with this luminescent layer changes, and this x value is to be set to make this transparency carrier, light to specific wavelength that this luminescent layer is sent out, numerical value with light transmittance of high energy gap, and this window layer is to be used for promoting the electric current diffusion effect of this upper electrode layer conducting to luminescent layer, and increases the side light emission rate.
By the present invention following description of drawings and embodiment, aforementioned and other purpose, feature, viewpoint and advantage of the present invention will be more clear.
Description of drawings
Figure 1A to Fig. 1 E is the schematic diagram that shows the implementation step of the fabrication method of high-brightness light emitting diode of a specific embodiment according to the present invention.
Fig. 2 is the cutaway view that shows the high brightness LED of a specific embodiment according to the present invention.
Among the figure, the 1st, transparency carrier; The 2nd, luminescent layer; The 3rd, the window layer; The 4th, upper electrode layer; The 5th, lower electrode layer; The 10th, substrate; 20 is first epitaxial layers; 30 is second epitaxial layers; 40 is the 3rd epitaxial layers; 50 is first electrode layers; The 60th, the second electrode lay.
Embodiment
In more detailed mode preferred embodiment of the present invention is described below with reference to the accompanying drawings.
Figure 1A to Fig. 1 E is the schematic diagram that shows the implementation step of the fabrication method of high-brightness light emitting diode of a specific embodiment according to the present invention.Shown in Figure 1A, at first, utilize liquid built crystalline substance (Liquid PhaseEpitaxy, LPE) technology is on substrate 10, long brilliant and form first epitaxial layer 20, the thickness of this first epitaxial layer 20 is about 50 to 100 microns (μ m), wherein this first epitaxial layer 20 is the III-V group element compound with the material of substrate 10, and for example the material of this substrate 10 is GaAs (GaAs), and the material of this first epitaxial layer 20 then is aluminum gallium arsenide (AlGaAs).Shown in Figure 1B, on first epitaxial layer 20, utilize the organic metal gas phase to build brilliant method (MOVPE), second epitaxial layer 30 of growing, this second epitaxial layer 30 is by the formed multilayer epitaxial structure of the material that comprises AlGaInP (AlGaInP), with as luminescent layer, and this luminescent layer can have the structure of any AlGaInP quaternary compound in the past.Shown in Fig. 1 C, utilize organic metal gas phase brilliant method (MOVPE) of heap of stone or hydride gas phase brilliant method (HVPE) of heap of stone, growth regulation three epitaxial layers 40 on second epitaxial layer 30, and the material of the 3rd epitaxial layer 40 is gallium phosphide (GaP), and its thickness range is about 2 to 150 microns.Shown in Fig. 1 D, utilize etching technique that GaAs (GaAs) substrate 10 is removed.Shown in Fig. 1 E, at the upper surface of aforementioned the 3rd epitaxial layer 40 and the lower surface of first epitaxial layer 20, form upper and lower metal electrode layer respectively, and this upper and lower metal electrode layer has specific pattern respectively, and be called first electrode layer 50 and the second electrode lay 60.The epitaxial layer that first, second electrode layer is adjacent forms ohmic contact.
In the abovementioned steps, because the material of this substrate 10 is GaAs, and the energy gap of GaAs itself is less, is generally 1.424eV, and the light that makes this second epitaxial layer 30 be sent all can be absorbed, and causes luminous efficiency significantly to reduce.Therefore, in fabrication method of high-brightness light emitting diode of the present invention, be that GaAs (GaAs) substrate 10 with this extinction removes.In addition, the aluminum gallium arsenide of this first epitaxial layer 20 is Al
xGa
1-xAs, wherein, if the x value is big more, then the energy gap of aluminum gallium arsenide is big more.Because the transparency is a light at specific wavelength that this luminescent layer is sent out, therefore, can cooperate the emission wavelength of this second epitaxial layer 30 to decide the Al of this first epitaxial layer 20
xGa
1-xX value among the As, this x value are to be set to make this first epitaxial layer 20, the light of the specific wavelength that this second epitaxial layer 30 is sent, the numerical value with high grade of transparency.For instance, be formed second epitaxial layer 30 of material for the aluminium arsenide gallium indium, the x value can change between in 0.45 to 0.9.If x is made as about 0.8, all penetrable second epitaxial layer 30 of light of the various wavelength that sent by AlGaInP (AlGaInP) then.
Fig. 2 is the cutaway view that shows the high brightness LED of a specific embodiment according to the present invention.As shown in Figure 2, high brightness LED of the present invention is transparency carrier 1, luminescent layer 2 and window layer 3 lamination and forming from the bottom to top in turn, and these window layer 3 upper surfaces and electrode of metal layer form ohmic contact 4, and this transparency carrier 1 lower surface and metal lower electrode layer 5 form ohmic contact.
In the aforementioned high brightness LED of the present invention, this transparency carrier 1 is aluminum gallium arsenide (Al
xGa
1-xAs) epitaxial layer, and its x value is to be set to make this transparency carrier 1, to the light of this luminescent layer 2 specific wavelength that sends, numerical value with light transmittance of high energy gap.This luminescent layer 2 is the ray structures by the formed AlGaInP in the past of III-V compound semiconductor quaternary compound, this luminescent layer 2 includes active layer (activelayer) and the basic structure of layer (confinement layer) of forbidding manufacture up and down at least, in order to realize the lighting function of this luminescent layer 2.The translucent construction with high energy gap that this window layer 3 is made up of the GaP compound in order to the electric current diffusion effect of enhancement upper electrode layer 4 conductings to luminescent layer 2, and increases the side light emission rate.In addition, aforesaid each electrode layer can be by transparent and have the good oxide of conductive characteristic and formed, to increase the brightness of light-emitting diode of the present invention.
To those skilled in the art, the present invention can make various modifications and changes significantly and not break away from the spirit and scope of the present invention.Therefore, the present invention includes those modifications and variation, and it is included in all in claim scope of the present invention and the equivalency range thereof.
Claims (13)
1. high brightness LED comprises:
Transparency carrier, it is by comprising aluminum gallium arsenide (Al
xGa
1-xAs) material forms;
Luminescent layer, it is to grow on this transparency carrier, and is formed by the material that comprises AlGaInP (AlGaInP);
The window layer, it is to grow on this luminescent layer;
Upper electrode layer, it is to form ohmic contact with this window layer; And
Lower electrode layer, it is to form ohmic contact with this transparency carrier,
Wherein, the molecular formula Al of this transparency carrier material
xGa
1-xX value among the As is to be set to make this transparency carrier, to the light of specific wavelength that this luminescent layer sends, has the numerical value of the light transmittance of high energy gap, and this window layer is to be used for promoting the electric current diffusion effect of this upper electrode layer conducting to this luminescent layer.
2. high brightness LED as claimed in claim 1, wherein, the thickness of described transparency carrier is between 50 to 100 microns (μ m).
3. high brightness LED as claimed in claim 1, wherein, described window layer is by the formed high energy effusion of the material that comprises III-V compound semiconductor photo structure.
4. high brightness LED as claimed in claim 3, wherein, the material of described window layer is gallium phosphide (GaP).
5. high brightness LED as claimed in claim 4, wherein, the thickness of described window layer is between 2 to 150 microns.
6. the manufacture method of high brightness LED comprises:
(a) utilize crystal technique of heap of stone, growth comprises aluminum gallium arsenide (Al on substrate
xGa
1-xAs) first epitaxial layer, wherein, the Al of described first epitaxial layer
xGa
1-xX value among the As is to be set to make described transparency carrier, to the light of specific wavelength that described luminescent layer sends, has the numerical value of the light transmittance of high energy gap;
(b) utilize organic metal gas phase crystallisation, growth comprises the second multilayer epitaxial layer of AlGaInP (AlGaInP) on described first epitaxial layer, as the ray structure layer;
(c) utilize organic metal gas phase crystallisation, growth comprises the 3rd epitaxial layer of III-V compound semiconductor on described second epitaxial layer;
(d) utilize etching technique that described substrate is removed; And
(e) upper surface at described the 3rd epitaxial layer forms the electrode layer with specific pattern, with the top electrode as described high brightness LED; And
(f) lower surface at described first epitaxial layer forms the electrode layer with specific pattern, and with the bottom electrode as described high brightness LED, wherein, the epitaxial layer that upper and lower electrode layer is adjacent forms ohmic contact.
7. fabrication method of high-brightness light emitting diode as claimed in claim 6, wherein, in described (a) step, described crystal technique of heap of stone is the liquid built crystal technique.
8. fabrication method of high-brightness light emitting diode as claimed in claim 6, wherein, in described (a) step, the material of described substrate is to comprise GaAs (GaAs).
9. fabrication method of high-brightness light emitting diode as claimed in claim 6, wherein, in described (a) step, the thickness of described first epitaxial layer is between 50 to 100 microns (μ m).
10. fabrication method of high-brightness light emitting diode as claimed in claim 6, wherein, in described (a) step, the scope of described x value is between 0.45 to 0.9.
11. fabrication method of high-brightness light emitting diode as claimed in claim 10, wherein, described x value is 0.8.
12. fabrication method of high-brightness light emitting diode as claimed in claim 6, wherein, in described (c) step, the material of described the 3rd epitaxial layer comprises gallium phosphide (GaP).
13. fabrication method of high-brightness light emitting diode as claimed in claim 12, wherein, the thickness of described the 3rd epitaxial layer is between 2 to 150 microns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006100724210A CN101055906A (en) | 2006-04-11 | 2006-04-11 | High-brightness LED and its making method |
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|---|---|---|---|
| CNA2006100724210A CN101055906A (en) | 2006-04-11 | 2006-04-11 | High-brightness LED and its making method |
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| CN101055906A true CN101055906A (en) | 2007-10-17 |
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| CNA2006100724210A Pending CN101055906A (en) | 2006-04-11 | 2006-04-11 | High-brightness LED and its making method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102104095A (en) * | 2009-12-22 | 2011-06-22 | Lg伊诺特有限公司 | Light emitting device, light emitting device package, method of manufacturing light emitting device and lighting system |
| CN102646771A (en) * | 2008-05-08 | 2012-08-22 | Lg伊诺特有限公司 | Light-emitting element |
| CN104934512A (en) * | 2011-04-26 | 2015-09-23 | 株式会社东芝 | Semiconductor light emitting device |
-
2006
- 2006-04-11 CN CNA2006100724210A patent/CN101055906A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102646771A (en) * | 2008-05-08 | 2012-08-22 | Lg伊诺特有限公司 | Light-emitting element |
| CN102646771B (en) * | 2008-05-08 | 2016-01-20 | Lg伊诺特有限公司 | Luminescent device |
| CN102104095A (en) * | 2009-12-22 | 2011-06-22 | Lg伊诺特有限公司 | Light emitting device, light emitting device package, method of manufacturing light emitting device and lighting system |
| US8558215B2 (en) | 2009-12-22 | 2013-10-15 | Lg Innotek Co., Ltd. | Light emitting device, light emitting device package, method of manufacturing light emitting device and lighting system |
| CN104934512A (en) * | 2011-04-26 | 2015-09-23 | 株式会社东芝 | Semiconductor light emitting device |
| CN104934512B (en) * | 2011-04-26 | 2017-11-21 | 株式会社东芝 | Semiconductor light-emitting elements |
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