CN1731256A - Pixel structure - Google Patents
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- CN1731256A CN1731256A CN 200510092063 CN200510092063A CN1731256A CN 1731256 A CN1731256 A CN 1731256A CN 200510092063 CN200510092063 CN 200510092063 CN 200510092063 A CN200510092063 A CN 200510092063A CN 1731256 A CN1731256 A CN 1731256A
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- 239000003990 capacitor Substances 0.000 claims abstract description 35
- 239000010409 thin film Substances 0.000 claims description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 52
- 230000005540 biological transmission Effects 0.000 description 21
- 238000010586 diagram Methods 0.000 description 12
- 239000000758 substrate Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Abstract
The invention relates to a semi-penetrating semi-reflecting element structure, which comprises a source unit, a charging capacitor, a transparent electrode and a first reflecting electrode. The charging capacitor comprises a lower electrode, a floating electrode and an upper electrode. The upper electrode is positioned on the upper part of the lower electrode and the floating electrode and is electric connected with the source unit. The transparent electrode is electric connected with the upper electrode. The first reflecting electrode is electric connected with the floating electrode and electric isolated with the transparent electrode.
Description
Technical field
The present invention relates to a kind of dot structure, particularly relate to a kind of transflective pixel structure.
Background technology
At improving rapidly of multimedia society, be indebted to the tremendous progress of semiconductor subassembly or man-machine display device mostly.With regard to display, (cathode ray tube CRT) because of having excellent display quality and its economy, monopolizes monitor market in recent years to cathode-ray tube (CRT) always.Yet, operate the environment of most terminating machine/display equipments on the table for the individual, or with the incision of the viewpoint of environmental protection, if predicted with the trend of saving the energy, cathode-ray tube (CRT) is because of still existing a lot of problems in space utilization and the energy resource consumption, and can't effectively provide solution for the demand of light, thin, short, little and low power consumption power.Therefore, the Thin Film Transistor-LCD (TFT-LCD) with advantageous characteristic such as high image quality, space utilization efficient are good, low power consumption power, low radiation becomes the main flow in market gradually.
General LCD can be divided into penetration, reflective, and the semi-penetration, semi-reflective three major types, and its The classification basis is the utilization of light source and the difference of array base palte (array).Wherein, penetrating LCD mainly be with backlight (back light) as light source, the pixel electrode on its array base palte is that transparency electrode penetrates in order to backlight; Reflective liquid-crystal display mainly is as light source with front light-source (front light) or external light source, pixel electrode on its array base palte is that metal or other have the reflecting electrode of good reflection characteristic material, is suitable for front light-source or external light source reflection; And semi-penetrated semi-reflected liquid crystal display can utilize backlight and external light source to show simultaneously, pixel on it can be divided into transmission area and echo area, have transparency electrode on the transmission area and penetrate, and have the reflecting electrode that is suitable for the external light source reflection on the echo area in order to backlight.
Fig. 1 shows the structural drawing of the liquid crystal display of existing a kind of pair of unit interval formula (dual cell gap).Please refer to Fig. 1, liquid crystal display 100 has two zones, be respectively transmission area T and echo area R, and comprise one first substrate 110, a thin film transistor (TFT) 120, a dielectric layer 130, a transparency electrode 140, a reflecting electrode 150, a liquid crystal layer 160, a sept 170, a colored filter film 180 and one second substrate 190.
Wherein, thin film transistor (TFT) 120 is disposed on first substrate 110; Dielectric layer 130 is disposed on the thin film transistor (TFT) 120 and first substrate 110; Transparency electrode 140 all is disposed on the dielectric layer 130 with reflecting electrode 150, and lays respectively among transmission area T and the echo area R; Colored filter film 180 is disposed under second substrate 190; Liquid crystal layer 160 is disposed between transparency electrode 140, reflecting electrode 150 and the colored filter film 180; 170 of septs are disposed on transparency electrode 140 or the reflecting electrode 150, in order to keep fixing unit interval.
It should be noted that the unit interval of transmission area T is about the twice of the unit interval of echo area R.Light echo area R enter liquid crystal display 100 to reflect liquid crystal display 100 during in, the distance of its liquid crystal layer of passing through 160 can be same as light transmission area T pass liquid crystal display 100 during the distance of the liquid crystal layer of passing through 160, so the transmissivity of the transmissivity of echo area R and transmission area T is much at one.
Fig. 2 shows the transmissivity analogous diagram of the liquid crystal display of the two unit interval formulas of this kind.Please refer to Fig. 2, under different impressed voltage conditions, the transmissivity of echo area R and transmission area T much at one as seen from Figure 2.In other words, the display quality of two unit interval formula half-penetration half-reflection liquid crystal display panels is preferable.Yet, because the unit interval of transmission area T is different with the unit interval of echo area R, so the difference in height of transparency electrode 140 and the intersection of reflecting electrode 150 will cause the LCD alignment of regional area inconsistent or cause electric field inhomogeneous, and then cause the problem of two unit interval formula half-penetration half-reflection liquid crystal display panel light leaks.In addition, transparency electrode 140 can cause the aperture opening ratio (aperture ratio) of two unit interval formula half-penetration half-reflection liquid crystal display panels to reduce with the intersection of reflecting electrode 150.
Fig. 3 shows the structural drawing of the liquid crystal display of existing a kind of only first space type (single cell gap).Please refer to Fig. 3, liquid crystal display 200 is similar with liquid crystal display 100, and difference is: in liquid crystal display 200, the unit interval of transmission area T is identical with the unit interval of echo area R.Owing to do not have difference in height between transparency electrode 240 and the reflecting electrode 250, though only first space type half-penetration half-reflection liquid crystal display panel can not produce the problem that light leak or aperture opening ratio reduce, but under same driving voltage, because the transmissivity of echo area R is different with the transmissivity of transmission area T, the display quality of only first space type half-penetration half-reflection liquid crystal display panel is not good with causing.
Fig. 4 shows the only transmissivity analogous diagram of the liquid crystal display of first space type of this kind.Please refer to Fig. 4, under identical impressed voltage condition, the transmissivity of echo area R and transmission area T differs a lot of as seen from Figure 4.By Fig. 3 and Fig. 4 as can be known, this kind only first space type liquid crystal display and can't fully take into account the transmissivity of echo area R and the transmissivity of transmission area T.
Summary of the invention
In view of this, the purpose of this invention is to provide a kind of transflective pixel structure that can improve display quality.
Based on above-mentioned purpose or other purpose, the present invention proposes a kind of transflective pixel structure, comprises an active device, a reservior capacitor, a transparency electrode and one first reflecting electrode.Wherein, reservior capacitor comprises a bottom electrode, a floating electrode and a top electrode.Top electrode is disposed at bottom electrode and floating electrode top, and electrically connects with active device.Transparency electrode and top electrode electrically connect.First reflecting electrode and floating electrode electrically connect, and are electrically insulated with transparency electrode.
According to the described transflective pixel structure of preferred embodiment of the present invention, wherein active device for example comprises thin film transistor (TFT).
According to the described transflective pixel structure of preferred embodiment of the present invention, wherein the transparency electrode and first reflecting electrode are for example in the same plane.
According to the described transflective pixel structure of preferred embodiment of the present invention, wherein first reflecting electrode for example is disposed at the reservior capacitor top.
According to the described transflective pixel structure of preferred embodiment of the present invention, for example comprise also that one shares distribution, be disposed between the transparency electrode and first reflecting electrode.
According to the described transflective pixel structure of preferred embodiment of the present invention, wherein bottom electrode is connected with shared wired electric.
According to the described transflective pixel structure of preferred embodiment of the present invention, wherein top electrode is to extend to the shared wiring top by first reflecting electrode below.
According to the described transflective pixel structure of preferred embodiment of the present invention, for example also comprise one first dielectric layer, one second dielectric layer and a flatness layer.First dielectric layer is disposed at transparency electrode and first reflecting electrode below, to cover bottom electrode and floating electrode.Second dielectric layer is disposed on first dielectric layer, to cover top electrode.Flatness layer is disposed on second dielectric layer, and wherein first dielectric layer, second dielectric layer and flatness layer have one first contact hole, and transparency electrode and first reflecting electrode electrically connect with top electrode and floating electrode respectively by first contact hole.
According to the described transflective pixel structure of preferred embodiment of the present invention, for example also comprise one second reflecting electrode, electrically connect with top electrode.
According to the described transflective pixel structure of preferred embodiment of the present invention, for example also comprise one first dielectric layer, one second dielectric layer and a flatness layer.First dielectric layer is disposed at transparency electrode, first reflecting electrode and second reflecting electrode below, to cover bottom electrode and floating electrode.Second dielectric layer is disposed on first dielectric layer, to cover top electrode.Flatness layer is disposed on second dielectric layer, wherein first dielectric layer, second dielectric layer and flatness layer have one first contact hole and one second contact hole, the transparency electrode and first reflecting electrode electrically connect with top electrode and floating electrode respectively by first contact hole, and second reflecting electrode electrically connects by second contact hole and top electrode.
According to the transflective pixel structure that preferred embodiment of the present invention is stated, wherein the area ratio of second reflecting electrode and first reflecting electrode is for example between 0.05 to 0.4.
Transflective pixel structure of the present invention is by the size of the overlapping area of adjusting top electrode and floating electrode, make the transmissivity of the transmissivity of echo area and transmission area close, therefore can improve the display quality of only first space type half-penetration half-reflection liquid crystal display panel.
For above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and be described with reference to the accompanying drawings as follows.
Description of drawings
Fig. 1 shows the structural drawing of the liquid crystal display of a kind of pair of unit interval formula.
Fig. 2 shows the transmissivity analogous diagram of the liquid crystal display of a kind of pair of unit interval formula.
Fig. 3 shows a kind of structural drawing of liquid crystal display of only first space type.
Fig. 4 shows a kind of transmissivity analogous diagram of liquid crystal display of only first space type.
Fig. 5 A shows the structural representation of the transflective pixel structure of first embodiment of the invention.
Fig. 5 B, 5C show the sectional view of the transflective pixel structure of Fig. 5 A along A-A ', B-B ' profile line respectively.
Fig. 5 D shows the sectional view of the formed liquid crystal display of transflective pixel structure of Fig. 5 A along C-C ' profile line.
Fig. 5 E shows the equivalent circuit diagram of the liquid crystal display that the transflective pixel structure of first embodiment of the invention constituted.
Fig. 5 F shows the transmissivity analogous diagram of the liquid crystal display that the transflective pixel structure with first embodiment of the invention constituted.
Fig. 6 A shows the structural representation of the transflective pixel structure of second embodiment of the invention.
Fig. 6 B, 6C show the sectional view of the transflective pixel structure of Fig. 6 A along A-A ', B-B ' profile line respectively.
Fig. 6 D shows the sectional view of the formed liquid crystal display of transflective pixel structure of Fig. 6 A along C-C ' profile line.
Fig. 6 E shows the equivalent circuit diagram of the liquid crystal display that the transflective pixel structure of second embodiment of the invention constituted.
Fig. 6 F shows the transmissivity analogous diagram of the liquid crystal display that the transflective pixel structure with second embodiment of the invention constituted.
The reference numeral explanation
100,200,400,600: liquid crystal display
110,190,210,290: substrate
120,220: thin film transistor (TFT)
130,230,360,370,460,470: dielectric layer
140,240,330,430: transparency electrode
150,250,340,540a, 540b: reflecting electrode
160,260,410,610: liquid crystal layer
170,270: sept
180,280,430,630: colored filter film
300,500: the transflective pixel structure
310,510: active device
320,520: storage capacitors
322,522: bottom electrode
324,524: floating electrode
326,526: top electrode
350,550: shared wiring
380,580: flatness layer
390,590a, 590b: contact hole
420,620: shared electrode
T: transmission area
R: echo area
Embodiment
First embodiment
Fig. 5 A shows the structural representation of the transflective pixel structure of first embodiment of the invention, figure wherein (a) is the vertical view of transflective pixel structure, figure (b) is the vertical view of following one deck structure of figure (a), and figure (c) is the vertical view of following one deck structure of figure (b).In addition, Fig. 5 B, 5C show the sectional view of the transflective pixel structure of Fig. 5 A along A-A ', B-B ' profile line respectively.Please be simultaneously with reference to Fig. 5 A to 5C.The transflective pixel structure 300 of first embodiment of the invention is positioned on one first substrate 110, it has two zones, be respectively transmission area T and echo area R, and comprise an active device 310, a reservior capacitor 320, a transparency electrode 330 and one first reflecting electrode 340.Reservior capacitor 320 comprises a bottom electrode 322, a floating electrode 324 and top electrode 326 again.
In addition, one shares distribution 350 is disposed between the transparency electrode 330 and first reflecting electrode 340, and electrically connects with bottom electrode 322.326 of top electrodes extend to shared wiring 350 tops by first reflecting electrode, 340 belows.
Generally speaking, dispose dielectric layer in the capacitor usually.In the transflective pixel structure 300 of present embodiment, the intermediate configurations of reservior capacitor 320 has one first dielectric layer 360.This first dielectric layer 360 is disposed at transparency electrode 330 and first reflecting electrode, 340 belows, to cover bottom electrode 322 and floating electrode 324.Then dispose one second dielectric layer 370 and a flatness layer 380 in the capacitor that first reflecting electrode 340 and top electrode 326 are constituted.This second dielectric layer 370 is disposed on first dielectric layer 360, and to cover top electrode 326, flatness layer 380 is disposed on second dielectric layer 370, so that first reflecting electrode 340 is positioned at same plane with transparency electrode 330.First dielectric layer 360, second dielectric layer 370, flatness layer 380 have first contact hole 390, and transparency electrode 330, first reflecting electrode 340 can be electrically connected with top electrode 326, floating electrode 324 respectively by first contact hole 390.
Because the configuration of flatness layer 380, make the reflecting electrode 340 of winning be positioned at same plane with transparency electrode 330, therefore the transflective pixel structure 300 of present embodiment does not have the inconsistent or uneven problem of electric field of LCD alignment of regional area, therefore can improve the phenomenon that only first space type partly penetrates half-reflection liquid crystal face display panel generation light leak.
Fig. 5 D shows the sectional view of the formed liquid crystal display of transflective pixel structure of Fig. 5 A along C-C ' profile line.Please refer to Fig. 5 D, this liquid crystal display 400 comprises a semi-penetration semi-reflective dot structure 300, a liquid crystal layer 410, one shared electrode 420, a colored filter film 430 and one second substrate 190.Wherein liquid crystal layer 410 is disposed between transflective pixel structure 300 and the shared electrode 420, and shared electrode 420 is disposed under the colored filter film 430, and 430 of colored filter film are disposed under second substrate 190.
Fig. 5 E shows the equivalent circuit diagram of the liquid crystal display that the transflective pixel structure of first embodiment of the invention constituted.Please be simultaneously with reference to Fig. 5 D and Fig. 5 E, the capacitor C among the top electrode 326 in Fig. 5 D (or transparency electrode 330), the bottom electrode 322 difference pie graph 5E
St (T)The first battery lead plate (C among Fig. 5 E
St (T)The battery lead plate of below), the second battery lead plate (C among Fig. 5 E
St (T)The battery lead plate of top); Capacitor C among transparency electrode 330 among Fig. 5 D (or top electrode 326), the shared electrode 420 difference pie graph 5E
Lc (T)The first battery lead plate (C among Fig. 5 E
Lc (T)The battery lead plate of below), the second battery lead plate (C among Fig. 5 E
Lc (T)The battery lead plate of top); Capacitor C among top electrode 326 among Fig. 5 D, first reflecting electrode 340 (or floating electrode 324) the difference pie graph 5E
St (R)The first battery lead plate (C among Fig. 5 E
St (R)The battery lead plate of below), the second battery lead plate (C among Fig. 5 E
St (R)The battery lead plate of top); Capacitor C among first reflecting electrode 340 (or floating electrode 324) among Fig. 5 D, the shared electrode 420 difference pie graph 5E
Lc (R)The first battery lead plate (C among Fig. 5 E
Lc (R)The battery lead plate of below), the second battery lead plate (C among Fig. 5 E
Lc (R)The battery lead plate of top).
Please continue continuously with reference to Fig. 5 E, when active device 310 is in opening, an impressed voltage Va can put on top electrode 326, so that capacitor C
St (T)First battery lead plate (being top electrode 326 or transparency electrode 330), capacitor C
Lc (T)First battery lead plate (being transparency electrode 330) and capacitor C
St (R)The voltage of first battery lead plate (being top electrode 326) be all Va.Because capacitor C
St (R)With capacitor C
Lc (R)Polyphone, so voltage difference (Va-Vcom) need be allocated in this two capacitor C
St (R), C
Lc (R)So, capacitor C
Lc (R)The magnitude of voltage Vf of first battery lead plate (being the floating electrode 324 or first reflecting electrode 340) will be different from impressed voltage Va.If change the size of the overlapping area of top electrode 326 and floating electrode 324, can adjust C
St (R)Value, that is capacitor C
Lc (R)The magnitude of voltage Vf of first battery lead plate (being the floating electrode 324 or first reflecting electrode 340) therefore also can be adjusted.As mentioned above, by changing magnitude of voltage Vf, can make the transmissivity of the transmissivity of echo area R near transmission area T.Fig. 5 F shows the transmissivity analogous diagram of the liquid crystal display that the transflective pixel structure with first embodiment of the invention constituted.Please refer to Fig. 5 F, from Fig. 5 F, under identical impressed voltage condition, the transmissivity of the transmissivity of echo area R and transmission area T is close as can be seen.Therefore the display quality of the only first space type half-penetration half-reflection liquid crystal display panel that is constituted with transflective pixel structure 300 of the present invention is preferable.
Second embodiment
Fig. 6 A shows the structural representation of the transflective pixel structure of second embodiment of the invention, figure wherein (a) is the vertical view of transflective pixel structure, figure (b) is the vertical view of following one deck structure of figure (a), and figure (c) is the vertical view of following one deck structure of figure (b).In addition, Fig. 6 B, 6C show the sectional view of the transflective pixel structure of Fig. 6 A along A-A ', B-B ' profile line respectively.Please also refer to Fig. 6 A to 6C.The transflective pixel structure 500 of present embodiment is similar to the transflective pixel structure 300 of first embodiment, difference is: transflective pixel structure 500 comprises one second reflecting electrode 540b, itself and top electrode 526 electrically connect, are electrically insulated with the first reflecting electrode 540a, and the area ratio of the second reflecting electrode 540b and the first reflecting electrode 540a is for example between 0.05 to 0.4.
In the transflective pixel structure 500 of present embodiment, the intermediate configurations of reservior capacitor 520 has one first dielectric layer 560, this first dielectric layer 560 is disposed at transparency electrode 530, the first reflecting electrode 540a and second reflecting electrode 540b below, to cover bottom electrode 522 and floating electrode 524.Then dispose one second dielectric layer 570 and a flatness layer 580 in the middle of the capacitor that the first reflecting electrode 540a, the second reflecting electrode 540b and top electrode 526 are constituted, this second dielectric layer 570 is disposed on first dielectric layer 560, to cover top electrode 526, flatness layer 580 is disposed on second dielectric layer 570, so that the first reflecting electrode 540a, the second reflecting electrode 540b and transparency electrode 530 are positioned at same plane.First dielectric layer 560, second dielectric layer 570, flatness layer 580 have the one the first contact hole 590a and the one second contact hole 590b, transparency electrode 530, the first reflecting electrode 540a are electrically connected with top electrode 526, floating electrode 524 by the first contact 590a is out of the ordinary, and the second reflecting electrode 540b can be by the second contact 590b and top electrode 526 electric connections.
Fig. 6 D shows the sectional view of the formed liquid crystal display of transflective pixel structure of Fig. 6 A along C-C ' profile line.Please refer to Fig. 6 D, this liquid crystal display 600 is similar to the described liquid crystal display 400 of first embodiment.Fig. 6 E shows the equivalent circuit diagram of the liquid crystal display that the transflective pixel structure of second embodiment of the invention constituted.Please also refer to Fig. 6 D and Fig. 6 E, the capacitor C among the top electrode 526 in Fig. 6 D (or transparency electrode 530), the bottom electrode 522 difference pie graph 6E
St (T)First battery lead plate, second battery lead plate; Capacitor C among transparency electrode 530 among Fig. 6 D (or top electrode 526), the shared electrode 620 difference pie graph 6E
Lc (T)First battery lead plate, second battery lead plate; Capacitor C among top electrode 526 among Fig. 6 D, the first reflecting electrode 540a (or floating electrode 524) the difference pie graph 5E
St (R)First battery lead plate, second battery lead plate; Capacitor C among the first reflecting electrode 540a (or floating electrode 524) among Fig. 6 D, the shared electrode 620 difference pie graph 6E
Lc (R)First battery lead plate, second battery lead plate; Capacitor C ' among bottom electrode 522 among Fig. 6 D, the second reflecting electrode 540b (or top electrode 526) the difference pie graph 5E
St (R)First battery lead plate, second battery lead plate.
With first embodiment in the same manner, if change the size of top electrode 526 and the overlapping area of floating electrode 524, can adjust C
St (R)Value, capacitor C
Lc (R)The magnitude of voltage Vf of first battery lead plate (being the floating electrode 524 or the first reflecting electrode 540a) therefore also can be adjusted.By changing magnitude of voltage Vf, can make the transmissivity of the transmissivity of echo area R near transmission area T.In addition, because the configuration of the second reflecting electrode 540b, the transmissivity that can make echo area R is more near the transmissivity of transmission area T.Fig. 6 F shows the transmissivity analogous diagram of the liquid crystal display that the transflective pixel structure with second embodiment of the invention constituted.Please refer to Fig. 6 F, from Fig. 6 F as can be seen, under identical impressed voltage condition, the transmissivity of the transmissivity of echo area R and photic zone T is more close.Therefore the display quality of only first space type half-penetration half-reflection liquid crystal display panel made from the transflective pixel of second embodiment of the invention is better.
In sum, transflective pixel structure of the present invention has the following advantages at least:
One, first reflecting electrode, second reflecting electrode and the transparency electrode of transflective pixel knot of the present invention are positioned at same plane, do not have the inconsistent or uneven problem of electric field of LCD alignment of regional area, can improve the phenomenon that only first space type partly penetrates half anti-liquid crystal face display panel generation light leak.
Two, transflective pixel structure of the present invention is by the size of the overlapping area of adjusting top electrode and floating electrode, make the transmissivity of the transmissivity of echo area and transmission area close, can improve the display quality of only first space type half-penetration half-reflection liquid crystal display panel.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; those skilled in the art can do some changes and retouching under the premise without departing from the spirit and scope of the present invention, so protection scope of the present invention is as the criterion with the protection domain of claim of the present invention.
Claims (11)
1. transflective pixel structure comprises:
Active device;
Reservior capacitor comprises:
Bottom electrode;
Floating electrode;
Top electrode is disposed at this bottom electrode and this floating electrode top, and electrically connects with this active device;
Transparency electrode electrically connects with this top electrode; And
First reflecting electrode electrically connects with this floating electrode, and wherein this first reflecting electrode and this transparency electrode are electrically insulated.
2. transflective pixel structure as claimed in claim 1, wherein this active device comprises thin film transistor (TFT).
3. transflective pixel structure as claimed in claim 1, wherein this transparency electrode and this first reflecting electrode are in the same plane.
4. transflective pixel structure as claimed in claim 1, wherein this first reflecting electrode is disposed at this reservior capacitor top.
5. transflective pixel structure as claimed in claim 1 also comprises shared wiring, is disposed between this transparency electrode and this first reflecting electrode.
6. transflective pixel structure as claimed in claim 5, wherein this bottom electrode and this shared wiring electrically connect.
7. transflective pixel structure as claimed in claim 5, wherein this top electrode extends to this shared wiring top by this first reflecting electrode below.
8. transflective pixel structure as claimed in claim 1 also comprises:
First dielectric layer is disposed at this transparency electrode and this first reflecting electrode below, to cover this bottom electrode and this floating electrode;
Second dielectric layer is disposed on this first dielectric layer, to cover this top electrode; And
Flatness layer, be disposed on this second dielectric layer, wherein this first dielectric layer, this second dielectric layer and this flatness layer have first contact hole, and this transparency electrode and this first reflecting electrode electrically connect with this top electrode and this floating electrode respectively by this first contact hole.
9. transflective pixel structure as claimed in claim 1 also comprises second reflecting electrode, electrically connects with this top electrode.
10. transflective pixel structure as claimed in claim 9 also comprises:
First dielectric layer is disposed at this transparency electrode, this first reflecting electrode and this second reflecting electrode below, to cover this bottom electrode and this floating electrode;
Second dielectric layer is disposed on this first dielectric layer, to cover this top electrode; And
Flatness layer, be disposed on this second dielectric layer, wherein this first dielectric layer, this second dielectric layer and this flatness layer have first contact hole and second contact hole, this transparency electrode and this first reflecting electrode electrically connect with this top electrode and this floating electrode respectively by this first contact hole, and this second reflecting electrode electrically connects by this second contact hole and this top electrode.
11. transflective pixel structure as claimed in claim 9, wherein the area ratio of this second reflecting electrode and this first reflecting electrode is between 0.05 to 0.4.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2005100920635A CN100478766C (en) | 2005-08-16 | 2005-08-16 | Pixel structure |
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| CNB2005100920635A CN100478766C (en) | 2005-08-16 | 2005-08-16 | Pixel structure |
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| CN1731256A true CN1731256A (en) | 2006-02-08 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100462828C (en) * | 2007-11-09 | 2009-02-18 | 友达光电股份有限公司 | Active element array substrate, its pixel structure and its drive method |
| US7872713B2 (en) | 2007-10-17 | 2011-01-18 | Au Optronics Corporation | Pixel structure having particular patterned dielectric layer with micro-bumps |
| CN102254928A (en) * | 2011-05-17 | 2011-11-23 | 友达光电股份有限公司 | Pixel structure and electrical bridging structure |
| CN102253546A (en) * | 2007-11-13 | 2011-11-23 | 友达光电股份有限公司 | Pixel structure |
| CN102290023A (en) * | 2010-08-13 | 2011-12-21 | 友达光电股份有限公司 | Memory circuit, display device provided with pixel memory and driving method thereof |
| TWI408474B (en) * | 2009-04-24 | 2013-09-11 | Innolux Corp | Subpixel structure and liquid crystal display panel |
-
2005
- 2005-08-16 CN CNB2005100920635A patent/CN100478766C/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7872713B2 (en) | 2007-10-17 | 2011-01-18 | Au Optronics Corporation | Pixel structure having particular patterned dielectric layer with micro-bumps |
| CN100462828C (en) * | 2007-11-09 | 2009-02-18 | 友达光电股份有限公司 | Active element array substrate, its pixel structure and its drive method |
| CN102253546A (en) * | 2007-11-13 | 2011-11-23 | 友达光电股份有限公司 | Pixel structure |
| TWI408474B (en) * | 2009-04-24 | 2013-09-11 | Innolux Corp | Subpixel structure and liquid crystal display panel |
| CN102290023A (en) * | 2010-08-13 | 2011-12-21 | 友达光电股份有限公司 | Memory circuit, display device provided with pixel memory and driving method thereof |
| CN102290023B (en) * | 2010-08-13 | 2013-11-06 | 友达光电股份有限公司 | Memory circuit, display device provided with pixel memory and driving method thereof |
| CN102254928A (en) * | 2011-05-17 | 2011-11-23 | 友达光电股份有限公司 | Pixel structure and electrical bridging structure |
| CN102254928B (en) * | 2011-05-17 | 2014-08-13 | 友达光电股份有限公司 | Pixel structure and electrical bridging structure |
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| Publication number | Publication date |
|---|---|
| CN100478766C (en) | 2009-04-15 |
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