CN1755496A

CN1755496A - Device and method for display memory using manipulation of mechanical response

Info

Publication number: CN1755496A
Application number: CN 200510105057
Authority: CN
Inventors: 克拉伦斯·徐; 马尼什·科塔里
Original assignee: IDC LLC
Current assignee: IDC LLC
Priority date: 2004-09-27
Filing date: 2005-09-26
Publication date: 2006-04-05

Abstract

Embodiments of an exemplary MEMS interferometric modulator comprise a movable layer and a fixed layer separated by an air gap. A driving scheme employs row/column actuation protocols which maintain voltages to the MEMS interferometric modulator that are above or below the voltage range necessary to place the MEMS interferometric modulator within a ''hysteresis window'' or ''stability window.'' Stable operation of the MEMS interferometric modulator is achieved by selecting mechanical design features that optimize the actuation and release times of the interferometric modulator. Some of the features affecting the release and actuation times include altering post spacing, altering internal stress or tension of the movable layer, altering the thickness or composition of the movable layer, altering the bulkiness of the tethers, perforating the movable layer and providing vias in the fixed layer.

Description

Be used to use the device and method of the display memory of manipulation of mechanical response

Technical field

Technical field of the present invention relates to MEMS (micro electro mechanical system) (MEMS).

Background technology

MEMS (micro electro mechanical system) (MEMS) comprises micromechanical component, driver and electronic component.Micromechanical component can adopt deposition, etching or other several portions that can etch away substrate and/or institute's deposited material layer maybe can add several layers and make with the micromachined technology that forms electricity and electromechanical assembly.One type MEMS device is called as interferometric modulator.Interferometric modulator can comprise the pair of conductive plate, one of them or the two all can be transparent whole or in part and/or be reflectivity, and can relative motion when applying a suitable electric signal.One of them plate can comprise a quiescent layer that is deposited on the substrate, and another plate can comprise a metal partion (metp) that separates by a clearance and this quiescent layer.Said apparatus is with a wide range of applications, and in this technology, utilizes and/or revises the characteristic of these types of devices so that its performance can be used for improving existing product and makes still undeveloped at present new product will be rather useful.

Summary of the invention

System of the present invention, method and device all have many aspects, and arbitrary single aspect all can not determine its desired characteristic separately.Now, its main characteristic is carried out brief discussion, this not delimit the scope of the invention.Checking this argumentation, especially reading title for after the part of " embodiment ", how people provides the advantage that is better than other display device if can understanding feature of the present invention.

An embodiment comprises a kind of MEMS device, and described MEMS device comprises: one comprises the fixed bed of one first electrode; Once structure with one away from the primary importance of described first electrode with one near displaceable layers mobile between the second place of described first electrode, when described displaceable layers was in described primary importance, described displaceable layers and described fixed bed formed a cavity; And second electrode that is connected to described displaceable layers.A mobile voltage difference that is based between described first and second electrode of described displaceable layers, and described displaceable layers is configured to move to the described second place and move to described primary importance with one second mean speed from the described second place from described primary importance with one first mean speed.Described first and second mean speed is inequality.

Another embodiment comprises a kind of MEMS device, and it comprises: first mobile member, its be used to make a displaceable layers one away from the primary importance and of described first mobile member near moving between the second place of described first mobile member; Second mobile member, it is used to make described displaceable layers to move between described first and second position, and when described displaceable layers was in described primary importance, described displaceable layers and described first mobile member formed a cavity; And the 3rd mobile member, it is used to make described displaceable layers to move to the described second place and move to described primary importance with one second mean speed from the described second place from described primary importance with one first mean speed.Described first and second mean speed is inequality.

Another embodiment comprise a kind of with interferometric modulator array excitation repeatedly to show the method for an individual data frame, described method comprises: receive a data-signal that is used to encourage one or more interferometric modulators during corresponding to the time cycle of a single frame one; Use a potential difference (PD) to encourage described one or more interferometric modulator, so that described interferometric modulator moves to an actuated state with one first mean speed; And discharge described one or more interferometric modulators, so that described interferometric modulator moves towards release conditions from described actuated state with second a different mean speed.

Another embodiment comprises that a kind of driving one interferometric modulator element is to show the method for a Frame.Described method comprises: receive a data-signal one during corresponding to the time cycle of a single frame display cycle and show for described interferometric modulator; And apply one first potential difference (PD) to described interferometric modulator display elements on described single frame display cycle period ground.Described interferometric modulator all moves towards release conditions from an actuated state when applying described first potential difference (PD), and when applying one second potential difference (PD) to described interferometric modulator, described interferometric modulator moves to described actuated state before arriving described release conditions.

Another embodiment comprises that a kind of delegation's interferometric modulator display elements in a display component array writes the method for video data.Described method comprises: use one first potential difference (PD) that one first group of video data is write to the described row of described array so that in the described interferometric modulator element some moves to an actuated state at least; Discharge the interferometric modulator element in the described row of described array, so that described interferometric modulator element moves towards described release conditions from described actuated state lentamente; And use a potential difference (PD) that described first group of video data re-writed the described row of described array, so that before described interferometric modulator arrived described release conditions, described interferometric modulator element was returned described actuated state.

Another embodiment comprise a kind of with interferometric modulator array excitation repeatedly to show the method for an individual data frame.Described method comprises: receive a data-signal that is used to encourage one or more interferometric modulators during corresponding to the time cycle of a single frame one; Use a potential difference (PD) to encourage described interferometric modulator display elements, so that described interferometric modulator moves to release conditions; And the described interferometric modulator display elements of excitation, so that described interferometric modulator moves towards an actuated state away from described release conditions; And discharge described interferometric modulator display elements again, so that before arriving described actuated state, described interferometric modulator moves back to described release conditions.

Another embodiment comprises that a kind of driving one interferometric modulator element is to show the method for a Frame.Described method comprises: receive a data-signal one during corresponding to the time cycle of a single frame display cycle and show for described interferometric modulator; And apply one first potential difference (PD) to described interferometric modulator display elements on described single frame display cycle period ground.Described interferometric modulator all moves towards an actuated state from release conditions when applying described first potential difference (PD), and when applying one second potential difference (PD) to described interferometric modulator, described interferometric modulator moves to described release conditions before arriving described actuated state.

Another embodiment comprises that a kind of delegation's interferometric modulator display elements in a display component array writes the method for video data.Described method comprises: use a potential difference (PD) that one first group of video data is write to the described row of described array so that in the described interferometric modulator element some moves to release conditions at least; Encourage the interferometric modulator element in the described row of described array, so that described interferometric modulator element moves towards described actuated state away from described release conditions; And use a potential difference (PD) that described first group of video data re-writed the described row of described array, so that before described interferometric modulator element arrived described actuated state, described interferometric modulator element was returned described release conditions.

Another embodiment comprises a kind of method of manufacturing one MEMS device.Described method comprises: formation one comprises the fixed bed of one first electrode; Form a displaceable layers, described displaceable layers through structure with one away from the primary importance of described first electrode with one near mobile between the second place of described first electrode, when described displaceable layers was in described primary importance, described displaceable layers and described fixed bed formation one comprised the cavity of a gas; And formation one is connected to second electrode of described displaceable layers.A mobile voltage difference that is based between described first and second electrode of described displaceable layers, and described displaceable layers is made into one first mean speed and moves to the described second place and move to described primary importance with one second mean speed from the described second place from described primary importance.Described first and second mean speed is inequality.

Another embodiment comprises and a kind ofly is used to drive an interferometric modulator array repeatedly to show the equipment of an individual data frame.Described equipment comprises: receiving member, and it is used for receiving one during corresponding to the time cycle of a single frame one and is used to data-signal that one or more interferometric modulators are moved between first and second state; First mobile member, it is used to use a current potential official post interferometric modulator display elements to move to described second state from described first state; Second mobile member, it is used to use the described interferometric modulator display elements of a current potential official post to move towards described first state from described second state; And the 3rd mobile member, it was used for before described interferometric modulator arrives described second state, used the described interferometric modulator display elements of a current potential official post to move to described second state.

Description of drawings

Fig. 1 is first-class axle figure, it shows the part of an embodiment of an interferometric modulator display, wherein one of one first interferometric modulator removable reflection horizon is in an off-position, and a removable reflection horizon of one second interferometric modulator is in an excited target position.

Fig. 2 is a system block diagram, and it shows that one comprises an embodiment of the electronic installation of one 3 * 3 interferometric modulator displays.

Fig. 3 is the removable mirror position of an exemplary embodiment of the interferometric modulator shown in Figure 1 of working and the graph of a relation of the voltage that applies in a stability window.

Fig. 4 is one group of synoptic diagram that can be used for driving the row and column voltage of interferometric modulator display.

Fig. 5 A is presented at an exemplary frame of display data in 3 * 3 interferometric modulator displays shown in Figure 2.

Fig. 5 B demonstration can be used for writing the capable signal of frame shown in Fig. 5 A and an exemplary sequential chart of column signal.

Fig. 6 A is the sectional view of a device shown in Figure 1.

Fig. 6 B is a sectional view of an alternate embodiment of an interferometric modulator.

Fig. 6 C is a sectional view of another alternate embodiment of an interferometric modulator.

Fig. 7 is the removable mirror position of an exemplary embodiment of interferometric modulator shown in Figure 1 and the graph of a relation of the voltage that applies, and the work of this interferometric modulator does not utilize the hysteresis property of modulator.

Fig. 8 is the synoptic diagram of one group of row voltage and column voltage, this group row voltage and column voltage can be used for driving an interferometric modulator display so that when discharging row voltage modulator drift to release conditions.

Fig. 9 shows that one has the long actuation duration and the operation response of the modulator that drives according to capable voltage among Fig. 8 and column voltage.

Figure 10 shows that one has short release time and the operation response of the modulator that drives according to capable voltage shown in Figure 8 and column voltage.

Figure 11 A and 11B show and change for how much of an intercolumniation, thereby it can influence the operation response that actuation duration of modulator and release time improves modulator.

Figure 12 A and 12B show that how much of tension force of displaceable layers change, thereby it can influence the operation response that actuation duration of modulator and release time improves modulator.

Figure 13 A and 13B show that how much of thickness of displaceable layers change, thereby it can influence the operation response that actuation duration of modulator and release time improves modulator.

Figure 14 A and 14B show that how much of tethers size of displaceable layers change, thereby it can influence the operation response that actuation duration of modulator and release time improves modulator.

Figure 15 A and 15B show that 1 in the displaceable layers changes for how much, thereby it can influence the operation response that actuation duration of modulator and release time improves modulator.

Figure 16 A and 16B show that 1 in the surface of fixed bed changes for how much, thereby it can influence the operation response that actuation duration of modulator and release time improves modulator.

Figure 17 shows the timing effect of the dynamic video in the modulator array, and this modulator array is to drive to drift about towards release conditions when row selection signal is undone according to capable voltage shown in Figure 8 and column voltage.

Figure 18 is the synoptic diagram of one group of row voltage and column voltage, modulator is expert at drift to actuated state when voltage is released thereby this group row voltage and column voltage can be used for driving an interferometric modulator display.

Figure 19 shows that one has long release time and the operation response of the modulator that drives according to capable voltage shown in Figure 180 and column voltage.

Figure 20 shows that one has the short actuation duration and the operation response of the modulator that drives according to capable voltage among Figure 18 and column voltage.

Figure 21 shows the timing effect of the dynamic video in the modulator array, and this modulator array is to drive according to capable voltage and column voltage among Figure 18, so that drift to actuated state when cancelling the row selection.

Figure 22 A and 22B are system block diagrams, and it shows that one comprises an embodiment of the visual display unit of a plurality of interferometric modulators.

Embodiment

One exemplary MEMS interferometric modulator comprises a displaceable layers and a fixed bed that separates by an air gap.One drive scheme uses row/row excitation protocol, and described row/row excitation protocol is kept above the voltage that is applied to the MEMS interferometric modulator or is lower than the MEMS interferometric modulator is placed required voltage range in one " lag windwo " or " stability window ".By selecting to improve the excitation of interferometric modulator and the Machine Design characteristic of release time, can realize the stable operation of MEMS interferometric modulator.Generally speaking, the characteristic that makes displaceable layers have more compliance can increase the release time and the actuation duration of reducing.People find, and when drive scheme depended at least in part that displaceable layers slowly drifts to release conditions when discharging row voltage, one to have more the displaceable layers of compliance preferable.Similarly, make the not too submissive characteristic of displaceable layers can increase the actuation duration and the release time of reducing.When displaceable layers slowly drifted to actuated state when drive scheme depends at release row voltage at least in part, a not too submissive displaceable layers may be preferable.Some can influence discharge and the characteristic of actuation duration comprises the bulkiness of the thickness that changes an intercolumniation, the internal stress that changes displaceable layers or tension force, change displaceable layers and composition, change tethers, with the displaceable layers perforation and path is set in fixed bed.

Hereinafter explanation is at some embodiments of the invention.But, the present invention can implement by being permitted different ways.In this explanation, can be with reference to accompanying drawing, in the accompanying drawings, identical parts use identical number-mark from start to finish.Find out easily that according to following explanation the present invention can be at arbitrary display image-no matter be dynamic image (for example video) or still image (for example rest image) of being configured to, no matter be character image or picture-device in implement.More specifically, the present invention can implement in inferior numerous kinds of electronic installations or is associated with these electronic installations for example (but being not limited to): mobile phone, wireless device, personal digital assistant (PDA), handheld computer or portable computer, gps receiver/omniselector, camera, the MP3 player, video camera, game machine, wrist-watch, clock, counter, TV monitor, flat-panel monitor, computer monitor, automotive displays (for example mileometer display etc.), driving cabin control device and/or display, camera scenery display (for example backsight camera display of vehicle), electronic photo, electronics billboard or label, projector, building structure, packing and aesthetic structures (for example image display on jewelry).The MEMS device that has similar structures with MEMS device described herein also can be used for non-display application, for example is used for electronic switching device.

Show an interferometric modulator display embodiment who contains an interfere type MEMS display element among Fig. 1.In these devices, pixel is in bright state or dark state.Bright opening (on) or open under (open) state, display element reflexes to the user with most of incident visible light.Be in dark (close (off) or close (closed)) state following time, display element reflects the incident visible light to the user hardly.Decide on different embodiment, can put upside down the light reflectance properties of "on" and "off" state.The MEMS pixel can be configured to mainly reflect under selected color, also can realize colored the demonstration except that black and white.

Fig. 1 is first-class axle figure, and it shows two adjacent pixels in a series of pixels of a visual displays, and wherein each pixel comprises a MEMS interferometric modulator.In certain embodiments, an interferometric modulator display comprises a row/column array that is made of these interferometric modulators.Each interferometric modulator comprises a pair of reflection horizon, and this is positioned to each other to have a variable-sized optical resonance cavity at a distance of a variable and controlled distance at least to form one to the reflection horizon.In one embodiment, one of them reflection horizon can be moved between the two positions.Be referred to herein as on the primary importance of release conditions, the local reflex layer that the position of this displaceable layers distance one is fixed is far away relatively.On the second place, the position of this displaceable layers is more closely near this local reflex layer.Decide position according to removable reflection horizon, from the incident light of this two layers reflection can with mutually long or mutually the mode of disappearing interfere, thereby form the mass reflex or the non-reflective state of each pixel.

The pixel array portion that shows in Fig. 1 comprises two adjacent interferometric modulator 12a and 12b.In the interferometric modulator 12a in left side, demonstration one movably high reflection layer 14a is in an off-position, and this off-position is apart from fixing local reflex layer 16a one preset distance.In the interferometric modulator 12b on right side, demonstration one movably high reflection layer 14b is in an excited target position, and this excited target position is near fixing local reflex layer 16b.

Fixed bed 16a, 16b conduct electricity, the part is transparent and local is reflectivity, and can the layer of one or more respectively do for oneself chromium and tin indium oxides be made by for example depositing on a transparent substrates 20.Described each layer is patterned into parallel band, and can form the column electrode in the display device, as further specifying hereinafter.

Displaceable layers

14a, 14b can form by one or more depositing metal layers that is deposited on pillar 18 tops (and column electrode 16a, 16b quadrature) and and be deposited on the series of parallel band that the middle expendable material between the pillar 18 constitutes.After expendable material was etched, these deformable metal levels separated with the air gap 19 of the metal level of fixing by a regulation.These deformable layer can use one to have high conductivity and reflexive material (for example aluminium), and those bands can form the row electrode in the display device.

When not applying voltage, cavity 19 remains between a layer 14a, the 16a, and deformable layer is in the mechanical relaxed state shown in pixel 12a among Fig. 1.Yet after a selected row and column applies potential difference (PD), the capacitor that forms at the respective pixel place of described row and column electrode intersection is recharged, and electrostatic force pulls to these electrodes together.If voltage is enough high, then displaceable layers generation deformation, and be forced on the fixed bed (can on fixed bed, deposit a dielectric material (not shown in this Figure), preventing short circuit, and the control separation distance), shown in the pixel 12b on right side among Fig. 1.Regardless of the potential difference (PD) polarity that is applied, the behavior is all identical.This shows, may command reflection and row/row of non-reflective pixel state encourage to traditional LCD and other display techniques in used row/row encourage similar in many aspects.

Fig. 2 to Fig. 5 B shows the exemplary methods and the system that use an interferometric modulator array in a display application.Fig. 2 is a system block diagram, and this figure shows that one can embody an embodiment of the electronic installation of each side of the present invention.In this exemplary embodiment, described electronic installation comprises a processor 21, and it can be any general purpose single-chip or multicore sheet microprocessor, for example ARM, Pentium ^, Pentium II ^, PentiumIII ^, Pentium IV ^, Pentium ^Pro, 8051, MIPS ^, Power PC ^, ALPHA ^, or any special microprocessor, for example digital signal processor, microcontroller or programmable gate array.According to convention in the industry, processor 21 can be configured to carry out one or more software modules.Except that carrying out an operating system, also this processor can be configured to carry out one or more software applications, comprise web browser, telephony application, e-mail program or any other software application.

In one embodiment, processor 21 also is configured to communicate with an array controller 22.In one embodiment, this array control unit 22 comprises a horizontal drive circuit 24 and the column drive circuit 26 that signal is provided to a pel array 30.Array sectional view shown in Fig. 1 illustrates with line 1-1 in Fig. 2.For the MEMS interferometric modulator, described row/row excitation protocol both can utilize the hysteresis property that also can not utilize these devices shown in Figure 3.For utilizing this hysteresis property, for example may needing, one 10 volts potential difference (PD) makes a displaceable layers be deformed into actuated state from release conditions.Yet, when described voltage when this value reduces, reduce when being back to below 10 volts at described voltage, described displaceable layers will keep its state.In the exemplary embodiment of Fig. 3, before voltage drop was low to moderate below 2 volts, displaceable layers can not discharge fully.Therefore, in example shown in Figure 3, exist one to be approximately the voltage range that 3-7 lies prostrate, exist one to apply voltage window in this voltage range, described device is stabilized in and discharges or actuated state in this window.Be referred to as " lag windwo " or " stability window " in this article.For an array of display with hysteresis characteristic shown in Figure 3, OK/the row excitation protocol can be designed to be expert at during the gating, the pixel that is energized is applied about 10 a volts voltage difference to selected in current, and to d/d pixel being applied one near 0 volt voltage difference.After gating, it is poor to apply about 5 a volts steady state voltage to pixel, and gating makes its residing any state so that its maintenance is expert at.After being written into, in this example, each pixel is all born one and is in " stability window " interior potential difference (PD) that 3-7 lies prostrate.This characteristic makes pixel design shown in Figure 1 be stabilized in an existing foment or release conditions under identical the voltage conditions that applies.Because each pixel of interferometric modulator, no matter be in foment or release conditions, in fact all be one by described fixed reflector and capacitor that mobile reflection horizon constituted, therefore, this steady state (SS) can be kept under the voltage in the lag windwo and consumed power hardly.If the current potential that is applied is constant, then there is not electric current to flow into pixel basically.

In the typical case uses, can be by determining that according to one group of desired actuated pixels in first row one group of row electrode forms a display frame.After this, a horizontal pulse is put on the electrode of the 1st row, thereby encourage the pixel corresponding with determined alignment.After this, determined one group of row electrode is become corresponding with desired one group of actuated pixels in second row.After this, with a pulse put on the 2nd the row electrode, thereby according to determined row electrode encourage the 2nd the row in respective pixel.The pixel of the 1st row is not subjected to the influence of the pulse of the 2nd row, thereby the state that keeps it to set at the impulse duration of the 1st row.The property mode repeats above-mentioned steps to the row of whole series in order, to form described frame.Usually, repeating this process continuously by the speed with a certain desired frame number/second to refresh and/or upgrade these frames with new video data.Also have a variety of row and the row electrodes that are used to drive pel array also to be known, and can use with the present invention by people with the agreement that forms display frame.

Fig. 4,5A and Fig. 5 B show a kind of possible excitation protocol that is used for forming a display frame on 3 * 3 arrays shown in Figure 2.Fig. 4 shows one group of possible row and column voltage level of can be used for having the pixel of hysteresis curve shown in Figure 3.In the embodiment of Fig. 4, encourage a pixel to comprise and be set to-V being listed as accordingly _Bias, and will go accordingly and be set to+Δ V, it can correspond respectively to-5 volts and+5 volts.Discharging pixel then is to be set to+V by being listed as accordingly _BiasAnd will go accordingly and be set to identical+Δ V, form one 0 volts potential difference (PD) at described pixel two ends thus and realize.In the row of 0 volt of those wherein capable voltages maintenance, pixel is stable at its initial residing state, and is in+V with these row _BiasStill-V _BiasIrrelevant.Equally as shown in FIG. 4, should be appreciated that, can use polarity and above-mentioned opposite polarity voltage, for example encourage a pixel to comprise and be set to+V being listed as accordingly _Bias, and will go accordingly and be set to a Δ V.In this embodiment, discharging pixel is to be set to-V by being listed as accordingly _BiasAnd will go accordingly and be set to identical-Δ V, form one 0 volts potential difference (PD) at described pixel two ends thus and realize.

Fig. 5 B is the sequential chart of a series of row of demonstration and column signal, and those signals put on 3 * 3 arrays shown in Figure 2, and it will form the demonstration shown in Fig. 5 A and arrange that wherein actuated pixels is non-reflectivity.Before writing the frame shown in Fig. 5 A, pixel can be in any state, and in this example, all row all are in 0 volt, and all row all be in+5 volts.Under these institute's voltages that apply, all pixels are stable at its existing actuated state or release conditions.

In the frame shown in Fig. 5 A, pixel (1,1), (1,2), (2,2), (3,2) and (3,3) are encouraged.For realizing this effect, during one " line time " of the 1st row, the 1st row and the 2nd row are set at-5 volts, the 3rd row are set at+5 volts.This can not change the state of any pixel, because all pixels all remain in the stability window of 3-7 volt.After this, rise to 5 volts of pulses that are back to 0 volt that descend again then by one from 0 volt and come gating the 1st row.Actuate pixel (1,1) and (1,2) and discharge pixel (1,3) thus.Other pixel in the array is all unaffected.For the 2nd row is set at desired state, the 2nd row are set at-5 volts, the 1st row and the 3rd row are set to+5 volts.After this, apply identical strobe pulse with actuate pixel (2,2) and discharge pixel (2,1) and (2,3) to the 2nd row.Equally, other pixel in the array is all unaffected.Similarly, by the 2nd row and the 3rd row are set at-5 volts, and be listed as the 1st be set at+5 volts to the 3rd capable the setting.The strobe pulse of the 3rd row is set at the state shown in Fig. 5 A with the 3rd row pixel.After writing incoming frame, the row current potential is 0, and the row current potential can remain on+5 or-5 volts, and after this demonstration will be stable at the layout shown in Fig. 5 A.Should be appreciated that, can use identical programs the array that constitutes by tens of or hundreds of row and columns.The sequential, order and the level that should also be clear that the voltage that is used to implement the row and column excitation can alter a great deal in above-described General Principle, and above-mentioned example only is exemplary, and any actuation voltage method all can be used with the present invention.For example, the reversal of poles that is used for the capable gating signal of one first frame can be used for next frame.

Still referring to Fig. 5 A, write operation 1 carries out each row to row 3 voluntarily in regular turn, returns then to be expert at and writes new data on 1.Write data and return row 1 at modulator and be called T update time in this article with the time interval that writes between new data or time that the modulator of legacy data writing line again 1 is used to row 1 _uWherein shown information keeps the constant time interval to be called frame period T _fFor example, the frame rate that dynamic video can 30Hz shows that this is 33.3ms corresponding to the frame period.In one embodiment, with T update time _uBe chosen to be higher than frame period T _fIn the exemplary embodiment that dynamic video shows with 30Hz, renewal rate is chosen as 150Hz, so that for each unique frame of dynamic video, each row in the array all upgrades 5 times.The renewal rate of this 150Hz is corresponding to T update time _uBe 6.6ms.The person of ordinary skill in the field will understand, and system as herein described also is applicable to other frame periods and update time comparably, the exemplary situation that these values are only separated for ease of example.

Detailed structure according to the interferometric modulator of above-mentioned principle operation can be ever-changing.For example, Fig. 6 A-6C shows three kinds of different embodiment of moving lens structure.Fig. 6 A is a sectional view embodiment illustrated in fig. 1, wherein deposition one strip of metal material 14 on the support member 18 that quadrature extends.In Fig. 6 B, movably reflecting material 14 only is on the tethers 32 at corner and is attached to support member.In Fig. 6 C, movably reflecting material 14 is suspended on the deformable layer 34.Because the structural design and the material therefor of reflecting material 14 can be optimized aspect optical characteristics, and the structural design of deformable layer 34 and material therefor can be optimized aspect the desired mechanical property, so this embodiment has some advantages.In many open files, comprise that for example No. 2004/0051929 U.S. discloses in the application case, the production of various dissimilar interference devices has been described.Can use the known technology of a variety of people to make said structure, comprise a series of material depositions, patterning and etching step.

Fig. 7 to 21 shows that being used to except that the method and system shown in Fig. 3 to 5 use the additive method and the system of interferometric modulator array.Fig. 7 is graphic with the exemplary of the relation that applies voltage for the removable mirror position of an interferometric modulator shown in Figure 1, and wherein the work of this interferometric modulator does not utilize the hysteresis property of modulator.But, with reference to the described method and system utilization row of Fig. 7 to 21/row excitation protocol, described row/row excitation protocol the voltage that is applied to the MEMS interferometric modulator is higher or lower than all the time but be not in " lag windwo " or " stability window " in.The exemplary embodiment of moving according to Fig. 7 hereinafter is described with reference to Fig. 8 to 10 and Figure 17 and with reference to Figure 18 to 21.

For specific row/row excitation protocol, the Machine Design characteristic of the interferometric modulator by selecting to optimize actuation duration and release time can realize the stable operation of MEMS interferometric modulator.As herein described is some structure and the method for making with interferometric modulator of different release times and actuation duration.Generally speaking, the characteristic that makes displaceable layers have more compliance can increase the release time and the actuation duration of reducing.Similarly, make the not too submissive characteristic of displaceable layers can increase the actuation duration and the release time of reducing.

With reference to the described exemplary row of Fig. 8/row excitation protocol modulator is moved between each row gating signal in release areas shown in Figure 7.With reference to described another exemplary row/row excitation protocol of Figure 18 modulator is moved between each row gating signal in excited target zone shown in Figure 7.Other that also can use modulator design and drive scheme make up and modulator is moved in zones of different shown in Figure 7 and do not rely on lag windwo.

Can advantageously make the working voltage of MEMS interferometric modulator be lower than used voltage in the described method and system of reference Fig. 3 to 5 with reference to the described agreement of Fig. 7 to 21.For example, with reference to the exemplary voltages scope of the described row of Fig. 3 to 5/row excitation protocol application one from 0 volt to ± 10 volts.By contrast, then use lower voltage with reference to the described row of Fig. 7 to 21/row excitation protocol.For example, use one from-2V with reference to Fig. 8 to 10 and the described row of Figure 17/row excitation protocol _BiasVolt is to+2V _BiasThe scope of volt, wherein V _Bias=1 volt.Use one from-4V with reference to the described row of Figure 18-21/row excitation protocol _BiasVolt is to+4V _BiasThe scope of volt, wherein V _Bias=0.5 volt.By using the low bias voltage of this kind, lag windwo can be very narrow, thereby those driving methods that do not utilize the voltage in the lag windwo are with preferable.

The row of low-voltage/row excitation protocol comes work by making the MEMS interferometric modulator use more, can improve the efficient of the display device of using the MEMS device.For portable display apparatus, compare with the display device of in 20 volts more wide-voltage range for example, working, can advantageously reduce the memory capacity of battery feed, simultaneously be remained unchanged the working time of display device.Described 4 volts voltage range only is an exemplary, also can use other to be lower than the voltage range of 20 volts of common voltage ranges, and this still belongs in the category of the present invention.For the described embodiment of reference Fig. 8, V _BiasBe in the release areas among Fig. 7.For the described embodiment of reference Figure 18, V _BiasBe in the excited target zone among Fig. 7.Although V above has been described _BiasExemplary values, for example 1 volt and 0.5 volt, however V _BiasOther values also belong in the category of the present invention.In these embodiments, because lag windwo is narrow, thereby row/row excitation protocol makes interferometric modulator work beyond lag windwo basically all the time.

Make the work of MEMS interferometric modulator not rely on the hysteresis property of interferometric modulator with reference to the described embodiment of Fig. 7 to 10.In Fig. 7, show the relation of voltage between the row electrode of the inverse of intensity and modulator and the column electrode.Since 0 place, when moving right on the positive voltage direction that is putting between row electrode and the column electrode, shown light intensity is opened fully because of modulator cavity 19 and is in maximal value, till the voltage that is applied reaches by the voltage of putting 700 representatives.At this some place, the current potential between row electrode and the column electrode is enough to begin to make the cavity 19 of modulator recessed, and this will make modulator show the light of black or reflection minimum strength.At point 702 places, modulator shows black.Because this voltage begins to reduce from putting 702, thereby modulator will continue to show that black until point 704, putting 704 places, and the electro-mechanical force of modulator will begin to surpass the current potential that is applied.The current potential that continues to reduce between row electrode and the column electrode will make shown light intensity increase, and until putting 706 places, the cavity 19 of modulator is opened fully, and shown light is in its maximum intensity.

If between row electrode and column electrode, apply negative potential, then be moved to the left since 0 place along the negative voltage direction that puts between row electrode and the column electrode, shown light intensity is opened fully because of modulator cavity 19 and is in its maximal value, reaches by the voltage of putting 710 representatives until the voltage that is applied.At this some place, the current potential between row electrode and the column electrode is enough to begin to make cavity 19 recessed, and this will make modulator show the light of black or reflection minimum strength.At point 712 places, modulator shows black.Because this voltage begins to reduce (retracting) to the right from putting 712, thereby modulator will continue to show black until point 714, and at point 714 places, the electro-mechanical force of modulator will begin above the current potential that is applied to modulator.The current potential that continues to reduce between row electrode and the column electrode will make shown light intensity increase, and until putting 716 places, the cavity 19 of modulator is opened fully, and shown light is in its maximum intensity.

Fig. 8 is the synoptic diagram of one group of row voltage and column voltage, and this group row voltage and column voltage can be used for driving an interferometric modulator display and drift to release conditions between the gating signal so that modulator is expert at.In this exemplary embodiment, during delegation's gating signal, the value of row selection signal is+Δ V or-Δ V, and be expert between the gating signal, the value of row selection signal is 0.When use-Δ V signal came gating delegation, the value of data was+V _BiasThereby make cavity 19 recessed or be-V with the excitation modulator _BiasThereby open cavity 19 to discharge modulator.When use+Δ V signal was selected delegation, the value of row was-V _BiasTo encourage modulator or to be+V _BiasTo discharge modulator.In the present embodiment, be expert between the gating signal, row voltage is set at 0.During these cycles, be+V with the column signal value _BiasAnd-V _BiasModulator is slowly discharged.

Fig. 9 shows that one has the long actuation duration and the operation response of the modulator that drives according to capable voltage among Fig. 8 and column voltage.At the t=0 place, encourage interferometric modulator by a current potential of between row electrode and column electrode, representing.This voltage only be applied with on the column electrode therein enable voltage the time interval (as indicated above, be called T in this article _s) during apply.When the row gating signal finishes, under the effect of the mechanical return force of traveling electrode, the modulator in this row will migrate to the off-position gradually.If actuation duration T _ASurpass T _SSolid line among-Fig. 9 promptly shows this kind situation, then modulator will can not encourage fully and when can the voltage on column electrode being undone drift be back to the off-position.Preferably, actuation duration T _AWith T _SIdentical or less than T _S, so that line 900 is followed in the operation response.

Figure 10 shows that one has short release time and the operation response of the modulator that drives according to capable voltage shown in Figure 8 and column voltage.If release time is too short, then modulator may be encouraged fully, as shown in figure 10.Yet mechanical force can make modulator open too quickly, thereby shows maximum intensity improperly during upgrading a sizable part at interval.Preferably, release time T _RWith T update time _uIdentical or greater than T _u, so that line 1000 is followed in the operation response.

Figure 11 to 16 shows method and the structure of release time and the actuation duration be used to optimize interferometric modulator.Figure 11 A and 11B show that how much of spacing of pillar 18 change, thereby it can influence the operation response that actuation duration of modulator and release time improves modulator.By increasing the distance between the pillar 18, the release time and the actuation duration of reducing that can increase modulator.In Figure 11 A, each pillar 18 of modulator is set at an apart distance W.In Figure 11 B,, increase the release time and the actuation duration of reducing by the distance between each pillar 18 is increased to the W+ Δ.

Figure 12 A and 12B show that how much of tension force of displaceable layers 14 change, thereby it can influence the operation response that actuation duration of modulator and release time improves modulator.By reducing stress or the tension force in the displaceable layers 14, can increase release time and the actuation duration can reduce.Stress in the displaceable layers 14 can produce in several ways, for example by used material, temperature cycles, deposition process or the like.For example, can reduce tension force in the displaceable layers 14 by in forming the deposition process of displaceable layers 14, increasing power or air pressure.In Figure 12 A, displaceable layers 14 meets with stresses and tension force.In Figure 12 B, stress reduces (the corrugated character by displaceable layers 14 is represented).Tension force in the displaceable layers 14 reduces and will increase release time, actuation duration be reduced.

Figure 13 A and 13B show that how much of thickness of displaceable layers 14 change, thereby it can influence the operation response that actuation duration of modulator and release time improves modulator.The thickness that reduces displaceable layers 14 also can increase the release time of modulator, reduce actuation duration of modulator simultaneously.In Figure 13 A, the thickness of displaceable layers 14 is t.In Figure 13 B, the thickness of displaceable layers 14 is decreased to the t-Δ, the actuation duration that this can increase the release time of modulator and reduce modulator.Another is chosen as or in addition, the material composition of displaceable layers 14 can be become a kind of material that has more compliance, the actuation duration that this also will increase the release time of modulator and reduce modulator.For example, can use for example materials such as aluminium/aluminium alloy, metal oxide, chromium and nickel to displaceable layers 14, the compliance of the material after wherein leaning on more is low more.

Figure 14 A and 14B show that how much of size of the tethers 32 of displaceable layers 14 change, thereby it can influence the operation response that actuation duration of modulator and release time improves modulator.Figure 14 A and 14B are the top-down representation of displaceable layers 14.As explained above, tethers 32 is connected to displaceable layers 14 on the pillar 18 of an interferometric modulator.By reducing the bulkiness of tethers 32, can reduce the elasticity of displaceable layers 14, the actuation duration that this can increase the release time of modulator again and reduce modulator.In Figure 14 B, the size of tethers 32 reduces, thereby can increase the release time of modulator and reduce actuation duration of modulator.

Figure 15 A and 15B show that 1 in the displaceable layers 14 changes for how much, thereby it can influence the operation response that actuation duration of modulator and release time improves modulator.When modulator be subjected to excitation, when cavity 19 is recessed, the air in the cavity 19 is discharged from.By with displaceable layers 14 perforation, can allow air to pass through displaceable layers 14 and discharge cavity 19, thereby the actuation duration is reduced.In Figure 15 A, show a solid displaceable layers 14.In Figure 15 B, displaceable layers 14 comprises one or more perforation 1500, so that reduce the actuation duration of modulator.This also will increase release time, because the air pressure that originally will set up under recessed displaceable layers 14 is drained.

Figure 16 A and 16B show that 1 in the surface of fixed bed 16 changes for how much, thereby it can influence the operation response that actuation duration of modulator and release time improves modulator.Figure 16 B shows the path 1600 in the fixed bed 16, and described path 1600 forms the cavity passage that can discharge the gas of being caught by cavity.When cavity 19 was recessed, path 1600 provided an effusion position for the gas in the cavity 19, thereby reduces the actuation duration.In addition, in the recessed cavity 19 from the buffer brake of air by compression reduce increased the release time of modulator.Also can in other layers, form cavity gas release channel.Should be appreciated that, also can use the combination in any of above-mentioned each method to realize required net result.

Figure 17 shows the timing effect of the dynamic video in the modulator array, and this modulator array is to drive to drift about towards release conditions when row selection signal is undone according to capable voltage shown in Figure 8 and column voltage.In this exemplary embodiment, show dynamic video with 30 frames of per second (30Hz), thereby frame time is 33.3ms.In this exemplary embodiment, with 150Hz (T _U=6.6ms) speed is upgraded each row five times in each frame.In this example, by modulator being adjusted to the long release time with an actuation duration that is exceedingly fast and a 30ms above with reference to one of described method of Figure 11 to 16 or one combination.Above frame number, provide the subframe that is command forms that is sent to a particular modulator to upgrade.These orders to be opening and the shutdown command form provides, and it discharges corresponding to being respectively applied for of column electrode that is applied to modulator and row electrode and the voltage of excitation modulator.In Figure 17, below order, provide these voltage.The size of cavity 19 be shown in subframe directly over, to show all thickness of cavitys 19 constantly of run duration.

This sequence starts from the most last two renewal subframes of frame 0.Modulator is in its cavity 19 and is the steady state (SS) of maximum diameter of hole.When frame 1 beginning, indication encourages modulator.At point 1700 places, cavity 19 is recessed.When the self-modulation device is cancelled horizontal pulse and scanned remaining row, cavity 19 will be opened a certain amount of with drifting about.At T _U(6.6ms) later, apply driving voltage once more with modulators drives to maximum excitation state.During the demonstration of frame 1, this occurs five times at the some place that is labeled as 1702,1704,1706,1708 and 1710.

During frame 2, modulator is written to open position, current potential between column electrode and the row electrode is expert at is about 0 during the gating signal.In ensuing 30ms, modulator discharges, to reach its maximum diameter of hole size at point 1712 places.Frame 3 shows that also modulator is in open mode.Thereby the modulator that is in open mode will keep this kind state during entire frame 3.If in frame 4, encourage modulator, then will repeat reference frame 1 described process.

Figure 18 is the synoptic diagram of one group of row voltage and column voltage, modulator is expert at drift to actuated state between the gating signal thereby this group row voltage and column voltage can be used for driving an interferometric modulator display.Compare with the row/row excitation protocol that can make modulator drift to release conditions among Fig. 8, by changing the excitation and the release time of display driven strategy works and modulator, making the state of nature of modulator is actuated state, drifts about towards actuated state between the renewal thereby modulator is expert at.The mode that this driven strategy works applies capable voltage and data combination is: when row during not by gating, modulator will be driven to actuated state, and when being expert at by gating, the modulator in this row can be written to release conditions.The characteristic of this row/row excitation protocol is opposite with the characteristic that exists in reference Fig. 8-10 and 17 described embodiment.

Figure 19 shows that one has long release time and the operation response of the modulator that drives according to capable voltage shown in Figure 180 and column voltage.Figure 19 supposition has optic response same as shown in Figure 7.In Figure 19, if release time is long, then during the time cycle that row is enabled therein, modulator will can not be released.Modulator in the present embodiment will drift about towards actuated state, and will be in actuated state in the time interval before rewriteeing modulator state.Preferably, release time T _RWith T _SIdentical or be shorter than T _S, so that line 1900 is followed in the operation response.

Figure 20 shows that one has the short actuation duration and the operation response of the modulator that drives according to capable voltage among Figure 18 and column voltage.In Figure 20, the actuation duration is too short, thereby after modulator successfully discharges, modulator will drift to actuated state too quickly, thereby shows incorrect optic response in the unacceptable ratio of update cycle.Preferably, actuation duration T _AWith T update time _uIdentical or be longer than T update time _u, so that line 2000 is followed in the operation response.

For modulator, when driving, wish to increase the actuation duration and the release time of reducing by capable voltage shown in Figure 180 and column voltage with the optic response shown in Figure 19 and 20.This is by oppositely realizing with reference to the described method of Figure 11 to 16.Specifically, can realize the increase of actuation duration and reducing of release time in the following way: reduce the intercolumniation shown in Figure 11 A; The tension force of the displaceable layers 14 of increase shown in Figure 12 A; Increase the thickness of displaceable layers 14 as shown in FIG. 13A; When forming displaceable layers 14, use a flexible littler material, increase the bulkiness of the tethers 32 shown in Figure 14 A; When the displaceable layers 14 that forms shown in Figure 15 A, use solid material; And in fixed bed 16, use a solid layer with even flatness.Should be appreciated that, also can use the combination in any of above-mentioned each method to realize required net result.

Figure 21 shows the timing effect of the dynamic video in the modulator array, and this modulator array is to drive according to capable voltage and column voltage among Figure 18, so that drift to actuated state when cancelling the row selection.In this exemplary embodiment, show dynamic video with 30 frames of per second (30Hz), thereby frame time is 33.3ms.In this exemplary embodiment, in each frame, each row is upgraded five times with the speed of 150Hz (TU=6.6ms).In this example, by modulator being adjusted to the long actuation duration with a release time that is exceedingly fast and a 30ms above with reference to one of described method of Figure 11 to 16 or one combination.Above frame number, provide the subframe that is command forms that is sent to a particular modulator to upgrade.These orders to be opening and the shutdown command form provides, and it discharges corresponding to being respectively applied for of column electrode that is applied to modulator and row electrode and the voltage of excitation modulator.In Figure 21, below order, provide these voltage.The size of cavity 19 be shown in subframe directly over, to show all thickness of cavitys 19 constantly of run duration.

This sequence starts from the most last two subframes of frame 0.Modulator is in its cavity 19 and is the steady state (SS) of minimum-value aperture.When frame 1 beginning, indication discharges modulator.At point 2100 places, cavity 19 is recessed.When the self-modulation device is cancelled capable strobe pulse and scanned remaining row, cavity 19 will be closed a certain amount of with drifting about.At T _U(6.6ms) later, apply again release voltage with modulators drives to release conditions.During the demonstration of frame 1, this occurs five times at the some place that is labeled as 2102,2104,2106,2108 and 2110.These row corresponding to array upgrade point.

During frame 2, modulator is written to open position, cancel the current potential between column electrode and the row electrode simultaneously.In ensuing 30ms, modulator discharges, thereby has almost spent the entire frame cycle and reach its maximum diameter of hole size at point 2112 places.Frame 3 shows that also modulator is in actuated state.Thereby the modulator that is in closed condition will keep this kind state during entire frame 3.

Figure 22 A and 22B are the system block diagrams of an embodiment of demonstration one display device 2040.Display device 2040 for example can be cellular phone or mobile phone.Yet the same components of display device 2040 and the form of doing slightly to change thereof also can be used as for example illustration of all kinds such as TV and portable electronic device display device.

Display device 2040 comprises a shell 2041, a display 2030, an antenna 2043, a loudspeaker 2045, an input media 2048 and a microphone 2046.Shell 2041 is made by any technology in the known numerous kinds of manufacturing process of person of ordinary skill in the field usually, comprises injection moulding and vacuum forming.In addition, shell 2041 can be made by any material in the numerous kinds of materials, includes but not limited to the combination of plastics, metal, glass, rubber and pottery or one.In one embodiment, shell 2041 comprises removable part (not shown), and these removable parts can have removable part different colours or that comprise different identification, picture or symbol with other and use instead.

The display 2030 of exemplary display device 2040 can be any in the numerous kinds of displays, comprises bi-stable display as herein described.In other embodiments, display 2030 comprises flat-panel monitors such as plasma scope for example mentioned above, EL, OLED, STN LCD or TFT LCD or non-tablet display such as CRT or other tubular devices for example, and these displays are known by the person of ordinary skill in the field.Yet for ease of the explanation present embodiment, display 2030 comprises just like interferometric modulator display as herein described.

The assembly that in Figure 22 B, schematically shows an embodiment of exemplary display device 2040.Example illustrated display device 2040 comprises a shell 2041, and can comprise that other are closed in assembly wherein at least in part.For example, in one embodiment, exemplary display device 2040 comprises a network interface 2027, and this network interface 2027 comprises that one is coupled to the antenna 2043 of a transceiver 2047.Transceiver 2047 is connected to processor 2021, and processor 2021 is connected to again regulates hardware 2052.Regulating hardware 2052 can be configured to a signal is regulated (for example a signal being carried out filtering).Regulate hardware 2052 and be connected to a loudspeaker 2045 and a microphone 2046.Processor 2021 also is connected to an input media 2048 and a driving governor 2029.Driving governor 2029 is coupled to one frame buffer 2028 and is coupled to array driver 2022, and array driver 2022 is coupled to an array of display 2030 again.One power supply 2050 is all component power supply according to the designing requirement of particular exemplary display device 2040.

Network interface 2027 comprises antenna 2043 and transceiver 2047, so that exemplary display device 2040 can communicate by network and one or more device.In one embodiment, network interface 2027 also can have some processing capacity, to reduce the requirement to processor 2021.Antenna 2043 is to launch being used to known to the person of ordinary skill in the field and any antenna of received signal.In one embodiment, this antenna is launched according to IEEE 802.11 standards (comprising IEEE 802.11 (a), (b), or (g)) and is received the RF signal.In another embodiment, this antenna is launched according to bluetooth (BLUETOOTH) standard and is received the RF signal.If be cellular phone, then this antenna is designed to receive CDMA, GSM, AMPS or other and is used for the known signal that communicates at the mobile phone network.2047 pairs of signals that receive from antenna 2043 of transceiver carry out pre-service, so that it can be received and further be handled by processor 2021.Transceiver 2047 is also handled the signal that self processor 2021 receives, so that they can be by antenna 2043 from exemplary display device 2040 emissions.

In an alternate embodiment, can replace transceiver 2047 by a receiver.In another alternate embodiment, can replace network interface 2027 by an image source, this image source can store or produce and send out the view data of delivering to processor 2021.For example, this image source can be one and contains the software module that the digital video disk (DVD) of view data or hard disk drive or produce view data.

The overall operation of processor 2021 common control examples display device 2040.Processor 2021 automatic network interfaces 2027 or an image source receive data (for example Ya Suo view data), and this data processing is become raw image data or is processed into a kind of form that is easy to be processed into raw image data.Then, the data after processor 2021 will be handled are sent to driving governor 2029 or are sent to frame buffer 2028 and store.Raw data typically refers to the information that can discern the picture characteristics of each position in the image.For example, described picture characteristics can comprise color, saturation degree and gray level.

In one embodiment, processor 2021 comprises a microcontroller, CPU or is used for the logical block of the operation of control examples display device 2040.Regulating hardware 2052 generally includes and is used for sending signals and being used for amplifier and wave filter from microphone 2046 received signals to loudspeaker 2045.Adjusting hardware 2052 can be the discrete component in the exemplary display device 2040, perhaps can incorporate in processor 2021 or other assemblies.

Driving governor 2029 direct self processors 2021 or receive the raw image data that produces by processor 2021 from frame buffer 2028, and suitably with the raw image data reformatting so as high-speed transfer to array driver 2022.Particularly, driving governor 2029 is reformated into one with raw image data and has the data stream of grating class form, so that it has a chronological order that is suitable for scanning array of display 2030.Then, the information after driving governor 2029 will format is sent to array driver 2022.Although driving governor 2029 (for example lcd controller) normally as one independently integrated circuit (IC) be associated with system processor 2021, yet these controllers also can make up by many kinds of modes.It can be used as hardware and is embedded in the processor 2021, is embedded in the processor 2021 or together fully-integrated with example, in hardware and array driver 2022 as software.

Usually, the self-driven controllers 2029 of array driver 2022 receive the information after the format and video data are reformated into one group of parallel waveform, and the parallel waveform per second of this group many times is applied to from hundreds of of the x-y picture element matrix of display, thousands of lead-in wires sometimes.

In one embodiment, driving governor 2029, array driver 2022, and array of display 2030 be applicable to the display of arbitrary type as herein described.For example, in one embodiment, driving governor 2029 is a traditional display controller or bistable display controllers (a for example interferometric modulator controller).In another embodiment, array driver 2022 is a legacy drive or a bistable display driver (a for example interferometric modulator display).In one embodiment, a driving governor 2029 integrates with array driver 2022.This embodiment is very common in the integrated system of for example cellular phone, wrist-watch and other small-area display equal altitudes.In another embodiment, array of display 2030 is a typical array of display or a bistable array of display (a for example display that comprises an interferometric modulator array).

Input media 2048 makes the operation that the user can control examples display device 2040.In one embodiment, input media 2048 comprises a keypad (for example qwerty keyboard or telephone keypad), a button, a switch, a touch sensitive screen, a pressure-sensitive or thermosensitive film.In one embodiment, microphone 2046 is input medias of exemplary display device 2040.When using microphone 2046, can provide voice command to come the operation of control examples display device 2040 by the user to these device input data.

Well-known many kinds of energy storing devices in the technical field under power supply 2050 can comprise.For example, in one embodiment, power supply 2050 is a rechargeable accumulator, for example a nickel-cadmium accumulator or a lithium-ions battery.In another embodiment, power supply 2050 is a regenerative resource, capacitor or solar cell, comprises plastic solar cell and solar cell lacquer.In another embodiment, power supply 2050 is configured to the socket reception electric power on wall.

In certain embodiments, programmability is as indicated above is present in the driving governor in control, and this driving governor can be arranged on several positions of electronic display system.In some cases, the control programmability is present in the array driver 2022.The person of ordinary skill in the field will know, above-mentioned prioritization scheme can be implemented in the hardware of any amount and/or the component software and be built into various structures.In frame 4, discharge, will repeat reference frame 1 described process.

Although above describe in detail is to show, illustrate and point out the novel feature that is applicable to various embodiment of the present invention, yet should be appreciated that, the person of ordinary skill in the field can be to the various omissions of making of shown device or technology, alternative and change on form and details, and this does not deviate from spirit of the present invention.Should know,, thereby can not provide in the form of all features as herein described and advantage one and implement the present invention because some feature can use with other features or try out mutually independently.

Claims

1, a kind of MEMS device, it comprises:

One comprises the fixed bed of one first electrode;

Once structure with one away from the primary importance of described first electrode with one near displaceable layers mobile between the second place of described first electrode, when described displaceable layers was in described primary importance, described displaceable layers and described fixed bed formed a cavity; And

One is connected to second electrode of described displaceable layers,

The mobile voltage difference that is based between described first and second electrode of wherein said displaceable layers, and described displaceable layers is configured to move to the described second place and move to described primary importance with one second mean speed from the described second place from described primary importance with one first mean speed, and wherein said first and second mean speed is inequality.

2, device as claimed in claim 1, wherein said first mean speed is greater than described second mean speed.

3, device as claimed in claim 1, wherein said second mean speed is greater than described first mean speed.

4, device as claimed in claim 1, wherein said displaceable layers are reflectivity.

5, device as claimed in claim 1, wherein said cavity configuration becomes to come light modulated with interference mode.

6, device as claimed in claim 1, wherein said displaceable layers comprise aluminium, metal oxide, chromium, and nickel at least a.

7, device as claimed in claim 1, wherein said displaceable layers comprises perforation.

8, device as claimed in claim 1, wherein said cavity air inclusion release channel.

9, device as claimed in claim 1, it further comprises:

One with described first and second electrode in the processor of at least one electrode electric connection, described processor is configured to image data processing; And

One with the memory storage of described processor electric connection.

10, device as claimed in claim 9, it further comprises one drive circuit, at least one electrode that described driving circuit is configured in described first and second electrode sends at least one signal.

11, device as claimed in claim 10, it further comprises a controller, described controller is configured to send to described driving circuit at least a portion of described view data.

12, device as claimed in claim 9, it further comprises an image source module, described image source module is configured to send described view data to described processor.

13, device as claimed in claim 12, wherein said image source module comprise a receiver, transceiver, reach at least one in the transmitter.

14, device as claimed in claim 9, it further comprises an input media, described input media is configured to receive the input data and described input data is sent to described processor.

15, a kind of MEMS device, it comprises:

First mobile member, its be used to make a displaceable layers one away from the primary importance and of described first mobile member near moving between the second place of described first mobile member;

Second mobile member, it is used to make described displaceable layers to move between described first and second position, and when described displaceable layers was in described primary importance, described displaceable layers and described first mobile member formed a cavity; And

The 3rd mobile member, it is used to make described displaceable layers to move to the described second place and move to described primary importance with one second mean speed from the described second place from described primary importance with one first mean speed, and wherein said first and second mean speed is inequality.

16, device as claimed in claim 15, wherein said first mobile member comprise that one comprises the fixed bed of one first electrode.

17, device as claimed in claim 15, wherein said second mobile member comprise that one is connected to second electrode of described displaceable layers.

18, device as claimed in claim 15, wherein said the 3rd mobile member comprises described first and second electrode.

19, device as claimed in claim 15, it further comprises the member that is used for the interference mode light modulated.

20, device as claimed in claim 19, wherein said optical modulation member comprises a cavity.

21, device as claimed in claim 15, wherein said first mean speed is greater than described second mean speed.

22, device as claimed in claim 15, wherein said second mean speed is greater than described first mean speed.

23, device as claimed in claim 15, wherein said displaceable layers are reflectivity.

24, device as claimed in claim 15, wherein said displaceable layers comprise aluminium, metal oxide, chromium, and nickel at least a.

25, device as claimed in claim 15, wherein said displaceable layers comprises perforation.

26, device as claimed in claim 15, wherein said cavity comprise cavity gas release channel.

27, a kind of with interferometric modulator array excitation repeatedly to show the method for an individual data frame, described method comprises:

Receive a data-signal that is used to encourage one or more interferometric modulators during corresponding to the time cycle of a single frame one;

Use a potential difference (PD) to encourage described one or more interferometric modulator, so that described interferometric modulator moves to an actuated state with one first mean speed; And

Discharge described one or more interferometric modulator display elements, so that described interferometric modulator moves towards release conditions from described actuated state with second a different mean speed.

28, method as claimed in claim 27, it further comprises and encourages described interferometric modulator display elements again, so that before arriving described release conditions, described interferometric modulator moves back to described actuated state.

29, method as claimed in claim 27, it further is included in described interferometric modulator when moving apart described actuated state, applies a bias voltage to described interferometric modulator.

30, method as claimed in claim 29, wherein said potential difference (PD) equals the twice of described bias voltage substantially.

31, method as claimed in claim 29, the absolute value of wherein said bias voltage is less than an absolute value corresponding to the voltage of a lag windwo of described interferometric modulator display elements.

32, a kind of driving one interferometric modulator element is to show the method for a Frame, and described method comprises:

Receiving a data-signal one during corresponding to the time cycle of a single frame display cycle shows for described interferometric modulator; And

Apply one first potential difference (PD) on described single frame display cycle period ground to described interferometric modulator display elements, wherein when applying described first potential difference (PD), described interferometric modulator all moves towards release conditions from an actuated state, and when applying one second potential difference (PD) to described interferometric modulator, before arriving described release conditions, described interferometric modulator moves to described actuated state.

33, method as claimed in claim 32, it further is included in described interferometric modulator when moving away from described actuated state, applies a bias voltage to described interferometric modulator.

34, method as claimed in claim 33, wherein said first potential difference (PD) equals the twice of described bias voltage substantially.

35, method as claimed in claim 33, the absolute value of wherein said bias voltage is less than an absolute value corresponding to the voltage of a lag windwo of described interferometric modulator display elements.

36, a kind of delegation's interferometric modulator display elements in a display component array writes the method for video data, and described method comprises:

Use one first potential difference (PD) that one first group of video data is write to the described row of described array, so that some element at least in the described interferometric modulator element moves to an actuated state;

Discharge the described interferometric modulator element in the described row of described array, so that described interferometric modulator element moves towards described release conditions from described actuated state lentamente; And

Use a potential difference (PD) that described first group of video data re-writed the described row of described array, so that before described interferometric modulator arrived described release conditions, described interferometric modulator element was returned described actuated state.

37, method as claimed in claim 36, it further is included in described interferometric modulator when moving away from described actuated state, and the described interferometric element in the described row of described array applies a bias voltage.

38, method as claimed in claim 37, wherein said potential difference (PD) equals the twice of described bias voltage substantially.

39, method as claimed in claim 37, the absolute value of wherein said bias voltage is less than an absolute value corresponding to the voltage of a lag windwo of described interferometric modulator element.

40, a kind of with interferometric modulator array excitation repeatedly to show the method for an individual data frame, described method comprises:

Use a potential difference (PD) to encourage described interferometric modulator display elements, so that described interferometric modulator moves to release conditions; And

Encourage described interferometric modulator display elements, so that described interferometric modulator moves towards an actuated state away from described release conditions; And

Again discharge described interferometric modulator display elements, so that before arriving described actuated state, described interferometric modulator moves back to described release conditions.

41, method as claimed in claim 40, it further is included in described interferometric modulator when moving apart described release conditions, applies a bias voltage to described interferometric modulator.

42, method as claimed in claim 41, wherein said potential difference (PD) equals the twice of described bias voltage substantially.

43, method as claimed in claim 41, the absolute value of wherein said bias voltage is greater than an absolute value corresponding to the voltage of a lag windwo of described interferometric modulator display elements.

44, a kind of driving one interferometric modulator element is to show the method for a Frame, and described method comprises:

Apply one first potential difference (PD) on described single frame display cycle period ground to described interferometric modulator display elements, wherein when applying described first potential difference (PD), described interferometric modulator all moves towards an actuated state from release conditions, and when applying one second potential difference (PD) to described interferometric modulator, before arriving described actuated state, described interferometric modulator moves to described release conditions.

45, method as claimed in claim 44, it further is included in described interferometric modulator when moving away from described release conditions, applies a bias voltage to described interferometric modulator.

46, method as claimed in claim 45, wherein said potential difference (PD) equals the twice of described bias voltage substantially.

47, method as claimed in claim 45, the absolute value of wherein said bias voltage is greater than an absolute value corresponding to the voltage of a lag windwo of described interferometric modulator display elements.

48, a kind of delegation's interferometric modulator display elements in a display component array writes the method for video data, and described method comprises:

Use a potential difference (PD) that one first group of video data is write to the described row of described array, so that some element at least in the described interferometric modulator element moves to release conditions;

Encourage the described interferometric modulator element in the described row of described array, so that described interferometric modulator element moves towards described actuated state away from described release conditions; And

Use a potential difference (PD) that described first group of video data re-writed the described row of described array, so that before described interferometric modulator element arrived described actuated state, described interferometric modulator element was returned described release conditions.

49, method as claimed in claim 48, it further is included in described interferometric modulator element when moving away from described release conditions lentamente, and the described interferometric modulator element in the described row of described array applies a bias voltage.

50, method as claimed in claim 49, wherein said potential difference (PD) equals the twice of described bias voltage substantially.

51, method as claimed in claim 49, the absolute value of wherein said bias voltage is greater than an absolute value corresponding to the voltage of a lag windwo of described interferometric modulator element.

52, a kind of method of manufacturing one MEMS device, described method comprises:

Formation one comprises the fixed bed of one first electrode;

Form a displaceable layers, described displaceable layers through structure with one away from the primary importance of described first electrode with one near mobile between the second place of described first electrode, when described displaceable layers was in described primary importance, described displaceable layers and described fixed bed formation one comprised the cavity of a gas; And

Formation one is connected to second electrode of described displaceable layers,

The mobile voltage difference that is based between described first and second electrode of wherein said displaceable layers, and described displaceable layers is made into one first mean speed and moves to the described second place and move to described primary importance with one second mean speed from the described second place from described primary importance, and wherein said first and second mean speed is inequality.

53, method as claimed in claim 52, wherein said first mean speed is greater than described second mean speed.

54, method as claimed in claim 52, wherein said second mean speed is greater than described first mean speed.

55, method as claimed in claim 52 wherein forms described displaceable layers and comprises formation one reflection horizon.

56, method as claimed in claim 52 wherein forms described cavity and comprises formation one interfere type optical modulation cavity.

57, method as claimed in claim 52, wherein form described displaceable layers comprise with described displaceable layers form comprise aluminium, metal oxide, chromium, and nickel at least a.

58, method as claimed in claim 52 wherein forms described displaceable layers and is included in formation perforation in the described displaceable layers.

59, method as claimed in claim 52 wherein forms described cavity and is included in formation gas release channel in the described cavity.

60, a kind of MEMS device of making by method as claimed in claim 52.