CN1755345A - Micro-acting force modeling method based on deformation of nano scanning probe - Google Patents
Micro-acting force modeling method based on deformation of nano scanning probe Download PDFInfo
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- CN1755345A CN1755345A CN 200410050540 CN200410050540A CN1755345A CN 1755345 A CN1755345 A CN 1755345A CN 200410050540 CN200410050540 CN 200410050540 CN 200410050540 A CN200410050540 A CN 200410050540A CN 1755345 A CN1755345 A CN 1755345A
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- 239000000523 sample Substances 0.000 title claims abstract description 62
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Abstract
The invention discloses a micro-acting force modeling method based on deformation of a nano scanning probe. When the scanning probe is contacted with the surface of a sample, a photoelectric sensor is used for acquiring deflection and torsion deformation signals of a cantilever beam of the scanning probe under the action of stress, the deformation signals generate an output signal which has a corresponding relation with the deformation of the cantilever beam through a photoelectric sensor output signal calculation model, and a measurement of the force acting on the cantilever beam, namely the variation of the cantilever beam deformation in a reference coordinate system is obtained; and calculating the micro-acting force acting on the scanning probe under the nano-operation condition by a kinetic analysis method. The invention establishes a bridge between the macroscopic world and the microscopic world, so that the operation in the nano environment is the same as the operation in the macroscopic world, and a new technical approach is developed for the development of complex and flexible nano operation and related technologies.
Description
Technical field
The present invention relates to the nano-manipulation field, specifically a kind of little acting force modeling method based on the deformation of nano scanning probe.
Background technology
In the nano-manipulation field, atomic force micro imaging system (AFM) not only as the instrument of scanning imagery, also can be used as the instrument that carries out nano-manipulation.In the nano-manipulation process, the probe tip of AFM is in the acting in conjunction of multiple power (as repulsive force between surface capillary power, friction force, Van der Waals force, adhesive force and atom etc.).Because directly observation has great difficulty with this power of perception under nanoscale, thereby feasible method is by indirect detection amount (as detecting the deformation of scan-probe).How to explain the physical phenomenon of this indirect detection, and with the suffered little acting force of the correct description probe of mathematical model mode, so just can with the mechanics phenomenon in the nanometer environment directly statement come out, for nano science and operation and operational method research provide new technological approaches.The description of the acting force under this microcosmic and explanation, research has the meaning of particular importance to nanosecond science and technology.
The scan-probe of AFM system is a cantilever beam structure, is stating under the effect that acts on the little power on the needle point, and semi-girder can produce deformation, and this deformation power can be measured by sensor (photoelectricity, piezoelectricity etc.).But the report that does not have this respect at present.
Summary of the invention
For addressing the above problem, the purpose of this invention is to provide a kind of little acting force modeling method based on the deformation of nano scanning probe.
The present invention proposes a kind of by to realize the method for acting force modeling based on the deformation analysis of the scan-probe semi-girder of AFM system.
Technical solution of the present invention is: when scan-probe contacts with sample surfaces, semi-girder by photoelectric sensor acquisition scans probe deflects under stressed effect and the torsional deformation signal, described deformation signal produces the output signal that the deformation with semi-girder has corresponding relation by the photoelectric sensor output signals computation model, draw a tolerance that acts on power on the semi-girder, i.e. the variable quantity of semi-girder beam deformation in reference frame; By dynamic analysis method, be implemented in the little acting force on the calculating effect scan-probe under the nano-manipulation condition again.
The principle of the invention is: when general AFM system carries out scanning operation, use laser beam irradiation on the semi-girder of scan-probe, and reflex on the optoelectronic position detecting sensor (as PSD), realize the nanoscale observation to object.This moment, scanning probe tip and sample were contact condition, and along with the morphology change of sample surfaces makes stressed generation dipping and heaving of probe and direction finding torsional deformation, these deformation are offset the facula position that reflexes to photoelectric sensor, by gathering the output signal of photoelectric sensor side-play amount, can record the variable quantity of semi-girder deformation.This variable quantity has reflected make a concerted effort (size and the direction) that acts on probe.The utilization mechanical analyzing method can should make a concerted effort decompose and quantize, and just can calculate probe in all directions (X, Y, Z) the last size of suffered power.By collection and feedback to these power, make the operator can experience the necessary being of operating physical force in real time, thus control operation action that can non-blindness; Also can be used for simultaneously mode of operation is carried out controlling based on the self-adaptation operation of power reflection.
The present invention has following advantage:
The present invention can calculate the three-dimensional force that acts on the needle point under known cantilever beam structure and elastic deformation coefficient's condition.This force information is to realizing having the nano-manipulation and the scientific research technical merit of force feedback, and the effect that understanding nanometer environment is exerted oneself and the character of operand, the development of promotion nanoscale science and technology have great importance.
The present invention has set up the bridge of macrocosm and microworld, makes to the operation under the nanometer environment as the operation in macrocosm, as promoting actions such as delineation.This method be carry out complexity, nano-manipulation and development of technologies have been opened up new technological approaches flexibly.
Description of drawings
Fig. 1 is an optical observation schematic diagram of the present invention, the variation of radiation direction when dotted portion wherein represents that semi-girder is bent upwards.
Fig. 2 is photosensor structure figure of the present invention.
Fig. 3 is scan-probe mechanical analysis figure of the present invention.
Embodiment
Embodiment 1
As shown in Figure 1, the invention provides a kind of method that realizes mechanical analysis and modeling at the deformation of scan-probe 2, this method adopts the reference metric amount of the output signal of photoelectric sensor 3 (present embodiment adopts four-quadrant PSD) as semi-girder 4 deformation of scan-probe 2, by known sensor optical path model, the geometric model of scan-probe 2 and characteristic of material mechanics, adopt dynamic analysis method, realized a kind of method at the little acting force under the nano-manipulation condition, on the calculating effect scan-probe.
Wherein: the geometric model of scan-probe 2: scan-probe 2 is set up rectangular coordinate system as shown in Figure 3, determine the length of the semi-girder 4 of scan-probe 2, the scanning angle the when length of probe tip 5 and scan-probe 2 scannings.The characteristic of material mechanics of scan-probe 2: the elasticity coefficient and the coefficient of torsion of promptly determining scan-probe 2.
The optical observation of operating physical force:
As shown in Figure 1, when scan-probe 2 contacts with sample surfaces, provide under the light source situation at laser instrument 1, the semi-girder 4 of scan-probe 2 deflects and torsional deformation under stressed effect, makes semi-girder 4 reflections change for the light circuit of photoelectric sensor 3.By the photoelectric characteristic of photoelectric sensor 3, can produce the output signal that the deformation with semi-girder 4 has the certain proportion relation.This signal promptly can be as a tolerance that acts on power on the semi-girder 4 through Filtering Processing and deflection and torsional deformation model calculation.
As shown in Figure 2, be four-quadrant photosensor structure synoptic diagram, it has four output signal A, B, C, D, with scan-probe 2 corresponding installation situation under, the horizontal output signal of its optical imagery position and vertical output signal can branch respective cantilevered beam 4 reverse the deformation with upper and lower displacement.
Wherein, the output signal computation model of photoelectric sensor horizontal direction is:
The output signal computation model of photoelectric sensor vertical direction is:
Like this, change, just can extrapolate the variable quantity of semi-girder 4 deformation in reference frame by the signal of gathering photoelectric sensor.S wherein
nRepresented that semi-girder 4 is subjected to normal force (F shown in Figure 3
z) the upper and lower displacement amount that produced, S
lRepresented that semi-girder 4 is subjected to tangential force (F shown in Figure 3
1) torsional capacity that produced; For resolution of force calculating provides foundation.
The expression model of the little acting force of needle point:
The mechanical analysis of beam type scan-probe 2 is carried out mechanical analysis by the deformation to semi-girder 4 as shown in Figure 3, can derive the size that acts on the power on the probe tip 5.
F among Fig. 3
x, F
y, F
zBe respectively the three-dimensional force that acts on the scanning probe tip 5, F
l, F
n, be the effect of making a concerted effort, tangential force and the normal force of difference role of delegate on probe tip 5, l is the length of semi-girder 4, and h is probe tip 5 length, and T is the tip of probe tip 5.Wherein establish semi-girder 4 at normal force F
nEffect under be δ around the deflection angle of y axle
y, at direction finding power F
lEffect under the angle reversed around the x axle be τ
xThen the output signal of the angle of semi-girder 4 deformation and photoelectric sensor has following relation:
δ
y＝K
nS
n；
τ
x＝K
lS
l；
K wherein
lAnd K
nBe the system optics amplification coefficient.And then can determine F by the elastic model of semi-girder 4
nFor:
F
n＝kδ
y＝kK
nS
n；
Wherein k is semi-girder 4 elasticity coefficient.And F
lComponent F
yCan determine by the moment of torsion equation of semi-girder 4, promptly
Wherein, k
lBe the coefficient of torsion of semi-girder 4, h is a length of needlepoint.By F
n, F
y, momental equation by semi-girder 4 and triangle relation finally can be derived the three-dimensional mechanical model that acts on needle point and be again:
Wherein φ is the angle of tangential force Fl and Fx.
The deformation that the present invention proposes a kind of semi-girder 4 by detecting afm scan probe 2 obtains to act on a kind of method of the little acting force on the scan-probe 2.The force information that obtains is input to the haptic device (as phantom) that joins with computing machine through after the transformation of scale, the operator can experience the acting force of probe tip under the nano-manipulation environment 5 and sample room in real time, and then can experience pattern, the friction condition on surface and be operated the motion conditions etc. of thing as sample surfaces.Great advantage of the present invention has been to set up the bridge of macrocosm and microworld, makes to the operation under the nanometer environment as the operation in macrocosm, as promoting actions such as delineation.The present invention be carry out complexity, nano-manipulation and development of technologies have been opened up new technological approaches flexibly.
Claims (3)
1. little acting force modeling method based on the deformation of nano scanning probe, it is characterized in that: when scan-probe contacts with sample surfaces, semi-girder by photoelectric sensor acquisition scans probe deflects under stressed effect and the torsional deformation signal, described deformation signal produces the output signal that the deformation with semi-girder has corresponding relation by the photoelectric sensor output signals computation model, draw a tolerance that acts on power on the semi-girder, i.e. the variable quantity of semi-girder beam deformation in reference frame; By dynamic analysis method, be implemented in the little acting force on the calculating effect scan-probe under the nano-manipulation condition again.
2. according to the described little acting force modeling method of claim 1 based on the deformation of nano scanning probe, it is characterized in that: corresponding with the probe respectively installation of the output signal of described limit photoelectric sensor, wherein the level of optical imagery position and vertical output signal respectively the respective cantilevered beam reverse deformation with upper and lower displacement; Described photoelectric sensor output signals computation model comprises the output signal computation model of photoelectric sensor vertical direction output signal computation model and horizontal direction, and is specific as follows:
The output signal computation model of horizontal direction is:
Photoelectric sensor vertical direction output signal computation model is:
S
nThe expression semi-girder is subjected to normal force F
ZThe photoelectric sensor output signals of correspondence when effect produces vertical deformation down, S
lThe expression semi-girder is subjected to tangential force F
1The torsional capacity that is produced.
3. according to the described little acting force modeling method based on the deformation of nano scanning probe of claim 1, it is characterized in that: described dynamic analysis method is: derive the size that acts on the power on the needle point by the mechanical analysis of beam type probe, establish F
x, F
y, F
zBe respectively the three-dimensional force that acts on the scanning probe tip, F
l, F
nBe the effect of making a concerted effort, tangential force and the normal force of difference role of delegate on needle point, l is the length of semi-girder, and h is a length of needlepoint, and T is the needle point tip; And establish semi-girder at normal force F
nEffect under be δ around the deflection angle of y axle
y, at direction finding power F
lEffect under the angle reversed around the x axle be τ
x, then the output signal of the angle of semi-girder deformation and photoelectric sensor has following relation:
δ
y＝K
nS
n；
τ
x＝K
lS
l；
K wherein
lAnd K
nBe the system optics amplification coefficient; And then can determine F by the elastic model of semi-girder
n, that is:
F
n＝kδ
y＝k?K
nS
n；
Wherein k is the semi-girder elasticity coefficient; And F
lComponent F
yCan determine by the moment of torsion equation of semi-girder, promptly
Wherein, k
lBe the coefficient of torsion of semi-girder, h is a length of needlepoint; By F
n, F
y, momental equation by semi-girder and triangle relation are derived the three-dimensional mechanical model that acts on needle point and are again:
Wherein φ is the angle of tangential force Fl and Fx.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106796246A (en) * | 2014-02-24 | 2017-05-31 | 布鲁克纳米公司 | Accurate probe deployment in automatic scanning probe microscopic system |
| CN108489414A (en) * | 2018-05-07 | 2018-09-04 | 中国矿业大学 | A kind of micro/nano-scale memorial alloy round trip memory strain test device and test method |
| CN111157903A (en) * | 2020-01-07 | 2020-05-15 | 华霆（合肥）动力技术有限公司 | Battery performance testing method, device and system |
| CN112362909A (en) * | 2020-10-29 | 2021-02-12 | 清华大学 | Pressure sensing method for projecting AFM probe on surface of nanowire in scanning electron microscope |
-
2004
- 2004-09-30 CN CN 200410050540 patent/CN1755345A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106796246A (en) * | 2014-02-24 | 2017-05-31 | 布鲁克纳米公司 | Accurate probe deployment in automatic scanning probe microscopic system |
| CN108489414A (en) * | 2018-05-07 | 2018-09-04 | 中国矿业大学 | A kind of micro/nano-scale memorial alloy round trip memory strain test device and test method |
| CN111157903A (en) * | 2020-01-07 | 2020-05-15 | 华霆（合肥）动力技术有限公司 | Battery performance testing method, device and system |
| CN112362909A (en) * | 2020-10-29 | 2021-02-12 | 清华大学 | Pressure sensing method for projecting AFM probe on surface of nanowire in scanning electron microscope |
| CN112362909B (en) * | 2020-10-29 | 2021-07-27 | 清华大学 | Pressure sensing method for projecting AFM probe on surface of nanowire in scanning electron microscope |
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