CN1744305A - 具改善散热的半导体装置 - Google Patents

具改善散热的半导体装置 Download PDF

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CN1744305A
CN1744305A CNA2005100980015A CN200510098001A CN1744305A CN 1744305 A CN1744305 A CN 1744305A CN A2005100980015 A CNA2005100980015 A CN A2005100980015A CN 200510098001 A CN200510098001 A CN 200510098001A CN 1744305 A CN1744305 A CN 1744305A
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U·科斯伯格
M·莫塞
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Infineon Technologies AG
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Abstract

本发明提供一种半导体装置,特别是一种具至少一个半导体印刷电路模块板的半导体模块,其提供更佳的散热效应,且能更有效地将热自所述半导体芯片(如存储芯片或逻辑芯片)驱散至所述印刷电路模块板。在本发明中,所述半导体芯片及所述印刷电路模块板间具一热传导材料中间层,所述中间层将由所述半导体芯片所产生的热驱散至所述印刷电路模块板。因此,所述半导体芯片在操作期间所产生的热可更有效地驱散至所述印刷电路模块板,其增进了所述半导体芯片的冷却效果并因而降低操作温度。自所述半导体芯片的更有效散热降低所述芯片的操作温度,并因而分别改善所述存储芯片的持留时间或是所述逻辑芯片的性能。

Description

具改善散热的半导体装置
技术领域
本发明系关于一种半导体装置,特别是分别具改善散热的一或复数个半导体芯片,如存储芯片或逻辑芯片的半导体印刷电路模块板。
背景技术
在半导体逻辑芯片,集成电路系在制造方法期间由数个加工步骤排列,这些逻辑芯片能够执行逻辑功能,亦即依据预定操作,特别是依据特定程序,处理数据。半导体存储芯片如RAM(随机存取存储器)半导体存储芯片,包括许多存储单元,其每一个具一个与一般称的选择晶体管连接的电容器。由在适当选择晶体管特定施用电压,可能在写入方法期间以一种控制方式储存电荷做为资料单元(位)于电容器中,此资料内容在读出方法期间可经由选择晶体管再次取回。
RAM存储装置为一种具选择存取的存储器,亦即数据可在特定地址储存及稍后在此地址再次读出。因为意欲容纳尽可能多的存储单元于一个RAM存储装置,我们已试着尽可能简单的及于最小可能的空间实现存储单元。
在SRAM(静态随机存取存储器)存储装置的情况下,所述个别存储单元包括少数,例如6个晶体管。相反的,一般称的DRAM(动态随机存取存储器)存储装置的存储单元一般包括仅一个单一,相应地控制的电容组件,如沟渠电容器,使用其电容,一个位每一个可储存为电荷,然而,此电荷仅在DRAM保留短时间,所以,必须定期如约每64个月执行一般称的”更新”,于此资料内容必须再次写入所述存储单元,与之相反,在SRAMs的情况下不需执行”更新”,因为只要适当供应电压馈入所述SRAM,则储存于所述存储单元的数据维持是储存的。然而,在非易失性存储装置(NVMs),如EPROMs、EEPROMs、及快闪存储器的情况下,即使当切断所述供应电压时,所储存数据仍维持是储存的。
然而,在非易失性存储装置的实际系统中,所储存电荷不会长时间保留在电容器中,其会产生资料的遗失。因为现代存储装置的比例扩充,一方面,资料遗失的原因系基于基本物理作用如电荷载体的散射、在缺陷位置的重新组合、及交互作用效应。另一方面,资料遗失亦因在存储装置的制造或加工期间所产生的一般称的泄漏路径而引起,如于不同材料之间的接口的不饱和键及因为方法波动的不同结构尺寸。
在二者情况,这些泄漏路径造成储存于所述电容器的资料必须在遗失前及时更新。在此期间的时间距,足够多的电荷载体保留在电容器使得它们可以与写入时的相同资料读出,此时间距称为”持留时间”。根据所述经验,所述持留时间在特定范围内随芯片温度指数地下降。
在半导体装置操作期间,超过100℃的温度有时因为在其中流动的电流而产生。因为增加的存储密度及更高的时钟频率,所述半导体装置及所述半导体模块的操作温度自动地增加,此使得有效冷却更为重要。即使在高温下(多至约120℃)为确保最长可能持留,所述芯片的有效冷却为需要的,所述半导体芯片的冷却可由改善热流出支持。
已存在已知的半导体模块,特别是来自服务器应用,于此配备半导体芯片的印刷电路模块板由经由水循环的活性冷却而冷却。此方法的缺点在于此种经由水循环的活性冷却系相关于大结构成果,此因成本原因不为经济的,特别是对PCs(个人计算机)的应用。
在其它系统中,如个人计算机及膝上型计算机,在所述半导体芯片所产生的热藉由对流由通风机额外自所述半导体芯片驱散。因为相对于通风机的位置,此处所述缺点为并非所有所述半导体印刷电路模块板可由空气相等地流经及因而未相等地冷却,所述热传导系经由在所述半导体芯片及所述半导体芯片排列于其上的所述印刷电路板之间的焊锡接点执行。
所以本发明目的为提供一种半导体装置,特别是一种提供自所述半导体芯片,如存储芯片或逻辑芯片,至所述印刷电路模块板的改善散热或更有效热传送之半导体印刷电路模块板。
发明内容
根据本发明,改善散热的目的可由具于权利要求第1项所示特征的半导体装置所解决,本发明有利具体实施例系定义于子权利要求。
改善散热的目的系根据本发明由半导体装置,特别是具印刷电路模块板,所解决,于印刷电路模块板上提供至少一个半导体芯片,如存储芯片及/或逻辑芯片,其中热传导材料的中间层系提供于所述半导体芯片及所述印刷电路模块板之间,所述中间层将由所述半导体芯片所产生的热驱散至所述印刷电路模块板。
此方式,在操作期间于所述半导体芯片所产生的热更佳地驱散至所述印刷电路模块板,其改善所述半导体芯片的冷却及因而减少它们的操作温度。因为在操作期间如此减少的所述半导体芯片操作温度,确保储存于所述存储单元的资料之更可靠持留。
本发明的基本观念在于在所述印刷电路模块板与排列于其上的所述半导体芯片之间的空间系以热传导材料在所述芯片及所述印刷电路模块板之间填充。一般,所述芯片以封装组件模制,使得,根据本发明,在所述半导体芯片封装组件底侧及所述印刷电路模块板表面之间的空间尽可能完全以热传导材料填充。在迄今已知的半导体装置之情况,此空间仅以具仅些微热传导的空气填充,以热传导材料填充所述空间于是产生自所述半导体芯片(存储芯片或逻辑芯片,分别)封装组件至所述印刷电路模块板表面(其用做散热器)的更高热传导。分别自所述存储芯片或逻辑芯片的更有效散热降低芯片的操作温度及因而分别改善所述存储芯片的持留时间或是所述逻辑芯片的性能。藉由降低操作温度,欧姆电阻额外减少,其减少在所述半导体芯片的驱散损失。
在本发明较佳具体实施例,所述热传导材料为电绝缘的及较佳为分别由硅酸盐或硅酮或Kapton组成。硅酸盐具拥有电绝缘作用的性质及具高热传导。在所述印刷电路模块板及所述半导体芯片之间的空间之所述热传导材料的电绝缘性质防止芯片端口之间的电短路。
为连接所述芯片至所述印刷电路模块板,金属焊锡接点有利地提供,经由此热亦分别自所述存储芯片或是所述逻辑芯片,经由热传导材料的中间层,驱散至所述印刷电路模块板。因为它们的金属材料,所述焊锡接点的确已具良好热传导性质,但此系依据所述电端口至所述芯片及它们的焊锡接点之截面积而定。
在本发明进一步较佳具体实施例中,所述芯片电端口至所述印刷电路模块板包括焊锡接点,由此使所述芯片电端口至所述印刷电路模块板的截面积为尽可能大,此基本上改善上述热传送。所述焊锡接点的截面区段系选择使得在电端口之间的安全距离被维持以避免电短路或干扰影响。藉由此,除了经由热传导材料的中间层之热传导,所述热亦尽可能有效地经由所述焊锡接点驱散至所述印刷电路模块板。
如此,有效热驱散系由自所述半导体芯片至所述印刷电路模块板(其本身用做散热器)的热传导执行,于此所述印刷电路模块板藉由对流经由其表面将热散至外界空气。因为在操作期间如此减少的所述半导体装置温度,确保储存于所述存储单元的数据之更可靠持留及逻辑芯片的更高性能。
所述芯片电端口较佳为延伸穿过所述中间层及因而由热传导材料围绕,为最适化经由所述芯片电端口自所述芯片至所述印刷电路模块板的热驱散,所述金属焊锡接点较佳为具至热传导材料的中间层之尽可能大的接触面。特别有利的是若所述芯片的金属焊锡接点由所述热传导材料的中间层尽可能完全地围绕及接触。
在本发明进一步较佳具体实施例中,所述印刷电路模块板本身亦基本上由良好热传导的材料组成,使得热以高热流自所述半导体芯片经由所述印刷电路模块板表面至外界散热,此热流可由增加所述印刷电路模块板表面而进一步改善,如藉由冷却排列于所述印刷电路模块板及较佳为金属的表面。额外或替代地,较佳金属冷却表面可以已知方式排列于芯片本身或是芯片封装组件。
本发明基本原则所以在于改善所述印刷电路模块板及排列于其上的存储或逻辑芯片之间的热传导接触以增加在操作期间由所述半导体芯片所产生的热之驱散至所述印刷电路模块板的较大表面。根据本发明,在芯片(存储芯片或逻辑芯片,分别)及所述印刷电路模块板之间的有效热接触系由在所述半导体芯片封装组件之间的空间的(电绝缘)填充材料作动,此系因为其非常良好的热传导性质。
本发明可特别应用于包括存储芯片或逻辑芯片的半导体模块,其产生要驱散的热。本发明特别合适用于半导体印刷电路模块板,于此数个存储芯片及/或逻辑芯片排列于所述印刷电路模块板。因此,本发明亦合适及精确地与具一或复数个上述形式的半导体装置的电子数据处理系统一起使用。
本发明较佳为可具SIMM模块(单同轴存储模块)应用的,及特别是具DIMM模块(双同轴存储模块)应用的,其每一个携带数个存储芯片。与SIMM模块相反,DIMM模块系不仅于一侧配备信号输入与输出及电压供应的端口,而是在所述印刷电路模块板两侧,放置于所述印刷电路模块板两侧的信号输入与输出及电压供应端口系与不同存储芯片连接。本发明所以特别适用于电子数据处理系统,其中系使用半导体装置,特别是具此处所述形式的半导体印刷电路模块板的半导体模块。
附图说明
在下文中,本发明藉由较佳具体实施例及所附图式详细解释。所述图式示出:
图1为根据先前技艺两个半导体芯片,如存储芯片或逻辑芯片,的底侧的示意表示;
图2为以已知方式排列于印刷电路板的两个半导体芯片,如存储芯片或逻辑芯片,的侧视图的示意表示;及
图3为根据本发明较佳具体实施例排列于印刷电路板的两个半导体芯片,如存储芯片或逻辑芯片,的侧视图的示意表示。
具体实施方式
图1显示根据先前技艺两个半导体芯片1,如存储芯片或逻辑芯片,的底侧的示意表示。在所述芯片1上,形成根据其做为存储芯片或逻辑芯片的功能特征化所述芯片1的集成电路。所述芯片1总是由封装组件2a及2b围绕,在一般称的成型或封装组件期间所述芯片1于制造期间成型为此型式。在图1的左侧,示意地说明TSOP封装组件2a(薄形小外廓封装组件)的底侧。在TSOP封装组件2a的情况下,在所述芯片1及其外围如印刷电路模块板之间的电接触系藉由自所述封装组件2a侧边突出及通常向下弯曲以将半导体芯片插入适当插头或是直接插在所述印刷电路模块板的焊端而建立。
在图1的右侧,示意地说明一般称的FBGA封装组件2b(小球格数组封装组件或密距式球格数组)的底侧。在FBGA封装组件2b的情况下,所述芯片1的电端口系经由所述封装组件2b内的内部电路与接触球4连接,所述接触球4系在所述FBGA封装组件2b的底侧以矩阵排列。在FBGA封装组件2b的情况下,在所述芯片1及其外围如印刷电路模块板之间的电接触系藉由在所形成接触矩阵(未示出)上的所述接触球4互补地焊接至所述接触球4的矩阵而建立。
图2显示以已知方式排列于印刷电路板6的两个半导体芯片2a及2b,如存储芯片或逻辑芯片,的侧视图的示意表示。所述印刷电路板6为如半导体模块的印刷电路模块板6,于其上排列着数个半导体芯片2a及2b,特别是存储芯片及/或逻辑芯片。所述半导体芯片2a及2b为上文所叙述及随TSOP封装组件2a及FBGA封装组件2b说明于图1的半导体芯片。在所有图式中,相同参考数字用于相同部件,使得下文图2叙述集中于所述半导体芯片2a及2b在所述印刷电路模块板6上的排列形式。
图2说明根据先前技艺半导体芯片2a及2b在所述印刷电路模块板6上的排列形式。半导体芯片2a及2b的每一个皆以其底侧置于所述印刷电路模块板6。在具TSOP封装组件2a的半导体芯片之情况,在所述芯片1及所述印刷电路模块板6之间的电接触系藉由自所述封装组件2a侧边突出与所述印刷电路模块板6焊接的焊端3而建立。在具FBGA封装组件2b的半导体芯片之情况,在所述芯片1及所述印刷电路模块板6之间的电接触系由在所述印刷电路模块板6上的接触矩阵焊接所述接触球4而建立。
当所述半导体芯片排列于印刷电路板,如上文所叙述封装组件形式,印刷电路板一般维持空气间隙于所述印刷电路模块板6的表面与所述封装组件2a及2b之间。在操作期间由电流于所述半导体芯片1所产生的热所以仅由热辐射或经由所述焊端3或所述接触球4分别散热至所述印刷电路模块板6。因为空气仅具非常些微热传导,在所述半导体芯片封装组件2a、2b与所述印刷电路模块板6的表面之间的空气间隙实际上不会产生对自所述半导体芯片2a、2b至所述印刷电路模块板6的散热之任何值得注意的贡献。因为在所述半导体芯片2a、2b及所述印刷电路模块板6之间的空气间隙为非常小,藉由对流的用于冷却的有效空气循环亦未提供。
图3显示根据本发明较佳具体实施例排列于印刷电路板6的两个半导体芯片2a及2b,如存储芯片或逻辑芯片,的侧视图的示意表示。在图3的排列大幅度地对应于说明于图2的排列,使得下文叙述集中于与图2叙述不同的特性。
如已关于图2于上文叙述,在具TSOP封装组件2a及其FBGA封装组件2b的半导体芯片之情况下,于封装组件底侧及所述印刷电路板表面之间存在空气间隙,其阻隔自所述半导体芯片2a及2b至所述印刷电路模块板6的热传导。如由图3所见,根据本发明,在所述半导体芯片2a、2b封装组件底侧及所述印刷电路模块板6表面之间的空间以具非常良好热传导的材料5填充。而且,在所述印刷电路模块板6及所述半导体芯片2a、2b之间的热传导材料5为电绝缘的以防止在所述芯片1端口之间的电短路。
当以热传导材料5填充于所述半导体芯片2a、2b封装组件底侧及所述印刷电路板6表面之间的间隙时,必须确保所述材料系在与所述半导体芯片2a、2b封装组件及与所述印刷电路模块板6的最佳可能热接触。藉由建立与个别表面的大面积接触之热传导材料,良好热流可在所述半导体芯片2a、2b及所述印刷电路板6之间产生,及于是可散热较仅经由所述半导体芯片2a、2b的金属焊接接点3、4所可能的为大量的热至外界。
根据本发明,由所述芯片所产生的热经由所述封装组件更有效率地散热至所述印刷电路模块板,及于是所述半导体芯片的操作温度降低,此使得储存于所述存储单元的资料持留时间的延长或更有效的持留,及所述逻辑芯片的更高性能可达到。因为较低操作温度,额外降低在芯片集成电路的欧姆电阻,此降低在所述半导体芯片的散热损失。
本发明未受限于两种上文所提及封装组件形式的应用,其仅用做本发明的示例解释。本发明亦可容易地应用其它封装组件形式,其中仍然保有在封装组件底侧及所述印刷电路板表面之间的间隙。
组件符号说明
1      具集成电路的芯片
2a     TSOP封装(薄形小外廓封装)
2b     FBGA封装(小球格数组封装)
3      焊端
4      接触球
5      热传导材料的中间层
6      印刷电路模块板

Claims (11)

1.一种具至少一个印刷电路模块板(6)的半导体装置,在所述印刷电路模块板上排列至少一个如存储芯片及/或逻辑芯片的半导体芯片(2a、2b),
其特征在于
所述半导体芯片(2a、2b)及所述印刷电路模块板(6)间具有一种热传导材料中间层(5),所述中间层(5)将分别由所述存储芯片或所述逻辑芯片(2a、2b)所产生的热驱散至所述印刷电路模块板(6)。
2.根据权利要求1的半导体装置,其中所述半导体芯片包括一封装组件(2a、2b),且在所述封装组件(2a、2b)与所述印刷电路模块板(6)表面间的空间中完全填充所述热传导材料(5)。
3.根据权利要求1或2的半导体装置,其中所述热传导材料(5)是电绝缘性及较佳为由硅酸盐组成。
4.根据上述权利要求中任一的半导体装置,其中在所述半导体芯片(2a、2b)与所述印刷电路模块板(6)间具有金属焊锡接点(3、4),以使热经由所述金属焊锡接点(3、4)而自所述半导体装置(2a、2b)通过所述中间层(5)而被驱散至所述印刷电路模块板(6)。
5.根据权利要求4的半导体装置,其中所述金属焊锡接点(3、4)包括一与所述热传导材料中间层(5)接触的接触面。
6.根据权利要求4或5的半导体装置,其中所述金属焊锡接点(3、4)完全由所述热传导材料中间层(5)围绕及接触。
7.根据上述权利要求中任一的半导体装置,其中所述金属焊锡接点(3、4)的截面积尽可能大。
8.根据上述权利要求中任一的半导体装置,其中所述印刷电路模块板(6)是由热传导材料组成并将热自所述半导体芯片(2a、2b)经由其表面驱散至外界。
9.根据上述权利要求中任一的半导体装置,其中所述印刷电路模块板(6)具有表面放大,特别是经由排列于所述印刷电路模块板(6)的冷却表面,较佳为金属冷却表面。
10.根据上述权利要求中任一的半导体装置,其中在所述印刷电路模块板(6)上排列了数个半导体装置(2a、2b),特别是存储芯片及/或逻辑芯片。
11.一种电子数据处理系统,其包括至少一个根据权利要求1至10中任一的半导体装置。
CNA2005100980015A 2004-09-02 2005-09-01 具改善散热的半导体装置 Pending CN1744305A (zh)

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